Готові списки джерел за темами / Si (111) Heterojunction

Добірка наукової літератури з теми "Si (111) Heterojunction"

Автор: Grafiati

Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Si (111) Heterojunction"

Chao, Xiong, Chen Lei, and Yuan Hongchun. "Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction." Open Materials Science Journal 7, no. 1 (October 31, 2013): 29–32. http://dx.doi.org/10.2174/1874088x01307010029.

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The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.

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Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination. From current-voltage measurement at dark, the values of ideality factor are 2.9 and 3.8. The values of reverse saturation current are 3.77×10-7and 9.36×10-8Amperes.

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He, Xiao-Min, Zhi-Ming Chen, Lei Huang, and Lian-Bi Li. "First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction." Modern Physics Letters B 29, no. 29 (October 25, 2015): 1550182. http://dx.doi.org/10.1142/s0217984915501821.

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Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)/[Formula: see text]/6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)/[Formula: see text]/6H-SiC(0001) heterojunction are [Formula: see text]-[Formula: see text] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.

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Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa та Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, № 4 (4 липня 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.

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Xu, Bei, Changjun Zhu, Xiaomin He, Yuan Zang, Shenghuang Lin, Lianbi Li, Song Feng, and Qianqian Lei. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction." Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.

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First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction interface is lower than that of Ge(111)/4H-SiC(0001) interface, indicating that Ge(110)/4H-SiC(0001) interface is easier to form at relative low temperature. The interfacial bonding is analysed using partial density of states and total charge density distribution, and the results show that the bonding is contributed by the Ge-Si bonding.

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Xiong, Chao, An Cheng Xu, Xing Zhong Lu, Lei Chen, Xi Fang Zhu, and Ruo He Yao. "Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode." Key Engineering Materials 538 (January 2013): 324–27. http://dx.doi.org/10.4028/www.scientific.net/kem.538.324.

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The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

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Mahowald, P. H. "Heterojunction band discontinuity at the Si–Ge(111) interface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 4 (July 1985): 1252. http://dx.doi.org/10.1116/1.583050.

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González, M. L., F. Soria, and M. Alonso. "Initial stages of heterojunction formation: Si on GaAs(111)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (May 1990): 1977–82. http://dx.doi.org/10.1116/1.576791.

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Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang, and Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

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Abdul Majeed E.Ibrahim, Raid A. Isma'el, Enad S.Ibrahim, and Essam M.Ibrahim. "Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis." Tikrit Journal of Pure Science 21, no. 7 (February 8, 2023): 162–66. http://dx.doi.org/10.25130/tjps.v21i7.1123.

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In this work prepared ZnO/p-Si heterojunction by using spray pyrolysis method (CSP) from Zinc acetate solution (Zn(CH3COO)22H2O) on (111) oriented p-type silicon substrate with dimension (1cmx1cm) composed with (0.2M) at (350 Co), and studying The electrical properties of ZnO/p-Si heterojunction. (I-V) characteristic in dark and illumination, (C-V) characteristic and The built- in potential (Vbi) is calculated, while from I-V measurements, the ideality factor (β), the Rectification Factor(F) and (Iphoto/Idark) ratio are calculated.

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Більше джерел

Дисертації з теми "Si (111) Heterojunction"

Mohan, Lokesh. "III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4297.

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This thesis focuses on studying heterostructures of GaN, Silicon and AlN. GaN nanostructures are grown on bare Si (111) with and without a GaN buffer layer and GaN film was grown on an AlN layer. Apart from the material characterization of the grown samples we have studied the carrier transport across GaN/Si and AlN/Si heterojunctions by means of the I-V-T curves from these junctions and we also studied the band alignment across GaN/AlN and AlN/Si heterojunctions by means of X-ray photoelectron spectroscopy. The thesis is divided in 7 chapters. The first chapter deals with general introduction of the field, choice of the substrate, different growth techniques and an overview of nanostructures. In the second chapter different experimental techniques used in the current study are briefly mentioned. These techniques include Growth by Plasma Assisted Molecular Beam Epitaxy (PAMBE), X-Ray Diffraction (XRD), Raman spectroscopy, Photoluminescence spectroscopy, Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Then in the 3rd chapter the growth and characterization of GaN nanostructures on Silicon (111) is discussed. Attention has been paid to the effect of substrate temperature and V-III ratio on the morphology and optical quality of the grown structures when other growth parameters has been kept constant. However due to the complexity involved in forming proper electrical contacts from such rods and low yield of single nanowire-based devices, the need to grow compact nanorods was felt. Hence in the fourth chapter compact GaN nanorods were grown on n-Si with a buffer layer for improved quality and elimination of any possibility of electrical short with the substrate during metallization. The main focus in this chapter is the electrical characterization of GaN nanorods/Si (111) heterojunction. The temperature dependent current-voltage characteristics from GaN/n-Si (111) junctions are analyzed and explained as the result of a lateral inhomogeneity in barrier heights with Gaussian distribution and temperature dependent Gaussian parameters. The importance of AlN as a buffer layer for many III-Nitride based devices and as an active layer in many electromechanical devices drew our attention towards band off-set studies of the GaN/AlN/Si heterojunction and electrical transport across the AlN/n-Si junction, in 5th and 6th chapter respectively. The 5th chapter starts with the structural and optical characterization of AlN/Si (111) templates and overgrown GaN thin film. The rest of the 5th chapter is dedicated to the band off sets studies on GaN/AlN and AlN/Si (111) heterojunctions with X-ray photoelectron spectroscopy (XPS). A band diagram of GaN/AlN and AlN/Si is suggested based on our studies. In the 6th chapter, which happens to be the last work chapter, the temperature dependent electrical characterization of AlN/n-Si (111) heterojunction was carried out from 100K to 400K and the transport mechanism was explained with the help of the trap states at the interface. Finally, the thesis is concluded and insights for future work is presented in the seventh chapter.

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Lee, Eun Kyu. "Carrier transport in Ge nanowires and one dimensional Si/Ge heterojunctions." Thesis, 2004. http://library1.njit.edu/etd/fromwebvoyage.cfm?id=njit-etd2004-114.

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Частини книг з теми "Si (111) Heterojunction"

Ajmal Khan, M., and Yasuaki Ishikawa. "Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications." In Nanowires - Recent Progress. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97723.

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Stacking fault free and planar defects (twin plane) free catalyzed Si nanowires (Si NWs) is essential for the carrier transport in the nanoscale devices applications. In this chapter, In-catalyzed, vertically aligned and cone-shaped Si NWs arrays were grown by using vapor–liquid–solid (VLS) mode on Si (111) substrates. We have successfully controlled the verticality and (111)-orientation of Si NWs as well as scaled down the diameter to 18 nm. The density of Si NWs was also enhanced from 2.5 μm−2 to 70 μm−2. Such vertically aligned, (111)-oriented p-type Si NWs are very important for the nanoscale device applications including Si NWs/c-Si tandem solar cells and p-Si NWs/n-InGaZnO Heterojunction LEDs. Next, the influence of substrate growth temperature (TS), cooling rate (∆TS/∆𝑡) on the formation of planar defects, twining along [112] direction and stacking fault in Si NWs perpendicular to (111)-orientation were deeply investigated. Finally, one simple model was proposed to explain the formation of stacking fault, twining of planar defects in perpendicular direction to the axial growth direction of Si NWs. When the TS was decreased from 600°C with the cooling rate of 100°C/240 sec to room temperature (RT) after Si NWs growth then the twin planar defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed.

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Тези доповідей конференцій з теми "Si (111) Heterojunction"

Deng, Tianguo, Takuma Sato, Zhihao Xu, Ryota Takabe, Suguru Yachi, Yudai Yamashita, Kaoru Toko, and Takashi Suemasu. "Investigation of p-BaSi2/n-Si heterojunction solar cells on Si(001) and comparison to those on Si(111)." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547215.

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Rogers, David J., V. E. Sandana, F. Hosseini Teherani, M. Razeghi, and H. J. Drouhin. "Fabrication of nanostructured heterojunction LEDs using self-forming moth eye type arrays of n-ZnO nanocones grown on p-si (111)substrates by pulsed laser deposition." In SPIE OPTO: Integrated Optoelectronic Devices, edited by Ferechteh H. Teherani, Cole W. Litton, and David J. Rogers. SPIE, 2009. http://dx.doi.org/10.1117/12.817030.

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Mostafa, Tarek M., Motoki Takahara, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros, Aki Tominaga, Maiko Nishibori та Tsuyoshi Yoshitake. "Epitaxial growth of n-type β-FeSi2thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions". У International Conference and Summer School on Advanced Silicide Technology 2014. Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/jjapcp.3.011102.

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