Статті в журналах: "Resistive random-access memory, ReRAM"

1

Kim, Hyojung, Ji Su Han, Sun Gil Kim, Soo Young Kim, and Ho Won Jang. "Halide perovskites for resistive random-access memories." Journal of Materials Chemistry C 7, no. 18 (2019): 5226–34. http://dx.doi.org/10.1039/c8tc06031b.

Повний текст джерела

Анотація:

Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Akinaga, Hiroyuki, and Hisashi Shima. "Resistive Random Access Memory (ReRAM) Based on Metal Oxides." Proceedings of the IEEE 98, no. 12 (December 2010): 2237–51. http://dx.doi.org/10.1109/jproc.2010.2070830.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Shan, Yingying, Zhensheng Lyu, Xinwei Guan, Adnan Younis, Guoliang Yuan, Junling Wang, Sean Li, and Tom Wu. "Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites." Physical Chemistry Chemical Physics 20, no. 37 (2018): 23837–46. http://dx.doi.org/10.1039/c8cp03945c.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Chen, Yu-Li, Mon-Shu Ho, Wen-Jay Lee, Pei-Fang Chung, Babu Balraj, and Chandrasekar Sivakumar. "The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)." Nanotechnology 31, no. 14 (January 16, 2020): 145709. http://dx.doi.org/10.1088/1361-6528/ab62ca.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Lee, Hong Sub, Kyung Mun Kang, Woo Je Han, Tae Won Lee, Chang Sun Park, Yong June Choi, and Hyung Ho Park. "A Study on the Resistive Switching of La_0.7Sr_0.3MnO₃ Film Using Spectromicroscopy." Applied Mechanics and Materials 597 (July 2014): 184–87. http://dx.doi.org/10.4028/www.scientific.net/amm.597.184.

Повний текст джерела

Анотація:

Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0.7Sr0.3.MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Moriyama, Takumi, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, and Kentaro Kinoshita. "Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results." MRS Advances 1, no. 49 (2016): 3367–72. http://dx.doi.org/10.1557/adv.2016.461.

Повний текст джерела

Анотація:

ABSTRACTFor practical use of Resistive Random Access Memory (ReRAM), understanding resistive switching mechanism in transition metal oxides (TMO) is important. Some papers predict its mechanism by using first principles calculation; for example, TMO become conductive by introducing oxygen vacancy in bulk single crystalline TMO. However, most of ReRAM samples have polycrystalline structures. In this paper, we introduced a periodic slab model to depict grain boundary and calculated the surface energy and density of states for surfaces of NiO with various orientations using first-principles calculation to consider the effect of grain boundaries for resistive switching mechanisms of ReRAM. As a results, vacancies can be formed on the side surface of grain more easily than in grain. Moreover, we showed that surface conductivity depends on surface orientation of NiO and the orientation of side surface of grain can change easily by introduction of vacancies, which is the switching mechanism of NiO-ReRAM

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Nakamura, Hisao, and Yoshihiro Asai. "Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models." Physical Chemistry Chemical Physics 18, no. 13 (2016): 8820–26. http://dx.doi.org/10.1039/c6cp00916f.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Lodhi, Anil, Shalu Saini, Anurag Dwivedi, Arpit Khandelwal, and Shree Prakash Tiwari. "Bipolar resistive switching properties of TiO _x /graphene oxide doped PVP based bilayer ReRAM." Journal of Micromechanics and Microengineering 32, no. 4 (February 21, 2022): 044001. http://dx.doi.org/10.1088/1361-6439/ac521f.

Повний текст джерела

Анотація:

Abstract In this paper, firstly, some recently explored promising materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance are discussed. Further, resistive switching behaviour of TiO x /graphene oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated. It was found that bipolar resistive switching behaviour is significantly enhanced by embedding 2D material such as GO in the organic polymer acting as switching layer. ReRAM devices with Ag/PVP:GO/TiO x /fluorine doped tin oxide (FTO) structure exhibited high ON/OFF current ratio (>103), low voltage operation, and high retention time. Bipolar resistive switching from these engineered active layers will have great potential for future large area and sustainable electronics.

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Красников, Г. Я., О. М. Орлов та В. В. Макеев. "ИССЛЕДОВАНИЕ ЭФФЕКТА ПЕРЕКЛЮЧЕНИЯ И ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ С РАЗНЫМИ ТИПАМИ МЕТАЛЛА ВЕРХНЕГО ЭЛЕКТРОДА, "Электронная техника. Серия 3. Микроэлектроника"". Электронная техника. Серия 3. Микроэлектроника, № 1 (2020): 42–46. http://dx.doi.org/10.7868/s2410993220010054.

Повний текст джерела

Анотація:

Мемристорная резистивная память с произвольным доступом (ReRAM, Resistive Random Access Memory) вместе с памятью с изменением фазового состояния (PCM, Phase Change Memory), магниторезистивной памятью с произвольным доступом (MRAM, Magnetoresistive Random Access Memory), сегнетоэлектрической памятью (FeRAM, Ferroelectric Memories) [4] являются востребованными видами энергонезависимой памяти на новых альтернативных принципах. Нитрид кремния является перспективным резистивным переключающим слоем для мемристоров. В данной работе проведено экспериментальное исследование эффекта переключения и переноса заряда в мемристоре на основе нитрида кремния для разных типов металла (Ni, Co, Cu) верхнего электрода.

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Min, Shin-Yi, and Won-Ju Cho. "Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation." Journal of Nanoscience and Nanotechnology 20, no. 8 (August 1, 2020): 4740–45. http://dx.doi.org/10.1166/jnn.2020.17805.

Повний текст джерела

Анотація:

In this study, we fabricated a resistive random access memory (ReRAM) of metal-insulator-metal structures using a hydrogen silsesquioxane (HSQ) film that was deposited by a low-cost solution process as a resistance switching (RS) layer. For post-deposition annealing (PDA) to improve the switching performance of HSQ-based ReRAMs, we applied high energy-efficient microwave irradiation (MWI). For comparison, ReRAMs with an as-deposited HSQ layer or a conventional thermally annealed (CTA) HSQ layer were also prepared. The RS characteristics, molecular structure modification of the HSQ layer, and reliability of the MWI-treated ReRAM were evaluated and compared with the as-deposited or CTA-treated devices. Typical bipolar RS (BRS) behavior was observed in all the fabricated HSQ-based ReRAM devices. In the low-voltage region of the high-resistance state (HRS) as well as the low-resistance state, current flows through the HSQ layer by an ohmic conduction mechanism. However, as the applied voltage increases in HRS, the current slope increases nonlinearly and follows the Poole–Frenkel conduction mechanism. The RS characteristics of the HSQ layer depend on the molecular structure, and when the PDA changes from a cage-like structure to a cross-linked network, memory characteristics are improved. In particular, the MWI-treated HSQ ReRAM has the largest memory window at the smallest operating power and demonstrated a stable endurance during the DC cycling test over 500 times and reliable retention at room (25 °C) and high (85 °C) temperatures for 104 seconds.

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Misawa, Naoko, Kenta Taoka, Chihiro Matsui, and Ken Takeuchi. "97.6% array area reduction, ReRAM computation-in-memory with hyperparameter optimization based on memory bit-error rate and bit precision of log-encoding simulated annealing." Japanese Journal of Applied Physics 61, SC (February 8, 2022): SC1001. http://dx.doi.org/10.35848/1347-4065/ac356f.

Повний текст джерела

Анотація:

Abstract This paper proposes small array area and memory error tolerant resistive random access memory (ReRAM) computation-in-memory (CiM) with hyperparameter optimization based on bit-error rate (BER) and bit precision of log-encoding simulated annealing (SA). For combinatorial optimization problems, the proposed ReRAM CiM with log-encoding SA reduces the array area by 97.6%, compared with the conventional linear-encoding. To analyze ReRAM device error characteristics, “0” and “1” error injection is applied. The asymmetric ReRAM error improves the acceptable BER by 10 times and the acceptable bit precision to 4 bit. By adjusting the random flips and a cooling parameter, the numbers of flips and iterations decrease by 40% and 33%, respectively. Error injected (EI) iteration is changed to reproduce bit-error due to read disturb. The delay of EI iteration increases the acceptable BER by 25%. Furthermore, in the case of requiring extremely high accuracy, hyperparameter optimization improves the probability of obtaining the optimal answer by 1%.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Froehlich, Saman, Saeideh Shirinzadeh, and Rolf Drechsler. "Parallel Computing of Graph-based Functions in ReRAM." ACM Journal on Emerging Technologies in Computing Systems 18, no. 2 (April 30, 2022): 1–24. http://dx.doi.org/10.1145/3453163.

Повний текст джерела

Анотація:

Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory technology. Besides its low power consumption and its high scalability, its inherent computation capabilities make ReRAM especially interesting for future computer architectures. Merging computations into the memory is a promising solution for overcoming the memory bottleneck. To perform computations in ReRAM, efficient synthesis strategies for Boolean functions have to be developed. In this article, we give a thorough presentation of how to employ parallel computing capabilities of ReRAM for the synthesis of functions given state-of-the-art graph-based representations AIGs or BDDs. Additionally, we introduce a new graph-based representation called m-And-Inverter Graph (m-AIGs), which allows us to fully exploit the computing capabilities of ReRAM. In the simulations, we show that our proposed approaches outperform state-of-the art synthesis strategies, and we show the superiority of m-AIGs over the standard AIG representation for ReRAM-based synthesis.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Elliman, R. G., M. S. Saleh, T. H. Kim, D. K. Venkatachalam, K. Belay, S. Ruffell, P. Kurunczi, and J. England. "Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 307 (July 2013): 98–101. http://dx.doi.org/10.1016/j.nimb.2012.11.094.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Kaushik, Shikha, Sujata Pandey, and Rahul Singhal. "Substrate Dependent Study of Mim Capacitors for Resistive Random-Access Memory Applications." ECS Transactions 107, no. 1 (April 24, 2022): 109–35. http://dx.doi.org/10.1149/10701.0109ecst.

Повний текст джерела

Анотація:

The present study focusses on the fabrication of Metal/MOx/Metal for ReRAM application. We evaluated I-V characteristics using pressure contact with both substrates and found that the silicon substrate has a relatively low switching rate (nearly linear curve), whereas the ITO substrate has a resistance ratio of 10, which gives the optimum switching performance. The identical model was developed in COMSOL software and used for validation, and the metal rich characteristics enhancement is studied. The stoichiometry of metal oxide film has been measured by Resonant Rutherford back Scattering (RRBS) of ZnO coated Au deposited Silicon. X-ray diffraction (XRD) analysis was used to characterize the crystalline structures of Au-deposited ZnO on ITO samples. It was observed that the desired (002)-oriented ZnO wurtzite phase exists. Raman parameters like force constant and bond length is calculated corresponding to the wave number.

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Lee, Dong Keun, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park. "Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application." Electronics 9, no. 8 (July 30, 2020): 1228. http://dx.doi.org/10.3390/electronics9081228.

Повний текст джерела

Анотація:

In this research, nano-wedge resistive switching random-access memory (ReRAM) based on a Si3N4 switching layer and silicon bottom electrode was fabricated, and its multilevel switching characteristics were investigated. The wedge bottom electrode was formed by a tetramethyl ammonium hydroxide (TMAH) wet-etching process. The nano-wedge ReRAM was demonstrated to have different reset current levels by varying the compliance currents. To explain the effect of modulating the compliance currents, the switching characteristics of both the SET and RESET behaviors were shown. After measuring the device under four different compliance currents, it was proved to have different current levels due to an inhibited resistive state after a SET switching process. Furthermore, SPICE circuit simulation was carried out to show the effect of line resistance on current summation for the array sizes of 8 × 8 and 16 × 16. These results indicate the importance of minimizing the line resistance for successful implementation as a hardware-based neural network.

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Park, Sukhyung, Kyoungah Cho, Jungwoo Jung, and Sangsig Kim. "Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7569–72. http://dx.doi.org/10.1166/jnn.2015.11138.

Повний текст джерела

Анотація:

In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics.

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Moriyama, Takumi, Ryosuke Koishi, Kouhei Kimura, Satoru Kishida, and Kentaro Kinoshita. "Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides." Advances in Science and Technology 95 (October 2014): 84–90. http://dx.doi.org/10.4028/www.scientific.net/ast.95.84.

Повний текст джерела

Анотація:

Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset)? Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted treset, Vreset, RL and Treset at the same time by combining two electrical measurements. As a result, we found a clear correlation between Vreset, RL, and Treset, meaning that each parameter can not be controlled independently. Tresetincreases not only with increasing Vresetbut also with increasing RL, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Chin, Fun-Tat, Yu-Hsien Lin, Wen-Luh Yang, Chin-Hsuan Liao, Li-Min Lin, Yu-Ping Hsiao, and Tien-Sheng Chao. "Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)." Solid-State Electronics 103 (January 2015): 190–94. http://dx.doi.org/10.1016/j.sse.2014.07.014.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Yoshitake, Michiko, Michal Vaclavu, Mykhailo Chundak, Vladimir Matolin, and Toyohiro Chikyow. "Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)." Journal of Solid State Electrochemistry 17, no. 12 (August 23, 2013): 3137–44. http://dx.doi.org/10.1007/s10008-013-2200-6.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Moriyama, Takumi, Sohta Hida, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, and Kentaro Kinoshita. "Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film." MRS Advances 2, no. 4 (2017): 229–34. http://dx.doi.org/10.1557/adv.2017.7.

Повний текст джерела

Анотація:

ABSTRACTPractical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in polycrystalline metal oxide films. Based on experimental and theoretical results of NiO based ReRAM, we have proposed a grain surface tiling model, in which grain surfaces (i.e. grain boundaries) are composed by insulating and conductive micro surface structures. This paper reports the adequacy of our model to the NiO based ReRAM and universality of surface electronic properties in metal oxides of NiO, CoO and MgO. Experimental results of RS operating modes suggest that the resistance changes in the grain boundaries, supporting our model. First-principles calculation results suggest that our model can be adopted to other metal oxide materials and the RS from a low resistance to a high resistance can be caused at 1000 K, which agrees with previous experimental reports.

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Lin, Yu-Hsuan, Dai-Ying Lee, Ming-Hsiu Lee, Po-Hao Tseng, Wei-Chen Chen, Kuang-Yeu Hsieh, Keh-Chung Wang, and Chih-Yuan Lu. "A novel 1T2R self-reference physically unclonable function suitable for advanced logic nodes for high security level applications." Japanese Journal of Applied Physics 61, SC (February 7, 2022): SC1003. http://dx.doi.org/10.35848/1347-4065/ac3a8d.

Повний текст джерела

Анотація:

Abstract A self-reference resistive random-access memory (ReRAM)-based one-transistor, two-ReRAM (1T2R) physically unclonable function (PUF) is proposed to provide a hardware security feature for electrical products in the IoT/5G era. There are four advantages from the proposed structure: (1) a small cell size; (2) intrinsic randomness; (3) no programming circuit; and (4) no data retention concerns. The conduction mechanism, temperature dependency, and read fluctuation of the pristine ReRAM device are studied. An information–address separation scheme is proposed which not only reduces the impact of the read noise and the temperature effect, but also improves system integrity against hardware attacks. The proposed 1T2R PUF unit also has great potential for use as a random seed for linear-feedback shift registers in pseudo random number generators with high unpredictability, good randomness, and a high data rate.

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Sivakumar, Chandrasekar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin та Mon-Shu Ho. "High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications". Nanomaterials 11, № 8 (6 серпня 2021): 2013. http://dx.doi.org/10.3390/nano11082013.

Повний текст джерела

Анотація:

One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Hai-yun, Peng, and Zhou Wen-gang. "Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM." Discrete Dynamics in Nature and Society 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/586842.

Повний текст джерела

Анотація:

There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Mittal, Sparsh. "A Survey of ReRAM-Based Architectures for Processing-In-Memory and Neural Networks." Machine Learning and Knowledge Extraction 1, no. 1 (April 30, 2018): 75–114. http://dx.doi.org/10.3390/make1010005.

Повний текст джерела

Анотація:

As data movement operations and power-budget become key bottlenecks in the design of computing systems, the interest in unconventional approaches such as processing-in-memory (PIM), machine learning (ML), and especially neural network (NN)-based accelerators has grown significantly. Resistive random access memory (ReRAM) is a promising technology for efficiently architecting PIM- and NN-based accelerators due to its capabilities to work as both: High-density/low-energy storage and in-memory computation/search engine. In this paper, we present a survey of techniques for designing ReRAM-based PIM and NN architectures. By classifying the techniques based on key parameters, we underscore their similarities and differences. This paper will be valuable for computer architects, chip designers and researchers in the area of machine learning.

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Won, Sang Hee, Seung Hee Go, and Jae Gab Lee. "Resistive Switching Characteristics in TiO₂ ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns." Solid State Phenomena 124-126 (June 2007): 603–6. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.603.

Повний текст джерела

Анотація:

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Huang, Chenglong, Nuo Xu, Wenqing Wang, Yihong Hu, and Liang Fang. "Conductance-Aware Quantization Based on Minimum Error Substitution for Non-Linear-Conductance-State Tolerance in Neural Computing Systems." Micromachines 13, no. 5 (April 24, 2022): 667. http://dx.doi.org/10.3390/mi13050667.

Повний текст джерела

Анотація:

Emerging resistive random-access memory (ReRAM) has demonstrated great potential in the achievement of the in-memory computing paradigm to overcome the well-known “memory wall” in current von Neumann architecture. The ReRAM crossbar array (RCA) is a promising circuit structure to accelerate the vital multiplication-and-accumulation (MAC) operations in deep neural networks (DNN). However, due to the nonlinear distribution of conductance levels in ReRAM, a large deviation exists in the mapping process when the trained weights that are quantized by linear relationships are directly mapped to the nonlinear conductance values from the realistic ReRAM device. This deviation degrades the inference accuracy of the RCA-based DNN. In this paper, we propose a minimum error substitution based on a conductance-aware quantization method to eliminate the deviation in the mapping process from the weights to the actual conductance values. The method is suitable for multiple ReRAM devices with different non-linear conductance distribution and is also immune to the device variation. The simulation results on LeNet5, AlexNet and VGG16 demonstrate that this method can vastly rescue the accuracy degradation from the non-linear resistance distribution of ReRAM devices compared to the linear quantization method.

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Kinoshita, Kentaro, Ryosuke Koishi, Takumi Moriyama, Kouki Kawano, Hidetoshi Miyashita, Sang-Seok Lee, and Satoru Kishida. "Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory." MRS Advances 1, no. 49 (2016): 3373–78. http://dx.doi.org/10.1557/adv.2016.449.

Повний текст джерела

Анотація:

ABSTRACTIt is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, trise, range by simulating VO migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM.

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Xi, Jun Hua, Xue Ping Chen, Hong Xia Li, Jun Zhang, and Zhen Guo Ji. "Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM." Advanced Materials Research 721 (July 2013): 194–98. http://dx.doi.org/10.4028/www.scientific.net/amr.721.194.

Повний текст джерела

Анотація:

ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Wei, Wei-Chen, Chuan-Jia Jhang, Yi-Ren Chen, Cheng-Xin Xue, Syuan-Hao Sie, Jye-Luen Lee, Hao-Wen Kuo, Chih-Cheng Lu, Meng-Fan Chang, and Kea-Tiong Tang. "A Relaxed Quantization Training Method for Hardware Limitations of Resistive Random Access Memory (ReRAM)-Based Computing-in-Memory." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6, no. 1 (June 2020): 45–52. http://dx.doi.org/10.1109/jxcdc.2020.2992306.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Rasool, Asif, R. Amiruddin, I. Raja Mohamed, and M. C. Santhosh Kumar. "Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer." Superlattices and Microstructures 147 (November 2020): 106682. http://dx.doi.org/10.1016/j.spmi.2020.106682.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Maejima, S., T. Sugie, K. Yamashita, and M. Noda. "Studies on Control of Oxygen Vacancies in MOD-made BaTiO3 Thin Film by Nitrogen Annealing to Improve Resistive Switching Behavior for ReRAM Application." MRS Advances 2, no. 4 (2017): 235–40. http://dx.doi.org/10.1557/adv.2017.10.

Повний текст джерела

Анотація:

ABSTRACTMetal Organic Decomposition (MOD)-made BaTiO3 (BT) thin films were prepared for Resistive Random Access Memory (ReRAM) under various annealing conditions and investigated for improving the properties of bipolar-type resistive switching, focusing on the relation between oxygen vacancies and the behavior of resistive hysteresis. BT thin films with both pre- and final- annealing in nitrogen showed the resistive hysteresis of bipolar-type switching with current ON/OFF ratios of 2 orders of magnitude for both bias polarities. Finally they showed the endurance property with the 106 switching cycles. It was suggested that oxygen vacancies near the oxide surface (both interfaces at metal electrode/oxide and between layer-by-layered oxide layers) are increased by N2 annealing and enhanced the interface-type resistive switching. Pre-annealing in N2 was also found to be very effective to improve endurance properties, implying that not only the electrode/oxide interface but also the middle part of the film would contribute the interface-type mechanism.

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Roy, Arijit, Min-Gyu Cho, and Pil-Ryung Cha. "Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study." Journal of Applied Physics 131, no. 18 (May 14, 2022): 185106. http://dx.doi.org/10.1063/5.0087758.

Повний текст джерела

Анотація:

The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters—in terms of the material and the processing—which control the growth of such CF are plenty. Extending the phase field technique for ReRAM systems presented by Roy and Cha [J. Appl. Phys. 128, 205102 (2020)], we could successfully model the complete SET (to attain low resistance state) and RESET (to attain high resistance state) processes due to the application of sweeping voltage. The key parameters that influence the stability of the multi-cycle I-V response or the endurance behavior are identified. The computational findings of the presented model ReRAM system are practical in correlating the multi-parametric influence with the stability, variability, and reliability of the endurance cycle that affect the device performance and also lead to the device failure. We believe that our computational approach of connecting the morphological changes of the CF with the electrical response has the potential to further understand and optimize the performance of the ReRAM devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Kinoshita, K., H. Noshiro, C. Yoshida, Y. Sato, M. Aoki, and Y. Sugiyama. "Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model." Journal of Materials Research 23, no. 3 (March 2008): 812–18. http://dx.doi.org/10.1557/jmr.2008.0093.

Повний текст джерела

Анотація:

We propose a parallel resistance model (PRM) in which total resistance (Rtotal) is given by the parallel connection of resistance of a filament (Rfila) and that of a film excluding the filament (Rexcl)—that is, 1/Rtotal = 1/Rfila + 1/Rexcl—to understand direct current (dc) electric properties of resistive random-access memory (ReRAM). To prove the validity of this model, the dependence of the resistance on temperature, R(T), and the relative standard deviation (RSD) of RHRS of Pt/NiO/Pt on the area of a top electrode, S, are investigated. It is clarified that both the R(T) and RSD depended on S, and all such dependencies can be explained by the PRM. The fact that Rtotal is decided by the magnitude relation between Rfila and Rexcl makes transport properties S-dependent and hinders the correct understanding of ReRAM. Smaller S is essential to observe the intrinsic transport properties of ReRAM filaments.

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Constantoudis, Vassilios, George Papavieros, Panagiotis Karakolis, Ali Khiat, Themistoklis Prodromakis, and Panagiotis Dimitrakis. "Impact of Line Edge Roughness on ReRAM Uniformity and Scaling." Materials 12, no. 23 (November 30, 2019): 3972. http://dx.doi.org/10.3390/ma12233972.

Повний текст джерела

Анотація:

We investigate the effects of Line Edge Roughness (LER) of electrode lines on the uniformity of Resistive Random Access Memory (ReRAM) device areas in cross-point architectures. To this end, a modeling approach is implemented based on the generation of 2D cross-point patterns with predefined and controlled LER and pattern parameters. The aim is to evaluate the significance of LER in the variability of device areas and their performances and to pinpoint the most critical parameters and conditions. It is found that conventional LER parameters may induce >10% area variability depending on pattern dimensions and cross edge/line correlations. Increased edge correlations in lines such as those that appeared in Double Patterning and Directed Self-assembly Lithography techniques lead to reduced area variability. Finally, a theoretical formula is derived to explain the numerical dependencies of the modeling method.

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Moriyama, T., K. Kinoshita, R. Koishi, and S. Kishida. "Pulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides." ECS Transactions 50, no. 34 (April 1, 2013): 55–60. http://dx.doi.org/10.1149/05034.0055ecst.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Li, Lei, and Guangming Li. "High-Performance Resistance-Switchable Multilayers of Graphene Oxide Blended with 1,3,4-Oxadiazole Acceptor Nanocomposite." Micromachines 10, no. 2 (February 20, 2019): 140. http://dx.doi.org/10.3390/mi10020140.

Повний текст джерела

Анотація:

Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory arrays. Uncontrollable oxygen functional groups of GO, however, restrict its application. To obtain stable memory performance, 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) a that can serve as 1,3,4-oxadiazole acceptor was carefully introduced onto the GO framework. Better stability was achieved by increasing the weight ratio of the chemical component from 2:1 to 10:1 in all GO-based solutions. Particularly, rewritable nonvolatile memory characteristics were dependent on the ratio between PBD and GO. PBD:GO devices with a proportion of 10:1 w/w exhibited better memory performance, possessed a higher ON/OFF ratio (>102) at a lower switching voltage of −0.67 V, and had a long retention ability. The interaction between PBD and GO can be demonstrated by transmission electron microscope, scanning electron microscope, thermogravimetric analysis, fourier transform infrared spectra, Raman spectra, X-ray diffraction, and fluorescence spectra. The superior ReRAM properties of the multilayers of GO blended with the PBD nanocomposite are attributed to electron traps caused by the strong electron acceptors.

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Bondavalli, Paolo, Marie Martin, Louiza Hamidouche, Alberto Montanaro, Aikaterini-Flora Trompeta, and Costas Charitidis. "Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method." Micromachines 10, no. 2 (January 29, 2019): 95. http://dx.doi.org/10.3390/mi10020095.

Повний текст джерела

Анотація:

This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray-gun deposition method, developed at Thales Research and Technology. This technique allows extremely uniform mats to be produced while heating the substrate at the boiling point of the solvent used for the suspensions. A thickness of around 150 nm of CNFs sandwiched between two metal layers (the metalized substrate and the top contacts) has been achieved, creating a Metal-Insulator-Metal (MIM) structure typical of ReRAM. After applying a bias, we were able to change the resistance of the oxidized layer between a low (LRS) and a high resistance state (HRS) in a completely reversible way. This is the first time that a scientific group has produced this kind of device using CNFs and these results pave the way for the further implementation of this kind of memory on flexible substrates.

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Joardar, Biresh Kumar, Janardhan Rao Doppa, Hai Li, Krishnendu Chakrabarty, and Partha Pratim Pande. "Learning to Train CNNs on Faulty ReRAM-based Manycore Accelerators." ACM Transactions on Embedded Computing Systems 20, no. 5s (October 31, 2021): 1–23. http://dx.doi.org/10.1145/3476986.

Повний текст джерела

Анотація:

The growing popularity of convolutional neural networks (CNNs) has led to the search for efficient computational platforms to accelerate CNN training. Resistive random-access memory (ReRAM)-based manycore architectures offer a promising alternative to commonly used GPU-based platforms for training CNNs. However, due to the immature fabrication process and limited write endurance, ReRAMs suffer from different types of faults. This makes training of CNNs challenging as weights are misrepresented when they are mapped to faulty ReRAM cells. This results in unstable training, leading to unacceptably low accuracy for the trained model. Due to the distributed nature of the mapping of the individual bits of a weight to different ReRAM cells, faulty weights often lead to exploding gradients. This in turn introduces a positive feedback in the training loop, resulting in extremely large and unstable weights. In this paper, we propose a lightweight and reliable CNN training methodology using weight clipping to prevent this phenomenon and enable training even in the presence of many faults. Weight clipping prevents large weights from destabilizing CNN training and provides the backpropagation algorithm with the opportunity to compensate for the weights mapped to faulty cells. The proposed methodology achieves near-GPU accuracy without introducing significant area or performance overheads. Experimental evaluation indicates that weight clipping enables the successful training of CNNs in the presence of faults, while also reducing training time by 4 X on average compared to a conventional GPU platform. Moreover, we also demonstrate that weight clipping outperforms a recently proposed error correction code (ECC)-based method when training is carried out using faulty ReRAMs.

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Bi, J. S., B. Li, K. Xi, L. Luo, L. L. Ji, H. B. Wang, and M. Liu. "Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM)." Microelectronics Reliability 100-101 (September 2019): 113443. http://dx.doi.org/10.1016/j.microrel.2019.113443.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Zhao, Li, Ai, and Wen. "Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering." Materials 12, no. 8 (April 18, 2019): 1282. http://dx.doi.org/10.3390/ma12081282.

Повний текст джерела

Анотація:

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Cambou, Bertrand Francis, and Saloni Jain. "Key Recovery for Content Protection Using Ternary PUFs Designed with Pre-Formed ReRAM." Applied Sciences 12, no. 4 (February 9, 2022): 1785. http://dx.doi.org/10.3390/app12041785.

Повний текст джерела

Анотація:

Physical unclonable functions, embedded in terminal devices, can be used as part of the recovery process of session keys that protect digital files. Such an approach is only valuable when the physical element offers sufficient tamper resistance. Otherwise, error correcting codes should be able to handle any variations arising from aging, and environmentally induced drifts of the terminal devices. The ternary cryptographic protocols presented in this paper, leverage the physical properties of resistive random-access memories operating at extremely low power in the pre-forming range to create an additional level of security, while masking the most unstable cells during key generation cycles. The objective is to reach bit error rates below the 10−3 range from elements subjected to drifts and environmental effects. We propose replacing the error correcting codes with light search engines, that use ciphertexts as helper data to reduce information leakage. The tamper-resistant schemes discussed in the paper include: (i) a cell-pairing differential method to hide the physical parameters; (ii) an attack detection system and a low power self-destruct mode; (iii) a multi-factor authentication, information control, and a one-time read-only function. In the experimental section, we describe how prototypes were fabricated to test and quantify the performance of the suggested methods, using static random access memory devices as the benchmark.

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Kaushik, Shikha, Sujata Pandey, and Rahul Singhal. "Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications." ECS Journal of Solid State Science and Technology 11, no. 3 (March 1, 2022): 035003. http://dx.doi.org/10.1149/2162-8777/ac5a6e.

Повний текст джерела

Анотація:

This study looks at the results of Resistive random-access memory (ReRAM) devices made by using structural layers of Gold (Au)/Zinc oxide (ZnO)/Indium tin oxide (ITO). An annealed device resistance ratio increases nonlinearly. After annealing, the resistance ratio was found to be 102 at 1 V. The device’s switching properties improved after annealing. Rutherford Backscattering Spectrometry (RBS) determine the thickness of the deposited zinc oxide layer, which was found to be approximately 140 ± 10 nm. The zinc atomic fractions were calculated to be 60 % and oxygen 40 % by the SIMNRA simulation. The ZnO-based structures were also characterized and analysed using (XRD) X-ray powder diffraction, (SEM) Scanning electron microscope, (AFM) Atomic force microscopy and (XPS) X-ray photoelectron spectroscopy. The current study reveals that annealing improves the performance of RRAM devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Mayahinia, Mahta, Abhairaj Singh, Christopher Bengel, Stefan Wiefels, Muath A. Lebdeh, Stephan Menzel, Dirk J. Wouters, et al. "A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs." ACM Journal on Emerging Technologies in Computing Systems 18, no. 2 (April 30, 2022): 1–25. http://dx.doi.org/10.1145/3451212.

Повний текст джерела

Анотація:

Conventional von Neumann architectures cannot successfully meet the demands of emerging computation and data-intensive applications. These shortcomings can be improved by embracing new architectural paradigms using emerging technologies. In particular, Computation-In-Memory (CiM) using emerging technologies such as Resistive Random Access Memory (ReRAM) is a promising approach to meet the computational demands of data-intensive applications such as neural networks and database queries. In CiM, computation is done in an analog manner; digitization of the results is costly in several aspects, such as area, energy, and performance, which hinders the potential of CiM. In this article, we propose an efficient Voltage-Controlled-Oscillator (VCO)–based analog-to-digital converter (ADC) design to improve the performance and energy efficiency of the CiM architecture. Due to its efficiency, the proposed ADC can be assigned in a per-column manner instead of sharing one ADC among multiple columns. This will boost the parallel execution and overall efficiency of the CiM crossbar array. The proposed ADC is evaluated using a Multiplication and Accumulation (MAC) operation implemented in ReRAM-based CiM crossbar arrays. Simulations results show that our proposed ADC can distinguish up to 32 levels within 10 ns while consuming less than 5.2 pJ of energy. In addition, our proposed ADC can tolerate ≈30% variability with a negligible impact on the performance of the ADC.

Стилі APA, Harvard, Vancouver, ISO та ін.

44

LI, HONGXIA, XIAOJUN LV, JUNHUA XI, XIN WU, QINAN MAO, QINGMIN LIU, and ZHENGUO JI. "EFFECTS OF TiOx INTERLAYER ON RESISTANCE SWITCHING OF Pt/TiOx/ZnO/n+-Si STRUCTURES." Surface Review and Letters 21, no. 05 (September 29, 2014): 1450061. http://dx.doi.org/10.1142/s0218625x14500619.

Повний текст джерела

Анотація:

In this paper, we fabricated Pt / TiO x/ ZnO / n +- Si structures by inserting TiO x interlayer between Pt top electrode (TE) and ZnO thin film for non-volatile resistive random access memory (ReRAM) applications. Effects of TiO x interlayer with different thickness on the resistance switching of Pt / TiO x/ ZnO / n +- Si structures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances of Pt / TiO x/ ZnO / n +- Si structures were investigated as a function of TiO x thickness. Switching cycling tests were attempted to evaluate the endurance reliability of Pt / TiO x/ ZnO / n +- Si structures. Additionally, the switching mechanism was analyzed by the filament model.

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Wu, Ernest, Franco Stellari, Leonidas Ocola, Martin Frank, Peilin Song, and Takashi Ando. "Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy." Applied Physics Letters 120, no. 13 (March 28, 2022): 132902. http://dx.doi.org/10.1063/5.0086202.

Повний текст джерела

Анотація:

In this work, we investigate spatial statistical properties of filament patterns in resistive random-access memory (ReRAM) devices measured from a newly developed near-infrared photon emission microscopy (PEM) [Stellari et al., IEEE Electron Device Lett. 42, 828 (2021); Stellari et al., in Proceedings of the 47th International Symposium for Testing and Failure Analysis Conference (ISTFA) (ASM International, 2021), pp. 115–121]. Unlike previous reports on uncorrelated filaments [Stellari et al., IEEE Electron Device Lett. 42, 828 (2021); Wu et al., Appl. Phys. Lett. 99, 093502 (2011)], we report a strong clustering and non-Poisson pattern of filaments constructed from individual devices. A Poisson-mixture model incorporating the clustering (attractive) effect is introduced with an excellent agreement with the PEM data for global and nearest-neighbor spatial statistics. On the other hand, a two-filament pattern is also detected within the ReRAM devices. We found that both attractive and repulsive interactions among the filaments are required in a Gibbs process to explain the filament spatial distribution. We implemented a birth-death algorithm using a Markov-chain Monte Carlo approach and achieve good agreement with the PEM data using a generalized Morse potential.

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Al-Mamun, Mohammad Shah, and Marius K. Orlowski. "Performance Degradation of Nanofilament Switching Due to Joule Heat Dissipation." Electronics 9, no. 1 (January 9, 2020): 127. http://dx.doi.org/10.3390/electronics9010127.

Повний текст джерела

Анотація:

When a memory cell of a Resistive Random Access Memory (ReRAM) crossbar array is switched repeatedly, a considerable amount of Joule heat is dissipated in the cell, and the heat may spread to neighboring cells that share one of the electrode lines with the heat source device. The remote heating of a probed memory cell by another cell allows separating the influence of temperature effects from the impact of the electric field on the resistive switching kinetics. We find that the cell-to-cell heat transfer causes severe degradation of electrical performance of the unheated neighboring cells. A metric for the thermal degradation of the I–V characteristics is established by a specific conditioning of a so-called “marginal” device used as a temperature-sensitive probe of electrical performance degradation. We find that even neighboring cells with no common metal electrode lines with the heated cell suffer substantial electrical performance degradation provided that intermediate cells of the array are set into a conductive state establishing a continuous thermal path via nanofilaments between the heated and probed cells. The cell-to-cell thermal cross-talk poses a serious electro-thermal reliability problem for the operation of a memory crossbar array requiring modified write/erase algorithms to program the cells (a thermal sneak path effect). The thermal cross-talk appears to be more severe in nanometer-sized memory arrays even if operated with ultra-fast, nanosecond-wide voltage/current pulses.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Tominov, Roman V., Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Aleksandr A. Fedotov, Evgeny G. Zamburg, Vladimir A. Smirnov, and Oleg A. Ageev. "Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films." Nanomaterials 10, no. 5 (May 25, 2020): 1007. http://dx.doi.org/10.3390/nano10051007.

Повний текст джерела

Анотація:

We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switching effect in ZnO nanocrystalline films is investigated. We demonstrated that nanocrystalline zinc oxide films, fabricated at certain regimes, show the electroforming-free resistive switching. It was shown, that the forming-free nanocrystalline ZnO film demonstrated a resistive switching effect and switched at a voltage 1.9 ± 0.2 V from 62.42 ± 6.47 (RHRS) to 0.83 ± 0.06 kΩ (RLRS). The influence of ZnO surface morphology on the resistive switching effect is experimentally investigated. It was shown, that the ZnO nanocrystalline film exhibits a stable resistive switching effect, which is weakly dependent on its nanoscale structure. The influence of technological parameters on the resistive switching effect in a forming-free ZnO nanocrystalline film is investigated. The results can be used for fabrication of new-generation micro- and nanoelectronics elements, including random resistive memory (ReRAM) elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Song, Xuefen, Hao Yin, Qing Chang, Yuchi Qian, Chongguang Lyu, Huihua Min, Xinrong Zong, et al. "One-Dimensional (NH=CINH₃)₃PbI₅ Perovskite for Ultralow Power Consumption Resistive Memory." Research 2021 (October 8, 2021): 1–9. http://dx.doi.org/10.34133/2021/9760729.

Повний текст джерела

Анотація:

Organic-inorganic hybrid perovskites (OIHPs) have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth, mobile ions, and adjustable dimensions. However, there is a lack of investigation on controllable fabrication and storage properties of one-dimensional (1D) OIHPs. Here, the growth of 1D (NH=CINH3)3PbI5 ((IFA)3PbI5) perovskite and related resistive memory properties are reported. The solution-processed 1D (IFA)3PbI5 crystals are of well-defined monoclinic crystal phase and needle-like shape with the length of about 6 mm. They exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206°C. Moreover, the (IFA)3PbI5 films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). To study the intrinsic electric properties of this anisotropic material, we constructed the simplest memory cell composed of only Au/(IFA)3PbI5/ITO, contributing to a high-compacted device with a crossbar array device configuration. The resistive random access memory (ReRAM) devices exhibit bipolar current-voltage (I-V) hysteresis characteristics, showing a record-low power consumption of ~0.2 mW among all OIHP-based memristors. Moreover, our devices own the lowest power consumption and “set” voltage (0.2 V) among the simplest perovskite-based memory devices (inorganic ones are also included), which are no need to require double metal electrodes or any additional insulating layer. They also demonstrate repeatable resistance switching behaviour and excellent retention time. We envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Alsaiari, Mabkhoot A., Nabil A. Alhemiary, Ahmad Umar, and Brian E. Hayden. "Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application." Ceramics International 46, no. 10 (July 2020): 16310–20. http://dx.doi.org/10.1016/j.ceramint.2020.03.188.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Sharma, Yogesh, Pankaj Misra, Shojan P. Pavunny, and Ram S. Katiyar. "Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications." MRS Proceedings 1729 (2015): 23–28. http://dx.doi.org/10.1557/opl.2015.92.

Повний текст джерела

Анотація:

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Стилі APA, Harvard, Vancouver, ISO та ін.

Статті в журналах з теми "Resistive random-access memory, ReRAM"

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями