Статті в журналах: "Si (111) Substrates"

1

Severino, Andrea, Ruggero Anzalone, Corrado Bongiorno, M. Italia, Giuseppe Abbondanza, Massimo Camarda, L. M. S. Perdicaro, Giuseppe Condorelli, Marco Mauceri, and Francesco La Via. "Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si." Materials Science Forum 615-617 (March 2009): 149–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.149.

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The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.

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2

Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang, and Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

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Koryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov, and Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates." Materials 15, no. 18 (September 6, 2022): 6202. http://dx.doi.org/10.3390/ma15186202.

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In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC(111¯) facets. The SiC(111)/(111¯) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN(101¯3)||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN(101¯3) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.

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Ferro, Gabriel, Taguhi Yeghoyan, François Cauwet, Stéphane Coindeau, Thierry Encinas, and Véronique Soulière. "3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations." Materials Science Forum 1062 (May 31, 2022): 23–27. http://dx.doi.org/10.4028/p-aaf11g.

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This work investigates the 3C-SiC heteroepitaxial growth on silicon substrates having a wide variety of orientations, i.e. (100) on axis and 2°off, (111), (110), (211), (311), (331), (510), (553) and (995). All the 3C-SiC layers were grown using the same two-step CVD process with a growth rate of 2 μm/h. According to X-ray diffraction characterizations, direct heteroepitaxy (layer having exactly the same orientation as the substrate) was successful on most of the Si substrates except for (110) one which was the only orientation leading to obvious polycrystalline deposit. Each layer led to a specific surface morphology, the smoothest being the ones grown on Si (100)2°off, and (995) substrates. None of these layers cracked upon cooling though those grown on Si (111), (211) and (553) substrates were highly bowed.

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5

Sadoh, Taizoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, and Masanobu Miyao. "SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator." Key Engineering Materials 470 (February 2011): 8–13. http://dx.doi.org/10.4028/www.scientific.net/kem.470.8.

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We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

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6

Zhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak, and Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.

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Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

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7

Isshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, and Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations." Materials Science Forum 600-603 (September 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.

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8

Handa, Hiroyuki, Shun Ito, Hirokazu Fukidome, and Maki Suemitsu. "Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates." Materials Science Forum 711 (January 2012): 242–45. http://dx.doi.org/10.4028/www.scientific.net/msf.711.242.

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By conducting a heteroepitaxy of a 3C-SiC film on a Si substrate and by annealing its surface in a UHV ambient, epitaxial graphene can be formed on such 3C-SiC virtual substrates. While the growth on the Si-terminated 3C-SiC(111)/Si (111) surface is known to proceed in a similar manner as on the Si-terminated 6H-SiC(0001) surface, successful growth of graphene on 3C-SiC(100)/Si (100) and 3C-SiC(110)/Si (110) surfaces remains puzzling. We have carried out detailed cross-sectional transmission-electron-microscopy observations on these systems to find out that (111)-facets may play crucial roles in the initiation of graphene on these surfaces. This observation also accounts for the absence of the interface layer at the graphene/SiC in these orientations.

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9

Lee, Dong Nyung. "Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates." Advanced Materials Research 26-28 (October 2007): 623–28. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.623.

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Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.

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10

Go, Hyun Young, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Osamu Sakurai, Jeffrey S. Cross, M. Tanaka, and Kazuo Shinozaki. "Ferroelectric Properties of Epitaxial BiFe_0.97Mn_0.03O₃ Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates." Key Engineering Materials 421-422 (December 2009): 111–14. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.111.

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We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

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11

Kuan, T. S., S. S. Iyer, and E. M. Yeo. "GexSi1-x/Si superlattices grown on (100)-, (111)-, and (110)-oriented Si substrates." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 580–81. http://dx.doi.org/10.1017/s0424820100154871.

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GexSi1-x/Si heterostructures have been studied extensively because of their potential device applications. Previous GexSi1-x/Si heteroepitaxy studies have been mostly confined to growth on (100) surfaces and have focused on how growth temperature and GexSi1-x layer thickness affect growth morphology and defect generation. In this work we compare the quality of GexSi1-x/Si superlattices grown on (100)-, (111)-, and (110)-oriented Si substrates. We find that these three growth directions give rise to different growth morphologies and defect structures. Strained GexSi1-x layers in a (100) GexSi1-x/Si superlattice annealed at 450 – 500°C have recently been reported to exhibit a CuPt-type long-range order. Thus, another objective of this work is to explore whether growth along the <110> and/or <111> directions can promote or suppress the onset of ordering.Superlattices consisting of 18 layers of alternating Ge0.5Si0.5 (5 nm) and Si (20 nm) were grown by molecular beam epitaxy (MBE). Before growing the superlattice, a 3D-nm-thick Si buffer layer was grown on the Si substrate.

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12

Riah, Badis, Julien Camus, Abdelhak Ayad, Mohammad Rammal, Raouia Zernadji, Nadjet Rouag, and Mohamed Abdou Djouadi. "Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer." Coatings 11, no. 9 (September 3, 2021): 1063. http://dx.doi.org/10.3390/coatings11091063.

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This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

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Kandilioti, Georgia, Angeliki Siokou, Vasiliki Papaefthimiou, Stella Kennou, and Vasilis G. Gregoriou. "Molecular Composition and Orientation of Interstitial versus Surface Silicon Oxides for Si(111)/SiO2 and Si(100)/SiO2 Interfaces using FT-IR and X-ray Photoelectron Spectroscopies." Applied Spectroscopy 57, no. 6 (June 2003): 628–35. http://dx.doi.org/10.1366/000370203322005300.

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This work represents a characterization study of silicon oxide on Si(111) and Si(100) surfaces intended for use as substrates in organic light-emitting diodes (OLEDs) on chip devices. Samples have been prepared using either native oxide formation or thermal oxidation, and they have also been treated for activation of hydroxyl groups on their surface. Both Fourier transform infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS) have been used in order to understand the molecular orientation as well as the chemical composition of the various oxide types formed during these different oxidation processes. These spectroscopic studies reveal the formation of two different types of oxides on these substrates. The first type is a thin oxide layer on the surface, whereas the second type, called interstitial, is found deeper in the substrate. Specifically, it was found that the Si(100) substrate forms a randomly oriented interstitial oxide, whereas the presence of a lower quantity but more oriented interstitial oxide was found for the Si(111) substrate. In addition, we report for the first time the position of the impurity oxygen for Si(111) substrates at 1122 cm−1. Finally, in both Si(100) and Si(111) substrates, the thin (<15 Å) silicon oxide layers are oriented and appear to contain silicon atoms of similar oxidation states. In contrast, both the thicker surface film (100 Å) as well as the interstitial oxide produced by the thermal oxidation procedure show random orientation and relative uniformity. Overall these orientation studies clearly show that the formation process of surface oxides in different substrates clearly creates species that are oriented differently with respect to the surface.

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CHOU, L. J., M. L. HUANG, J. Y. HSIEH, Y. L. CHUEH, S. GWO, C. C. HSUEH, and SAM PAN. "INTERFACIAL STRUCTURES OF Si3N4 on Si (100) & Si (111)." International Journal of Modern Physics B 16, no. 28n29 (November 20, 2002): 4493–96. http://dx.doi.org/10.1142/s0217979202015686.

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The initial stages of NH 3 exposure on Si (100) & Si (111) at different substrate temperatures and post annealing in different ambient gases have been investigated. On the Si (100) surface, at 850°C and very high (~ 1050°C) temperatures, NH 3 dissociated and nitridized the Si interface. The degree of nitride crystallization has been enhanced at elevated temperature (~ 1050°C). The interfacial trapped density is lower at higher temperature. I-V measurements indicated that the electrical properties are improved as the substrate temperature is raised. The results were directly related to the better interfacial registry. For the Si(111) substrates, the trends are similar to Si(100), but are more prominent.

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Xin, Y., S. Rujirawat, G. Brill, N. D. Browning, S. J. Pennycook, S. Sivananthan, and R. Sporken. "Investigating the Effect of As and Te Passivation on the MBE Growth of Cdte (111) On Si (111) Substrates." Microscopy and Microanalysis 5, S2 (August 1999): 724–25. http://dx.doi.org/10.1017/s1431927600016949.

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The epitaxial growth of CdTe on Si is currently being investigated as a means of generating an alternative substrate for the subsequent growth and processing of HgCdTe based infrared detecting devices. The most favorable orientation for the growth of high-quality HgCdTe is CdTe (111)B, which has been demonstrated to be grown on miscut Si (001) substrates with very high quality . However, twinning islands and multiple domains are present at the nucleation stage, which has a detrimental effect on the device properties.An alternative approach, which has the potential to overcome the multiple domain problems in the nucleation stage, is to grow CdTe (111) B on Si (111) substrates. However, previous reports have shown that the direct growth of CdTe onto Si (111) results in an A-polarity for the films . In an attempt to overcome this limitation, passivation of the substrate surface has been investigated.

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16

Chiang, Yi-Ting, Yi Chou, Chang-Hsun Huang, Wei-Ting Lin, and Yi-Chia Chou. "Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process." CrystEngComm 21, no. 29 (2019): 4298–304. http://dx.doi.org/10.1039/c9ce00539k.

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17

Martins, Rui M. S., Manfred Beckers, A. Mücklich, Norbert Schell, Rui Jorge C. Silva, Karimbi Koosappa Mahesh, and Francisco Manuel Braz Fernandes. "The Interfacial Diffusion Zone in Magnetron Sputtered Ni-Ti Thin Films Deposited on Different Si Substrates Studied by HR-TEM." Materials Science Forum 587-588 (June 2008): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.587-588.820.

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Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanical devices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusion and chemical interactions at the interface due to the high temperature processing necessary to crystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputtering from Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circle goniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objective of this study has been to investigate the interfacial structure resulting from depositions (at a temperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Si substrates. A detailed High-Resolution TEM analysis of the interfacial structure has been performed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into the substrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Ti deposited on Si(111), there appears an uniform thickness plate, due to the alignment between substrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion is inhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which are favourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphology of the diffusion interface is strongly dependent on the type of substrates.

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Beisenov, R., R. Ebrahim, Z. A. Mansurov, S. Zh Tokmoldin, B. Z. Mansurov, and A. Ignatiev. "Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD." Eurasian Chemico-Technological Journal 15, no. 1 (December 24, 2012): 25. http://dx.doi.org/10.18321/ectj136.

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Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic structure, surface composition and morphology have been investigated by XRD, AES, SEM and AFM analysis. SiC films of 5-7 micron thickness were grown at a rate of ~ 40 nm/min on sapphire (0001) and Si (111) substrates. The films grown at low temperature (850 ºC and 900 ºC) on both substrates show crystalline 3C-SiC in the (111) orientation. XRD results show that the orientation of the crystal structure does not depend of the substrate orientation AFM pictures of SiC films grown on sapphire (0001) exhibit more crystalline order as compared to films grown on the Si (111) substrates. AES of the grown films shows that in both cases the Si peak intensity is greater than that of carbon. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to IIInitrides LED and UV photodetector fabrication and also for gas detector application.

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Chen, Wei-Chun, Tung-Yuan Yu, Fang-I. Lai, Hung-Pin Chen, Yu-Wei Lin, and Shou-Yi Kuo. "Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy." Crystals 9, no. 6 (June 5, 2019): 291. http://dx.doi.org/10.3390/cryst9060291.

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Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

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Кукушкин, С. А., А. М. Мизеров, А. С. Гращенко, А. В. Осипов, Е. В. Никитина, С. Н. Тимошнев, А. Д. Буравлев та М. С. Соболев. "Фотоэлектрические свойства слоев GaN, выращенных методом молекулярно-лучевой эпитаксии с плазменной активацией на подложках Si(111) и эпитаксиальных слоях SiC на Si(111)". Физика и техника полупроводников 53, № 2 (2019): 190. http://dx.doi.org/10.21883/ftp.2019.02.47097.8915.

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AbstractThe photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical silicon substrates, but with different buffer layers, are experimentally investigated. The GaN/SiC/Si(111) structure is formed on a Si substrate with the SiC buffer layer grown by a new atom-substitution technique and the GaN/Si(111) structure, on a Si substrate subjected to pre-epitaxial plasma nitridation. The significant effect of carbon-vacancy clusters contained in the SiC layer on the growth of the GaN layer and its optical and photoelectric properties is found. It is experimentally established that the GaN/SiC/Si(111) heterostructure has a higher photosensitivity than the GaN/Si(111) heterostructure. In the GaN/SiC/Si(111) heterostructure, the coexistence of two oppositely directed p – n junctions is observed. One p – n junction forms at the SiC/Si interface and the other, at the GaN/SiC interface. It is shown that the occurrence of an electric barrier in the GaN/Si(111) heterostructure at the GaN/Si(111) heterointerface is caused by the formation of a thin silicon-nitride transition layer during pre-epitaxial plasma nitridation of the Si(111) substrate.

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Suemitsu, Maki, Shota Sanbonsuge, Eiji Saito, Myung Ho Jung, Hirokazu Fukidome, and Sergey Filimonov. "High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon." Materials Science Forum 740-742 (January 2013): 327–30. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.327.

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In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

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Jung, Hun Chae, Han Ki Yoon, and Yun Sik Yu. "Mechanical Properties and Process of ZnO Deposited Various Substrates." Key Engineering Materials 297-300 (November 2005): 533–38. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.533.

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ZnO is an n-type semiconductor having a hexagonal wurzite structure. ZnO exhibits good piezoelectric, photoelectric and optical properties and might be a good candidate for an electroluminescence device like an UV laser diode. But the important problems, such as substrate kinds and substrate temperature are raised its head, so they need to optimize deposit condition. Because these devices are very small and films are very thin, those are often prepared in limited quantities and shapes unsuitable for the extensive mechanical test. In this present work, ZnO thin films are prepared on the glass, GaAs (100), Si (111) and Si (100) substrates at different temperatures by the pulsed laser deposition (PLD) method. ZnO was evaluated in term of crystalline through X-ray diffraction (XRD), mechanical properties such as hardness, elastic modulus through nano-indenter. XRD measurements indicate that the substrate temperature of 200-500, 200-500, 300-500, and 300-500oC was the optimized conditions of crystalline for the glass, GaAs (100), Si (111), and Si (100) substrates, respectively. In spite of the films deposited on the different substrates, the films always show (002) orientation at the optimized conditions. Mechanical properties such as hardness and elastic modulus are influenced substrate crystallization. In case of Si (111) substrate, hardness and elastic modulus are about 10, 150GPa, respectively.

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23

Artoni, Pietro, Alessia Irrera, Emanuele Francesco Pecora, Simona Boninelli, Corrado Spinella, and Francesco Priolo. "Heteroepitaxial Growth of Ge Nanowires on Si Substrates." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/782835.

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Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained.

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24

Watts, Bernard Enrico, Giovanni Attolini, Tullo Besagni, Matteo Bosi, Claudio Ferrari, Francesca Rossi, Ferenc Riesz, and Liu Di Jiang. "Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates." Materials Science Forum 679-680 (March 2011): 137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.137.

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To assess deformation issues in SiC/Si, different pre-growth procedures were investigated, involving the addition of SiH4 to C3H8 during the temperature ramps used for the carbonization. 3C-SiC layers were deposited on (001) and (111) Si substrates by VPE. The mechanical deformation of the wafer was measured by makyoh, obtaining 2D maps of the entire wafers. For the same pre-growth procedures, the substrate curvature depends strongly on the orientation of the substrate, (001) or (111), being generally lower for (111) substrates. The deformation results were compared with XRD and Raman spectroscopy. Plastic deformation of the substrate was evidenced by XRD, while the presence of tensile stress is suggested by Raman analysis.

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25

Chuang, Tung-Han, Po-Ching Wu, Yu-Chang Lai, and Pei-Ing Lee. "Low-Temperature Direct Bonding of 3D-IC Packages and Power IC Modules Using Ag Nanotwinned Thin Films." International Journal of Manufacturing, Materials, and Mechanical Engineering 12, no. 1 (January 1, 2022): 1–16. http://dx.doi.org/10.4018/ijmmme.313037.

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Ag has the lowest stacking fault energy of all metals, which allows twin formation to occur more easily. The (111)-preferred orientation Ag nanotwinned films is fabricated by either sputtering or evaporation method exhibit columnar Ag grains grown vertically on Si substrates. Ag nanotwinned films have a (111)-preferred orientation with a density about 98% and diffusivity that is 2 to 5 orders of magnitude higher than those of (100) and (110) surfaces. Low temperature direct bonding with (111)-oriented Ag nanotwins films is proposed to fulfil the requirements for wafer-on-wafer (WoW), chip-on-wafer (CoW), and chip-on-wafer-on-substrate (CoWoS) advanced 3D-IC packaging, with the process temperature drastically reduced to 100°C. Such an innovative bonding method also provides a promising solution for die attachment of Si chips with DBC-ceramic substrates for power module packaging.

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26

Timoshnev, S. N., A. M. Mizerov, M. N. Lapushkin, S. A. Kukushkin, and A. D. Bouravleuv. "Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates." Semiconductors 53, no. 14 (December 2019): 1935–38. http://dx.doi.org/10.1134/s1063782619140239.

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27

Kukushkin S. A., Osipov A. V., Redkov A. V., Stozharov V. M., Ubiyvovk E. V., and Sharofidinov Sh. Sh. "Peculiarities of nucleation and growth of InGaN nanowires on SiC/Si substrates by HVPE." Technical Physics Letters 48, no. 2 (2022): 66. http://dx.doi.org/10.21883/tpl.2022.02.53584.19056.

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The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000oC). On substrates with orientations (110) and (111), the formation of InGaN whisker nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside V-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations. Keywords: InGaN, heterostructures, SiC on Si, silicon, whisker nanocrystals, nanostructures, atomic substitution method

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28

Tsukanov D. A. and Ryzhkova M. V. "Study of structural and electrical properties of the reconstructed Si(111) surface after lithium adsorption." Technical Physics 92, no. 8 (2022): 1040. http://dx.doi.org/10.21883/tp.2022.08.54570.83-22.

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The results of a study of the crystal structure and surface conductivity of a Si(111) silicon substrate with a reconstructed surface after deposition of submonolayer doses of lithium are presented. We used the method of low energy electron diffraction to study changes in the structure of the crystal lattice of the surface, as well as the four-point probe method for measuring the conductivity of substrates under in situ conditions. As the initial surfaces, we used the Si(111)7x7 reconstruction of an atomically clean silicon substrate, and the reconstructions obtained by adsorption of 1 ML of gold, lead, and bismuth atoms: Si(111)β-3x3-Au, Si(111)1x1-Pb and Si(111)β-3x3-Bi, respectively. Keywords: silicon surface, adsorption, surface reconstruction, surface conductivity, low-energy electron diffraction.

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29

Kokott, Sebastian, Lars Matthes, and Friedhelm Bechstedt. "Silicene on hydrogen-passivated Si(111) and Ge(111) substrates." physica status solidi (RRL) - Rapid Research Letters 7, no. 8 (June 25, 2013): 538–41. http://dx.doi.org/10.1002/pssr.201307215.

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30

Biswas, R., K. Roos, and M. C. Tringides. "Low-temperature growth on Si(111) substrates." Physical Review B 50, no. 15 (October 15, 1994): 10932–40. http://dx.doi.org/10.1103/physrevb.50.10932.

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31

LIU, HONG-YU, XUE-MING MA, and WANG-ZHOU SHI. "INFLUENCE OF SUBSTRATE TEMPERATURE ON TRANSFORMATION OF PREFERRED ORIENTATIONS IN AlN FILMS." Modern Physics Letters B 19, no. 30 (December 30, 2005): 1775–82. http://dx.doi.org/10.1142/s0217984905010384.

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Polycrystalline aluminium nitride (AlN) films were deposited on silicon substrates by pulsed laser deposition (PLD) at a substrate temperature in the range room temperature (RT)-800° C . Films grown on Si (111) substrates feature (002) and (110) preferred orientations at substrate temperatures below 400°C and above 600°C, respectively. Films morphology is good enough for surface acoustic wave (SAW) devices. The mechanism for formation and transformation of different preferred orientations in AlN films is discussed.

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32

Кукушкин, С. А., А. В. Осипов, А. В. Редьков, В. М. Стожаров, Е. В. Убыйвовк та Ш. Ш. Шарофидинов. "Особенности зарождения и роста нитевидных нанокристаллов InGaN на подложках SiC/Si методом хлорид-гидридной эпитаксии". Письма в журнал технической физики 48, № 4 (2022): 24. http://dx.doi.org/10.21883/pjtf.2022.04.52080.19056.

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Анотація:

The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000C). On substrates with orientations (110) and (111), the formation of InGaN nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside V-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations.

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33

Reiprich, Johannes, Thomas Stauden, Theresa Berthold, Marcel Himmerlich, Jörg Pezoldt, and Heiko O. Jacobs. "Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates." Materials Science Forum 897 (May 2017): 642–45. http://dx.doi.org/10.4028/www.scientific.net/msf.897.642.

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Gallium oxide nanowires were grown on different substrates using a corona plasma assisted vapor phase epitaxy process and gold catalyst. It is shown that the silicon carbide pseudo substrate in combination with the plasma excitation of the gas phase supports the growth of the gallium oxide nanowires. Analyzing the orientation of the nanowires with respect to the growth surface, it is concluded that the nanowires growth proceed along the fast growth direction of gallium oxide.

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34

Miura, Kentaro, Takuya Ohishi, Takashi Inaba, Yusuke Mizuyoshi, Noriyuki Takagi, Takashi Matsuyama, Yoshimi Momose, Tadanobu Koyama, Yasuhiro Hayakawa, and Hirokazu Tatsuoka. "Growth evolution of Sr-silicide layers on Si(111) and Mg2Si/Si(111) substrates." Thin Solid Films 508, no. 1-2 (June 2006): 74–77. http://dx.doi.org/10.1016/j.tsf.2005.06.110.

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35

Angermann, H., W. Henrion, A. Röseler, and M. Rebien. "Wet-chemical passivation of Si(111)- and Si(100)-substrates." Materials Science and Engineering: B 73, no. 1-3 (April 2000): 178–83. http://dx.doi.org/10.1016/s0921-5107(99)00457-2.

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36

Zaumseil, P., T. Schroeder, and G. Weidner. "Structural Characterization of Epitaxial Si / Pr₂O₃ / Si(111) Heterostructures." Solid State Phenomena 108-109 (December 2005): 741–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.741.

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The use of heteroepitaxial Si / Pr2O3 / Si(111) systems as semiconductor-insulatorsemiconductor (SIS) stacks in future applications requires a detailed structural characterization. We used X-ray reflectivity (XRR) to control layer thickness and interface roughness, standard X-ray diffraction (XRD) to analyze the Pr2O3 phase, orientation and crystal perfection, and grazing incidence XRD to study the thin epitaxial Si top layer. Transmission electron microscopy (TEM) was used to prove the results by direct imaging on a microscopic scale. Pr2O3 grows epitaxially in its hexagonal phase and (0001) orientation on Si(111) substrates. An epitaxial Si overgrowth in (111) orientation and good perfection is possible, but such Si layers exhibit two stacking twins, one with the same in-plane orientation as the substrate and one rotated by 180° around the Si [111] direction.

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37

Yamamoto, Yuji, Wei-Chen Wen, Markus Andreas Schubert, Cedic Corley-Wiciak, and Bernd Tillack. "High Quality Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1213. http://dx.doi.org/10.1149/ma2022-02321213mtgabs.

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Heteroepitaxial growth of Ge on Si has great interest for various optoelectronic applications such as Ge photodiodes(1). However 4.2% of lattice mismatch causes dislocation formation and island growth. High quality Ge(001) growth techniques are reported in ref.(2-4). Moreover, Ge(111) surface is also interesting because of higher carrier mobility(5). Furthermore, Ge(110) is preferred orientation of virtual substrates for epitaxial graphene growth(6). In the case of the Ge deposition on Si(111) and Si(110) substrates, it seems that the process conditions used for Ge growth on Si(001) are not suitable to realize high crystallinity and smooth surface (7). In this paper, we present a method of high quality and smooth Ge layer growth on Si(111) and Si(110), which is the same level as the Ge growth on Si(001). Epitaxial growth of Ge on Si(111) and Si(110) is carried out using a reduced pressure chemical vapor deposition system. After HF last clean, a wafer is baked at 1000°C and cooled down to 600°C in H2 and further to 300-550°C in N2 to form a hydrogen-free Si surface. Then a 100 nm thick Ge layer is deposited as a seed layer using GeH4 with N2 carrier gas. Afterward the wafer is heated up to 450-650°C in H2 and the main part of Ge is deposited using a H2-GeH4 gas mixture. For threading dislocation density (TDD) reduction, annealing at 800°C in H2 is performed for several times (cyclic annealing) by interrupting the Ge growth. Atomic-force microscopy (AFM) is used for surface roughness analysis. Scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) are used for structural characterization of the Ge layer. Secco defect etching combined with angle view scanning electron microscopy (SEM) or optical microscope is used for TDD evaluation. Figure 1(a,b) summarize the root mean square (RMS) roughness of Ge(111) and Ge(110) seed layers grown at 300-550°C before and after postannealing at 600-800°C. If the growth temperature is lower than 350°C for Ge(111) and 400°C for Ge(110), a significant increase of the surface roughness is observed after postannealing at 700°C and 800°C, respectively. For both crystal orientations, the lowest RMS roughness is observed by depositing at 450°C for as deposited and postannealed samples. The maintained RMS roughness even after postannealing at 800oC may be indicating good crystal quality even at as deposited condition. To confirm the influence of the growth temperature on the crystallinity, cross section TEM images of the Ge(111) and the Ge(110) seed layers deposited at 300°C and 450°C are shown in Fig. 2(a-d). In the case of Ge growth at 300°C (Fig. 2(a,b)), a very high density of stacking faults (SF) and high surface roughness are observed for both crystal orientations. In contrast, by depositing at 450°C (Fig. 2(c,d)), lower SF density in the Ge layer is observed compared to that at 300°C. By postannealing, an improvement of crystallinity is observed for the Ge seed layers deposited at 450°C. However, in the case of 300°C, the crystallinity cannot be improved by the postannealing, because a too high density of dislocations and SF may cause irregular Ge atom migration. As the result, surface roughening occurs. Figure 3(a,b) show AFM surface roughness images after 5 μm-thick Ge(111) and Ge(110) deposited with cyclic annealing at 800°C, respectively. Clear terraces of ~0.3 and ~0.2 nm, whose heights are close to those of Ge(111) bilayer and Ge(110) monolayer, are observed, respectively. RMS roughness of the Ge(111) and the Ge(110) are 0.51 and 0.35 nm, respectively. These RMS roughnesses are comparable to a level reported for Ge (001) in ref.(1). Figure 4 shows TDD of Ge(111) and Ge(110) surfaces as a function of the Ge thickness deposited with cyclic annealing on Si(111) and Si(110) substrates. For both orientations, TDD of ~4×108 cm-2 is obtained for 500 nm-thick samples. With increasing the Ge thickness, the TDD is reduced and levels below TDD of ~5×106 cm-2 are achieved for both Ge (111) and Ge(110) for 5 μm-thick Ge. These methods enable high quality virtual substrate fabrication not only for (001) surfaces but also for (111) and (110) orientation without a chemical mechanical polishing process. References Lischke et al. Nature Photonics15 (2021) 925 Yamamoto et al. Solid-State Electron. 60 (2010) 2 Yamamoto et al. Semicond. Sci. Technol. 33 (2018) 124007 M. Hartmann et al. J. Appl. Phys. 95 (2004) 5905 H. Lee et al. IEDM Tech. Digest (2009) 09-457 J-H. Lee et al. Science 344 6181(2014) 286 M. Hartmann et al. J. Cryst. Growth 310 (2008) 5287 Figure 1

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38

Tonisch, Katja, Wael Jatal, Ralf Granzner, Mario Kittler, Uwe Baumann, Frank Schwierz, and Jörg Pezoldt. "2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates." Materials Science Forum 645-648 (April 2010): 1219–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1219.

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We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures grown on silicon substrates using a SiC transition layer. The growth of AlGaN/GaN heterostructures on Si (111) was performed using metalorganic chemical vapour deposition (MOCVD). The (111) SiC transition layer was realized by low pressure CVD and prevented Ga-induced meltback etching and Si-outdiffusion in the subsequent MOCVD growth. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface showed an electron sheet density of 1.5x1013 cm-3 and a mobility of 870 cm²/Vs proving the high structural quality of the heterostructure. Device processing was done using electron beam lithography. DC and RF characteristics were analysed and showed a peak cut-off frequency as high as 6 GHz for a 1.2 µm gate HEMT.

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39

Sobanska, Marta, Núria Garro, Kamil Klosek, Ana Cros, and Zbigniew R. Zytkiewicz. "Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies." Electronics 9, no. 11 (November 13, 2020): 1904. http://dx.doi.org/10.3390/electronics9111904.

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The growth of GaN nanowires having a polar, wurtzite structure on nonpolar Si substrates raises the issue of GaN nanowire polarity. Depending on the growth procedure, coexistence of nanowires with different polarities inside one ensemble has been reported. Since polarity affects the optical and electronic properties of nanowires, reliable methods for its control are needed. In this work, we use Kelvin probe force microscopy to assess the polarity of GaN nanowires grown by plasma-assisted Molecular Beam Epitaxy on Si(111) substrates. We show that uniformity of the polarity of GaN nanowires critically depends on substrate processing prior to the growth. Nearly 18% of nanowires with reversed polarity (i.e., Ga-polar) were found on the HF-etched substrates with hydrogen surface passivation. Alternative Si substrate treatment steps (RCA etching, Ga-triggered deoxidation) were tested. However, the best results, i.e., purely N-polar ensemble of nanowires, were obtained on Si wafers thermally deoxidized in the growth chamber at ~1000 °C. Interestingly, no mixed polarity was found for GaN nanowires grown under similar conditions on Si(111) substrates with a thin AlOy buffer layer. Our results show that reversal of nanowires’ polarity can be prevented by growing them on a chemically uniform substrate surface, in our case on clean, in situ formed SiNx or ex situ deposited AlOy buffers.

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40

Yang, Zi Yi, Zheng Tong Hao, and Quan Xie. "Effects of Heat Treatment on Growth of BaSi₂ Film on Si(111) Substrates." Materials Science Forum 663-665 (November 2010): 1273–76. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1273.

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Semiconducting orthorhombic BaSi2 films were synthesized on Si(111) substrates using magnetron sputtering (MS) and subsequent annealing by interdiffusion between the deposited Ba film and Si(111) substrate. The structural and morphological features of the result films are analysed. The growth mechanism and the evolution of the silicides are discussed. The effects of annealing temperature and annealing time on the growth of the BaSi2 film are studied.

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41

Daykin, A. C., C. J. Kiely, and R. C. Pond. "A Transmission Electron Microscopy study of the B-type CoSi2/Si(111) interface." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 384–85. http://dx.doi.org/10.1017/s0424820100175053.

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CoSi2 layers grown on clean Si(111) substrates can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate, whereas the B-type CoSi2 is rotated by 180° about the [111] surface normal. The epitaxial films studied were prepared by depositing Co on to a Si(111) surface at room temperature under UHV conditions and annealing at 650°C. This produces mixed A and B-type CoSi2 of approximately 50Å thickness. Fig.1a shows a diffraction pattern taken on tilting the bicrystal such that the beam direction is [114] in the Si and [110] in B-type CoSi2, the corresponding schematic diagram is shown in Fig.1b. Dark field microscopy can be used to image g=111 B-type CoSi2 reflections which, if at the exact Bragg condition, give rise to images such as Fig.2.The micrograph shows B-type CoSi2 with some strongly diffracting areas and at least three other different weaker contrasts. This paper is a study of the origins of the contrast effects noted in Fig.2.

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42

Shubina, K. Yu, D. V. Mokhov, T. N. Berezovskaya, E. V. Pirogov, A. V. Nashchekin, Sh Sh Sharofidinov, and A. M. Mizerov. "Separation of AlN layers from silicon substrates by KOH etching." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012037. http://dx.doi.org/10.1088/1742-6596/2086/1/012037.

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Abstract In this work, the AlN/Si(111) epitaxial structures grown consistently by plasma assisted molecular beam epitaxy (PA MBE) and hydride vapour phase epitaxy (HVPE) methods were studied. The PA MBE AlN buffer layers were synthesized via coalescence overgrowth of self-catalyzed AlN nanocolumns on Si(111) substrates and were used as templates for further HVPE growth of thick AlN layer. It was shown that described approaches can be used to obtain AlN layers with sufficiently smooth morphology. It was found that HVPE AlN inherited crystallographic polarity of the AlN layer grown by PA MBE. It was demonstrated that the etching of such AlN/Si(111) epitaxial structures results in partial separation of the AlN epilayers from the Si(111) substrate and allows to form suspended structures. Moreover, the avoidance of surface damage and backside overetching was achieved by use thin Cr film as surface protective coating and by increasing the layer thickness accordingly.

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43

Мизеров, А. М., С. А. Кукушкин, Ш. Ш. Шарофидинов, А. В. Осипов, С. Н. Тимошнев, К. Ю. Шубина, Т. Н. Березовская, Д. В. Мохов та А. Д. Буравлев. "Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si". Физика твердого тела 61, № 12 (2019): 2289. http://dx.doi.org/10.21883/ftt.2019.12.48535.06ks.

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The effect of GaN polarity inversion from N- to Ga-face during the successive growth of GaN layers by plasma assisted molecular beam epitaxy and halide vapor phase epitaxy on hybrid SiC/Si(111) substrates was found. A new method of the formation of crack-free Ga-face GaN/AlN heterostructures on hybrid SiC/Si(111) substrates has been developed. In this method the two stage growth of GaN layers is used. At the first stage, the N-face GaN transition layer was grown on the SiC/Si(111) surface by plasma assisted molecular beam epitaxy. At the second stage, the AlN interlayer was first grown by halide vapor phase epitaxy on N-face GaN transition layer. After that the Ga-face GaN layer was synthesized by halide vapor phase epitaxy atop of the AlN interlayer. Also it was found that etching in a KOH solution affects only the N-face GaN transition layer and leads to its complete removal, which result in complete separation of the main Ga-face GaN layer from the SiC/Si(111) substrate. The method allows you to grow free from cracks and unstressed thick layers of GaN, and transfer them to the foreign substrates.

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44

Sato, Yuichi. "GaN Thin-Film-Depositions on Glass and Amorphous-SiO₂-Layer-Deposited Si Single-Crystalline Substrates." Materials Science Forum 879 (November 2016): 1703–8. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1703.

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Gallium nitride (GaN) transparent and semiconducting thin films were prepared on an amorphous glass substrate by a reactive sputtering method using Ar-N2 radio-frequency plasmas. In addition, GaN thin films were prepared on amorphous silicon-dioxide (SiO2) layer-deposited Si (111) single-crystalline substrates by a reactive evaporation method. Optical transmission properties, electrical properties, and crystallinities of the films prepared on the glass substrate were investigated as a function of the mixing ratio of the reactive sputtering gases. On the other hand, variations in the crystallinities of the films prepared on the amorphous SiO2 layer-deposited Si (111) substrates were investigated as a function of the thickness of the amorphous SiO2 layers.

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45

Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, and Shan Yun. "InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates." Acta Physica Sinica 63, no. 20 (2014): 207304. http://dx.doi.org/10.7498/aps.63.207304.

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46

Anzalone, Ruggero, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, and Francesco La Via. "3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor." Materials Science Forum 600-603 (September 2008): 243–46. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.243.

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The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the silicon growth precursor. With this precursor it has been shown that it is possible to simultaneously increase the growth rate of the process and avoid the nucleation of silicon droplets in the gas phase. Growth experiments were conducted on three (3) Si substrate orientations in order to assess the impact of the Si substrate on the resulting 3C-SiC film. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) analysis show the important role of the substrate orientation for the growth process. The different orientation of the substrate modifies the morphology of the 3C-SiC crystalline structure, mostly by changing the density of micro-twins and stacking faults inside the film.

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47

Jones, K. M., M. M. Al-Jassim, and J. M. Olson. "Electron microscope characterization of MOCVD-grown gap layers on Si." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 724–25. http://dx.doi.org/10.1017/s0424820100144991.

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The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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48

Fathauer, R. W., C. W. Nieh, Q. F. Xiao, and Shin Hashimoto. "Columnar Epitaxy of CoSi2 on Si(111), Si(100), and Si(110)." MRS Proceedings 160 (1989). http://dx.doi.org/10.1557/proc-160-255.

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AbstractEpitaxial columns of CoSi2 are produced when Si and Co are codeposited on heated Si substrates. These columns are surrounded by epitaxial Si with defect densities below the detection limit of transmission electron microscopy. This phenomenon has been studied as functions of substrate temperature, Si:Co ratio, deposition rate, thickness of the epitaxial layer, and substrate orientation. These data suggest that the distribution of columns is dictated by the nucleation of CoSi2 islands during the initial stages of the deposition.

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49

Gong, Heng, Wei Yang, David N. Lambeth, and David E. Laughlin. "Epitaxial Co/NiAl Thin Film Growth on Si Substrates." MRS Proceedings 577 (1999). http://dx.doi.org/10.1557/proc-577-359.

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ABSTRACTQuad-crystal Co/NiAl/Ag thin films were epitaxially grown on hydrofluoric acid etched Si(111) single crystal substrates by sputter deposition. The orientation relationship was studied by x-ray 0/20 diffraction and pole figure Φ-scan, and it was determined to be Co(1011) ‖ NiAl(110) ‖ Ag(111) ‖ Si(111). The Ag layer contains two twin-related orientations of grains. NiAl grows with three variants of grains on the Ag(111) layer. Since Co(1011) contains grains with four possible easy axis directions when grown on each NiAl variant, the quad-crystal media consist of grains with twelve easy axis directions and exhibit nearly isotropic in-plane magnetic properties. Meanwhile, uni-crystal Co(1010)/NiAl(112) films were also epitaxially grown on Ag(110)/HF-Si(110) templates. The orientation relationships determined from these epitaxial films were very useful in understanding the texture evolution of the Co alloys on NiAl. It indicates that the Co (1010) texture evolution on the (110) texture of NiAl on amorphous substrates, such as NiP/AlMg or glass, is due to a difficult to observe NiAI (112) texture on the top of the (110) texture.

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50

Rawdanowicz, T. A., H. Wang, A. Kvit, and J. Narayan. "Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures." MRS Proceedings 743 (2002). http://dx.doi.org/10.1557/proc-743-l3.24.

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ABSTRACTWe present the details of epitaxial growth interface structure of single wurtzite AlN thin films on (111) Si substrates by laser-molecular-beam-epitaxy. High quality AlN thin films with atomically sharp interfaces can be obtained by Laser-MBE at a substrate temperature of 650 ±10°C. X-ray diffraction and high resolution transmission electron microscopy was used to study the details of epitaxial growth of AlN on Si(111) substrate. The orientation-relationship of AlN on Si(111) was studied from Si <110> and <112> zone axis and determined to be AlN [2110]|Si[110] and AlN [0110]|Si[211]. The atomic structure of the interface was studied by high-resolution transmission electron microscopy and Fourier filtered image of cross-sectional AlN/Si(111) samples from both Si<110> and <112> zone axis. The results revealed the domain matching epitaxy of 4:5 ratio between the interplanar distances of Si(110) and AlN [2110]. We also present similarities and differences between the growth mechanism of AlN/Si(111) and GaN/Si(111) heterostructures.

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