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Статті в журналах з теми "Reliability characterization"

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Автор: Grafiati

Опубліковано: 14 березня 2023

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1

Amirabdollahian, Mahsa, and Bithin Datta. "Reliability Evaluation of Groundwater Contamination Source Characterization under Uncertain Flow Field." International Journal of Environmental Science and Development 6, no. 7 (2015): 512–18. http://dx.doi.org/10.7763/ijesd.2015.v6.647.

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2

Tsuchiya, Toshiyuki. "Reliability Characterization of MEMS Materials." IEEJ Transactions on Sensors and Micromachines 125, no. 7 (2005): 289–93. http://dx.doi.org/10.1541/ieejsmas.125.289.

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3

Song, William, Saibal Mukhopadhyay, and Sudhakar Yalamanchili. "Architectural Reliability: Lifetime Reliability Characterization and Management ofMany-Core Processors." IEEE Computer Architecture Letters 14, no. 2 (July 1, 2015): 103–6. http://dx.doi.org/10.1109/lca.2014.2340873.

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4

Yang, Q. J., H. L. J. Pang, Z. P. Wang, G. H. Lim, F. F. Yap, and R. M. Lin. "Vibration reliability characterization of PBGA assemblies." Microelectronics Reliability 40, no. 7 (July 2000): 1097–107. http://dx.doi.org/10.1016/s0026-2714(00)00036-6.

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5

Ekwueme, Chukwuma G., and Gary C. Hart. "Structural reliability characterization of precast concrete." Structural Design of Tall Buildings 3, no. 1 (March 1994): 13–35. http://dx.doi.org/10.1002/tal.4320030103.

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6

Lee, J. C., Chen Ih-Chin, and Hu Chenming. "Modeling and characterization of gate oxide reliability." IEEE Transactions on Electron Devices 35, no. 12 (1988): 2268–78. http://dx.doi.org/10.1109/16.8802.

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7

Cheng, Bowen, Dirk De Bruyker, Chris Chua, Kunal Sahasrabuddhe, Ivan Shubin, John E. Cunningham, Ying Luo, Karl F. Bohringer, Ashok V. Krishnamoorthy, and Eugene M. Chow. "Microspring Characterization and Flip-Chip Assembly Reliability." IEEE Transactions on Components, Packaging and Manufacturing Technology 3, no. 2 (February 2013): 187–96. http://dx.doi.org/10.1109/tcpmt.2012.2213250.

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8

Claeys, C., E. Simoen, J. M. Rafi, Marcelo A. Pavanello, and Joao A. Martino. "Physical Characterization and Reliability Aspects of MuGFETs." ECS Transactions 9, no. 1 (December 19, 2019): 281–94. http://dx.doi.org/10.1149/1.2766899.

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9

Sheikh, A. "A reliability model for fatigue life characterization." International Journal of Fatigue 17, no. 2 (February 1995): 121–28. http://dx.doi.org/10.1016/0142-1123(95)95891-j.

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10

Shaddock, David, and Liang Yin. "Reliability of High Temperature Laminates." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000100–000110. http://dx.doi.org/10.4071/hiten-session3b-paper3b_1.

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Анотація:

Printed circuit boards have been reported to have limited lifetime at 200 to 250°C. Characterization of high temperature laminates for application at 200 to 250°C was conducted to better quantify their lifetime using accelerated testing of key functional parameters. Eight high temperature laminates consisting of 3 material types was evaluated. Life testing was applied for via cyclic life, weight loss, peel strength, and surface insulation resistance. Via lifetime was characterization using Interconnect Stress Test (IST) coupons. Weight loss was measured at intervals during the life of the tests. Peel strength was tested using IPC IPC-TM-650 method 2.4.8c. Weight loss was characterized using isothermal aging. Comparison of lifetime is made between the laminate samples. The non-polyimide laminates exhibited the longer life times than polyimide laminates in most tests except peel strength. Peel strength is the life limiting parameter for the laminates. Parylene HT was found to improve stability in peel strength and weight loss of one PTFE laminate tested.

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11

NAYAK, AMIYA, and NICOLA SANTORO. "ON RELIABILITY ANALYSIS OF CHORDAL RINGS." Journal of Circuits, Systems and Computers 05, no. 02 (June 1995): 199–213. http://dx.doi.org/10.1142/s0218126695000151.

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A common technique to improve the reliability of loop (or ring) networks is by introducing link redundancy; that is, by providing several alternative paths for communication between pairs of nodes. With alternate paths between nodes, the network can now sustain several node and link failures by bypassing the faulty components. However, faults occurring at strategic locations in a ring can prevent the computation by disrupting I/O operations, blocking the flow of information, or even segmenting the structure into pieces which can no longer be suitable for any practical purpose. An extensive characterization of fault-tolerance in ring topologies is given in this paper. This characterization augments the results known in the literature to date. The characterization has revealed several properties which describe the problem of constructing subrings and linear arrays in the presence of node failures in the original ring for a specified link configuration. Also in this paper, bounds are established on the degree of fault tolerance achievable in a redundant loop network, with a given degree of redundancy, when performing a computation that requires a minimal number of operational nodes. Also the bounds on the size of the problems guaranteed to be solved in the presence of a given number of faults in the network are derived.

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12

W., TAZBIT, and MIALHE P. "RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION." International Conference on Applied Mechanics and Mechanical Engineering 13, no. 13 (May 1, 2008): 29–37. http://dx.doi.org/10.21608/amme.2008.39820.

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13

Tu, Zhijuan, Zhiping Zhou, and Xingjun Wang. "Reliability characterization of silicon-based germanium waveguide photodetectors." Optical Engineering 53, no. 5 (May 5, 2014): 057103. http://dx.doi.org/10.1117/1.oe.53.5.057103.

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14

Doyle, R., B. O'Flynn, W. Lawton, J. Barrett, and J. Buckley. "Glob-top reliability characterization: evaluation and analysis methods." IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 21, no. 2 (June 1998): 292–300. http://dx.doi.org/10.1109/95.705478.

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15

Ross, R. G., G. R. Mon, L. Wen, C. C. Gonzalez, and R. S. Sugimura. "Measurement and characterization of thin film module reliability." Solar Cells 24, no. 3-4 (July 1988): 271–78. http://dx.doi.org/10.1016/0379-6787(88)90078-6.

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16

van Beek, Andries, Peter Borm, and Marieke Quant. "Axiomatic Characterizations of a Proportional Influence Measure for Sequential Projects with Imperfect Reliability." Axioms 10, no. 4 (September 30, 2021): 247. http://dx.doi.org/10.3390/axioms10040247.

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Анотація:

We define and axiomatically characterize a new proportional influence measure for sequential projects with imperfect reliability. We consider a model in which a finite set of players aims to complete a project, consisting of a finite number of tasks, which can only be carried out by certain specific players. Moreover, we assume the players to be imperfectly reliable, i.e., players are not guaranteed to carry out a task successfully. To determine which players are most important for the completion of a project, we use a proportional influence measure. This paper provides two characterizations of this influence measure. The most prominent property in the first characterization is task decomposability. This property describes the relationship between the influence measure of a project and the measures of influence one would obtain if one divides the tasks of the project over multiple independent smaller projects. Invariance under replacement is the most prominent property of the second characterization. If, in a certain task group, a specific player is replaced by a new player who was not in the original player set, this property states that this should have no effect on the allocated measure of influence of any other original player.

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17

Li, Qingshen, Yigang Lin, Shoudong Wang, Shanshan Wang, and Xiangou Zhu. "Storage Reliability Assessment Method for Aerospace Electromagnetic Relay Based on Belief Reliability Theory." Applied Sciences 12, no. 17 (August 29, 2022): 8637. http://dx.doi.org/10.3390/app12178637.

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Анотація:

The aerospace electromagnetic relay (AEMR) is a key electronic component in aerospace and weaponry systems. It usually lacks sufficient test data to conduct an effective storage reliability assessment at its early development stage. Thus, this paper introduces the theory of belief reliability, a new theory in the field of reliability engineering. Under its theoretical framework, firstly, through the analysis of the storage degradation mechanism of AEMR, the performance degradation characterization parameters are selected to build a storage degradation model. Then, the failure criterion conditions of AEMR are analyzed, and the degradation characterization parameters are used as the ‘smaller the better’ performance parameters to build a margin equation. Then, the margin equation is combined with the storage degradation model, and the uncertainties of the model parameters are quantified to complete the belief reliability model of AEMR. Finally, a certain AEMR is used as the object for validation. In solving the belief reliability model, the manufacturing information of the product, the degradation simulation data, and the test data are fully utilized to solve the model parameters by utilizing the uncertainty maximum likelihood estimation (UMLE) method. The results show that the method can obtain more accurate assessment results with small test data samples, and the MAE is reduced, compared to only simulation data, by 29.3%. By analyzing the uncertainty of the model parameters, it is found that the main sensitive factor affecting the storage reliability of batch aerospace relays is the initial release time. It was also found that the accuracy of the calculations could be significantly improved by considering the uncertainty of the threshold values when calculating.

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18

Dolnicar, Peter, Drago Milosevic, Zoran Jovovic, Vladimir Meglic, Marko Maras, and Ana Velimirovic. "Reliability of morphological and molecular characterization of lightsprouts for differentiation of potato accessions." Genetika 48, no. 2 (2016): 525–32. http://dx.doi.org/10.2298/gensr1602525d.

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The study of reliability of morphological characterization of lightsprouts for differentiation of potato varieties was performed at the Agricultural Institute of Slovenia in cooperation with Biotechnical Faculty Podgorica in order to introduce simple method for further characterization of potato accessions in Montenegrin gene bank. Seven selected, potentially different, potato accessions preserved in the Montenegrin gene bank were used for morphological characterization of lightsprouts. Using UPOV guidelines 11 lightsprout traits were estimated. Molecular assessment was carried out in parallel with morphological characterization by six microsatellite (SSR) markers. The latter successfully distinguished all accessions but two, while four different lightsprout phenotypes were identified in morphological characterization. Though molecular markers showed more strength in resolving relationships between genotypes, characterization of lightsprouts still demonstrated its usefulness due to cheap, simple and rapid procedure.

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19

Badger, Lacey L., Nikholas G. Toledo, Derek W. Slottke, John Thomas, Miguel Alamillo, Elliott Gunnarsson, Mark L. Le Rutt, and Ilan Tsameret. "Ultra-Fine Pitch Wedge bonding for Device Reliability Characterization." International Symposium on Microelectronics 2018, no. 1 (October 1, 2018): 000561–65. http://dx.doi.org/10.4071/2380-4505-2018.1.000561.

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Abstract Intel's EM (electromigration) package level stress lab has historically used 1mil aluminum wire to bond to pads 53 μm by 60 μm, with a pitch of 86 μm by 88 μm. The lab was challenged to align its wedge bonding capabilities to match the pitch used at wafer level probing with a pad size of 30 μm by 37 μm and pitch of 43 μm by 50.6 μm. In order to achieve the 43 μm by 50.6 μm pitch, 0.7 mil aluminum wire and an ultra-fine pitch wedge was used. In this paper, the benefits or matching the wafer level probe card capabilities are discussed as well as the concerns and considerations of implementing such a small pitch process. The primary concerns are heel shorting and bond placement repeatability but many factors influence these parameters. A brief summary of electrical testing performed to validate the process is discussed as well as new challenges that have arose due to the new testing capabilities.

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20

Cholda, Piotr, Janos Tapolcai, Tibor Cinkler, Krzysztof Wajda, and Andrzej Jajszczyk. "Quality of resilience as a network reliability characterization tool." IEEE Network 23, no. 2 (March 2009): 11–19. http://dx.doi.org/10.1109/mnet.2009.4804331.

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21

Lin, Hua Tay, and Mattison K. Ferber. "Characterization of Mechanical Reliability of Silicon Nitride Microturbine Rotors." Key Engineering Materials 287 (June 2005): 393–403. http://dx.doi.org/10.4028/www.scientific.net/kem.287.393.

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This paper summarizes the recent results on component characterization efforts carried out to verify the mechanical reliability of SN237 and SN281 silicon nitride microturbine rotors manufactured by Kyocera. Mechanical properties of biaxial discs machined from airfoils of microturbine rotors were evaluated by a ball-on-ring test technique. Results showed that the mechanical properties of samples from airfoils with as–processed surfaces exhibited lower characteristic strength than those machined from the hub region with as-machined surfaces. The differences in mechanical performance and reliability between asprocessed components and simple-shaped test coupons appear to arise mainly from differences in strength limiting flaw type and population.

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22

Castellazzi, Alberto, and Mauro Ciappa. "Electrothermal Characterization for Reliability of Modern Low-Voltage PowerMOSFETs." IEEE Transactions on Device and Materials Reliability 7, no. 4 (December 2007): 571–80. http://dx.doi.org/10.1109/tdmr.2007.910439.

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23

Sy, Fatoumata, Quentin Rafhay, Julien Poette, Gregory Grosa, Gaelle Beylier, Philippe Grosse, David Roy, and Jean-Emmanuel Broquin. "Reliability Characterization and Modeling of High Speed Ge Photodetectors." IEEE Transactions on Device and Materials Reliability 19, no. 4 (December 2019): 688–95. http://dx.doi.org/10.1109/tdmr.2019.2945996.

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24

Duong, Q. H., L. Buchaillot, D. Collard, P. Schmitt, X. Lafontan, P. Pons, F. Flourens, and F. Pressecq. "Thermal and electrostatic reliability characterization in RF MEMS switches." Microelectronics Reliability 45, no. 9-11 (September 2005): 1790–93. http://dx.doi.org/10.1016/j.microrel.2005.07.095.

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25

Tazibt, W., P. Mialhe, J. P. Charles, and M. A. Belkhir. "A junction characterization for microelectronic devices quality and reliability." Microelectronics Reliability 48, no. 3 (March 2008): 348–53. http://dx.doi.org/10.1016/j.microrel.2007.06.002.

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26

Matmat, Mohamed, Fabio Coccetti, Antoine Marty, Robert Plana, Christophe Escriba, Jean-Yves Fourniols, and Daniel Esteve. "Capacitive RF MEMS analytical predictive reliability and lifetime characterization." Microelectronics Reliability 49, no. 9-11 (September 2009): 1304–8. http://dx.doi.org/10.1016/j.microrel.2009.06.049.

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27

Bernal, S., F. J. Botana, R. García, F. Ramírez, and J. M. Rodríguez-Izquierdo. "Characterization of an experimental TPD-MS system. Reliability problems." Thermochimica Acta 98 (February 1986): 319–26. http://dx.doi.org/10.1016/0040-6031(86)87102-7.

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28

Dubey, Vaibhav, and Deepak Khushalani. "Reliability characterization of MEMS switch using MIM test structures." Journal of Electrical Systems and Information Technology 1, no. 3 (December 2014): 187–97. http://dx.doi.org/10.1016/j.jesit.2014.12.002.

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29

Martin, Andreas. "Review on the reliability characterization of plasma-induced damage." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 1 (2009): 426. http://dx.doi.org/10.1116/1.3054356.

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30

Suehle, J. S. "Ultrathin gate oxide reliability: physical models, statistics, and characterization." IEEE Transactions on Electron Devices 49, no. 6 (June 2002): 958–71. http://dx.doi.org/10.1109/ted.2002.1003712.

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31

Liu, Hongxia, and Yue Hao. "A new method of thin gate SiO2 reliability characterization." Surface and Interface Analysis 34, no. 1 (2002): 437–40. http://dx.doi.org/10.1002/sia.1333.

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32

Lall, Pradeep, Michael Pecht, and Edward B. Hakim. "Characterization of functional relationship between temperature and microelectronic reliability." Microelectronics Reliability 35, no. 3 (March 1995): 377–402. http://dx.doi.org/10.1016/0026-2714(95)93067-k.

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33

Dugan, M. Patrick. "Reliability characterization of a 3-mum cmos/sos process." Quality and Reliability Engineering International 3, no. 2 (April 1987): 99–105. http://dx.doi.org/10.1002/qre.4680030207.

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34

Sundresh, Tippure S. "Macroscopic characterization of software and its relationship to reliability." Bell Labs Technical Journal 10, no. 1 (May 5, 2005): 169–74. http://dx.doi.org/10.1002/bltj.20086.

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35

Calò, C., A. Lay-Ekuakille, P. Vergallo, C. Chiffi, A. Trotta, A. Fasanella, and A. M. Fasanella. "Measurements and Characterization of Photovoltaic Modules for Tolerance Verification." International Journal of Measurement Technologies and Instrumentation Engineering 1, no. 2 (April 2011): 73–83. http://dx.doi.org/10.4018/ijmtie.2011040106.

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Анотація:

One of the most important aspects of photovoltaic modules is reliability for future uses, that is, a certain module will last certain number of years in use (generally 30 or 35 years). Reliability yields from excellent qualification tests on photovoltaic (PV) modules. Testing for reliability identifies unknown failure mechanisms and whether modules are susceptible to known failure mechanisms. This paper illustrates techniques of outdoor measurements and qualification characterization to know PV module conditions for commercial uses. Matrix methods are used for energy prediction. Failure material tests, using digital imaging and thermography, have also been conducted.

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36

Rushdi, Ali Muhammad Ali, and Fares Ahmad Muhammad Ghaleb. "Reliability Characterization of Binary-Imaged Multi-State Coherent Threshold Systems." International Journal of Mathematical, Engineering and Management Sciences 6, no. 1 (October 29, 2020): 309–21. http://dx.doi.org/10.33889/ijmems.2021.6.1.020.

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A notable reliability model is the binary threshold system (also called the weighted-k-out-of-n system), which is a dichotomous system that is successful if and only if the weighted sum of its component successes exceeds or equals a particular threshold. The aim of this paper is to extend the utility of this model to the reliability analysis of a homogeneous binary-imaged multi-state coherent threshold system of (m+1) states, which is a non-repairable system with independent non-identical components. The paper characterizes such a system via switching-algebraic expressions of either system success or system failure at each non-zero level. These expressions are given either (a) as minimal sum-of-products formulas, or (b) as probability–ready expressions, which can be immediately converted, on a one-to-one basis, into probabilities or expected values. The various algebraic characterizations can be supplemented by a multitude of map representations, including a single multi-value Karnaugh map (MVKM) (giving a superfluous representation of the system structure function S), (m+1) maps of binary entries and multi-valued inputs representing the binary instances of S, or m maps, again of binary entries and multi-valued inputs, but now representing the success/failure at every non-zero level of the system. We demonstrate how to reduce these latter maps to conventional Karnaugh maps (CKMs) of much smaller sizes. Various characterizations are inter-related, and also related to pertinent concepts such as shellability of threshold systems, and also to characterizations via minimal upper vectors or via maximal lower vectors.

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37

Resch-Genger, Ute, and Paul C. DeRose. "Characterization of photoluminescence measuring systems (IUPAC Technical Report)." Pure and Applied Chemistry 84, no. 8 (June 4, 2012): 1815–35. http://dx.doi.org/10.1351/pac-rep-10-07-07.

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Анотація:

Procedures for the characterization of photoluminescence measuring systems are discussed, focusing on spectrofluorometers and fit-for-purpose methods including suitable standards. The aim here is to increase the awareness for the importance of a reliable instrument characterization and to improve the reliability and comparability of measurements of photoluminescence.

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38

Zaghloul, Usama, George J. Papaioannou, Bharat Bhushan, Fabio Coccetti, Patrick Pons, and Robert Plana. "New insights into reliability of electrostatic capacitive RF MEMS switches." International Journal of Microwave and Wireless Technologies 3, no. 5 (September 1, 2011): 571–86. http://dx.doi.org/10.1017/s1759078711000766.

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Анотація:

Among other reliability concerns, the dielectric charging is considered the major failure mechanism which hinders the commercialization of electrostatic capacitive radio frequency micro-electro-mechanical systems (RF MEMS) switches. In this study, Kelvin probe force microscopy (KPFM) surface potential measurements have been employed to study this phenomenon. Several novel KPFM-based characterization methods have been proposed to investigate the charging in bare dielectric films, metal–insulator–metal (MIM) capacitors, and MEMS switches, and the results from these methods have been correlated. The used dielectric material is plasma-enhanced chemical vapor deposition (PECVD) silicon nitride. The SiNx films have been charged by using a biased atomic force microscope (AFM) tip or by electrically stressing MIM capacitors and MEMS switches. The influence of several parameters on the dielectric charging has been studied: dielectric film thickness, deposition conditions, and under layers. Fourier transform infra-red (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) material characterization techniques have been used to determine the chemical bonds and compositions, respectively, of the SiNx films. The data from the physical material characterization have been correlated to the KPFM results. The study provides an accurate understanding of the charging/discharging processes in dielectric films implemented in electrostatic MEMS devices.

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39

Shaddock, David, Liang Yin, Zhenzhen Shen, Zhangming Zhou, and R. Wayne Johnson. "DIP Test Socket Characterization for 300°C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000213–19. http://dx.doi.org/10.4071/hiten-wa12.

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Анотація:

Demonstrating functional reliability testing of high temperature electronic devices for long lifetime at 300°C requires electrical test fixtures with even better reliability. Advances in complexity of SiC devices and the need for increased accelerated tests motivate the need for a reliable test fixture at high temperature. The design, fabrication and testing of a prototype test board using commercially available materials shows stability beyond 2000 hours. The approach uses an alumina circuit board with thick film conductors interconnecting an array of BeNi contacts to surface pads. The pads are connected to high temperature wires using spring loaded contacts so that the circuit board may be removed.

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40

Park, Heejin. "Reliability Evaluation Through Moisture Sorption Characterization of Electronic Packaging Materials." Transactions of the Korean Society of Mechanical Engineers A 37, no. 9 (September 1, 2013): 1151–58. http://dx.doi.org/10.3795/ksme-a.2013.37.9.1151.

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41

Bruinsma, Wendy E., Thierry G. Guitton, Jon JP Warner, and David Ring. "Interobserver Reliability of Classification and Characterization of Proximal Humeral Fractures." Journal of Bone and Joint Surgery-American Volume 95, no. 17 (September 2013): 1600–1604. http://dx.doi.org/10.2106/jbjs.l.00586.

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42

AMAGAI, Masazumi. "Chip Scale Package Solder Joint Reliability Modeling and Material Characterization." Journal of Japan Institute of Electronics Packaging 3, no. 1 (2000): 45–56. http://dx.doi.org/10.5104/jiep.3.45.

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43

Mathew, Varughese, and Tu Anh Tran. "Characterization of Over Pad Metallization (OPM) for High Temperature Reliability." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 001097–104. http://dx.doi.org/10.4071/isom-2012-thp32.

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Анотація:

Temperature is a key accelerating factor for failures in semiconductor devices which brings reliability challenges for electronic packaging process because of the thermo-mechanical, metallurgical and chemical properties of the materials used in packaging. Failures at high temperatures (≥ 175 °C) often originate from aluminum – gold wirebonding systems because of the formation of Au-Al intermetallic phases and associated Kirkendall voiding which degrade the interface. A stack of Nickel/Palladium /Gold (Over Pad Metallization or OPM) formed on aluminum or copper bond pads are reported to be reliable pad finishing for high temperature applications. In this study OPM stack is formed by electroless plating on aluminum bond pads separated by 10 μm or more and the process is optimized to achieve high process yields. Al bond pad contamination is shown to be an important factor for achieving good plating quality and yield. Various plating defects which can lead to electrical failures are characterized. It is shown that defective rough plating can lead to wirebonding failures such as non-stick on pads (NSOP). Interface of gold ball bond and OPM after thermal aging at 225 °C for 168 hours is characterized by High Resolution Transmission Electron Microscopy (TEM) and Focused ion beam (FIB) cross-section analysis. Excellent thermal reliability with no degradation of ball shear or wire pull strengths achieved with non-defective OPM pads. High temperature (175 °C) package reliability with OPM is demonstrated for gold and copper wires.

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44

Das, H., S. Sunkari, M. Domeij, A. Konstantinov, F. Allerstam, and T. Neyer. "(Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization." ECS Transactions 69, no. 11 (October 2, 2015): 29–32. http://dx.doi.org/10.1149/06911.0029ecst.

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Young, C. D., K. Akarvardar, K. Matthews, M. O. Baykan, J. Pater, I. Ok, T. Ngai, et al. "(Invited) Electrical Characterization and Reliability Assessment of Double-Gate FinFETs." ECS Transactions 50, no. 4 (March 15, 2013): 201–6. http://dx.doi.org/10.1149/05004.0201ecst.

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46

Cheng, Y. L., W. Y. Chang, B. J. Wei, F. H. Lu, and Y. L. Wang. "Electrical and Reliability Characterization of Ti/TiN Thin Film Resistor." ECS Transactions 45, no. 6 (April 27, 2012): 81–90. http://dx.doi.org/10.1149/1.3700941.

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47

Tardibuono, Mark J. "Characterization of PCB plated‐through‐hole reliability using statistical analysis." Circuit World 31, no. 1 (March 2005): 8–15. http://dx.doi.org/10.1108/03056120510553176.

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48

Manzini, Stefano, and Mattia Rossetti. "Electrical Characterization and Reliability of Split-Gate High-Voltage Transistors." IEEE Transactions on Device and Materials Reliability 18, no. 2 (June 2018): 279–83. http://dx.doi.org/10.1109/tdmr.2018.2828985.

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49

Kerber, Andreas, Tanya Nigam, Peter Paliwoda, and Fernando Guarin. "Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies." IEEE Transactions on Device and Materials Reliability 20, no. 2 (June 2020): 230–41. http://dx.doi.org/10.1109/tdmr.2020.2981010.

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50

Hong, Sung-Jei, Jong-Woong Kim, and Seung-Boo Jung. "Characterization of Reliability of Printed Indium Tin Oxide Thin Films." Journal of Nanoscience and Nanotechnology 13, no. 11 (November 1, 2013): 7770–73. http://dx.doi.org/10.1166/jnn.2013.7813.

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