Статті в журналах з теми "RF Plasma CVD"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: RF Plasma CVD.

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "RF Plasma CVD".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Hay, Stephen O., Ward C. Roman, and Meredith B. Colket. "CVD diamond deposition processes investigation: CARS diagnostics/modeling." Journal of Materials Research 5, no. 11 (November 1990): 2387–97. http://dx.doi.org/10.1557/jmr.1990.2387.

Повний текст джерела
Анотація:
We have applied Coherent Anti-Stokes Raman Spectroscopy (CARS), using a narrowband, scanned colinear configuration, to measure temperatures, relative concentrations, and detect species in low pressure CVD of polycrystalline diamond. CARS measurements were obtained for methane, hydrogen, and acetylene in either or both a rf plasma reactor and a hot filament reactor. In the rf PACVD experiments a mixture of 1% CH4 in H2 was used at a total pressure of 5 torr. The rf power input to the plasma was 300 watts and the H2 and CH4 flow rates were 99 and 1 seem, respectively. As acetylene (C2H2) has been proposed as an intermediate in diamond growth, it was selected for the initial series of measurements. In the absence of rf power, a sensitivity of 5 mtorr was observed; in the plasma downstream of the rf coils, no observable signal attributable to C2H2 was evident. This places an upper limit to conversion of methane to acetylene at 20%, a figure representing the observed sensitivity to C2H2. In the hot filament reactor, the gas flow was 200 sccm of 1% CH4 in H2 at a total pressure of 150 torr. Under these conditions, C2H2 was detectable. Absolute concentrations were not calculated, but the observed spectra are within an order of magnitude of our sensitivity limit. This allows estimation of the C2H2 partial pressure near the substrate as 5–50 mtorr or from 0.66 to 6.6% conversion from methane. In view of this low conversion percentage, the absence of a signal in the rf experiments must be taken as inconclusive. CARS spectra of methane were also obtained in both reactors. In the rf reactor, under similar conditions to those described previously, the methane relative concentration decreased to 25% as the rf power was increased from zero to 400 watts. In the hot filament reactor, CH4 CARS signal profiles were obtained as a function of axial distance from the hot filament, and parametrically as a function of filament temperature. Comparison of these profiles, in which the observed signal decayed monotonically as the filament was approached and increased monotonically downstream of the filament, was made with theoretical calculations. This comparison showed that the fluctuations were attributable to temperature/pressure effects and not to chemistry. To determine if the observed depletion in the rf plasma was similarly attributable, the CARS signal of hydrogen was observed as a function of axial distance downstream of the rf coil centerline and parametrically as a function of rf power. In contrast to expected behavior in the thermal hot filament reactor, little rotational excitation was observed in the plasma. Rotational temperatures were assigned to hydrogen based upon comparison with theoretically derived spectra. At 450 watts of rf power, rotational temperatures of 340 K were observed 4 to 6 cm downstream of the coil, the region where the 25% decrease in CH4 was observed. Little or no density fluctuations accrue due to these temperatures, indicating that the observed depletion in methane signal is attributable to decomposition or chemical reaction in the plasma. In summary, CARS is applicable to reactant species (CH4) axial profiling in both reactors, but can be limited by sensitivity in the detection of intermediate or product species (C2H2). In addition, CARS thermometry can be utilized to profile the rotational temperatures of selected species.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

YAMAMOTO, Masaoki, Masayuki FUKUI, and Takayuki SHIBATA. "Properties of carbonous films synthesized by RF plasma CVD." Journal of the Japan Society for Precision Engineering 55, no. 12 (1989): 2222–27. http://dx.doi.org/10.2493/jjspe.55.2222.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Mannan, Md Abdul, Masamitsu Nagano, Norie Hirao, and Yuji Baba. "Hexagonal BCN Films Prepared by RF Plasma-enhanced CVD." Chemistry Letters 37, no. 1 (January 5, 2008): 96–97. http://dx.doi.org/10.1246/cl.2008.96.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

TSAKADZE, E., K. OSTRIKOV, Z. TSAKADZE, N. JIANG, R. AHMAD, and S. XU. "CONTROL AND DIAGNOSTICS OF INDUCTIVELY COUPLED PLASMAS FOR CHEMICAL VAPOUR DEPOSITION ON NANOCOMPOSITE CARBON NITRIDE-BASED FILMS." International Journal of Modern Physics B 16, no. 06n07 (March 20, 2002): 1143–47. http://dx.doi.org/10.1142/s0217979202011019.

Повний текст джерела
Анотація:
Control and diagnostics of low-frequency (~ 500 kHz) inductively coupled plasmas for chemical vapor deposition (CVD) of nano-composite carbon nitride-based films is reported. Relation between the discharge control parameters, plasma electron energy distribution/probability functions (EEDF/EEPF), and elemental composition in the deposited C-N based thin films is investigated. Langmuir probe technique is employed to monitor the plasma density and potential, effective electron temperature, and EEDFs/EEPFs in Ar + N2 + CH4 discharges. It is revealed that varying RF power and gas composition/pressure one can engineer the EEDFs/EEPFs to enhance the desired plasma-chemical gas-phase reactions thus controlling the film chemical structure. Auxiliary diagnostic tools for study of the RF power deposition, plasma composition, stability, and optical emission are discussed as well.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Inao, Takuro, Masahiko Kumadaki, Kohki Satoh, Masaki Yoshino, and Hidenori Itoh. "Deposition of Boron Nitride Films using RF Plasma CVD Method." IEEJ Transactions on Fundamentals and Materials 134, no. 6 (2014): 397–401. http://dx.doi.org/10.1541/ieejfms.134.397.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Kashem, Abul, Masaki Matsushita, and Shinzo Morita. "RF Plasma CVD of C-S Compound under Hydrogen Dilution." Journal of Photopolymer Science and Technology 13, no. 1 (2000): 47–49. http://dx.doi.org/10.2494/photopolymer.13.47.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Jie, Jiang, and Liu Chenzan. "Diamond-like carbon thin films prepared by rf-plasma CVD." Vacuum 42, no. 16 (1991): 1058. http://dx.doi.org/10.1016/0042-207x(91)91327-k.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

MITSUI, Akira, and Akio KATO. "Preparation of SiC Powders by CVD Method Using RF-Plasma." Journal of the Ceramic Association, Japan 94, no. 1089 (1986): 517–20. http://dx.doi.org/10.2109/jcersj1950.94.1089_517.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Mitomo, Tohru, Tomohiro Ohta, Hiroaki Sasaki, Kenichi Ohtsuka, and Yasuhiro Habu. "Deposition of amorphous-carbon films by RF plasma CVD method." KAGAKU KOGAKU RONBUNSHU 17, no. 2 (1991): 305–12. http://dx.doi.org/10.1252/kakoronbunshu.17.305.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Mitsui, Akira, and Akio Kato. "Preparation of SiC powders by CVD method using RF-plasma." International Journal of High Technology Ceramics 3, no. 1 (January 1987): 85. http://dx.doi.org/10.1016/0267-3762(87)90071-3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
11

Kim, Y. T., B. Hong, G. E. Jang, S. J. Suh, and D. H. Yoon. "Characterization of a-SiC:H Films Deposited by RF Plasma CVD." Crystal Research and Technology 37, no. 2-3 (February 2002): 219–24. http://dx.doi.org/10.1002/1521-4079(200202)37:2/3<219::aid-crat219>3.0.co;2-9.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
12

Suzuki, Keigo, and Kazunori Kijima. "Phase transformation of BaTiO3 nanoparticles synthesized by RF-plasma CVD." Journal of Alloys and Compounds 419, no. 1-2 (August 2006): 234–42. http://dx.doi.org/10.1016/j.jallcom.2005.08.075.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
13

Jonas, Stanisława, Karol Kyzioł, Jerzy Lis, and Katarzyna Tkacz-Śmiech. "Stability of a-C:N:H Layers Deposited by RF Plasma Enhanced CVD." Solid State Phenomena 147-149 (January 2009): 738–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.147-149.738.

Повний текст джерела
Анотація:
A series of amorphous hydrogenated carbon layers doped with nitrogen (a-C:N:H) was deposited on Si (001). The synthesis was performed from gaseous N2/CH4 mixture using PE CVD (RF CVD technique; 13,56 MHz). An influence of the processing conditions on layer-growth rate was analysed. Thickness of the layers deposited during 1 hour at various temperatures, pressures and RF powers were taken as a basis. It has been proved that the substrate temperature is a key parameter for the layer formation. Temperature rise results in the deposition rate decrease. This unfavourable effect may be reduced by application of increased gas pressure and/or higher plasma RF generator power. At optimal conditions (46 oC; 0,8 Tr; 60 W) the deposition rate reaches up to 600 nm/hour. FT-IR spectra of the layers were measured within 1250 - 4000 cm-1 and discussed with regard to the atomic structure. The intensities of the characteristic absorption bands were compared. The results show that the layers have various N/C ratios according to the applied processing conditions.
Стилі APA, Harvard, Vancouver, ISO та ін.
14

Ong, Si Ci, Usman Ilyas, and Rajdeep Singh Rawat. "Nanofabrication using home-made RF plasma coupled chemical vapour deposition system." International Journal of Modern Physics: Conference Series 32 (January 2014): 1460342. http://dx.doi.org/10.1142/s2010194514603421.

Повний текст джерела
Анотація:
Zinc oxide, ZnO , a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication.
Стилі APA, Harvard, Vancouver, ISO та ін.
15

Tsai, C., J. Nelson, W. W. Gerberich, J. Heberlein, and E. Pfender. "Metal reinforced thermal plasma diamond coatings." Journal of Materials Research 7, no. 8 (August 1992): 1967–69. http://dx.doi.org/10.1557/jmr.1992.1967.

Повний текст джерела
Анотація:
A three-step process to produce wear-resistant, composite diamond coatings is presented. Diamonds are deposited by RF thermal plasma CVD, reinforced by an electroplated metal binder, and regrown to form a continuous film. Microscratching and pin-on-disk wear tests indicate that the three-step composite films are more adherent than plasma deposited diamonds alone.
Стилі APA, Harvard, Vancouver, ISO та ін.
16

KURAMASU, Keizaburo, Tetsuhiro KORECHIKA, Masatoshi KITAGAWA, and Takashi HIRAO. "Mechanical Properties of SiOxNy Films Deposited by RF Plasma-Enhanced CVD." Journal of the Ceramic Society of Japan 105, no. 1218 (1997): 161–65. http://dx.doi.org/10.2109/jcersj.105.161.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
17

Berghaus, J. O., J. L. Meunier, and F. Gitzhofer. "Direct current bias effects in RF induction thermal plasma diamond CVD." IEEE Transactions on Plasma Science 30, no. 1 (February 2002): 442–49. http://dx.doi.org/10.1109/tps.2002.1003894.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
18

Kim, Dong-Sun, and Tae-Won Kang. "Deposition of Amorphous Carbon Thin Films by Pulsed RF Plasma CVD." JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 38, no. 8 (2005): 593–99. http://dx.doi.org/10.1252/jcej.38.593.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
19

Kejun, Liao, and Wang Wanlu. "Cubic Boron Nitride Films Formed by Thermally Assisted rf Plasma CVD." Chinese Physics Letters 12, no. 1 (January 1995): 58–60. http://dx.doi.org/10.1088/0256-307x/12/1/016.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
20

Sachdev, H., and P. Scheid. "Formation of silicon carbide and silicon carbonitride by RF-plasma CVD." Diamond and Related Materials 10, no. 3-7 (March 2001): 1160–64. http://dx.doi.org/10.1016/s0925-9635(00)00575-6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
21

Baldwin, S. K., T. G. Owano, and C. H. Kruger. "Growth rate studies of CVD diamond in an RF plasma torch." Plasma Chemistry and Plasma Processing 14, no. 4 (December 1994): 383–406. http://dx.doi.org/10.1007/bf01570203.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
22

Itoh, Naomi, Kiyotaka Kato, and Isamu Kato. "Fabrication of sin thin films by rf biased microwave plasma CVD." Electronics and Communications in Japan (Part II: Electronics) 74, no. 7 (1991): 101–6. http://dx.doi.org/10.1002/ecjb.4420740711.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
23

Shimizu, Hideki, Setsuo Nakao, Hiroshi Kusakabe, and Mikio Noda. "Microstructures of hydrogenated amorphous carbon films prepared by rf plasma CVD." Journal of Non-Crystalline Solids 114 (December 1989): 196–98. http://dx.doi.org/10.1016/0022-3093(89)90111-7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
24

Takenaka, Kosuke, Yusuke Okumura, and Yuichi Setsuhara. "Characterization of inductively coupled RF plasmas for plasma-assisted mist CVD of ZnO films." Journal of Physics: Conference Series 379 (August 7, 2012): 012031. http://dx.doi.org/10.1088/1742-6596/379/1/012031.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
25

Saha, Sucharita, and Debajyoti Das. "Diamond-Like Carbon Thin Films from Low-Pressure and High-Density CH4 Plasma." IOP Conference Series: Materials Science and Engineering 1221, no. 1 (March 1, 2022): 012037. http://dx.doi.org/10.1088/1757-899x/1221/1/012037.

Повний текст джерела
Анотація:
Abstract DLC thin films were grown using a low-pressure high-density CH4/Ar plasma on glass substrates in a planar RF (13.56 MHz) inductively coupled plasma (ICP) CVD system. Using a plasma triggered by RF power to a mixture of 20 sccm CH4 and 50 sccm Ar gas maintained at a low pressure of ∼30 mTorr, a series of samples were prepared by varying the substrate temperature and then changing the RF power. The optimised DLC films, obtained at 500 °C and 900 W demonstrated a high optical transmission of ∼97 % corresponding to awideoptical band gap of ∼3.58 eV; and a minimum of ID/IG ∼0.61 along witha maximum ofIDia/ID ∼1.32 in Raman analysis established the maximum sp3/sp2 content in the carbon network.
Стилі APA, Harvard, Vancouver, ISO та ін.
26

Fantoni, R., M. Giorgi, A. G. G. Moliterni, W. C. M. Berden, V. Lazic, O. Martini, and F. Polla Mattiot. "On-line gas-phase optical diagnostics in plasma CVD deposition of carbon films." Journal of Materials Research 7, no. 5 (May 1992): 1204–14. http://dx.doi.org/10.1557/jmr.1992.1204.

Повний текст джерела
Анотація:
Space resolved, on-line spontaneous and stimulated emission, and CARS diagnostics have been employed on CH4/H2 mixtures excited by rf-discharge in order to investigate the chemical processes and the gas phase kinetics in the plasma. CH4 and H2 concentration and temperature have been monitored during the process as a function of main reaction parameters (rf-power, total pressure, CH4/H2 ratio). Formation of CH,H2, and H in excited states has been observed. On the basis of present spectroscopic data, a model for the gas-phase reactions accompanying the carbon film deposition is proposed.
Стилі APA, Harvard, Vancouver, ISO та ін.
27

Cho, Chung-Woo, Byungyou Hong, and Young-Ze Lee. "Wear life evaluation of diamond-like carbon films deposited by microwave plasma-enhanced CVD and RF plasma-enhanced CVD method." Wear 259, no. 1-6 (July 2005): 789–94. http://dx.doi.org/10.1016/j.wear.2005.02.007.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
28

Jeong, Chaehwan, Seongjae Boo, Minsung Jeon, and Koichi Kamisako. "Characterization of Intrinsic a-Si:H Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition for Solar Cell Applications." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4169–73. http://dx.doi.org/10.1166/jnn.2007.064.

Повний текст джерела
Анотація:
The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 °C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm−1, which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.
Стилі APA, Harvard, Vancouver, ISO та ін.
29

Fouad, Osama A., Nizam Uddin, Masaaki Yamazato, and Masamitsu Nagano. "RF-plasma enhanced CVD of TiSi2 thin films: effects of TiCl4 flow rate and RF power." Journal of Crystal Growth 257, no. 1-2 (September 2003): 153–60. http://dx.doi.org/10.1016/s0022-0248(03)01419-2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
30

Przetakiewicz, Karol, Katarzyna Tkacz-Śmiech, Piotr Boszkowicz, and Stanisława Jonas. "Polymer-Surface Modification with a-C:N:H Layers Plasma Chemically Deposited in RF CVD and MW CVD Systems." Solid State Phenomena 165 (June 2010): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.165.159.

Повний текст джерела
Анотація:
The paper demonstrates that polymer surface may be modified by means of carbon nitride layers (a C:N:H) formed by Plasma Enhanced Chemical Vapor Deposition method. The layers were deposited from CH4/N2/Ar plasma generated by radio-frequency waves (13.56 MHz) and microwaves (2.45 GHz). A series of experiments enabled determination of technological parameters appropriate to deposit well-adhering and high quality layers on PC, Plexi and PET surfaces. The obtained layers were subjected to structural and chemical composition studies employing energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT IR) techniques. It was established that roughness parameters of the samples with layers were visibly lower than the parameters characterizing the surfaces after pre-treating with Ar plasma and remained on the same level or were slightly lower than those for raw polymer surfaces.
Стилі APA, Harvard, Vancouver, ISO та ін.
31

Park, Yonggyun, Pengzhan Liu, Seunghwan Lee, Jinill Cho, Eric Joo, Hyeong-U. Kim, and Taesung Kim. "Diagnosing Time-Varying Harmonics in Low-k Oxide Thin Film (SiOF) Deposition by Using HDP CVD." Sensors 23, no. 12 (June 14, 2023): 5563. http://dx.doi.org/10.3390/s23125563.

Повний текст джерела
Анотація:
This study identified time-varying harmonic characteristics in a high-density plasma (HDP) chemical vapor deposition (CVD) chamber by depositing low-k oxide (SiOF). The characteristics of harmonics are caused by the nonlinear Lorentz force and the nonlinear nature of the sheath. In this study, a noninvasive directional coupler was used to collect harmonic power in the forward and reverse directions, which were low frequency (LF) and high bias radio frequency (RF). The intensity of the 2nd and 3rd harmonics responded to the LF power, pressure, and gas flow rate introduced for plasma generation. Meanwhile, the intensity of the 6th harmonic responded to the oxygen fraction in the transition step. The intensity of the 7th (forward) and 10th (in reverse) harmonic of the bias RF power depended on the underlying layers (silicon rich oxide (SRO) and undoped silicate glass (USG)) and the deposition of the SiOF layer. In particular, the 10th (reverse) harmonic of the bias RF power was identified using electrodynamics in a double capacitor model of the plasma sheath and the deposited dielectric material. The plasma-induced electronic charging effect on the deposited film resulted in the time-varying characteristic of the 10th harmonic (in reverse) of the bias RF power. The wafer-to-wafer consistency and stability of the time-varying characteristic were investigated. The findings of this study can be applied to in situ diagnosis of SiOF thin film deposition and optimization of the deposition process.
Стилі APA, Harvard, Vancouver, ISO та ін.
32

Sleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny, and Ilya A. Zhilnikov. "Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD." Modern Electronic Materials 6, no. 2 (July 15, 2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.

Повний текст джерела
Анотація:
We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V).
Стилі APA, Harvard, Vancouver, ISO та ін.
33

Saitoh, Hidetoshi, Yoshihiko Hirotsu, and Yukio Ichinose. "Conditions for Formation of BN Film by Thermally Assisted RF Plasma CVD." Journal of the Japan Institute of Metals 54, no. 2 (1990): 186–92. http://dx.doi.org/10.2320/jinstmet1952.54.2_186.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
34

ISHIGURO, Takashi, Hidetoshi SAITOH, and Yukio ICHINOSE. "Synthesis of cubic boron nitride film by an RF plasma CVD method." Journal of the Japan Society for Precision Engineering 53, no. 10 (1987): 1527–31. http://dx.doi.org/10.2493/jjspe.53.1527.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
35

Kumadaki, Masahiko, Masaki Yoshino, Kohki Sato, and Hidenori Itoh. "Low-temperature Deposition of SiCN Thin Films by RF Plasma CVD Method." IEEJ Transactions on Fundamentals and Materials 134, no. 10 (2014): 538–44. http://dx.doi.org/10.1541/ieejfms.134.538.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
36

NAKAYAMA, Masatoshi, Kunihiro UEDA, Masanori SHIBAHARA, Kazunori MARUYAMA, and Kiichiro KAMATA. "Bias Effect on the Formation of Carbon Films by RF-Plasma CVD." Journal of the Ceramic Society of Japan 98, no. 1138 (1990): 597–600. http://dx.doi.org/10.2109/jcersj.98.597.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
37

Okuyama, Hideo, Kazuhiro Honnma, and Satoru Ohno. "Synthesis of Composite Metal Particles Modified UFP Using the RF-plasma CVD." Journal of the Japan Society of Powder and Powder Metallurgy 47, no. 9 (2000): 993–98. http://dx.doi.org/10.2497/jjspm.47.993.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
38

Kim, Je-Deok, Hiroyuki Sugimura, and Osamu Takai. "Water-repellency of a-C:H films deposited by rf plasma-enhanced CVD." Vacuum 66, no. 3-4 (August 2002): 379–83. http://dx.doi.org/10.1016/s0042-207x(02)00158-6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
39

Garci´a, A., V. Bellido, N. Flan˜o, and J. I. On˜ate. "Submicron characterization of B-C:H thin films produced by RF plasma CVD." Diamond and Related Materials 1, no. 2-4 (March 1992): 350–54. http://dx.doi.org/10.1016/0925-9635(92)90056-t.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
40

Dehning, C., A. Holländer, A.-M. Leventi-Peetz, and K. Silmy. "Simulation of a Plasma Enhanced µ-jet-CVD Process." NAFEMS International Journal of CFD Case Studies 5 (April 2006): 51–56. http://dx.doi.org/10.59972/8ptzprew.

Повний текст джерела
Анотація:
We present results of a coupled calculation to simulate the combined movement and plasma excitation of a process gas, accelerated in the form of a fine beam, known as micro-jet (µ-jet-CVD), between the RF electrodes of a CVD-plasma-reactor, before it reaches the deposition surface. The form and geometry of the deposition, as well as its chemical and physical properties, depend on the chemical properties of the gas, the externally supplied electrical energy as well as the gas-dynamical characteristics of the flow [1]. Previous open jet numerical simulations have examined the possibility of an existing direct analogy of the deposition form to the form of jet lines-geometry for corresponding pressure values in the reactor device. The present preliminary study shows the feasibility of flow coupled to plasma-excitation simulation calculations. The process simulated here is most probably well away from the equilibrium state.
Стилі APA, Harvard, Vancouver, ISO та ін.
41

Gaisin, I. R., R. M. Valeeva, and N. I. Maksimov. "Cardiorenal continuum in hypertensive pregnancy." "Arterial’naya Gipertenziya" ("Arterial Hypertension") 15, no. 5 (October 28, 2009): 590–97. http://dx.doi.org/10.18705/1607-419x-2009-15-5-590-597.

Повний текст джерела
Анотація:
Risk factors (RF), initial stages, progression, and final stage of both cardiovascular disease (CVD) and chronic kidney disease (CKD) were analyzed in a cohort of 159 pregnant women with hypertensive disorders versus a cohort of 32 healthy pregnant controls. Cardiorenal continuum factors were separately investigated in patients with different gestational hypertension (HT) depending on the diagnostic method: 13 with isolated clinic HT (1CHT), 11 - isolated ambulatory HT (IAHT), and 18 - HT found by all three blood pressure (BP) measurement methods (clinic, ambulatory, and home BP). The number of RF (age, family history of CVD and pre-eclampsia, pre-pregnancy history of smoking, lack of physical exercise, and oral contraception, BP levels, abdominal obesity, dyslipidaemia, anxiety and depression, oxidative stress, altered fasting plasma glucose, metabolic syndrome), signs of subclinical organ damage (cell membrane destabilization, left ventricular hypertrophy, intima-media thickening, slight increase in serum creatinine, hyperuricaemia, endothelial dysfunction, albuminuria, low glomerular filtration rate), and total cardiovascular risk progressively increased from the condition of being normotensive at the time of office, home, and 24-hour measurements to the condition of being found hypertensive by one, two and all three BP measurement methods, forming the continuum «healthy pregnant women - ICHT - IAHT - gestational HT». Assessment of cardiorenal state in all pregnant women allowed to compose the cline «healthy pregnants- gestational HT- stage I essential HT - stage II essential HT - pre-eclampsia - essential HT with superimposed pre-eclampsia» with the growing risk of CVD and CKD and potential danger of cardiovascular events and chronic renal failure.
Стилі APA, Harvard, Vancouver, ISO та ін.
42

Zarchi, Meysam, and Shahrokh Ahangarani. "A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD." Metallurgical and Materials Engineering 21, no. 1 (March 31, 2015): 7–14. http://dx.doi.org/10.30544/128.

Повний текст джерела
Анотація:
The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.
Стилі APA, Harvard, Vancouver, ISO та ін.
43

Yasuoka, Yuki, Toru Harigai, Jun-Seok Oh, Hiroshi Furuta, Akimitsu Hatta, Tsuneo Suzuki, and Hidetoshi Saitoh. "Diamond-like carbon films from CO source gas by RF plasma CVD method." Japanese Journal of Applied Physics 54, no. 1S (November 10, 2014): 01AD04. http://dx.doi.org/10.7567/jjap.54.01ad04.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
44

Shimada, Y., K. Kobayashi, N. Mutsukura, and Y. Machi. "Synthesis of diamond on substrate with mechanical treatment by RF plasma CVD method." Plasma Sources Science and Technology 2, no. 1 (February 1, 1993): 18–22. http://dx.doi.org/10.1088/0963-0252/2/1/005.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
45

Maemura, Yoko, Hiroshi Fujiyama, Tomoko Takagi, Ryo Hayashi, Wataru Futako, Michio Kondo, and Akihisa Matsuda. "Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD." Thin Solid Films 345, no. 1 (May 1999): 80–84. http://dx.doi.org/10.1016/s0040-6090(99)00100-5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
46

Deb, B., B. Bhattacharjee, A. Ganguli, S. Chaudhuri, and A. K. Pal. "Boron nitride films synthesized by RF plasma CVD of borane–ammonia and nitrogen." Materials Chemistry and Physics 76, no. 2 (August 2002): 130–36. http://dx.doi.org/10.1016/s0254-0584(01)00524-7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
47

Nanbu, Toshikazu, Mikio Takemoto, and Toshitsugu Fukai. "Corrosion Resistance of TiN Coating Deposited on Quartz by RF Plasma-Assisted CVD." Zairyo-to-Kankyo 41, no. 11 (1992): 734–40. http://dx.doi.org/10.3323/jcorr1991.41.734.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
48

MATSUI, ISAO. "CVD Material Processing. Effect of O2 on Formation of Ar-O2 RF Plasma." KAGAKU KOGAKU RONBUNSHU 26, no. 6 (2000): 792–97. http://dx.doi.org/10.1252/kakoronbunshu.26.792.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
49

Hozumi, Atsushi, Hiroki Sekoguchi, Nobuhisa Sugimoto, and Osamu Takai. "Transparent Water-repellent Films Containing Fluoro-alkyl Functions by RF Plasma-enhanced CVD." Transactions of the IMF 76, no. 2 (January 1998): 51–53. http://dx.doi.org/10.1080/00202967.1998.11871194.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
50

Tóth, A., M. Mohai, T. Ujvári, and I. Bertóti. "Surface and nanomechanical properties of Si:C:H films prepared by RF plasma beam CVD." Diamond and Related Materials 14, no. 3-7 (March 2005): 954–58. http://dx.doi.org/10.1016/j.diamond.2005.01.017.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії