Статті в журналах з теми "Quantum Dots - SiOx Matrix"
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Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.
Повний текст джерелаZhang, X. H., Soo Jin Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, S. F. Yu, and X. W. Sun. "Fabrication and Optical Properties of ZnO Quantum Dots." Advanced Materials Research 31 (November 2007): 71–73. http://dx.doi.org/10.4028/www.scientific.net/amr.31.71.
Повний текст джерелаYazicioglu, Deniz, Sebastian Gutsch, and Margit Zacharias. "(Invited) Size Controlled Silicon Quantum Dots: Understanding Basic Properties and Electronic Applications." ECS Meeting Abstracts MA2022-01, no. 20 (July 7, 2022): 1077. http://dx.doi.org/10.1149/ma2022-01201077mtgabs.
Повний текст джерелаZhang, X. H., S. J. Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, and S. F. Yu. "Exciton radiative lifetime in ZnO quantum dots embedded in SiOx matrix." Applied Physics Letters 88, no. 22 (May 29, 2006): 221903. http://dx.doi.org/10.1063/1.2207848.
Повний текст джерелаHuang, Jie, Jian Liang Jiang, and Abdelkader Sabeur. "Application of Finite Difference Method in Modeling Quantum Dot Superlattice Silicon Tandem Solar Cell." Advanced Materials Research 898 (February 2014): 249–52. http://dx.doi.org/10.4028/www.scientific.net/amr.898.249.
Повний текст джерелаKuryliuk, Vasyl, Andriy Nadtochiy, Oleg Korotchenkov, Chin-Chi Wang, and Pei-Wen Li. "A model for predicting the thermal conductivity of SiO2–Ge nanoparticle composites." Physical Chemistry Chemical Physics 17, no. 20 (2015): 13429–41. http://dx.doi.org/10.1039/c5cp00129c.
Повний текст джерелаYi, Dong Kee. "Synthesis and Applications of Crack-Free SiO2 Monolith Containing CdSe/ZnS Quantum Dots as Passive Lighting Sources." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4538–42. http://dx.doi.org/10.1166/jnn.2008.ic46.
Повний текст джерелаSamanta, Arup, and Debajyoti Das. "Effect of RF power on the formation and size evolution of nC-Si quantum dots in an amorphous SiOx matrix." Journal of Materials Chemistry 21, no. 20 (2011): 7452. http://dx.doi.org/10.1039/c1jm10443h.
Повний текст джерелаXu, C. S., Y. C. Liu, R. Mu, C. Muntele, and D. Ila. "Structural and optical properties of GaAs quantum dots formed in SiO2 matrix." Materials Letters 61, no. 14-15 (June 2007): 2875–78. http://dx.doi.org/10.1016/j.matlet.2007.01.073.
Повний текст джерелаSlunjski, R., P. Dubček, N. Radić, S. Bernstorff, and B. Pivac. "Structure and transport properties of Ge quantum dots in a SiO2 matrix." Journal of Physics D: Applied Physics 48, no. 23 (May 14, 2015): 235301. http://dx.doi.org/10.1088/0022-3727/48/23/235301.
Повний текст джерелаPark, Youngbin, Shinho Kim, Jihyun Moon, Jung Chul Lee, and Yangdo Kim. "Investigation of Bonding Characteristics Between Si Quantum Dots and a SiO2 Matrix." Journal of Nanoscience and Nanotechnology 12, no. 2 (February 1, 2012): 1444–47. http://dx.doi.org/10.1166/jnn.2012.4676.
Повний текст джерелаPANCHAL, A. K., D. K. RAI, M. MATHEW, and C. S. SOLANKI. "SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW." Nano 04, no. 05 (October 2009): 265–79. http://dx.doi.org/10.1142/s1793292009001770.
Повний текст джерелаChakdar, Dipankar, Abubakkar Siddik, Nikita Ghosh, Gautam Gope, and Prabir Kumar Haldar. "Enhancement of Luminescence Behaviour of Colloidal ZnO Quantum Dots Coated with SiO2 Irradiated by Ni+7 Ion." Advanced Science, Engineering and Medicine 12, no. 2 (February 1, 2020): 278–83. http://dx.doi.org/10.1166/asem.2020.2497.
Повний текст джерелаTong, Wanzhe, Dong Fang, Chongxi Bao, Songlin Tan, Yichun Liu, Fengxian Li, Xin You, et al. "Enhancing mechanical properties of copper matrix composite by adding SiO2 quantum dots reinforcement." Vacuum 195 (January 2022): 110682. http://dx.doi.org/10.1016/j.vacuum.2021.110682.
Повний текст джерелаAliberti, P., S. K. Shrestha, R. Teuscher, B. Zhang, M. A. Green, and G. J. Conibeer. "Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications." Solar Energy Materials and Solar Cells 94, no. 11 (November 2010): 1936–41. http://dx.doi.org/10.1016/j.solmat.2010.06.024.
Повний текст джерелаMaikhuri, Deepti, S. P. Purohit, and K. C. Mathur. "Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix." AIP Advances 2, no. 1 (March 2012): 012160. http://dx.doi.org/10.1063/1.3693405.
Повний текст джерелаPanigrahi, Shrabani, Ashok Bera, and Durga Basak. "Ordered dispersion of ZnO quantum dots in SiO2 matrix and its strong emission properties." Journal of Colloid and Interface Science 353, no. 1 (January 2011): 30–38. http://dx.doi.org/10.1016/j.jcis.2010.09.055.
Повний текст джерелаSharma, Prashant K., Ranu K. Dutta, Manvendra Kumar, Prashant K. Singh, and Avinash C. Pandey. "Luminescence studies and formation mechanism of symmetrically dispersed ZnO quantum dots embedded in SiO2 matrix." Journal of Luminescence 129, no. 6 (June 2009): 605–10. http://dx.doi.org/10.1016/j.jlumin.2009.01.004.
Повний текст джерелаTsang, W. M., V. Stolojan, B. J. Sealy, S. P. Wong, and S. R. P. Silva. "Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation." Ultramicroscopy 107, no. 9 (September 2007): 819–24. http://dx.doi.org/10.1016/j.ultramic.2007.02.013.
Повний текст джерелаKnaup, Jan M., Márton Vörös, Peter Déak, Adam Gali, Thomas Frauenheim, and Efthimios Kaxiras. "Annealing simulations to determine the matrix interface structure of SiC quantum dots embedded in SiO2." physica status solidi (c) 7, no. 2 (February 2010): 407–10. http://dx.doi.org/10.1002/pssc.200982428.
Повний текст джерелаChu, Tien Dung, та Hoang Nam Nguyen. "Synthesis and Characteristics of Multifunctional Magneto-luminescent Nanoparticles by an Ultrasonic Wave-assisted Stӧber Method". Journal of Physical Science 32, № 3 (25 листопада 2021): 75–87. http://dx.doi.org/10.21315/jps2021.32.3.6.
Повний текст джерелаChen, Xiaobo, and Peizhi Yang. "Preparation of B-doped Si quantum dots embedded in SiNx films for Si quantum dot solar cells." International Journal of Modern Physics B 32, no. 02 (January 16, 2018): 1850003. http://dx.doi.org/10.1142/s0217979218500030.
Повний текст джерелаZatsepin, A. F., and D. Yu Biryukov. "Temperature dependence of photoluminescence of semiconductor quantum dots upon indirect excitation in a SiO2 dielectric matrix." Physics of the Solid State 57, no. 8 (August 2015): 1601–6. http://dx.doi.org/10.1134/s1063783415080363.
Повний текст джерелаVörös, Márton, Adam Gali, Efthimios Kaxiras, Thomas Frauenheim, and Jan M. Knaup. "Identification of defects at the interface between 3C-SiC quantum dots and a SiO2 embedding matrix." physica status solidi (b) 249, no. 2 (December 23, 2011): 360–67. http://dx.doi.org/10.1002/pssb.201100527.
Повний текст джерелаNicoara, Adrian Ionut, Mihai Eftimie, Mihail Elisa, Ileana Cristina Vasiliu, Cristina Bartha, Monica Enculescu, Mihaela Filipescu, et al. "Nanostructured PbS-Doped Inorganic Film Synthesized by Sol-Gel Route." Nanomaterials 12, no. 17 (August 30, 2022): 3006. http://dx.doi.org/10.3390/nano12173006.
Повний текст джерелаMangold, H. Moritz, Helmut Karl, and Hubert J. Krenner. "Site-Selective Ion Beam Synthesis and Optical Properties of Individual CdSe Nanocrystal Quantum Dots in a SiO2 Matrix." ACS Applied Materials & Interfaces 6, no. 3 (January 27, 2014): 1339–44. http://dx.doi.org/10.1021/am404227x.
Повний текст джерелаDi, D., I. Perez-Wurfl, G. Conibeer, and M. A. Green. "Formation and photoluminescence of Si quantum dots in SiO2/Si3N4 hybrid matrix for all-Si tandem solar cells." Solar Energy Materials and Solar Cells 94, no. 12 (December 2010): 2238–43. http://dx.doi.org/10.1016/j.solmat.2010.07.018.
Повний текст джерелаPodkolodnaya, Yuliya A., Alina A. Kokorina, Tatiana S. Ponomaryova, Olga A. Goryacheva, Daniil D. Drozd, Mikhail S. Khitrov, Lingting Huang, Zhichao Yu, Dianping Tang, and Irina Yu Goryacheva. "Luminescent Composite Carbon/SiO2 Structures: Synthesis and Applications." Biosensors 12, no. 6 (June 6, 2022): 392. http://dx.doi.org/10.3390/bios12060392.
Повний текст джерелаMikhaylov, A. N., D. I. Tetelbaum, V. A. Burdov, O. N. Gorshkov, A. I. Belov, D. A. Kambarov, V. A. Belyakov, V. K. Vasiliev, A. I. Kovalev, and D. M. Gaponova. "Effect of Ion Doping with Donor and Acceptor Impurities on Intensity and Lifetime of Photoluminescence from SiO2 Films with Silicon Quantum Dots." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 780–88. http://dx.doi.org/10.1166/jnn.2008.a067.
Повний текст джерелаDallali, Lobna, Sihem Jaziri, Jamal el Haskouri, Pedro Amorós, and Juan Martínez-Pastor. "Energy of excitons and acceptor–exciton complexes to explain the origin of ultraviolet photoluminescence in ZnO quantum dots embedded in a SiO2 matrix." Solid State Communications 151, no. 11 (June 2011): 822–25. http://dx.doi.org/10.1016/j.ssc.2011.03.024.
Повний текст джерелаLingalugari, Murali, Evan Heller, Barath Parthasarathy, John Chandy, and Faquir Jain. "Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840006. http://dx.doi.org/10.1142/s0129156418400062.
Повний текст джерелаMakaino, Akinori, Yuta Tanaka, and Koichi Yamaguchi. "Molecular beam deposition of high-density InAs quantum dots on SiOx films." Japanese Journal of Applied Physics 58, SD (May 16, 2019): SDDF07. http://dx.doi.org/10.7567/1347-4065/ab0def.
Повний текст джерелаBaran, M., L. Khomenkova, N. Korsunska, T. Stara, M. Sheinkman, Y. Goldstein, J. Jedrzejewski, and E. Savir. "Investigation of aging process of Si–SiOx structures with silicon quantum dots." Journal of Applied Physics 98, no. 11 (December 2005): 113515. http://dx.doi.org/10.1063/1.2134887.
Повний текст джерелаDas, Debajyoti, and Arup Samanta. "Size effect on electronic transport in nC–Si/SiOx core/shell quantum dots." Materials Research Bulletin 47, no. 11 (November 2012): 3625–29. http://dx.doi.org/10.1016/j.materresbull.2012.06.051.
Повний текст джерелаKumar, Sandeep, and Laxmi Kishore Sagar. "CdSe quantum dots in a columnar matrix." Chemical Communications 47, no. 44 (2011): 12182. http://dx.doi.org/10.1039/c1cc15633k.
Повний текст джерелаSonawane, R. S., S. D. Naik, S. K. Apte, M. V. Kulkarni, and B. B. Kale. "CdS/CdSSe quantum dots in glass matrix." Bulletin of Materials Science 31, no. 3 (June 2008): 495–99. http://dx.doi.org/10.1007/s12034-008-0077-2.
Повний текст джерелаKondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate." MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.
Повний текст джерелаKhan, Madihah, Alyxandra Thiessen, I. Teng Cheong, Sarah Milliken, and Jonathan G. C. Veinot. "Investigation of Silicon Nanoparticle-Polystyrene Hybrids." Alberta Academic Review 2, no. 2 (September 15, 2019): 49–50. http://dx.doi.org/10.29173/aar60.
Повний текст джерелаDing, Kaining, Urs Aeberhard, Oleksandr Astakhov, Uwe Breuer, Maryam Beigmohamadi, Stephan Suckow, Birger Berghoff, et al. "Defect passivation by hydrogen reincorporation for silicon quantum dots in SiC/SiOx hetero-superlattice." Journal of Non-Crystalline Solids 358, no. 17 (September 2012): 2145–49. http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.092.
Повний текст джерелаLuna-López, José Alberto, G. Garcia-Salgado, J. Carrillo-López, Dianeli E. Vázquez-Valerdi, A. Ponce-Pedraza, T. Díaz-Becerril, F. J. Flores Gracia, and A. Morales-Sánchez. "Si Nanocrystals Deposited by HFCVD." Solid State Phenomena 194 (November 2012): 204–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.194.204.
Повний текст джерелаSalata, O. V., P. J. Dobson, P. J. Hull, and J. L. Hutchison. "Uniform GaAs quantum dots in a polymer matrix." Applied Physics Letters 65, no. 2 (July 11, 1994): 189–91. http://dx.doi.org/10.1063/1.112667.
Повний текст джерелаAl-Nashy, B., and Amin H. Al-Khursan. "Completely inhomogeneous density-matrix theory for quantum-dots." Optical and Quantum Electronics 41, no. 14-15 (December 2009): 989–95. http://dx.doi.org/10.1007/s11082-010-9411-1.
Повний текст джерелаRee, D. D., V. G. Mansurov, and K. S. Zhuravlev. "Photoluminescence of GaN quantum dots in AlN matrix." Microelectronic Engineering 81, no. 2-4 (August 2005): 251–54. http://dx.doi.org/10.1016/j.mee.2005.03.015.
Повний текст джерелаJain, F., R. H. Gudlavalleti, R. Mays, B. Saman, J. Chandy, and E. Heller. "Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic." International Journal of High Speed Electronics and Systems 29, no. 01n04 (March 2020): 2040017. http://dx.doi.org/10.1142/s0129156420400170.
Повний текст джерелаVERMA, ABHISHEK, P. K. PANDEY, J. KUMAR, S. NAGPAL, P. K. BHATNAGAR, and P. C. MATHUR. "GROWTH DYNAMICS OF II–VI COMPOUND SEMICONDUCTOR QUANTUM DOTS EMBEDDED IN BOROSILICATE GLASS MATRIX." International Journal of Nanoscience 07, no. 02n03 (April 2008): 151–60. http://dx.doi.org/10.1142/s0219581x08005250.
Повний текст джерелаMa, Jun, Yujie Yuan, and Ping Sun. "Approaching 23% silicon heterojunction solar cells with dual-functional SiOx/MoS2 quantum dots interface layers." Solar Energy Materials and Solar Cells 227 (August 2021): 111110. http://dx.doi.org/10.1016/j.solmat.2021.111110.
Повний текст джерелаDan’ko, V. A., S. O. Zlobin, I. Z. Indutnyi, I. P. Lisovskyy, V. G. Litovchenko, K. V. Michailovska, P. E. Shepeliavyi, and E. V. Begun. "PROPERTIES OF SI QUANTUM DOTS/SIOX POROUS FILM STRUC- TURES SYNTHESIZED USING THE HYDROFLUORIC TECHNOLOGY." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, no. 4 (March 16, 2015): 52. http://dx.doi.org/10.17073/1609-3577-2013-4-52-57.
Повний текст джерелаRUFO, SALVADOR, MITRA DUTTA, and MICHAEL A. STROSCIO. "THE INFLUENCE OF ENVIRONMENTAL EFFECTS ON THE ACOUSTIC PHONON SPECTRA IN QUANTUM-DOT HETEROSTRUCTURES." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 1147–58. http://dx.doi.org/10.1142/s0129156402001964.
Повний текст джерелаMASUMOTO, YASUAKI. "PERSISTENT SPECTRAL HOLE-BURNING IN SEMICONDUCTOR QUANTUM DOTS." Surface Review and Letters 03, no. 01 (February 1996): 143–50. http://dx.doi.org/10.1142/s0218625x96000292.
Повний текст джерелаZhang, Jian, and Jia Wei Sheng. "Copper Quantum Dots Formation in a Borosilicate Glass." Journal of Nano Research 32 (May 2015): 66–70. http://dx.doi.org/10.4028/www.scientific.net/jnanor.32.66.
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