Добірка наукової літератури з теми "RF Plasma CVD"
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Статті в журналах з теми "RF Plasma CVD"
Hay, Stephen O., Ward C. Roman, and Meredith B. Colket. "CVD diamond deposition processes investigation: CARS diagnostics/modeling." Journal of Materials Research 5, no. 11 (November 1990): 2387–97. http://dx.doi.org/10.1557/jmr.1990.2387.
Повний текст джерелаYAMAMOTO, Masaoki, Masayuki FUKUI, and Takayuki SHIBATA. "Properties of carbonous films synthesized by RF plasma CVD." Journal of the Japan Society for Precision Engineering 55, no. 12 (1989): 2222–27. http://dx.doi.org/10.2493/jjspe.55.2222.
Повний текст джерелаMannan, Md Abdul, Masamitsu Nagano, Norie Hirao, and Yuji Baba. "Hexagonal BCN Films Prepared by RF Plasma-enhanced CVD." Chemistry Letters 37, no. 1 (January 5, 2008): 96–97. http://dx.doi.org/10.1246/cl.2008.96.
Повний текст джерелаTSAKADZE, E., K. OSTRIKOV, Z. TSAKADZE, N. JIANG, R. AHMAD, and S. XU. "CONTROL AND DIAGNOSTICS OF INDUCTIVELY COUPLED PLASMAS FOR CHEMICAL VAPOUR DEPOSITION ON NANOCOMPOSITE CARBON NITRIDE-BASED FILMS." International Journal of Modern Physics B 16, no. 06n07 (March 20, 2002): 1143–47. http://dx.doi.org/10.1142/s0217979202011019.
Повний текст джерелаInao, Takuro, Masahiko Kumadaki, Kohki Satoh, Masaki Yoshino, and Hidenori Itoh. "Deposition of Boron Nitride Films using RF Plasma CVD Method." IEEJ Transactions on Fundamentals and Materials 134, no. 6 (2014): 397–401. http://dx.doi.org/10.1541/ieejfms.134.397.
Повний текст джерелаKashem, Abul, Masaki Matsushita, and Shinzo Morita. "RF Plasma CVD of C-S Compound under Hydrogen Dilution." Journal of Photopolymer Science and Technology 13, no. 1 (2000): 47–49. http://dx.doi.org/10.2494/photopolymer.13.47.
Повний текст джерелаJie, Jiang, and Liu Chenzan. "Diamond-like carbon thin films prepared by rf-plasma CVD." Vacuum 42, no. 16 (1991): 1058. http://dx.doi.org/10.1016/0042-207x(91)91327-k.
Повний текст джерелаMITSUI, Akira, and Akio KATO. "Preparation of SiC Powders by CVD Method Using RF-Plasma." Journal of the Ceramic Association, Japan 94, no. 1089 (1986): 517–20. http://dx.doi.org/10.2109/jcersj1950.94.1089_517.
Повний текст джерелаMitomo, Tohru, Tomohiro Ohta, Hiroaki Sasaki, Kenichi Ohtsuka, and Yasuhiro Habu. "Deposition of amorphous-carbon films by RF plasma CVD method." KAGAKU KOGAKU RONBUNSHU 17, no. 2 (1991): 305–12. http://dx.doi.org/10.1252/kakoronbunshu.17.305.
Повний текст джерелаMitsui, Akira, and Akio Kato. "Preparation of SiC powders by CVD method using RF-plasma." International Journal of High Technology Ceramics 3, no. 1 (January 1987): 85. http://dx.doi.org/10.1016/0267-3762(87)90071-3.
Повний текст джерелаДисертації з теми "RF Plasma CVD"
Bránecký, Martin. "Tenké vrstvy připravené v RF doutnavém výboji a jejich fyzikálně-chemické vlastnosti." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221284.
Повний текст джерелаOrlandi, Francesco. "Applicazione e Confronto di Modelli Computazionali Turbolenti per l'Analisi dei Fenomeni Fluidodinamici in Camera di Reazione di una Sorgente di Plasma Termico di Tipo ICP-RF per la Produzione di Nanoparticelle." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2019.
Знайти повний текст джерелаChang-WeiChen and 陳昶瑋. "Microwave Plasma CVD Nanodiamond and Its Application to RF MEMS Capacitive Switches." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/02237981579789795565.
Повний текст джерела國立成功大學
微電子工程研究所碩博士班
98
In this research, we deposit nanodiamond films by Microwave Plasma Chemical Vapor Deposition. Nanodiamond used as dielectric layer of RF MEMS capacitive switches. The major problem need to be solved is charging effect, and it also limit the life time of switches. After operation many times, switches would induce pull-in voltage shift and stiction problem. We use nanodiamond films as dielectric material to prevent the charging effect of switches. We controlled graphite phase concentration of nanodiamond films by using different growth conditions to lower dc resistivity. It can allow charges to escape from dielectric layers quickly and increase the reliability of switches. In order to find the best growth condition of nanodiamond films for switches, we analyzed nanodiamond films by some equipment, including Raman spectrum, Scanning Electron Microscope and Atomic Force Microscope..We fabricated MIM capacitors by Si3N4 and nanodiamond to perform DC measurement and transient current measurements. We designed four structures of RF MEMS capacitive switches and analyzed their pull-in voltage and capacitance ratio by C-V measurement. Additionally, we discussed about actuation properties and charging effect of switches with Si3N4 and nanodiamond as dielectric, respectively.
Тези доповідей конференцій з теми "RF Plasma CVD"
Vikharev, A. "Investigation of the Millimeter-Wave Plasma Assisted CVD Reactor." In HIGH ENERGY DENSITY AND HIGH POWER RF: 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158797.
Повний текст джерелаJiang, Jie, and Chen Z. Liu. "Diamond-like carbon thin films prepared by rf-plasma CVD." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47311.
Повний текст джерелаTakechi, Kazushige, Hiroyuki Uchida, Hiroshi Hayama Akira Kodama, and Yoshimi Watabe. "A-Si:H TFTs Fabricated with Gated rf-discharge Plasma-CVD Technology." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.lc-8.
Повний текст джерелаATAEV, B. M., A. M. BAGAMADOVA, I. K. KAMILOV, V. V. MAMEDOV, A. K. OMAEV, and S. SH MAKHMUDOV. "LOW-TEMPERATURE CVD GROWTH OF ZnO FILMS STIMULATED BY RF-DISCHARGE PLASMA." In Proceedings of the International Workshop. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702876_0032.
Повний текст джерелаHa, Peter C. T., D. R. McKenzie, M. M. M. Bilek, E. D. Doyle, and P. K. Chu. "Intrinsic Stress of DLC Film Prepared by RF Plasma CVD and Filteredcathodic ARC PVD." In IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science. IEEE, 2005. http://dx.doi.org/10.1109/plasma.2005.359498.
Повний текст джерелаIkeda, Kishimoto, Hirose, and Numasawa. ""TOP-PECVD": a new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma." In Proceedings of IEEE International Electron Devices Meeting. IEEE, 1992. http://dx.doi.org/10.1109/iedm.1992.307362.
Повний текст джерелаHiramatsu, M., K. Yamada, E. Mizuno, M. Nawata, M. Ikeda, M. Hori, and T. Goto. "Diamond film formation using RF plasma CVD assisted by water vapor enhanced hydrogen radical source." In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531623.
Повний текст джерелаRivero III, Jose. "CNT Metamaterial Fabrication 3D Printing Mask Process." In MME Undergraduate Research Symposium. Florida International University, 2022. http://dx.doi.org/10.25148/mmeurs.010567.
Повний текст джерелаRavera, G. L., S. Ceccuzzi, A. Cardinali, R. Cesario, F. Mirizzi, G. Schettini, and A. A. Tuccillo. "Thin CVD-diamond RF Pill-Box vacuum windows for LHCD systems." In RADIOFREQUENCY POWER IN PLASMAS: Proceedings of the 20th Topical Conference. American Institute of Physics, 2014. http://dx.doi.org/10.1063/1.4864592.
Повний текст джерелаMostaghimi, Javad, Sanaz Arabzadeh Esfarjani, Seth Dworkin, Benoit Simard, Keun Su Kim, Gervais Soucy, and Ali Shahverdi. "CFD Simulation of Single-walled Carbon Nanotube Growth in an RF Induction Thermal Plasma Process." In 42nd AIAA Plasmadynamics and Lasers Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2011. http://dx.doi.org/10.2514/6.2011-3600.
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