Готові списки джерел за темами / Quantum double model

Зміст

  1. Статті в журналах
  2. Дисертації
  3. Книги
  4. Частини книг
  5. Тези доповідей конференцій

Добірка наукової літератури з теми "Quantum double model"

Автор: Grafiati
Опубліковано: 7 грудня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Quantum double model".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Quantum double model"

1

Favalli, T., and A. Smerzi. "A model of quantum spacetime." AVS Quantum Science 4, no. 4 (December 2022): 044403. http://dx.doi.org/10.1116/5.0107210.

Повний текст джерела
Анотація:
We consider a global quantum system (the “Universe”) satisfying a double constraint, both on total energy and total momentum. Generalizing the Page and Wootters quantum clock formalism, we provide a model of 3 + 1 dimensional, non-relativistic, quantum spacetime emerging from entanglement among different subsystems in a globally “timeless” and “positionless” Universe.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Fiedler, Leander, and Pieter Naaijkens. "Haag duality for Kitaev’s quantum double model for abelian groups." Reviews in Mathematical Physics 27, no. 09 (October 2015): 1550021. http://dx.doi.org/10.1142/s0129055x1550021x.

Повний текст джерела
Анотація:
We prove Haag duality for cone-like regions in the ground state representation corresponding to the translational invariant ground state of Kitaev’s quantum double model for finite abelian groups. This property says that if an observable commutes with all observables localized outside the cone region, it actually is an element of the von Neumann algebra generated by the local observables inside the cone. This strengthens locality, which says that observables localized in disjoint regions commute. As an application, we consider the superselection structure of the quantum double model for abelian groups on an infinite lattice in the spirit of the Doplicher–Haag–Roberts program in algebraic quantum field theory. We find that, as is the case for the toric code model on an infinite lattice, the superselection structure is given by the category of irreducible representations of the quantum double.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Chen, Lei, Zhen-Yu Wang, Wu Hui, Cheng-Yu Chu, Ji-Min Chai, Jin Xiao, Yu Zhao, and Jin-Xiang Ma. "Quantum ratchet effect in a time non-uniform double-kicked model." International Journal of Modern Physics B 31, no. 16-19 (July 26, 2017): 1744063. http://dx.doi.org/10.1142/s0217979217440635.

Повний текст джерела
Анотація:
The quantum ratchet effect means that the directed transport emerges in a quantum system without a net force. The delta-kicked model is a quantum Hamiltonian model for the quantum ratchet effect. This paper investigates the quantum ratchet effect based on a time non-uniform double-kicked model, in which two flashing potentials alternately act on a particle with a homogeneous initial state of zero momentum, while the intervals between adjacent actions are not equal. The evolution equation of the state of the particle is derived from its Schrödinger equation, and the numerical method to solve the evolution equation is pointed out. The results show that quantum resonances can induce the ratchet effect in this time non-uniform double-kicked model under certain conditions; some quantum resonances, which cannot induce the ratchet effect in previous models, can induce the ratchet effect in this model, and the strengths of the ratchet effect in this model are stronger than those in previous models under certain conditions. These results enrich people’s understanding of the delta-kicked model, and provides a new optional scheme to control the quantum transport of cold atoms in experiment.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Cui, Shawn X., Dawei Ding, Xizhi Han, Geoffrey Penington, Daniel Ranard, Brandon C. Rayhaun, and Zhou Shangnan. "Kitaev's quantum double model as an error correcting code." Quantum 4 (September 24, 2020): 331. http://dx.doi.org/10.22331/q-2020-09-24-331.

Повний текст джерела
Анотація:
Kitaev's quantum double models in 2D provide some of the most commonly studied examples of topological quantum order. In particular, the ground space is thought to yield a quantum error-correcting code. We offer an explicit proof that this is the case for arbitrary finite groups. Actually a stronger claim is shown: any two states with zero energy density in some contractible region must have the same reduced state in that region. Alternatively, the local properties of a gauge-invariant state are fully determined by specifying that its holonomies in the region are trivial. We contrast this result with the fact that local properties of gauge-invariant states are not generally determined by specifying all of their non-Abelian fluxes --- that is, the Wilson loops of lattice gauge theory do not form a complete commuting set of observables. We also note that the methods developed by P. Naaijkens (PhD thesis, 2012) under a different context can be adapted to provide another proof of the error correcting property of Kitaev's model. Finally, we compute the topological entanglement entropy in Kitaev's model, and show, contrary to previous claims in the literature, that it does not depend on whether the ``log dim R'' term is included in the definition of entanglement entropy.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Vimala, Palanichamy, and N. R. Nithin Kumar. "Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs." Journal of Nano Research 61 (February 2020): 88–96. http://dx.doi.org/10.4028/www.scientific.net/jnanor.61.88.

Повний текст джерела
Анотація:
In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Duan, Zhongzheng, Wenxi Luo, and Xiaohan Xu. "Transmission coefficient in double barrier quantum tunnelling effect." Theoretical and Natural Science 25, no. 1 (December 20, 2023): 199–204. http://dx.doi.org/10.54254/2753-8818/25/20240965.

Повний текст джерела
Анотація:
At the turn of the twentieth century, the establishment of quantum theory propelled rapid advancements, particularly in the understanding of quantum tunnellinga fundamental phenomenon in quantum mechanics crucial for various physical processes. The quantum phenomenon of particle passes through potential barriers is of great importance. In classical physics, when the energy of a particle is less than the height of a double barrier structure, it is impossible for it to pass through. However, quantum mechanics allows a particle to penetrate the barrier and emerge on the other side. This paper explores the quantum tunnelling effect, focusing on the single potential barrier model in one dimension and subsequently extending to the double potential barrier model. The Schrdinger equation provides the foundational framework for elucidating the motion of microscopic particles, emphasizing wave-particle duality inherent in quantum mechanics. The analysis of the single potential barrier model involves solving the Schrdinger equation in different regions, determining wave functions and coefficients through boundary conditions. The transmission coefficient is derived, representing the probability of a particle passing through a barrier. In the case of a thick barrier, an approximate form for transmission coefficient is provided, demonstrating the exponential decrease in transmission probability with increasing barrier thickness.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Chen, Zuo Peng, and Jin Ran Gao. "The Research of Qubit-Field System Quantum Entanglement under J-C Model." Applied Mechanics and Materials 203 (October 2012): 464–68. http://dx.doi.org/10.4028/www.scientific.net/amm.203.464.

Повний текст джерела
Анотація:
In this article we plan to get a equation about the concurrence. We select the J-C model, then introduce the double-cavity and double-atom system in this model, and consider the two-atom entanglement. By using the Taylor expansion to calculate the quantum correlations concurrence in this system. Finally we deduce this equation which can predict the sudden death and rebirth of the spin quantum entanglement.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Edwards, D. M., A. C. M. Green, and K. Kubo. "Quantum spins in the double exchange model of manganites." Physica B: Condensed Matter 259-261 (January 1999): 810–11. http://dx.doi.org/10.1016/s0921-4526(98)00944-2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Beigi, Salman, Peter W. Shor, and Daniel Whalen. "The Quantum Double Model with Boundary: Condensations and Symmetries." Communications in Mathematical Physics 306, no. 3 (June 28, 2011): 663–94. http://dx.doi.org/10.1007/s00220-011-1294-x.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

de Martino, Salvatore, Silvio de Siena, and Pasquale Sodano. "Critical behavior of the quantum double-sine-Gordon model." Physical Review B 32, no. 5 (September 1, 1985): 3304–5. http://dx.doi.org/10.1103/physrevb.32.3304.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "Quantum double model"

1

Ritz-Zwilling, Anna. "Topological order at finite temperature in string-net and quantum double models." Electronic Thesis or Diss., Sorbonne université, 2024. http://www.theses.fr/2024SORUS268.

Повний текст джерела
Анотація:
L'ordre topologique est un ordre quantique particulier qui apparaît dans les systèmes quantiques gappés et fortement interactifs, et qui ne peut pas être décrit par un paramètre d'ordre local et une brisure spontanée de symétrie. En deux dimensions et à température nulle, cet ordre est caractérisé par une dégénérescence de l'état fondamental dépendant de la topologie de la variété, de l'intrication à longue portée et la présence de quasi-particules avec des nombres quantiques et des statistiques d'échange fractionnaires (également appelées anyons). Cette thèse étudie l'ordre topologique à température finie au moyen de deux modèles jouets exactement solubles : le modèle de string-net (réseau de cordes) de Levin et Wen et le modèle du double quantique de Kitaev. L'accent principal est mis sur le modèle de string-net, qui réalise tous les ordres topologiques doublés achiraux, c'est-à-dire tous les ordres topologiques décrits par un centre de Drinfeld. Ce modèle prend comme entrée une catégorie de fusion unitaire et produit le centre de Drinfeld correspondant en sortie. Dans un premier temps, nous dérivons une formule pour les dégénérescences spectrales du modèle, qui dépendent à la fois de la topologie et de l'ordre topologique considéré. En particulier, les dégénérescences dépendent non seulement du centre de Drinfeld mais aussi de la catégorie d'entrée. Ensuite, nous calculons la fonction de partition, à partir de laquelle nous obtenons l'entropie, la chaleur spécifique, et montrons qu'il n'y a pas de transition de phase à température finie. Nous identifions un ensemble particulier d'objets du centre de Drinfeld, appelés fluxons purs, qui dominent le comportement de la fonction de partition dans la limite thermodynamique, et étudions leurs propriétés. Nous obtenons également les moyennes thermiques des opérateurs de cordes fermées et étudions l'information mutuelle. Enfin, nous appliquons notre approche aux modèles du double quantique, où nous dérivons également une formule générale pour les dégénérescences spectrales, la fonction de partition et l'entropie d'intrication, permettant une étude plus générale et détaillée des propriétés à température finie par rapport aux études précédentes
Topological order is a special kind of quantum order which appears in strongly interacting gappedquantum systems and does not admit a description by a local order parameter and spontaneous symmetry breaking. In two dimensions and at zero temperature, it is instead characterized by a ground-state degeneracy dependent on the manifold topology, long-range entanglement, and the presence of quasiparticles with fractional quantum numbers and exchange statistics (also called anyons). This thesis investigates topological order at finite temperature by means of two exactly-solvable toy models: the string-net model of Levin and Wen and the Kitaev quantum double model. The main focus is on the string-net model, which realizes all achiral doubled topological orders, i.e., all topological orders described by Drinfeld centers. This model takes a unitary fusion category as aninput, and produces the corresponding Drinfeld center as an output. First, we derive a formula forthe spectral degeneracies that depend on both the topology, and the topological order considered. In particular, the degeneracies depend not only on the Drinfeld center but also on theinput category. Next, we compute the partition function, from which we obtain the entropy, specific heat, and show that there is no finite-temperature phase transition. We identify a particular set of objects of the Drinfeld center, called pure fluxons, which drive the partition function in the thermodynamic limit, and study their properties. We also obtain the thermal averages of closed string operators, and study the mutual information. Finally, we carry over our approach to the quantum double models, where we also derive a general formula for the spectral degeneracies, partition function and entanglement entropy, allowing for a more general and detailed study of finite-temperature properties compared to previous studies
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Kim, Ji S. "Electron transport through the double quantum dots in Aharonov-Bohm rings." Virtual Press, 2005. http://liblink.bsu.edu/uhtbin/catkey/1319544.

Повний текст джерела
Анотація:
We numerically investigate a total transmission probability through QDs embedded in an AB ring. The QDs are formed by delta function-like double potential barriers and a magnetic flux is penetrated in the center of the ring. In particular, we study the coupled double-QDs in series and non-coupled double-QDs in parallel in an AB ring. In each model, we show the total transmission probability as a function of QD size and electron incident energy, and present the transmission amplitude on the complex-energy plane. Of interest is the change and progression of Fano resonances and corresponding zero-pole pairs on the complex-energy plane with magnetic flux in the center of the ring.To accomplish this, we analytically solve the scattering matrix at each junction and the transfer matrix through the arms of the ring using Schrodinger equation for the delta function barriers. Then, the total transmission probability is obtained as a function of electron energy and magnetic flux by cascading these matrices. Finally, the solutions of the analytical equations and the graphical output of the transmission characteristics in the system will be obtained numerically by using Mathematica programs run on desktop computers.
Department of Physics and Astronomy
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Fiedler, Leander Karl Wilhelm [Verfasser]. "Haag duality and Jones-Kosaki-Longo index in Kitaev's quantum double models for finite abelian groups / Leander Karl Wilhelm Fiedler." Hannover : Technische Informationsbibliothek (TIB), 2017. http://d-nb.info/1136090622/34.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Bianco, Gianluca. "Study of the quantum interference between singly and doubly resonant top-quark production in proton-proton collisions at the LHC with the ATLAS detector." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/22108/.

Повний текст джерела
Анотація:
The top quark is the heaviest known elementary particle of the Standard Model. Thanks to its particular properties, it allows to explore unique physics domains, inaccessible otherwise. One of them is the quantum interference between singly (tW) and doubly (t ̄t)resonant top quark production in proton-proton collisions, which can lead to identical WbWb final-states when an additional b-quark is radiated during a singly-resonant production. Studying this process is very important for a better knowledge of the Standard Model, but also to investigate some Beyond the Standard Model processes: for example,the search for top squarks suffers a large background contamination fromt W and t ̄t in the interference region. In this work, the measurement of the particle-level differential cross-section of the WbWb final-state in the eμ dilepton channel is provided, in order to better investigate the interference-sensitive region of these processes. The measurement is performed using the full dataset collected by the ATLAS detector from proton-proton collisions at the LHC during Run-2 at √s= 13 TeV corresponding to an integrated luminosity of 139 fb−1. The differential cross-section has been measured as a function of two interference-sensitive variables, defined as mminimaxbl and ∆R(b1,b2). Besides the single-differential cross-sections as a function of mminimaxbl and ∆R(b1,b2), also the double-differential cross-section as a function of mminimaxbl in bins of ∆R(b1,b2) is measured. The WbWb differential cross-section has been successfully extracted and compared to different schemes: the Diagram Removal and the Diagram Subtraction. This twopredictions model in a different way the quantum interference description.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Michaille, Laurent. "Étude des états vibrationnels très excités de la molécule CS2 : dynamique non linéaire et corrélations spectrales." Université Joseph Fourier (Grenoble ; 1971-2015), 1998. http://www.theses.fr/1998GRE10009.

Повний текст джерела
Анотація:
Pour les etats de vibration tres excites de certaines molecules, l'attribution en termes des nombres quantiques usuels n'est plus valable. Dans cs#2, les modes d'elongation symetrique et de pliage sont fortement couples par une resonance non lineaire de fermi. Au moins a basse energie le mode d'elongation antisymetrique reste faiblement couple par des anharmonicites. La dynamique quantique, classique et semiclassique de ce modele tres important en physique moleculaire est etudie en detail. Il est montre comment les bifurcations successives des orbites periodiques permettent de rendre compte de l'evolution de la dynamique quantique en fonction de l'energie. L'etude du vibrogramme permet egalement d'evaluer la validite du modele de fermi entre 12000 et 19000 cm##1 dans un domaine ou elle n'etait pas connue. Nous avons ensuite effectue des experiences de fluorescence resolue a plus de 19000 cm##1 au-dessus du fondamental afin de pratiquer les statistiques spectrales permettant de caracteriser le chaos quantique. Pres de 400 raies experimentales ont ete obtenues. L'analyse demontre plusieurs points importants. En premier lieu, la transition vers le chaos quantique de la molecule vers 13000 cm##1 est remise en question a cause d'une excitation impure. D'autre part, nous avons montre le role de la resolution sur les statistiques spectrales. Des spectres mal resolus peuvent presenter des correlations qui sont des artefacts. Ceci nous a conduit a remettre en question toutes les preuves experimentales existantes de l'existence de chaos quantique vibrationnel dans les molecules. Afin d'obtenir des spectres vibrationnels purs, nous avons developpe deux nouvelles experiences pour la spectroscopie de cs#2 : la double resonance i-r u-v et un jet supersonique. Si les transferts rotationnels observes en double resonance rendent difficiles l'utilisation de cette technique, le jet supersonique permet d'exciter veritablement une raie unique.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Platt, Edward. "WKB Analysis of Tunnel Coupling in a Simple Model of a Double Quantum Dot." Thesis, 2008. http://hdl.handle.net/10012/4145.

Повний текст джерела
Анотація:
A simplified model of a double quantum dot is presented and analyzed, with applications to spin-qubit quantum computation. The ability to trap single electrons in semiconductor nanostructures has led to the proposal of quantum computers with spin-based qubits coupled by the exchange interaction. Current theory predicts an exchange interaction with a -1 power-law dependence on the detuning ϵ, the energy offset between the two dots. However, experiment has shown a -3/2 power-law dependence on ϵ. Using WKB analysis, this thesis explores one possible source of the modified dependence, namely an ϵ-dependent tunnel coupling between the two wells. WKB quantization is used to find expressions for the tunnel coupling of a one-dimensional double-well, and these results are compared to the exact, numerical solutions, as determined by the finite difference method and the transfer matrix method. Small ϵ-dependent corrections to the tunnel coupling are observed. In typical cases, WKB correctly predicts a constant tunnel coupling at leading-order. WKB also predicts small ϵ-dependent corrections for typical cases and strongly ϵ-dependent tunnel couplings for certain exceptional cases. However, numerical simulations suggest that WKB is not accurate enough to analyze the small corrections, and is not valid in the exceptional cases. Deviations from the conventional form of the low-energy Hamiltonian for a double-well are also observed and discussed.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Kómár, Anna. "Quantum Computation and Information Storage in Quantum Double Models." Thesis, 2018. https://thesis.library.caltech.edu/10926/18/toriccode1.pdf.

Повний текст джерела
Анотація:

The results of this thesis concern the real-world realization of quantum computers, specifically how to build their "hard drives" or quantum memories. These are many-body quantum systems, and their building blocks are qubits, the same way bits are the building blocks of classical computers.

Quantum memories need to be robust against thermal noise, noise that would otherwise destroy the encoded information, similar to how strong magnetic field corrupts data classically stored in magnetic many-body systems (e.g., in hard drives). In this work I focus on a subset of many-body models, called quantum doubles, which, in addition to storing the information, could be used to perform the steps of the quantum computation, i.e., work as a "quantum processor".

In the first part of my thesis, I investigate how long a subset of quantum doubles (qudit surface codes) can retain the quantum information stored in them, referred to as their memory time. I prove an upper bound for this memory time, restricting the maximum possible performance of qudit surface codes.

Then, I analyze the structure of quantum doubles, and find two interesting properties. First, that the high-level description of doubles, utilizing only their quasi-particles to describe their states, disregards key components of their microscopic properties. In short, quasi-particles (anyons) of quantum doubles are not in a one-to-one correspondence with the energy eigenstates of their Hamiltonian. Second, by investigating phase transitions of a simple quantum double, D(S3), I map its phase diagram, and interpret the physical processes the theory undergoes through terms borrowed from the Landau theory of phase transitions.

Стилі APA, Harvard, Vancouver, ISO та ін.
8

Kim, Seyoung 1981. "Electron transport in graphene transistors and heterostructures : towards graphene-based nanoelectronics." Thesis, 2012. http://hdl.handle.net/2152/ETD-UT-2012-05-5420.

Повний текст джерела
Анотація:
Two graphene layers placed in close proximity offer a unique system to investigate interacting electron physics as well as to test novel electronic device concepts. In this system, the interlayer spacing can be reduced to value much smaller than that achievable in semiconductor heterostructures, and the zero energy band-gap allows the realization of coupled hole-hole, electron-hole, and electron-electron two-dimensional systems in the same sample. Leveraging the fabrication technique and electron transport study in dual-gated graphene field-effect transistors, we realize independently contacted graphene double layers separated by an ultra-thin dielectric. We probe the resistance and density of each layer, and quantitatively explain their dependence on the backgate and interlayer bias. We experimentally measure the Coulomb drag between the two graphene layers for the first time, by flowing current in one layer and measuring the voltage drop in the opposite layer. The drag resistivity gauges the momentum transfer between the two layers, which, in turn, probes the interlayer electron-electron scattering rate. The temperature dependence of the Coulomb drag above temperatures of 50 K reveals that the ground state in each layer is a Fermi liquid. Below 50 K we observe mesoscopic fluctuations of the drag resistivity, as a result of the interplay between coherent intralayer transport and interlayer interaction. In addition, we develop a technique to directly measure the Fermi energy in an electron system as a function of carrier density using double layer structure. We demonstrate this method in the double layer graphene structure and probe the Fermi energy in graphene both at zero and in high magnetic fields. Last, we realize dual-gated bilayer graphene devices, where we investigate quantum Hall effects at zero energy as a function of transverse electric field and perpendicular magnetic field. Here we observe a development of v = 0 quantum Hall state at large electric fields and in high magnetic fields, which is explained by broken spin and valley spin symmetry in the zero energy Landau levels.
text
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Majumdar, Kausik. "Device Structure And Material Exploration For Nanoscale Transistor." Thesis, 2011. https://etd.iisc.ac.in/handle/2005/2097.

Повний текст джерела
Анотація:
There is a compelling need to explore different material options as well as device structures to facilitate smooth transistor scaling for higher speed, higher density and lower power. The enormous potential of nanoelectronics, and nanotechnology in general, offers us the possibility of designing devices with added functionality. However, at the same time, the new materials come with their own challenges that need to be overcome. In this work, we have addressed some of these challenges in the context of quasi-2D Silicon, III-V semiconductor and graphene. Bulk Si is the most widely used semiconductor with an indirect bandgap of about 1.1 eV. However, when Si is thinned down to sub-10nm regime, the quasi-2D nature of the system changes the electronic properties of the material significantly due to the strong geometrical confinement. Using a tight-binding study, we show that in addition to the increase in bandgap due to quantization, it is possible to transform the original in direct bandgap to a direct one. The effective masses at different valleys are also shown to vary uniquely in an anisotropic way. This ultra-thin Si, when used as a channel in a double gate MOSFET structure, creates so called “volume in version” which is extensively investigated in this work. It has been found that the both the quantum confinement as well as the gating effect play a significant role in determining the spatial distribution of the charge, which in turn has an important role in the characteristics of transistor. Compound III-V semiconductors, like Inx Ga1-xAs, provide low effective mass and low density of states. This, when coupled with strong confinement in a nanowire channel transistor, leads to the “Ultimate Quantum Capacitance Limit” (UQCL) regime of operation, where only the lowest subband is occupied. In this regime, the channel capacitance is much smaller than the oxide capacitance and hence dominates in the total gate capacitance. It is found that the gate capacitance change qualitatively in the UQCL regime, allowing multi-peak, non-monotonic capacitance-voltage characteristics. It is also shown that in an ideal condition, UQCL provides improved current saturation, on-off ratio and energy-delay product, but a degraded intrinsic gate delay. UQCL shows better immunity towards series resistance effect due to increased channel resistance, but is more prone to interfacial traps. A careful design can provide a better on-off ratio at a given gate delay in UQCL compared to conventional MOSFET scenario. To achieve the full advantages of both FinFET and HEMT in III-V domain, a hybrid structure, called “HFinFET” is proposed which provides excellent on performance like HEMT with good gate control like FinFET. During on state, the carriers in the channel are provided using a delta-doped layer(like HEMT) from the top of a fin-like non-planar channel, and during off state, the gates along the side of the fin(like FinFET) help to pull-off the carriers from the channel. Using an effective mass based coupled Poisson-Schrodinger simulation, the proposed structure is found to outperform the state of the art planar and non-planar MOSFETs. By careful optimization of the gate to source-drain underlap, it is shown that the design window of the device can be increased to meet ITRS projections at similar gate length. In addition, the performance degradation of HFinFET in presence of interface traps has been found to be significantly mitigated by tuning the underlap parameter. Graphene is a popular 2D hexagonal carbon crystal with extraordinary electronic, mechani-cal and chemical properties. However, the zero band gap of grapheme has limited its application in digital electronics. One could create a bandgap in grapheme by making quasi-1D strips, called nanoribbon. However, the bandgap of these nanoribbons depends on the the type of the edge, depending on which, one can obtain either semiconducting or metallic nanoribbon. It has been shown that by the application of an external transverse field along the sides of a nanoribbon, one could not only modulate the magnitude of the bandgap, but also change it from direct to indirect. This could open up interesting possibilities for novel electronic and optoelectronic applications. The asymmetric potential distribution inside the nanoribbon is found to result in such direct to indirect bandgap transition. The corresponding carrier masses are also found to be modulated by the external field, following a transition from a“slow”electron to a“fast” electron and vice-versa. Experimentally, it is difficult to control the bandgap in nanoribbons as precise edge control at nanometer scale is nontrivial. One could also open a bandgap in a bilayer graphene, by the application of vertical electric field, which has raised a lot of interest for digital applications. Using a self-consistent tight binding theory, it is found that, inspite of this bandgap opening, the intrinsic bias dependent electronic structure and the screening effect limit the subthreshold slope of a metal source drain bilayer grapheme transistor at a relatively higher value-much above the Boltzmann limit. This in turn reduces the on-off ratio of the transistor significantly. To overcome this poor on-off ratio problem, a semiconductor source-drain structure has been proposed, where the minority carrier injection from the drain is largely switched off due to the bandgap of the drain. Using a self-consistent Non-Equilibrium Green’s Function(NEGF) approach, the proposed device is found to be extremely promising providing unipolar grapheme devices with large on-off ratio, improved subthreshold slope and better current saturation. At high drain bias, the transport properties of grapheme is extremely intriguing with a number of nontrivial effects. Optical phonons in monolayer grapheme couple with carriers in a much stronger way as compared to a bilayer due to selection rules. However, it is difficult to experimentally probe this through transport measurements in substrate supported grapheme as the surface polar phonons with typical low activation energy dominates the total scattering. However, at large drain field, the carriers obtain sufficient energy to interact with the optical phonons, and create so called ‘hot phonons’ which we have experimentally found to result in a negative differential conductance(NDC). The magnitude of this NDC is found to be much stronger in monolayer than in bilayer, which agrees with theoretical calculations. This NDC has also been shown to be compensated by extra minority carrier injection from drain at large bias resulting in an excellent current saturation through a fundamentally different mechanism as compared to velocity saturation. A transport model has been proposed based on the theory, and the experimental observations are found to be in agreement with the model.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Majumdar, Kausik. "Device Structure And Material Exploration For Nanoscale Transistor." Thesis, 2011. http://etd.iisc.ernet.in/handle/2005/2097.

Повний текст джерела
Анотація:
There is a compelling need to explore different material options as well as device structures to facilitate smooth transistor scaling for higher speed, higher density and lower power. The enormous potential of nanoelectronics, and nanotechnology in general, offers us the possibility of designing devices with added functionality. However, at the same time, the new materials come with their own challenges that need to be overcome. In this work, we have addressed some of these challenges in the context of quasi-2D Silicon, III-V semiconductor and graphene. Bulk Si is the most widely used semiconductor with an indirect bandgap of about 1.1 eV. However, when Si is thinned down to sub-10nm regime, the quasi-2D nature of the system changes the electronic properties of the material significantly due to the strong geometrical confinement. Using a tight-binding study, we show that in addition to the increase in bandgap due to quantization, it is possible to transform the original in direct bandgap to a direct one. The effective masses at different valleys are also shown to vary uniquely in an anisotropic way. This ultra-thin Si, when used as a channel in a double gate MOSFET structure, creates so called “volume in version” which is extensively investigated in this work. It has been found that the both the quantum confinement as well as the gating effect play a significant role in determining the spatial distribution of the charge, which in turn has an important role in the characteristics of transistor. Compound III-V semiconductors, like Inx Ga1-xAs, provide low effective mass and low density of states. This, when coupled with strong confinement in a nanowire channel transistor, leads to the “Ultimate Quantum Capacitance Limit” (UQCL) regime of operation, where only the lowest subband is occupied. In this regime, the channel capacitance is much smaller than the oxide capacitance and hence dominates in the total gate capacitance. It is found that the gate capacitance change qualitatively in the UQCL regime, allowing multi-peak, non-monotonic capacitance-voltage characteristics. It is also shown that in an ideal condition, UQCL provides improved current saturation, on-off ratio and energy-delay product, but a degraded intrinsic gate delay. UQCL shows better immunity towards series resistance effect due to increased channel resistance, but is more prone to interfacial traps. A careful design can provide a better on-off ratio at a given gate delay in UQCL compared to conventional MOSFET scenario. To achieve the full advantages of both FinFET and HEMT in III-V domain, a hybrid structure, called “HFinFET” is proposed which provides excellent on performance like HEMT with good gate control like FinFET. During on state, the carriers in the channel are provided using a delta-doped layer(like HEMT) from the top of a fin-like non-planar channel, and during off state, the gates along the side of the fin(like FinFET) help to pull-off the carriers from the channel. Using an effective mass based coupled Poisson-Schrodinger simulation, the proposed structure is found to outperform the state of the art planar and non-planar MOSFETs. By careful optimization of the gate to source-drain underlap, it is shown that the design window of the device can be increased to meet ITRS projections at similar gate length. In addition, the performance degradation of HFinFET in presence of interface traps has been found to be significantly mitigated by tuning the underlap parameter. Graphene is a popular 2D hexagonal carbon crystal with extraordinary electronic, mechani-cal and chemical properties. However, the zero band gap of grapheme has limited its application in digital electronics. One could create a bandgap in grapheme by making quasi-1D strips, called nanoribbon. However, the bandgap of these nanoribbons depends on the the type of the edge, depending on which, one can obtain either semiconducting or metallic nanoribbon. It has been shown that by the application of an external transverse field along the sides of a nanoribbon, one could not only modulate the magnitude of the bandgap, but also change it from direct to indirect. This could open up interesting possibilities for novel electronic and optoelectronic applications. The asymmetric potential distribution inside the nanoribbon is found to result in such direct to indirect bandgap transition. The corresponding carrier masses are also found to be modulated by the external field, following a transition from a“slow”electron to a“fast” electron and vice-versa. Experimentally, it is difficult to control the bandgap in nanoribbons as precise edge control at nanometer scale is nontrivial. One could also open a bandgap in a bilayer graphene, by the application of vertical electric field, which has raised a lot of interest for digital applications. Using a self-consistent tight binding theory, it is found that, inspite of this bandgap opening, the intrinsic bias dependent electronic structure and the screening effect limit the subthreshold slope of a metal source drain bilayer grapheme transistor at a relatively higher value-much above the Boltzmann limit. This in turn reduces the on-off ratio of the transistor significantly. To overcome this poor on-off ratio problem, a semiconductor source-drain structure has been proposed, where the minority carrier injection from the drain is largely switched off due to the bandgap of the drain. Using a self-consistent Non-Equilibrium Green’s Function(NEGF) approach, the proposed device is found to be extremely promising providing unipolar grapheme devices with large on-off ratio, improved subthreshold slope and better current saturation. At high drain bias, the transport properties of grapheme is extremely intriguing with a number of nontrivial effects. Optical phonons in monolayer grapheme couple with carriers in a much stronger way as compared to a bilayer due to selection rules. However, it is difficult to experimentally probe this through transport measurements in substrate supported grapheme as the surface polar phonons with typical low activation energy dominates the total scattering. However, at large drain field, the carriers obtain sufficient energy to interact with the optical phonons, and create so called ‘hot phonons’ which we have experimentally found to result in a negative differential conductance(NDC). The magnitude of this NDC is found to be much stronger in monolayer than in bilayer, which agrees with theoretical calculations. This NDC has also been shown to be compensated by extra minority carrier injection from drain at large bias resulting in an excellent current saturation through a fundamentally different mechanism as compared to velocity saturation. A transport model has been proposed based on the theory, and the experimental observations are found to be in agreement with the model.
Стилі APA, Harvard, Vancouver, ISO та ін.

Книги з теми "Quantum double model"

1

My Double Unveiled: The Dissipative Quantum Model of Brain (Advances in Consciousness Research). John Benjamins Publishing Co, 2001.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Dyall, Kenneth G., and Knut Faegri. Introduction to Relativistic Quantum Chemistry. Oxford University Press, 2007. http://dx.doi.org/10.1093/oso/9780195140866.001.0001.

Повний текст джерела
Анотація:
This book provides an introduction to the essentials of relativistic effects in quantum chemistry, and a reference work that collects all the major developments in this field. It is designed for the graduate student and the computational chemist with a good background in nonrelativistic theory. In addition to explaining the necessary theory in detail, at a level that the non-expert and the student should readily be able to follow, the book discusses the implementation of the theory and practicalities of its use in calculations. After a brief introduction to classical relativity and electromagnetism, the Dirac equation is presented, and its symmetry, atomic solutions, and interpretation are explored. Four-component molecular methods are then developed: self-consistent field theory and the use of basis sets, double-group and time-reversal symmetry, correlation methods, molecular properties, and an overview of relativistic density functional theory. The emphases in this section are on the basics of relativistic theory and how relativistic theory differs from nonrelativistic theory. Approximate methods are treated next, starting with spin separation in the Dirac equation, and proceeding to the Foldy-Wouthuysen, Douglas-Kroll, and related transformations, Breit-Pauli and direct perturbation theory, regular approximations, matrix approximations, and pseudopotential and model potential methods. For each of these approximations, one-electron operators and many-electron methods are developed, spin-free and spin-orbit operators are presented, and the calculation of electric and magnetic properties is discussed. The treatment of spin-orbit effects with correlation rounds off the presentation of approximate methods. The book concludes with a discussion of the qualitative changes in the picture of structure and bonding that arise from the inclusion of relativity.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Tanasa, Adrian. Combinatorial Physics. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780192895493.001.0001.

Повний текст джерела
Анотація:
After briefly presenting (for the physicist) some notions frequently used in combinatorics (such as graphs or combinatorial maps) and after briefly presenting (for the combinatorialist) the main concepts of quantum field theory (QFT), the book shows how algebraic combinatorics can be used to deal with perturbative renormalisation (both in commutative and non-commutative quantum field theory), how analytic combinatorics can be used for QFT issues (again, for both commutative and non-commutative QFT), how Grassmann integrals (frequently used in QFT) can be used to proCve new combinatorial identities (generalizing the Lindström–Gessel–Viennot formula), how combinatorial QFT can bring a new insight on the celebrated Jacobian conjecture (which concerns global invertibility of polynomial systems) and so on. In the second part of the book, matrix models, and tensor models are presented to the reader as QFT models. Several tensor model results (such as the implementation of the large N limit and of the double-scaling limit for various such tensor models, N being here the size of the tensor) are then exposed. These results are natural generalizations of results extensively used by theoretical physicists in the study of matrix models and they are obtained through intensive use of combinatorial techniques (this time mainly enumerative techniques). The last part of the book is dedicated to the recently discovered relation between tensor models and the holographic Sachdev–Ye–Kitaev model, model which has been extensively studied in the last years by condensed matter and by high-energy physicists.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Stuewer, Roger H. The Quantum-Mechanical Nucleus. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198827870.003.0005.

Повний текст джерела
Анотація:
Rutherford extended his satellite model to encompass an explanation of the alpha decay of radioactive nuclei, which was abruptly disproven in the summer of 1928 by Russian theoretical physicist George Gamow, while visiting Max Born’s institute in Göttingen, and simultaneously by English theoretical physicist Ronald Gurney and American theoretical physicist Edward Condon at Princeton University, who showed that alpha decay is a quantum-mechanical tunneling phenomenon. That December, Gamow, now in Bohr’s institute in Copenhagen, also conceived the liquid-drop model of the nucleus, which he presented in January 1929 at a meeting of the Royal Society in London, and which he discussed that April at the first of Bohr’s annual conferences in Copenhagen. He developed that model further in the 1929–30 academic year at the Cavendish and in the 1930–1 academic year in Copenhagen, where he also wrote the first monograph on theoretical nuclear physics in which he cleverly expressed his doubt that electrons are present in nuclei.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Vigdor, Steven E. Trinity. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198814825.003.0003.

Повний текст джерела
Анотація:
Chapter 3 explains evidence for three generations of quarks and leptons, as needed to provide natural means for standard model CP violation. It describes the cross-generational mixing of quarks and of neutrinos of different flavor, and the matrices that characterize the mixing. CP violation from quark mixing is well measured but insufficient to explain the universe’s matter–antimatter imbalance, while CP violation in neutrino mixing is the subject of ongoing searches. Discoveries revealing and quantifying flavor oscillations among neutrinos from the sun and the atmosphere are reviewed. In describing attempts to understand the lightness and nature of neutrinos—whether they are Majorana neutrinos that are their own antiparticles—the chapter introduces the concept of chirality and searches for neutrinoless double beta decay. It also notes the strong CP problem, wherein nature maintains CP symmetry in interactions among the three quark colors even though quantum chromodynamics allows for sizable violations.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Launay, Jean-Pierre, and Michel Verdaguer. The moving electron: electrical properties. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198814597.003.0003.

Повний текст джерела
Анотація:
The three basic parameters controlling electron transfer are presented: electronic interaction, structural change and interelectronic repulsion. Then electron transfer in discrete molecular systems is considered, with cases of inter- and intramolecular transfers. The semi-classical (Marcus—Hush) and quantum models are developed, and the properties of mixed valence systems are described. Double exchange in magnetic mixed valence entities is introduced. Biological electron transfer in proteins is briefly presented. The conductivity in extended molecular solids (in particular organic conductors) is tackled starting from band theory, with examples such as KCP, polyacetylene and TTF-TCNQ. It is shown that electron–phonon interaction can change the geometrical structure and alter conductivity through Peierls distortion. Another important effect occurs in narrow-band systems where the interelectronic repulsion plays a leading role, for instance in Mott insulators.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Morawetz, Klaus. Transient Time Period. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.003.0019.

Повний текст джерела
Анотація:
The formation of correlations at short- time scales is considered. A universal response function is found which allows describing the formation of collective modes in plasmas created by femto-second lasers as well as the formation of occupations in cold atomic optical lattices. Quantum quench and sudden switching of interactions are possible to describe by such Levinson-type kinetic equations on the transient time regime. On larger time scales it is shown that non-Markovian–Levnson equations double count correlations and the extended quasiparticle picture to distinguish between the reduced density matrix and quasiparticle distribution solve this shortcoming. The problem of initial correlations and how they can be incorporated into the Green’s function technique to result into modified kinetic equations is solved and a systematic expansion is suggested.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Mathematical foundations of quantum field theory and perturbative string theory. Providence, R.I: American Mathematical Society, 2011.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Quantum double model"

1

Martín, Laura Ortiz. "Double Semion Model as a Quantum Memory." In Springer Theses, 49–68. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-23649-6_4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Prasad, G. Bhanu. "A Double Resonance Model for Lasers Without Inversion." In Recent Developments in Quantum Optics, 479–84. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2936-1_57.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Ghatak, Ajoy, and S. Lokanathan. "The Double Well Potential and the Krönig-Penney Model." In Quantum Mechanics: Theory and Applications, 401–22. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2130-5_16.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Naaijkens, Pieter. "Kitaev’s Quantum Double Model from a Local Quantum Physics Point of View." In Advances in Algebraic Quantum Field Theory, 365–95. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-21353-8_9.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Sacchetti, Andrea. "Double-Barrier Resonances and Time Decay of the Survival Probability: A Toy Model." In Advances in Quantum Mechanics, 283–93. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-58904-6_17.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Xie, Zhaoqing, Qing Liu, and Lanqing Xu. "A New Quantum-Behaved PSO: Based on Double δ-Potential Wells Model." In Proceedings of 2016 Chinese Intelligent Systems Conference, 211–19. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-2338-5_21.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Iñarrea, Jesús, Gloria Platero, and Allan H. MacDonald. "Microscopical Model for Hyperfine Interaction in Electronic Transport Through Double Quantum Dots: Spin Blockade Lifting." In Progress in Industrial Mathematics at ECMI 2006, 440–43. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-71992-2_66.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Kawamura, T., H. A. Fertig, and J. P. Leburton. "Quantum Transport through One- Dimensional Double-Quantum-Well Systems." In Physical Models for Quantum Wires, Nanotubes, and Nanoribbons, 509–20. New York: Jenny Stanford Publishing, 2023. http://dx.doi.org/10.1201/9781003219378-39.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Fonseca, L. R. C., J. L. Jimenez, and J. P. Leburton. "Electronic Coupling in InAs/GaAs Self-Assembled Stacked Double Quantum Dot Systems." In Physical Models for Quantum Dots, 589–605. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-36.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Zhang, L. X., D. V. Melnikov, and J. P. Leburton. "Non-monotonic Variation of the Exchange Energy in Double Elliptic Quantum Dots." In Physical Models for Quantum Dots, 321–36. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-20.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Quantum double model"

1

Flågan, Sigurd, Patrick Maletinsky, Richard J. Warburton, and Daniel Riedel. "Microcavity Platform for Widely Tunable Optical Double Resonance." In Quantum 2.0, QTh2C.2. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/quantum.2024.qth2c.2.

Повний текст джерела
Анотація:
We present in situ tuning of both the absolute and relative frequency spacing of resonant modes in an optical microcavity by incorporating a wedged diamond membrane. We demonstrate THz continuous tuning of doubly-resonant Raman scattering.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Deshler, Nico, Itay Ozer, Amit Ashok, and Saikat Guha. "Experimental Demonstration of a Quantum-Optimal Direct Imaging Coronagraph." In Computational Optical Sensing and Imaging, CF1B.3. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cosi.2024.cf1b.3.

Повний текст джерела
Анотація:
We implement a direct imaging coronagraph that rejects all light from an on-axis star using a double-pass spatial mode sorter. Our experimental setup can precisely localize exoplanets below the diffraction limit at 1000:1 star-planet contrast.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Sabbagh, M. El, W. Fikry, and O. A. Omar. "Quantum compact model for ballistic double gate MOSFETs." In Technology of Integrated Systems in Nanoscal Era (DTIS). IEEE, 2009. http://dx.doi.org/10.1109/dtis.2009.4938043.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Lin, Chung-hsun, Mohan Dunga, Ali Niknejad, and Chenming Hu. "A Compact Quantum-Mechanical Model for Double-Gate MOSFET." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306111.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Heydari, Hoshang. "Entanglement dynamics of double Jaynes-Cummings interaction model based on geometric invariants." In QUANTUM THEORY: RECONSIDERATION OF FOUNDATIONS 6. AIP, 2012. http://dx.doi.org/10.1063/1.4773154.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Kostov, Ivan, Vladimir Kazakov, and D. Kutasov. "Matrix model of the (1+1) dimensional dilatonic black hole in the double scaling limit." In Non-perturbative Quantum Effects 2000. Trieste, Italy: Sissa Medialab, 2000. http://dx.doi.org/10.22323/1.006.0026.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Gao, D. S., A. T. Yang, S. M. Kang, R. P. Bryan, M. E. Givens, and J. J. Coleman. "A Quantum-Well Laser Model for Circuit Simulation." In Numerical Simulation and Analysis in Guided-Wave Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/gwoe.1989.sa5.

Повний текст джерела
Анотація:
Circuit simulation models for optical devices are much needed to analyze optical interconnects and properties of optoelectronic integrated circuits. [1] The issue of modeling semiconductor lasers has been addressed by several authors. Previously reported laser models have been mainly for conventional double heterostructure lasers. [2,3,4] However, few adequate models exist for quantum-well lasers. In fact, previous laser models developed for particular device design often fail when the device parameters are changed.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Ciprian, Dalibor, and Petr Hlubina. "Model of a double-sided surface plasmon resonance fiber-optic sensor." In XIX Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, edited by Agnieszka Popiolek-Masajada and Waclaw Urbanczyk. SPIE, 2014. http://dx.doi.org/10.1117/12.2176037.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Jingbo, Duan. "Big Data Classification Model and Algorithm Based on Double Quantum Particle Swarm Optimization." In 2023 IEEE International Conference on Control, Electronics and Computer Technology (ICCECT). IEEE, 2023. http://dx.doi.org/10.1109/iccect57938.2023.10140247.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Medury, AdityaSankar, Kausik Majumdar, Navakanta Bhat, and K. N. Bhat. "A compact model incorporating quantum effects for ultra-thin-body Double-Gate MOSFETs." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424996.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "Quantum double model" для конкретних типів джерел:
Статті в журналах
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії