Статті в журналах з теми "Si (111) Heterojunction"
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Chao, Xiong, Chen Lei, and Yuan Hongchun. "Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction." Open Materials Science Journal 7, no. 1 (October 31, 2013): 29–32. http://dx.doi.org/10.2174/1874088x01307010029.
Повний текст джерелаRazooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.
Повний текст джерелаHe, Xiao-Min, Zhi-Ming Chen, Lei Huang, and Lian-Bi Li. "First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction." Modern Physics Letters B 29, no. 29 (October 25, 2015): 1550182. http://dx.doi.org/10.1142/s0217984915501821.
Повний текст джерелаCho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa та Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, № 4 (4 липня 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.
Повний текст джерелаXu, Bei, Changjun Zhu, Xiaomin He, Yuan Zang, Shenghuang Lin, Lianbi Li, Song Feng, and Qianqian Lei. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction." Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.
Повний текст джерелаXiong, Chao, An Cheng Xu, Xing Zhong Lu, Lei Chen, Xi Fang Zhu, and Ruo He Yao. "Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode." Key Engineering Materials 538 (January 2013): 324–27. http://dx.doi.org/10.4028/www.scientific.net/kem.538.324.
Повний текст джерелаMahowald, P. H. "Heterojunction band discontinuity at the Si–Ge(111) interface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 4 (July 1985): 1252. http://dx.doi.org/10.1116/1.583050.
Повний текст джерелаGonzález, M. L., F. Soria, and M. Alonso. "Initial stages of heterojunction formation: Si on GaAs(111)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (May 1990): 1977–82. http://dx.doi.org/10.1116/1.576791.
Повний текст джерелаTsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang, and Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.
Повний текст джерелаAbdul Majeed E.Ibrahim, Raid A. Isma'el, Enad S.Ibrahim, and Essam M.Ibrahim. "Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis." Tikrit Journal of Pure Science 21, no. 7 (February 8, 2023): 162–66. http://dx.doi.org/10.25130/tjps.v21i7.1123.
Повний текст джерелаHOSSEINI, A., H. H. GÜLLÜ, E. COSKUN, M. PARLAK, and C. ERCELEBI. "FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS." Surface Review and Letters 26, no. 06 (July 2019): 1850205. http://dx.doi.org/10.1142/s0218625x18502050.
Повний текст джерелаAlkallas, Fatemah H., Shoug M. Alghamdi, Ameenah N. Al-Ahmadi, Amira Ben Gouider Trabelsi, Eman A. Mwafy, W. B. Elsharkawy, Emaan Alsubhe, Ayman M. Mostafa, and Reham A. Rezk. "Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application." Micromachines 14, no. 8 (July 31, 2023): 1546. http://dx.doi.org/10.3390/mi14081546.
Повний текст джерелаZhang, Yongfang, Tao Ji, Wenlong Zhang, Guoqiang Guan, Qilong Ren, Kaibing Xu, Xiaojuan Huang, Rujia Zou, and Junqing Hu. "A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency." Journal of Materials Chemistry C 5, no. 47 (2017): 12520–28. http://dx.doi.org/10.1039/c7tc04565d.
Повний текст джерелаABIDRI, B., J. P. LACHARME, M. GHAMNIA, C. A. SÉBENNE, M. EDDRIEF, and M. ZERROUKI. "EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION." Surface Review and Letters 06, no. 06 (December 1999): 1173–78. http://dx.doi.org/10.1142/s0218625x9900130x.
Повний текст джерелаZainuriah, Hassan, Sha Shiong Ng, G. L. Chew, F. K. Yam, Mat Johar Abdullah, M. Roslan Hashim, Kamarulazizi Ibrahim, and M. E. Kordesch. "Growth and Properties of GaN/Si Heterojunction." Materials Science Forum 480-481 (March 2005): 531–36. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.531.
Повний текст джерелаHussein, B. H., H. K. Hassun, B. K. H. Maiyaly, and S. H. Aleabi. "Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction." Journal of Ovonic Research 18, no. 1 (February 2022): 37–34. http://dx.doi.org/10.15251/jor.2022.181.37.
Повний текст джерелаStegemann, Bert, Jan Kegel, Lars Korte, and Heike Angermann. "Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells." Solid State Phenomena 255 (September 2016): 338–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.338.
Повний текст джерелаDeng, Tianguo, Takuma Sato, Zhihao Xu, Ryota Takabe, Suguru Yachi, Yudai Yamashita, Kaoru Toko, and Takashi Suemasu. "p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)." Applied Physics Express 11, no. 6 (May 10, 2018): 062301. http://dx.doi.org/10.7567/apex.11.062301.
Повний текст джерелаSALIM, EVAN T., MARWA S. AL WAZNY, and MAKRAM A. FAKHRY. "GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE." Modern Physics Letters B 27, no. 16 (June 6, 2013): 1350122. http://dx.doi.org/10.1142/s0217984913501224.
Повний текст джерелаDang, Zhaoying, Wenhui Wang, Jiayi Chen, Emily S. Walker, Seth R. Bank, Deji Akinwande, Zhenhua Ni, and Li Tao. "Vis-NIR photodetector with microsecond response enabled by 2D bismuth/Si(111) heterojunction." 2D Materials 8, no. 3 (March 19, 2021): 035002. http://dx.doi.org/10.1088/2053-1583/abea65.
Повний текст джерелаRoul, Basanta, Deependra Kumar Singh, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda, and S. B. Krupanidhi. "Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height." Journal of Applied Physics 129, no. 24 (June 28, 2021): 244502. http://dx.doi.org/10.1063/5.0056053.
Повний текст джерелаHunger, R., Chr Pettenkofer, and R. Scheer. "Dipole formation and band alignment at the Si(111)/CuInS[sub 2] heterojunction." Journal of Applied Physics 91, no. 10 (2002): 6560. http://dx.doi.org/10.1063/1.1458051.
Повний текст джерелаPan, M., S. P. Wilks, P. R. Dunstan, M. Pritchard, R. H. Williams, D. S. Cammack, and S. A. Clark. "Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets." Thin Solid Films 343-344 (April 1999): 605–8. http://dx.doi.org/10.1016/s0040-6090(98)01708-8.
Повний текст джерелаSittimart, Phongsaphak, Adison Nopparuchikun та Nathaporn Promros. "Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering". Advances in Materials Science and Engineering 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/6590606.
Повний текст джерелаHeo, Joo-Hoe, Hyuk-Hyun Ryu, and Jong-Hoon Lee. "Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness." Korean Journal of Materials Research 21, no. 1 (January 27, 2011): 34–38. http://dx.doi.org/10.3740/mrsk.2011.21.1.034.
Повний текст джерелаSánchez-Garcı́a, M. A., F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja, and E. Muñoz. "Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)." Journal of Applied Physics 87, no. 3 (February 2000): 1569–71. http://dx.doi.org/10.1063/1.372052.
Повний текст джерелаJi, Tao, Qian Liu, Rujia Zou, Yangang Sun, Kaibing Xu, Liwen Sang, Meiyong Liao, Yasuo Koide, Li Yu, and Junqing Hu. "An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction." Advanced Functional Materials 26, no. 9 (January 29, 2016): 1400–1410. http://dx.doi.org/10.1002/adfm.201504464.
Повний текст джерелаbinti Mohamad, Fariza, Junji Sasano, Tsutomu Shinagawa, Seiji Watase, and Masanobu Izaki. "Electrochemical Construction of (0001)-ZnO/(111)-Cu2O Heterojunction Diode with Excellent Rectification Feature." Advanced Materials Research 287-290 (July 2011): 1412–15. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1412.
Повний текст джерелаPattada, B., Jiayu Chen, M. O. Manasreh, S. Guo, D. Gotthold, M. Pophristic, and B. Peres. "Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates." Journal of Applied Physics 93, no. 9 (May 2003): 5824–26. http://dx.doi.org/10.1063/1.1561583.
Повний текст джерелаKumar, Arun, Samrat Mukherjee, Himanshu Sharma, Umesh Kumar Dwivedi, Sunil Kumar, Rajesh K. Gangwar, and Ravi Kant Choubey. "Role of deposition parameters on the properties of the fabricated heterojunction ZnS/p-Si Schottky diode." Physica Scripta 97, no. 4 (April 1, 2022): 045819. http://dx.doi.org/10.1088/1402-4896/ac6078.
Повний текст джерелаLi, Yapeng, Yingfeng Li, Jianyuan Wang, Zhirong He, Yonghong Zhang, Qi Yu, and Juncai Hou. "The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction." Journal of Electron Spectroscopy and Related Phenomena 217 (May 2017): 1–5. http://dx.doi.org/10.1016/j.elspec.2017.03.007.
Повний текст джерелаMcKernan, S., and C. B. Carter. "Observation of double ribbons in GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 928–29. http://dx.doi.org/10.1017/s0424820100106703.
Повний текст джерелаDu, Chen-Hsun, Chien-Hsun Chen, Teng-Yu Wang, Jui-Chung Hsiao, Chun-Ming Yeh, Chun-Heng Chen, J. Andrew Yeh та Peichen Yu. "Fabricating 43-μm-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates". ECS Journal of Solid State Science and Technology 4, № 8 (2015): P319—P323. http://dx.doi.org/10.1149/2.0171508jss.
Повний текст джерелаSwitzer, Jay, Avishek Banik, and Bin Luo. "(Invited) Epitaxial Electrodeposition of Wide Bandgap Semiconductors for Transparent and Flexible Electronics." ECS Meeting Abstracts MA2022-01, no. 23 (July 7, 2022): 1128. http://dx.doi.org/10.1149/ma2022-01231128mtgabs.
Повний текст джерелаLi, Yapeng, Yingfeng Li, Yonghong Zhang, Juncai Hou, Wenyi Liu, and Jianyuan Wang. "A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition." Journal of Materials Science: Materials in Electronics 28, no. 17 (May 18, 2017): 13053–57. http://dx.doi.org/10.1007/s10854-017-7137-6.
Повний текст джерелаGuan, He, Guiyu Shen, Shibin Liu, Chengyu Jiang, and Jingbo Wu. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application." Micromachines 14, no. 1 (January 9, 2023): 168. http://dx.doi.org/10.3390/mi14010168.
Повний текст джерелаDas, U. K., M. Z. Burrows, M. Lu, S. Bowden, and R. W. Birkmire. "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films." Applied Physics Letters 92, no. 6 (February 11, 2008): 063504. http://dx.doi.org/10.1063/1.2857465.
Повний текст джерелаKu, Ching-Shun, Jheng-Ming Huang, Ching-Yuan Cheng, Chih-Ming Lin, and Hsin-Yi Lee. "Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition." Applied Physics Letters 97, no. 18 (November 2010): 181915. http://dx.doi.org/10.1063/1.3511284.
Повний текст джерелаHill, D. M., F. Xu, Zhangda Lin, and J. H. Weaver. "Summary Abstract: X‐ray photoelectron spectroscopy measurements of kinetic parameters at elevated temperature for Ge/Si(111)‐7×7 heterojunction formation." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (May 1988): 1350–51. http://dx.doi.org/10.1116/1.575700.
Повний текст джерелаSelman, Abbas M., Z. Hassan, M. Husham, and Naser M. Ahmed. "A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO2 nanorod array on p-Si(111)." Applied Surface Science 305 (June 2014): 445–52. http://dx.doi.org/10.1016/j.apsusc.2014.03.109.
Повний текст джерелаThanh Tung, Nguyen, Phuc Huu Dang, and Tran Le. "Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film." Science & Technology Development Journal - Engineering and Technology 2, no. 4 (February 28, 2020): 240–45. http://dx.doi.org/10.32508/stdjet.v2i4.604.
Повний текст джерелаRavikiran, L., N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh, and G. I. Ng. "Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy." Journal of Applied Physics 117, no. 2 (January 14, 2015): 025301. http://dx.doi.org/10.1063/1.4905620.
Повний текст джерелаŞakar, Betül Ceviz, Zeynep Orhan, Fatma Yıldırım, and Ş. Aydoğan. "Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device." Journal of Physics D: Applied Physics 55, no. 42 (August 22, 2022): 425107. http://dx.doi.org/10.1088/1361-6463/ac8081.
Повний текст джерелаMahowald, P. H., R. S. List, J. Woicik, P. Pianetta, and W. E. Spicer. "Si/InP(110) heterojunction." Physical Review B 34, no. 10 (November 15, 1986): 7069–75. http://dx.doi.org/10.1103/physrevb.34.7069.
Повний текст джерелаList, R. S., P. H. Mahowald, J. Woicik, and W. E. Spicer. "The Si/GaAs(110) heterojunction." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 3 (May 1986): 1391–95. http://dx.doi.org/10.1116/1.573577.
Повний текст джерелаLi, Lian Bi, and Zhi Ming Chen. "Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)." Materials Science Forum 858 (May 2016): 221–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.221.
Повний текст джерелаAbidri, B., J. P. Lacharme, M. Ghamnia, C. A. Sébenne, and M. Zerrouki. "Effect of Cu on InSe/Si(111) heterojunctions." European Physical Journal Applied Physics 8, no. 2 (September 1999): 153–58. http://dx.doi.org/10.1051/epjap:1999241.
Повний текст джерелаPan, Xujie, Jing He, Lei Gao, and Handong Li. "Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions." Nanomaterials 9, no. 12 (December 12, 2019): 1771. http://dx.doi.org/10.3390/nano9121771.
Повний текст джерелаШарофидинов, Ш. Ш., С. А. Кукушкин, М. В. Старицын, А. В. Солнышкин, О. Н. Сергеева, Е. Ю. Каптелов та И. П. Пронин. "Структура и свойства композитов на основе нитридов алюминия и галлия, выращенных на кремнии разной ориентации с буферным слоем карбида кремния". Физика твердого тела 64, № 5 (2022): 522. http://dx.doi.org/10.21883/ftt.2022.05.52331.250.
Повний текст джерелаISMAIL, RAID A., KHALID Z. YAHYA, and OMAR A. ABDULRAZAQ. "PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION." Surface Review and Letters 12, no. 02 (April 2005): 299–303. http://dx.doi.org/10.1142/s0218625x05007074.
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