Дисертації з теми "Semiconductor metal interface"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 дисертацій для дослідження на тему "Semiconductor metal interface".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте дисертації для різних дисциплін та оформлюйте правильно вашу бібліографію.
Denk, Matthias. "Structural investigation of solid liquid interfaces metal semiconductor interface /." [S.l. : s.n.], 2006. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29148.
Повний текст джерелаMaani, Colette. "A study of some metal-semiconductor interfaces." Thesis, University of Ulster, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329499.
Повний текст джерелаPalmgren, Pål. "Initial stages of metal- and organic-semiconductor interface formation." Licentiate thesis, KTH, KTH, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3911.
Повний текст джерелаThis licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy.
First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. The resulting broken bonds causes As entities to form which are loosely bond to the surface and evaporate upon thermal treatment. Thus, the adsorption of Co results in a rough interface.
Secondly the metal-free phthalocyanine (H2PC) - titanium dioxide interface (organic-semiconductor) is investigated. Here it is found that the organic molecules arrange themselves along the substrate rows upon thermal treatment. The interaction with the TiO2 is mainly with the valence Π-electrons in the molecule causing a relatively strong bond, but this interaction is short range as the second layer of molecules retains their molecular character. This results in an ordered adsorption but limited mobility of the molecules on the surface prohibiting well ordered close packed layers. Furthermore, the hydrogen atoms inside the cyclic molecule leave the central void upon thermal treatment.
The third case is the H2PC-InAs/InSb interface (organic-semiconductor). Here ordered overlayer growth is found on both substrates where the molecules are preferentially adsorbed on the In rows in the [110] direction forming one-dimensional chains. The InSb-H2PC interface is found to be weakly interacting and the bulk-like molecular character is retained upon both adsorption and thermal treatment. On the InAs-H2PC interface, however, the interaction is stronger. The molecules are more affected by the surface bond and this effect stretches up a few monolayers in the film after annealing.
Yan, Yu. "Interface magnetic properties in ferromagnetic metal/semiconductor and related heterostructures." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/20412/.
Повний текст джерелаEvans, D. A. "The metal-indium phosphide (110) interface : Interactions and Schottky barrier formation." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234721.
Повний текст джерелаMoran, John Thomas. "The electronic structure of gold-induced reconstructions on vicinal silicon(111)." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283057.
Повний текст джерелаHuang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.
Повний текст джерелаZavaliche, Florin. "The metal-semiconductor interface Fe-Si(001) and Fe-InP(001) /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965216217.
Повний текст джерелаWalters, Stephanie A. "The metal - n-type gallium antimonide (110) interface : interfacial reactions and Schottky barrier formation." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238197.
Повний текст джерелаMetcalf, Frances L. "The noble metal/elemental semiconductor interface (a study of Ag on Ge(111))." Thesis, University of Sussex, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306595.
Повний текст джерелаYano, Hiroshi. "Control of Electronic Characteristics at SiO_2/SiC Interface for SiC Power Metal-Oxide-Semiconductor Devices." 京都大学 (Kyoto University), 2001. http://hdl.handle.net/2433/150681.
Повний текст джерелаRacke, David. "Measuring and Controlling Energy Level Alignment at Hybrid Organic/Inorganic Semiconductor Interfaces." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/556212.
Повний текст джерелаFonseca, James Ernest. "Accurate treatment of interface roughness in nanoscale double-gate metal oxide semiconductor field effect transistors using non-equilibrium Green's functions." Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176318345.
Повний текст джерелаHossain, Md Tashfin Zayed. "Electrical characteristics of gallium nitride and silicon based metal-oxide-semiconductor (MOS) capacitors." Diss., Kansas State University, 2013. http://hdl.handle.net/2097/16942.
Повний текст джерелаDepartment of Chemical Engineering
James H. Edgar
The integration of high-κ dielectrics with silicon and III-V semiconductors is important due to the need for high speed and high power electronic devices. The purpose of this research was to find the best conditions for fabricating high-κ dielectrics (oxides) on GaN or Si. In particular high-κ oxides can sustain the high breakdown electric field of GaN and utilize the excellent properties of GaN. This research developed an understanding of how process conditions impact the properties of high-κ dielectric on Si and GaN. Thermal and plasma-assisted atomic layer deposition (ALD) was employed to deposit TiO₂ on Si and Al₂O₃ on polar (c-plane) GaN at optimized temperatures of 200°C and 280°C respectively. The semiconductor surface treatment before ALD and the deposition temperature have a strong impact on the dielectric’s electrical properties, surface morphology, stoichiometry, and impurity concentration. Of several etches considered, cleaning the GaN with a piranha etch produced Al₂O₃/GaN MOS capacitors with the best electrical characteristics. The benefits of growing a native oxide of GaN by dry thermal oxidation before depositing the high-κ dielectric was also investigated; oxidizing at 850°C for 30 minutes resulted in the best dielectric-semiconductor interface quality. Interest in nonpolar (m-plane) GaN (due to its lack of strong polarization field) motivated an investigation into the temperature behavior of Al₂O₃/m-plane GaN MOS capacitors. Nonpolar GaN MOS capacitors exhibited a stable flatband voltage across the measured temperature range and demonstrated temperature-stable operation.
Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.
Повний текст джерелаStreb, Fabian. "Novel materials for heat dissipation in semiconductor technologies." Eigenverlag, 2018. https://monarch.qucosa.de/id/qucosa%3A23536.
Повний текст джерелаWärmemanagement ist eine große Herausforderung sowohl für aktuelle als auch für zukünftige Halbleiterprodukte. Speziell die nächste Produktgeneration mit SiC oder GaN Chips benötigen neue Entwärmungskonzepte, um ihr volles Potential bezüglich höherer Stromstärken zu entfalten. In dieser Arbeit wurden vier neuartige Konzepte erforscht: Diamant basierte Substrate, Phasen-Wechsel-Materialien, Cu-Graphene Kompositschichten und anisotrope Entwärmung. Es zeigte sich, dass anisotrope Entwärmung das vielversprechendste Konzept ist. Als Demonstrator wurde eine Bodenplatte mit thermisch pyrolytischen Graphiteinleger für ein Leistungsmodul gefertigt. Sie zeigt eine lokale Erhöhung der Entwärmung von 30 %. Weiter ist der thermische Kontakt zwischen Bauteil und Kühler sehr wichtig. Verschiedene Charakterisierungsmethoden für thermische Schnittstellen-Materialien wurden verglichen. Dieser Vergleich zeigt, dass eine Kombination verschiedener Methoden notwendig ist, um ein vollständiges Bild über die Leistungsfähigkeit solcher Materialien zu gewinnen. Eine neue Messmethode wurde entwickelt, um die thermische Kontakt-Leitfähigkeit zu messen. Diese neue Methode ermöglicht es, die beste Wärmeleitpaste für eine vorgegebene Kombination aus Produkt und Kühleroberfläche zu identifizieren.
Djeghloul, Fatima Zohra. "Study of organic semiconductor / ferromagnet interfaces by spin-polarized electron scattering and photoemission." Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-01062352.
Повний текст джерелаCai, Wei. "Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-k Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615.
Повний текст джерелаKobayashi, Takuma. "Study on Defects in SiC MOS Structures and Mobility-Limiting Factors of MOSFETs." Kyoto University, 2018. http://hdl.handle.net/2433/232043.
Повний текст джерелаFichou, Denis. "L'interface oxyde de zinc/électrolyte : étude des processus primaires." Paris 6, 1986. http://www.theses.fr/1986PA066259.
Повний текст джерелаCharlesworth, Jason. "Electronic structure of metal-semiconductor interfaces." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239738.
Повний текст джерелаBadoz, Pierre-Antoine. "Propriétés de transport électronique dans les hétérostructures métal/semiconducteur." Grenoble 1, 1988. http://www.theses.fr/1988GRE10024.
Повний текст джерелаTallarida, Massimo. "Electronic properties of semiconductor surfaces and metal, semiconductor interfaces." [S.l.] : [s.n.], 2005. http://www.diss.fu-berlin.de/2005/196/index.html.
Повний текст джерелаCurson, Neil Jonathan. "Growth and structure at metal-semiconductor interfaces." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388320.
Повний текст джерелаRouvière, Jean-Luc. "Structure atomique des joints de grains de flexion d'axe <001> dans le silicium et le germanium." Grenoble 1, 1989. http://www.theses.fr/1989GRE10010.
Повний текст джерелаMakineni, Anil Kumar. "Construction and realisation of measurement system in a radiation field of 10 standard suns." Thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-17209.
Повний текст джерелаGregory, David. "Charge transfer studies of alkali-metal/semiconductor interfaces." Thesis, University of Liverpool, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240051.
Повний текст джерелаUnsworth, Paul. "Spectroscopic studies of metal alloys and semiconductor interfaces." Thesis, University of Liverpool, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343647.
Повний текст джерелаWang, Zhiqiang. "Studies of the liquid metal and semiconductor interfaces /." The Ohio State University, 1989. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487676261010274.
Повний текст джерелаSchuerlein, Thomas John. "Chemisorption in organic semiconductor systems: Investigation of organic semiconductor-organic semiconductor and organic semiconductor-metal interfaces." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187068.
Повний текст джерелаSun, Zhuting. "Electron Transport in High Aspect Ratio Semiconductor Nanowires and Metal-Semiconductor Interfaces." University of Cincinnati / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1479821421998919.
Повний текст джерелаTodescato, Francesco. "Functional dielectric/semiconductor and metal/semiconductor interfaces in organic field-effect transistors." Doctoral thesis, Università degli studi di Padova, 2007. http://hdl.handle.net/11577/3425125.
Повний текст джерелаMüller, Kathrin. "Organic semiconductor interfaces with insulators and metals." Göttingen Cuvillier, 2009. http://d-nb.info/997890533/04.
Повний текст джерела凌志聰 and Chi-chung Francis Ling. "Positron beam studies of the metal-GaAs (110) interface." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1994. http://hub.hku.hk/bib/B31211689.
Повний текст джерелаLing, Chi-chung Francis. "Positron beam studies of the metal-GaAs (110) interface /." [Hong Kong : University of Hong Kong], 1994. http://sunzi.lib.hku.hk/hkuto/record.jsp?B13781443.
Повний текст джерелаWang, Chenggong. "Interface Studies of Organic/Transition Metal Oxide with Organic Semiconductors and the Interfaces in the Perovskite Solar Cell." Thesis, University of Rochester, 2015. http://pqdtopen.proquest.com/#viewpdf?dispub=3723336.
Повний текст джерелаIn recent decades, research and development of organic based semiconductor devices have attracted intensive interests. One of the most essential elements is to understand the electronic structures at various interfaces involved in these devices since the interface properties control many of the critical electronic processes. It is thus necessary to study the electronic properties of the organic semiconductors with surface analytical tools to improve the understanding of the fundamental mechanisms involved in the interface formation. This thesis covers the experimental investigations on some of the most interesting topics raised in the recent development of organic electronic devices. The thesis intends to reveal the physical processes at the interface and their contribution to the device performance with photoemission and inverse photoemission investigations on the evolution of the occupied and unoccupied electronic structures. I will report a substantial difference in the electron affinity of CuPc on two substrates as the orientations of CuPc are different. I will also illustrate that the CuPc has standing up configuration on one monolayer of C60 on SiO2 while lying down on one monolayer of C60 on HOPG. Meanwhile, the CuPc on more than one monolayers of C60 on different substrates show that the substrate orientation effect vanished. Then I will propose a two-stage model to describe the bulk doping effect of C60 by molybdenum oxide. I will also demonstrate that the doping effect of C60 by ultra-thin layer molybdenum oxide is weaker than that by interface doping and bulk doping. I will demonstrate that for Au on CH3NH3PbI3, hole accumulation occurs at the vicinity of the interface, facilitating hole transfer from CH3NH3PbI3 to Au. I will show a strong initial shift of core levels to lower binding energy in C60 on CH3NH3PbI3 interface, which indicates that electrons transfer from the perovskite film to C60 molecules. I will further demonstrate that the molybdenum oxide surface can be passivated by approximately two monolayers of organic thin films against exposure to air. I will discuss the mechanism that how oxygen plasma treatment effectively recover the high work function drop of molybdenum oxide by air exposure. At the end, I will show that a small energy offset at Pentacen/C60 heterojunction makes it easy to transfer electrons from Pentacene to C60 even under a small applied bias, facilitating the occurrence of charge generation. Finally, I will summarize the thesis.
Kiely, C. J. "An electron microscopy study of some metal-semiconductor interfaces." Thesis, University of Bristol, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375011.
Повний текст джерелаAnandan, C. "Metal contacts to undoped a-Si:H: interface modification and Scottky barrier characteristics." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314636.
Повний текст джерелаEsfandiari, Hossein. "Ion beam mixing of nickel and cobalt films on silicon." Thesis, University of Salford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304593.
Повний текст джерелаO'Keefe, Matthew Francis. "Optimisation of contacts for indium phosphide millimetre-wave devices." Thesis, University of Leeds, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277202.
Повний текст джерелаBlomfield, Christopher James. "Study of surface modifications for improved selected metal (II-VI) semiconductor based devices." Thesis, Sheffield Hallam University, 1995. http://shura.shu.ac.uk/19362/.
Повний текст джерела李加碧 and Stella Li. "Interface state generation induced by Fowler-Nordheim tunneling in mosdevices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221403.
Повний текст джерелаRazgoniaeva, Natalia Razgoniaeva. "Photochemical energy conversion in metal-semiconductor hybrid nanocrystals." Bowling Green State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1465822519.
Повний текст джерелаWu, Zhenghui. "Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.
Повний текст джерелаLi, Stella. "Interface state generation induced by Fowler-Nordheim tunneling in mos devices /." Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B20566487.
Повний текст джерелаANTOINE, ANNE-MARIE. "Mecanismes de croissance et de constitution d'interfaces dans les couches minces de semiconducteurs amorphes hydrogenes etudies par ellipsometrie spectroscopique in situ." Paris 7, 1987. http://www.theses.fr/1987PA077179.
Повний текст джерела胡一帆 and Yi-fan Hu. "Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1997. http://hub.hku.hk/bib/B31215312.
Повний текст джерелаHu, Yi-fan. "Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces /." Hong Kong : University of Hong Kong, 1997. http://sunzi.lib.hku.hk/hkuto/record.jsp?B19036620.
Повний текст джерелаZhu, Xingguang Williams John R. "Alternative growth and interface passivation techniques for SiO2 on 4H-SiC." Auburn, Ala, 2008. http://hdl.handle.net/10415/1494.
Повний текст джерелаMaxisch, Thomas. "Ab initio study of interface states at metal contacts to III-IV semiconductors /." Lausanne, 2003. http://library.epfl.ch/theses/?display=detail&nr=2890.
Повний текст джерела