Дисертації з теми "Quantum well detector"
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Mahajumi, Abu Syed. "InAs/GaSb quantum well structures of Infrared Detector applications. : Quantum well structure." Thesis, IDE, Microelectronics and Photonics, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-3848.
Повний текст джерелаThe detection of MWIR (mid wavelength infrared radiation) is the important for industrial, biomedical and military applications.desirable for the radiation detector to operate in the middle wavelength IR (MWIR) band corresponding to a wavelength band ranging from about 3 microns to about 5 microns.Such MWIR detectors allow forobjects having a similar thermal signature. In addition, MWIR detectors may be used in low power applications such as in night vision for surveillance of personnel.
Now a day commercially available uncooled IR sensors operating in MWIR region (2 – 5 μm) use microbolometric detectors which are inherently slow. The novel detector of InAs/GaSb quantum well structures overcomes this limitation. However, third-generation high-performance IR FPAs are already an attractive proposition to the IR system designer. They covered such as multicolour (at least two, and maybe more different spectral bands) with the possibility of simultaneous detection in both space and time, and ever larger sizes of, say, 2000 × 2000, and operating at higher temperatures, even to room temperature, for all cut-off wavelengths.These hetero structures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb layer. The effective bandgap of thesestructures can be adjusted from 0.4 eV to values below 0.1 eV by varying the thickness of constituent layers leading to an enormous range of detector cutoff wavelengths (3-20 This work is focused on the various key characteristics the optical (responsivity and detectivity) and electrical (surface leakage & dark current) of infrared detector and proof of concept is demonstrated on infrared P-I-N photodiodes based on InAs/GaSb superlattices with ~8.5 μm cutoff wavelength and bandgap energy ~150 meV operating at 78 K where supression of surface leakage currents is observed. In certain military applications, it isthermal imaging of airplanes, artillery tanks and otherμm).
Nice research work at Halmstad University
Giannopoulos, Mihail. "Tunable bandwidth quantum well infrared photo detector (TB-QWIP)." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Dec%5FGiannopoulos.pdf.
Повний текст джерелаThesis advisor(s): Gamani Karunasiri, James Luscombe. Includes bibliographical references (p. 59-61). Also available online.
Ganbold, Tamiraa. "Development of quantum well structures for multi band photon detection." Doctoral thesis, Università degli studi di Trieste, 2015. http://hdl.handle.net/10077/11801.
Повний текст джерелаLa ricerca qui presentata è incentrata sullo sviluppo di tecnologie innovative per la produzione di rivelatori di posizione di fasci fotonici veloci (pBPM) per applicazioni in luce di sincrotrone (SR) e laser a elettroni liberi (FEL). Nel nostro lavoro abbiamo proposto un rilevatore in-situche ha dimostrato velocità di risposta ed omogeneità sia per scopi di diagnostica che di calibrazione. I dispositivi sono basati su pozzi quantici (QW) dimateriali semiconduttori InGaAs / InAlAs,che offrono diversi vantaggi grazie alla loro gap di banda diretta e a bassa energia, e all’alta mobilità elettronica a temperatura ambiente. I QW metamorfici diIn0.75Ga0.25As/In0.75Al0.25As contenenti un gas di elettroni bidimensionali (2DEG) sono staticresciuti tramite epitassia a faci molecolari (MBE). Tali materiali presentano alcune differenze notevoli rispetto al diamante, che è il materiale utilizzato per i rivelatori commerciali allo stato dell’arte. Innanzitutto, i costi di produzione e di fabbricazione sono molto più bassi. Poi, il coefficiente di assorbimento è molto superiore al diamante su una vasta gamma di energie di raggi X, il che li rende ampiamente complementari in possibili applicazioni. Inoltre, utilizzando semiconduttori composti si possono fabbricare dispositivi con diverse combinazioni di materiali per la barriera ed il QW;ciòha permesso di ridurre la gap di energia fino a 0.6 eV. La disponibilità e la ripetibilità di fabbricazione dei dispositivi è migliore rispetto a quelle del diamante. Quattro configurazioni di dispositivi a QW pixelati sono stati testati con diverse fonti di luce, come radiazione di sincrotrone, tubo a raggi X convenzionali e laser ultra veloce nel vicinoUV. In questa tesi, dopo aver introdotto i dispositivi a QW per utilizzo comepBPM, saranno riportati e discussii risultati più importanti ottenuti. Tali risultati indicano che questi rivelatori rispondono con tempi di 100-ps a impulsi laser ultraveloci, cioè un fattore 6 più velocirispetto a rivelatori a semiconduttori commerciali allo stato dell’arte. La precisione raggiunta nella stima della posizione del fascio fotonico è di 800nm, da confrontare con i 150nm di rivelatori a diamante commerciali. Inoltre, i nostri rivelatori di fotoni a QW lavorano a tensioni molto inferiori rispetto aipBPMs esistenti.Infine, test con raggi X da radiazione di sincrotrone mostrano come questi dispositivi presentano elevate efficienze di raccolta di carica, che possono essere imputabili all'effetto di moltiplicazione di carica del gas di elettroni 2D all'interno del pozzo. Tutti questi vantaggi rispetto ai rivelatori esistenti basati sul diamante, rendono i nostri dispositivi potenzialmente molto attrattivi come alternativa a quelli commerciali.
XXVII Ciclo
1984
Wang, Yuekun. "In0.53Ga0.47As-In0.52Al0.48As multiple quantum well THz photoconductive switches and In0.53Ga0.47As-AlAs asymmetric spacer layer tunnel (ASPAT) diodes for THz electronics." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/in053ga047asin052al048as-multiple-quantum-well-thz-photoconductive-switches-and-in053ga047asalas-asymmetric-spacer-layer-tunnel-aspat-diodes-for-thz-electronics(5fd73bd5-aef3-476b-be1b-7498da3f9627).html.
Повний текст джерелаPsarakis, Eftychios V. "Simulation of performance of quantum well infrared photocetectors." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Jun%5FPsarakis.pdf.
Повний текст джерелаThesis Advisor(s): Gamani Karunasiri, James Luscombe, Robert Hutchins, John Powers. Includes bibliographical references (p. 129-131). Also available online.
Hanson, Nathan A. "Characterization and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Jun%5FHanson.pdf.
Повний текст джерелаThesis Advisor(s): Gamani Karunasiri, James H. Luscombe. "June 2006." Includes bibliographical references (p. 49-50). Also available in print.
Lantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.
Повний текст джерелаXu, Yuanjian Yariv Amnon. "Quantum well intersubband transition detection and modulation /." Diss., Pasadena, Calif. : California Institute of Technology, 1997. http://resolver.caltech.edu/CaltechETD:etd-05112005-153655.
Повний текст джерелаYeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.
Повний текст джерелаKonukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.
Повний текст джерелаHickey, Thomas R. "Temperature dependence of dark current in quantum well infrared detectors." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHickey.pdf.
Повний текст джерелаJiang, Lin. "Investigation of a novel multicolor quantum well infrared photodetector and advanced quantum dot infrared photodetectors." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0001249.
Повний текст джерелаSim, Koon-hung Steven, and 沈觀洪. "Antimonide based quantum-well and its application in infrared photodetector." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31223345.
Повний текст джерелаMemis, Sema. "Ensemble Monte Carlo Modeling Of Quantum Well Infrared Photodetectors." Phd thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/2/12607291/index.pdf.
Повний текст джерела. The results suggest that the gain in the shorter well width device is considerably higher, which is attributed to the much longer lifetime of the photoexcited electrons as a result of lower capture probability (pc) in the device. The effects of the L-QW height on the QWIP characteristics have also been studied by artificially increasing this height from 63 to 95 meV in Al0.3Ga0.7As/GaAs QWIPs. The increase in the L valley (L-QW) height resulted in higher pc and lower gain due to high rate of capturing of these electrons when Gamma and L valley separation is small.
Corbin, Elizabeth Ann. "Infra-red optical properties of SiGe/Si heterostructures." Thesis, University of Newcastle Upon Tyne, 1995. http://hdl.handle.net/10443/810.
Повний текст джерелаTouse, Michael P. "Demonstration of a near and mid-infrared detector using multiple step quantum wells." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03sep%5FTouse.pdf.
Повний текст джерелаHoang, Vu D. "Charge transport study of InGaAs QWIPs /." Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Jun%5FHoang.pdf.
Повний текст джерелаThesis advisor(s): Nancy M. Haegel, John Powers. Includes bibliographical references (p. 53-54). Also available online.
Kaldirim, Melih. "Dual And Single Color Mid-wavelength Infrared Quantum Well Photodetectors." Master's thesis, METU, 2008. http://etd.lib.metu.edu.tr/upload/2/12609900/index.pdf.
Повний текст джерела#61549
m) and mid wavelength infrared (MWIR 3-5 &
#61549
m) bands. This thesis work focuses on the development of large format single and dual color MWIR QWIP FPAs. For single band MWIR detection, we report QWIP FPAs on InP substrate as an alternative to the GaAs based MWIR QWIPs suffering from the degrading effects of lattice mismatched epitaxy. In the course of this work, epitaxial growth conditions of the device structure were optimized and 640×
512 AlInAs/InGaAs QWIP FPAs on InP substrate have been fabricated yielding NETD of 22 mK (f/1.5) and background limited performance (BLIP) temperature as high as 115 K In the second part, we report the first voltage tunable 640×
512 dual color MWIR QWIP FPA. After optimizing epitaxial growth of AlGaAs/InGaAs material system, we have designed and implemented the device structure to yield voltage tunable spectral response in two different windows in the MWIR band. The FPA provides NETDs of 60 and 30 mK (f/1.5) in colors 1 and 2. The results are very encouraging for the development of low cost dual/multi color FPAs since our approach utilizes one In bump per pixel allowing fabrication of dual color FPAs with the same process steps for single color FPAs.
Tomlinson, Andrew Michael. "Terahertz detection and electric field domains in multiple quantum wells." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302363.
Повний текст джерелаChaisakul, Papichaya. "Ge/SiGe quantum well devices for light modulation, detection, and emission." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00764154.
Повний текст джерелаKarkhanehchi, Mohammad Mehdi. "Generation and detection of short optical pulses using semiconductor devices." Thesis, University of Glasgow, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360165.
Повний текст джерелаWong, Alan Lip Yau. "Study of Inâ‚â†-â†xâ†-â†yGaâ†xAlâ†yAs multiple quantum well infrared photodetectors grown on GaAs substrates." Thesis, University of Hull, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273817.
Повний текст джерелаBigioli, Azzurra. "Performance evaluation of a quantum-well infrared photodetector in patch-antenna architecture." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/13438/.
Повний текст джерелаDavies, Graeme John. "Optically detected X-ray absorption spectroscopy (OD-XAS) study of InGaN/GaN quantum well and quantum dot nanostructures." Thesis, University of Manchester, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.516410.
Повний текст джерелаGrave, Ilan Yariv Amnon Yariv Amnon. "GaAs quantum well devices for detection and nonlinear optics in the mid-infrared /." Diss., Pasadena, Calif. : California Institute of Technology, 1993. http://resolver.caltech.edu/CaltechETD:etd-08272007-111424.
Повний текст джерелаAlves, Fábio Durante Pereira. "Three-band quantum well infrared photodetector using interband and intersubband transitions." Instituto Tecnológico de Aeronáutica, 2008. http://www.bd.bibl.ita.br/tde_busca/arquivo.php?codArquivo=523.
Повний текст джерелаGerbracht, Michael [Verfasser]. "Optically detected resonances induced by far infrared radiation in quantum wells and quantum dots / Michael Gerbracht." München : GRIN Verlag, 2008. http://d-nb.info/997515562/34.
Повний текст джерелаKaushik, Sumanth. "Design and application of a soft X-ray detector using GaAs multiple quantum wells." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/37719.
Повний текст джерелаIncludes bibliographical references (leaves 156-163).
by Sumanth Kaushik.
Ph.D.
Aslan, Bulent. "Physics And Technology Of The Infrared Detection Systems Based On Heterojunctions." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12604801/index.pdf.
Повний текст джерелаHoang, Vu Dinh. "Charge transport study of InGaAs two-color QWIPs." Thesis, Monterey California. Naval Postgraduate School, 2004. http://hdl.handle.net/10945/1574.
Повний текст джерелаIn this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements.
Civilian, Department of Air Force
Flinn, Gregory Patrick. "Laser spectroscopy of semiconductor quantum wells : optical pumping and optically detected nuclear magnetic resonance." Thesis, University of Southampton, 1991. https://eprints.soton.ac.uk/399448/.
Повний текст джерелаPalaferri, Danièle. "Antenna resonators for quantum infrared detectors and fast heterodyne receivers." Thesis, Sorbonne Paris Cité, 2018. http://www.theses.fr/2018USPCC083/document.
Повний текст джерелаThe present thesis manuscript is about the conception and the realisation of metastructures for the improvement of detector performances in the mid-infrared and terahertz (THz) spectral ranges. These meta-structures are arrays of metal resonators that also act as antennas, allowing a better collection of photons and a stronger confinement of the electric field. In this manuscript, I examine the experimental results regarding a 55.5 µm (5.4 THz) and a 8.6 µm quantum well infrared photodetectors (QWIP), implemented into patch-antennae arrays. The responsivity, the specific detectivity and the thermal performances of the antenna-coupled devices are systematically compared to the same detector processed in standard substrate-coupled ‘mesa’ geometry. In the mid-infrared, the room temperature operation using a thermal radiation source is reported for the first time. Moreover, exploiting the short carrier lifetime in semiconductor quantum wells, a room temperature heterodyne detection is demonstrated, at frequencies up to few GHz, limited only by the cut-off frequency of the external circuit. In the last part of this work, several perspectives are discussed, regarding alternative quantum detector structures coupled to the patch resonators geometry and innovative circuit-like plasmonic architectures, envisioning orders of magnitude improvement in photodetector performances
Ariyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.
Повний текст джерелаOzer, Selcuk. "Insb And Inassb Infrared Photodiodes On Alternative Substrates And Inp/ingaas Quantum Well Infrared Photodetectors: Pixel And Focal Plane Array Performance." Phd thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606097/index.pdf.
Повний текст джерела1010 and 7.5×
108 cmHz½
/W at 77 K and 240 K, respectively, showing that the alloy is promising for both cooled and near room temperature detectors. Under moderate reverse bias, 80 K RoA product limiting mechanism is trap assisted tunneling, which introduces considerable 1/f noise. InSb/Si photodiodes display peak 77 K detectivity as high as ~1×
1010 cmHz 1/2/W and reasonably high peak quantum efficiency in spite of large lattice mismatch. RoA product of detectors at 80 K is limited by Ohmic leakage with small activation energy (25 meV). Bias and temperature dependence of 1/f noise is in reasonable agreement with Kleinpenning&rsquo
s mobility fluctuation model, confirming the validity of this approach. The second part of the study concentrates on InP/In0.53Ga0.47As QWIPs, and 640×
512 FPA, which to our knowledge, is the largest format InP/InGaAs QWIP FPA reported. InP/InGaAs QWIPs yield quantum efficiency-gain product as high as 0.46 under moderate bias. At 70 K, detector performance is background limited with f/2 aperture up to ~3 V bias where peak responsivity (2.9 A/W) is thirty times higher than that of the Al0.275Ga0.725As/GaAs QWIP with similar spectral response. Impact ionization in InP/InGaAs QWIPs does not start until the average electric-field reaches 25 kV/cm, maintaining high detectivity under moderate bias. The 640×
512 InP/InGaAs QWIP FPA yields noise equivalent temperature difference of ~40 mK at an FPA temperature as high as 77 K and reasonably low NETD even with short integration times (t). 70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under &ndash
0.5 V (t=11 ms) and &ndash
2 V (t=650 Rs) bias, respectively. The results clearly show the potential of InP/InGaAs QWIPs for thermal imaging applications requiring short integration times. Keywords: Cooled infrared detectors, InAsSb, QWIP, focal plane array.
Thomas, Mikkel Andrey. "Integrated optical interferometric sensors on silicon and silicon cmos." Diss., Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26674.
Повний текст джерелаUllah, Saeed. "Optical control and detection of spin coherence in multilayer systems." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10052017-163058/.
Повний текст джерелаHá uma década, a spintrônica e outras áreas relacionadas vêm atraindo considerável atenção, devido a enorme quantidade de pesquisa conduzidas por elas. A principal razão para o crescente interesse neste campo é a expectativa da aplicação do controle do spin do elétron no lugar ou em adição à carga, em dispositivos eletrônicos e informação e computação quânticas. A possibilidade destes spins carregarem informação depende, primeiramente, da habilidade de controlá-los coerentemente, em uma escala de tempo muito mais rápida do que o tempo de decoerência. Esta tese trata da dinâmica de spins em gases de elétrons bidimensionais, em poços quânticos de semicondutores III-V, crescidos artificialmente. Nós apresentamos uma série de experimentos, utilizando técnicas para o controle ótico da polarização de spin, desencadeadas por métodos óticos ou eletrônicos, ou seja, técnicas conhecidas de bombeio e prova e polarização de spin induzida por corrente. Nós investigamos a coerência de spin em gases bidimensionais, confinados em poços quânticos duplos e triplos de GaAs/AlGaAs e a dependência da defasagem com parâmetros experimentais, como campo magnético externo, potência ótica, tempo entre os pulsos de bombeio e prova e comprimento de onda da excitação. Também estudamos a grande anisotropia de relaxação de spin como função da temperatura da amostra, potência de excitação e defasagem entre bombeio e prova, medidos para uma vasta gama de temperatura, entre 5K e 250K, usando Rotação de Kerr com Resolução Temporal (TRKR) e Amplificação Ressonante de Spin (RSA). Além disso estudamos a influência da concentração de Al na dinâmica dos poços de AlGaAs/AlAs, para o qual a engenharia da composição da estrutura permite sintonizar o tempo de defasagem de spin e o fator $ g $ do elétron. Por fim, estudamos a deriva transversal macroscópica da longa coerência de spin induzida por corrente, através de medidas de Rotação de Kerr não-locais, baseadas na amplificação ressonante ótica da polarização eletricamente induzida. Observamos uma variação espacial significante do fator $ g $ e do tempo de vida da coerência, na escala de nanosegundos, deslocada distâncias de meio milímetro na direção transversa ao campo magnético aplicado.
Venter, Johan H. "Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology." Diss., University of Pretoria, 2013. http://hdl.handle.net/2263/25267.
Повний текст джерелаDissertation (MEng)--University of Pretoria, 2013.
Electrical, Electronic and Computer Engineering
unrestricted
Machhadani, Houssaine. "Transitions intersousbandes dans les puits quantiques GaN/AlN du proche infrarouge au THz." Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00591962.
Повний текст джерелаKolahdouz, Esfahani Mohammadreza. "Application of SiGe(C) in high performance MOSFETs and infrared detectors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32049.
Повний текст джерелаQC 20110405
Jollivet, Arnaud. "Dispositifs infrarouges à cascade quantique à base de semiconducteurs GaN/AlGaN et ZnO/ZnMgO." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS058/document.
Повний текст джерелаThis manuscript focuses on the study and on the development of semiconductor heterostructures based on GaN and ZnO material. These materials are particularly promising for the development of infrared optoelectronic intersubband devices in particular for quantum cascade devices. These semiconductors own several advantages to design quantum cascade devices such as a large conduction band offset and a large energy of the LO phonon. These properties predict the possibility to develop devices covering a large spectral range from near-infrared to terahertz and offer the possibility to realize terahertz quantum cascade lasers operating at room temperature
Chen, Lungway, and 陳龍威. "Image Evaluation and Analysis for AlInGaAs Quantum Well Detector." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/76402381169747708664.
Повний текст джерела國防大學理工學院
電子工程碩士班
101
In this thesis, the use of warm images of 320 × 256 variable measurement system FPA thermal imaging test and the physical properties of commonly used performance parameters description and laboratory measurements, including parameters such as SiTF, NETD, Uniformity, Operability, and addition, respectively, on eachdifferent band FPA parameters to adjust and optimize the image.Package before and after the test is also infrared focal plane arrays will be compared and the dead pixel compensation using MATLAB software image, making it more uniform screen. Can only be seen in the medium-wavelength image correction before the portrait unclear, good images can be obtained after correction of non-uniformity compensation and and its NEDT value of approximately 72mk Operability approximately 97%, Non-Uniformity of approximately 4%; however quantum wells advantage of it for long wavelength, so the development of a more mature, of its NEDT value of approximately 40mk Operability approximately 99%, Non-Uniformity of about 0.1%, and achieve the expected performance of the package after the image, can not only near-distance character imaging, and can be observed fine hair, Eye Movement and arm, blood vessels and other subtle temperature difference can be clearly ruled that, while the distant scene and high flying targets.
Xu, Yuanjian. "Quantum well intersubband transition detection and modulation." Thesis, 1997. https://thesis.library.caltech.edu/1723/2/Xu_y_1997.pdf.
Повний текст джерелаBalakrishnam, Raju J. "Design, Fabrication And Characterization Of Corrugated-Quantum Well Infrared Photodetector." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1426.
Повний текст джерелаDeng, Shao You, and 鄧紹猷. "The Fabrication and Measurement of Muti-Quantum Well Infrared Detectors." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/44678454987787191253.
Повний текст джерелаLAI, Ming-Chih, and 賴銘智. "Optimized Design of The Dual-band Quantum Well Infrared Detectors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/84822993228291402826.
Повний текст джерела國防大學理工學院
光電工程碩士班
99
In this thesis, vertically stacked structure pixels combined with interlacemode achieves dual-band quantum well infrared detector elements, where it improvesthe shortcomings existing pixels on the process design, mask and components in the production of long-wavelength grating , the mask paste with the components and the gap between high and low when the shortcomings of this study, it improves the shortcomings of hight differences between mid- and long wavelength QWIP structure rusuiting in focusing on optical grating when the interlaced QWIPs are fabriouted. The study uses metal covered with the edge of Mid-wavelength QWIP to achieve the same height of dual-band QWIP, output Dual-band response and decrease device darkcurrent from surface and edge of QWIP. By proposed revised process.We improve the performance of interlanced dual-band QWIP. Where,it results in eages-undercuting and higher darkcurrent in our laboratory last year. Because the normal incident TE mode infrared light can not be adsorbed, the two-dimensioual optical grating must be used to deflect the incident light. The research is proposed a better parameters of two-dimensioual optical grating to apply the interlaced dual-band QWIPs. Using Comsol Multi-physics 3.5a simulator (fimite element method) combined with Schrodinger wave-equation, band-gap engineering in strained effect to optimize the period numbers, Al and In mole ratio of quantum well, QWIP stracture will be proposed efficiently and quickly.
Jolley, Gregory. "Growth and analysis of quantum dots-in-a-well infrared photodetectors." Phd thesis, 2009. http://hdl.handle.net/1885/148261.
Повний текст джерела"Control of transverse optical patterns in semiconductor quantum well microcavities." 2012. http://library.cuhk.edu.hk/record=b5549072.
Повний текст джерела這篇論文以微觀多體理論研究被激光正向入射的半導體量子阱微腔系統中產生的自發性橫向光學圖案。入射光會在一定條件下於半導體量子阱微腔中發生極化子場之間的自發四波混頻,並產生橫向光學圖案。我們分別以半分析和數值模擬的方法研究這些圖案的形成和選擇方式。本論文亦研究了如何用離軸激光和腔的各向異性來控制這些圖案。
我們分別用「多-
Processing information all-optically is thought to be one way to improve the performance of present-day computational network. Low intensity all-optical switches are desirable for effective all-optical information processing. Recently, low intensity all-optical switching schemes utilizing transverse optical patterns have been proposed. One such scheme was successfully demonstrated experimentally in an atomic vapour system, and a similar scheme is being studied both theoretically and experimentally in semiconductor quantum well micro-cavities.
In this thesis, we present our theoretical studies on the spontaneous transverse optical patterns produced by a semiconductor quantum well microcavity, pumped by a normally incident laser, using a microscopic many-body theory. Far field transverse optical patterns are formed under certain conditions by spontaneous four-wave mixing of the exciton-photon polariton field. The formation and the selection of these patterns are studied by both semi-analytical calculations and numerical simulations. The controls of transverse patterns using anisotropy in the microcavity and an o-axis control beam are also being studied in this thesis.
Two reduced models, the ‘multi-
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Luk, Ming Ho = 對半導體量子阱微腔中橫向光學圖案的控制 / 陸名浩.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2012.
Includes bibliographical references (leaves 136-141).
Abstracts also in Chinese.
Luk, Ming Ho = Dui ban dao ti liang zi jing wei qiang zhong heng xiang guang xue tu an de kong zhi / Lu Minghao.
Chapter 1 --- Introduction --- p.1
Chapter 1.1 --- Pattern formation and nonlinear optics --- p.5
Chapter 1.2 --- All-optical switching --- p.8
Chapter 1.3 --- Semiconductor quantum well microcavity --- p.9
Chapter 2 --- Semiconductor quantum well microcavity --- p.13
Chapter 2.1 --- The structure of semiconductor quantum well microcavity --- p.14
Chapter 2.2 --- Coupling between the cavity mode and external fields --- p.18
Chapter 2.3 --- Microscopic theory in the microcavity --- p.22
Chapter 3 --- Linear stability analysis and reduced models --- p.32
Chapter 3.1 --- Pump only system - steady state solution --- p.32
Chapter 3.2 --- Pump only system - stability analysis --- p.37
Chapter 3.3 --- Off-axis stability studies --- p.39
Chapter 3.3.1 --- Stability analysis without phase-space filling --- p.40
Chapter 3.3.2 --- Linear stability analysis with phase-space filling --- p.54
Chapter 3.4 --- Reduced models --- p.59
Chapter 3.4.1 --- The multi- --- p.63
Chapter 3.4.2 --- The ring model --- p.68
Chapter 3.5 --- Effects of system parameters --- p.71
Chapter 3.5.1 --- Radiative loss --- p.72
Chapter 3.5.2 --- Incident laser field/intensity --- p.73
Chapter 3.5.3 --- Fluctuations/weak constant sources --- p.78
Chapter 4 --- Single-hexagon model --- p.82
Chapter 4.1 --- Numerical results of single-hexagon model --- p.82
Chapter 4.2 --- Pattern and time scale variations with parameters --- p.86
Chapter 4.2.1 --- Anisotropy in the cavity mode energy --- p.87
Chapter 4.2.2 --- Control beam intensity --- p.90
Chapter 5 --- Dynamical analysis and interplay of wave-mixing processes --- p.93
Chapter 5.1 --- Dynamical analysis --- p.93
Chapter 5.2 --- Interplay of wave mixing processes --- p.99
Chapter 5.3 --- Switching between hexagons --- p.103
Chapter 6 --- Full two-dimensional simulation --- p.111
Chapter 6.1 --- Convolution theorem and Fast Fourier Transform --- p.112
Chapter 6.2 --- Simulation result and difficulties --- p.114
Chapter 7 --- Other approaches --- p.119
Chapter 7.1 --- Real Space Simulation --- p.119
Chapter 7.2 --- Mode competition model --- p.121
Chapter 7.3 --- Transfer Matrix --- p.123
Chapter 8 --- Conclusion and outlook --- p.125
Chapter 8.1 --- Future work --- p.128
Chapter 8.1.1 --- Double Cavities --- p.128
Chapter 8.1.2 --- The Gross-Pitaevskii Equation and Bose-Einstein Condensation --- p.131
Bibliography --- p.136
Chapter A --- Dispersion of cavity photon --- p.142
En-Chih, Liu, and 劉恩池. "Investigations for the Dual-band Quantum Well Infrared Detectors Optimized under Process Condition." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/47779841567459400940.
Повний текст джерела國防大學理工學院
電子工程碩士班
100
The dissertation is to realize dual-band quantum well infrared detector elements by using stair structure to stack and interlace with pixels, further to improve the mid-wave structure of metalshort circuit during the interlace mode device process of current pixels. Due to the serious undercut, it has caused metal shutdown and could not to produce the long-wave photo response. The research is proposed to expose more metal short circuit mid - wave by stacking the stair structure, therefore successfully produces dual-band mid and long wave photo responses and increase photo responses and decrease dark current of devices. The research has improved and modified the previous dual band manufacturing process - the previous process had a low yield rate of lithography because it used different pictures during dual-band mid and long wave grating manufacturing process, which had led to a incomplete grating structure, therefore resulted in the degradation of dual band quantum well infrared detector . Because quantum well infrared detector elements can not absorb coupling positively reflecting Transverse Electric light, it is necessary to produce two-dimensioual optical grating on the devices. The research has obtained better two-dimension optical grating parameters and has successfully applied in the interlaced dual-band quantum well infrared detector elements.
HUANG, YI-MIN, and 黃益民. "The design of tunable coupled quantum wells far-infrared detectors." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/41460239391614177704.
Повний текст джерелаLin, lian jium, and 李廉鈞. "Experiment emphasizes on the optimized design of the dual-band quantum well infrared detectors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/55381961465161507164.
Повний текст джерела國防大學理工學院
電子工程碩士班
98
This experiment emphasizes on the optimized design of the dual-band quantum well infrared detectors.At first,required to achieve the better performance of to the single-band quantum well infrared detectors, based on optical and electrical properties analyzed optimization research to facilitate more effective coupling incident light from two-dimensional grating, as well as adjusting the position of potential energy wells, and carrier doping densities to improve the background of long-wavelength limit temperature, and other aspects. For single-band quantum well, the design dual-band quantum well after optimazing and the scheme of and process mask, the better design of wavelength absorption in the 4.7 μm and 8.4 μm, with the ranks of the exchange of detector is proposed. With the synchronous output is achieved under the middle and long-wavelength of and dual-band quantum well infrared detector, operating at 60 K, and a bias of -3.2 V.The dual-band response of the middle responsivity are 0.27 A/W and long wavelength responsivity are 0.39 A/ W.