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Статті в журналах з теми "Quantum oscillation in insulator"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

Оновлено: 7 вересня 2023

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1

Xiang, Z., Y. Kasahara, T. Asaba, B. Lawson, C. Tinsman, Lu Chen, K. Sugimoto, et al. "Quantum oscillations of electrical resistivity in an insulator." Science 362, no. 6410 (August 30, 2018): 65–69. http://dx.doi.org/10.1126/science.aap9607.

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In metals, orbital motions of conduction electrons on the Fermi surface are quantized in magnetic fields, which is manifested by quantum oscillations in electrical resistivity. This Landau quantization is generally absent in insulators. Here, we report a notable exception in an insulator—ytterbium dodecaboride (YbB12). The resistivity of YbB12, which is of a much larger magnitude than the resistivity in metals, exhibits distinct quantum oscillations. These unconventional oscillations arise from the insulating bulk, even though the temperature dependence of the oscillation amplitude follows the conventional Fermi liquid theory of metals with a large effective mass. Quantum oscillations in the magnetic torque are also observed, albeit with a lighter effective mass.

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2

Sebastian, Suchitra E., Neil Harrison, and Gilbert G. Lonzarich. "Quantum oscillations in the high- T c cuprates." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1941 (April 28, 2011): 1687–711. http://dx.doi.org/10.1098/rsta.2010.0243.

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We review recent progress in the study of quantum oscillations as a tool for uniquely probing low-energy electronic excitations in high- T c cuprate superconductors. Quantum oscillations in the underdoped cuprates reveal that a close correspondence with Landau Fermi-liquid behaviour persists in the accessed regions of the phase diagram, where small pockets are observed. Quantum oscillation results are viewed in the context of momentum-resolved probes such as photoemission, and evidence examined from complementary experiments for potential explanations for the transformation from a large Fermi surface into small sections. Indications from quantum oscillation measurements of a low-energy Fermi surface instability at low dopings under the superconducting dome at the metal–insulator transition are reviewed, and potential implications for enhanced superconducting temperatures are discussed.

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3

Lu, Xin. "Magnetic quantum oscillation in a monolayer insulator." Journal of Semiconductors 42, no. 6 (June 1, 2021): 060401. http://dx.doi.org/10.1088/1674-4926/42/6/060401.

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4

Yang, Chao, Yi Liu, Yang Wang, Liu Feng, Qianmei He, Jian Sun, Yue Tang, et al. "Intermediate bosonic metallic state in the superconductor-insulator transition." Science 366, no. 6472 (November 14, 2019): 1505–9. http://dx.doi.org/10.1126/science.aax5798.

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Whether a metallic ground state exists in a two-dimensional system beyond Anderson localization remains an unresolved question. We studied how quantum phase coherence evolves across superconductor–metal–insulator transitions through magnetoconductance quantum oscillations in nanopatterned high-temperature superconducting films. We tuned the degree of phase coherence by varying the etching time of our films. Between the superconducting and insulating regimes, we detected a robust intervening anomalous metallic state characterized by saturating resistance and oscillation amplitude at low temperatures. Our measurements suggest that the anomalous metallic state is bosonic and that the saturation of phase coherence plays a prominent role in its formation.

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5

Ong, N. P. "Quantum oscillations in an insulator." Science 362, no. 6410 (October 4, 2018): 32–33. http://dx.doi.org/10.1126/science.aau3840.

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6

Nicolaeva, A. A., L. A. Conopco, I. A. Popov, G. I. Para, O. V. Botnari та T. E. Huber. "Квантовый размерный эффект и осцилляции Шубникова–де Гааза в поперечном магнитном поле в полупроводниковых нитях Bi0,92Sb0,08". Elektronnaya Obrabotka Materialov 57, № 6 (грудень 2021): 79–86. http://dx.doi.org/10.52577/eom.2021.57.6.79.

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Анотація:

The transport properties, magnetoresistance, and Shubnikov–de Haas (SdH) oscillations of glass-coated Bi0.92Sb0.08 single-crystal wires with diameters of 180 nm to 2.2 mm and the (1011) orientation along the wire axis, which are prepared by liquid phase casting, have been studied. For the first time, it has been found that the energy gap DE increases by a factor of 4 with a decrease in the wire diameter d owing to the manifestation of the quantum size effect. This significant increase in the energy gap can occur under conditions of an energy–momentum linear dispersion relation, which is characteristic of both the gapless state and the surface states of a topological insulator. It has been shown that, in a strong magnetic field at low temperatures, a semiconductor–semimetal transition occurs; it is evident in the temperature dependences of resistance in a magnetic field. An analysis of the SdH oscillations, namely, the phase shift of the Landau levels and the features of the angular dependences of the oscillation periods, suggests that the combination of the manifestation of the topological insulator properties and the quantum size effect leads to the occurrence of new effects in low-dimensional structures, which requires new scientific approaches and applications in microelectronics

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7

ZHANG, SHENG-NAN, HUA JIANG, and HAIWEN LIU. "NUMERICAL STUDY OF TRANSPORT PROPERTIES IN TOPOLOGICAL INSULATOR QUANTUM DOTS UNDER MAGNETIC FIELD." Modern Physics Letters B 27, no. 14 (May 16, 2013): 1350104. http://dx.doi.org/10.1142/s0217984913501042.

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In this paper, we investigate the transport properties of HgTe / CdTe -based topological insulator quantum dots (TIQDs) under magnetic field. Both disk and square shaped TIQDs are considered and the magneto-conductance are calculated numerically for various magnetic field strength. The magnetic field lifts the spin degeneracy, leading to spin polarized current at given Fermi energy. Meanwhile, the magneto-conductance demonstrates the Aharonov–Bohm (AB) oscillation with a period of one flux quantum [Formula: see text]. Numerical results for AB oscillation features indicate the mismatch between electron (e) and hole (h) doping conditions, which can be attributed to the e–h asymmetry in the full band Hamiltonian. Further, interference effect emerges around bulk and edge energy degenerate points, subsequently suppressing the magneto-conductance in both shaped systems. All these physical characteristics are qualitatively consistent for disk and square shaped TIQDs due to the topological nature of edge modes.

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8

Zhang, T., G. Li, S. C. Sun, N. Qin, L. Kang, S. H. Yao, H. M. Weng, et al. "Electronic structure of correlated topological insulator candidate YbB6 studied by photoemission and quantum oscillation." Chinese Physics B 29, no. 1 (January 2020): 017304. http://dx.doi.org/10.1088/1674-1056/ab6206.

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9

Kholod, A. N., V. E. Borisenko, A. Zaslavsky, and F. Arnaud d’Avitaya. "Current oscillations in semiconductor-insulator multiple quantum wells." Physical Review B 60, no. 23 (December 15, 1999): 15975–79. http://dx.doi.org/10.1103/physrevb.60.15975.

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10

Ramazashvili, R., F. Bègue, and P. Pujol. "Diagnosing a strong topological insulator by quantum oscillations." Journal of Physics: Conference Series 592 (March 18, 2015): 012127. http://dx.doi.org/10.1088/1742-6596/592/1/012127.

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11

Konopko, Leonid, Albina Nikolaeva, Tito E. Huber, and Krzysztof Rogacki. "Quantum oscillations in nanowires of topological insulator Bi0.83Sb0.17." Applied Surface Science 526 (October 2020): 146750. http://dx.doi.org/10.1016/j.apsusc.2020.146750.

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12

Rashidi, Arman, Robert Kealhofer, Alexander C. Lygo, and Susanne Stemmer. "Universal conductance fluctuations in nanoscale topological insulator devices." Applied Physics Letters 122, no. 5 (January 30, 2023): 053101. http://dx.doi.org/10.1063/5.0136020.

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Topological materials are promising candidates in fault-tolerant quantum information processing architectures, making it essential to understand the dephasing mechanisms in these materials. Here, we investigate gated, nanoscale mesas fabricated on thin films of cadmium arsenide (Cd3As2), a three-dimensional Dirac semimetal that can be tuned into different topological phases. We observe two independent types of conductance oscillations, one as a function of the applied magnetic field and the other as a function of the gate voltage. Varying the dimensions of the nanostructures allows the discrimination of a variety of scenarios for similar oscillations previously reported in the literature. We conclude that the conductance oscillations are not a signature of topological boundary states per se, but rather are universal conductance fluctuations. These results broadly inform future interpretations of electronic quantum interference in mesoscopic devices made from topological materials.

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13

Luo, Kun, Wei Chen, Li Sheng, and D. Y. Xing. "Random-Gate-Voltage Induced Al’tshuler–Aronov–Spivak Effect in Topological Edge States." Chinese Physics Letters 38, no. 11 (December 1, 2021): 110302. http://dx.doi.org/10.1088/0256-307x/38/11/110302.

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Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between the topologically trivial and nontrivial phases. Here, we show that helical edge states can be identified by the random-gate-voltage induced Φ 0/2-period oscillation of the averaged electron return probability in the interferometer constructed by the edge states. The random gate voltage can highlight the Φ 0/2-period Al’tshuler–Aronov–Spivak oscillation proportional to sin2(2πΦ/Φ 0) by quenching theΦ 0-period Aharonov–Bohm oscillation. It is found that the helical spin texture induced π Berry phase is key to such weak antilocalization behavior with zero return probability at Φ = 0. In contrast, the oscillation for the trivial edge states may exhibit either weak localization or antilocalization depending on the strength of the spin-orbit coupling, which has finite return probability at Φ = 0. Our results provide an effective way for the identification of the helical edge states. The predicted signature is stabilized by the time-reversal symmetry so that it is robust against disorder and does not require any fine adjustment of system.

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14

Ryzhkov, M. S., D. A. Kozlov, D. A. Khudaiberdiev, Z. D. Kvon, and N. N. Mikhailov. "Interference Transport in a Two-Dimensional Topological Insulator in a CdHgTe Quantum Well." JETP Letters 117, no. 1 (January 2023): 44–47. http://dx.doi.org/10.1134/s0021364022602731.

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Анотація:

Interference transport in mesoscopic samples of a two-dimensional topological insulator in CdHgTe quantum wells is studied for the first time. It is established that quasi-ballistic edge transport in such an insulator exists at lengths up to 10 µm. In this transport regime, almost periodic Aharonov–Bohm oscillations caused by the formation of closed loops with a characteristic size of about 200 nm by edge states are found. The phase coherence length in the two-dimensional topological insulator is determined for the first time from the measured temperature dependence of their amplitude.

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15

Dubovskii, L. B. "The surface tension at the metal-insulator phase transition in the magnetic field." Journal of Physics: Conference Series 2164, no. 1 (March 1, 2022): 012070. http://dx.doi.org/10.1088/1742-6596/2164/1/012070.

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Abstract Any metal-insulator transition in a crystalline matter must be the transition from a situation in which the electronic bands overlap to that when they do not [1]. On the basis of the phenomenological theory [2], various singularities are considered in the magnetic field for the surface tension at the metal-insulator contact. The surface tension displays also the quantum magnetic oscillations at low temperatures [3]. The consideration is applied to the Mott insulator in the magnetic field.

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16

Wang, Yadong, Daniel Burt, Kunze Lu, and Donguk Nam. "Second-harmonic generation in germanium-on-insulator from visible to telecom wavelengths." Applied Physics Letters 120, no. 24 (June 13, 2022): 242105. http://dx.doi.org/10.1063/5.0095666.

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The second-order [Formula: see text] process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the [Formula: see text] process manifests itself only in a non-centrosymmetric dielectric medium via an anharmonic electron oscillation when driven by an intense optical field. Due to inversion symmetry, group-IV semiconductors, such as silicon (Si) and germanium (Ge), are traditionally not considered as ideal candidates for second-order nonlinear optics applications. Here, we report the experimental observation of the second-harmonic generation (SHG) in a Ge-on-insulator (GOI) sample under femtosecond optical pumping. We especially, report the measurement of the SHG signal from a GOI sample in the telecom S-band by pumping at [Formula: see text] nm.

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17

Zhai, Gan, Yizhou Xin, Cameron J. Kopas, Ella Lachman, Mark Field, Josh Y. Mutus, Katarina Cicak, José Aumentado, Zuhawn Sung, and W. P. Halperin. "Contactless excitation of acoustic resonance in insulating wafers." Applied Physics Letters 121, no. 14 (October 3, 2022): 142201. http://dx.doi.org/10.1063/5.0116478.

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Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for the fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results.

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18

Nikolaeva, Albina A., Leonid A. Konopko, Tito E. Huber, Ivan A. Popov, and Gheorghe Para. "Electron transport, transverse and longitudinal magnetoresistance, and Shubnikov–de Haas oscillations in Bi0.83Sb0.17 topological insulator semiconductor wires." Moldavian Journal of the Physical Sciences 21, no. 1 (December 2022): 52–60. http://dx.doi.org/10.53081/mjps.2022.21-1.05https://mjps.nanotech.md/archive/2022/article/202208.

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Анотація:

The paper describes results of experimental studies of the dependence of the resistance, transverse and longitudinal magnetoresistance, as well as the Shubnikov–de Haas (SdH) oscillations of Bi0.83Sb0.17 semiconductor single-crystal wires with diameters of (75–1100) nm, as a function of the thickness, in a temperature range of (3.1–300) K at magnetic fields of up to 14 T. The wires were prepared by liquid-phase casting. It has been found that the temperature dependences of the resistance of wires with d < 0.5 m have two regions exhibiting a semiconductor and a metallic behavior of the resistance, the two regions being separated by a maximum, which is shifted to the high-temperature region with a decrease in the wire diameter d. It has been revealed that the energy gap E increases by a factor of 2 with a decrease in wire diameter d, due to the occurrence of the quantum size effect. The “metallic” behavior of conductivity is attributed to surface states characteristic of topological insulators, which is most clearly evident in thin wires at temperatures of T < 50 K. It has been shown that, in the presence of a uniform magnetic field H, the field dependences of the longitudinal and transverse magnetoresistance in quasi-one-dimensional systems can undergo a significant change depending on the ratio of quantum wire radius to the magnetic length R = (ch/eH)1/2, as well as on the decrease in the mean free path of carriers due to scattering on the wire surface. The SdH oscillation periods exhibit anomalies that are typical neither to bulk Bi1xSbx samples nor to semimetallic wires based on Bi1xSbx alloys. This fact points to the essential role of surface states of topological insulators in 1D-systems, which lead to the occurrence of new effects that are not characteristic of other systems.

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19

Sun, Xiaopei, Bing Li, Enna Zhuo, Zhaozheng Lyu, Zhongqing Ji, Jie Fan, Xiaohui Song, et al. "Realization of superconducting transmon qubits based on topological insulator nanowires." Applied Physics Letters 122, no. 15 (April 10, 2023): 154001. http://dx.doi.org/10.1063/5.0140079.

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Topological-material-based Josephson junctions have the potential to be used to host Majorana zero modes and to construct topological qubits. For operating the topological qubits at an appropriate timescale to avoid decoherence and quasiparticle poisoning, one would eventually go to the time domain and embed the topological qubits into quantum electrodynamic circuits. Here, we constructed a topological-insulator-nanowire-based transmon qubit and demonstrated its strong coupling to a coplanar waveguide resonator. The flux-tunable spectrum and Rabi oscillations with a qubit lifetime [Formula: see text] of [Formula: see text] were observed. Such a hybrid platform, containing topological materials and quantum electrodynamic circuits, can further be used to study the physical properties such as Majorana zero modes in topological quantum circuits.

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20

Minkov, G. M., O. E. Rut, A. A. Sherstobitov, S. A. Dvoretsky, N. N. Mikhailov, and V. Ya Aleshkin. "Energy Spectrum of the Valence Band in HgTe Quantum Wells on the Way from a Two- to Three-Dimensional Topological Insulator." JETP Letters 117, no. 12 (June 2023): 916–22. http://dx.doi.org/10.1134/s0021364023601240.

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The magnetic field and temperature dependences of longitudinal magnetoresistance and the Hall effect have been measured in order to determine the energy spectrum of the valence band in HgTe quantum wells with the width dQW = 20–200 nm. The comparison of hole densities determined from the period of Shubnikov–de Haas oscillations and the Hall effect shows that states at the top of the valence band are doubly degenerate in the entire dQW range, and the cyclotron mass $${{m}_{h}}$$ determined from the temperature dependence of the amplitude of Shubnikov–de Haas oscillation increases monotonically from $$0.2{{m}_{0}}$$ to $$0.3{{m}_{0}}$$ ($${{m}_{0}}$$ is the mass of the free electron) with increasing hole density $$p$$ from $$2 \times {{10}^{{11}}}$$ to $$6 \times {{10}^{{11}}}$$ cm–2. The determined dependence has been compared to theoretical dependences $${{m}_{h}}(p,{{d}_{{{\text{QW}}}}})$$ calculated within the four-band kP model. These calculations predict an approximate stepwise increase in $${{m}_{h}}$$ owing to the pairwise merging of side extrema with increasing hole density, which should be observed at $$p = (4{-} 4.5) \times {{10}^{{11}}}$$ and 4 × 1010 cm–2 for dQW = 20 and 200 nm, respectively. The experimental dependences are strongly inconsistent with this prediction. It has been shown that the inclusion of additional factors (electric field in the quantum well, strain) does not remove the contradiction between the experiment and theory. Consequently, it is doubtful that the mentioned kP calculations adequately describe the valence band at all dQW values.

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21

Xiang, Bin, and Ying Zhang. "(Invited) Large Carrier Mobility in Graphene with Enhanced Shubnikov–De Haas Quantum Oscillations." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1314. http://dx.doi.org/10.1149/ma2022-02361314mtgabs.

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Анотація:

Graphene devices are susceptible to the surrounding environment1-4. For example, the substrate in contact with graphene influences the device performance because the carriers are confined in two-dimensional (2D) atomic thickness. However, 2D van der Waals dielectric materials used as an interface modifier can provide a path to improve the device quality. In this paper, we report an enhanced mobility of 35000 cm2 V-1 s-1 in a CrOCl-coated monolayer graphene on the SiO2/Si substrate through a dielectric shielding effect. When monolayer graphene is sandwiched between two layers of 2D CrOCl insulator, the enhanced mobility can be 70000 cm2 V-1 s-1. Because of the enhanced mobility, the Shubnikov-de Haas (SdH) quantum oscillation is also observed with the amplitude linearly decreasing with increasing temperature, consistent with the standard Lifshitz-Kosevich theory, and the effect persists at temperatures up to 100 K. Our work paves a way to improve graphene mobility and realize nontrivial quantum states at high temperature for the exploration of potential applications in electronics.

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22

Hartstein, Máté, Hsu Liu, Yu-Te Hsu, Beng S. Tan, Monica Ciomaga Hatnean, Geetha Balakrishnan, and Suchitra E. Sebastian. "Intrinsic Bulk Quantum Oscillations in a Bulk Unconventional Insulator SmB6." iScience 23, no. 11 (November 2020): 101632. http://dx.doi.org/10.1016/j.isci.2020.101632.

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23

Alisultanov, Z. Z., G. O. Abdullaev, P. D. Grigoriev, and N. A. Demirov. "Quantum Oscillations of Interlayer Conductivity in a Multilayer Topological Insulator." Journal of Experimental and Theoretical Physics 136, no. 3 (March 2023): 353–67. http://dx.doi.org/10.1134/s106377612303010x.

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24

Muntyanu, Fiodor M., Vitalie Chistol, and Elena Condrea. "Atypical topological features of the Bi1-xSbx(0 ≤ x ≤ 0.2) nano-width bicrystaline boundaries." Moldavian Journal of the Physical Sciences 20, no. 2 (January 2022): 123–28. http://dx.doi.org/10.53081/mjps.2021.20-2.02.

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In this paper, we report a number of atypical features of superconductivity, weak ferromagnetism, and quantum transport observed at low temperatures at bicrystalline interfaces of the first predicted and experimentally realized three-dimensional topological insulator (3D TI) Bi1xSbx (0 ≤ x ≤ 0.2). Pure bicrystals and bicrystals slightly doped (≤0.01 at %) with Te (donor) and Sn (acceptor) impurities are used to fully satisfy the conditions of manifestation of transport quantum oscillations. These 3D TI interfaces exhibit fascinating quantum topological properties, which require extensive basic and applied research.

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25

Jost, Andreas, Michel Bendias, Jan Böttcher, Ewelina Hankiewicz, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, et al. "Electron–hole asymmetry of the topological surface states in strained HgTe." Proceedings of the National Academy of Sciences 114, no. 13 (March 9, 2017): 3381–86. http://dx.doi.org/10.1073/pnas.1611663114.

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Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron–hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected.

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26

Konopko, L. A., A. A. Nikolaeva, T. E. Huber, and J. P. Ansermet. "Transport Properties of Topological Insulator Bi0.83Sb0.17 Nanowires." MRS Proceedings 1785 (2015): 1–6. http://dx.doi.org/10.1557/opl.2015.375.

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ABSTRACTWe have investigated the transport properties of topological insulator based on single-crystal Bi0.83Sb0.17 nanowires. The single-crystal nanowire samples in the diameter range 200 nm – 1.1 μm were prepared by the high frequency liquid phase casting in a glass capillary using an improved Ulitovsky technique; they were cylindrical single-crystals with (1011) orientation along the wire axis. In this orientation, the wire axis makes an angle of 19.5o with the bisector axis C1 in the bisector-trigonal plane. Bi0.83Sb0.17 is a narrow gap semiconductor with energy gap at L point of Brillouin zone ΔE= 21 meV. In accordance with the measurements of the temperature dependence of the resistivity of the samples resistance increases with decreasing temperature, but at low temperatures decrease in the resistance is observed. This effect, decrease in the resistance, is a clear manifestation of the interesting properties of topological insulators - the presence on its surface of a highly conducting zone. The Arrhenius plot of resistance R in samples with diameter d=1.1 µm and d=200 nm indicates a thermal activation behavior with an activation gap ΔE= 21 and 35 meV, respectively, which proves the presence of the quantum size effect in these samples. We found that in the range of diameter 1100 nm - 200 nm when the diameter decreases the energy gap is growing as 1/d. We have investigated magnetoresistance of Bi0.83Sb0.17 nanowires at various magnetic field orientations. From the temperature dependences of Shubnikov de Haas oscillation amplitude for different orientation of magnetic field we have calculated the cyclotron mass mc and Dingle temperature TD for longitudinal and transverse (B||C3 and B||C2) directions of magnetic fields, which equal 1.96*10-2m0, 9.8 K, 8.5*10-3m0 , 9.4 K and 1.5*10-1m0 , 2.8 K respectively. The observed effects are discussed.

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27

Hsiung, Te-Chih, Ding-Yuan Chen, Li Zhao, Yi-Hsin Lin, Chung-Yu Mou, Ting-Kuo Lee, Maw-Kuen Wu, and Yang-Yuan Chen. "Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes." Applied Physics Letters 103, no. 16 (October 14, 2013): 163111. http://dx.doi.org/10.1063/1.4826092.

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28

Kim, Hong-Seok, Tae-Ha Hwang, Nam-Hee Kim, Yasen Hou, Dong Yu, H. S. Sim, and Yong-Joo Doh. "Adjustable Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbons." ACS Nano 14, no. 10 (October 8, 2020): 14118–25. http://dx.doi.org/10.1021/acsnano.0c06892.

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29

Wang, Ke-Jie, Wei Wang, Min-Hao Zhang, Xiao-Qian Zhang, Pei Yang, Bo Liu, Ming Gao, et al. "Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe." Chinese Physics Letters 34, no. 2 (February 2017): 026201. http://dx.doi.org/10.1088/0256-307x/34/2/026201.

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30

Xiong, Jun, A. C. Petersen, Dongxia Qu, Y. S. Hor, R. J. Cava, and N. P. Ong. "Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity ()." Physica E: Low-dimensional Systems and Nanostructures 44, no. 5 (February 2012): 917–20. http://dx.doi.org/10.1016/j.physe.2011.09.011.

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31

Lo, Shun-Tsung, Yi-Ting Wang, G. Bohra, E. Comfort, T.-Y. Lin, M.-G. Kang, G. Strasser, et al. "Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields." Journal of Physics: Condensed Matter 24, no. 40 (September 12, 2012): 405601. http://dx.doi.org/10.1088/0953-8984/24/40/405601.

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32

Taskin, A. A., Satoshi Sasaki, Kouji Segawa, and Yoichi Ando. "Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi2Se3." Advanced Materials 24, no. 41 (August 21, 2012): 5581–85. http://dx.doi.org/10.1002/adma.201201827.

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33

Kunisada, So, Shunsuke Isono, Yoshimitsu Kohama, Shiro Sakai, Cédric Bareille, Shunsuke Sakuragi, Ryo Noguchi, et al. "Observation of small Fermi pockets protected by clean CuO2 sheets of a high-Tc superconductor." Science 369, no. 6505 (August 13, 2020): 833–38. http://dx.doi.org/10.1126/science.aay7311.

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Анотація:

In cuprate superconductors with high critical transition temperature (Tc), light hole-doping to the parent compound, which is an antiferromagnetic Mott insulator, has been predicted to lead to the formation of small Fermi pockets. These pockets, however, have not been observed. Here, we investigate the electronic structure of the five-layered Ba2Ca4Cu5O10(F,O)2, which has inner copper oxide (CuO2) planes with extremely low disorder, and find small Fermi pockets centered at (π/2, π/2) of the Brillouin zone by angle-resolved photoemission spectroscopy and quantum oscillation measurements. The d-wave superconducting gap opens along the pocket, revealing the coexistence between superconductivity and antiferromagnetic ordering in the same CuO2 sheet. These data further indicate that superconductivity can occur without contribution from the antinodal region around (π, 0), which is shared by other competing excitations.

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34

Караштин, Е. А. "Эффект спинового насоса в системе ферромагнитный изолятор/нормальный металл: простая квантово-механическая модель". Физика твердого тела 61, № 9 (2019): 1634. http://dx.doi.org/10.21883/ftt.2019.09.48102.05n.

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We suggest a simple quantum-mechanical model of the spin pumping effect that appears when the ferromagnetic resonance is excited in a magnetic insulator that has a flat contact with a nonmagnetic metal. The model is based on the solution of Schrodinger equation for conductance electrons in the metal. We show that electron reflection with spin flip at the boundary with the insulator leads to the dc and ac (oscillating with the frequency of microwave field exciting the resonance) spin flow from ferromagnet to insulator. The dc effect is small compared to the ac effect; the small parameter here is the ratio of exchange constant in the ferromagnet to the energy of potential barrier between the metal and insulator which is greater than the Fermi energy. The obtained result agrees to known experimental data. The developed model provides a simple and spectacular insight into the phenomenon roots and allows to make analysis of the effect dependence on the parameters of considered system.

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35

Xu, Gongqin, Anne de Visser, Yingkai Huang, and Xingyu Mao. "Quantum Oscillations and Chiral Anomaly in a Bi0.96Sb0.04 Single Crystal." Advances in Condensed Matter Physics 2019 (August 4, 2019): 1–7. http://dx.doi.org/10.1155/2019/5628685.

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Анотація:

Bi1-xSbx alloys are of special significance in topological insulator research. Here we focus on the Bi0.96Sb0.04 alloy in which the conduction band edge just touches the valence band edge. Transport measurements show quantum oscillations in the longitudinal (Shubnikov–de Haas effect) and transverse magnetoresistance originating from a spheroidal Fermi surface pocket. Further investigation of the longitudinal magnetoresistance for the magnetic field parallel to the electrical current shows a small nonmonotonic magnetoresistance that is attributed to a competition of weak-antilocalization effects and a topological term related to the chiral anomaly.

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36

Bhattacharyya, Biplab, Alka Sharma, V. P. S. Awana, A. K. Srivastava, T. D. Senguttuvan, and Sudhir Husale. "Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)." Journal of Physics: Condensed Matter 29, no. 11 (February 7, 2017): 115602. http://dx.doi.org/10.1088/1361-648x/aa5536.

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37

Dubovskii, L. B. "Quantum Magnetic Oscillations of the Surface Tension at a Metal-Insulator Interface." Journal of Low Temperature Physics 182, no. 5-6 (January 11, 2016): 192–205. http://dx.doi.org/10.1007/s10909-015-1455-y.

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38

Hwang, Tae-Ha, Hong-Seok Kim, Yasen Hou, Dong Yu, and Yong-Joo Doh. "Gate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon." Journal of the Korean Physical Society 77, no. 9 (November 2020): 797–801. http://dx.doi.org/10.3938/jkps.77.797.

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39

Micu, C., and E. Papp. "The Derivation of 1/N Energy-Solutions to the harper-Equation and Related Magnetizations." International Journal of Modern Physics B 12, no. 18 (July 20, 1998): 1847–70. http://dx.doi.org/10.1142/s021797929800106x.

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Анотація:

Proofs are given for the first time that the energy-spectrum of the Harper-equation can be derived in a closed implicit form by using the one-dimensional limit of the 1/N-description. Explicitly solvable cases are discussed in some more detail for Δ=1. Here Δ expresses the Harper-parameter discriminating between metallic (Δ<1) and insulator (Δ>1) phases. Related magnetizations have been established by applying both Dingle- and quantum-gas approaches, now for a fixed value of the Fermi-level. The first description leads to large paramagnetic-like magnetizations oscillating with nearly field-independent amplitudes increasing with the temperature. In the second case one deals with magnetization-oscillations centered around the zero-value, such that the amplitudes decrease both with the field and the temperature.

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40

Kim, SeongMin. "Model of electric charge distribution in the trap of a close-contact TENG system." Open Physics 18, no. 1 (January 31, 2020): 1–5. http://dx.doi.org/10.1515/phys-2020-0001.

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AbstractElectron propagation in a trapped state between an insulator and a metal during very close contact in a triboelectric nanogenerator (TENG) system was considered in this study. A single energy level (E0) was assumed for the trap and wave function inside the trap, which is related to the ground state energy. The phase of the waveform in the metal (neglecting the rebound effect at the wall) was assumed very small (δ′ ≪ 1) because of the large size of the metal. The contact distance between the trap and metal is very small, which allows us to ignore the vacuum potential. Based on our results, the probability of finding an electron inside the trap as a function of time was found to be in oscillation (i.e., back-and-forth propagation of the electron between the trap and metal leads to an equilibrium state). These results can be used to understand the quantum mechanisms of continuous contact, particularly in sliding-mode TENG systems.

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41

Arutyunov, Konstantin Yu, and Janne Samuel Lehtinen. "High dynamic resistance elements based on a Josephson junction array." Beilstein Journal of Nanotechnology 11 (March 3, 2020): 417–20. http://dx.doi.org/10.3762/bjnano.11.32.

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A chain of superconductor–insulator–superconductor junctions based on Al–AlO x –Al nanostructures and fabricated using conventional lift-off lithography techniques was measured at ultra-low temperatures. At zero magnetic field, the low current bias dynamic resistance can reach values of ≈1011 Ω. It was demonstrated that the system can provide a decent quality current biasing circuit, enabling the observation of Coulomb blockade and Bloch oscillations in ultra-narrow Ti nanowires associated with the quantum phase-slip effect.

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42

Qu, D. X., Y. S. Hor, J. Xiong, R. J. Cava, and N. P. Ong. "Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3." Science 329, no. 5993 (July 29, 2010): 821–24. http://dx.doi.org/10.1126/science.1189792.

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43

Rogacheva, E. I., A. V. Budnik, A. Yu Sipatov, O. N. Nashchekina, and M. S. Dresselhaus. "Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films." Applied Physics Letters 106, no. 5 (February 2, 2015): 053103. http://dx.doi.org/10.1063/1.4907319.

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44

Yu, Sunkyu, Xianji Piao, and Namkyoo Park. "Topologically protected optical signal processing using parity–time-symmetric oscillation quenching." Nanophotonics 10, no. 11 (July 29, 2021): 2883–91. http://dx.doi.org/10.1515/nanoph-2021-0215.

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Анотація:

Abstract The concept of topology is universally observed in various physical objects when the objects can be described by geometric structures. Although a representative example is the knotted geometry of wavefunctions in reciprocal space for quantum Hall family and topological insulators, topological states have also been defined for other physical quantities, such as topologically distinct Fermi surfaces and enhanced lattice degrees of freedom in hyperbolic geometry. Here, we investigate a different class of topological states – topological geometry of dynamical state trajectories – in non-Hermitian and nonlinear optical dynamics, revealing topologically protected oscillation quenching mechanisms determined by parity–time (PT) symmetry. For coupled systems composed of nonlinear gain and loss elements, we classify the topology of equilibria separately for unbroken and broken PT symmetry, which result in distinct oscillation quenching mechanisms: amplitude death and oscillation death. We then show that these PT-symmetric quenching mechanisms lead to immunity against temporal perturbations, enabling the applications of topologically protected laser modulation and rectification. The observed connection between the topological geometry of dynamical states, oscillation quenching phenomena in dynamical systems theory, and PT symmetry provides a powerful toolkit for noise-immune signal processing.

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45

Kargarian, Mehdi, Mohit Randeria, and Yuan-Ming Lu. "Are the surface Fermi arcs in Dirac semimetals topologically protected?" Proceedings of the National Academy of Sciences 113, no. 31 (July 19, 2016): 8648–52. http://dx.doi.org/10.1073/pnas.1524787113.

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Motivated by recent experiments probing anomalous surface states of Dirac semimetals (DSMs) Na3Bi and Cd3As2, we raise the question posed in the title. We find that, in marked contrast to Weyl semimetals, the gapless surface states of DSMs are not topologically protected in general, except on time-reversal-invariant planes of surface Brillouin zone. We first demonstrate this finding in a minimal four-band model with a pair of Dirac nodes at k=(0,0,±Q), where gapless states on the side surfaces are protected only near kz=0. We then validate our conclusions about the absence of a topological invariant protecting double Fermi arcs in DSMs, using a K-theory analysis for space groups of Na3Bi and Cd3As2. Generically, the arcs deform into a Fermi pocket, similar to the surface states of a topological insulator, and this pocket can merge into the projection of bulk Dirac Fermi surfaces as the chemical potential is varied. We make sharp predictions for the doping dependence of the surface states of a DSM that can be tested by angle-resolved photoemission spectroscopy and quantum oscillation experiments.

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46

Moetakef, Pouya, Daniel G. Ouellette, James R. Williams, S. James Allen, Leon Balents, David Goldhaber-Gordon, and Susanne Stemmer. "Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface." Applied Physics Letters 101, no. 15 (October 8, 2012): 151604. http://dx.doi.org/10.1063/1.4758989.

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47

Sevriuk, V. A., W. Liu, J. Rönkkö, H. Hsu, F. Marxer, T. F. Mörstedt, M. Partanen, et al. "Initial experimental results on a superconducting-qubit reset based on photon-assisted quasiparticle tunneling." Applied Physics Letters 121, no. 23 (December 5, 2022): 234002. http://dx.doi.org/10.1063/5.0129345.

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Анотація:

We present here our recent results on qubit reset scheme based on a quantum-circuit refrigerator (QCR). In particular, we use the photon-assisted quasiparticle tunneling through a superconductor–insulator–normal-metal–insulator–superconductor junction to controllably decrease the energy relaxation time of the qubit during the QCR operation. In our experiment, we use a transmon qubit with dispersive readout. The QCR is capacitively coupled to the qubit through its normal-metal island. We employ rapid, square-shaped QCR control voltage pulses with durations in the range of 2–350 ns and a variety of amplitudes to optimize the reset time and fidelity. Consequently, we reach a qubit ground-state probability of roughly 97% with 80-ns pulses starting from the first excited state. The qubit state probability is extracted from averaged readout signal, where the calibration is based on Rabi oscillations, thus not distinguishing the residual thermal population of the qubit.

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48

SRIVASTAVA, VIPIN. "NEW INSIGHT INTO THE INTEGER QUANTUM HALL EFFECT." International Journal of Modern Physics B 15, no. 19n20 (August 10, 2001): 2783–92. http://dx.doi.org/10.1142/s0217979201006574.

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By considering the degeneracies of the localized and extended states separately we have investigated the integer quantum Hall effect (IQHE) in terms of fraction of extended states in a Landau subband. The IQHE is found to manifest itself as saw-tooth oscillations in the number density of the extended electrons as a function of magnetic field. Preliminary results of an experiment are also presented that support this picture. It is found that contrary to the traditional theoretical belief, the extended states form a non-vanishing fraction of the states in a Landau subband. Significantly it is shown that if this was not so, the IQHE would not arise in the first place. This result is relevant in connection with the long standing question of nature of transition between plateaus, and also the recent discovery of intriguing electron density driven metal–insulator transition in two-dimensional systems. The results also show that extended states float up in energy in addition to being systematically destroyed as the magnetic field is reduced, and that the system can become completely localized at a nonzero magnetic field.

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49

Kim, Hyun-Tak. "Analysis of the diverging effective mass in YaBa2Cu3O6+x for high-Tc mechanism and pairing symmetry." International Journal of Modern Physics B 32, no. 17 (July 9, 2018): 1840031. http://dx.doi.org/10.1142/s0217979218400313.

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Анотація:

In order to clarify the high-T[Formula: see text] mechanism in inhomogeneous cuprate layer superconductors, we deduce and find the correlation strength which has not revealed before, contributing to the formation of the Cooper pair and the two-dimensional density of state, and demonstrate the pairing symmetry in the superconductors which is still controversial. To the open questions, the fitting and analysis of the diverging effective mass with decreasing doping, extracted from the acquired quantum-oscillation data in underdoped YaBa2Cu3O[Formula: see text] superconductors, using the extended Brinkman–Rice (BR) picture, reveal the nodal constant Fermi energy with the maximum carrier density, a constant Coulomb correlation strength [Formula: see text]=U/U[Formula: see text]0.90, and a growing Fermi arc from the nodal Fermi point to the isotropic Fermi surface with an increasing x. The growing of the Fermi arc indicates that a superconducting gap develops with x from the node (underdoped) to the anti-node (optimally or over-doped). The large [Formula: see text] results from the [Formula: see text]-wave metal–insulator transition for the pseudogap phase in lightly doped superconductors, which can be direct evidence for high-T[Formula: see text] superconductivity. The quantum critical point is regarded as the nodal Fermi point satisfied with the BR picture. The experimentally measured mass diverging behavior is an average effect and the true effective mass is constant. As an application of the nodal constant carrier density, the superconducting node gap analyzed by an angle-resolved photoemission spectroscopy (ARPES) is a precursor of s-wave symmetry in underdoped cuprates. Furthermore, the half-flux quantum, induced by the circulation of d-wave supercurrent and observed by the phase sensitive Josephson-[Formula: see text] junction experiments, is not shown due to “anisotropic or asymmetric effect” appearing in superconductors with trapped flux.

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50

Braga, Maria Helena. "Coherence in the Ferroelectric A3ClO (A = Li, Na) Family of Electrolytes." Materials 14, no. 9 (May 5, 2021): 2398. http://dx.doi.org/10.3390/ma14092398.

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Анотація:

Coherence is a major caveat in quantum computing. While phonons and electrons are weakly coupled in a glass, topological insulators strongly depend on the electron-phonon coupling. Knowledge of the electron−phonon interaction at conducting surfaces is relevant from a fundamental point of view as well as for various applications, such as two-dimensional and quasi-1D superconductivity in nanotechnology. Similarly, the electron−phonon interaction plays a relevant role in other transport properties e.g., thermoelectricity, low-dimensional systems as layered Bi and Sb chalcogenides, and quasi-crystalline materials. Glass-electrolyte ferroelectric energy storage cells exhibit self-charge and self-cycling related to topological superconductivity and electron-phonon coupling; phonon coherence is therefore important. By recurring to ab initio molecular dynamics, it was demonstrated the tendency of the Li3ClO, Li2.92Ba0.04ClO, Na3ClO, and Na2.92Ba0.04ClO ferroelectric-electrolytes to keep phonon oscillation coherence for a short lapse of time in ps. Double-well energy potentials were obtained while the electrolyte systems were thermostatted in a heat bath at a constant temperature. The latter occurrences indicate ferroelectric type behavior but do not justify the coherent self-oscillations observed in all types of cells containing these families of electrolytes and, therefore, an emergent type phenomenon where the full cell works as a feedback system allowing oscillations coherence must be realized. A comparison with amorphous SiO2 was performed and the specific heats for the various species were calculated.

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