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Статті в журналах з теми "ReRAM 3D"
Hudec, Boris, I.-Ting Wang, Wei-Li Lai, Che-Chia Chang, Peter Jančovič, Karol Fröhlich, Matej Mičušík, Mária Omastová, and Tuo-Hung Hou. "Interface engineered HfO2-based 3D vertical ReRAM." Journal of Physics D: Applied Physics 49, no. 21 (April 29, 2016): 215102. http://dx.doi.org/10.1088/0022-3727/49/21/215102.
Повний текст джерелаLee, Edward, Daehyun Kim, Jinwoo Kim, Sung Kyu Lim, and Saibal Mukhopadhyay. "A ReRAM Memory Compiler for Monolithic 3D Integrated Circuits in a Carbon Nanotube Process." ACM Journal on Emerging Technologies in Computing Systems 18, no. 1 (January 31, 2022): 1–20. http://dx.doi.org/10.1145/3466681.
Повний текст джерелаWalden, Candace, Devesh Singh, Meenatchi Jagasivamani, Shang Li, Luyi Kang, Mehdi Asnaashari, Sylvain Dubois, Bruce Jacob, and Donald Yeung. "Monolithically Integrating Non-Volatile Main Memory over the Last-Level Cache." ACM Transactions on Architecture and Code Optimization 18, no. 4 (December 31, 2021): 1–26. http://dx.doi.org/10.1145/3462632.
Повний текст джерелаKim, Bokyung, Edward Hanson, and Hai Li. "An Efficient 3D ReRAM Convolution Processor Design for Binarized Weight Networks." IEEE Transactions on Circuits and Systems II: Express Briefs 68, no. 5 (May 2021): 1600–1604. http://dx.doi.org/10.1109/tcsii.2021.3067840.
Повний текст джерелаSun, Chao, Kousuke Miyaji, Koh Johguchi, and Ken Takeuchi. "A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD." IEEE Transactions on Circuits and Systems I: Regular Papers 61, no. 2 (February 2014): 382–92. http://dx.doi.org/10.1109/tcsi.2013.2268111.
Повний текст джерелаHassanpour, Mehdi, Marc Riera, and Antonio González. "A Survey of Near-Data Processing Architectures for Neural Networks." Machine Learning and Knowledge Extraction 4, no. 1 (January 17, 2022): 66–102. http://dx.doi.org/10.3390/make4010004.
Повний текст джерелаGugnani, Shashank, Arjun Kashyap, and Xiaoyi Lu. "Understanding the idiosyncrasies of real persistent memory." Proceedings of the VLDB Endowment 14, no. 4 (December 2020): 626–39. http://dx.doi.org/10.14778/3436905.3436921.
Повний текст джерелаQolbi, M. Mahbub Jauhar, and Mochammad Choirur Roziqin. "Desain Ruang Unit Kerja Rekam Medis Berdasarkan Aspek Ergonomi Di Puskesmas Senduro." J-REMI : Jurnal Rekam Medik dan Informasi Kesehatan 4, no. 1 (December 29, 2022): 24–31. http://dx.doi.org/10.25047/j-remi.v4i1.3347.
Повний текст джерелаAmaral, Creusa Sayuri Tahara, Oreonnilda De Souza, Leiraud Hilkner de Souza, Gilson José da Silva, and Lucas Noboru Fatori Trevizan. "Novos caminhos da biotecnologia: As inovações da indústria 4.0 na saúde humana." Revista Brasileira Multidisciplinar 23, no. 3 (September 1, 2020): 203–31. http://dx.doi.org/10.25061/2527-2675/rebram/2020.v23i3.889.
Повний текст джерелаGomes Cardoso Gastaldi, Gabriela, Juliana Paula de Oliveira, Jorge Vicente Lopes da Silva, Rodrigo Alvarenga Rezende, and André Capaldo Amaral. "PHOTOBIOMODULATORY EFFECT OF LOW-INTENSITY LASER RADIATION ON MULTICELLULAR SPHEROIDS." Revista Brasileira Multidisciplinar 24, no. 2 (May 1, 2021): 156–67. http://dx.doi.org/10.25061/2527-2675/rebram/2021.v24i2.1136.
Повний текст джерелаДисертації з теми "ReRAM 3D"
Ezzadeen, Mona. "Conception d'un circuit dédié au calcul dans la mémoire à base de technologie 3D innovante." Electronic Thesis or Diss., Aix-Marseille, 2022. http://theses.univ-amu.fr.lama.univ-amu.fr/221212_EZZADEEN_955e754k888gvxorp699jljcho_TH.pdf.
Повний текст джерелаWith the advent of edge devices and artificial intelligence, the data deluge is a reality, making energy-efficient computing systems a must-have. Unfortunately, classical von Neumann architectures suffer from the high cost of data transfers between memories and processing units. At the same time, CMOS scaling seems more and more challenging and costly to afford, limiting the chips' performance due to power consumption issues.In this context, bringing the computation directly inside or near memories (I/NMC) seems an appealing solution. However, data-centric applications require an important amount of non-volatile storage, and modern Flash memories suffer from scaling issues and are not very suited for I/NMC. On the other hand, emerging memory technologies such as ReRAM present very appealing memory performances, good scalability, and interesting I/NMC features. However, they suffer from variability issues and from a degraded density integration if an access transistor per bitcell (1T1R) is used to limit the sneak-path currents. This thesis work aims to overcome these two challenges. First, the variability impact on read and I/NMC operations is assessed and new robust and low-overhead ReRAM-based boolean operations are proposed. In the context of neural networks, new ReRAM-based neuromorphic accelerators are developed and characterized, with an emphasis on good robustness against variability, good parallelism, and high energy efficiency. Second, to resolve the density integration issues, an ultra-dense 3D 1T1R ReRAM-based Cube and its architecture are proposed, which can be used as a 3D NOR memory as well as a low overhead and energy-efficient I/NMC accelerator
Тези доповідей конференцій з теми "ReRAM 3D"
Fukuda, Natsuki, Yutaka Nishioka, and Koukou Suu. "TaOx-based ReRAM stack with NbOx-based selector for 3D cross-point ReRAM application." In 2014 Silicon Nanoelectronics Workshop (SNW). IEEE, 2014. http://dx.doi.org/10.1109/snw.2014.7348604.
Повний текст джерелаLee, Edward, Daehyun Kim, Venkata Chaitanya Krishna Chekuri, Yun Long, and Saibal Mukhopadhyay. "A ReRAM Memory Compiler with Layout-Precise Performance Evaluation." In 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). IEEE, 2019. http://dx.doi.org/10.1109/s3s46989.2019.9320750.
Повний текст джерелаYi-Chung Chen, Hai Li, Yiran Chen, and R. E. Pino. "3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers." In 2011 Design, Automation & Test in Europe. IEEE, 2011. http://dx.doi.org/10.1109/date.2011.5763289.
Повний текст джерелаHuangfu, Wenqin, Shuangchen Li, Xing Hu, and Yuan Xie. "RADAR: A 3D-ReRAM based DNA Alignment Accelerator Architecture." In 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC). IEEE, 2018. http://dx.doi.org/10.1109/dac.2018.8465882.
Повний текст джерелаAdam, Gina C., Bhaswar Chrakrabarti, Hussein Nili, Brian Hoskins, Miguel A. Lastras-Montano, Advait Madhavan, Melika Payvand, et al. "3D ReRAM arrays and crossbars: Fabrication, characterization and applications." In 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2017. http://dx.doi.org/10.1109/nano.2017.8117387.
Повний текст джерелаVelasquez, Alvaro, and Sumit Kumar Jha. "Computation of Boolean matrix chain products in 3D ReRAM." In 2017 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2017. http://dx.doi.org/10.1109/iscas.2017.8050962.
Повний текст джерелаChien, W. C., F. M. Lee, Y. Y. Lin, M. H. Lee, S. H. Chen, C. C. Hsieh, E. K. Lai, et al. "Multi-layer sidewall WOX resistive memory suitable for 3D ReRAM." In 2012 IEEE Symposium on VLSI Technology. IEEE, 2012. http://dx.doi.org/10.1109/vlsit.2012.6242507.
Повний текст джерелаHuang, Yu, Long Zheng, Xiaofei Liao, Hai Jin, Pengcheng Yao, and Chuangyi Gui. "RAGra: Leveraging Monolithic 3D ReRAM for Massively-Parallel Graph Processing." In 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE). IEEE, 2019. http://dx.doi.org/10.23919/date.2019.8715192.
Повний текст джерелаLiu, Bosheng, Zhuoshen Jiang, Jigang Wu, Xiaoming Chen, Yinhe Han, and Peng Liu. "F3D: Accelerating 3D Convolutional Neural Networks in Frequency Space Using ReRAM." In 2021 58th ACM/IEEE Design Automation Conference (DAC). IEEE, 2021. http://dx.doi.org/10.1109/dac18074.2021.9586135.
Повний текст джерелаAmir, Mohammad Faisal, and Saibal Mukhopadhyay. "3D Stacked High Throughput Pixel Parallel Image Sensor with Integrated ReRAM Based Neural Accelerator." In 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). IEEE, 2018. http://dx.doi.org/10.1109/s3s.2018.8640151.
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