Статті в журналах з теми "Semiconductor metal interface"
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FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (August 1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.
Повний текст джерелаZhang, Mingrui, Mitchell Adkins, and Zhe Wang. "Recent Progress on Semiconductor-Interface Facing Clinical Biosensing." Sensors 21, no. 10 (May 16, 2021): 3467. http://dx.doi.org/10.3390/s21103467.
Повний текст джерелаHINDMARCH, AIDAN T. "INTERFACE MAGNETISM IN FERROMAGNETIC METAL–COMPOUND SEMICONDUCTOR HYBRID STRUCTURES." SPIN 01, no. 01 (June 2011): 45–69. http://dx.doi.org/10.1142/s2010324711000069.
Повний текст джерелаKim, H., K. Okuno, and T. Sakurai. "METAL-SEMICONDUCTOR INTERFACE (Al-Si)." Le Journal de Physique Colloques 48, no. C6 (November 1987): C6–469—C6–472. http://dx.doi.org/10.1051/jphyscol:1987677.
Повний текст джерелаSinclair, Robert. "Reactions at metal-semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 448–49. http://dx.doi.org/10.1017/s0424820100154214.
Повний текст джерелаHatta, Hideyuki, Yuhi Miyagawa, Takashi Nagase, Takashi Kobayashi, Takashi Hamada, Shuichi Murakami, Kimihiro Matsukawa, and Hiroyoshi Naito. "Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy." Applied Sciences 8, no. 9 (August 29, 2018): 1493. http://dx.doi.org/10.3390/app8091493.
Повний текст джерелаCao, Zhen, Moussab Harb, Sergey M. Kozlov, and Luigi Cavallo. "Structural and Electronic Effects at the Interface between Transition Metal Dichalcogenide Monolayers (MoS2, WSe2, and Their Lateral Heterojunctions) and Liquid Water." International Journal of Molecular Sciences 23, no. 19 (October 7, 2022): 11926. http://dx.doi.org/10.3390/ijms231911926.
Повний текст джерелаHersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.
Повний текст джерелаWu, Xu, and Edward S. Yang. "Interface capacitance in metal‐semiconductor junctions." Journal of Applied Physics 65, no. 9 (May 1989): 3560–67. http://dx.doi.org/10.1063/1.342631.
Повний текст джерелаHASEGAWA, HIDEKI. "MICROSCOPIC UNDERSTANDING AND CONTROL OF SURFACES AND INTERFACES OF COMPOUND SEMICONDUCTORS FOR MESOSCOPIC DEVICES." Surface Review and Letters 07, no. 05n06 (October 2000): 583–88. http://dx.doi.org/10.1142/s0218625x0000066x.
Повний текст джерелаWang, Jingang, Naixing Feng, Ying Sun, and Xijiao Mu. "Nanoplasmon–Semiconductor Hybrid for Interface Catalysis." Catalysts 8, no. 10 (September 29, 2018): 429. http://dx.doi.org/10.3390/catal8100429.
Повний текст джерелаMönch, Winfried. "Electronic properties of ideal and interface-modified metal-semiconductor interfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (July 1996): 2985. http://dx.doi.org/10.1116/1.588947.
Повний текст джерелаCarter, C. Barry, Jane G. Zhu, and C. J. Palmstrøm. "Metal/GaAs interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 446–47. http://dx.doi.org/10.1017/s0424820100154202.
Повний текст джерелаIrokawa, Yoshihiro. "Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors." Materials Science Forum 740-742 (January 2013): 473–76. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.473.
Повний текст джерелаWu, Ping, and Yingzhi Zeng. "Quantifying the relationship between interface chemistry and metal electronegativity of metal–semiconductor interfaces." Journal of Materials Chemistry 20, no. 46 (2010): 10345. http://dx.doi.org/10.1039/c0jm01731k.
Повний текст джерелаNishimura, Tomonori, Takeaki Yajima, and Akira Toriumi. "Reconsideration of Metal Work Function at Metal/Semiconductor Interface." ECS Transactions 80, no. 4 (August 1, 2017): 107–12. http://dx.doi.org/10.1149/08004.0107ecst.
Повний текст джерелаKim, Heeyoung, Ye Ji Kim, Yeon Sik Jung, and Jeong Young Park. "Enhanced flux of chemically induced hot electrons on a Pt nanowire/Si nanodiode during decomposition of hydrogen peroxide." Nanoscale Advances 2, no. 10 (2020): 4410–16. http://dx.doi.org/10.1039/d0na00602e.
Повний текст джерелаChiou, Y. Z., C. H. Chen, Y. K. Su, and S. J. Chang. "GaN metal–semiconductor interface and its applications in GaN and InGaN metal–semiconductor–metal photodetectors." IEE Proceedings - Optoelectronics 150, no. 2 (April 1, 2003): 115–18. http://dx.doi.org/10.1049/ip-opt:20030371.
Повний текст джерелаBista, Dinesh, Turbasu Sengupta, and Shiv N. Khanna. "Massive dipoles across the metal–semiconductor cluster interface: towards chemically controlled rectification." Physical Chemistry Chemical Physics 23, no. 34 (2021): 18975–82. http://dx.doi.org/10.1039/d1cp02420e.
Повний текст джерелаKubby, J. A., and W. J. Greene. "Electron interferometry at a metal-semiconductor interface." Physical Review Letters 68, no. 3 (January 20, 1992): 329–32. http://dx.doi.org/10.1103/physrevlett.68.329.
Повний текст джерелаTan, Shijing, Adam Argondizzo, Jindong Ren, Liming Liu, Jin Zhao, and Hrvoje Petek. "Plasmonic coupling at a metal/semiconductor interface." Nature Photonics 11, no. 12 (November 30, 2017): 806–12. http://dx.doi.org/10.1038/s41566-017-0049-4.
Повний текст джерелаBrillson, L. J., R. E. Viturro, J. L. Shaw, and H. W. Richter. "Cathodoluminescence spectroscopy of metal–semiconductor interface structures." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (May 1988): 1437–45. http://dx.doi.org/10.1116/1.575722.
Повний текст джерелаBulat, L. P., I. A. Erofeeva, Yu V. Vorobiev, and J. González-Hernández. "Metal–semiconductor interface in extreme temperature conditions." Applied Surface Science 255, no. 3 (November 2008): 659–61. http://dx.doi.org/10.1016/j.apsusc.2008.07.007.
Повний текст джерелаBrillson, L. J., S. Chang, J. Shaw, and R. E. Viturro. "Interface states at metal-compound semiconductor junctions." Vacuum 41, no. 4-6 (January 1990): 1016–20. http://dx.doi.org/10.1016/0042-207x(90)93849-e.
Повний текст джерелаItkis, M. E., F. Ya Nad', P. Monceau, and M. Renard. "Metal-one-dimensional Peierls semiconductor interface phenomena." Journal of Physics: Condensed Matter 5, no. 27 (July 5, 1993): 4631–40. http://dx.doi.org/10.1088/0953-8984/5/27/008.
Повний текст джерелаKoide, Yasuo. "Metal–diamond semiconductor interface and photodiode application." Applied Surface Science 254, no. 19 (July 2008): 6268–72. http://dx.doi.org/10.1016/j.apsusc.2008.02.157.
Повний текст джерелаSalvan, F., F. Thibaudau, and Ph Dumas. "STM studies of metal-semiconductor interface formation." Applied Surface Science 41-42 (January 1990): 88–96. http://dx.doi.org/10.1016/0169-4332(89)90038-x.
Повний текст джерелаJia, Chuancheng, Xinxi Li, Na Xin, Yao Gong, Jianxin Guan, Linan Meng, Sheng Meng, and Xuefeng Guo. "Interface-Engineered Plasmonics in Metal/Semiconductor Heterostructures." Advanced Energy Materials 6, no. 17 (June 3, 2016): 1600431. http://dx.doi.org/10.1002/aenm.201600431.
Повний текст джерелаHarada, T., S. Ito та A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation". Science Advances 5, № 10 (жовтень 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.
Повний текст джерелаKovenskiy, I. M., S. V. Malysh, and V. V. Povetkin. "STRUCTURAL PECULIARITIES OF THE PROCESS OF ELECTROLYTIC CHROMIUM PLATING IN RESTORATION OF WORN PARTS." Oil and Gas Studies, no. 1 (March 1, 2018): 92–97. http://dx.doi.org/10.31660/0445-0108-2018-1-92-97.
Повний текст джерелаChar, K. "Crystal Interface Engineering in High Tc Oxides." MRS Bulletin 19, no. 9 (September 1994): 51–55. http://dx.doi.org/10.1557/s0883769400047990.
Повний текст джерелаBurstein, L., J. Bregman, and Yoram Shapira. "Characterization of interface states at III‐V compound semiconductor‐metal interfaces." Journal of Applied Physics 69, no. 4 (February 15, 1991): 2312–16. http://dx.doi.org/10.1063/1.348712.
Повний текст джерелаBrillson, L. J. "Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25, no. 4 (July 2007): 943–49. http://dx.doi.org/10.1116/1.2432348.
Повний текст джерелаKim, Taikyu, Jeong-Kyu Kim, Baekeun Yoo, Hongwei Xu, Sungyeon Yim, Seung-Hwan Kim, Hyun-Yong Yu, and Jae Kyeong Jeong. "Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering." Journal of Materials Chemistry C 8, no. 1 (2020): 201–8. http://dx.doi.org/10.1039/c9tc04345d.
Повний текст джерелаVaknin, Yonatan, Ronen Dagan, and Yossi Rosenwaks. "Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors." Nanomaterials 10, no. 12 (November 26, 2020): 2346. http://dx.doi.org/10.3390/nano10122346.
Повний текст джерелаMun-Soo Yun and Chang-Su Huh. "Interface phenomena of organic semiconductor junctioned with metal and inorganic semiconductor." Synthetic Metals 28, no. 1-2 (January 1989): 715–21. http://dx.doi.org/10.1016/0379-6779(89)90595-x.
Повний текст джерелаManku, T., and A. Nathan. "Effective mobility in p-channel Si–SiGe metal oxide semiconductor field effect transistors (MOSFETs)." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 959–62. http://dx.doi.org/10.1139/p92-153.
Повний текст джерелаGao, Xian, Ji Long Tang, Dan Fang, Fang Chen, Shuang Peng Wang, Hai Feng Zhao, Xuan Fang, et al. "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes." Advanced Materials Research 1118 (July 2015): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.270.
Повний текст джерелаEbong, Abasifreke. "(Invited) Metallization: The Future of Highly Reliable Fire-through-Dielectric-Contacts to Silicon Solar Cells." ECS Meeting Abstracts MA2022-02, no. 16 (October 9, 2022): 826. http://dx.doi.org/10.1149/ma2022-0216826mtgabs.
Повний текст джерелаFeng, Wei, Xin Zhou, Wei Quan Tian, Wei Zheng, and PingAn Hu. "Performance improvement of multilayer InSe transistors with optimized metal contacts." Physical Chemistry Chemical Physics 17, no. 5 (2015): 3653–58. http://dx.doi.org/10.1039/c4cp04968c.
Повний текст джерелаCHAN, YIN THAI. "HETEROSTRUCTURED HYBRID COLLOIDAL SEMICONDUCTOR NANOCRYSTALS." COSMOS 06, no. 02 (December 2010): 235–45. http://dx.doi.org/10.1142/s0219607710000589.
Повний текст джерелаPlusnin, Nikolay I. "Wetting Layer and Formation of Metal - Semiconductor Interface." Defect and Diffusion Forum 386 (September 2018): 9–14. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.9.
Повний текст джерелаChristianen, P. C. M., P. J. van Hall, H. J. A. Bluyssen, M. R. Leys, L. Drost, and J. H. Wolter. "Ultrafast carrier dynamics at a metal‐semiconductor interface." Journal of Applied Physics 80, no. 12 (December 15, 1996): 6831–38. http://dx.doi.org/10.1063/1.363749.
Повний текст джерелаWang, Jian, Xiaohao Jia, Zhaotong Wang, Weilong Liu, Xiaojun Zhu, Zhitao Huang, Haichao Yu, et al. "Ultrafast plasmonic lasing from a metal/semiconductor interface." Nanoscale 12, no. 31 (2020): 16403–8. http://dx.doi.org/10.1039/d0nr02330b.
Повний текст джерелаHill, I. G., A. J. Mäkinen, and Z. H. Kafafi. "Initial stages of metal/organic semiconductor interface formation." Journal of Applied Physics 88, no. 2 (July 15, 2000): 889–95. http://dx.doi.org/10.1063/1.373752.
Повний текст джерелаDimoulas, A., D. P. Brunco, S. Ferrari, J. W. Seo, Y. Panayiotatos, A. Sotiropoulos, T. Conard, et al. "Interface engineering for Ge metal-oxide–semiconductor devices." Thin Solid Films 515, no. 16 (June 2007): 6337–43. http://dx.doi.org/10.1016/j.tsf.2006.11.129.
Повний текст джерелаUedono, A., S. Tanigawa, and Y. Ohji. "Metal/oxide/semiconductor interface investigated by monoenergetic positrons." Physics Letters A 133, no. 1-2 (October 1988): 82–84. http://dx.doi.org/10.1016/0375-9601(88)90742-6.
Повний текст джерелаTorres, I., and D. M. Taylor. "Interface states in polymer metal-insulator-semiconductor devices." Journal of Applied Physics 98, no. 7 (October 2005): 073710. http://dx.doi.org/10.1063/1.2081109.
Повний текст джерелаYang, M. J., C. H. Yang, M. A. Kinch, and J. D. Beck. "Interface properties of HgCdTe metal‐insulator‐semiconductor capacitors." Applied Physics Letters 54, no. 3 (January 16, 1989): 265–67. http://dx.doi.org/10.1063/1.100985.
Повний текст джерелаLi, Jong-Lih, Chieh-Hsiung Kuan, and Ting-Wei Liao. "Well-Patterned Metal-Semiconductor Interface Improving Contact Conductance." Journal of Nanoscience and Nanotechnology 12, no. 10 (October 1, 2012): 7975–79. http://dx.doi.org/10.1166/jnn.2012.6629.
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