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1
Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (September 30, 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.
Повний текст джерелаАнотація:
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and gallium nitride, are likely candidates to replace silicon in the near future for high power applications as silicon is fast approaching its performance limits. Wide-bandgap power semiconductor devices enable breakthrough circuit performance and energy efficiency gains in a wide range of potential applications. The U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E) has invested in WBG semiconductors over the past ten years targeting the barriers to widespread adoption of WBGs in power electronics including material and device development. Under ARPA-E projects, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of WBGs. This includes super-junction devices and light triggered photoconductive devices for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Advanced WBG device ideas are additionally being explored including 3D device structures, WBG integrated circuits, and neutron detectors The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
2
Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Повний текст джерелаАнотація:
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors are likely candidates to replace silicon-based semiconductors in the near future seeing as Silicon is fast approaching its performance limits for high power requirements. Wide-bandgap power semiconductor devices offer breakthrough circuit performance enabling low losses, high switching frequencies, and high temperature operation which will allow for enormous energy efficiency gains in a wide range of potential applications. In the past ten years, the U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E), which was established to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, has invested in WBG semiconductors including material and device-centric programs along with application specific programs targeting the barriers to widespread adoption in power electronics. Under these ARPA-E programs, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of the devices including the development of WBG super-junction devices. Light triggered photoconductive WBG devices are also being investigated for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Other WBG device ideas are also being explored under ARPA-E programs including WBG integrated circuits and neutron detectors. The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
3
Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Повний текст джерелаАнотація:
In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
4
Yater, J. E. "Secondary electron emission and vacuum electronics." Journal of Applied Physics 133, no. 5 (February 7, 2023): 050901. http://dx.doi.org/10.1063/5.0130972.
Повний текст джерелаАнотація:
Secondary electron emission serves as the foundation for a broad range of vacuum electronic devices and instrumentation, from particle detectors and multipliers to high-power amplifiers. While secondary yields of at least 3–4 are required in practical applications, the emitter stability can be compromised by surface dynamics during operation. As a result, the range of practical emitter materials is limited. The development of new emitter materials with high yield and robust operation would advance the state-of-the-art and enable new device concepts and applications. In this Perspective article, I first present an analysis of the secondary emission process, with an emphasis on the influence of material properties. From this analysis, ultra-wide bandgap (UWBG) semiconductors and oxides emerge as superior emitter candidates owing to exceptional surface and transport properties that enable a very high yield of low-energy electrons with narrow energy spread. Importantly, exciting advances are being made in the development of promising UWBG semiconductors such as diamond, cubic boron nitride (c-BN), and aluminum nitride (AlN), as well as UWBG oxides with improved conductivity and crystallinity. These advances are enabled by epitaxial growth techniques that provide control over the electronic properties critical to secondary electron emission, while advanced theoretical tools provide guidance to optimize these properties. Presently, H-terminated diamond offers the greatest opportunity because of its thermally stable negative electron affinity (NEA). In fact, an electron amplifier under development exploits the high yield from this NEA surface, while more robust NEA diamond surfaces are demonstrated with potential for high yields in a range of device applications. Although c-BN and AlN are less mature, they provide opportunities to design novel heterostructures that can enhance the yield further.
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Kouvetakis, J., Jose Menendez, and John Tolle. "Advanced Si-based Semiconductors for Energy and Photonic Applications." Solid State Phenomena 156-158 (October 2009): 77–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.77.
Повний текст джерелаАнотація:
Group-IV semiconductors, including alloys incorporating Sn, have been grown on dimensionally dissimilar Si substrates using novel molecular hydride chemistries with tunable reactivities that enable low temperature, CMOS compatible integration via engineering of the interface microstructure. Here we focus on properties of three such Ge-based systems including: (1) device quality Ge layers with thicknesses >5m possessing dislocation densities <105/cm2 are formed using molecular mixtures of Ge2H6 and highly reactive (GeH3)2CH2 organometallic additives circumventing the classical Stranski-Krastanov growth mechanism, (2) metastable GeSn alloys are grown on Si via reactions of Ge2H6 and SnD4, and (3) ternary SiGeSn analogs are produced lattice-matched to Ge-buffered Si using admixtures of SiGeH6, SiGe2H8, SnD4, Ge2H6, and Si3H8. Optical experiments and prototype device fabrication demonstrate that the ternary SiGeSn system represents the first group-IV alloy with a tunable electronic structure at fixed lattice constant, effectively decoupling band gap and strain and eliminating the most important limitation in device designs based on group-IV materials. Doping at levels higher than 1019 cm-3 (both p and n-type) is achieved for all the above semiconductor systems using a similar precursor chemistry approach. Electrical and infrared optical experiments demonstrate that doped GeSn and SiGeSn have mobilities that compare or exceed that of bulk Ge. The potential applications of these materials, including micro- and optoelectronics as well as photovoltaics and thermoelectricity, are discussed.
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He, Yashuo, Haotian Wan, Xiaoning Jiang, and Chang Peng. "Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications." Biosensors 13, no. 1 (December 29, 2022): 55. http://dx.doi.org/10.3390/bios13010055.
Повний текст джерелаАнотація:
The objective of this article is to review the recent advancement in piezoelectric micromachined ultrasound transducer (PMUT) technology and the associated piezoelectric materials, device fabrication and characterization, as well as applications. PMUT has been an active research topic since the late 1990s because of the ultrasound application needs of low cost large 2D arrays, and the promising progresses on piezoelectric thin films, semiconductors, and micro/nano-electromechanical system technology. However, the industrial and medical applications of PMUTs have not been very significant until the recent success of PMUT based fingerprint sensing, which inspired growing interests in PMUT research and development. In this paper, recent advances of piezoelectric materials for PMUTs are reviewed first by analyzing the material properties and their suitability for PMUTs. PMUT structures and the associated micromachining processes are next reviewed with a focus on the complementary metal oxide semiconductor compatibility. PMUT prototypes and their applications over the last decade are then summarized to show the development trend of PMUTs. Finally, the prospective future of PMUTs is discussed as well as the challenges on piezoelectric materials, micro/nanofabrication and device integration.
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Al-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters." CPSS Transactions on Power Electronics and Applications 7, no. 2 (June 30, 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.
Повний текст джерелаАнотація:
Semiconductor power devices are the major constituents of any power conversion system. These systems are faced by many circumscriptions due to the operating constraints of silicon (Si) based semiconductors under certain conditions. The emergence and persistence evolution of wide bandgap technology pledge to transcend the restrictions imposed by Si based semiconductors. This paper presents a thorough experimental study and assessment of the performance of three power devices: 1200 V SiC cascode, 1200 V SiC MOSFET, and 1200 V Si IGBT under the same hardware setup. The study aims to capture the major attributes for each power device toward determining their realistic potential applications. The switching performance of each power device is studied and reported. As the gate resistance is a crucial factor in a power device characterization, an extensive analysis of hard-switching losses under different separated turn-on and turn-off gate resistances is also performed and discussed. To appraise the fast switching capability, the switching dv/dts and di/dts are measured and analyzed for each power device. Furthermore, insights are provided about the dependency of switching energy losses on the power device current and blocking voltage. This paper also focuses on evaluating the operations and the performances of these power devices in a hard-switched dc-dc converter topology. While using of 1200 V SiC Schottky diode in the converter design with each power device, the high switching frequency operations and efficiency of the converter are reported and thoroughly explored. The SiC cascode exhibited superior performance when compared to the other two power devices. The results and analyses represent guidelines and prospects for designing advanced power conversion systems.
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Jiang, He, Jibiao Jin, Zijie Wang, Wuji Wang, Runfeng Chen, Ye Tao, Qin Xue, Chao Zheng, Guohua Xie, and Wei Huang. "Constructing Donor-Resonance-Donor Molecules for Acceptor-Free Bipolar Organic Semiconductors." Research 2021 (February 9, 2021): 1–10. http://dx.doi.org/10.34133/2021/9525802.
Повний текст джерелаАнотація:
Organic semiconductors with bipolar transporting character are highly attractive as they offer the possibility to achieve high optoelectronic performance in simple device structures. However, the continual efforts in preparing bipolar materials are focusing on donor-acceptor (D-A) architectures by introducing both electron-donating and electron-withdrawing units into one molecule in static molecular design principles. Here, we report a dynamic approach to construct bipolar materials using only electron-donating carbazoles connected by N-P=X resonance linkages in a donor-resonance-donor (D-r-D) structure. By facilitating the stimuli-responsive resonance variation, these D-r-D molecules exhibit extraordinary bipolar properties by positively charging one donor of carbazole in enantiotropic N+=P-X- canonical forms for electron transport without the involvement of any acceptors. With thus realized efficient and balanced charge transport, blue and deep-blue phosphorescent organic light emitting diodes hosted by these D-r-D molecules show high external quantum efficiencies up to 16.2% and 18.3% in vacuum-deposited and spin-coated devices, respectively. These results via the D-r-D molecular design strategy represent an important concept advance in constructing bipolar organic optoelectronic semiconductors dynamically for high-performance device applications.
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Oshima, Yuichi, та Elaheh Ahmadi. "Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications". Applied Physics Letters 121, № 26 (26 грудня 2022): 260501. http://dx.doi.org/10.1063/5.0126698.
Повний текст джерелаАнотація:
Ultra-wide-bandgap (UWBG) semiconductors, such as Ga2O3 and diamond, have been attracting increasing attention owing to their potential to realize high-performance power devices with high breakdown voltage and low on-resistance beyond those of SiC and GaN. Among numerous UWBG semiconductors, this work focuses on the corundum-structured α-Ga2O3, which is a metastable polymorph of Ga2O3. The large bandgap energy of 5.3 eV, a large degree of freedom in band engineering, and availability of isomorphic p-type oxides to form a hetero p–n junction make α-Ga2O3 an attractive candidate for power device applications. Promising preliminary prototype device structures have been demonstrated without advanced edge termination despite the high dislocation density in the epilayers owing to the absence of native substrates and lattice-matched foreign substrates. In this Perspective, we present an overview of the research and development of α-Ga2O3 for power device applications and discuss future research directions.
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Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.
Повний текст джерелаАнотація:
Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. ARPA-E’s SWITCHES program, started in 2014, set out to catalyze the development of vertical GaN devices using innovations in materials and device architectures to achieve three key aggressive targets: 1200V breakdown voltage (BV), 100A single-die diode and transistor current, and a packaged device cost of no more than ȼ10/A. The program is drawing to a close by the end of 2017 and while no individual project has yet to achieve all the targets of the program, they have made tremendous advances and technical breakthroughs in vertical device architecture and materials development. GaN crystals have been grown by the ammonothermal technique and 2-inch GaN wafers have been fabricated from them. Near theoretical, high-voltage (1700-4000V) and high current (up to 400A pulsed) vertical GaN diodes have been demonstrated along with innovative vertical GaN transistor structures capable of high voltage (800-1500V) and low RON (0.36-2.6 mΩ-cm2). The challenge of selective area doping, needed in order to move to higher voltage transistor devices has been identified. Furthermore, a roadmap has been developed that will allow high voltage/current vertical GaN devices to reach ȼ5/A to ȼ7/A, realizing functional cost parity with high voltage silicon power transistors.
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Kim, Hanul, Inayat Uddin, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang, and Gil-Ho Kim. "Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping." Nanomaterials 13, no. 10 (May 22, 2023): 1700. http://dx.doi.org/10.3390/nano13101700.
Повний текст джерелаАнотація:
A two-dimensional (2D) atomic crystalline transition metal dichalcogenides has shown immense features, aiming for future nanoelectronic devices comparable to conventional silicon (Si). 2D molybdenum ditelluride (MoTe2) has a small bandgap, appears close to that of Si, and is more favorable than other typical 2D semiconductors. In this study, we demonstrate laser-induced p-type doping in a selective region of n-type semiconducting MoTe2 field effect transistors (FET) with an advance in using the hexagonal boron nitride as passivation layer from protecting the structure phase change from laser doping. A single nanoflake MoTe2-based FET, exhibiting initial n-type and converting to p-type in clear four-step doping, changing charge transport behavior in a selective surface region by laser doping. The device shows high electron mobility of about 23.4 cm2V−1s−1 in an intrinsic n-type channel and hole mobility of about 0.61 cm2V−1s−1 with a high on/off ratio. The device was measured in the range of temperature 77–300 K to observe the consistency of the MoTe2-based FET in intrinsic and laser-dopped region. In addition, we measured the device as a complementary metal–oxide–semiconductor (CMOS) inverter by switching the charge-carrier polarity of the MoTe2 FET. This fabrication process of selective laser doping can potentially be used for larger-scale MoTe2 CMOS circuit applications.
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Peterson, Brennan, Michael Kwan, Fred Duewer, Andrew Reid, and Rhiannon Brooks. "Optimizing X-Ray Inspection for Advanced Packaging Applications." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000165–68. http://dx.doi.org/10.4071/2380-4505-2020.1.000165.
Повний текст джерелаАнотація:
ABSTRACT Over the coming decade, advanced packaging will become increasingly critical to performance, cost, and density improvements in advanced electronics. There is both an industry push: cost and performance advances in transistor scaling are increasingly difficult. And there is an industry pull: customization for each market can be done far more quickly by assembling a series of parts in a package, rather than by design and integration into a single device. This isnt a new idea: Gordon Moore said the same in the 60’s. But after decades of increased device level integration, it is an important change. Figure 1 shows an example (future) device: there are large bumps, hybrid bonds--for extreme bandwidth and low latency connection to cache memory, TSV based DRAM, and multiple CPU to CPU interconnects. Each of these is a failure point. Figure 1: The wide variety of interconnects on future advanced packages Figure 2: the triangle of misery as applied to standard and Advanced xray imaging (AXI) Manufacturing will necessarily advance in the packaging arena: pin density and package size will both increase to support the high bandwidth and device integration demands. The downside of multiple device integration is a higher set of requirements on the reliability of both the individual devices and the fully assembled system. This is an opportunity to take advantage of new strategies and technologies in package inspection. The sampling challenges for both control and inspection for high reliability require systems that can run at 100% coverage and millions of units per year. An overview of reliability sampling challenges as it relates to the end of line inspection, as well as sampling for both defect type and incidence is critical to understanding how and what to measure to maximize yield. There are fundamental tradeoffs between speed, resolution, and signal to noise ratio that inform a systematic engineering understanding of inspection. Optimizing that trade-off specifically for semiconductor inspection leads to dedicated tools with extremely high resolution, speed, and low dose. In parallel with the speed requirements, sensitivity, and noise immunity can be improved with an understanding of the systematic sources of noise. These can be mitigated and even eliminated with novel algorithms for both image enhancement and defect location.
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Medjdoub, Farid. "Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications." Micromachines 12, no. 1 (January 15, 2021): 83. http://dx.doi.org/10.3390/mi12010083.
Повний текст джерелаАнотація:
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...]
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Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors." Materials 12, no. 12 (June 19, 2019): 1972. http://dx.doi.org/10.3390/ma12121972.
Повний текст джерелаАнотація:
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.
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Syed Ahsan Ali Shah, Ahsanali. "Overview of Power Electronic Devices & its Application Specifically Wide Band Gap and GaN HEMTs." International Journal of Sciences and Emerging Technologies 1, no. 1 (August 5, 2022): 39–49. http://dx.doi.org/10.56536/ijset.v1i1.21.
Повний текст джерелаАнотація:
The review paper presents a prologue of power electronics devices and its industrial applications including wide band gap semiconductor devices in range of 600V to 1700V and latest evaluation of Gallium Nitride High Electron Mobility Transistor technology (GaN HEMT) in range of 30V to 650V with applications. The study emphasizes advance power electronic applications in renewable energy system, smart grid power system, power saving, electric vehicles and energy storage system. Similarly, comparison of latest WBG semiconductors as SiC, SiC JFETs, SJ MOSFETs and GaN-HEMTs discussed in terms of different parameters e.g static losses, dynamic losses and temperature impact, thus further signify latest GaN technology evolution and its related challenges with detailed static as well as dynamic characterization. This paper demonstrates all types of electronics devices in power sector and its practical usage mentioned in detail, it includes tradeoff between different WBG devices and also explain GaN functions and applications in various circuits of high efficiency and density.
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Hasegawa, Hideki, Hajime Fujikura, and Hiroshi Okada. "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires." MRS Bulletin 24, no. 8 (August 1999): 25–30. http://dx.doi.org/10.1557/s0883769400052866.
Повний текст джерелаАнотація:
A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the “roadmap” for the Si ultralarge-scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010. GaAs- and InP-based heterostructure devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have made remarkable progress by miniaturization, realizing ultrahigh speeds approaching the THz range with ultralow power consumption. Due to progress in nanofabrication technology, feature sizes of scaled-down transistors are rapidly approaching the Fermi wavelength of electrons in semiconductors, even at the production level. This fact may raise some concerns about the operation of present-day devices based on semiclassical principles.However, the progress of nanofabrication technology has opened up the exciting possibility of constructing novel quantum devices, based directly on quantum mechanics, by utilizing artificial structures such as quantum wells, wires, and dots. In these structures, new physical effects appear, such as the formation of new quantum states in single and coupled quantum structures, artificial miniband formation in superlattices, tunneling and resonant tunneling in single and multiple barriers, propagation of phase-coherent guided electron waves in quantum wires, conductance oscillations in small tunnel junctions due to single-electron tunneling, and so on. We expect that these effects will offer rich functionality in next-generation semiconductor quantum ULSIs based on artificial quantum structures, with feature sizes in the range of one to a few tens of nanometers. Beyond this, molecular-level ULSIs using exotic materials and various chemical and electrochemical processes other than the standard semiconductor ones may appear, butat present, they still seem to be too far in the future for realistic consideration for industrial applications.
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Pan, James, Shamima Afroz, Scott Suko, James D. Oliver, and Thomas Knight. "High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide." Materials Science Forum 924 (June 2018): 641–44. http://dx.doi.org/10.4028/www.scientific.net/msf.924.641.
Повний текст джерелаАнотація:
Wide bandgap semiconductors, such as 4H SiC, are suitable for power regulating devices, due to compatibility with conventional process integration, high breakdown voltage and thermal conductivity [1]. For RF applications, in order to achieve better switching speed, high cut off frequency, and low series resistance (Rdson), it is essential to choose the right gate metals [2]. Engineering of the gate metals not only improves the critical device parameters by adjustment of the metal workfunction, but also affects how the high aspect ratio trenches are filled for a next generation SIT device configuration [3] - [5].
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Jiang, Sai, Qinyong Dai, Jianhang Guo, and Yun Li. "In-situ/operando characterization techniques for organic semiconductors and devices." Journal of Semiconductors 43, no. 4 (April 1, 2022): 041101. http://dx.doi.org/10.1088/1674-4926/43/4/041101.
Повний текст джерелаАнотація:
Abstract The increasing demands of multifunctional organic electronics require advanced organic semiconducting materials to be developed and significant improvements to be made to device performance. Thus, it is necessary to gain an in-depth understanding of the film growth process, electronic states, and dynamic structure-property relationship under realistic operation conditions, which can be obtained by in-situ/operando characterization techniques for organic devices. Here, the up-to-date developments in the in-situ/operando optical, scanning probe microscopy, and spectroscopy techniques that are employed for studies of film morphological evolution, crystal structures, semiconductor-electrolyte interface properties, and charge carrier dynamics are described and summarized. These advanced technologies leverage the traditional static characterizations into an in-situ and interactive manipulation of organic semiconducting films and devices without sacrificing the resolution, which facilitates the exploration of the intrinsic structure-property relationship of organic materials and the optimization of organic devices for advanced applications.
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Zhang, Yu-Xin, Chien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, Ni Xu, and Kai-Chien Tsai. "Effects of P-Type SnOx Thin-Film Transistors with N2 and O2 Ambient Furnace Annealing." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4069–72. http://dx.doi.org/10.1166/jnn.2020.17554.
Повний текст джерелаАнотація:
Recently oxide-based thin-film transistors (TFTs) are investigated for emerging applications of the next generation display devices and other electronic circuits (Fortunato, E., et al., 2012. Oxide semiconductor thin-film transistors: A review of recent advances. Advanced Materials, 24, pp.2945–2986). Despite of the great success in n-type oxide semiconductors with high transparency and high field-effect mobility, high performance P-type oxide TFTs are so highly desired that complementary circuits can be realized with low power and high performance (Ou, W.C., et al., 2008. Anomalous P-channel amorphous oxide transistors based on tin oxide and their complementary circuits. Applied Physics Letters, 92, p.122113). There are some oxides such as SnO, CuO, Cu2O and NiO are regarded as promising P-type semiconductor materials. In this investigation, tin oxide SnOx is fabricated to be active layer for TFTs device, and furnace annealing with several combinations of nitrogen and oxygen ambient is compared to enhance the electrical characteristics of P-type SnOx TFTs (Park, K.S., et al., 2009. High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability. Electrochemical and Solid-State Lett., 12, pp.H256–H258). The results show that with N2+O2 ambient, 30 minutes furnace annealing, the P-type SnOx TFTs device shows better performance with mobility (μFE) 0.883 cm2/V · S, threshold voltage (VT) −4.63 V, subthreshold swing (SS) 1.15 V/decade, and Ion/Ioff ratio 1.01×103.
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Majety, Sridhar, Pranta Saha, Victoria A. Norman, and Marina Radulaski. "Quantum information processing with integrated silicon carbide photonics." Journal of Applied Physics 131, no. 13 (April 7, 2022): 130901. http://dx.doi.org/10.1063/5.0077045.
Повний текст джерелаАнотація:
Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.
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Yuan, Chao, Riley Hanus, and Samuel Graham. "A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures." Journal of Applied Physics 132, no. 22 (December 14, 2022): 220701. http://dx.doi.org/10.1063/5.0122200.
Повний текст джерелаАнотація:
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and versatile tools for the characterization of wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductor thermal transport properties and device temperatures, respectively. This Review begins with the basic principles and standard implementations of pump–probe TR and TTI techniques, illustrating that when analyzing WBG and UWBG materials or devices with pump–probe TR or TTI, a metal thin-film layer is often required. Due to the transparency of the semiconductor layers to light sources with sub-bandgap energies, these measurements directly on semiconductors with bandgaps larger than 3 eV remain challenging. This Review then summarizes the general applications of pump–probe TR and TTI techniques for characterizing WBG and UWBG materials and devices where thin metals are utilized, followed by introducing more advanced approaches to conventional pump–probe TR and TTI methods, which achieve the direct characterizations of thermal properties on GaN-based materials and the channel temperature on GaN-based devices without the use of thin-film metals. Discussions on these techniques show that they provide more accurate results and rapid feedback and would ideally be used as a monitoring tool during manufacturing. Finally, this Review concludes with a summary that discusses the current limitations and proposes some directions for future development.
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Ren, Shiwei, and Abderrahim Yassar. "Recent Research Progress in Indophenine-Based-Functional Materials: Design, Synthesis, and Optoelectronic Applications." Materials 16, no. 6 (March 20, 2023): 2474. http://dx.doi.org/10.3390/ma16062474.
Повний текст джерелаАнотація:
This review highlights selected examples, published in the last three to four years, of recent advance in the design, synthesis, properties, and device performance of quinoidal π-conjugated materials. A particular emphasis is placed on emerging materials, such as indophenine dyes that have the potential to enable high-performance devices. We specifically discuss the recent advances and design guidelines of π-conjugated quinoidal molecules from a chemical standpoint. To the best of the authors’ knowledge, this review is the first compilation of literature on indophenine-based semiconducting materials covering their scope, limitations, and applications. In the first section, we briefly introduce some of the organic electronic devices that are the basic building blocks for certain applications involving organic semiconductors (OSCs). We introduce the definition of key performance parameters of three organic devices: organic field effect transistors (OFET), organic photovoltaics (OPV), and organic thermoelectric generators (TE). In section two, we review recent progress towards the synthesis of quinoidal semiconducting materials. Our focus will be on indophenine family that has never been reviewed. We discuss the relationship between structural properties and energy levels in this family of molecules. The last section reports the effect of structural modifications on the performance of devices: OFET, OPV and TE. In this review, we provide a general insight into the association between the molecular structure and electronic properties in quinoidal materials, encompassing both small molecules and polymers. We also believe that this review offers benefits to the organic electronics and photovoltaic communities, by shedding light on current trends in the synthesis and progression of promising novel building blocks. This can provide guidance for synthesizing new generations of quinoidal or diradical materials with tunable optoelectronic properties and more outstanding charge carrier mobility.
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Zhao, Dong, Zhelin Lin, Wenqi Zhu, Henri J. Lezec, Ting Xu, Amit Agrawal, Cheng Zhang, and Kun Huang. "Recent advances in ultraviolet nanophotonics: from plasmonics and metamaterials to metasurfaces." Nanophotonics 10, no. 9 (May 24, 2021): 2283–308. http://dx.doi.org/10.1515/nanoph-2021-0083.
Повний текст джерелаАнотація:
Abstract Nanophotonic devices, composed of metals, dielectrics, or semiconductors, enable precise and high-spatial-resolution manipulation of electromagnetic waves by leveraging diverse light–matter interaction mechanisms at subwavelength length scales. Their compact size, light weight, versatile functionality and unprecedented performance are rapidly revolutionizing how optical devices and systems are constructed across the infrared, visible, and ultraviolet spectra. Here, we review recent advances and future opportunities of nanophotonic elements operating in the ultraviolet spectral region, which include plasmonic devices, optical metamaterials, and optical metasurfaces. We discuss their working principles, material platforms, fabrication, and characterization techniques, followed by representative device applications across various interdisciplinary areas such as imaging, sensing and spectroscopy. We conclude this review by elaborating on future opportunities and challenges for ultraviolet nanophotonic devices.
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Simon, John, Kevin Schulte, Kelsey Horowitz, Timothy Remo, David Young, and Aaron Ptak. "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy." Crystals 9, no. 1 (December 20, 2018): 3. http://dx.doi.org/10.3390/cryst9010003.
Повний текст джерелаАнотація:
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.
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Hung, Yu-Hsin. "Improved Ensemble-Learning Algorithm for Predictive Maintenance in the Manufacturing Process." Applied Sciences 11, no. 15 (July 25, 2021): 6832. http://dx.doi.org/10.3390/app11156832.
Повний текст джерелаАнотація:
Industrial Internet of Things (IIoT) technologies comprise sensors, devices, networks, and applications from the edge to the cloud. Recent advances in data communication and application using IIoT have streamlined predictive maintenance (PdM) for equipment maintenance and quality management in manufacturing processes. PdM is useful in fields such as device, facility, and total quality management. PdM based on cloud or edge computing has revolutionized smart manufacturing processes. To address quality management problems, herein, we develop a new calculation method that improves ensemble-learning algorithms with adaptive learning to make a boosted decision tree more intelligent. The algorithm predicts main PdM issues, such as product failure or unqualified manufacturing equipment, in advance, thus improving the machine-learning performance. Herein, semiconductor and blister packing machine data are used separately in manufacturing data analytics. The former data help in predicting yield failure in a semiconductor manufacturing process. The blister packing machine data are used to predict the product packaging quality. Experimental results indicate that the proposed method is accurate, with an area under a receiver operating characteristic curve exceeding 96%. Thus, the proposed method provides a practical approach for PDM in semiconductor manufacturing processes and blister packing machines.
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Huff, Michael. "Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication." Micromachines 12, no. 8 (August 20, 2021): 991. http://dx.doi.org/10.3390/mi12080991.
Повний текст джерелаАнотація:
This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.
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Stabach, Jennifer, Zach Cole, Chad B. O'Neal, Brice McPherson, Robert Shaw, and Brandon Passmore. "A High Performance Power Package for Wide Bandgap Semiconductors Using Novel Wire Bondless Power Interconnections." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000353–58. http://dx.doi.org/10.4071/isom-2015-wp16.
Повний текст джерелаАнотація:
Silicon carbide (SiC) wide bandgap semiconductor power device technologies offer improved electrical and thermal performance over silicon in high performance power electronic applications, such as hybrid or fully electric vehicles, aerospace, solar inverters, and advanced military systems. However, current packaging limitations make it difficult to operate these devices to their full potential. One such limitation includes die interconnections, which are traditionally made using large diameter aluminum wire bonds. This discussion introduces an innovative wire bondless interconnect technique for power packaging called PowerStep. This approach includes a precision etched metal tab with raised regions matching the size and location of device terminals and trenches to accommodate critical features on devices such as passivated surfaces. The tab offers a low profile, low inductance, low resistance, high electrical and thermal conductivity, and mechanically rugged interconnection solution. PowerStep has been implemented to facilitate a single-step interconnection method for a 600 to 1700 V SiC electronics package, replacing wire bonds which are connected one at a time. In addition, a key element of this package is the absence of a baseplate, resulting in lower weight, volume, and cost, as well as reduced manufacturing complexity. The electrical, thermal, and mechanical characteristics of PowerStep interconnections are analyzed and compared to conventional aluminum wire bonds to demonstrate the advantages of wire bondless interconnections coupled with wide bandgap devices. The low parasitics and junction-to-case thermal resistance of the package combined with PowerStep interconnects capture the high performance of SiC for power applications.
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Deitz, Julia, Timothy Ruggles, Stephen Lee, Andrew A. Allerman, C. Barry Carter, and Joseph Michael. "(Invited) Electron Channeling Contrast Imaging for Rapid Characterization of Compound Semiconductors." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1254. http://dx.doi.org/10.1149/ma2022-02341254mtgabs.
Повний текст джерелаАнотація:
As compound semiconductor devices become more advanced, their ultimate performance becomes increasingly dependent on nano to micro scale structural defects in their constituent materials. These defects, such as dislocations, stacking faults, and anti-phase boundaries often act as recombination centers in devices, limiting efficiency. Characterization of these defects – their type (such as edge vs. screw vs. mixed dislocations), their relative densities, how they interact with other defects, what growth conditions are more or less likely to propagate them, how they relate to device efficiencies and performance, etc. – is vital to mitigate their negative effects and even sometimes exploit their potential benefits depending on the desired application. In this contribution, we will discuss the use of electron channeling contrast imaging (ECCI) as an ideal characterization method for compound semiconductors and devices as well as some recent applications which include ECCI characterization in tandem with other characterization methods for a broader material understanding. Transmission electron microscopy (TEM) is a widely used technique for characterizing extended defects and local crystal orientation. However, TEM analysis usually entails thinning a sample via focused ion beam milling or chemical/mechanical polishing to around 50-100 nm, which is time consuming and only allows a relatively small area of the sample to be characterized. These drawbacks can cause bottlenecks in research progress and even render TEM impractical for certain applications. ECCI performed in a scanning electron microscope (SEM) can bypass these issues as it requires little to no sample preparation. This means ECCI can easily characterize over large areas in a fraction of the time as TEM analysis. [1-3] These benefits mean that ECCI gives more accurate analysis by not missing larger trends that can be missed with the small samples in TEM as well as by not introducing artifacts from the sample preparation. Here we highlight applications of ECCI for characterization of two very different compound semiconductors of growing importance -- Cd3As2 and GaN. Firstly, we consider Cd3As2 thin films of use as topological quantum materials, where the Cd3As2 can be either a compound semiconductor or topological Dirac semimetal, depending on the structural phase or mode of use. The ECCI of MOCVD-grown Cd3As2 shown in this work finds that the developmental thin films are not completely single crystalline. [4] Moreover, two different spatial scales of domain formation are seen. At lower magnification, we see roughly circular-shaped larger domains that are ~ 2-5 mm in diameter. Some of these domains are more prominently defined and feature single dark spots at their center, which at first suggests threading dislocations, but turns out to be occasional defect-pits formed in concert with numerous, indistinct threads. At higher magnification, we see much smaller dot-like or speck-like domains that are ~ 100 nm or less in diameter. The wide-area electron channeling patterns used to orient the sample for the ECCI imaging were visible, but rather indistinctly resolved, which is consistent with small crystallographic misorientations of the ensemble of domains composing the film. Secondly, we consider bulk GaN wafers entering use in a wide variety of functional applications, including GaN high-voltage diodes for power electronics. We will show novel “star” defects appearing in the GaN substrates when characterized by both ECCI and high-resolution electron backscattered diffraction (EBSD). [5] Through a more complete structural understanding of these star defects, we seek to improve understanding of the impact of these defects on device performance, which may in turn facilitate development of strategies for their mitigation or removal. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
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Fu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Повний текст джерелаАнотація:
Due to their large bandgap, high critical electric field, and availability of high-quality large-size melt-grown bulk substrates, III-oxides including Ga2O3, Al2O3, In2O3, and their alloys have been extensively investigated for a myriad of electronic and optoelectronic applications. Recently, β-Ga2O3 based power electronics, RF transistors, and ultraviolet (UV) photodetectors have been demonstrated with promising performance. However, p-type β-Ga2O3 is still elusive due to high dopant activation energy (>1 eV), large hole effective mass, and hole trapping. This significantly limits the design freedom for β-Ga2O3 devices. Other p-type semiconductors have been proposed to form heterostructures with β-Ga2O3 such as p-NiO, p-Cu2O, and p-type III-nitrides. As popular wide bandgap semiconductors, III-nitrides are promising candidates to form III-oxide/III-nitride heterostructures to enable advanced device structures and new functionalities. Furthermore, III-oxides and III-nitrides can be epitaxially grown on each other with small lattice mismatch (< 5% for GaN and β-Ga2O3) by the industrial standard epitaxial method MOCVD. For example, vertical GaN violet LEDs grown on n-type β-Ga2O3 substrates have been reported. This talk will present our recent work on III-oxide/III-nitride heterostructures in power electronics and optoelectronics. For power electronics, β-Ga2O3/GaN p-n heterojunctions will first be discussed. The heterojunction via mechanical exfoliation shows decent forward rectifying behaviors and thermal stability up to 200 °C but relatively low breakdown voltages (BV). To improve the breakdown capability, we carried out a comprehensive TCAD simulation study to design mesa edge termination for kV-class β-Ga2O3/GaN p-n heterojunctions. It was found that the electric field crowding effect is the main reason for the low BV. Several mesa edge termination structures were investigated such as deeply-etched mesa, step mesa, and p-GaN guard ring. Second, normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping will be discussed. A large two-dimensional electron gas is formed at the AlN/β-Ga2O3 interface due to polarization effects, and p-GaN gate is used to realize tunable positive threshold voltage. The device transfer and output characteristics with different device structures are also studied. For optoelectronics applications, self-powered spectrally distinctive Ga2O3/GaN heterojunction UV photodetectors grown by MOCVD will be discussed. Opposite current polarities are observed under different illumination wavelengths due to different carrier transports, which can be utilized to distinguish different spectra. These results indicate that (ultra)wide bandgap III-oxide/III-nitride heterostructures are a promising platform to enable new device structures and functionalities.
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Wu, Yuanpeng, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis, and Zetian Mi. "Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications." Applied Physics Letters 122, no. 16 (April 17, 2023): 160501. http://dx.doi.org/10.1063/5.0145931.
Повний текст джерелаАнотація:
Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored via heterostructure stacking, TMD technology is currently limited by the incompatibility with existing industrial processes. Conversely, III-nitrides have been widely used in light-emitting devices and power electronics but not leveraging excitonic quantum aspects. Recent demonstrations of 2D III-nitrides have introduced exciton binding energies rivaling TMDs, promising the possibility to achieve room-temperature quantum technologies also with III-nitrides. Here, we discuss recent advancements in the synthesis and characterizations of 2D III-nitrides with a focus on 2D free-standing structures and embedded ultrathin quantum wells. We overview the main obstacles in the material synthesis, vital solutions, and the exquisite optical properties of 2D III-nitrides that enable excitonic and quantum-light emitters.
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Convertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, and Lukas Czornomaz. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities." Materials 12, no. 1 (December 27, 2018): 87. http://dx.doi.org/10.3390/ma12010087.
Повний текст джерелаАнотація:
III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n+ InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 µA/µm and subthreshold slope of about 85 mV/dec.
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Berberich, Stefan, A. Goñi, Wolfgang Schäper, and Manfred Kolm. "Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications." Materials Science Forum 615-617 (March 2009): 919–24. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.919.
Повний текст джерелаАнотація:
Of all the wide bandgap semiconductors, SiC is currently the most attractive material for aerospace applications. It offers significant advantages at high temperatures and high voltage levels while benefiting from an excellent thermal conductivity, the resistance to a harsh radiation environment (in particular in medium low orbits (MEO) where the Van Allan belts show a high concentration of electron and proton radiation) and an advanced materials technology. Due to the significant progress in the last years in monocrystalline SiC material fabrication and process technology, the space industry is increasingly interested in exploiting the SiC characteristics for electronic application. Although the requirement for space components are highly demanding with space qualified technological processes required, it is expected that high quality commercial SiC components submitted to a stringent screening process will allow the realisation of highly reliable space components. Electronic applications of monocrystalline SiC for space mainly exploit the high breakdown electric field which allows for lower specific on-resistances due to high doping and thinner drift region layers in vertical SiC power device structures. Among all SiC power devices, high voltage rectifiers have reached the highest degree of maturity. EADS Astrium has started evaluation activities of commercially available 1200 V SiC diodes and also 4.5 kV diodes developed in the frame of the ESA CHPCA (components for high power conditioning application) project. One application is power supply of ion thrusters on satellites which require electric power in the range of 2 to 8 kW at voltages of 1 to 2 kV. Mechanical aerospace applications of polycrystalline SiC
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Posthill, J. B., D. P. Malta, R. Pickett, M. L. Timmons, T. P. Humphreys, and R. J. Markunas. "Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 838–39. http://dx.doi.org/10.1017/s0424820100171924.
Повний текст джерелаАнотація:
Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.
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Kareem, Awaz Adil, Mohammed Kadhim Jaqsi, and Issa Mahdi Aziz. "Formulating nanocomposite materials based on polymers to get high performance and extra properties." Technium Sustainability 3 (May 8, 2023): 41–53. http://dx.doi.org/10.47577/sustainability.v3i.8880.
Повний текст джерелаАнотація:
Nowadays, production nanocomposites based on polymer by blending nanoparticles as a filler with a polymer-matrix had attracted the major concentration of researchers, these materials used now for several modern application and in multiple fields (semiconductors, sensors, photovoltaic cells, optics, electronic-device,…). So it should be concentrated on comprehensive the relation between the polymer-matrix and the nano-particle to achieve more advance in this field. In this paper, the effect of adding SiO2 to PVP/PEO matrix by concentrations are investigated. The optical and thermal properties are evaluated. The properties of the studied films presented the new additions and specifications produced by this process. Briefly, results had shown enhancing in the absorbance, melting-temperature is increased. Additionally, the crystallinity degree of the nanocomposites is examined.
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Grzybowski, R. R., and B. Gingrich. "High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications." Journal of Engineering for Gas Turbines and Power 121, no. 4 (October 1, 1999): 622–28. http://dx.doi.org/10.1115/1.2818517.
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Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging, and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics, and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye towards the conception and implementation of reliable and affordable high temperature systems.
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Jiang, Chen. "All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights." Crystals 10, no. 9 (August 20, 2020): 727. http://dx.doi.org/10.3390/cryst10090727.
Повний текст джерелаАнотація:
Printable organic thin-film transistors have enabled flexible low-cost electronics, which has the potential for a lot of emerging electronic applications. Despite the excellent dark performance of advanced all-inkjet printed organic thin-film transistors, their photoresponse is less explored and needs to be investigated, especially photoresponse to visible lights that human beings can see and are most familiar with. Importantly, for electronics integration, both devices with and without photo-sensitivity to visible light are important, for photo-detecting and signal processing, respectively. In this study, two organic semiconductor materials are used in all-inkjet printed organic thin-film transistors, namely 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene). By characterizing devices under optical exposure with wavelengths from 400 to 800 nm, photocurrents and threshold voltage shifts of the devices are extracted. The fabricated C8-BTBT organic thin-film transistors do not exhibit noticeable photo-sensitivity to visible light, whereas the TIPS-pentacene devices demonstrate significant photoresponse to visible lights, with photocurrents in nano- to micro-ampere levels and threshold voltage shifts of hundreds of millivolts to several volts depending on the photon energy of lights under the same intensity. The TIPS-pentacene devices demonstrated reproducible characteristics before and after light exposure. In addition, the responsivity and sensitivity of the devices were characterized with a decent responsivity of 55.9 mA/W. The photoresponse mechanisms are explained with ultraviolet–visible (UV–vis) adsorption spectroscopy measurements and extracted optical bandgaps of the two semiconductors. This study shows both printed organic transistors with and without photo-sensitivity can be fabricated with the same device structure and fabrication process at low cost, which opens the new possibility of using printed organic thin-film transistors for integrated optoelectronic applications.
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Kar, Shaoni, Nur Fadilah Jamaludin, Natalia Yantara, Subodh G. Mhaisalkar, and Wei Lin Leong. "Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes." Nanophotonics 10, no. 8 (June 1, 2020): 2103–43. http://dx.doi.org/10.1515/nanoph-2021-0033.
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Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.
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Hu, Yuze, Mingyu Tong, Siyang Hu, Weibao He, Xiang’ai Cheng, and Tian Jiang. "Multidimensional engineered metasurface for ultrafast terahertz switching at frequency-agile channels." Nanophotonics 11, no. 7 (February 22, 2022): 1367–78. http://dx.doi.org/10.1515/nanoph-2021-0774.
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Abstract The ability to actively manipulate free-space optical signals by using tunable metasurfaces is extremely appealing for many device applications. However, integrating photoactive semiconductors into terahertz metamaterials still suffers from a limited functionality. The ultrafast switching in picosecond timescale can only be operated at a single frequency channel. In the hybrid metasurface proposed here, we experimentally demonstrate a dual-optically tunable metaphotonic device for ultrafast terahertz switching at frequency-agile channels. Picosecond ultrafast photoswitching with a 100% modulation depth is realized at a controllable operational frequency of either 0.55 THz or 0.86 THz. The broadband frequency agility and ultrafast amplitude modulation are independently controlled by continuous wave light and femtosecond laser pulse, respectively. The frequency-selective, temporally tunable, and multidimensionally-driven features can empower active metamaterials in advanced multiplexing of information, dual-channel wireless communication, and several other related fields.
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Pandey, R. K., H. Stern, W. J. Geerts, P. Padmini, P. Kale, Jian Dou, and R. Schad. "Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices." Advances in Science and Technology 54 (September 2008): 216–22. http://dx.doi.org/10.4028/www.scientific.net/ast.54.216.
Повний текст джерелаАнотація:
The phenomenal growths of information technology and related fields have warranted the development of new class of materials. Multifunctional oxides, magnetic-semiconductors, multiferroics and smart materials are just a few examples of such materials. They are needed for the development of novel technologies such as spintronics, magneto-electronics, radhard electronics, and advanced microelectronics. For these technologies, of particular interest are some solid solutions of ilmenite-hematite (IH) represented by (1-x) FeTiO3.xFe2O3 where x varies from 0 to 1; Mn-doped ilmenite (Mn+3-FeTiO3) and Mn-doped pseudobrookite, Mn+3-Fe2TiO5 (PsB). These multifunctional oxides are ferromagnetic with the magnetic Curie points well above the room temperature as well as wide bandgap semiconductors with band gap Eg > 2.5 eV. This paper outlines: (a) processing of device quality samples for structural, electrical and magnetic characterization, (b) fabrication and evaluation of an integrated structure for controlled magnetic switching, and (c) the response of the two terminal non-linear current-voltage (I-V) characteristics when biased by a dc voltage. Subsequently, we will identify a few microelectronic applications based on this class of oxides.
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Zhang, Jiawei, Josh Wilson, and Aimin Song. "(Invited, Digital Presentation) Oxide TFTs Based on Semiconductors and Semimetals." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1263. http://dx.doi.org/10.1149/ma2022-02351263mtgabs.
Повний текст джерелаАнотація:
Oxide semiconductors have opened a new era for large-area, flexible and transparent applications. Despite the progresses, a bottleneck issue of oxide thin-film transistors (TFTs) is the instability either under bias stress or when used as a current source. Furthermore, the carrier mobility and current driving capability need to be improved for high-spec displays. It is still hugely challenging to overcome both issues using the conventional device structure and oxide semiconductor materials. Here, we review our recent work on novel oxide TFTs that show a few desirable properties. Rather than using an ohmic metal contact as the source electrode, a high work-function Schottky source contact enables depletion around the TFT source region, which results in intrinsic immunity to the negative bias illumination stress, no obvious short channel effect, and superb current saturation over a wide range of drain voltage1. The flat saturation current gives rise to an extremely high voltage gain reaching 23,000, which is, to the best of our knowledge, the highest gain ever achieved by a solid-state transistor to date. The threshold voltage is also found to remain stable under different drain voltages, in contrast to standard TFTs, which may be useful in larger-area displays where the drain voltages of the drive TFTs can differ2. Furthermore, the depletion provided by the Schottky source electrode allows utilizing semi-metal ITO to replace IGZO as the TFT channel layer, which significantly enhances the carrier mobility and current driving capability. Other related work may also be discussed in the talk including oxide Schottky diodes operating beyond 10 GHz3, oxide TFTs operating beyond 1 GHz4, significantly enhanced carrier mobility by self-assembled monolayer treatment5,6, and CMOS-like oxide-based logic circuits7,8. References Extremely high-gain source-gated transistors, J Zhang, J Wilson, G Auton, Y Wang, M Xu, Q Xin, A Song, Proceedings of the National Academy of Sciences 116 (11), 4843-4848 (2019) Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors, Zhenze Wang, Li Luo, Yiming Wang, Jiawei Zhang, and Aimin Song, IEEE Transactions on Electron Devices, 69(2), 561 - 566 (2022). Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz, J Zhang, Y Li, B Zhang, H Wang, Q Xin, A Song, Nature communications 6 (1), 1-7 (2015). Amorphous-InGaZnO thin-film transistors operating beyond 1 GHz achieved by optimizing the channel and gate dimensions, Y Wang, J Yang, H Wang, J Zhang, H Li, G Zhu, Y Shi, Y Li, Q Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, Aimin Song, IEEE Transactions on Electron Devices 65 (4), 1377-1382 (2018). Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment, W Cai, J Zhang, J Wilson, J Brownless, S Park, L Majewski, A Song, Advanced Electronic Materials 6 (5), 1901421 (2020). Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment, W Cai, J Wilson, J Zhang, J Brownless, X Zhang, LA Majewski, A Song, ACS Applied Electronic Materials 2 (1), 301-308 (2020). Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors, Y Li, J Yang, Y Wang, P Ma, Y Yuan, J Zhang, Z Lin, L Zhou, Q Xin, Aimin Song, IEEE Electron Device Letters 39 (2), 208-211 (2017). Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO, Y Yuan, J Yang, Y Wang, Z Hu, L Zhou, Q Xin, A Song, IEEE Electron Device Letters 42 (1), 62-65 (2020).
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Late, Dattatray J., and Claudia Wiemer. "Advances in low dimensional and 2D materials." AIP Advances 12, no. 11 (November 1, 2022): 110401. http://dx.doi.org/10.1063/5.0129120.
Повний текст джерелаАнотація:
This special issue is focused on the advances in low-dimensional and 2D materials. 2D materials have gained much consideration recently due to their extraordinary properties. Since the isolation of single-layer graphene in Novoselov et al. [Science 306, 666–669 (2004)], the work on graphene analogs of 2D materials has progressed rapidly across the scientific and engineering fields. Over the last ten years, several 2D materials have been widely explored for technological applications. Moreover, the existence in nature of layered crystallographic structures where exotic properties emerge when the thickness is reduced to a few monolayers has enlarged the field of low-dimensional (i.e., quasi-2D) materials. The special topic aims to collect the recent advances in technologically relevant low-dimensional and 2D materials, such as graphene, layered semiconductors (e.g., MoS2, WS2, WSe2, PtSe2, MoTe2, Black-P, etc.), MXenes, and topological insulators, such as Bi2Te3, Sb2Te3, etc.). There is an urgent need for material innovations for the rapid development of the next technologies based on these materials. The scope of this special topic is to address recent trends in 2D materials and hybrid structures and their widespread applications in device technology and measurement.
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Chang, Yuhua, Jingxuan Wei, and Chengkuo Lee. "Metamaterials – from fundamentals and MEMS tuning mechanisms to applications." Nanophotonics 9, no. 10 (May 14, 2020): 3049–70. http://dx.doi.org/10.1515/nanoph-2020-0045.
Повний текст джерелаАнотація:
AbstractMetamaterials, consisting of subwavelength resonant structures, can be artificially engineered to yield desired response to electromagnetic waves. In contrast to the naturally existing materials whose properties are limited by their chemical compositions and structures, the optical response of metamaterials is controlled by the geometrics of resonant unit cells, called “meta-atoms”. Many exotic functionalities such as negative refractive index, cloaking, perfect absorber, have been realized in metamaterials. One recent technical advance in this field is the active metamaterial, in which the structure of metamaterials can be tuned to realize multiple states in a single device. Microelectromechanical systems (MEMS) technology, well-known for its ability of reconfiguring mechanical structures, complementary metal-oxide-semiconductor (CMOS) compatibility and low power consumption, is perfectly suitable for such purpose. In the past one decade, we have seen numerous exciting works endeavoring to incorporate the novel MEMS functionalities with metamaterials for widespread applications. In this review, we will first visit the fundamental theories of MEMS-based active metamaterials, such as the lumped circuit model, coupled-mode theory, and interference theory. Then, we summarize the recent applications of MEMS-based metamaterials in various research fields. Finally, we provide an outlook on the future research directions of MEMS-based metamaterials and their possible applications.
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Ho, Johnny C. "(Invited) From Bulk to Nanostructured Perovskites." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1307. http://dx.doi.org/10.1149/ma2022-02361307mtgabs.
Повний текст джерелаАнотація:
The dimensionality of semiconductors has a crucial role in determining their properties. Recently, metal halide perovskites have been demonstrated with many exciting applications, attracting wide attention to further their development for advanced optoelectronics, such as photovoltaics, photodetectors, light-emitting diodes, and lasers. At length scales down to nanoscale regimes, surface features as well as quantum confinement effects become dominant in regulating the material properties of perovskite materials. In past years, our group focus on the synthesis and characterization of metal halide perovskites with different configurations, ranging from bulk films, microplates, nanosheets, to nanowires. The corresponding physical properties and device applications were also systematically studied based on their widely tunable dimensionality, morphologies, and compositions. Specifically, for perovskite bulk films, surface defects and bulk structural order significantly affect their device performance. Through optimizing processing techniques, self-assembled quasi-2D perovskite films with graded phase distribution were successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained, which is later employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibited impressive performance with the responsivity up to 444 mA/W and ultrashort response time down to 52 µs. In addition, to assess the intrinsic material properties of crystalline perovskites, freestanding MAPbI3 nanosheets and lead-free Cs3Sb2I9 microplates were fabricated by two-step chemical vapor deposition method, in which excellent optoelectronic performance (e.g., responsively of MAPbI3 nanosheet is measured to be 40 A/W) together with ultra-fast response speed (down to 58 µs) and superior thermal stability were obtained. For nanostructured perovskites, understanding the dimensional features and their impact on the materials and devices is becoming increasingly important. Lately, we reported the direct vapor-liquid-solid growth of single-crystalline all-inorganic lead halide perovskite (i.e., CsPbX3; X = Cl, Br, or I) NWs. These NWs exhibited high-performance photodetection with the responsivity exceeding 4489 A/W and detectivity over 7.9 × 1012 Jones toward the visible light regime. Field-effect transistors based on individual CsPbX3 NWs were also fabricated to show the impressive carrier mobility of 3.05 cm2/Vs, being higher than other all-inorganic perovskite devices. Besides, the realization of high-mobility CsPbBr3 NW devices is reported via a simple surface charge transfer doping strategy. After MoO3 decoration and device fabrication, the hole mobility of CsPbBr3/MoO3 core-shell NW device is significantly enhanced to 23.3 cm2/Vs. All these results provide important guidelines for the further improvement of these perovskite nanostructures for practical utilization.
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Chen, Kunfeng, and Dongfeng Xue. "Cu-based materials as high-performance electrodes toward electrochemical energy storage." Functional Materials Letters 07, no. 01 (February 2014): 1430001. http://dx.doi.org/10.1142/s1793604714300011.
Повний текст джерелаАнотація:
Cu -based materials, including metal Cu and semiconductors of Cu 2 O and CuO , are promising and important candidates toward practical electrochemical energy storage devices due to their abundant, low cost, easy synthesis and environmentally friendly merits. This review presents an overview of the applications of Cu -based materials in the state-of-art electrochemical energy storage, including both lithium-ion batteries and supercapacitors. The synthesis chemistry, structures and the corresponding electrochemical performances of these materials are summarized and compared. During chemical synthesis and electroactive performance measurement of Cu -based materials, we found that Cu – Cu 2 O – CuO sequence governs all related transformations. Novel water-soluble CuCl 2 supercapacitors with ultrahigh capacitance were also reviewed which can advance the understanding of intrinsic mechanism of inorganic pseudocapacitors. The major goal of this review is to highlight some recent progresses in using Cu -based materials for electrochemical energy storage.
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Morritt, G. H., H. Michaels, and M. Freitag. "Coordination polymers for emerging molecular devices." Chemical Physics Reviews 3, no. 1 (March 2022): 011306. http://dx.doi.org/10.1063/5.0075283.
Повний текст джерелаАнотація:
Conductive coordination polymers are hybrid materials with the potential to be implemented in the next generation of electronic devices, owing to several desirable properties. A decade ago, only a few scattered examples exhibiting conductivity existed within this class of materials, yet today groups of coordination polymers possess electrical conductivities and mobilities that rival those of inorganic semiconductors. Many currently emerging energy harvesting and storage technologies are limited by the use of inefficient, unstable, and unsustainable charge transport materials with little tunability. Coordination polymers, on the other hand, offer great electrical properties and fine-tunability through their assembly from molecular building blocks. Herein, the structure–function relationship of these building blocks and how to characterize the resulting materials are examined. Solution processability allows devices to step away drastically from conventional fabrication methods and enables cheap production from earth abundant materials. The ability to tune the electrical and structural properties through modifications at the molecular level during the material synthesis stages allows for a large design space, opening the door to a wide spectrum of applications in environmentally friendly technologies, such as molecular wires, photovoltaics, batteries, and sensors. Sustainable, high-performing charge transport materials are crucial for the continued advance of emerging molecular technologies. This review aims to provide examples of how the promising properties of coordination polymers have been exploited to accelerate the development of molecular devices.
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Zhao, Peiyao, Ziming Cai, Longwen Wu, Chaoqiong Zhu, Longtu Li, and Xiaohui Wang. "Perspectives and challenges for lead-free energy-storage multilayer ceramic capacitors." Journal of Advanced Ceramics 10, no. 6 (November 12, 2021): 1153–93. http://dx.doi.org/10.1007/s40145-021-0516-8.
Повний текст джерелаАнотація:
AbstractThe growing demand for high-power-density electric and electronic systems has encouraged the development of energy-storage capacitors with attributes such as high energy density, high capacitance density, high voltage and frequency, low weight, high-temperature operability, and environmental friendliness. Compared with their electrolytic and film counterparts, energy-storage multilayer ceramic capacitors (MLCCs) stand out for their extremely low equivalent series resistance and equivalent series inductance, high current handling capability, and high-temperature stability. These characteristics are important for applications including fast-switching third-generation wide-bandgap semiconductors in electric vehicles, 5G base stations, clean energy generation, and smart grids. There have been numerous reports on state-of-the-art MLCC energy-storage solutions. However, lead-free capacitors generally have a low-energy density, and high-energy density capacitors frequently contain lead, which is a key issue that hinders their broad application. In this review, we present perspectives and challenges for lead-free energy-storage MLCCs. Initially, the energy-storage mechanism and device characterization are introduced; then, dielectric ceramics for energy-storage applications with aspects of composition and structural optimization are summarized. Progress on state-of-the-art energy-storage MLCCs is discussed after elaboration of the fabrication process and structural design of the electrode. Emerging applications of energy-storage MLCCs are then discussed in terms of advanced pulsed power sources and high-density power converters from a theoretical and technological point of view. Finally, the challenges and future prospects for industrialization of lab-scale lead-free energy-storage MLCCs are discussed.
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Larson, Lawrence A., Justin M. Williams, and Michael I. Current. "Ion Implantation for Semiconductor Doping and Materials Modification." Reviews of Accelerator Science and Technology 04, no. 01 (January 2011): 11–40. http://dx.doi.org/10.1142/s1793626811000616.
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In the 50-plus years since the patent was issued to William Shockley in 1957, ion implantation has become a key process in the commercial production of semiconductor devices, advanced engineering materials and photonic devices. This article reviews the fundamental concepts of production ion implanters for both the processes used in manufacturing and also in the design of the tools themselves. Recent publications in the application areas of semiconductors and materials modification are summarized, focusing on the attendant process effects. These results demonstrate that ion implantation is a well understood technology with abundant and evolving applications.
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El-Feky, Nagham Gamal, Dina Mohamed Ellaithy, and Mostafa Hassan Fedawy. "Ultra-wideband CMOS power amplifier for wireless body area network applications: a review." International Journal of Electrical and Computer Engineering (IJECE) 13, no. 3 (June 1, 2023): 2618. http://dx.doi.org/10.11591/ijece.v13i3.pp2618-2631.
Повний текст джерелаАнотація:
<span lang="EN-US">A survey on ultra-wideband complementary metal-oxide semiconductor (CMOS) power amplifiers for wireless body area network (WBAN) applications is presented in this paper. Formidable growth in the CMOS integrated circuits technology enhances the development in biomedical manufacture. WBAN is a promising mechanism that collects essential data from wearable sensors connected to the network and transmitted it wirelessly to a central patient monitoring station. The ultra-wideband (UWB) technology exploits the frequency band from 3.1 to 10.6 GHz and provides no interference to other communication systems, low power consumption, low-radiated power, and high data rate. These features permit it to be compatible with medical applications. The demand target is to have one transceiver integrated circuit (IC) for WBAN applications, consequently, UWB is utilized to decrease the hardware complexity. The power amplifier (PA) is the common electronic device that employing in the UWB transmitter to boost the input power to the desired output power and then feed it to the antenna of the transmitter. The advance in the design and implementation of ultra-wideband CMOS power amplifiers enhances the performance of the UWB-transceivers for WBAN applications. A review of recently published CMOS PA designs is reported in this paper with comparison tables listing wideband power amplifiers' performance.</span>
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Cui, Can, Junqing Ma, Kai Chen, Xinjie Wang, Tao Sun, Qingpu Wang, Xijian Zhang, and Yifei Zhang. "Active and Programmable Metasurfaces with Semiconductor Materials and Devices." Crystals 13, no. 2 (February 6, 2023): 279. http://dx.doi.org/10.3390/cryst13020279.
Повний текст джерелаАнотація:
Active metasurfaces provide promising tunabilities to artificial meta−atoms with unnatural optical properties and have found important applications in dynamic cloaking, reconfigurable intelligent surfaces, etc. As the development of semiconductor technologies, electrically controlled metasurfaces with semiconductor materials and devices have become the most promising candidate for the dynamic and programmable applications due to the large modulation range, compact footprint, pixel−control capability, and small switching time. Here, a technical review of active and programmable metasurfaces is given in terms of semiconductors, which consists of metasurfaces with diodes, transistors, and newly rising semiconductor materials. Physical models, equivalent circuits, recent advances, and development trends are discussed collectively and critically. This review represents a broad introduction for readers just entering this interesting field and provides perspective and depth for those well−established.
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Cao, Qing. "(Invited) Two-Dimensional Amorphous Carbon Prepared from Solution Precursor As Novel Dielectrics for Nanoelectronics." ECS Meeting Abstracts MA2022-01, no. 9 (July 7, 2022): 755. http://dx.doi.org/10.1149/ma2022-019755mtgabs.
Повний текст джерелаАнотація:
Low-dimensional electronic materials such as carbon nanotubes, graphene, and transition-metal chalcogenides have drawn a lot of interest from the aspects of both fundamental studies and practical applications. Their atomic-scale thickness and unique electrical properties make them become promising candidates as the drop-in replacement of conventional bulk electronic materials in future electronic devices to enable better performance and enhanced functionality. Research on low-dimensional electronic materials so far has predominantly focused on crystalline semimetals and semiconductors. However, advanced electronic devices also require suitable low-dimensional insulators, which are ideally in the highly disordered amorphous form, similar as SiO2 for silicon, to avoid the nonuniformity and defects related with grain boundaries, in order to fulfill their potentials. Here we present a new strategy for the solution-based preparation of atomically thin amorphous carbon as a novel 2D insulator. Our unique process can precisely control the film thickness at atomic level and has excellent scalability toward wafer-scale deposition. The obtained 2D amorphous carbon monolayer exhibits mechanical robustness comparable to graphene and can be suspended as a free-standing membrane on transmission-electron-microscopy grid, allowing the structural characterization down to atomic resolution. The structure-property relationship for such amorphous materials at 2D limit was then established based on a combination of experiment and density-functional theory simulation. The unique physical properties of 2D amorphous carbon suggest it as a promising candidate to accompany crystalline low-dimensional semiconductors and semimetals in future nanoelectronic devices, and its performance advantages over conventional 3D metal oxides and polycrystalline 2D insulators were verified in experiment : Serving as the gate dielectric in graphene transistors, the absence of grain boundaries in 2D amorphous carbon allows us to aggressively reduce the gate-dielectric thickness down to merely three-atomic layers to enhance the capacitance coupling between the gate and the channel, while still maintaining a low leakage current density below 10-4 A/cm2, which is many orders of magnitude lower compared to the leakage current across the polycrystalline hexagonal boron nitride with the same thickness. Meanwhile, the perfectly clean van der Waals interface it forms with the graphene channel leads to the sharply reduction of the device hysteresis and thus average effective mobility twice as high as that of devices built with bulk SiO2 as gate dielectric. Serving as the switching medium in resistive random access memory cells, the atomic-level thinness of the 2D amorphous carbon enables low operating voltage below 0.4 V, fast switching time <20 ns, and low energy consumption per write operation below 20 fJ, together with excellent endurance (>104) and data retention (>10 years @ 85oC). Moreover, its atomic structural heterogeneity provides well defined ion-transport pathways as suggested in ab initio simulations, leading to the drastically improved device-to-device and cycle-to-cycle uniformity with the standard deviation of Set/Reset voltages below 50 mV in experiment, which is among the lowest values ever reported for memristors. The concurrent achievement of all these performance metrics has not been accomplished with memristors built on either bulk oxides or polycrystalline 2D materials.