Добірка наукової літератури з теми "RF Pulse Compressor"
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Статті в журналах з теми "RF Pulse Compressor"
Shu, Guan, Feng-Li Zhao, Shi-Lun Pei, and Ou-Zheng Xiao. "RF modulation studies on an S band pulse compressor." Chinese Physics C 40, no. 3 (March 2016): 037002. http://dx.doi.org/10.1088/1674-1137/40/3/037002.
Повний текст джерелаLi, Zongbin, Wencheng Fang, Qiang Gu, and Zhentang Zhao. "RF design of a C-band compact spherical RF pulse compressor for SXFEL." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 863 (August 2017): 7–14. http://dx.doi.org/10.1016/j.nima.2017.05.017.
Повний текст джерелаKarsli, Ozlem, Avni Aksoy, Caglar Kaya, Burak Koc, Mustafa Dogan, O. Faruk Elcim, and Mehmet Bozdogan. "High power RF operations studies at TARLA facility." Canadian Journal of Physics 97, no. 11 (November 2019): 1171–76. http://dx.doi.org/10.1139/cjp-2018-0778.
Повний текст джерелаShu, Guan, Feng-Li Zhao, and Xiang He. "RF study of a C-band barrel open cavity pulse compressor." Chinese Physics C 39, no. 5 (May 2015): 057005. http://dx.doi.org/10.1088/1674-1137/39/5/057005.
Повний текст джерелаFernandes, P., R. Parodi, C. Salvo, and B. Spataro. "The design of TE storage cavities for a rf pulse compressor system." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 288, no. 2-3 (March 1990): 549–54. http://dx.doi.org/10.1016/0168-9002(90)90151-u.
Повний текст джерелаGolubičić, Zoran, Slobodan Simić, and Aleksa J. Zejak. "Design and EPGA Implementation of Digital Pulse Compression for Band–Pass Radar Signals." Journal of Electrical Engineering 64, no. 3 (May 1, 2013): 191–95. http://dx.doi.org/10.2478/jee-2013-0028.
Повний текст джерелаVAN DER GEER, S. B., O. J. LUITEN, and M. J. DE LOOS. "DESIGN OF A 2 kA, 30 fs RF-PHOTOINJECTOR FOR WATERBAG COMPRESSION." International Journal of Modern Physics A 22, no. 22 (September 10, 2007): 4000–4005. http://dx.doi.org/10.1142/s0217751x07037573.
Повний текст джерелаZhang, Jingru, Cai Meng, Dazhang Li, Dou Wang, Guoxi Pei, Hua Shi, Jie Gao, Xiang He, Xiaoping Li, and Yunlong Chi. "R&D of CEPC injector linac." International Journal of Modern Physics A 36, no. 22 (August 5, 2021): 2142013. http://dx.doi.org/10.1142/s0217751x21420136.
Повний текст джерелаKrainara, Siriwan, Shuya Chatani, Heishun Zen, Toshiteru Kii, and Hideaki Ohgaki. "Manipulation of Laser Distribution to Mitigate the Space-Charge Effect for Improving the Performance of a THz Coherent Undulator Radiation Source." Particles 1, no. 1 (November 7, 2018): 238–52. http://dx.doi.org/10.3390/particles1010018.
Повний текст джерелаJunphong, P., V. Ano, B. Lekprasert, D. Suwannakachorn, Thiraphat Vilaithong, and H. Wiedemann. "Bunch Compression of a Non-Relativistic 280-keV-He+ Beam." Solid State Phenomena 107 (October 2005): 59–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.59.
Повний текст джерелаДисертації з теми "RF Pulse Compressor"
Chatelain, Robert P. 1982. "RF compression of electron bunches applied to ultrafast electron diffraction." Thesis, McGill University, 2008. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=111943.
Повний текст джерелаCosta, Rui Jorge Duarte. "Face detection and recognision." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/21683.
Повний текст джерелаUltimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas de transferência de informação. Com este aumento, embora sejam usados códigos poderosos, também aumenta a largura de banda dos sinais a transmitir, bem como a sua frequência. A maior frequência de operação, bem como a procura por sistemas mais eficientes, tem exigido progressos no que toca aos transístores utilizados nos amplificadores de potência de radio frequência (RF), uma vez que estes são componentes dominantes no rendimento de uma estação base de telecomunicações. Com esta evolução, surgem novas tecnologias de transístores, como os GaN HEMT (do inglês, Gallium Nitride High Electron Mobility Transistor). Para conseguir prever e corrigir certos efeitos dispersivos que afetam estas novas tecnologias e para obter o amplificador mais eficiente para cada transístor usado, os projetistas de amplificadores necessitam cada vez mais de um modelo que reproduza fielmente o comportamento do dispositivo. Durante este trabalho foi desenvolvido um sistema capaz de efetuar medidas pulsadas e de elevada exatidão a transístores, para que estes não sejam afetados, durante as medidas, por fenómenos de sobreaquecimento ou outro tipo de fenómenos dispersivos mais complexos presentes em algumas tecnologias. Desta forma, será possível caracterizar estes transístores para um estado pré determinado não só de temperatura, mas de todos os fenómenos presentes. Ao longo do trabalho vai ser demostrado o projeto e a construção deste sistema, incluindo a parte de potência que será o principal foco do trabalho. Foi assim possível efetuar medidas pulsadas DC-IV e de parâmetros S (do inglês, Scattering) pulsados para vários pontos de polarização. Estas últimas foram conseguidas á custa da realização de um kit de calibração TRL. O interface gráfico com o sistema foi feito em Matlab, o que torna o sistema mais fácil de operar. Com as medidas resultantes pôde ser obtida uma primeira análise acerca da eficiência, ganho e potência máxima entregue pelo dispositivo. Mais tarde, com as mesmas medidas pôde ser obtido um modelo não linear completo do dispositivo, facilitando assim o projeto de amplificadores.
Lately, the wireless networks should feature higher data rates than ever. With this rise, although very powerful codification schemes are used, the bandwidth of the transmitted signals is rising, as well as the frequency. Not only caused by this rise in frequency, but also by the growing need for more efficient systems, major advances have been made in terms of Radio Frequency (RF) Transistors that are used in Power Amplifiers (PAs), which are dominant components in terms of the total efficiency of base stations (BSS). With this evolution, new technologies of transistors are being developed, such as the Gallium Nitride High Electron Mobility Transistor (GaN HEMT). In order to predict and correct some dispersive effects that affect these new technologies and obtain the best possible amplifier for each different transistor, the designers are relying more than ever in the models of the devices. During this work, one system capable of performing very precise pulsed measurements on RF transistors was developed, so that they are not affected, during the measurements, by self-heating or other dispersive phenomena that are present in some technologies. Using these measurements it was possible to characterize these transistors for a pre-determined state of the temperature and all the other phenomena. In this document, the design and assembly of the complete system will be analysed, with special attention to the higher power component. It will be possible to measure pulsed Direct Current Current-Voltage (DC-IV) behaviour and pulsed Scattering (S) parameters of the device for many different bias points. These latter ones were possible due to the development of one TRL calibration kit. The interface with the system is made using a graphical interface designed in Matlab, which makes it easier to use. With the resulting measurements, as a first step analysis, the maximum efficiency, gain and maximum delivered power of the device can be estimated. Later, with the same measurements, the complete non-linear model of the device can be obtained, allowing the designers to produce state-of-art RF PAs.
Частини книг з теми "RF Pulse Compressor"
Biegert, Jens, and Jean-Claude Diels. "Pulse Compression." In Encyclopedia of RF and Microwave Engineering. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/0471654507.eme329.
Повний текст джерелаТези доповідей конференцій з теми "RF Pulse Compressor"
Yakovlev, V. P. "Ferroelectric Switch For An Active RF Pulse Compressor." In HIGH ENERGY DENSITY AND HIGH POWER RF: 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635119.
Повний текст джерелаTantawi, Sami G. "Recent Advances in RF Pulse Compressor Systems at SLAC." In HIGH ENERGY DENSITY AND HIGH POWER RF: 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635118.
Повний текст джерелаVikharev, A. L. "Plasma Switch for X-Band Active SLED-II RF Pulse Compressor." In ADVANCED ACCELERATOR CONCEPTS: Eleventh Advanced Accelerator Concepts Workshop. AIP, 2004. http://dx.doi.org/10.1063/1.1842624.
Повний текст джерелаVikharev, A. L. "High-Power Tests of a Two-Channel X-Band Active RF Pulse Compressor Using Plasma Switches." In HIGH ENERGY DENSITY AND HIGH POWER RF: 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635120.
Повний текст джерелаShlapakovski, Anatoli, Leonid Beilin, Moshe Donskoy, Yakov E. Krasik, and Edl Schamiloglu. "Self-consistent plasma density evolution during RF energy extraction from a microwave pulse compressor." In 2015 IEEE International Conference on Plasma Sciences (ICOPS). IEEE, 2015. http://dx.doi.org/10.1109/plasma.2015.7179958.
Повний текст джерелаHalbout, J. M., S. L. Palfrey, and D. L. Grischkowsky. "Ultrashort compression of amplified optical pulses." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.wz1.
Повний текст джерелаWilson, Perry B. "RF pulse compression for future linear colliders." In Pulsed RF sources for linear colliders. AIP, 1995. http://dx.doi.org/10.1063/1.48415.
Повний текст джерелаMacInnes, P. "RF Pulse Compression Using Helically Corrugated Waveguides." In HIGH ENERGY DENSITY AND HIGH POWER RF: 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158814.
Повний текст джерелаLavine, Theodore L. "RF pulse compression in the NLC test accelerator at SLAC." In Pulsed RF sources for linear colliders. AIP, 1995. http://dx.doi.org/10.1063/1.48414.
Повний текст джерелаVikharev, A. L. "Experiments on Active RF Pulse Compressors Using Plasma Switches." In HIGH ENERGY DENSITY AND HIGH POWER RF: 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158813.
Повний текст джерелаЗвіти організацій з теми "RF Pulse Compressor"
Hirshfield, Jay L. Quasi-Optical 34-GHz Rf Pulse Compressor. Office of Scientific and Technical Information (OSTI), June 2007. http://dx.doi.org/10.2172/908795.
Повний текст джерелаFarkas, Z. D., and J. N. Weaver. RF pulse compression development. Office of Scientific and Technical Information (OSTI), October 1987. http://dx.doi.org/10.2172/5611138.
Повний текст джерелаTantawi, Sami. New Development in RF Pulse Compression. Office of Scientific and Technical Information (OSTI), August 2000. http://dx.doi.org/10.2172/763857.
Повний текст джерелаWilson, P. B., Z. D. Farkas, T. L. Lavine, A. Menegat, C. Nantista, R. D. Ruth, and N. M. Kroll. Progress at SLAC on high-power rf pulse compression. Office of Scientific and Technical Information (OSTI), June 1992. http://dx.doi.org/10.2172/10137398.
Повний текст джерелаNantista, Christopher D. ALTERNATIVE RF PULSE COMPRESSION SYSTEM CONFIGURATIONS FOR LINEAR COLLIDERS. Office of Scientific and Technical Information (OSTI), June 2002. http://dx.doi.org/10.2172/799105.
Повний текст джерелаWilson, P. B., Z. D. Farkas, T. L. Lavine, A. Menegat, C. Nantista, R. D. Ruth, and N. M. Kroll. Progress at SLAC on high-power rf pulse compression. Office of Scientific and Technical Information (OSTI), June 1992. http://dx.doi.org/10.2172/6665078.
Повний текст джерелаTantawi, Sami. The Next Linear Collider Test Accelerator's RF Pulse Compression and Transmission Systems. Office of Scientific and Technical Information (OSTI), February 1999. http://dx.doi.org/10.2172/10192.
Повний текст джерелаGuo, Jiquan. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems. Office of Scientific and Technical Information (OSTI), December 2008. http://dx.doi.org/10.2172/953016.
Повний текст джерелаTantawi, S. Multimoded Reflective Delay Lines and Their Application to Resonant Delay Line RF Pulse Compression Systems. Office of Scientific and Technical Information (OSTI), June 2004. http://dx.doi.org/10.2172/826970.
Повний текст джерелаTantawi, Sami. Development of High Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Linear Colliders. Office of Scientific and Technical Information (OSTI), November 2000. http://dx.doi.org/10.2172/784865.
Повний текст джерела