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Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Quantum Dots - SiOx Matrix"

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Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.

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Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.
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2

Zhang, X. H., Soo Jin Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, S. F. Yu, and X. W. Sun. "Fabrication and Optical Properties of ZnO Quantum Dots." Advanced Materials Research 31 (November 2007): 71–73. http://dx.doi.org/10.4028/www.scientific.net/amr.31.71.

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Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and timeintegrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.
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3

Yazicioglu, Deniz, Sebastian Gutsch, and Margit Zacharias. "(Invited) Size Controlled Silicon Quantum Dots: Understanding Basic Properties and Electronic Applications." ECS Meeting Abstracts MA2022-01, no. 20 (July 7, 2022): 1077. http://dx.doi.org/10.1149/ma2022-01201077mtgabs.

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The fabrication of SiOx/SiO2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots. The layered-arranged Si quantum dots represent a model system to systematically study the photonic and electronic properties of indirect gap quantum dots prepared in a CMOS compatible way. Hence, the model system is used to understand the interplay of absorption and recombination, the carrier kinetics and the electronic transport properties for matrix embedded Si quantum dots. The interplay of radiative and non-radiative recombination will be discussed for high quantum yield. Doping of Si quantum dots and the respective quantification is at the limit of the respective high resolution techniques but clearly show the effect of self-purification. The effect of an externally applied electric field on exciton separation and carrier transport will be discussed..
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4

Zhang, X. H., S. J. Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, and S. F. Yu. "Exciton radiative lifetime in ZnO quantum dots embedded in SiOx matrix." Applied Physics Letters 88, no. 22 (May 29, 2006): 221903. http://dx.doi.org/10.1063/1.2207848.

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5

Huang, Jie, Jian Liang Jiang, and Abdelkader Sabeur. "Application of Finite Difference Method in Modeling Quantum Dot Superlattice Silicon Tandem Solar Cell." Advanced Materials Research 898 (February 2014): 249–52. http://dx.doi.org/10.4028/www.scientific.net/amr.898.249.

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In this paper we propose an effective method to model quantum dot superlattice silicon tandem solar cell. The Schrödinger equation is solved through finite difference method (FDM) to calculate energy band of three-dimensional silicon quantum dots embedded in the matrix of SiO2 and Si3N4.We simulate the quantum dot superlattice as regularly spaced array of equally sized cubic dots in respective matrix. For simplicity, we consider only one period of the structure in calculation. From the result, the effects of matrix material, dot size and inter-dot distance on the bandgap are obtained.
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6

Kuryliuk, Vasyl, Andriy Nadtochiy, Oleg Korotchenkov, Chin-Chi Wang, and Pei-Wen Li. "A model for predicting the thermal conductivity of SiO2–Ge nanoparticle composites." Physical Chemistry Chemical Physics 17, no. 20 (2015): 13429–41. http://dx.doi.org/10.1039/c5cp00129c.

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A simple and time consuming theoretical model that predicts the thermal conductivity of SiO2 layers with embedded Ge quantum dots is proposed. It takes into account the structural relaxation in the SiO2 matrix, deviation in mass density of the dots compared to the surrounding matrix and strains associated with the dots.
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7

Yi, Dong Kee. "Synthesis and Applications of Crack-Free SiO2 Monolith Containing CdSe/ZnS Quantum Dots as Passive Lighting Sources." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4538–42. http://dx.doi.org/10.1166/jnn.2008.ic46.

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A reverse microemulsion technique has been used to synthesize quantum dot nanocomposites within a SiO2 surface coating. With this approach, the unique optical properties of the CdSe/ZnS quantum dots were preserved. CdSe/ZnS/SiO2 nanoparticles were homogeneously distributed in a tetramethyl orthosilicate ethanol solution and gelation process was initiated within a 10 min, and was left over night at room temperature and dried fully to achieve a solid SiO2 monolith. The resulting monolith was transparent and fluorescent under ultraviolet (UV) lamp. Moreover the monolith produced was crack-free. Further studies on the photo stability of the monolith were performed using a high power UV LED device. Remarkably, quantum dots in the SiO2 monolith showed better photo stability compared with those dispersed in a polymer matrix.
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8

Samanta, Arup, and Debajyoti Das. "Effect of RF power on the formation and size evolution of nC-Si quantum dots in an amorphous SiOx matrix." Journal of Materials Chemistry 21, no. 20 (2011): 7452. http://dx.doi.org/10.1039/c1jm10443h.

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9

Xu, C. S., Y. C. Liu, R. Mu, C. Muntele, and D. Ila. "Structural and optical properties of GaAs quantum dots formed in SiO2 matrix." Materials Letters 61, no. 14-15 (June 2007): 2875–78. http://dx.doi.org/10.1016/j.matlet.2007.01.073.

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Slunjski, R., P. Dubček, N. Radić, S. Bernstorff, and B. Pivac. "Structure and transport properties of Ge quantum dots in a SiO2 matrix." Journal of Physics D: Applied Physics 48, no. 23 (May 14, 2015): 235301. http://dx.doi.org/10.1088/0022-3727/48/23/235301.

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Дисертації з теми "Quantum Dots - SiOx Matrix"

1

Little, William Robert. "Structure of, and light emission in, matrix-free Germanium quantum dots." Thesis, Queen Mary, University of London, 2014. http://qmro.qmul.ac.uk/xmlui/handle/123456789/8954.

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The connection between light emission and structure of Germanium nanoparticles (3-10 nm) prepared by top-down (etching) and bottom-up (sol-gel and colloidal synthesis) has been investigated using Raman spectroscopy, TEM, x-ray absorption spectroscopy (XAS), x-ray di raction (XRD), and photoluminescence (PL). It was found that TEM, Raman spectroscopy, PL, and XRD techniques all result in di ering values for the nanoparticle size which don't all agree in the limit of experimental error. Several structural models have been proposed and tested by high pressure Raman measurements. It was found that a Raman peak corresponding to diamond-type Ge structure is observed well above the transition pressure of both amorphous ( six GPa) and crystalline ( 11 GPa) Ge. The pressure dependence of the Raman signal peak position was observed to follow an unexpected non-linear shift with a corresponding increase in peak width (FWHM). Possible structural origins of these trends have been investigated by adapting the widely used phonon con nement model to high pressure conditions and comparing experimental data with the model behaviour under assumptions of constant, and size-dependent bulk modulus. Considered collectively with the ambient structural data, the results of the analysis of the high pressure behaviour point to the phenomenon of gradual surface induced amorphisation under pressure in matrix-free Ge nanoparticles. The best structural model to describe this is a core-shell with the small crystalline core and a disordered surface layer. The local structure of samples was investigated using XAS, while opticallydetected XAS, using x-ray excited optical luminescence (XEOL), was used to link structure with optical emission. The emission was found to depend on surface termination; in oxygen terminated nanoparticles the oxide rich regions are responsi- 4 ble for light emission, while in their hydrogen terminated counterparts' pure Ge regions contribute to the luminescence. Furthermore, with the aid of molecular dynamics simulations it was shown that in hydrogen-terminated samples, optical emission is due to a topologically disordered (amorphous) region close to the surface of the nanoparticles. We demonstrated that OD-XAS can potentially provide subnanoparticle resolution due to its sensitivity to the light emitting sites in a sample. We further investigated the microscopic origins of such sensitivity and identi ed possible limitations. This work clearly demonstrates that a combination of methods sensitive to short-range and long-range structure are required for comprehensive characterisation of nanoscale systems.
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2

Okrepka, G. M. "Influence of the matrix on the photoluminescence propeties of quantum dots." Thesis, БДМУ, 2021. http://dspace.bsmu.edu.ua:8080/xmlui/handle/123456789/18527.

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Hussain, Laiq§. "Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52901.

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Materials for the generation and detection of long wavelength IR radiation continue to be of considerable interest for many applications such as night vision, defense and security, rescue, life sciences, industrial processing etc. For this purpose photodetection based on InSb is a well known technology in mid wavelength (3-5 μm) range. One of the ongoing projects in IMAGIC centre has been working on the development of technologies for the next generation long wavelength infrared (LWIR) photodetector focal plane arrays (FPAs) based on a ‘dot to bulk’ concept. A promising potential of this type photodetector exists to extend the detection wavelength to LWIR by using InSb QDs in InAs matrix, which also enable the device to operate at higher temperatures. Although, it is a novel and promising concept but still some challenges like optimization of material quality and device dark current etc are to be addressed. This project work has been focused on the optical and structural characterization of various size InSb QDs embedded in InAs matrix grown on InAs substrate by molecular beam epitaxy (MBE). The InSb QD’s base diameter, height and density have been revealed and evaluated by Atomic force microscopy (AFM) and transmission electron microscopy (TEM). Strong QDs related photoluminescence (PL) signals in IR range have been observed which can be attributed to interband transition between the InSb QDs (holes) and their InAs matrix (electrons). The absorption measurement results show that high absorbance is in the corresponding IR wavelength range which is in agreement with PL measurement results. The experimental results concluded from this work provide valuable information to optimize the InSb QDs materials for designing and fabricating desired LWIR photodetectors with low dark current and high photoresponsivity.
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4

Zell, Elizabeth T. "A Novel Synthesis and Characterization of Copper Chloride Nanocrystals in a Sodium Chloride Matrix." Youngstown State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1387281922.

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Ndangili, Peter Munyao. "Electrochemical and optical modulation of selenide and telluride ternary alloy quantum dots genosensors." Thesis, University of the Western Cape, 2012. http://hdl.handle.net/11394/4025.

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Philosophiae Doctor - PhD
Electroanalytical and optical properties of nanoscale materials are very important for biosensing applications as well as for understanding the unique one-dimensional carrier transport mechanism. One-dimensional semiconductor nanomaterials such as semiconductor quantum dots are extremely attractive for designing high-density protein arrays. Because of their high surfaceto-volume ratio, electro-catalytic activity as well as good biocompatibility and novel electron transport properties make them highly attractive materials for ultra-sensitive detection of biological macromolecules via bio-electronic or bio-optic devices. A genosensor or gene based biosensor is an analytical device that employs immobilized deoxyribonucleic acid (DNA) probes as the recognition element and measures specific binding processes such as the formation of deoxyribonucleic acid-deoxyribonucleic acid (DNA-DNA), deoxyribonucleic acid- ribonucleic acid (DNA-RNA) hybrids, or the interactions between proteins or ligand molecules with DNA at the sensor surface.In this thesis, I present four binary and two ternary-electrochemically and optically modulated selenide and telluride quantum dots, all synthesised at room temperature in aqueous media. Cationic gallium (Ga3+) synthesized in form of hydrated gallium perchlorate salt[Ga(ClO4)3.6H2O] from the reaction of hot perchloric acid and gallium metal was used to tailor the optical and electrochemical properties of the selenide and telluride quantum dots. The synthesized cationic gallium also allowed successful synthesis of novel water soluble and biocompatible capped gallium selenide nanocrystals and gallium telluride quantum dots. Cyclic voltammetric studies inferred that presence of gallium in a ZnSe-3MPA quantum dot lattice improved its conductivity and significantly increased the electron transfer rate in ZnTe-3MPA.Utraviolet-visible (UV-vis) studies showed that incorporation of gallium into a ZnSe-3MPA lattice resulted in a blue shift in the absorption edge of ZnSe-3MPA from 350 nm to 325 nm accompanied by decrease in particle size. An amphiphilic bifunctional molecule, 3-Mercaptopropionic acid (3-MPA) was used as a capping agent for all quantum dots. It was found that 3-MPA fully solubilised the quantum dots, made them stable, biocompatible, non agglomerated and improved their electron transfer kinetics when immobilized on gold electrodes.Retention of the capping agent on the quantum dot surface was confirmed by Fourier transform infrared spectroscopy (FTIR) which gave scissor type bending vibrations of C-H groups in the region 1365 cm-1 to 1475 cm-1, stretching vibrations of C=O at 1640 cm-1, symmetric and asymmetric vibrations of the C-H in the region 2850 cm-1 to 3000 cm-1 as well as stretching vibrations of –O-H group at 3435 cm-1. The particle size and level of non-agglomeration of the quantum dots was studied by high resolution transmission electron microscopy (HRTEM). The optical properties of the quantum dots were studied using UV-vis and fluorescence spectroscopic techniques.Quantum dot/nanocrystal modified gold electrodes were prepared by immersing thoroughly cleaned electrodes in the quantum dot/nanocrystal solution, in dark conditions for specific periods of time. The electrochemical properties of the modified electrodes were characterized by cyclic voltammetry (CV), square wave voltammetry (SWV), electrochemical impedance and spectroscopy (EIS). Six sensing platforms were then prepared using quantum dot/nanocrystal, one of which was used for detection of dopamine while the rest were used for detection of a DNA sequence related to 5-enolpyruvylshikimate-3-phosphate synthase, a common vector gene in glyphosate resistant transgenic plants.The first sensing platform, consisting of ZnSe-3MPA modified gold electrode (Au|ZnSe-3MPA) gave rise to a novel method of detecting dopamine in presence of excess uric acid and ascorbic acid. Using a potential window of 0 to 400 mV, the ZnSe-3MPA masked the potential for oxidation of uric and ascorbic acids, allowing detection of dopamine with a detection limit of 2.43 x 10-10 M (for SWV) and 5.65 x 10-10 M (for steady state amperometry), all in presence of excess uric acid (>6500 higher) and ascorbic acid (>16,000 times higher). The detection limit obtained in this sensor was much lower than the concentration of dopamine in human blood(1.31 x 10-9 M), a property that makes this sensor a potential device for detection of levels of dopamine in human blood.The other sensing platforms were prepared by bioconjugation of amine-terminated 20 base oligonucleotide probe DNA (NH2-5′-CCC ACC GGT CCT TCA TGT TC-3′) onto quantum dot modified electrodes with the aid of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC) and N-hydroxysuccinimide (NHS). The prepared DNA electrodes were electrostatically hybridized with different sequences which included 5′-GAA CAT GAA GGA CCG GTG GG-3′ (complementary target), 5′-CATAGTTGCAGCTGCCACTG-3′ (non complementary target) and 5′-GATCATGAAGCACCGGAGGG-3′ (3-base mismatched target).The hybridization events were monitored using differential pulse voltammetry (DPV) and SWV by monitoring the guanine oxidation signal or using EIS by monitoring changes in the charge transfer resistance. The quantum dot genosensors were characterized by low detection limits (in the nanomolar range), long linear range (40 - 150 nM) and were able to discriminate among complementary, non-complementary and 3-base mismatched target sequences.
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Liyanage, Geethika Kaushalya. "Infrared Emitting PbS Nanocrystals through Matrix Encapsulation." Bowling Green State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1403953924.

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7

Sala, Elisa Maddalena [Verfasser], Dieter [Akademischer Betreuer] Bimberg, Xavier [Gutachter] Wallart, and Dieter [Gutachter] Bimberg. "Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories / Elisa Maddalena Sala ; Gutachter: Xavier Wallart, Dieter Bimberg ; Betreuer: Dieter Bimberg." Berlin : Technische Universität Berlin, 2018. http://d-nb.info/1161007008/34.

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8

Shiman, Dmitriy I., Vladimir Sayevich, Christian Meerbach, Pavel A. Nikishau, Irina V. Vasilenko, Nikolai Gaponik, Sergei V. Kostjuk, and Vladimir Lesnyak. "Robust Polymer Matrix Based on Isobutylene (Co)polymers for Efficient Encapsulation of Colloidal Semiconductor Nanocrystals." American Chemical Association, 2019. https://tud.qucosa.de/id/qucosa%3A74322.

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We introduce new oxygen- and moisture-proof polymer matrixes based on polyisobutylene (PIB) and its block copolymer with styrene [poly(styrene-block-isobutylene-blockstyrene), PSt-b-PIB-b-PSt] for the encapsulation of colloidal semiconductor nanocrystals. In order to prepare transparent and processable composites, we developed a special procedure of nanocrystal surface engineering including ligand exchange of parental organic ligands to inorganic species followed by the attachment of specially designed short-chain PIB functionalized with an amino group. The latter provides excellent compatibility of the particles with the polymer matrixes. As colloidal nanocrystals, we chose CdSe nanoplatelets (NPLs) because they possess a large surface and thus are very sensitive to the environment, in particular in terms of their limited photostability. The encapsulation strategy is quite general and can be applied to a wide variety of semiconductor nanocrystals, as demonstrated on the example of PbS quantum dots. All obtained composites exhibited excellent photostability, being tested in a focus of a powerful white-light source, as well as exceptional chemical stability in a strongly acidic media. We compared these properties of the new composites with those of widely used polyacrylate-based materials, demonstrating the superiority of the former. The developed composites are of particular interest for application in optoelectronic devices, such as color-conversion light-emitting diodes, laser diodes, luminescent solar concentrators, etc.
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9

Baronnier, Justine. "Encapsulation de nanocristaux II-VI dans une matrice semiconductrice de pérovskite hybride d’halogénure de plomb en vue de la création d’un dispositif de contrôle du clignotement." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSE1297.

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Dans le but de concevoir un dispositif de contrôle du clignotement des nanocristaux, il était nécessaire de créer un composite à l'état solide pouvant s'intégrer dans ce dispositif. Nous avons donc encapsulé des boites quantiques (BQs) à base de cadmium dans une matrice cristalline de pérovskite hybride de bromure de plomb. Ce manuscrit retrace l'ensemble des étapes qui ont été validé pour atteindre la création de ce nouveau composite. Nous avons développé avec succès une synthèse de BQs résistantes à l'encapsulation dans une matrice ionique mais également un échange de ligands inorganiques qui nous a permis d'intégrer de manière efficace les nanocristaux au sein de leur matrice en conservant leurs propriétés de luminescence. Après encapsulation, nous avons pu mettre en avant des preuves montrant une encapsulation efficace et un couplage entre les BQs et la matrice. Ces deux critères sont favorables à l'utilisation de ce composite dans le dispositif de contrôle. Ce dispositif consiste in fine à suivre optiquement la luminescence des BQs et à appliquer un champ électrique pour extraire et évacuer les charges en excès, qui sont à l'origine de l'état non émissif. Le développement de cette partie nous permettra dans le futur d'étudier le phénomène de clignotement mais surtout d'obtenir une source de photons uniques stable et à la demande
To construct a device for controlling the blinking of nanocrystals, it was necessary to create a solid-state active material that can be integrated in such an apparatus. To this end, we have encapsulated cadmium-based quantum dots (QDs) in a crystalline matrix of a hybrid lead-bromide perovskite. This manuscript describes all the steps that have been undertaken to achieve the creation of this new composite. We have developed a synthesis of QDs that are resistant to encapsulation in an ionic matrix by means of an organic-inorganic ligand exchange that allowed us to integrate nanocrystals into the matrix while conserving their luminescence properties. We were thus able to document efficient encapsulation and a coupling between the QDs and the matrix. These two characteristics are favorable for using this composite in a control device which ultimately aims at optically following the luminescence of the BQs and applying an electric field to extract and evacuate the excess charges responsible for the nonemissive state. The successful completion of this step will enable us in the future to study the phenomenon of blinking and, more importantly, to construct a stable on-demand single-photon source
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Oliveira, Elenilda Josefa de. "Transporte quântico decoerente em sistemas mesoscópicos." Universidade Federal de Sergipe, 2015. https://ri.ufs.br/handle/riufs/5363.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES
The scientific advances we have experienced in recent decades have enabled us to produce systems in the mesoscopic scale. These systems have become very useful as research tools in various areas of science. In mesoscopic physics the ondulatory characteristic of electrons is more evident than in classical physics and the electron conduction process is better represented by the wave function that describes it. Examples of application of mesoscopic systems are quantum dots which are open cavities where electrons are limited to flow through. Thus, the objective of this work is to study the effects of decoherence in the transport of electrons in two systems: i) quantum dot with a fictitious guide and ii) quantum dot with stub, where we take into account ondulatory properties of electrons. The formalism that we use is the scattering matrix, which relates the incoming and outgoing amplitudes in the scattering of waves coming in and out of the scattering region. Since the studied systems are chaotic, the scattering matrices can be treated as random. These matrices were generated by computational simulation and then the conductance values were computed. The conductance distribution was obtained by means of probabilistic analysis.
Os avanços científicos que temos experimentado nas últimas décadas proporcionaram a construção de sistemas em escala mesoscópica. Esses sistemas tornaram-se muito úteis como ferramentas de investigação em diversas áreas da ciência. Na física mesoscópica a característica ondulatória dos elétrons é mais evidente do que na física clássica e o processo de condução dos elétrons é melhor representado pela função de onda que os descreve. Exemplos da aplicação de sistemas mesoscópicos são os pontos quânticos que são cavidades abertas por onde os elétrons são limitados a fluirem. Dessa forma, o objetivo deste trabalho é estudar os efeitos da decoerência no transporte de elétrons em dois sistemas: i) ponto quântico com guia fictício e ii) ponto quântico com estube, onde levamos em consideração as propriedades ondulatórias dos elétrons. O formalismo que utilizamos é o da matriz de espalhamento, a qual relaciona as amplitudes das ondas que entram e saem da região de espalhamento. Como os sistemas estudados são caóticos, as matrizes de espalhamento podem ser tratadas como aleatórias. Geramos estas matrizes por meio de simulação computacional e delas extraímos a condutância do sistema. A distribuição da condutância foi obtida por meio de uma análise probabilística.
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Книги з теми "Quantum Dots - SiOx Matrix"

1

Towe, E., and D. Pal. Intersublevel quantum-dot infrared photodetectors. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.7.

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This article describes the basic principles of semiconductor quantum-dot infrared photodetectors based on conduction-band intersublevel transitions. Sufficient background material is discussed to enable an appreciation of the subtle differences between quantum-well and quantum-dot devices. The article first considers infrared photon absorption and photon detection, along with some metrics for photon detectors and the detection of infrared radiation by semiconductors. It then examines the optical matrix element for interband, intersubband and intersublevel transitions before turning to experimental single-pixel quantum-dot infrared photodetectors. In particular, it explains the epitaxial synthesis of quantum dots and looks at mid-wave and long-wave quantum-dot infrared photodetectors. It also evaluates the characteristics of quantum-dot detectors and possible development of quantum-dot focal plane array imagers. The article concludes with an assessment of the challenges and prospects for high-performance detectors and arrays.
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2

Fyodorov, Yan, and Dmitry Savin. Condensed matter physics. Edited by Gernot Akemann, Jinho Baik, and Philippe Di Francesco. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780198744191.013.35.

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This article discusses some applications of concepts from random matrix theory (RMT) to condensed matter physics, with emphasis on phenomena, predicted or explained by RMT, that have actually been observed in experiments on quantum wires and quantum dots. These observations range from universal conductance fluctuations (UCF) to weak localization, non-Gaussian thermopower distributions, and sub-Poissonian shot noise. The article first considers the UCF phenomenon, nonlogarithmic eigenvalue repulsion, and sub-Poissonian shot noise in quantum wires before analysing level and wave function statistics, scattering matrix ensembles, conductance distribution, and thermopower distribution in quantum dots. It also examines the effects (not yet observed) of superconductors on the statistics of the Hamiltonian and scattering matrix.
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Частини книг з теми "Quantum Dots - SiOx Matrix"

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Leitsmann, R., and F. Bechstedt. "Ab-initio Characterization of Electronic Properties of PbTe Quantum Dots Embedded in a CdTe Matrix." In High Performance Computing in Science and Engineering '10, 135–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15748-6_10.

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Racec, P. N., E. R. Racec, and H. Neidhardt. "R-matrix Formalism for Electron Scattering in Two Dimensions with Applications to Nanostructures with Quantum Dots." In Engineering Materials, 149–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12070-1_7.

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Fortunati, I., S. Gardin, F. Todescato, R. Signorini, R. Bozio, J. J. Jasieniak, A. Martucci, et al. "One- and Two-Photon Pumped DFB Laser Based on Semiconductor Quantum Dots Embedded in a Sol-Gel Matrix." In Biophotonics: Spectroscopy, Imaging, Sensing, and Manipulation, 415–16. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9977-8_44.

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Heidarzadeh, Hamid, Ghassem Rostami, Mahboubeh Dolatyari, and Ali Rostami. "Comparison the Effect of Size and Inter-dot Spaces in Different Matrix Embedded Silicon Quantum Dots for Photovoltaic Applications." In 2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014), 77–83. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-16901-9_10.

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Bailes, Julian, and Mikhail Soloviev. "The Application of Semiconductor Quantum Dots for Enhancing Peptide Desorption, Improving Peak Resolution and Sensitivity of Detection in Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometry." In Nanoparticles in Biology and Medicine, 211–17. Totowa, NJ: Humana Press, 2012. http://dx.doi.org/10.1007/978-1-61779-953-2_16.

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Verma, A., P. K. Bhatnagar, P. C. Mathur, S. Nagpal, P. K. Pandey, and J. Kumar. "Development of Low Size Dispersion, High Volume Fraction and Strong Quantum Confined CdSxSe1-x Quantum Dots Embedded in Borosilicate Glass Matrix and Study of their Optical Properties." In Semiconductor Photonics: Nano-Structured Materials and Devices, 161–63. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.161.

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Singh, Babita, Sonali Singhal, and Tanzeel Ahmed. "Cosmetic and Medical Applications of Fungal Nanotechnology." In Mycology: Current and Future Developments, 238–58. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815051360122030013.

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Nanotechnology is the science of manipulating atoms and molecules in the nanoscale - 80,000 times smaller than the width of a human hair. Nanotechnology is a revolutionary technology that is being used in many fields all over the world as it finds applications in automobiles, electronics, material science, etc. Fungal nanotechnology has great prospects for developing new products with industrial, agricultural, medicinal, and consumer applications in a wide range of areas. Nanotechnology has applications in the field of cosmetics, which are known as nanocosmetics. Various types of nanomaterials are employed in cosmetic and medical applications i.e. inorganic nanoparticles, Silica (SiO2 ), Carbon Black, Nano-Organic materials, Nano Hydroxyapatite, Gold, and Silver Nanoparticles, Nanoliposomes, etc. NPs have been explored and identified as carriers for drug delivery. New drug delivery systems based on nanotechnology have been applied in the treatment of human diseases, such as cancer, diabetes, microbial infections, and gene therapy. The benefits of these treatments are that the drug is targeted to diseased cells, and its safety profile is enhanced by the reduced toxic side effects to normal cells. In general, NPs can be conjugated with different types of drugs to deliver bioactive compounds to the target site by various methods, such as the use of nanotubes, liposomes, quantum dots, nanopores, and dendrimers. It is employed in fuel cell applications that involve polymers in the proton exchange membrane, binder for the electrodes, and matrix for bipolar plates.
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Igor, Vurgaftman. "Superlattice and Quantum-Well Band Structure." In Bands and Photons in III-V Semiconductor Quantum Structures, 303–42. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.003.0010.

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This chapter presents typical band structures for superlattices and quantum wells computed using the methods described in Chapter 9. It identifies important features of the conduction and valence subbands and minibands, their dispersions, optical matrix elements, and characteristic dependences on the materials, thicknesses, and compositions. The changes that occur when the energy gap becomes very small are also discussed. To complete the picture, it considers how the band structure of wurtzite materials differs from their zinc-blende counterparts, as well as the band structure of quantum wires and dots that feature multidimensional confinement.
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Maxwell Andrews, Aaron, Matthias Schramböck, and Gottfried Strasser. "InAs Quantum Dots on AlxGa1−xAs Surfaces and in an AlxGa1−xAs Matrix." In Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, 62–83. Elsevier, 2008. http://dx.doi.org/10.1016/b978-0-08-046325-4.00002-5.

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Antolini, F., and L. Ortolani. "CdTe QUANTUM DOTS NANOCOMPOSITE FILMS OBTAINED BY THERMAL DECOMPOSITION OF PRECURSORS EMBEDDED IN POLYMERIC MATRIX." In Physics, Chemistry and Application of Nanostructures, 349–52. WORLD SCIENTIFIC, 2017. http://dx.doi.org/10.1142/9789813224537_0080.

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Тези доповідей конференцій з теми "Quantum Dots - SiOx Matrix"

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Panigrahi, Shrabani, Durga Basak, Alka B. Garg, R. Mittal, and R. Mukhopadhyay. "Emission Properties from ZnO Quantum Dots Dispersed in SiO[sub 2] Matrix." In SOLID STATE PHYSICS, PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3606317.

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Tsang, W. M., V. Stolojan, B. J. Sealy, S. P. Wong, and S. R. P. Silva. "Electron Field Emission Properties of Co Quantum Dots in SiO2 Matrix Synthesised by Ion Implantation." In 2006 19th International Vacuum Nanoelectronics Conference. IEEE, 2006. http://dx.doi.org/10.1109/ivnc.2006.335345.

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Liang, Yu, Yan Jia, Yichun Liu, Yuxue Liu, De Z. Shen, Yuling Sun, and Zhongmin Su. "Mechanism of formation and photoluminescence of Si quantum dots embedded in amorphous SiO 2 matrix." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408423.

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Di, Dawei, Ivan Perez-Wurfl, Gavin Conibeer, and Martin A. Green. "Fabrication and characterisation of silicon quantum dots in SiO 2 /Si 3 N 4 hybrid matrix." In SPIE Solar Energy + Technology, edited by Loucas Tsakalakos. SPIE, 2010. http://dx.doi.org/10.1117/12.859715.

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Kaplan, L., Y. Alhassid, Pawel Danielewicz, Piotr Piecuch, and Vladimir Zelevinsky. "Interaction matrix element fluctuations in quantum dots." In NUCLEI AND MESOSCOPIC PHYSICS: Workshop on Nuclei and Mesoscopic Physic - WNMP 2007. AIP, 2008. http://dx.doi.org/10.1063/1.2915599.

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Kar, Debjit, and Debajyoti Das. "Silicon quantum dots in SiOx dielectrics as energy selective contacts in hot carrier solar cells." In NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4917926.

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Lai, Bo-Han, Chih-Hsien Cheng, and Gong-Ru Lin. "Influence of the thickness variation of the SiOx layer on the Si Quantum Dots based MOSLED." In Asia Communications and Photonics Conference and Exhibition. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/acp.2010.798703.

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Lai, Bo-Han, Chih-Hsien Cheng, and Gong-Ru Lin. "Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED." In 2010 Asia Communications and Photonics Conference and Exhibition (ACP 2010). IEEE, 2010. http://dx.doi.org/10.1109/acp.2010.5682837.

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Zhao, Xudong, Wenlong Ma, and Xianghua 未. Wang. "Optical properties of CsPbBr3 quantum dots in PMMA matrix." In International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), edited by Yabo Fu and Kolla Bhanu Prakash. SPIE, 2023. http://dx.doi.org/10.1117/12.2686941.

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Moiseev, K. D., M. P. Mikhailova, Ya A. Parkhomenko, E. V. Gushchina, S. S. Kizhaev, E. V. Ivanov, N. A. Bert, and Yu P. Yakovlev. "InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix." In SPIE OPTO: Integrated Optoelectronic Devices, edited by Kurt G. Eyink, Frank Szmulowicz, and Diana L. Huffaker. SPIE, 2009. http://dx.doi.org/10.1117/12.809312.

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Звіти організацій з теми "Quantum Dots - SiOx Matrix"

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Oktyabrsky, Serge. Performance of Scintillation Detectors Based on Quantum Dots in a Semiconductor Matrix (Final Technical Report). Office of Scientific and Technical Information (OSTI), December 2020. http://dx.doi.org/10.2172/1756058.

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