Готові списки джерел за темами / Semiconductor invertor

Добірка наукової літератури з теми "Semiconductor invertor"

Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 травня 2022

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Статті в журналах з теми "Semiconductor invertor"

Stepenko, Serhii, Oleksandr Husev, Dmitri Vinnikov, Carlos Roncero-Clemente, Sergio Pires Pimentel, and Elena Santasheva. "Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications." Energies 12, no. 13 (June 28, 2019): 2509. http://dx.doi.org/10.3390/en12132509.

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The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal–Oxide–Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.

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S, Nagashree, and Mrs G. Shashikala. "Design of a Controller Algorithm for Cascaded H- Bridge Multilevel Inverter System for Reduced THD and Improved Performance." International Journal for Research in Applied Science and Engineering Technology 10, no. 5 (May 31, 2022): 2467–70. http://dx.doi.org/10.22214/ijraset.2022.42823.

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Abstract: Multi-level inverter have huge advantages than the conventional inverter. This paper proposes 17 level cascaded multilevel inverter with minimum number of semiconductor switches and DC sources. A new controller is designed to trigger the switches of semiconductor devices to obtained the required output. To control the switching sequence of the metal oxide semiconductor field effect transistor(MOSFET) an embedded code is developed. 3- level, 5 -level ,17 -level and 27 -level cascaded H Bridge multi-level inverters are modelled on MATLAB/SIMULINK and Total Harmonic distortion (THD) of each level are compared to show the improved performance. Keywords: H-bridge, multilevel inverter, symmetrical DC-sources, asymmetrical H bridge topology

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Janiga, Srinivas Rao, and Suresh Kumar Tummala. "7-Level Semi Cross Switched Multilevel Inverter Fed Induction Motor Drive." E3S Web of Conferences 184 (2020): 01075. http://dx.doi.org/10.1051/e3sconf/202018401075.

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Multilevel inverters have more prominent features than 2-level inverter due to various advantages like voltage quality, low EMI etc. The semi cross switched multilevel converter topology need less number of semiconductor switches compared to cascaded H-bridge multilevel inverter, and can be implemented to any number of voltage levels. The operating modes of 7-level semi cross switched multi level inverter are discussed. Three phase seven level inverter fed induction motor is implemented in MATLAB/SIMULINK.

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Jayakumar, Vinoth, and Bharatiraja C. "Model Predictive Control of PMSM Motor Drive for Electric Vehicle Applications with Space Vector Modulation." ECS Transactions 107, no. 1 (April 24, 2022): 14465–72. http://dx.doi.org/10.1149/10701.14465ecst.

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The Multi-Level Inverters (MLI) are most predominantly used in industrial applications as they reduce dv/dt ratio, switching stress of the power semiconductor switches, etc. The industries are slowly shifting from three phase inverters to five phase inverters as they produce lower current per phase, less switching losses, low Common Mode Voltage (CMV), etc. The Space Vector Modulation (SVM) is one of the controlling techniques for driving the inverters which reduces the Total Harmonic Distortion (THD) and improves the dc link balancing. The switching vectors available for five phase Three Level (3L) Neutral Point Clamped (NPC) Inverter is 243 vectors, out of which 51 vectors are selected that produce zero CMV. The controlling of the inverter is done by Model Predictive Control (MPC) Technique in which the error is reduced. The performance of the inverter is evaluated through MATLAB Simulink.

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Dr. Sujatha Balaraman,, P. Yogini. "Three Phase Eleven Level Modular Multilevel Inverter with PD-PWM for Grid Connected System." International Journal for Modern Trends in Science and Technology, no. 8 (August 7, 2020): 86–91. http://dx.doi.org/10.46501/ijmtst060816.

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The prominence of Modular Multilevel Inverters (MMI) is rising owing their merits of simple mechanical construction and good voltage sharing for semiconductor devices. Mostly Multilevel Inverters use more than one source; however, the effective use of all the sources at all levels is rare. Conventional Multilevel Inverters will diminish the energy efficiency of the conversion system. When compared to conventional multilevel inverter, Modular Multilevel Inverter with a high numbers of voltage levels seem to be the most suitable because of the use of an isolated dc source. This paper explores a three-phase eleven level modular multilevel inverter with phase disposition pulse width modulation technique (PD-PWM) that can extract power from all the sources at all the levels. Besides, this paper develops a synchronous d-q reference frame controller to control the current of 11kV. When compared with Reduced Switch Count based Multilevel Inverter Series/Parallel switching topologies, the Modular Multilevel Inverter provides better Total Harmonic Distortion (THD) of output voltage and utilization factor.

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Liu, Peng Kun, Wei Jiang, and Hui Jun Ren. "Faults Location of Cascaded Inverter Based on Artificial Intelligence." Applied Mechanics and Materials 575 (June 2014): 635–39. http://dx.doi.org/10.4028/www.scientific.net/amm.575.635.

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Cascaded H-bridges inverter has been gaining its ground in recent years because it can satisfy high voltage and power applications with medium volume semiconductors; however, it uses much more semiconductors than the traditional inverters which would increase the fault possibilities. Just because this case Cascaded H-bridges inverter is limited in many important industrial fields. In this paper, we, firstly, discussed the basic unit of Cascaded H-bridges inverter (namely, full-bridge inverter) and classify its inner faults, then we proposed a method to spot the faulty IGBT using neural network. We have also done lots of jobs on this fields which could be seen in the papers of our team.

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Hassan, M. S., Tanemasa Asano, Masahito Shoyama, and Gamal M. Dousoky. "Performance Investigation of Power Inverter Components Submersed in Subcooled Liquid Nitrogen for Electric Aircraft." Electronics 11, no. 5 (March 7, 2022): 826. http://dx.doi.org/10.3390/electronics11050826.

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Investigating the performance of power electronics devices and thus power inverters at cryogenic temperatures for electric aircraft systems are of great interest. Accordingly, the purpose of this study is to examine the inverter circuit technologies used in cryogenically-cooled electric aircraft applications from three perspectives: inverter topologies, power capabilities, and electromagnetic interference (EMI) that may occur. At a cryogenic temperature, the characteristics of five power semiconductor switches with different technologies (Si MOS, SiC MOS, and GaN HEMT) used in cryogenically-cooled electric aircraft inverters were tested and the results were presented. Furthermore, the low-temperature performance of three types of capacitors commonly used in power electronics inverters was investigated. The research findings provide crucial considerations for the research and development of power inverters cooled by sub-cooled liquid nitrogen for modern electric aircraft.

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Kumar, Sandeep, and Abhimanyu Kumar. "A Review on PWM Based Multicarrier Multilevel Inverter with Reduced Number of Switches." SMART MOVES JOURNAL IJOSCIENCE 6, no. 7 (March 28, 2020): 24–31. http://dx.doi.org/10.24113/ijoscience.v6i7.309.

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With increasing demand for high power energy which is fulfilled by use of semiconductors with higher voltage and current to execute such applications. In order to derive high power from medium power-based semiconductors, multilevel inverters are considered to be best solution with advantages over conventional resources. An advanced multi-level inverter topology is offered to optimize the number of switches and improve THD.

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Tripathi, Prabhat R., V. Laxmi, Ritesh K. Keshri, Bhargav Appasani, and Taha Selim Ustun. "A Novel Fundamental Frequency Switching Operation for Conventional VSI to Enable Single-Stage High-Gain Boost Inversion with ANN Tuned QWS Controller." Electronics 10, no. 20 (October 14, 2021): 2499. http://dx.doi.org/10.3390/electronics10202499.

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Single-stage high-gain inverters have recently gained much research focus as interfaces for inherent low voltage DC sources such as fuel cells, storage batteries, and solar panels. Many impedance-assisted inverters with different input stage configurations have been presented. To decrease passive component sizes, these inverters operate at high-frequency switching. The high-frequency switching optimizes the passive component sizes but introduces many challenges in the form of high-frequency inductor design, control complexity, high-frequency gate driver requirements, high semiconductor losses, and electromagnetic interferences. This article proposes a novel fundamental frequency switching operation for the conventional voltage source inverters (VSI) to operate as a single-stage high-gain inverter. As the novel operational strategy changes the behavior of conventional VSI from buck inverter to a boost inverter, it is hereafter termed as a novel inverter. By virtue of the operation strategy, switches withstand peak inverse voltage (PIV) equal to DC link voltage, unlike other impedance assisted boost inverters where PIV across switches is the amplified DC voltage. The proposed inverter can invert low-level DC voltage to high voltage AC with low total harmonic distortion (THD) in a single stage without the help of any external filter. A novel quarter-wave symmetric phase-shift controller is proposed for variable voltage and frequency control of proposed inverters tuned by a back-propagation thin-plate-spline neural network (BPTPSNN). Mathematical analysis with experimental validation is presented. Experimentation is carried out on a prototype of 2 kW for single-phase resistive load, induction motor, and non-linear loads.

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Дисертації з теми "Semiconductor invertor"

Frenzel, Heiko. "ZnO-based metal-semiconductor field-effect transistors." Doctoral thesis, Universitätsbibliothek Leipzig, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-61957.

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Die vorliegende Arbeit befasst sich mit der Entwicklung, Herstellung und Untersuchung von ZnO-basierten Feldeffekttransistoren (FET). Dabei werden im ersten Teil Eigenschaften von ein- und mehrschichtigen Isolatoren mit hohen Dielektrizitätskonstanten betrachtet, die mittels gepulster Laserabscheidung (PLD) dargestellt wurden. Die elektrischen und kapazitiven Eigenschaften dieser Isolatoren innerhalb von Metall-Isolator-Metall (MIM) bzw. Metall-Isolator-Halbleiter (MIS) Übergängen wurden untersucht. Letzterer wurde schließlich als Gate-Struktur in Metall-Isolator-Halbleiter-FET (MISFET) mit unten (backgate) bzw. oben liegendem Gate (topgate) genutzt. Der zweite Teil konzentriert sich auf Metal-Halbleiter-FET (MESFET), die einen Schottky-Kontakt alsGate nutzen. Dieser wurde mittels reaktiver Kathodenzerstäubung (Sputtern) von Ag, Pt, Pd oder Au unter Einflußvon Sauerstoff hergestellt. ZnO-MESFET stellen eine vielversprechende Alternative zu den bisher in der Oxid-basierten Elektronik verwendeten MISFET dar. Durch die Variation des verwendeten Gate-Metalls, Dotierung, Dicke und Struktur des Kanals und Kontakstruktur, wurde ein Herstellungsstandard gefunden, der zu weiteren Untersuchungen herangezogen wurde. So wurde die Degradation der MESFET unter Belastung durch dauerhaft angelegte Spannung, Einfluss von Licht und erhöhten Temperaturen sowie lange Lagerung getestet. Weiterhin wurden ZnO-MESFET auf industriell genutztem Glasssubstrat hergestellt und untersucht, um die Möglichkeit einer großflächigen Anwendung in Anzeigeelementen aufzuzeigen. Einfache integrierte Schaltungen, wie Inverter und ein NOR-Gatter, wurden realisiert. Dazu wurden Inverter mit sogenannten Pegelschiebern verwendet, welche die Ausgangsspannung des Inverters so verschieben, dass eine logische Aneinanderreihungvon Invertern möglich wird. Schließlich wurden volltransparente MESFET und Inverter, basierend auf neuartigen transparenten gleichrichtenden Kontakten demonstriert.

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Yatim, Abdul Halim bin Mohamed. "A microprocessor controlled three-phase insulated gate transistor PWM inverter drive." Thesis, University of Bradford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292639.

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Baird, John Malcolm Edward. "A micro processor based A.C. drive with a Mosfet inverter." Thesis, Cape Technikon, 1991. http://hdl.handle.net/20.500.11838/1119.

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Thesis (Masters Diploma (Electrical Engineering)--Cape Technikon, Cape Town,1991
A detailed study into the development of a three phase motor drive, inverter and microprocessor controller using a scalar control method. No mathematical modelling of the system was done as the drive was built around available technology. The inverter circuit is of a Vo~tage source inverter configuration whicp uses MOSFETs switching at a base frequency of between 1.2 KHz and 2 KHz. Provision has been made for speed control and dynamic braking for special applications, since the drive is not going to be put into a specific application as yet, it was felt that only a basic control should be implemented and space should be left for special requests from prospective customers. The pulses for the inverter are generated from the HEF 4752 I.e. under the control of the micro processor thus giving the processor full control over the inverter and allowing it to change almost any parameter at any time. Although the report might seem to cover a lot of unimportant ground it is imperative that the reader is supplied with the back-ground information in order to understand where A.e. drives failed in the past and where A.e. drives are heading in the future. As well as where this drive seeks to use available technology to the best advantage.

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Zhu, Qing. "Semiconductor vertical quantum structures self-formed in inverted pyramids /." Lausanne : EPFL, 2008. http://library.epfl.ch/theses/?nr=4145.

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Thèse Ecole polytechnique fédérale de Lausanne EPFL, no 4145 (2008), Faculté des sciences de base SB, Programme doctoral Physique, Institut de photonique et d'électronique quantiques IPEQ (Laboratoire de physique des nanostructures LPN). Dir.: Elyahou Kapon.

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Sánchez, López José Guadalupe. "Fabrication, characterization and modeling of high efficiency inverted polymer solar cells." Doctoral thesis, Universitat Rovira i Virgili, 2018. http://hdl.handle.net/10803/664722.

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Els avenços en les tecnologies d'energia renovable encara permeten obtenir bons rendiments amb un cost menor que els preus dels combustibles fòssils. L'energia fotovoltaica (cèl·lules solars) és la tecnologia d'energia solar més desenvolupada pel fet que converteix directament l'energia de la llum solar en electricitat. Les cèl·lules solars orgàniques basades en polímers: materials de fullerne (PSC) es consideren una font d'energia prometedora de baix cost. Avui dia, els PSC han d'exhibir alta eficiència, llarga vida útil, fabricació de baix cost i qualitats amigables amb el medi ambient per a la seva comercialització a gran escala. Aquí es va descriure la fabricació, el modelatge i la caracterització de cèl·lules solars orgàniques basades en polímers amb arquitectura invertida (iPSCs). La tesi se centra en l'estudi de la millora simultània de l'eficiència i l'estabilitat a llarg termini dels iPSCs basats en polímers: fullerens. Els polímers PTB7 i PTB7-Th es van usar com materials donants d'electrons, mentre que el fullereno PC70BM es va usar com a acceptor d'electrons. Es van usar òxid de zinc (ZnO) i òxid de titani (TiOx) com capes de transport d'electrons (ETL), a més es va usar PFN per a propòsits de comparació. Tots els dispositius iPSC es van caracteritzar per mètodes òptics, elèctrics i fotofísics per tal de comprendre els mecanismes de pèrdua involucrats en el procés de degradació. Es van usar models de circuits equivalents per analitzar les característiques de J-V en la foscor i es van usar dades d'impedància espectroscòpica per identificar l'origen dels mecanismes de pèrdua. En aquesta tesi es van demostrar cèl·lules solars orgàniques d'alta eficiència i estables basades en PTB7: PC70BM i PTB7-Th: PC70BM amb arquitectura invertida. A més, el TiOx utilitzat com a capa de transport d'electrons és crucial per millorar l'eficiència i l'estabilitat dels iPSCs. Finalment, també es va demostrar que les capes de ZnO dipositades mitjançant impressió per raig de tinta es poden aplicar amb èxit a la fabricació de iPSCs d'alta eficiència a escala de laboratori.
Los avances en tecnologías de energía renovable permiten obtener buenos rendimientos con un costo menor que los precios de los combustibles fósiles. La fotovoltaica es la tecnología de energía solar más desarrollada debido a que convierte directamente la energía de la luz solar en electricidad. Las células solares orgánicas basadas en polímeros: materiales de fullereno (PSC) se consideran una fuente de energía prometedora de bajo costo. Hoy en día, PSC deben exhibir alta eficiencia, larga vida útil, fabricación de bajo costo y cualidades amigables con el medio ambiente para su comercialización a gran escala. Aquí se describió la fabricación,modelado y caracterización de células solares orgánicas basadas en polímeros con arquitectura invertida (iPSCs). La tesis se centra en el estudio de mejoras simultáneas de la eficiencia y estabilidad a largo plazo de iPSCs basados en polímeros: fullerenos. Los polímeros PTB7 y PTB7-Th se usaron como materiales donantes de electrones, mientras que el PC70BM se usó como aceptor de electrones. Se usaron óxido de zinc (ZnO) y titanio (TiOx) como capas de transporte de electrones (ETL), además se usó PFN para propósitos de comparación. Todos los dispositivos iPSC se caracterizaron por métodos ópticos, eléctricos y fotofísicos con el fin de comprender mecanismos de pérdida involucrados en el proceso de degradación. Se usaron modelos de circuitos equivalentes para analizar las características de J-V en oscuridad y se usaron datos de impedancia espectroscópica para identificar el origen de los mecanismos de pérdida. En esta tesis se demostraron células solares orgánicas de alta eficiencia estables basadas en PTB7: PC70BM y PTB7-Th: PC70BM con arquitectura invertida. Además, TiOx utilizado como capa transportadora de electrones crucial para mejorar la eficiencia y la estabilidad de los iPSCs. Finalmente, también se demostró que las capas de ZnO depositadas mediante impresión por chorro de tinta se pueden aplicar con éxito para fabricación de iPSCs de alta eficiencia a escala de laboratorio.
The advances on the renewable energy technologies still allow obtaining good performances with lower cost than fossil fuel prices. Photovoltaics (solar cells) is the most developed solar energy technology due to converts directly the sunlight energy into electricity. The organic solar cells based on polymer:fullerne materials (PSCs) are considered as a promising low-cost energy source. Nowadays, the PSCs must exhibit high efficiency, long lifetime, low-cost fabrication, and environmentally friendly qualities for their large-scale commercialization. Herein the fabrication, modelling and characterization of polymer-based organic solar cells with inverted architecture (iPSCs) were described. The thesis focuses on the study of the simultaneous improvement of efficiency and long-term stability of iPSCs based on polymer:fullerenes. The polymers PTB7 and PTB7-Th were used as electron donor materials, whereas the fullerene PC70BM was used as the electron acceptor. Zinc oxide (ZnO) and titanium oxide (TiOx) were used as electron transport layers (ETL), moreover PFN was used for comparison purposes. All iPSC devices were characterized by optical, electrical and photophysical methods in order to understand the loss mechanisms involved in the degradation process. Equivalent circuit models were used to analyze the J-V characteristics in the dark and impedance spectroscopy data was used to identify the origin of the loss mechanisms. High efficient and stable organic solar cells based on PTB7:PC70BM and PTB7-Th:PC70BM with inverted architecture were demonstrated in this thesis. Moreover, TiOx used as an electron transport layer is crucial for improving the efficiency and the stability of iPSCs. Finally, it was also demonstrated that ZnO layers deposited by inkjet printing can be successfully applied to the fabrication of high efficiency iPSCs at laboratory scale.

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Al-Ahdal, Abdulrahman Ghaleb I. "Floating gate ISFET chemical inverters for semiconductor based biomedical applications." Thesis, Imperial College London, 2012. http://hdl.handle.net/10044/1/9996.

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Ion sensitive field effect transistors (ISFETs) have long been used as analogue chemical sensors particularly for biomedical applications. However, there are some applications where a "yes" / "no" type answer regarding pH change is sufficient. For example, in DNA sequencing the question is whether a chain extension reaction took place or not. Detecting this at the sensing point reduces the sensing process to pH change threshold detection. It eliminates the need for analogue to digital conversion and facilitates an all digital sensory system. This thesis presents Novel Floating Gate ISFET based Chemical Inverters that were created with semiconductor based biomedical applications in mind. It starts by allowing two ISFETs to share the same ion sensing membrane and a common floating gate. Arranging them in a simple FG inverter configuration, their switching may be triggered by either the reference voltage or chemical pH change. In order to enhance its input noise immunity, a chemical Schmitt Trigger is presented. Using ISFETs for the detection of minute pH changes have been a challenge. A simple method to locally scale input referred chemical signal at the ISFET's floating gate is presented. It is based on using the ratio of capacitive coupling to the floating gate. The chemical signal is coupled via the passivation capacitance (Cpass) while an electrical input (V2) is coupled via a poly capacitance (C2). V2 sees the chemical signal with a scaling of Cpass/C2, which can be designed. Finally, ISFETs suffer from initial trapped charges that cause mismatch between devices in the same die. A fast matching method is presented here, that can be used to hugely reduce mismatch of arrays of FG devices. It is based on using indirect bidirectional tunnelling. Two tunnelling structures are added to each ISFET's FG, one adds electrons to it while the other removes them. It is possible to match all ISFETs' initial FG voltages to a point where both tunnelling currents reach equilibrium.

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Moghadam, Mansour Salehi. "Current-source-based low frequency inverter topology." Thesis, Brunel University, 2016. http://bura.brunel.ac.uk/handle/2438/12750.

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A DC to AC inverter can be classified in different topologies; some of these topologies are three level and multilevel inverter. Both types have some advantages and disadvantages. Three level inverters can be applied for low power applications because it is cheaper and has less semiconductor losses at high switching frequencies with poor total harmonic distortion (THD). Multilevel inverters (MLI) can be applied for higher power applications with less THD. However, the MLI has more cost and conductive power losses in comparison with three level inverters. In order to overcome the limitations of three and multilevel topologies, this thesis presents a new controlling topology of multilevel DC/AC inverters. The proposed multilevel inverter topology is based on a current source inverter, which consists of a buck/boost, boost and flyback converters, and an H-bridge inverter. The output voltage of the inverter is shaped through the control of just one main semiconductor switch. This new topology offers almost step-less output voltage without the need for multi DC source or several capacitor banks as in the case of other multilevel inverter topologies. The efficiency of the proposed topology is higher than other inverter topologies for medium power applications (2-10 kW). The proposed topology also generates smaller Total Harmonic Distortion (THD) compared to other inverter topologies. The two main key aspects of the proposed circuit is to keep the switching losses as low as possible and this is achieved through the control of a single switch at relatively low frequency and also to generate an improved AC Voltage waveform without the need for any filtering devices. The output frequency and voltage of the proposed circuit can be easily controlled according to the load requirements. The proposed inverter topology is ideal for the connection of renewable energy; this is due to its flexibility in varying its output voltage without the need of fixed turns-ratio transformers used in existing DC/AC inverter topologies. The harmonic contents of the output of this proposed topology can be controlled without the need of any filter. The simulation and practical implementation of the proposed circuits are presented. The practical and simulation results show excellent correlation.

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Thomschke, Michael. "Inverted Organic Light Emitting Diodes." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-106255.

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This study focuses on the investigation of the key parameters that determine the optical and electrical characteristics of inverted top-emitting organic light emitting diodes (OLED). A co-deposition of small molecules in vacuum is used to establish electrically doped films that are applied in n-i-p layered devices. The knowledge about the functionality of each layer and parameter is important to develop efficient strategies to reach outstanding device performances. In the first part, the thin film optics of top-emitting OLEDs are investigated, focusing on light extraction via cavity tuning, external outcoupling layers (capping layer), and the application of microlens films. Optical simulations are performed to determine the layer configuration with the maximum light extraction efficiency for monochrome phosphorescent devices. The peak efficiency is found at 35%, while varying the thickness of the charge transport layers, the semitransparent anode, and the capping layer simultaneously. Measurements of the spatial light distribution validate, that the capping layer influences the spectral width and the resonance wavelength of the extracted cavity mode, especially for TM polarization. Further, laminated microlens films are applied to benefit from strong microcavity effects in stacked OLEDs by spatial mixing of external and to some extend internal light modes. These findings are used to demonstrate white top-emitting OLEDs on opaque substrates showing power conversion efficiencies up to 30 lm/W and a color rendering index of 93, respectively. In the second part, the charge carrier management of n-i-p layered diodes is investigated as it strongly deviates from that of the p-i-n layered counterparts. The influence of the bottom cathode material and the electron transport layer is found to be negligible in terms of driving voltage, which means that the assumption of an ohmic bottom contact is valid. The hole transport and the charge carrier injection at the anode is much more sensitive to the evaporation sequence, especially when using hole transport materials with a glass transition temperature below 100°C. As a consequence, thermal annealing of fabricated inverted OLEDs is found to drastically improve the device electronics, resulting in lower driving voltages and an increased internal efficiency. The annealing effect on charge transport comes from a reduced charge accumulation due to an altered film morphology of the transport layers, which is proven for electrons and for holes independently. The thermal treatment can further lead to a device degradation. Finally, the thickness and the material of the blocking layers which usually control the charge confinement inside the OLED are found to influence the recombination much more effectively in inverted OLEDs compared to non-inverted ones.

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Vrazel, Michael Gerald. "Investigation of InGaAs/InP inverted MSM photodetectors for alignment tolerant photoreceiver applications." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13849.

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Quezada, Novoa Andrés Alberto. "Diseño e implementación de inversor fotovoltaico de bajo costo." Tesis, Universidad de Chile, 2012. http://www.repositorio.uchile.cl/handle/2250/112523.

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Ingeniero Civil Electricista
El presente trabajo aborda los conceptos básicos, sobre electrónica, semiconductores de potencia, controladores digitales de señales y software de simulación en electrónica de potencia, para lograr diseñar y construir un inversor MPPT fotovoltaico de 2kW de potencia nominal que sirva como base para desarrollos en esta área. Se presenta una introducción al tema, los objetivos de la memoria y una breve descripción del estado del arte, conocimientos necesarios para desarrollar un equipo de estas características. En función de estos antecedentes se presenta el diseño y simulación de la primera etapa de conversión, correspondiente al módulo Boost, utilizado para realizar un seguimiento de máxima potencia al sistema fotovoltaico. A continuación, se muestra la segunda etapa de conversión, de corriente continua a alterna, mediante un puente inversor completo. Se diseñan los sensores a utilizar, que son de voltaje DC, voltaje AC, corriente y temperatura. Se presenta el diseño de las etapas necesarias de control realimentado, que se programan en un microcontrolador. Esta etapa incluye la determinación de la tensión de máxima transferencia, se sincroniza el inversor con la red y se limita el trabajo del equipo dentro de rangos seguros de operación. Con el software PSim, se simula cada etapa de conversión de potencia, lo que permite realizar un diseño rápido y seguro. Se logra probar los ciclos de control diseñados para el sistema y ver el tipo de comportamiento ante perturbaciones. Se presenta en detalle la fase de construcción de cada uno de los módulos diseñados, reportando los planos, dispositivos y elementos de integración. Se realizan pruebas de potencia para el módulo Boost y el Inversor, ajustando los sensores. Por último se realizan pruebas de control realimentado como seguidor de tensión y seguidor de fase. Se finaliza con los resultados de las características relevantes del equipo, como lo son la eficiencia (80%) y costo de construcción estimado ($1466 US), para luego realizar un análisis de recuperación del capital en base a la energía generada. Como trabajo futuro se requiere de las pruebas de inyección de potencia a la red y de transferencia de máxima potencia conectando un panel fotovoltaico como fuente primaria de energía.

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Книги з теми "Semiconductor invertor"

Baumann, E. D. Operational characteristics of a 200⁰C LC parallel resonant circuit. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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N, Hammoud Ahmad, and United States. National Aeronautics and Space Administration., eds. Operational characteristics of a 200b□-s□p0b□-s□sC LC parallel resonant circuit. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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Частини книг з теми "Semiconductor invertor"

Hoft, Richard G. "Transistor Inverters." In Semiconductor Power Electronics, 110–25. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4_6.

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Hoft, Richard G. "Self-Commutated Thyristor Inverters." In Semiconductor Power Electronics, 239–68. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4_11.

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Hoft, Richard G. "Phase-Controlled Rectifiers and Line-Commutated Inverters." In Semiconductor Power Electronics, 126–66. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4_7.

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Tigelaar, Howard. "Semiconductors, Diodes, Transistors, and Inverters." In How Transistor Area Shrank by 1 Million Fold, 21–50. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-40021-7_3.

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Chang, Yia-Chung. "Inverted Ordering of Acceptor Bound Exciton States in Semiconductors." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 601–4. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_132.

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Gerstenmaier, Y. C., and E. Baudelot. "Investigation of GTO Turn-on in an Inverter Circuit at Low Temperatures using 2-D Electrothermal Simulation." In Simulation of Semiconductor Devices and Processes, 364–67. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_89.

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Nefedov, I., and A. Andronov. "Monte-Carlo simulation of inverted hot carrier distribution under strong carrier-optical phonon scattering." In Simulation of Semiconductor Devices and Processes, 325–27. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_79.

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Kim, Young-Choon, Ho-Bin Song, Moon-Taek Cho, Chung-Sik Lee, Ok-Hwan Kim, and Sung-Young Park. "A Study on the Improved Stability of Inverter through History Management of Semiconductor Elements for Power Supply." In Computer Applications for Software Engineering, Disaster Recovery, and Business Continuity, 155–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-35267-6_20.

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Mountrichas, Lampros, Thomas Noulis, and Stylianos Siskos. "Synthesizable Inverter-Based Analog Processor for Radiation Detection Read-Out Front Ends." In Semiconductor Radiation Detectors, 133–56. CRC Press, 2017. http://dx.doi.org/10.1201/9781315200729-6.

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Ginart, Antonio, José M. Aller, and George J. Vachtsevanos. "Early diagnosis in power semiconductors: MOSFET, IGBT, emerging materials (SiC and GaNs)." In Fault Diagnosis for Robust Inverter Power Drives, 34–67. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbpo120e_ch2.

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Тези доповідей конференцій з теми "Semiconductor invertor"

Lage A. Dias, André, Renan F. Bastos, Yasmine N. Maia, and Luciano G. Cota. "Projeto e Implementação de um Inversor Monofásico Grid-Tie de Baixo Custo para Sistema de Geração Fotovoltaica." In Congresso Brasileiro de Automática - 2020. sbabra, 2020. http://dx.doi.org/10.48011/asba.v2i1.1402.

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Um inversor é um conversor de potência capaz de transformar sinais de corrente contínua em sinais de corrente alternada. Os inversores que operam nos sistemas de geração distribuída conectados à rede elétrica são comumente chamados de on-grid ou grid-tie. Neste trabalho são abordadas as etapas de projeto e implementação da bancada experimental de um inversor monofásico grid-tie de 900VA, utilizando o driver FNA41560 de baixo custo da Fairchild Semiconductor. A partir de ensaios práticos foi possível comparar resultados reais e simulados. Para o sincronismo com a rede elétrica foi utilizado um PLL (Phase-Locked Loop). O sistema foi controlado em malha fechada a partir de um controlador PIR (Proporcional-Integral-Ressonante), além disso, o projeto conta também com um algoritmo MPPT (Busca do Ponto de Máxima Potência) aplicado ao arranjo de painéis fotovoltaicos.

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Olejniczak, Kraig J., Tom Flint, David Simco, Sergei Storkov, Brad McGee, Kenny George, Peter Killeen, et al. "System-Level Packaging of Wide Bandgap Inverters for Electric Traction Drive Vehicles." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48602.

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In this paper, we describe the system-level packaging of a 30 kW continuous, 55 kW peak, traction inverter to showcase the electro-thermal-mechanical performance enhancements of silicon carbide (SiC), a wide bandgap (WBG) semiconductor, over silicon. Higher efficiency, larger gravimetric and volumetric power densities, and smaller thermal management system requirements may be achieved through higher operating junction temperatures afforded by SiC versus silicon power devices. By applying advanced system-level packaging techniques, high-temperature control circuitry, utilizing 105°C-rated capacitors, and reducing the number of system interconnects and attaches to enable higher system reliability, a substantial cost reduction from the die level to the system level can be demonstrated by completely eliminating an electric vehicle’s secondary low-temperature cooling loop. The endgame is to reduce the traction inverter size (≥ 13.4 kW [peak]/L), weight (≥ 14.1 kW [peak]/kg), and cost (≤ $182/100,000) relative to output power while maintaining 15-year reliability metrics [1].

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Vieru, Razvan G., and Romeo Ghinea. "Inverter-based ultra low voltage differential amplifiers." In 2011 International Semiconductor Conference (CAS 2011). IEEE, 2011. http://dx.doi.org/10.1109/smicnd.2011.6095811.

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Yadav, Sarita, and Subhasis Ghosh. "Fabrication of organic complementary inverter." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.925101.

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Sekiguchi, Hiroto, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, and Hiroshi Okada. "GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETs." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819079.

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Coleman, J. J. "Patterned semiconductor inverted quantum dot photonic devices." In SPIE OPTO, edited by Sailing He, El-Hang Lee, and Louay A. Eldada. SPIE, 2016. http://dx.doi.org/10.1117/12.2218556.

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Florescu, A., O. Stocklosa, M. Teodorescu, C. Radoi, D. A. Stoichescu, and S. Rosu. "The advantages, limitations and disadvantages of Z-source inverter." In 2010 International Semiconductor Conference (CAS 2010). IEEE, 2010. http://dx.doi.org/10.1109/smicnd.2010.5650503.

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bin Arif, M. Saad, Shahrin Md Ayob, and Zainal Salam. "Asymmetrical multilevel inverter topology with reduced power semiconductor devices." In 2016 IEEE Industrial Electronics and Applications Conference (IEACon). IEEE, 2016. http://dx.doi.org/10.1109/ieacon.2016.8067349.

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Nishi, Koji. "Investigation Regarding Thermal Resistance of Surface Mount Type Discrete Power Semiconductor Package." In ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/ipack2020-2631.

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Abstract Power electronics is becoming more important than before with motor application expansion. For size reduction of inverter integrated motor design, accurate temperature prediction of power devices is becoming critical. For up to several hundred-watt motor system, inverter is designed with discrete power devices with standard package. This paper investigates package thermal resistance of a DPAK package as an example. Firstly, three-dimensional heat conduction simulation only with DPAK package model is conducted. It is found that its package thermal resistance changes by ∼6.2°C/W due to boundary condition variation. After that, simulation not only with DPAK package but also with PCB is conducted to understand package thermal resistance of a real system implementation case. It is found that package thermal resistance varies drastically by copper trace size. “Smallest” case with minimum copper traces shows ∼0.9 °C/W higher value than larger copper trace case and shows ∼1.5 °C/W higher value than the case that copper trace fully covers PCB top surface, in the case that horizontal PCB size is 50 × 50 mm. After that, two types of test boards with different trace size for of n-channel MOSFET with DPAK package are prepared. Measurements are conducted to know package thermal resistance variation by copper trace size. Transient thermal impedance curve is obtained from measurement result and is converted to a cumulative Rth-Cth curve to know and discuss the difference by copper trace size of these two test boards. The difference is also discussed with and compared to that of simulation results.

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Niu, Qinzhou, and Lin Wang. "Real-time Inverter Semiconductor Die Temperature Estimation Using Inverter Operating Condition-based Gate Recurrent Unit." In 2018 9th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2018. http://dx.doi.org/10.1109/pedg.2018.8447642.

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