Статті в журналах: "Semiconductor Properties of ZnO"

1

Fortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

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Di Trolio, Antonio, Alberto M. Testa, and Aldo Amore Bonapasta. "Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO." Nanomaterials 12, no. 9 (May 1, 2022): 1525. http://dx.doi.org/10.3390/nano12091525.

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ZnO is a well-known semiconducting material showing a wide bandgap and an n-type intrinsic behavior of high interest in applications such as transparent electronics, piezoelectricity, optoelectronics, and photovoltaics. This semiconductor becomes even more attractive when doped with a few atomic percent of a transition metal. Indeed, e.g., the introduction of substitutional Co atoms in ZnO (ZCO) induces the appearance of room temperature ferromagnetism (RT-FM) and magneto-optical effects, making this material one of the most important representatives of so-called dilute magnetic semiconductors (DMSs). In the present review, we discuss the magnetic and magneto-optical properties of Co-doped ZnO thin films by considering also the significant improvements in the properties induced by post-growth irradiation with atomic hydrogen. We also show how all of these properties can be accounted for by a theoretical model based on the formation of Co-VO (oxygen vacancy) complexes and the concurrent presence of shallow donor defects, thus giving a sound support to this model to explain the RT-FM in ZCO DMSs.

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3

Amananti, Wilda, Riky Ardiyanto, Heri Sutanto, Iis Nurhasanah, and Inur Tivani. "Analysis of the optical properties of ZnO thin films deposited on a glass substrate by the So-gel method." Journal of Natural Sciences and Mathematics Research 8, no. 1 (June 27, 2022): 52–58. http://dx.doi.org/10.21580/jnsmr.2022.8.1.9623.

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Zinc oxide (ZnO) has attracted the attention of researchers as a photocatalyst material, because ZnO has a wide direct band gap (3.37 eV) and is a semiconductor material with a large excitation binding energy (60 meV). ZnO is a photocatalyst that has many advantages, namely cheap, non-toxic, and theoretically very active under UV irradiation. The most interesting thing about ZnO semiconductor compared to other semiconductors is that ZnO can absorb most of the solar spectrum. However, there is a weakness of the ZnO semiconductor, namely the very fast recombination of charge carriers and the ZnO semiconductor has a low efficiency in the visible region which causes the ZnO semiconductor to have a wide band gap. that is the weakness of ZnO. it is necessary to choose the right method to overcome this deficiency of ZnO. one way that can be done is to increase the photocatalytic ability of zinc oxide, it is necessary to develop it in the manufacture of thin films. The method used in the manufacture of Thin Film is using the sol-gel spray coating method. the first stage is through the manufacture of ZnO precursors by dissolving zinc acetate dehydrate with isopropanol solvent through stirring. then the second stage by adding Monoethanolamine. This stirring lasted for 30 minutes at a temperature of 70°C, the precursor concentration was prepared with three different concentrations which included concentrations of 0.1, 0.3, and 0.5 M. ZnO precursor deposited on the substrate glass is blown at 400 °C. Optical properties are carried out by recording the transmittance and absorbance which are affected by increasing concentrations. The optical transmission spectra show that the transmission increases with decreasing concentration and the maximum transmission in the visible region is about 90% for ZnO thin films prepared with 0.1 M. The optical band gap value produced by the thin film of 0.1 M precursor concentration resulted in an energy band gap of 3.11 eV; thin films of 0.3 M precursor concentration produced an energy band gap of 3.07 eV; and thin film of 0.5M precursor concentration produced an energy band gap of 3.06 eV.©2022 JNSMR UIN Walisongo. All rights reserved.

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Bakranova, Dina, Bekbolat Seitov, and Nurlan Bakranov. "Preparation and Photocatalytic/Photoelectrochemical Investigation of 2D ZnO/CdS Nanocomposites." ChemEngineering 6, no. 6 (November 9, 2022): 87. http://dx.doi.org/10.3390/chemengineering6060087.

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Properties of heterotructured semiconductors based on ZnO/CdS nanosheets are investigated for their possible application in photocatalytic and photoelectrochemical reactions. Semiconductor material is the main active coating of photoanodes, which triggers the half-reaction of water oxidation and reduction, which entails the purifying or splitting of water. This article explains nanocomposite assembly by convenient and simple methods. The study of the physicochemical properties of semiconductor layers is carried out using electron microscopy, X-ray diffractometry, and UV-visible spectroscopy. Studies of electrochemical properties are carried out by potential static methods in electrochemical cells.

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5

Brillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

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6

Kobayashi, Masakazu, Masanobu Izaki, Pei Loon Khoo, Tsutomu Shinagawa, Akihisa Takeuchi, and Kentaro Uesugi. "High-Resolution Mapping of Local Photoluminescence Properties in CuO/Cu2O Semiconductor Bi-Layers by Using Synchrotron Radiation." Materials 14, no. 19 (September 25, 2021): 5570. http://dx.doi.org/10.3390/ma14195570.

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The quality of a semiconductor, which strongly affects its performance, can be estimated by its photoluminescence, which closely relates to the defect and impurity energy levels. In light of this, it is necessary to have a measurement method for photoluminescence properties with spatial resolution at the sub-micron or nanoscale. In this study, a mapping method for local photoluminescence properties was developed using a focused synchrotron radiation X-ray beam to evaluate localized photoluminescence in bi-layered semiconductors. CuO/Cu2O/ZnO semiconductors were prepared on F:SnO2/soda-lime glass substrates by means of electrodeposition. The synchrotron radiation experiment was conducted at the beamline 20XU in the Japanese synchrotron radiation facility, SPring-8. By mounting the high-sensitivity spectrum analyzer near the edge of the CuO/Cu2O/ZnO devices, luminescence maps of the semiconductor were obtained with unit sizes of 0.3 μm × 0.3 μm. The devices were scanned in 2D. Light emission 2D maps were created by classifying the obtained spectra based on emission energy already reported by M. Izaki, et al. Band-like structures corresponding to the stacking layers of CuO/Cu2O/ZnO were visualized. The intensities of emissions at different energies at each position can be associated with localized photovoltaic properties. This result suggests the validity of the method for investigation of localized photoluminescence related to the semiconductor quality.

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7

Shu, Xinpeng. "Research on Photoelectric Properties of ZnO-based Semiconductor Material." Journal of Physics: Conference Series 2541, no. 1 (July 1, 2023): 012060. http://dx.doi.org/10.1088/1742-6596/2541/1/012060.

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Abstract In recent years, many semiconductor materials have been applied to the photocatalysis technology. As a semiconductor with wide band gap (3.37 eV), ZnO has received extensive attention in the photocatalytic degradation of organic pollutants due to its rich morphology, low cost and other advantages. However, due to the wide band gap of ZnO, it can only absorb ultraviolet light (accounting for about 4% of the whole solar spectrum), which has greatly limited the application of ZnO semiconductor materials. BiOI/ZnO binary complexes were synthesized by simple hydrothermal and solvothermal methods. Their phenol degradation activities were tested under different light sources. The mechanism of photocatalytic degradation of phenol was reasonably explained by free radical trapping experiment, surface photovoltage, transient photovoltage, fluorescence and other tests.

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8

Song, Yixiao, Jingwen Qin, Lei Li, Naveed Mushtaq, M. A. K. Yousaf Shah, and Jun Xie. "Introducing Fuel Cell Application Using Sodium Vacancies in Hexagonal Wurtzite Structured ZnO Nanorods for Developing Proton–Ion Conductivity." Crystals 12, no. 11 (November 9, 2022): 1594. http://dx.doi.org/10.3390/cryst12111594.

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Zinc oxide, a direct band gap semiconductor of ≥3.30 eV, is prevalent in potential requests for energy devices. The early-stage demonstration of ZnO provides a new method of developing high ionic conductivity in multifunctional semiconductors for electrolyte applications in ceramic fuel cells (CFCs). In the present work, we successfully synthesized Na-doped ZnO nanorods by a hydrothermal method and employed them as an electrolyte in CFCs. The synthesized Na-doped-ZnO nanorods showed an effective ionic conductivity of 8.75 × 10−2 S cm−1 along with an excellent power density of 609 mWcm−2 ± 5% when the fuel cell was operating at 550 °C. The enhanced ionic conductivity could be due to Na+ doping into Zn2+ and the high ionic radius of Na ions producing bulk oxygen vacancies in the ZnO structure to conduct oxygen ions or protons. Furthermore, we used experimental analysis, such as X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), ultraviolet–visible (UV–visible), X-ray photoelectron spectroscopy (XPS), and electrochemical impedance spectroscopy (EIS), to evaluate the change in structural properties and mechanism of ionic transport in ZnO nanorods with sodium doping. The presented work provides insight into a novel approach of developing the high ionic conductivity of electrolytes in a low-cost ZnO semiconductor material.

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9

Foo, K. L., U. Hashim, Chun Hong Voon, and M. Kashif. "Structural and Electrical Properties of Hydrothermal Growth ZnO Nanorods." Advanced Materials Research 1109 (June 2015): 104–7. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.104.

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ZnO nanorods, type of the metal-oxide semiconductor deposited on interdigitated electrode (IDE) substrate using hydrothermal growth technique. The growth ZnO nanorods was annealed in furnace at 500°C for 2 hours as to obtain highly crystallite of ZnO nanorods. XRD pattern indicated the synthesized ZnO nanorods have preferred orientation along the (002) plane. Moreover, FESEM images showed that the nanorods with the size less than 60 nanometer were successfully synthesized using hydrothermal growth technique. The investigation on optical properties using UV-Vis-NIR spectrophotometer confirmed ZnO is classified as a wide band gap semiconductor material. Furthermore, the growth ZnO nanorods which undergo electrical properties testing using dielectric analyzer and source meter show that the ZnO nanorods demonstrated rectifying behaviour.

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10

Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

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11

Cao, Ling, Dai Zong An, Yan Xin Wang, Shan Shan He, and Chuang Ju Dong. "Studies on the Preparation and Properties of Sheet Ni-Doped ZnO." Advanced Materials Research 356-360 (October 2011): 435–38. http://dx.doi.org/10.4028/www.scientific.net/amr.356-360.435.

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ZnO is a direct wide band-gap Ⅱ-Ⅵ semiconductor material. For decades, ZnO has gained more and more attention as a wide band semiconductor. This paper introduced a modified homogeneous precipitation method to prepare sheet Ni-doped ZnO crystal. The preparation process was studied and the mechanism of this method was discussed. The properties of the sheet Ni-doped ZnO crystal and the effects of growth parameters on the quality of sheet Ni-doped ZnO crystal were studied using XTJ30-micro image manipulation system, thermal analysis system, X-ray diffraction. etc.

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12

Khmelinskii, Igor, and Vladimir I. Makarov. "Optical properties of ZnO semiconductor nanolayers." Materials Research Bulletin 109 (January 2019): 291–300. http://dx.doi.org/10.1016/j.materresbull.2018.09.030.

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13

Zhao, Shuaitongze, and Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells." Journal of Nanoelectronics and Optoelectronics 16, no. 1 (January 1, 2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.

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One-dimensional TiO2, ZnO, and Fe2O3 nanorod arrays are selected as the photocatalytic methanol fuel cell photoanodes, and a greenhouse catalytic methanol fuel cell device is designed. With the photo-generated holes' participation in fuel molecules' oxidation in the semiconductor electrode, chemical energy is converted into electric energy. Firstly, with pot-doped tin dioxide (TRS) as the substrate, TiO2, ZnO, and Fe2O3 nanorod arrays are prepared by hydrothermal method. TiO2 and ZnO are excellent photoelectric catalytic materials with similar energy band capability and strong separation capability for photo-generated charges in the energy band analysis. With a narrow band gap, Fe2O3 can be oxidized by water with visible light. In the experiment, different anodes' photoelectric properties are tested by the Mott-Schottky equation, cyclic voltammetry, and electrochemical analysis. The results show that the ZnO-based photoanode's maximum short-circuit current can reach 1.86 mA/cm2, and its open-circuit voltage can reach 1.15 V, the ZnO-based photoanode's 0.92 mA/cm2 and 1.36 V, and the Fe2O3-based photoanode's 0.08 mA/cm2 and 1.18 V. Compared with Fe2O3 electrodes, TiO2 and ZnO thin-film electrodes have better photocurrent conversion ability in dark, simulated sunlight, and visible light conditions. Fe2O3 electrodes can also generate strong instantaneous anode photocurrents after irradiation.

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14

Yang, Xiaobing, Zhaodong Wen, Ziling Wu, and Xuetao Luo. "Synthesis of ZnO/ZIF-8 hybrid photocatalysts derived from ZIF-8 with enhanced photocatalytic activity." Inorganic Chemistry Frontiers 5, no. 3 (2018): 687–93. http://dx.doi.org/10.1039/c7qi00752c.

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Controllable conjunction of semiconductors with metal organic frameworks (MOFs) has been an efficient tool to enhance the chemical and physical properties of semiconductors by forming semiconductor–MOF hybrid structures.

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15

Tan, Yu, Wan Wan Wang, Sheng Han Zhang, and Ke Xin Liang. "Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys." Advanced Materials Research 1015 (August 2014): 513–16. http://dx.doi.org/10.4028/www.scientific.net/amr.1015.513.

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A transient photoelectrochemical analysis method is improved to investigate the semiconductor properties of oxide films on stainless steel 316L oxidized in high-temperature water. A minute amount of ZnO was added to the high-temperature water environment to alter the semiconductor properties of the oxide film deposited on stainless steel 316L. Characteristic phases in the oxide were investigated using the improved photoelectrochemical analysis method, and the semiconductor properties of the oxide film on stainless steel 316L suggested the presence of an n-type semiconductor. The photoelectrochemical dephasing angle showed movement of the flat band potential in the negative direction after ZnO addition.

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16

Miao, Meng Meng. "Characterization of Photoelectric Properties of ZnO by I-V Measurement." Advanced Materials Research 428 (January 2012): 153–58. http://dx.doi.org/10.4028/www.scientific.net/amr.428.153.

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Experiments with ZnO Metal-Oxide-Semiconductor （MOS） under different circumstances were made to get four different I-V curves. There were four conditions: dark, and tests with the green, blue, ultraviolet LED light. According to references, three parameters B，VB0and Nbarrcould be acquired by fitting lines of the I-V curves using MATLAB and LabVIEW. From their definitions, B, VB0and Nbarrindicate photoelectric properties of ZnO cooperatively under concrete conditions. VB0,grain boundary potential, is parameter of extrinsic properties of ZnO determined by both ZnO and testing conditions. So VB0is critical to control the photoelectric properties of ZnO. A smaller VB0, the stronger the photoelectric response of ZnO and the lager the efficiency of photoelectric conversion. Besides, this theory can be expanded to test the photoelectric properties of the other semiconductor materials. And I-V curves can direct the application of these materials efficiently.

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17

Vallejo, William, Carlos Enrique Diaz-Uribe, and Freider Duran. "Kinetic and Thermodynamic Study of Methylene Blue Adsorption on TiO2 and ZnO Thin Films." Materials 16, no. 12 (June 16, 2023): 4434. http://dx.doi.org/10.3390/ma16124434.

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In this work, we fabricated and characterized ZnO and TiO2 thin films, determining their structural, optical, and morphological properties. Furthermore, we studied the thermodynamics and kinetics of methylene blue (MB) adsorption onto both semiconductors. Characterization techniques were used to verify thin film deposition. The semiconductor oxides reached different removal values, 6.5 mg/g (ZnO) and 10.5 mg/g (TiO2), after 50 min of contact. The pseudo-second-order model was suitable for fitting the adsorption data. ZnO had a greater rate constant (45.4 × 10−3) than that of TiO2 (16.8 × 10−3). The removal of MB by adsorption onto both semiconductors was an endothermic and spontaneous process. Finally, the stability of the thin films showed that both semiconductors maintained their adsorption capacity after five consecutive removal tests.

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18

Narayanan, Kannan Badri, Rakesh Bhaskar, Yong Joo Seok, and Sung Soo Han. "Photocatalytic Degradation, Anticancer, and Antibacterial Studies of Lysinibacillus sphaericus Biosynthesized Hybrid Metal/Semiconductor Nanocomposites." Microorganisms 11, no. 7 (July 14, 2023): 1810. http://dx.doi.org/10.3390/microorganisms11071810.

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The biological synthesis of nanocomposites has become cost-effective and environmentally friendly and can achieve sustainability with high efficiency. Recently, the biological synthesis of semiconductor and metal-doped semiconductor nanocomposites with enhanced photocatalytic degradation efficiency, anticancer, and antibacterial properties has attracted considerable attention. To this end, for the first time, we biosynthesized zinc oxide (ZnO) and silver/ZnO nanocomposites (Ag/ZnO NCs) as semiconductor and metal-doped semiconductor nanocomposites, respectively, using the cell-free filtrate (CFF) of the bacterium Lysinibacillus sphaericus. The biosynthesized ZnO and Ag/ZnO NCs were characterized by various techniques, such as ultraviolet-visible spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The photocatalytic degradation potential of these semiconductor NPs and metal-semiconductor NCs was evaluated against thiazine dye, methylene blue (MB) degradation, under simulated solar irradiation. Ag/ZnO showed 90.4 ± 0.46% photocatalytic degradation of MB, compared to 38.18 ± 0.15% by ZnO in 120 min. The cytotoxicity of ZnO and Ag/ZnO on human cervical HeLa cancer cells was determined using an MTT assay. Both nanomaterials exhibited cytotoxicity in a concentration- and time-dependent manner on HeLa cells. The antibacterial activity was also determined against Gram-negative (Escherichia coli) and Gram-positive (Staphylococcus aureus). Compared to ZnO, Ag/ZnO NCs showed higher antibacterial activity. Hence, the biosynthesis of semiconductor nanoparticles could be a promising strategy for developing hybrid metal/semiconductor nanomaterials for different biomedical and environmental applications.

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19

Mageswari, S., and Balan Palanivel. "Influence of Al, Ta Doped ZnO Seed Layer on the Structure, Morphology and Optical Properties of ZnO Nanorods." Current Smart Materials 4, no. 1 (July 2, 2019): 45–58. http://dx.doi.org/10.2174/2405465804666190326150628.

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Background: Zinc oxide (ZnO) is one of the most attractive II-VI semiconductor oxide material, because of its direct wide band gap (3.37 eV) and large binding energy (60 meV). Zinc oxide (ZnO) is a promising semiconductor due to its optimised optical properties. Among semiconductor nanostructures, the vertically aligned one-dimensional ZnO nanorods are very important for nano device application. Methods: Vertically aligned ZnO nanorod arrays were grown on ZnO, aluminum doped ZnO (ZnO:Al), tantalum doped ZnO (ZnO:Ta) and aluminum and tantalum co-doped ZnO (ZnO:Al,Ta) seed layer by hydrothermal method. Results: The X-Ray Diffraction (XRD) investigation indicated the presence of hexagonal phase for the both seed layers and nanorods. The Scanning Electron Microscope (SEM) images of ZnO and doped ZnO seed layer thin-films show spherical shaped nanograins organized into wave like morphology. The optical absorption spectra revealed shift in absorption edge towards the shorter wavelength (blue shifted) for ZnO nanorods grown on ZnO:Al, ZnO:Ta and ZnO:Al,Ta seed layer compared to ZnO nanorods grown on ZnO seed layer. Conclusion: The increase in band gap value for the ZnO nanorods grown on doped ZnO seed layers due to the decrease in crystallite size and lattice constant as evidenced from XRD analysis. The unique property of Al, Ta doped ZnO can be used to fabricate nano-optoelectronic devices and photovoltaic devices, due to their improved optical properties.

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20

Reddy, K. M., Chhoker Anmol, and Sharma Aditya. "Nano ZNO and surface modification ZNO with graphite oxide deposition to enhance the catalytic activity." i-manager's Journal on Material Science 9, no. 4 (2022): 9. http://dx.doi.org/10.26634/jms.9.4.18523.

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Preparation of ZnO nanoparticles and surface modification ZnO with the carbon material graphite oxide, were synthesized. The synthesized materials were characterized by PXRD, FT-IR, and UV-visible analysis. The materials show better optical and structural properties, which are beneficial in the photocatalytic degradation studies. Under light, zinc oxide and graphite oxide were used to degrade the methyl orange solution. The prepared materials by sol-gel preparation showed enhanced catalytic activity in the photocatalytic activity of methyl orange. An optimal loading content of graphite oxide was investigated. The enhanced photocatalysis was studied in detail. The study provides a promising application for the photocatalytic degradation of organic pollutants in photocatalysis. In the present work, the authors included the new novel materials of ZnO. The ZnO is modified with the surface deposits of rGO. The combined materials of semiconductor materials show a better response to light for the degradation studies. The use of such a combination is a new study and the results reflect the modification of semiconductor materials in the p-block elements such as C, N, F, P and so on for the enhanced photocatalytic applications of semiconductor mediated materials, which are widely used in photocatalysis. The PXRD analysis of ZnO and rGO shows better crystallinity in the case of ZnO, whereas after the deposition of rGO, crystallinity is lost due to the overlap of the main base material semiconductors, which explains the new catalytic and recombination effects of the materials used.

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21

Manaselyan, A. Kh. "UNIQUE PROPERTIES OF ZnO QUANTUM RINGS." Proceedings of the YSU A: Physical and Mathematical Sciences 51, no. 1 (242) (March 20, 2017): 117–20. http://dx.doi.org/10.46991/pysu:a/2017.51.1.117.

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Electronic states and optical transitions of a ZnO quantum ring containing few interacting electrons in an applied magnetic field are found to be very different from those in a conventional semiconductor system, such as a GaAs ring. Strong Zeeman and Coulomb interactions of the ZnO system, exert a profound influence on the electron states and on the optical properties of the ring. In particular, our results indicate that the Aharonov– Bohm effect in a ZnO quantum ring strongly depends on the electron number.

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22

Neupane, H. K., A. Rijal, and N. P. Adhikari. "Structural, Electronic & Magnetic Properties of Pristine and Defected ZnO Monolayer: First-Principles Study." Journal of Nepal Physical Society 9, no. 1 (August 25, 2023): 38–44. http://dx.doi.org/10.3126/jnphyssoc.v9i1.57552.

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Electronic and magnetic properties of materials are appealing properties and have budding applications in the devices. In this work, we have investigated the structural, electronic and magnetic properties of pristine Zinc-Oxide (ZnO) and Oxygen-defected Zinc-Oxide (ZnO_O) materials by spin-polarized density functional theory (DFT) method. Structural properties are studied by calculating their total ground state energy, and found that both are stable 2D materials. It is also found that ZnO have higher stability than of ZnO_O material. Electronic properties of considered materials are examined by analyzing of their band structure, density of states (DOS) calculations and found that ZnO is a direct band gap, n-type semiconductor material in its pristine form and an indirect band gap, p-type semiconductor material in its Oxygen-defected form (ZnO_O). Magnetic properties of pristine and defected ZnO are investigated by analyzing their density of states (DOS) and partial density of states (PDOS) calculations, they revealed that ZnO and ZnO_O have non-magnetic properties.

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23

Abdullahi, Sabiu Said, Garba Shehu Musa Galadanci, Norlaily Mohd Saiden, and Josephine Ying Chyi Liew. "Assessment of Magnetic Properties between Fe and Ni Doped ZnO Nanoparticles Synthesized by Microwave Assisted Synthesis Method." Solid State Phenomena 317 (May 2021): 119–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.317.119.

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The emergence of Dilute Magnetic Semiconductors (DMS) with a potentials for spintronic application have attracted much researches attention, special consideration has been given to ZnO semiconductor material due to its wide band gap of 3.37 eV, large exciting binding energy of 60 meV, moreover, its ferromagnetic behavior at room temperature when doped with transition metals. MxZn1-xO (M = Fe or Ni) nanoparticles were synthesized by microwave assisted synthesis method calcined at 600°C. The structural, morphological and magnetic properties of these nanoparticles were studied using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and Vibrating Sample Magnetometer (VSM) respectively. Single phase Wurtzite hexagonal crystal structure was observed for the undoped and Fe doped ZnO nanoparticles with no any impurity, whereas Ni doped ZnO nanoparticles shows the formation of NiO impurities. The magnetic measurement reveals a diamagnetic behavior for the undoped ZnO meanwhile a clear room temperature ferromagnetism was observed for both Fe and Ni doped ZnO. Fe doped ZnO present a high saturation magnetization compared to Ni doped ZnO. However, Ni doped ZnO present high coercivity. The research was confirmed that Fe doped ZnO material will be good material combination for spintronic applications.

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24

Abdulameer, Z. Th, A. J. Alrubaie, H. A. Alshamarti, S. H. Talib, J. H. Mohammed, H. A. Jameel, R. S. Zabibah, and K. A. Mohammed. "Optical properties of ZnO nanorods and ZnO/CdZnS thin films." Chalcogenide Letters 19, no. 7 (June 2022): 457–62. http://dx.doi.org/10.15251/cl.2022.197.457.

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"Zinc oxide nanorods (ZnO NRs.) film prepared by hydrothermal method and zinc oxide film chemically coated with a trinary semiconductor (CdZnS) thin layer was investigated in this work. Optical properties include transmission, absorption spectra and energy band gaps have been tested for prepared thin films. it was observed that the absorption edge of the films after coating shifted towards higher wavelengths. Also there is a remarkable reduction in energy gap for ZnO/CdZnS film with compare to ZnO NRs. Film. The energy gap of ZnO NRs was 3.2 eV and 2.5 eV for ZnO/CdZnS film. "

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Ekrami, Mohammad, Gabriele Magna, Zahra Emam-djomeh, Mohammad Saeed Yarmand, Roberto Paolesse, and Corrado Di Natale. "Porphyrin-Functionalized Zinc Oxide Nanostructures for Sensor Applications." Sensors 18, no. 7 (July 14, 2018): 2279. http://dx.doi.org/10.3390/s18072279.

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Hybrid materials made of wide band gap semiconductors and dye molecules are largely studied mainly for photovoltaic applications. However, these materials also show interesting chemical sensitivity. Zinc oxides (ZnO) and porphyrins are good examples of a metal oxide semiconductor and a dye molecule that give rise to a hybrid material with such interesting properties. ZnO has been studied for sensors, optoelectronics, electronic devices, photo-anodes for dye-sensitized solar cells, and for mechanical energy harvesting. Porphyrins, on the other side, can be synthesized in order to mimic their roles in living systems such as oxygen transport and charge transfer for catalytic processes in animals and photosynthesis in plants. This paper provides a review of the chemical sensing properties of porphyrin-capped ZnO nanostructures. The methodologies to functionalize the ZnO surface with porphyrins are illustrated with emphasis on the relationships between the material preparation and its sensing properties. The development of sensors is described through the application of the hybrid materials to different transducers.

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26

Giannouli, Myrsini. "Nanostructured ZnO, TiO2, and Composite ZnO/TiO2Films for Application in Dye-Sensitized Solar Cells." International Journal of Photoenergy 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/612095.

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The effects of using composite semiconductor films on the efficiency and stability of dye-sensitized solar cells (DSSCs) were investigated. Four different types of composite ZnO/TiO2cells were developed and sensitized with the organic molecules Coumarin 343 (C343) and Rose Bengal (RB). A comparative assessment of the different composite cells was conducted, and the photovoltaic performance of single-semiconductor ZnO and TiO2solar cells was also compared to that of the composite ZnO/TiO2cells. It was observed that composite cells with ZnO/TiO2ratio equal to 90/10 have comparable efficiency to single-semiconductor cells and have the advantage of higher stability. The effects of using various multicomponent electrolytes on the efficiency and stability of the ZnO/TiO2cells were also investigated. It was observed that the combined properties of the materials used in these electrolytes enhance the efficiency of the composite ZnO/TiO2cells.

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Maia, D. B., R. A. Raimundo, T. A. Passos, and R. A. Torquato. "Analysis of structural, morphological and magnetic properties of diluted magnetic semiconductor ZnO:Eu obtained by combustion reaction." Cerâmica 66, no. 379 (September 2020): 262–68. http://dx.doi.org/10.1590/0366-69132020663792882.

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Abstract Eu-doped semiconductor matrix of ZnO at concentrations of 0.05 and 0.10 mols was synthesized by combustion reaction, using zinc nitrate, europium nitrate, and urea as fuel. In order to analyze the effect of europium concentration and sintering on the structure, band gap, magnetic and morphological properties of ZnO, the samples were sintered at 1100 °C for 30 min and analyzed before and after sintering via X-ray diffraction, ultraviolet and visible spectroscopy, vibrant sample magnetometry, and scanning electron microscopy. From the results obtained, it was found that there was the formation of the semiconductor phase ZnO and also a second-phase (Eu2O3). It was observed that the samples before and after sintering presented band gap values within the semiconductor range and ferromagnetism at room temperature.

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28

Слепченков, М. М., Д. А. Колосов та О. Е. Глухова. "Оптические свойства ван-дер-ваальсовых гетероструктур на основе 2D-монослоев борофена, нитрида галлия и оксида цинка". Оптика и спектроскопия 131, № 6 (2023): 754. http://dx.doi.org/10.21883/os.2023.06.55909.115-23.

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In this paper, we consider two new atomic models of van der Waals vertical heterostructures of metal-semiconductor type based on a 2D buckled triangular borophene with metallic conductivity and graphene-like 2D monolayers of gallium nitride GaN and zinc oxide ZnO, which are semiconductors. Using the density functional theory, the equilibrium configurations of supercells of the borophene/GaN and borophene/ZnO heterostructures are found and their thermodynamic stability at room temperature is shown. Within the framework of the nonstationary first-order perturbation theory, the optical characteristics (complex permittivity and absorption coefficient) are calculated in the electromagnetic radiation wavelength range of 0.2–2 μm. The presence of anisotropy in the optical properties of the borophene/GaN and borophene/ZnO heterostructures is established when the direction of light polarization is chosen. This is due to different manifestations of the optical properties of the constituent monolayers of the heterostructure. When light is polarized in the direction of the zigzag edge of the GaN/ZnO (along the X axis), the optical properties of GaN and ZnO semiconductor monolayers are predominantly manifested. When light is polarized in the direction of the zigzag edge of the borophene monolayer (along the Y axis), the optical properties of borophene manifest themselves. A synergistic effect has been found from the combination of borophene and ZnO monolayers in the composition of the borophene/ZnO vertical heterostructure, which manifests itself in the form of a section of the increasing plot of the real and imaginary parts of the complex permittivity in the infrared region for both directions of light polarization. It is shown that the difference in the values of the absorption coefficient of the borophene/GaN heterostructure between the UV and visible ranges can reach ~ 7 times, between the UV and near IR ranges - ~ 14 times, and for the borophene/ZnO heterostructure this difference can be up to ~ 6 times and up to ~18 times, respectively. It is predicted that borophene/GaN and borophene/ZnO heterostructures can be used to create UV radiation detectors.

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G. S. Santos, João, Marcio A. Correa, Armando Ferreira, Bruno R. Carvalho, Rodolfo B. da Silva, Felipe Bohn, Senendxu Lanceiros-Méndez, and Filipe Vaz. "Magnetic Response Dependence of ZnO Based Thin Films on Ag Doping and Processing Architecture." Materials 13, no. 13 (June 29, 2020): 2907. http://dx.doi.org/10.3390/ma13132907.

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Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the existence of vacancies in both as-cast and annealed films. The magnetic measurements reveal changes in the magnetic order of both ZnO and Ag-doped ZnO films with increasing temperature, showing an evolution from a paramagnetic (at low temperature) to a diamagnetic behavior (at room temperature). Further, the room temperature magnetic properties indicate a ferromagnetic order even for the un-doped ZnO film. The results open new perspectives for the development of multifunctional ZnO semiconductors, the GLAD co-sputtering technique enables the control of the magnetic response, even in the un-doped semiconductor materials.

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Rauf, Nurlaela. "Recent Progress of ZnO-Based Nanoparticle: Synthesizing Methods of Various Dopant and Applications." Jurnal Fisika Flux: Jurnal Ilmiah Fisika FMIPA Universitas Lambung Mangkurat 20, no. 1 (May 2, 2023): 94. http://dx.doi.org/10.20527/flux.v20i1.16044.

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This review focus on the effect of doping rare earth metals, transition metals, noble metals, poor metals, and non-metals on ZnO nanoparticles. ZnO is a semiconductor material with an average wide energy band gap of 3.2 eV. The doping is used to improve the properties of ZnO which strongly depend on their application. The concentration of doping, the type of doping and the process using sol-gel, hydrothermal and precipitation methods are affected in modifying the ZnO lattice parameters. The transition metal widely used for photocatalysts and sensors. The doped application of ZnO nanoparticles as a semiconductor material has proven advantageous in enabling various photocatalytic, glucose biosensors, VOC detection sensors, antibacterial, biomedical, and optoelectronic spintronic, LED, NLO, and silicon solar cells. This review provided information for scientist in choosing the synthesizing methods of ZnO with desired properties and application in future.

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Torquato, R., E. Shirsath Sagar, Ruth Herta Goldsmith Aliaga Kiminami, and Ana Cristina Figueiredo de Melo Costa. "Structural Characterization, and Magnetic Morphological Study of Ni⁺² Doped ZnO Synthesized by Combustion Reaction Application for DMS." Materials Science Forum 727-728 (August 2012): 511–15. http://dx.doi.org/10.4028/www.scientific.net/msf.727-728.511.

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ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.

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Ziat, Younes, Maryama Hammi, Hamza Belkhanchi, Ousama Ifguis, Saloua Rzaoudi, Charaf Laghlimi, Abdelaziz Moutcine, and Charaf Lazrak. "CNTs modified ZnO and TiO₂ thin films: The effect of loading rate on band offset at metal / semiconductor interfaces." E3S Web of Conferences 337 (2022): 05003. http://dx.doi.org/10.1051/e3sconf/202233705003.

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ZnO and TiO2 are direct wide band gap semiconductors with intriguing properties. A wide range of applications makes it one of the most studied materials in the past decade, particularly when elaborated as nanostructures. In this work, we focus on synthesis of CNTs modified ZnO and TiO2 thin films using sol-gel method. The morphological and optical characterizations of the based ZnO and TiO2 films were carried out using scanning and transmission electron microscopy (SEM and TEM), XRD and UV spectroscopy. Electrical properties of the deposited ZnO/CNTs and CNTs /TiO2 were studied using I-V measurements at room temperature in metal/semiconductor/metal configuration, by the use of an array of metallic micro-electrodes deposited on the surface of the elaborated thin films. This allows determining qualitatively the electrical conductivity of thin films and the different parameters of the Schottky junction between the composites nano-films and the substrate. This study is necessary for future applications in solar cell.

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Gu, Yulan, Qingyu Hou, Mude Qi, Xiang Yin, and Zhichao Wang. "First-principle study on the effect of S/Se/Te doping and V_Zn-H_i coexistence on ZnO electrical conductivity." Materials Science-Poland 40, no. 4 (December 1, 2022): 54–63. http://dx.doi.org/10.2478/msp-2022-0047.

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Abstract In a vacuum environment, when ZnO is prepared using the chemical vapor deposition method and the molecular beam epitaxial growth method, H-gap impurities inevitably remain in the ZnO system, which is often ignored. The study of Zn vacancies under experimental conditions poses a challenge. Second, as an n-type semiconductor, ZnO is characterized by a self-compensation of natural donor defects and poor stability, which severely limit the acquisition of p-type ZnO. Based on the above problems, the conductive properties of S/Se/Te doped and VZn-Hi coexisting ZnO were investigated by first principle to acquire high-stability and high-quality p-ZnO. The study found that Zn35SO35, Zn35SeO35, and Zn35SHiO35 all have good p-type conductivity, which can effectively improve hole mobility and electrical conductivity. Among them, Zn35SO35 has the largest hole concentration at 2.80×1021 cm−3, as well as the best conductivity. The choice of Zn35SO35 provides a reference for obtaining new high-quality p-type ZnO semiconductors.

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Gomes Ferreira, Matheus, Henrique Cesar Abreu do Nascimento Telles Rodrigues, Francisco Manoel dos Santos Garrido, and Marta Eloisa Medeiros. "Combustion Synthesis of Semiconductor Oxides and Evaluation of Adsorption and Photocatalysis Properties." Journal of Aerospace Technology and Management, no. 1 (January 21, 2020): 54–57. http://dx.doi.org/10.5028/jatm.etmq.22.

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Improper disposal of effluent contaminated with organic dyes may cause environmental problems. In this context, the ZnO semiconductor and the ZnO/ZnFe2O4 magnetic composite were prepared by the combustion method. The synthesized materials showed adsorption and photocatalysis properties for elimination of methylene blue dye from aqueous medium. About 88% of the methylene blue was eliminated by ZnO and 63% by the composite. In the photocatalysis process, a low cost visible light source was used. These materials can be regenerated by a photo-Fenton process. Moreover, the ZnO/ZnFe2O4 composite can be separated from the reaction medium by a magnetic field.

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Ali, Arlina, Ameram Nadiah, Teo Pao Ter, Jaafar Hidayani, Akmal Syamsir, and Muhamud L. Rahimi. "Optical and Structural Properties of Controlled pH Variation on Zinc Oxide Nanostructured via Hydrothermal Method." Key Engineering Materials 908 (January 28, 2022): 253–58. http://dx.doi.org/10.4028/p-w3o207.

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Zinc oxide (ZnO) had been interested today because of their unique and good properties in electronic devices. ZnO nanostructured was synthesized via hydrothermal method by varied the pH value from 7, 8, 9, 10 and 11. The effect of different pH values from 7, 8, 9, 10 and 11 was changed the morphological, structure and optical properties. The samples characterized with Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD) and Ultraviolet- Visible (UV-Vis) spectroscopy. SEM is to observe the morphology images of ZnO nanostructure grains. XRD revealed the detail information on the crystallographic structure and phase formation of the materials. Lastly, UV-vis spectroscopy is to measure the band gap of optical semiconductor. From SEM result, it had shown that the hexagonal nanorods was obtained at pH 7 and pH 11 whereas nanorods is obtain at pH 8, 9 and 10. XRD revealed that the ZnO nanostructure exhibits the hexagonal wurtzite structure and the average crystallite size of ZnO nanoparticle was calculated. UV-Vis spectroscopy shows the absorption of ZnO and band determination from Tauc Plot relation plotter using UV-vis. The resulted show the pH values affect the nanostructure growth of zinc oxide semiconductor properties.

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Blachowicz, Tomasz, and Andrea Ehrmann. "Recent developments in electrospun ZnO nanofibers: A short review." Journal of Engineered Fibers and Fabrics 15 (January 2020): 155892501989968. http://dx.doi.org/10.1177/1558925019899682.

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Especially for the potential use as sensors, but also in all other applications in which an interaction with the environment occurs, nanofibrous materials are advantageous due to their large specific surface area. An interesting material for electrospinning is the semiconductor zinc oxide (ZnO) which is often used in photoelectric or sensory applications. Nanofibers containing ZnO can be produced, for example, by electrospinning polyvinylpyrrolidone/zinc nitrate from a dimethylformamide/ethanol solution, followed by calcination to remove the organic phase. Alternatively, the polymer/semiconductor blended nanofibers can be used which are often less brittle, but on the other hand offer less contact between ZnO and the environment. Finally, decorating a nanofiber mat with ZnO offers another possibility to prepare nanofibers with ZnO surface. Possible applications of electrospun ZnO nanofibers or nanofiber mats include gas sensing, microwave absorption, photocatalytic degradation or enhancement of supercapacitor electrodes. This short review gives an overview of the most recent electrospinning and after-treatment techniques to create pure and blended ZnO nanofibers and presents the broad variety of possible applications of this well-known semiconductor with some still surprising properties.

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Jabbar, Iqra, Yasir Zaman, Khaled Althubeiti, Sattam Al Otaibi, M. Zahid Ishaque, Nasir Rahman, Mohammad Sohail, et al. "Diluted magnetic semiconductor properties in TM doped ZnO nanoparticles." RSC Advances 12, no. 21 (2022): 13456–63. http://dx.doi.org/10.1039/d2ra01210c.

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Hutsul, Khrystyna. "Synthesis of Semiconductor Nanosized Composite Photocatalyst." ECS Transactions 107, no. 1 (April 24, 2022): 1399–407. http://dx.doi.org/10.1149/10701.1399ecst.

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Every day, composites become an important part of modern functional materials not only due to their complex structure, but also unique new properties. Nanoarchitectonics is a new field that concerns the design and transformation of nanostructures into functional materials at the nanoscale level [1-3]. A composite material is a combination of two or more materials that provides better properties than its individual components [4-5].This paper presents the results of the synthesis of the TiO2-ZnO nanocomposite, as well as the experimental results of the study of some of its properties. The method of precipitation using a reducing agent with intermediate precipitation of zinc hydroxides on the surface of industrial titanium (IV) oxide and their subsequent heat treatment was used for the synthesis of TiO2-ZnO (1:3).The obtained SEM image is presented in Fig and shows that the particles of the synthesized TiO2-ZnO composite have the shape of flakes, which are easily agglomerated into aggregates of complex shapes and different sizes. The electronic image also shows that the individual separated particles have the size which is less than 0.1μm (100 nm), i.e. are in the nanometer range.In order to determine the optical band gap, the obtained TiO2-ZnO nanocomposite powder was dispersed in distilled water by ultrasound to form a suspension, for which the absorption spectrum was then taken. The obtained data were calculated using the Kubelkа-Munch formula and constructed the dependence. Іt can be stated from the data presented that the optical band gap of the obtained powder is ~2.4 eV.

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Sun, Ya Juan, and Wan Xing Wang. "Optical and Electrical Properties of P-Type N-Doped ZnO Film." Key Engineering Materials 609-610 (April 2014): 113–17. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.113.

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Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

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Li, Yan-Li, Hao-Yu Dong, San-Lue Hu, Jia-Ning Li, Meng-Qi Liu, and Zi-Hang Yao. "The manipulation of the physical properties of some typical zinc-blende semiconductors by the electric field." Modern Physics Letters B 33, no. 09 (March 30, 2019): 1950110. http://dx.doi.org/10.1142/s0217984919501100.

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In this research, we regulate the band gaps of some typical zinc-blende semiconductors by applying an external electric field. The variation of the geometric structures and the band gaps of AlP, AlAs, AlSb, GaP, GaAs, ZnO, ZnSe and ZnTe have been studied. We also calculated the stability, density of states, band structures and the charge distribution by the first-principles method based on density functional theory. Moreover, the giant Stark effect coefficients have also been analyzed in detail. From our results, we find that the magnitude and the direction of the electric field has a significant regulation effect on the band gaps and the electronic structures of AlP, AlAs, AlSb, GaP, GaAs, ZnO, ZnSe and ZnTe, which induces a phase transition from semiconductor to metal beyond a certain electric field. Therefore, we can regulate the physical properties of this type of semiconductors by tuning the magnitude and the direction of the electric field. This is very important for practical applications in nanoelectronic devices.

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Lin, Mei Ai, Lin Jun Wang, Jian Huang, Ke Tang, Bing Ren, Jie Zhou, and Yi Ben Xia. "Properties of Li-Doped ZnO Films Deposited on Diamond Films." Key Engineering Materials 544 (March 2013): 234–37. http://dx.doi.org/10.4028/www.scientific.net/kem.544.234.

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Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD) Raman spectroscopy, semiconductor characterization system and Hall effect measurement system. The results showed that the introduction of oxygen as a reactive gas was helpful to improve the crystalline quality of Li-doped ZnO films.

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Wu, Tengfei, Aiji Wang, Mingyu Wang, Yinshu Wang, Zilin Liu, Yiwen Hu, Zhenglong Wu, and Guangfu Wang. "Effects of Pre-Annealing on the Radiation Resistance of ZnO Nanorods." Crystals 12, no. 7 (July 21, 2022): 1007. http://dx.doi.org/10.3390/cryst12071007.

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Ion implantation is usually used for semiconductor doping and isolation, which creates defects in semiconductors. ZnO is a promising semiconductor and has a variety of applications, such as for use in transparent electronics, optoelectronics, chemical and biological sensors, etc. In this work, ZnO nanorods were grown on Si (100) substrates by the process of chemical bath deposition and then annealed in an O2 atmosphere at 350 and 600 °C for 1 h to introduce different kinds of defects. The as-grown nanorods and the nanorods that annealed were irradiated simultaneously by 180 keV H+ ions at room temperature with a total dose of 8.0×1015 ions/cm2. The radiation effects of the H+ ions, effects of the pre-existed defects on the radiation resistance, and the related mechanisms under irradiation were investigated. The crystal and optical properties of the ZnO nanorods after H+ ion irradiation were found to depend upon the pre-existed defects in the nanorods. The existence of the appropriate concentration of oxygen interstitials in the ZnO nanorods caused them to have good radiation resistance. The thermal effects of irradiation played an important role in the property variation of nanorods. The temperature of the nanorods under 180 keV H+ ion bombardment was around 350 °C.

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Porkalai, V., B. Sathya, D. Benny Anburaj, G. Nedunchezhian, S. Joshua Gnanamuthu, and R. Meenambika. "Photoluminescences properties of lanthanum-silver co-doped ZnO nano particles." Modern Electronic Materials 4, no. 4 (December 1, 2018): 135–41. http://dx.doi.org/10.3897/j.moem.4.4.35063.

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Recently, transition metal (TM) and rare earth ion doped II–VI semiconductor nanoparticles have received much attention because such doping can modify and improve optical properties of II–VI semiconductor nanoparticles by large amount. In this study, undoped, La doped and La+Ag co-doped ZnO nano particles have been successfully synthesized by sol-gel method using the mixture of Zinc acetate dihydrate and ethanol solution. The powders were calcinated at 600 °C for 2 h. The effect of lanthanum and lanthanum-silver incorporation on the structure, morphology, optical and electrical conductivity were examined by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray Absorption (EDAX), Fourier transform infrared spectroscopy (FTIR), UV and Photo Luminescence (PL) Characterization. The average particle size of the synthesized ZnO nanoparticles is calculated using the Scherrer formula and is found to be of less than 20 nm. Luminescences properties were found to be enhanced for the La and La+Ag co-doped ZnO nanoparticles.

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Xie, Fang Wei, Pei Li, Li Qiang Zhang, Xiao Liang Wang, Huan Wang, and Xi Fu Song. "Optical Properties of in-Doped Wurtzite ZnO Based on First-Principle." Advanced Materials Research 335-336 (September 2011): 32–35. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.32.

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In-doped ZnO thin film has been found as one of the most promising materials in the optoelectronics, but its optical properties are rarely reported. We calculated optical band gaps and optical properties of Zn1-xInxO with different In doping by using first-principle. The results reveal that the lattice constants of Zn1-xInxO increase linearly with the doping increasing and Zn1-xInxO (x=0.125, x=0.25) crystal comes to be degenerate semiconductor with band gap reduced. The imaginary part of dielectric function has an increasing trend and the absorption capacity significantly increases in ultraviolet (UV) range after doping. Also there is an obvious red-shift in the absorption spectrum. The reflectivity and energy loss spectrum were investigated, too. The results can provide a theoretical reference for finding appropriate UV protective material.

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45

Chen, Lanli, Yuanyuan Cui, Zhihua Xiong, Mingbin Zhou, and Yanfeng Gao. "Chemical functionalization of the ZnO monolayer: structural and electronic properties." RSC Advances 9, no. 38 (2019): 21831–43. http://dx.doi.org/10.1039/c9ra03484f.

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After hydrogenation or fluorination, the band gap of the ZnO monolayer can be effectively modulated, and a nonmagnetic metal or magnetic half-metal → non-magnetic semiconductor transition can be achieved.

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HUANG, YUAN MING, QING-LAN MA, and BAO-GAI ZHAI. "CORE-SHELL Zn/ZnO STRUCTURES WITH IMPROVED PHOTOCATALYTIC PROPERTIES SYNTHESIZED BY AQUEOUS SOLUTION METHOD." Functional Materials Letters 06, no. 06 (November 27, 2013): 1350058. http://dx.doi.org/10.1142/s1793604713500586.

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A facile and green method was utilized to synthesize core-shelled Zn / ZnO microspheres by boiling Zn microparticles in water for improving the photocatalytic activity of ZnO . The synthesized Zn / ZnO core-shells were investigated by means of scanning electron microscope, X-ray diffractometer and photoluminescence spectrometer, respectively. The morphology analysis showed that the metallic Zn core was about 6 μm in diameter while the ZnO shell was about 600 nm in thickness. Compared to ZnO nanoparticles, the core-shelled Zn / ZnO microspheres exhibited improved photocatalytic activity in degrading methyl orange in water. Our results suggest that the metal–semiconductor junction formed at the Zn / ZnO interface is responsible for the enhanced photocatalytic activity of ZnO .

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Ahmad, Tokeer, Sarvari Khatoon, and Ruby Phul. "A Review on Chemical Synthesis, Characterization and Optical Properties of Nanocrystalline Transition Metal Doped Dilute Magnetic Semiconductors." Solid State Phenomena 201 (May 2013): 103–29. http://dx.doi.org/10.4028/www.scientific.net/ssp.201.103.

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Nanomaterials have fascinated researchers in recent years because these materials exhibit unusual optical, magnetic and electrical properties as compared to their bulk counterparts. Incorporating impurity ions into a semiconducting host to extend its properties has been one of the most important techniques that paved the way for the modern technology based on spintronic devices. Over the past few years, oxide based dilute magnetic semiconductors (DMSs) have gained remarkable interest due to the possibility of inducing room temperature ferromagnetism. This review describes the experimental developments and optical properties of oxide based DMSs, including the recent results on ZnO, CdO and In2O3 based systems. Optical properties of transition metal (TM)-doped ZnO, CdO and In2O3 dilute magnetic semiconductor nanoparticles show red shift in energy band gaps. Such types of phenomena are attributed to sp-d exchange interactions between band electrons and localized d-electrons of the substituted transition metal ions. Table of Contents

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48

Wang, Shiwei, Weiqiang Bo, Min Zhong, Cong Liu, Ying Li, Mingyuan Zhu, Yemin Hu, and Hongmin Jin. "Effect of Cr Content on the Properties of Magnetic Field Processed Cr-Doped ZnO-Diluted Magnetic Semiconductors." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/501069.

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Cr-doped ZnO-diluted magnetic semiconductor (DMS) nanocrystals with various Cr contents were synthesized by hydrothermal method under high magnetic field. The result indicated that both the amount of Cr contents and high magnetic field significantly influenced crystal structure, morphology, and magnetic property of Cr-doped ZnO DMSs. When the Cr contents increased from 1 at% to 5 at%, the morphology of grains sequentially changed from flower-like to rod-like and then to the flake-like form. All the samples remained hexagonal wurtzite structure after Cr ions were doped into the ZnO crystal lattice. The Cr doping led to the increasing amount of defects and even enhanced the magnetic property of the matrix materials. All the Cr-doped ZnO DMSs obtained under high magnetic field exhibited obvious ferromagnetic behavior at room temperature. The results have also shown the successful substitution of the Cr3+ions for the Zn2+ions in the crystal lattice.

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Thu, Phung Thi, Vu Duy Thinh, Vu Dinh Lam, Ta Ngoc Bach, Le Thi Hong Phong, Do Hoang Tung, Do Hung Manh, Nguyen Van Khien, Trinh Xuan Anh, and Ngo Thi Hong Le. "Decorating of Ag and CuO on ZnO Nanowires by Plasma Electrolyte Oxidation Method for Enhanced Photocatalytic Efficiency." Catalysts 12, no. 7 (July 21, 2022): 801. http://dx.doi.org/10.3390/catal12070801.

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In this work, photocatalytic performance is divulged in the ternary CuO-Ag-ZnO nanowire synthesized via a two-step approach. The decoration of Ag and CuO nanostructures onto the surface of ZnO nanowires was simply carried out by using the plasma electrolytic oxidation method in a short time. The structure, size, morphology, and optical properties of as-prepared samples were characterized by X-ray diffraction, field-emission scanning electron microscopy, and spectrophotometry measurements. The diameters of Ag nanoparticles and ZnO nanoflowers are in the range of 5–20 nm and 20–60 nm, respectively. Within the first 15 min, methyl orange was decolorized 96.3 and 82.8% in the CuO-Ag-ZnO and Ag-ZnO, respectively, and there is only about 46.7% of that decomposed in pure ZnO. The CuO-Ag-ZnO shows a higher rate constant k = 0.2007 min−1 and a lower half-life time t = 6.1 min compared to Ag-ZnO and bare ZnO nanowires. The photo-reusability of the ternary nanostructures was estimated to be much outweighed compared to ZnO nanowires. Interestingly, the synergic incorporation between noble metal–semiconductor or semiconductor–semiconductor in the interfaces of Ag-CuO, Ag-ZnO, and CuO-ZnO expands the visible light absorption range and eliminates the photogenerated electron–hole recombination, resulting in a superior visible-light-driven photocatalyst.

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Gasparotto, Gisane, Talita Mazon, Gisele Gasparotto, Maria Aparecida Zaghete, Leinig Antonio Perazolli, and José Arana Varela. "Gas Sensor Properties of ZnO Nanorods Grown by Chemical Bath Deposition." Advanced Materials Research 975 (July 2014): 189–93. http://dx.doi.org/10.4028/www.scientific.net/amr.975.189.

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The present work shows a study about the growing of ZnO nanorods by chemical bath deposition (CBD) and its application as gas sensor. It was prepared ZnO nanorods and Au decorated ZnO nanorods and the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and gas sensing response measurements. The results obtained by XRD show the growth of ZnO phase. It was possible to observe the formation of uniform dense well-aligned ZnO nanorods. The results obtained also revealed that Ag nanoparticles have decorated the surface of ZnO nanorods successfully. Au nanoparticles with diameter of a few nanometers were distributed over the ZnO surface nanorods. The gas sensing response measurements showed a behavior of n type semiconductor. Furthermore, the Au-functionalized ZnO nanorods gas sensors showed a considerably enhanced response at 250 and 300 °C.

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