Статті в журналах з теми "Si and Ge nanostructures"
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Brunner, Karl. "Si/Ge nanostructures." Reports on Progress in Physics 65, no. 1 (December 19, 2001): 27–72. http://dx.doi.org/10.1088/0034-4885/65/1/202.
Повний текст джерелаZaumseil, Peter, Yuji Yamamoto, Markus Andreas Schubert, Thomas Schroeder, and Bernd Tillack. "Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate." Solid State Phenomena 205-206 (October 2013): 400–405. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.400.
Повний текст джерелаEgorov, V. A., G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov, N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov, and P. Werner. "Si/Ge nanostructures for optoelectronics applications." Physics of the Solid State 46, no. 1 (January 2004): 49–55. http://dx.doi.org/10.1134/1.1641919.
Повний текст джерелаStoica, T., and E. Sutter. "Ge dots embedded in SiO2obtained by oxidation of Si/Ge/Si nanostructures." Nanotechnology 17, no. 19 (September 11, 2006): 4912–16. http://dx.doi.org/10.1088/0957-4484/17/19/022.
Повний текст джерелаDouhan, Rahaf, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko, and Kristina Khomyakova. "Recent Advances in Si-Compatible Nanostructured Photodetectors." Technologies 11, no. 1 (January 24, 2023): 17. http://dx.doi.org/10.3390/technologies11010017.
Повний текст джерелаBarbagiovanni, E. G., D. J. Lockwood, P. J. Simpson, and L. V. Goncharova. "Quantum confinement in Si and Ge nanostructures." Journal of Applied Physics 111, no. 3 (February 2012): 034307. http://dx.doi.org/10.1063/1.3680884.
Повний текст джерелаMoutanabbir, O., S. Miyamoto, A. Fujimoto, and K. M. Itoh. "Isotopically controlled self-assembled Ge/Si nanostructures." Journal of Crystal Growth 301-302 (April 2007): 324–29. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.178.
Повний текст джерелаWang, Ye-Liang, Hai-Ming Guo, Zhi-Hui Qin, Hai-Feng Ma, and Hong-Jun Gao. "Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations." Journal of Nanomaterials 2008 (2008): 1–18. http://dx.doi.org/10.1155/2008/874213.
Повний текст джерелаTang, Y. S., C. M. Sotomayor Torres, T. E. Whall, E. H. C. Parker, H. Presting, and H. Kibbel. "Optical properties of Si-Si1−xGex and Si-Ge nanostructures." Journal of Materials Science: Materials in Electronics 6, no. 5 (October 1995): 356–62. http://dx.doi.org/10.1007/bf00125892.
Повний текст джерелаЛапин, Вячеслав Анатольевич, Александр Александрович Кравцов, Дмитрий Сергеевич Кулешов, and Федор Федорович Малявин. "INVESTIGATION OF POSSIBILITY OF THE MISFIT DISLOCATION DENSITY REDUCTION IN GE / SI FILMS WITH A BUFFER LAYER." Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials, no. 13 (December 23, 2021): 263–71. http://dx.doi.org/10.26456/pcascnn/2021.13.263.
Повний текст джерелаBaribeau, J.-M., X. Wu, N. L. Rowell, and D. J. Lockwood. "Ge dots and nanostructures grown epitaxially on Si." Journal of Physics: Condensed Matter 18, no. 8 (February 10, 2006): R139—R174. http://dx.doi.org/10.1088/0953-8984/18/8/r01.
Повний текст джерелаNikolenko, A. S. "Photoresponse in Ge/Si nanostructures with quantum dots." Semiconductor Physics, Quantum Electronics & Optoelectronics 9, no. 1 (March 1, 2006): 32–35. http://dx.doi.org/10.15407/spqeo9.01.032.
Повний текст джерелаDas, Suvankar, Amitava Moitra, Mishreyee Bhattacharya, and Amlan Dutta. "Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires." Beilstein Journal of Nanotechnology 6 (October 2, 2015): 1970–77. http://dx.doi.org/10.3762/bjnano.6.201.
Повний текст джерелаMckay, Michael R., John Shumway, and Jeff Drucker. "Real-time coarsening dynamics of Ge∕Si(100) nanostructures." Journal of Applied Physics 99, no. 9 (May 2006): 094305. http://dx.doi.org/10.1063/1.2191574.
Повний текст джерелаBrona, Jacek, Vasily Cherepanov, Konstantin Romanyuk, and Bert Voigtländer. "Formation of pits during growth of Si/Ge nanostructures." Surface Science 604, no. 3-4 (February 2010): 424–27. http://dx.doi.org/10.1016/j.susc.2009.12.006.
Повний текст джерелаIzhnin, I. I., O. I. Fitsych, A. V. Voitsekhovskii, A. P. Kokhanenko, K. A. Lozovoy, and V. V. Dirko. "Nanostructures with Ge–Si quantum dots for infrared photodetectors." Opto-Electronics Review 26, no. 3 (September 2018): 195–200. http://dx.doi.org/10.1016/j.opelre.2018.06.002.
Повний текст джерелаKamenev, B. V., E. K. Lee, H. Y. Chang, H. Han, H. Grebel, L. Tsybeskov, and T. I. Kamins. "Excitation-dependent photoluminescence in Ge∕Si Stranski-Krastanov nanostructures." Applied Physics Letters 89, no. 15 (October 9, 2006): 153106. http://dx.doi.org/10.1063/1.2361198.
Повний текст джерелаMontoro, Luciano A., Marina S. Leite, Daniel Biggemann, Fellipe G. Peternella, K. Joost Batenburg, Gilberto Medeiros-Ribeiro, and Antonio J. Ramirez. "Revealing Quantitative 3D Chemical Arrangement on Ge−Si Nanostructures." Journal of Physical Chemistry C 113, no. 21 (May 5, 2009): 9018–22. http://dx.doi.org/10.1021/jp902480w.
Повний текст джерелаAl-Salman, Rihab, Xiangdong Meng, Jiupeng Zhao, Yao Li, Ulrich Kynast, Marina M. Lezhnina, and Frank Endres. "Semiconductor nanostructures via electrodeposition from ionic liquids." Pure and Applied Chemistry 82, no. 8 (May 14, 2010): 1673–89. http://dx.doi.org/10.1351/pac-con-09-09-25.
Повний текст джерелаPodolian, A. O., V. V. Kuryliuk, A. B. Nadtochiy, S. V. Kondratenko, O. A. Korotchenkov, Yu N. Kozyrev, V. K. Sklyar, M. Yu Rubezhanska, and V. S. Lysenko. "Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers." Advanced Materials Research 276 (July 2011): 159–66. http://dx.doi.org/10.4028/www.scientific.net/amr.276.159.
Повний текст джерелаOku, Takeo, T. Hirata, N. Motegi, R. Hatakeyama, N. Sato, T. Mieno, N. Y. Sato, H. Mase, M. Niwano, and N. Miyamoto. "Formation of carbon nanostructures with Ge and SiC nanoparticles prepared by direct current and radio frequency hybrid arc discharge." Journal of Materials Research 15, no. 10 (October 2000): 2182–86. http://dx.doi.org/10.1557/jmr.2000.0314.
Повний текст джерелаAmato, Michele. "(Invited, Digital Presentation) Physical Properties of Silicon-Germanium Nanostructures: Theory and Simulations." ECS Meeting Abstracts MA2022-02, no. 20 (October 9, 2022): 907. http://dx.doi.org/10.1149/ma2022-0220907mtgabs.
Повний текст джерелаXin, Zheng Hang, Chong Wang, Feng Qiu, Rong Fei Wang, Chen Li, and Yu Yang. "Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography." Materials Science Forum 852 (April 2016): 283–92. http://dx.doi.org/10.4028/www.scientific.net/msf.852.283.
Повний текст джерелаTeichert, C., J. C. Bean, and M. G. Lagally. "Self-organized nanostructures in Si 1-x Ge x films on Si(001)." Applied Physics A: Materials Science & Processing 67, no. 6 (December 1, 1998): 675–85. http://dx.doi.org/10.1007/s003390050839.
Повний текст джерелаZandvliet, H. J. W. "Strain-Induced Nanostructuring on Si(001) and Ge(001) Surfaces." Modern Physics Letters B 11, no. 02n03 (January 30, 1997): 47–52. http://dx.doi.org/10.1142/s0217984997000074.
Повний текст джерелаDadykin, A. A., Yu N. Kozyrev, and A. G. Naumovets. "Field electron emission from Ge-Si nanostructures with quantum dots." Journal of Experimental and Theoretical Physics Letters 76, no. 7 (October 2002): 472–74. http://dx.doi.org/10.1134/1.1528705.
Повний текст джерелаBerashevich, Yu A., A. S. Panfilenok, and V. E. Borisenko. "Radiative recombination channels in Si/Si1 − x Ge x nanostructures." Semiconductors 42, no. 1 (January 2008): 67–73. http://dx.doi.org/10.1134/s1063782608010090.
Повний текст джерелаBarbagiovanni, Eric G., David J. Lockwood, Peter J. Simpson, and Lyudmila V. Goncharova. "Quantum confinement in Si and Ge nanostructures: Theory and experiment." Applied Physics Reviews 1, no. 1 (March 2014): 011302. http://dx.doi.org/10.1063/1.4835095.
Повний текст джерелаTaraci, J. L., T. Clement, J. W. Dailey, J. Drucker, and S. T. Picraux. "Ion beam analysis of VLS grown Ge nanostructures on Si." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 242, no. 1-2 (January 2006): 205–8. http://dx.doi.org/10.1016/j.nimb.2005.08.202.
Повний текст джерелаKolobov, A. V., H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S. Wei, K. Brunner, et al. "Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 199 (January 2003): 174–78. http://dx.doi.org/10.1016/s0168-583x(02)01556-2.
Повний текст джерелаVoigtländer, Bert, Midori Kawamura, Neelima Paul, and Vasily Cherepanov. "Formation of Si/Ge nanostructures at surfaces by self-organization." Journal of Physics: Condensed Matter 16, no. 17 (April 17, 2004): S1535—S1551. http://dx.doi.org/10.1088/0953-8984/16/17/006.
Повний текст джерелаCai, Qijia, Peixuan Chen, Zhenyang Zhong, Zuimin Jiang, Fang Lu, and Zhenghua An. "Circularly organized quantum dot nanostructures of Ge on Si substrates." Semiconductor Science and Technology 24, no. 9 (July 31, 2009): 095005. http://dx.doi.org/10.1088/0268-1242/24/9/095005.
Повний текст джерелаStavarache, Ionel, Valentin Adrian Maraloiu, Petronela Prepelita, and Gheorghe Iordache. "Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties." Beilstein Journal of Nanotechnology 7 (October 21, 2016): 1492–500. http://dx.doi.org/10.3762/bjnano.7.142.
Повний текст джерелаTsybeskov, Leonid, Boris V. Kamenev, Jean-Marc Baribeau, and David J. Lockwood. "Optical Properties of Composition-Controlled Three-Dimensional Si/Si $_{1 - x}$Ge$_{x}$ Nanostructures." IEEE Journal of Selected Topics in Quantum Electronics 12, no. 6 (November 2006): 1579–84. http://dx.doi.org/10.1109/jstqe.2006.884061.
Повний текст джерелаZaumseil, Peter, Markus Andreas Schubert, Yuji Yamamoto, Oliver Skibitzki, Giovanni Capellini, and Thomas Schroeder. "Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon." Solid State Phenomena 242 (October 2015): 402–7. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.402.
Повний текст джерелаSadofyev, Yu G., V. P. Martovitsky, A. V. Klekovkin, V. V. Saraikin, and I. S. Vasil’evskii. "Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers." Physics Procedia 72 (2015): 411–18. http://dx.doi.org/10.1016/j.phpro.2015.09.078.
Повний текст джерелаAlfaro, Pedro, Rodolfo Cisneros, Monserrat Bizarro, Miguel Cruz-Irisson, and Chumin Wang. "Raman scattering by confined optical phonons in Si and Ge nanostructures." Nanoscale 3, no. 3 (2011): 1246. http://dx.doi.org/10.1039/c0nr00623h.
Повний текст джерелаMoon, D. W., H. I. Lee, B. Cho, Y. L. Foo, T. Spila, S. Hong, and J. E. Greene. "Direct measurements of strain depth profiles in Ge/Si(001) nanostructures." Applied Physics Letters 83, no. 25 (December 22, 2003): 5298–300. http://dx.doi.org/10.1063/1.1635074.
Повний текст джерелаKwon, Soonshin, Matthew C. Wingert, Jianlin Zheng, Jie Xiang, and Renkun Chen. "Thermal transport in Si and Ge nanostructures in the ‘confinement’ regime." Nanoscale 8, no. 27 (2016): 13155–67. http://dx.doi.org/10.1039/c6nr03634a.
Повний текст джерелаCheng, M. H., W. X. Ni, G. L. Luo, S. C. Huang, J. J. Chang, and C. Y. Lee. "Growth and characterization of Ge nanostructures selectively grown on patterned Si." Thin Solid Films 517, no. 1 (November 2008): 57–61. http://dx.doi.org/10.1016/j.tsf.2008.08.149.
Повний текст джерелаSchmidt, O. G., K. Eberl, and J. Auerswald. "C-induced Ge dots: enhanced light-output from Si-based nanostructures." Journal of Luminescence 80, no. 1-4 (December 1998): 491–95. http://dx.doi.org/10.1016/s0022-2313(98)00161-6.
Повний текст джерелаKlyachkovskaya, Elena, Natalia Strekal, Inna Motevich, Svetlana Vaschenko, Anna Harbachova, Mikhail Belkov, Sergey Gaponenko, et al. "Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures." Plasmonics 6, no. 2 (March 4, 2011): 413–18. http://dx.doi.org/10.1007/s11468-011-9219-2.
Повний текст джерелаKamins, T. I., K. Nauka, and R. S. Williams. "Effect of self-assembled Ge nanostructures on Si surface electronic properties." Applied Physics A Materials Science & Processing 73, no. 1 (July 2001): 1–9. http://dx.doi.org/10.1007/s003390100782.
Повний текст джерелаManimuthu, Veerappan, Shoma Yoshida, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan, Yoshinari Kamakura, Yasuhiro Hayakawa, and Hiroya Ikeda. "Seebeck Coefficient of Ge-on-Insulator Layers Fabricated by Direct Wafer Bonding Process." Advanced Materials Research 1117 (July 2015): 94–97. http://dx.doi.org/10.4028/www.scientific.net/amr.1117.94.
Повний текст джерелаIchikawa, M. "Growth of Si and Ge nanostructures on Si substrates using ultrathin SiO/sub 2/ technology." IEEE Journal of Quantum Electronics 38, no. 8 (August 2002): 988–94. http://dx.doi.org/10.1109/jqe.2002.800972.
Повний текст джерелаBietti, Sergio, Lucia Cavigli, Marco Abbarchi, Anna Vinattieri, Massimo Gurioli, Alexey Fedorov, Stefano Cecchi, Fabio Isa, Giovanni Isella, and Stefano Sanguinetti. "High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates." physica status solidi (c) 9, no. 2 (November 17, 2011): 202–5. http://dx.doi.org/10.1002/pssc.201100273.
Повний текст джерелаBalasubramanian, Prabhu, Jerrold A. Floro, Jennifer L. Gray, and Robert Hull. "Nano-scale Chemistry of Complex Self-Assembled Nanostructures in Epitaxial SiGe Films." MRS Proceedings 1551 (2013): 75–80. http://dx.doi.org/10.1557/opl.2013.1019.
Повний текст джерелаVolodin, V. A., A. I. Yakimov, A. V. Dvurechenskiĭ, M. D. Efremov, A. I. Nikiforov, E. I. Gatskevich, G. D. Ivlev, and G. Yu Mikhalev. "Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation." Semiconductors 40, no. 2 (February 2006): 202–9. http://dx.doi.org/10.1134/s1063782606020175.
Повний текст джерелаKolobov, A. V. "Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations." Journal of Applied Physics 87, no. 6 (March 15, 2000): 2926–30. http://dx.doi.org/10.1063/1.372279.
Повний текст джерелаLodari, M., D. Chrastina, V. Mondiali, M. R. Barget, J. Frigerio, E. Bonera, and M. Bollani. "Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures." Nanoscience and Nanotechnology Letters 9, no. 7 (July 1, 2017): 1128–31. http://dx.doi.org/10.1166/nnl.2017.2449.
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