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1
Krstić, D. "RF microelectronics." Microelectronics Journal 29, no. 12 (December 1998): 1041–42. http://dx.doi.org/10.1016/s0026-2692(98)00059-7.
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Frear, D. R., and S. Thomas. "Emerging Materials Challenges in Microelectronics Packaging." MRS Bulletin 28, no. 1 (January 2003): 68–74. http://dx.doi.org/10.1557/mrs2003.20.
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IntroductionThe trend for microelectronic devices has historically been, and will continue to be, toward a smaller feature size, faster speeds, more complexity, higher power, and lower cost. The driving force behind these advances has traditionally been microprocessors. With the tremendous growth of wireless telecommunications, rf applications are beginning to drive many areas of microelectronics that traditionally were led by developments in microprocessors. An increasingly dominant factor in rf microelectronics is electronic packaging, and the materials needed to create the package, because the package materials strongly affect the performance of the electronics. Many challenges remain for the packaging of microprocessors as well. These challenges include increased speed, the number of input/output interconnects, decreased pitch, and decreased cost. This article highlights the key issues facing the packaging of high-performance digital and rf electronics.
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Springer, A., and R. Weigel. "RF microelectronics for W-CDMA mobile communication systems." Electronics & Communication Engineering Journal 14, no. 3 (June 1, 2002): 92–100. http://dx.doi.org/10.1049/ecej:20020301.
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Putman, Carol, Rachel Cramm Horn, J. Ambrose Wolf, and Daniel Krueger. "Thermodynamic Analysis of Physical Vapor Deposited Inorganic Thin Films on Low Temperature Cofired Ceramic." Journal of Microelectronics and Electronic Packaging 13, no. 3 (July 1, 2016): 95–101. http://dx.doi.org/10.4071/imaps.518.
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Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high-reliability, high-density microelectronics. The functionality and robustness of rework have been increased through the incorporation of a physical vapor deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for radio frequency (RF) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. Although previous work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e., thermodynamic) parameters in the literature. This article analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxide coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability between pair of materials at specific temperature. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.
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Putman, Carol, Rachel Cramm Horn, Ambrose Wolf, and Daniel Krueger. "Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (May 1, 2016): 000175–82. http://dx.doi.org/10.4071/2016cicmt-tha13.
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Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.
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Settaouti, Lahouaria, and Abderrahmane Settaouti. "A Monte Carlo Method for Low Pressure Radio Frequency Discharges." Sultan Qaboos University Journal for Science [SQUJS] 8, no. 1 (June 1, 2003): 47. http://dx.doi.org/10.24200/squjs.vol8iss1pp47-54.
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There is increasing interest in glow discharges because of their importance to a large number of application fields, like the microelectronics industry, flat plasma display panel technology, the laser and light industry and analytical spectrochemistry. To improve the capabilities of rf glow discharges, a good understanding of the discharge physics is highly desirable. The typical calculated results include the radio frequency (rf) voltage, the electrical field distribution, the density of argon ions and electrons, the electron energy distribution function and information about the collision processes of the electrons with the Monte Carlo model. These results are presented throughout the discharge axis and as a function of time in the rf cycle. Moreover, we have investigated how many rf cycles have to be followed before a periodic steady state is reached.
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Shorey, Aric, Shelby Nelson, David Levy, and Paul Ballentine. "Thin Glass Handling Solutions for Microelectronics Packaging." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000192–96. http://dx.doi.org/10.4071/2380-4505-2020.1.000192.
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Abstract Glass substrates with fine-pitch through-glass via (TGV) technology gives an attractive approach to wafer level packaging and systems integration. Glass can be made in very thin sheets (<100 um thick) which aids in integration and eliminates the need for back-grinding operations. Electrical and physical properties of glass have many attractive attributes such as low RF loss, the ability to adjust thermal expansion properties, and low roughness with excellent flatness to achieve fine L/S. Furthermore, glass can be fabricated in panel format to reduce manufacturing costs. The biggest challenge to adopting glass as a packaging substrate has been the existence of gaps in the supply chain, caused primarily by the difficulty in handling large, thin glass substrates using standard automation and processing equipment. This paper presents a temporary bonding technology that allows the thin glass substrates to be processed in a semiconductor fab environment without the need to modify existing equipment.
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Young, Nathan, Jay Johnson, and Kevin G. Ewsuk. "Microelectronics Package Design Using Experimentally-Validated Modeling and Simulation." Key Engineering Materials 484 (July 2011): 192–203. http://dx.doi.org/10.4028/www.scientific.net/kem.484.192.
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Packaging high power radio frequency integrated circuits (RFICs) in low temperature cofired ceramic (LTCC) presents many challenges. Within the constraints of LTCC fabrication, the design must provide the usual electrical isolation and interconnections required to package the IC, with additional consideration given to RF isolation and thermal management. While iterative design and prototyping is an option for developing RFIC packaging, it would be expensive and most likely unsuccessful due to the complexity of the problem. To facilitate and optimize package design, thermal and mechanical simulations were used to understand and control the critical parameters in LTCC package design. The models were validated through comparisons to experimental results. This paper summarizes an experimentally-validated modeling approach to RFIC package design, and presents some results and key findings.
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Tomikawa, Masao, Hitoshi Araki, Yohei Kiuchi, and Akira Shimada. "Photosensitive Polyimide having low loss tangent for RF application." International Symposium on Microelectronics 2018, no. 1 (October 1, 2018): 000476–82. http://dx.doi.org/10.4071/2380-4505-2018.1.000476.
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Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.
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Gropp, S., M. Fischer, A. Frank, C. Schäffel, J. Müller, and M. Hoffmann. "Fabrication of an RF-MEMS-Switch on a hybrid Si-Ceramic substrate." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (May 1, 2016): 000118–21. http://dx.doi.org/10.4071/2016cicmt-wa24.
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Abstract The integration of MEMS sensors, microelectronics and RF circuits including RF-MEMS is still a challenging task but becomes crucial for the Internet of Things. A wafer-level silicon-ceramic composite substrate (called SiCer, Silicon-on-Ceramics) allows new options in smart system integration. SiCer substrates combine the benefits of two different worlds of materials. The silicon substrate is a suitable material to build active MEMS devices such as switches and resonators. The ceramic substrate, a Low Temperature Cofired Ceramic (LTCC), is well-known for RF circuit integration including resistors, capacitors and coils. Both materials are co-sintered into a monolithically composite substrate. Chemical and physical modification of the silicon interface allows a low-pressure sintering and therefore new techniques for generating buried cavities at the bond interface. A carbon paste is applied on the LTCC via screen printing. After sintering, this results in a defined cavity. To demonstrate the advantages of the buried cavities within SiCer substrates the fabrication process of a RF-MEMS switch is shown. The switch is intended for a switching matrix to select frequency bands in a mobile LTE receiver. A parallel-plate electrostatic actuation with in-plane movement has been selected. This type of switch allows a large displacement range and a low actuation voltage can be achieved.
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Marzouk, Jaouad, Steve Arscott, Abdelhatif El Fellahi, Kamel Haddadi, Tuami Lasri, Christophe Boyaval, and Gilles Dambrine. "MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization." Journal of Micromechanics and Microengineering 25, no. 7 (June 24, 2015): 075024. http://dx.doi.org/10.1088/0960-1317/25/7/075024.
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Mustafa, M. K., U. Majeed, and Y. Iqbal. "Effect on Silicon Nitride thin Films Properties at Various Powers of RF Magnetron Sputtering." International Journal of Engineering & Technology 7, no. 4.30 (November 30, 2018): 39. http://dx.doi.org/10.14419/ijet.v7i4.30.22000.
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Silicon nitride thin films have numerous applications in microelectronics and optoelectronics fields due to their unique properties. In this work, silicon nitride thin films were produced using radio frequency (R.F.) magnetron sputtering technique at various sputtering powers. The prepared thin films were characterized with XRD, FE-SEM, FTIR, surface profiler, AFM and spectral reflectance techniques for structure, surface morphology, chemical bonding information, growth rate, surface roughness and optical properties. The results showed that silicon nitride thin films were amorphous in nature. The films were smooth and densely packed with no voids or cracks at the surface. FTIR characterization informed about Si-N bonding existence which confirmed the formation of silicon nitride films. The sputtering power showed the impetus effect on growth rate, surface roughness and optical properties of produced films.
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ROMBOLÀ, G., V. BALLARINI, A. CHIODONI, L. GOZZELINO, E. MEZZETTI, B. MINETTI, C. F. PIRRI, E. TRESSO, and C. CAMERLINGO. "R.F. SPUTTERING DEPOSITION OF BUFFER LAYERS FOR Si/YBCO INTEGRATED MICROELECTRONICS." International Journal of Modern Physics B 19, no. 31 (December 20, 2005): 4605–17. http://dx.doi.org/10.1142/s0217979205032929.
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The aim of the present work is the optimization of the Si /buffer-layer/YBCO multilayer deposition process so as to grow superconducting films of quality suitable for device applications. The structural properties of the Si/CeO 2 system, obtained by RF magnetron sputtering of CeO 2 targets in Ar atmosphere, have been studied. More than 50 films have been deposited and some of them submitted to post-deposition annealing treatments both in N 2 and O 2 atmospheres. The presence of an unwanted amorphous SiO 2 layer at the Si/CeO 2 interface compromises the YBCO c-axis orientation, and therefore the sharpness of the R versus T transition. A newly designed deposition system has been realized: it has been specially conceived for obtaining bi- and tri-layers, adopting two targets in YSZ and CeO 2, respectively. Results on YSZ/Si and CeO 2/ YSZ/Si systems obtained with the new machine are presented and discussed: (100) oriented YSZ films with nominal thickness of 40 nm have been obtained. The CeO 2 film subsequently deposited has the desired (100) orientation. The YBCO film, in the final YBCO/YSZ/CeO 2/ Si configuration, is c-axis oriented.
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Fu, Meng, Stan Skafidas, and Iven Mareels. "A Novel Delay-Based GFSK Demodulator in 65 nm CMOS for Low Power Biomedical Applications." International Journal of Interdisciplinary Telecommunications and Networking 10, no. 3 (July 2018): 21–32. http://dx.doi.org/10.4018/ijitn.2018070103.
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This article describes how, in recent years, with the development of microelectronics, implantable electronic devices have been playing a significant role in modem medicine. Examples of such electronic implant devices are, for instance, retinal prosthesis and brain implants. It brings great challenges in low power radio frequency (RF) and analog designs. This article presents a low power Gaussian frequency shift keying (GFSK) demodulator designed for Medical Implant Communications Service (MICS) band Receiver. This demodulator utilizes a novel structure that a wide IF range can be handled and presents the smallest Δf/f ratio in any published GFSK demodulators. In theory the demodulation method can be applied to any RF frequency. The demodulator draws 550uA from a 1 V power supply. A maximum data rate of 400 Kbits/s can be achieved within the 300 KHz channel bandwidth defined by MICS. A simulated signal-to-noise ratio (SNR) of 15.2dB at AWGN channel is obtained to achieve 10-3 bit error rate (BER). This demodulator is fabricated on 65-nm CMOS and occupies 0.12mm2 silicon area.
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Bora, B., H. Bhuyan, M. Favre, E. Wyndham, and H. Chuaqui. "Characterization of Capacitively Coupled Radio-Frequency Argon Plasma by Electrical Circuit Simulation." Applied Mechanics and Materials 110-116 (October 2011): 5373–79. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.5373.
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Low temperature radio frequency plasma is widely used in low temperature plasma processing medium for material processing in many fields including microelectronics, aerospace, and the biology. For proper utilization of the process, it is very much important to know the plasma parameters. In this paper a novel technique is used to determine the plasma parameters from the electrical discharge characteristic and the power balance method. The homogeneous discharge model is used to evaluate the relation between the plasma parameters with the discharge characteristics. The electron density and temperature is found to be well agree with the Langmuir probe data in the range of 0.5x1016 to 45x1016 cm-3 and 1.4 to 1.6 ev for wide range of rf power.
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Shorey, Aric, Shelby Nelson, David Levy, and Paul Ballentine. "Thin Glass Substrates with Through-Glass Vias." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000147–51. http://dx.doi.org/10.4071/2380-4505-2019.1.000147.
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Abstract Glass substrates with fine-pitch through-glass via (TGV) technology is a promising approach to system in a package (SIP) integration. Millimeter wave applications, in particular, benefit from the superior RF properties, dimensional stability, and surface properties of glass. Glass can be made in very thin sheets (<200 um) which aids in integration and eliminates the need for back-grinding operations. The biggest challenge to adopting glass as a microelectronics packaging substrate is the existence of gaps in the supply chain, caused primarily by the difficulty in handling large, thin glass substrates using existing automation and processing equipment. This paper presents a temporary bonding technology that allows the substrates to be processed in a semiconductor fab environment without the need to modify existing equipment.
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Bernal-Salamanca, Monica, Zorica Konstantinović, Carlos Frontera, Víctor Fuentes, Alberto Pomar, Lluis Balcells, and Benjamín Martínez. "Formation of Nickel Oxide Nanocuboids in Ferromagnetic La2Ni1−xMn1+xO6." Nanomaterials 11, no. 3 (March 21, 2021): 804. http://dx.doi.org/10.3390/nano11030804.
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The control of the spontaneous formation of nanostructures at the surface of thin films is of strong interest in many different fields, from catalysts to microelectronics, because surface and interfacial properties may be substantially enhanced. Here, we analyze the formation of nickel oxide nanocuboids on top of La2Ni1−xMn1+xO6 double perovskite ferromagnetic thin films, epitaxially grown on SrTiO3 (001) substrates by radio-frequency (RF) magnetron sputtering. We show that, by annealing the films at high temperature under high oxygen partial pressure, the spontaneous segregation of nanocuboids is enhanced. The evolution of the structural and magnetic properties of the films is studied as a function of the annealing treatments at different temperatures. It is shown that the formation of NiOx nanocuboids leads to a nanostructured film surface with regions of locally different electrical transport characteristics.
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Peterson, Ken A., Daniel S. Krueger, and Charles E. Sandoval. "Selected Applications and Processing for Low Temperature Cofired Ceramic." International Symposium on Microelectronics 2010, no. 1 (January 1, 2010): 000248–53. http://dx.doi.org/10.4071/isom-2010-tp3-paper2.
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Low Temperature Cofired Ceramic technology has proven itself in microelectronics, microsystems (including microfluidic systems), sensors, radio frequency (RF) features, and various other non-electronic applications. We will discuss selected applications and the processing associated with those applications. We will then focus on our recent work in the area of electromagnetic isolation (EMI) shielding using full tape thickness features (FTTF) and sidewall metallization. The FTTF is very effective in applications with −150 dB isolation requirements, but presents obvious processing difficulties in full-scale fabrication. The FTTF forms a single continuous solid wall around the volume to be shielded by using sequential punching and feature-filling. Sidewall metallization provides another method for shielding. We discuss the material incompatibilities and manufacturing considerations that need to be addressed for such structures and show preliminary implementations.
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Peng, Qi Zhen, Ye Ko San, Samuel Khong, Jonathan Sim, Santhiagu Ezhilvalavan, Jan Ma, and Hng Huey Hoon. "Thermoelectric Properties of N-Type Bi2Te2.7Se0.3 and P-Type Bi0.5Sb1.5Te3 Films for Micro-Cooler Applications." Solid State Phenomena 185 (February 2012): 9–11. http://dx.doi.org/10.4028/www.scientific.net/ssp.185.9.
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Bi2Te3and its solid solution remain the state-of-the-art thermoelectric materials for refrigeration applications in microelectronics industry, such as dissipating the heat generated by various devices. The fabrication method and associated processing parameters are to be optimised to get desirable composition exhibiting better electrical and thermal transport properties. Carrier concentration and mobility are found to be crucial in achieving high thermoelectric cooling efficiency and energy conversion. In this paper, we present the fabrication and analysis of thermoelectric thin films deposited by RF-magnetron sputtering from n-type Bi2Te2.7Se0.3and p-type Bi0.5Sb1.5Te3targets on a silicon substrate. X-ray diffraction, Scanning electron microscopy combined with energy dispersive spectrometry, electrical resistivity, Seebeck coefficient and thermal diffusivity measurements were used for the thermoelectric thin films characterization. We studied the effect of sputtering process parameters, on the structural, electrical and thermal transport characteristics of films. The observed results demonstrate both n-and p-type doped Bi2Te3films exhibit desirable properties and could be potential candidates for thermoelectric micro-cooler applications.
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Chiriac, Victor Adrian, and Tien-Yu Tom Lee. "Impact of Die Attach Material and Substrate Design on RF GaAs Power Amplifier Devices Thermal Performance." Journal of Electronic Packaging 125, no. 4 (December 1, 2003): 589–96. http://dx.doi.org/10.1115/1.1604804.
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The latest commercial applications for microelectronics use GaAs material for RF power amplifier (PA) devices. This leads to the necessity of identifying low cost packaging solutions with high standards for reliability, electrical, and thermal performance. A detailed thermal analysis for the wirebonded GaAs devices is performed using numerical simulations. The main interest of the study focuses on the impact of die attach thermal conductivity (1.0–50.0 W/mK), substrate’s top metal layer thickness (25–50 μm), and via wall thickness (25–50 μm) on GaAs IC device overall thermal performance. The study uses a two-layer organic substrate. The peak temperatures reached by the PA stages range from 99.6°C to 120.3°C, below the prohibitive/critical value of 150°C (based on 85°C ambient temperature). The increase of die attach thermal conductivity from 1.0 to 7.0 W/mK led to a decrease in peak temperatures of up to 18°C, with larger decay between 1 and 2.4 W/mK. The largest temperature differences were obtained by varying the thermal via thickness, as opposed to only increasing the top metal layer thickness. The peak temperatures and corresponding junction-to-ambient thermal resistances are thoroughly documented. With the same die attach thickness, for a thermal conductivity much larger than 7 W/mK, the impact on the PA’s peak temperature is insignificant. The die attach solder material (with a large thermal conductivity) leads to only a small (2.5°C) decrease in the PA junction temperature.
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Ojha, Manish, Yousuf S. Mohamed, Helmut Baumgart, and Abdelmageed Elmustafa. "Magnetron Sputtering Deposition of Lead-Free (SAC) Thin-Film Alloys and Mechanical Characterization Using Nanoindentation." ECS Meeting Abstracts MA2022-02, no. 64 (October 9, 2022): 2357. http://dx.doi.org/10.1149/ma2022-02642357mtgabs.
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Electronic packaging industries are in an ongoing transition to lead free soldering due to the adverse effect on environment and human health [1]. Sn-Ag-Cu (SAC) have been recognized as promising alternatives due to its low eutectic temperature, higher wettability and strength, superior resistance to creep and thermal fatigue. Surface roughness has a significant influence on mechanical parameters determined nanoindentation tests. Although research has been conducted to analyze the mechanical properties of bulk SAC material, there have been limited prior studies on SAC thin films and their mechanical properties since fabricating a smooth SAC thin film is a fundamental challenge. SAC thin films with four different Sn–Ag–Cu ternary eutectic composition: 96.5Sn-3.0Ag-0.5Cu, 95.5Sn-3.8Ag–0.7Cu, 95.5Sn-3.9Ag–0.6Cu & Sn-4.0Ag–0.5Cu will be deposited using RF magnetron sputtering with different deposition rates and annealed at various temperature to fabricate a smooth continuous film. Figures 1 and 2 depict SAC05 deposited using RF magnetron sputtering at Figure 1: SEM image of SAC-05 surface at 10,000X. 20W, 2.4 mTorr pressure, and argon flow flow rate of 20.5 sccm. Surface morphology will be examined using Field emission Scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Crystallinity of the deposited film will be examined using X-ray diffraction (XRD). Mechanical properties will be studied using nanoindentation [2]. Properties of the thin film will be compared with the bulk material with similar eutectic composition. References M. Abtew G. Selvaduray. (2000). Lead-free Solders in Microelectronics. Materials Science & Engineering. a Review Journal., 27(5-6), 95. Long, X., Wang, S., Feng, Y., Yao, Y., & Keer, L. M. (2017). Annealing Effect on Residual Stress of Sn-3.0Ag-0.5Cu Solder Measured by Nanoindentation and Constitutive Experiments. Materials Science and Engineering: A, 696, 90-95. Figure 1
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Wang, San-Fu, Yu-Wei Chang, and Chun-Yen Tang. "A Novel Dual-Band Six-Phase Voltage-Control Oscillator." Sensors 18, no. 11 (November 19, 2018): 4025. http://dx.doi.org/10.3390/s18114025.
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The paper presents a novel dual-band six-phase voltage-control oscillator. The voltage-controlled oscillator (VCO) with a single-ended delay cell architecture has a lower power consumption, a smaller chip area, and a larger output swing than one with a differential delay cell architecture. However, the conventional even-phase outputs ring-type VCO cannot be implemented using single-ended delay cells. In other words, the VCO with single-ended delay cells meets most of the requirements of a sensor circuit system, except even-phase outputs function. This work presents a dual-band six-phase ring type VCO, which is implemented using the proposed single-ended delay cell. The proposed VCO both exhibits the advantages of single-ended delay cells and differential delay cells. The proposed delay cell has a band-switching function, which improves the jitter performance of a VCO in which it is used. The proposed VCO can be operated at 890–1080 MHz. The peak-to-peak jitter and the root mean square jitter are the 35.5 ps and 2.8 ps (at 1 GHz), respectively. The maximal power consumption is approximately 6.4 mW at a supply voltage of 1.8 V in a United Microelectronics Corporation 0.18 μm RF CMOS process. The area of the chip is 0.195 × 0.208 mm2.
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Goeke, R. S., R. K. Grubbs, D. Yazzie, A. L. Casias, and K. A. Peterson. "Gas Permeation Measurements on Low Temperature Cofired Ceramics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (September 1, 2012): 000323–27. http://dx.doi.org/10.4071/cicmt-2012-wa25.
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Commercial low temperature cofired ceramic (LTCC) technology is established in microelectronics and microsystems packaging, multichip and radio frequency (RF) modules, and sensors. The ability to combine structural considerations with embedded traces and components using laminated glass-ceramic tapes has created solutions to unconventional packaging requirements of micro-electro-mechanical systems (MEMS) devices. Many MEMS devices such as resonators are very sensitive to pressure and require packaging in a vacuum environment. Attaining and maintaining desirable pressure levels in sealed vacuum packages requires knowledge of the permeation characteristics of the vacuum envelope and the sealing materials. An experimental system to measure the time dependent gas permeation through LTCC at temperatures from room temperature to 500°C has been developed. This system utilizes a membrane technique in which a gas is allowed to permeate through a test sample, held at a constant temperature, into a high vacuum chamber where it is detected using mass spectrometry. The gas permeation value is determined from the steady state gas flux through the sample. The gas diffusivity and solubility in the material were calculated using data from the time dependent approach to the steady state condition. The gas-solid permeation data for helium through DuPont 951 LTCC is presented and compared to the permeation through other common vacuum envelope materials such as glasses and high-purity alumina ceramics. Application of the permeation data to the prediction of vacuum levels inside typical LTCC packaging is discussed. This data can further be utilized in designs to create LTCC packages that meet specific pressure/time operating requirements.
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Filipovic, Lado, and Siegfried Selberherr. "Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors." Nanomaterials 12, no. 20 (October 18, 2022): 3651. http://dx.doi.org/10.3390/nano12203651.
Повний текст джерелаАнотація:
During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.
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Das, Rabindra, J. M. Lauffer, and F. D. Egitto. "Versatile Z-Axis Interconnection for High Performance Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001033–50. http://dx.doi.org/10.4071/2013dpc-wa13.
Повний текст джерелаАнотація:
The demand for high-performance, lightweight, portable computing power for next generation packaging is driving the industry toward miniaturization at a rate not seen before. Electronic packaging is evolving to meet the demands of higher functionality in ever smaller packages. To accomplish this, new packaging needs to be able to integrate more dies with greater function, higher I/O counts, smaller die pad pitches, and greater heat densities, while being pushed into smaller and smaller footprints. New packaging designs are emerging that require joining (stacking) of multiple packages, joining of different size packages, and flexibility and/or rigidity to accommodate requirements related to size, weight, and complexity. This paper presents a novel Z-axis interconnect approach for extending performance beyond the limits imposed by traditional approaches. Specifically, metal-to-metal z-axis electrical interconnection among substrates (sub-composites) of the same or varying size, or among flexible and rigid elements (rigid-flex), to form a single structure is described. The structure employs an electrically conductive medium to interconnect thin coreless substrates. The substrates are built in parallel, aligned, and laminated to form a variety of multilayer, high density structures including rigid, rigid-rigid, rigid-flex, stacked packages, or RF substrates. The Z-interconnect based structures offer many advantages over more conventional build-up technologies, for example, an increase in metal layer counts without the cumulative yield loss of sequential (build up) processing, placement of flex elements into any layer of the substrate, the opportunity for multiple flex layers within a rigid-flex substrate, the ability to connect multiple multilayer substrates of varying size, and the ability to connect between any two arbitrary metal layers within the rigid region without the use of plated through holes (PTHs), allowing for increased wiring density, and reduction or elimination of via stubs that cause signal attenuation, In addition, multilayer rigid-flex packages for a variety of applications are being developed. Several classes of flexible materials that can be used to form high-performance flexible packaging are discussed. Materials, including polyimides, PTFE, liquid crystal polymer (LCP), have been used to develop multilayer rigid-flex packages. The process allows fabrication of Z-interconnect conductive joints having diameters in the range of 55–500 microns. Via or component pitches down to 150 microns have been demonstrated. The processes and materials used to achieve smaller feature dimensions, satisfy stringent registration requirements, and achieve robust electrical interconnections are discussed. A number of RF structures have been designed and built with Z-interconnect technology, affording the flexibility to place wide signals, narrow signals and grounds and clearances only where needed. Electrically, S-parameter measurements revealed low loss at multi-gigahertz frequencies and the insertion loss for narrow, short lines and wide, long lines are similar. The electrically conductive adhesive used to form Z-interconnect shows good signal transmission to 25GHz. Z-interconnect substrates provide unique solutions for next generation complex packaging. Collectively, the results suggest that Z-interconnect technology may be attractive for a range of applications, not only where miniaturization is required, such as consumer products, but also in high performance large-area microelectronics such as supercomputers, radio frequency structures, etc.
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Lin, Kuo-Tong, and Jenn-Ming Wu. "Rf-Magnetron Sputtering of Titanium Dioxide for Microelectronic Applications." Japanese Journal of Applied Physics 43, no. 1 (January 13, 2004): 232–36. http://dx.doi.org/10.1143/jjap.43.232.
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Rajan, S. D., V. Sarihan, and M. Mahalingam. "Methodology for Automated Design of Microelectronic Packages." Journal of Electronic Packaging 116, no. 4 (December 1, 1994): 274–81. http://dx.doi.org/10.1115/1.2905698.
Повний текст джерелаАнотація:
A general design methodology for the optimal design of electronic packages is presented. The design problem is cast as a nonlinear programming (NLP) problem. Design for critical packaging issues such as thermal and mechanical performance, is automated by combining thermal and mechanical finite element analysis with an NLP optimizer. The major issues such as design problem formulation, model generation or preprocessing, nonlinear finite element analysis, design variable identification, design sensitivity analysis and software implementation are addressed. A case study involving the design of an RF packaging component in communication products illustrates the design methodology implemented in the Automated Design of Electronic Packaging (ADEP) software system.
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Kondaiah, P., Habibuddin Shaik, and G. Mohan Rao. "Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications." Electronic Materials Letters 11, no. 4 (July 2015): 592–600. http://dx.doi.org/10.1007/s13391-015-4490-6.
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Bhatt, Vivekanand, and Sudhir Chandra. "Silicon dioxide films by RF sputtering for microelectronic and MEMS applications." Journal of Micromechanics and Microengineering 17, no. 5 (April 24, 2007): 1066–77. http://dx.doi.org/10.1088/0960-1317/17/5/029.
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Charbonneau, Paul, Hans Ohman, and Marc Fortin. "Solder Joint Reliability Assessment for a High Performance RF Ceramic Package." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000062–67. http://dx.doi.org/10.4071/isom-ta26.
Повний текст джерелаАнотація:
The prediction of long term solder joint reliability, (SJR), of microelectronic devices and packaging solutions continues to challenge the microelectronic packaging industry, particularly with the introduction of lead-free materials, the push for higher performance (frequency/speed/thermal) and lower unit cost. High performance packages are generally custom designed and therefore have minimal industry data on configuration specific reliability performance. In this application, the package substrate coefficient of thermal expansion, (CTE), was closely matched to the die resulting in a relatively large CTE mismatch between the package and organic PCB. In addition, the package RF and thermal performance requirements required this particular solution to be configured as a “cavity down” perimeter ball array with a large central ground pad to electrically couple the package to the PCB. Given the package's unique design requirements and CTE mismatch, even modest daily temperature swings of 20°C usually found in a controlled or “Central Office” environment could have an adverse impact on the interconnect reliability. This study provides an overview of the solder joint reliability assessment methodologies performed for a custom design lead-free, high performance RF package as part of the requirements to demonstrate compliance to product specifications. SJR life predictions were made for varying package BGA configurations using a multi-tiered approach using constitutive material models, thermo-mechanical finite element simulations, and material specific fatigue models. Empirical accelerated life testing was performed and a life prediction obtained through modeling was validated. Finally, statistical failure distributions were fit to empirical data and discussed in the context of absolute solder life predictions of small fractions unit failures, (100ppm).
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Sutanto, Jemmy, D. H. Kang, J. H. Yoon, K. S. Oh, Michael Oh, R. Lanzone, and R. Huemoeller. "CoC (Chip on Chip) or FtoF (Face to Face) - PossumTM Technology for 3D MEMS and ASIC eliminating the need of TSV or Wire Bonding." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 000916–36. http://dx.doi.org/10.4071/2013dpc-tp33.
Повний текст джерелаАнотація:
This paper describes the ongoing 3 years research and development at Amkor Technology on CoC (Chip on Chip)/FtF (Face to Face) – PossumTM technology. This technology has showed a lot of interests from the microelectronics customers/industries because of its various advantages, which include a) providing smaller form factor (SFF) to the final package, b) more functionalities (dies) can be incorporated/assembled in one package, c) improving the electrical performance - including lower parasitic resistance, lower power, and higher frequency bandwidth, and d) Opportunity for lower cost 3D system integration. Unlike other 3D Packaging technology (e.g. using TSV (Through Silicon Vias)) that requires some works in the front stream (wafer foundry) level, needs new capitals for machines/equipments, and needs modified assembly lines; CoC/FtF technology uses the existing flip Chip Attach (C/A) or TC (Thermal Compression) equipment/machine to perform the assembly joint between the two dies, which are named as the mother (larger) die and the daughter (smaller) die. Furthermore, the cost to assemble CoC/FtF is relatively inexpensive while the applications are very wide and endless, which include the 3D integration of MEMS and ASIC. The current MEMS packaging and test cost contributes about 35 to 45% to the overall MEMS unit cost. WLC (Wafer Level Capping) with wire bonding have been widely used for mass production for accelerometer (e.g. ADI and Motorola), gyroscope (e.g. Bosch and Invensense), and oscillator /timer (e.g. Discera). The WLC produce drawbacks of a large form factor and the increase in the capacitive and electrical resistances. Currently, the industries have been developing a new approach of 3D WLP (Wafer Level Packaging) by using a) TSV MEMS cap with wire bonding (e.g. Discera), b) TSV MAME cap with solder bump (e.g. Samsung, IMEC, and VTI), and c) TSV MEMS wafer/die with cap (e.g. Silex Microsystems). The needs of TSVs in the 3D WLP will add the packaging cost and reduce the design flexibility is pre-TSV wafer is used. “Amkor CoC/FtoF – PossumTM” is an alternative technology for 3D integration of MEMS and ASIC. CoC/FtoF – PossumTM does not require TSV or wire bonding; Miniaturizing form factor of 1.5 mm x 1.5 mm x 0.95 mm (including the package) of MEMS and ASIC can be achieved by using CoC/FtoF – PossumTM while Discera's design of 3D WLP requires substrate size > 2 mm x 2 mm. CoC/FtoF – PossumTM will likely produce packaging cost which is lower than WLC or 3D WLP – TSV at the same time the customer is benefited from smaller FF and reduced electrical/parasitic resistance. CoC/FtoF – PossumTM can be applied to any substrates including FCBGA and laminate. This technology also can be applied to package multiple MEMS microsensors, together with ASIC, microcontroller, and wireless RF to realize the 3D system integration.
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Tseng, K. F., Y. H. Hsion, and B. J. Lwo. "A multifunctional test chip for microelectronic packaging and its application on RF property measurements." International Journal of Electronics 94, no. 6 (June 2007): 633–43. http://dx.doi.org/10.1080/00207210701298305.
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Ndip, Ivan, Michael Töpper, Kai Löbbicke, Abdurrahman Öz, Stephan Guttowski, Herbert Reichl, and Klaus-Dieter Lang. "Characterization of Interconnects and RF Components on Glass Interposers." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000770–80. http://dx.doi.org/10.4071/isom-2012-wp13.
Повний текст джерелаАнотація:
As a result of their myriad of advantages over silicon and other conventional substrate technologies, glass substrates have received significant attention from the electronic packaging and system integration community worldwide. So far, most of the research effort on glass has concentrated on developing methods for fabricating cylindrical through glass vias (TGVs). However, to fully evaluate the potential of glass as an interposer material for microelectronic systems with computing and communication functions, an extensive characterization of interconnects and RF components on these substrates must be carried out. In this contribution, we go beyond state-of-the-art research and present an in-depth characterization of TGVs, coplanar lines and 60 GHz coplanar excited patch antennas on two glass substrates. One of these substrates has a low alkaline content (Borofloat33®) and the other is alkaline-free (AF32®). The effects of these glass materials on the RF performance of TGVs, coplanar lines and 60 GHz antennas are extensively studied, and recommendations for performance optimization are proposed. For experimental verification, test samples are fabricated and measured. Very good correlation is obtained between the measurement and simulation results from 100 MHz to 100 GHz.
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DONG, C. J., M. XU, W. LU, and Q. Z. HUANG. "GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER." Surface Review and Letters 20, no. 02 (April 2013): 1350015. http://dx.doi.org/10.1142/s0218625x13500157.
Повний текст джерелаАнотація:
InN film with an AlInN/AlN bilayer buffer was deposited on Si(111) substrate by radio frequency (RF) magnetron sputtering. X-ray diffraction and Raman spectroscopy measurements reveal that the InN film is of hexagonal wurtzite crystal structure with highly (0002) preferred orientation. An Al0.24In0.76N interface layer of about ~50 nm was confirmed by transmission electron microscopy (TEM) and further analyzed by X-ray photoelectron spectroscopy (XPS). The quality of this film is remarkably better than InN films grown directly on Si substrate or with only an AlN buffer, due to the effective accommodation of mismatch between the film and substrate. Our results will be very useful in the fabrication of applicable nitride microelectronic materials.
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Trulli, Susan, Craig Armiento, Christopher Laighton, Elicia Harper, Mahdi Haghzadeh, and Alkim Akyurtlu. "Additive Packaging for Microwave Applications." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000768–72. http://dx.doi.org/10.4071/isom-2017-thp53_148.
Повний текст джерелаАнотація:
Abstract This paper describes efforts to apply Additive Manufacturing (AM) technologies to microelectronic packaging of devices and subsystems for RF and microwave applications. This work, which was conducted at the Raytheon-University of Massachusetts Lowell Research Institute (RURI), is directed at a variety of applications such as 2D and 3D phased array antennas and tunable frequency selective surfaces (FSS). This paper will describe research on device modeling/simulation, formulation of novel functional inks, development of process/printing technologies and new material characterization techniques. Important elements of the additive packaging efforts include the integration of active die with printed components, replacement of wire bonds with printed chip interconnects and the development of integrated, printed connectors. Research on printed, tunable microwave components, such as varactors and phase shifters, are also discussed.
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Andreev, SK, LI Popova, VK Gueorguiev, and EB Manolov. "High-temperature-annealing effects on the electrical properties of RF sputtered SnO2 thin films for microelectronic sensors." Vacuum 47, no. 11 (November 1996): 1325–28. http://dx.doi.org/10.1016/s0042-207x(96)00191-1.
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Li, Yonglong, Bingrui Yu, Shengxian Chen, Ming Hu, Xiangwei Zhu, and Xuelin Yuan. "Failure Mechanism of pHEMT in Navigation LNA under UWB EMP." Micromachines 13, no. 12 (December 8, 2022): 2179. http://dx.doi.org/10.3390/mi13122179.
Повний текст джерелаАнотація:
With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments. Therefore, to improve the robustness of radio frequency (RF) microwave circuits, it is crucial to study the reliability of semiconductor devices. In this paper, the temporary failure mechanism of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) in a navigation low-noise amplifier (LNA) under the jamming of ultra-wideband (UWB) electromagnetic pulses (EMP) is investigated. The failure process and failure mechanism of pHEMT under UWB EMP are elaborated by analyzing the internal electric field, current density, and temperature distribution. In detail, as the amplitude of UWB EMP increases, the output current, carrier mobility, and transconductance of pHEMT decrease, eventually resulting in gain compression. The injection experiment on LNA, which effectively verified the failure mechanism, indicates that the gain of pHEMT is suppressed instantaneously under the jamming of UWB EMP and the navigation signal cannot be effectively amplified. When UWB EMP amplitude increases to nearly 10 V, the BeiDou Navigation Satellite System (BDS) carrier signal is suppressed by nearly 600 ns. Experimental results accord well with the simulation of our model. UWB EMP jamming is a new and efficient type of electromagnetic attack system based on the device saturation effect. The performance degradation and failure mechanism analysis contribute to RF reinforcement design.
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HASSAN, NAJAM UL, ZAHID HUSSAIN, M. NAEEM, ISHFAQ AHMAD SHAH, G. HUSNAIN, ISHAQ AHMAD, and ZAKA ULLAH. "INFLUENCE OF ION BEAM IRRADIATION ON STRUCTURAL, MAGNETIC AND ELECTRICAL CHARACTERISTICS OF Ho-DOPED AlN THIN FILMS." Surface Review and Letters 24, no. 02 (January 30, 2017): 1750021. http://dx.doi.org/10.1142/s0218625x17500214.
Повний текст джерелаАнотація:
Holmium (Ho)-doped AlN thin films of thicknesses 60, 90 and 300 nm were grown in pure nitrogen atmosphere via RF magnetron sputtering. The deposited thin films were irradiated with protons at a dose of 5[Formula: see text]10[Formula: see text] ions/cm2 and the effects of irradiation on structural, magnetic and electrical characteristics of thin films were investigated. Rutherford backscattering spectroscopy (RBS) confirmed the presence of Al, N and Ho in prepared samples. X-ray diffraction analysis showed that crystallinity of the thin films was enhanced after irradiation and thicker films were more crystalline. Atomic force microscopy (AFM) revealed that the surface roughness and porosity of the thin films were increased after irradiation. Magnetic measurements showed that diamagnetic AlN:Ho thin films can be transformed into paramagnetic and ferromagnetic ones via suitable irradiation. The increase in carrier concentrations after irradiation was responsible for tuning the electrical and magnetic characteristics of thin films for applications in various high voltage microelectronic and magnetic devices.
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Tian, W., J. C. Jiang, and X. Q. Pan. "Nonorthogonal Twining in Epitaxial SrRuO3 Thin Films Grown on (001) LaAlO3." Microscopy and Microanalysis 7, S2 (August 2001): 332–33. http://dx.doi.org/10.1017/s1431927600027732.
Повний текст джерелаАнотація:
Nonorthogonal twinings have commonly been observed in perovskite oxides such as SrTi03 and BaTi03. Among them, the ﹛111﹜ Σ3 type twining exists with a relative large amount of population and has been extensively studied. By combining quantitative high resolution transmission electron microscopy (HRTEM) and spatially resolved electron energy loss spectroscopy (EELS), one was able to determine the atomic structure of the ﹛111﹜Σ3 twin boundary in these oxides.[l] On the other hand, nonorthogonal twinings in SrRuO3 have been much less studied. SrRu03, a ternary ruthenium metal oxide, has a perovskite-compatible structure and exhibits low electrical resistivity (10-4 Ω•cm), showing an unparallel technique importance in microelectronic applications. Since the properties of material strongly depend on the microstructure and defect configurations, it is important to study the twining structures and their formation mechanisms in SrRuO3 thin films.Transmission electron microscopy (TEM) was used to study the SrRuO3 thin films grown on (001) LaAlO3 by 90° off-axis rf sputtering.
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Hess, Dennis W. "(Invited) Surface Modification to Control Wetting and Adhesion of Aqueous Solutions." ECS Meeting Abstracts MA2022-02, no. 30 (October 9, 2022): 1082. http://dx.doi.org/10.1149/ma2022-02301082mtgabs.
Повний текст джерелаАнотація:
rf plasmas and electrochemical treatments have been used extensively for thin film deposition and etching in the fabrication of microelectronic and photonic devices. These methods can be applied to non-traditional substrates (e.g., paper and stainless steel) to alter surface and bulk properties to create (i) paper-based analytical devices with application to microfluidic devices, and (ii) antibacterial structures on stainless steel. Two examples will be described. First, the effects of plasma-based oxygen etching of cellulose surfaces followed by plasma-enhanced fluorocarbon film deposition will be described and shown to control wetting and adhesion of water droplets. These process steps can also be used to form fully enclosed hydrophilic channels in bulk paper and thereby allow microfluidic device fabrication on inexpensive and renewable substrates. Electrochemical etching of stainless steel creates micro- and nano-structures on stainless steel surfaces that repel water and bacteria. These surfaces have potential applications in orthopedic implants and consumer metal products prone to bacterial contamination.
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Aebischer, H. A. "Inductance Formula for Square Spiral Inductors with Rectangular Conductor Cross Section." Advanced Electromagnetics 8, no. 4 (September 10, 2019): 80–88. http://dx.doi.org/10.7716/aem.v8i4.1074.
Повний текст джерелаАнотація:
Planar spiral coils are used as inductors in radio frequency (RF) microelectronic integrated circuits (IC’s) and as antennas in both radio frequency identification (RFID) and telemetry systems. They must be designed to a specified inductance. From the literature, approximate analytical formulae for the inductance of such coils with rectangular conductor cross section are known. They yield the direct current (DC) inductance, which is considered as a good approximation for inductors in RF IC’s up to the GHz range. In principle, these formulae can simplify coil design considerably. But a recent comparative study of the most cited formulae revealed that their maximum relative error is often much larger than claimed by the author, and too large to be useful in circuit design.
This paper presents a more accurate formula for the DC inductance of square planar spiral coils than was known so far. It is applicable to any design of such coils with up to windings. Owing to its scalability, this holds irrespectively of the coil size and the inductance range. It lowers the maximum error over the whole domain of definition from so far down to . This has been tested by the same method used in the comparative study mentioned above, where the precise reference inductances were computed with the help of the free standard software FastHenry2. A comparison to measurements is included. Moreover, the source code of a MATLAB® function to implement the formula is given in the appendix.
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Mednikarov, B. "Deposition and Characterization of Aluminium Nitride (AlN) and Diamond Like Carbon (DLC) Hard Coatings." Solid State Phenomena 159 (January 2010): 63–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.63.
Повний текст джерелаАнотація:
Traditionally, the term hard coatings refer to the property of high hardness in mechanical sense with good tribological properties [1]. With the development of modern technology in the areas of optical, optoelectronic, microelectronic and related defense applications, the definition of the term hard coatings can be extended. Thus, a system which operates satisfactorily, in a given environment can be said to be hard with respect to that environment [2]. Most of the hard coatings are ceramic compounds such as oxides, carbides, nitrides (AlN), ceramic alloys, cermets, metastable materials such as Diamond-Like Carbon (DLC). Their properties and environmental resistance depend on the composition, stoichiometry, impurities, microstructure, imperfections, and in the case of coatings, the preferred orientation (texture). In this paper we shall take a look at some characteristics - physicochemical and optical of AlN and DLC layers synthesized by physical vapor deposition – RF magnetron sputtering in an industrial high vacuum deposition system. The influence of the process parameters on the growth rate, morphology, topography and chemical bonding structure will be presented.
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Arina, Fan Shermin Chow Hui, Banu Abdul Bari Shamira, Ai Lin Chia, Ye Ko San, Samuel Khong, Jonathan Sim, Santhiagu Ezhilvalavan, Jan Ma, and Heng Hui Hoon. "Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi2Te3 Films." Solid State Phenomena 185 (February 2012): 94–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.185.94.
Повний текст джерелаАнотація:
Thermoelectric is an ever evolving field that serves many critical needs (cooling and power generation) in the industry. The key objective of this work is to fabricate Bismuth Telluride (Bi2Te3) thin-films by varying the various process parameters using a radio-frequency (RF) magnetron sputtering disposition technique. Characterization methods such as four point probe resistivity, surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), Seebeck coefficient and thermal diffusivity are performed on the N and P-type Bi2Te3films. The samples are analysed for their electrical properties in relation to the evolved microstructures, for how the process parameters of sputtering and annealing affect these changes. The results demonstrate that N-Type film (S2) processed using sputtering parameters of 7mT, 100W, 50sccm of argon flow under room temperature for 30mins with no annealing and the P-Type film processed using sputtering parameters of 7mT, 100W, 60sccm under room temperature for 30mins with institute annealing at 200°C for 2h exhibit desirable thermoelectric properties suitable for cooling application in microelectronic and optoelectronic devices, optimizing their performance and reliability.
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Aebischer, H. A. "Comparative Study of the Accuracy of Analytical Inductance Formulae for Square Planar Spiral Inductors." Advanced Electromagnetics 7, no. 5 (September 19, 2018): 37–48. http://dx.doi.org/10.7716/aem.v7i5.862.
Повний текст джерелаАнотація:
In the design of radio frequency (RF) microelectronic integrated circuits (IC’s) and of antennas for short-wave radio frequency identification (RFID) and telemetry systems, planar spiral coils are important components. Many approximate analytical formulae for calculating the inductance of such coils can be found in the literature. They can simplify the problem of designing inductors to a predefined inductance considerably. But the error statistics given by different authors cannot be compared because they are based on different or unknown domains of definition. Hence, it is not possible to decide which formula is best in a given case by merely studying the literature. This paper compares the maximum relative errors of six of some of the most cited formulae in the literature. To all formulae, the same domains of definition are applied. Each of them spans all four dimensions of the parameter space. Precise inductances are obtained numerically with the help of the free scientific and industrial standard software FastHenry2 and used as reference values to calculate the errors of the formulae. It has been found that the alleged maximum errors reported by some authors are far too optimistic. Only two formulae feature small enough errors to be useful in circuit design. The method and the domains of definition applied in the present study may also prove useful for the assessment of future formulae.
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Wu, Haibo, Wei Zhang, Shenghan Gao, Tiejun Li, and Bin Liu. "Synthesis of Multiscale Ultrafine Copper Powder via Radio Frequency Induction Coupled Plasma Treatment." Metals 12, no. 3 (March 14, 2022): 490. http://dx.doi.org/10.3390/met12030490.
Повний текст джерелаАнотація:
Nano-sized spherical copper powder has important applications in the fields of microelectronic devices, highly efficient catalysts and lubricant additives. In this study, nano-sized and micron-sized spherical copper powders were simultaneously prepared by radio frequency (RF) induction coupled plasma technology. The effects of processing parameters on the powder properties were studied. The results show that by inputting copper powder with D50 = 34.6 μm, nano-sized spherical powder with a particle size of 10–220 nm and micron-sized spherical powder with a particle size of 4.0–144.0 μm were obtained. The ratio of the nano-sized powder reached 86.4 wt.%. The optimal processing parameters are as follows: powder feed rate is 5.5 g/min, carrier gas flow rate is 5–6 L/min and reaction chamber pressure is 15 Psia. When the carrier gas flow rate is 6 L/min, in the plasma zone (>10,000 K), the powder with particle size <42.0 μm is completely vaporized, which forms nano-sized powder during cooling, while the powder with particle size >42.0 μm is melted and partially vaporized, forming a micron-sized powder. The research results provide a new way for engineering the production of copper nano-powder and some other nano-powders with low melting points, such as silver powder, tin powder and so on.
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Flemming, Jeb, Roger Cook, Kevin Dunn, and James Gouker. "Cost-Effective Precision 3D Glass Microfabrication for Advanced Packaging Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 000791–810. http://dx.doi.org/10.4071/2012dpc-tp12.
Повний текст джерелаАнотація:
Today's packaging has become the limiting element in system cost and performance for IC development. Assembly and packaging technologies have become primary differentiators for manufactures of consumer electronics and the main enabler of small IC product development. Traditional packaging approaches to address the needs in these “High Density Portable” devices, including FR4, liquid crystal polymers, and Low Temperature Co-Fire Ceramics, are running into fundamental limits in packaging layer thinness, high density interconnects (HDI) size and density, and do not present solutions to in-package thermal management, and optical waveguiding. In this talk, 3D Glass Solutions will present on our efforts to create advanced microelectronic packing solutions using our APEX™ Glass ceramic which offers a single material capable of being simultaneously used for ultra-HDI through glass vias (TGVs), optical waveguiding, and in-package microfluidic cooling. In this talk we will discuss our latest results in wafer-level microfabrication of packaging solutions. We will present on our efforts for creating copper filled vias, surface metallization, and passivation. Furthermore, we will present our efforts in exploring this material to produce (1) ultra-HDI glass interposers, with TGVs as small as 12 microns, with 14 micron center –to-center, (2) advanced RF packages with unique surface architectures designed to minimize signal loss, and (3) creating wave guiding structures in HDI packages.
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Peterson, K. A., K. D. Patel, C. K. Ho, B. R. Rohrer, C. D. Nordquist, B. D. Wroblewski, and K. B. Pfeifer. "LTCC Microsystems and Microsystem Packaging and Integration Applications." Journal of Microelectronics and Electronic Packaging 3, no. 3 (July 1, 2006): 109–20. http://dx.doi.org/10.4071/1551-4897-3.3.109.
Повний текст джерелаАнотація:
Low Temperature Cofired Ceramic (LTCC) has proven to be an enabling medium for microsystem technologies, because of its desirable electrical, physical, and chemical properties coupled with its capability for rapid prototyping and scalable manufacturing of components. LTCC is viewed as an extension of hybrid microcircuits, and in that function it enables development, testing, and deployment of silicon microsystems. However, its versatility has allowed it to succeed as a microsystem medium in its own right, with applications in non-microelectronic meso-scale devices and in a range of sensor devices. Applications include silicon microfluidic ‘chip-and-wire’ systems and fluid grid array (FGA)/microfluidic multichip modules using embedded channels in LTCC, and cofired electro-mechanical systems with moving parts. Both the microfluidic and mechanical system applications are enabled by sacrificial volume materials (SVM), which serve to create and maintain cavities and separation gaps during the lamination and cofiring process. SVMs consisting of thermally fugitive or partially inert materials are easily incorporated. Screeding is an incorporation technique we describe that improves uniformity and eliminates processing steps. Recognizing the premium on devices that are cofired rather than assembled, we report on functional-as-released and functional-as-fired moving parts, including an impeller that has been exercised over thirty million cycles, and a cofired pressure sensor that requires only pressure source and electrical connections. Additional applications for cofired transparent windows, some as small as an optical fiber, are also described. The applications described help pave the way for widespread application of LTCC to biomedical, control, analysis, characterization, and radio frequency (RF) functions for macro-meso-microsystems.
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"Predicting failure in modern microelectronics." Research Features, no. 134 (March 4, 2021). http://dx.doi.org/10.26904/rf-134-158161.
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Gandhi, S. Girish, I. Govardhani, and M. Venkata Narayana. "An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications." International Journal of Integrated Engineering 14, no. 7 (December 31, 2022). http://dx.doi.org/10.30880/ijie.2022.14.07.003.
Повний текст джерелаАнотація:
The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20. The performance metrics like Length 25.34 μm, Width 28.92 μm and Thickness 34.42 μm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications.
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Savrun, E., M. Sarikaya, A. Luan, and T. Pearsall. "Silicide Metallization of Aluminum Nitride Substrates for High-Temperature Microelectronics." MRS Proceedings 402 (1995). http://dx.doi.org/10.1557/proc-402-561.
Повний текст джерелаАнотація:
AbstractA novel metallization for aluminum nitride substrates to package silicon carbide integrated circuits for use at temperatures up to 600°C was investigated. Chemical equilibrium calculations were used to determine the chemical compatibility of several refractory and transition metal disilicides with AIN. Tungsten disilicide, niobium disilicide, and titanium disilicide were selected for thin film deposition studies. WSi2, NbSi2, and TiSi2 thin films were deposited by RF sputtering on AIN substrates and heat treated at 900°C, 1000°C, and 1200°C in an argon atmosphere. Sheet resistivities were measured and interface stabilities and structures were characterized by scanning and transmission electron microscopy imaging, electron diffraction, and energy dispersive x-ray microanalysis spectroscopy. The results show that metal silicides appear to be promising as metallization for aluminum nitride for use at temperatures above 600°C.