Готові списки джерел за темами / Q-MMIC

Добірка наукової літератури з теми "Q-MMIC"

Автор: Grafiati

Опубліковано: 8 вересня 2023

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Статті в журналах з теми "Q-MMIC"

Chi, J. C. L., J. A. Lester, Y. Hwang, P. D. Chow, and M. Y. Huang. "A 1-W high-efficiency Q-band MMIC power amplifier." IEEE Microwave and Guided Wave Letters 5, no. 1 (January 1995): 21–23. http://dx.doi.org/10.1109/75.382372.

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Kim, Mun-Ho, Jung-Gil Yang, and Kyoung-Hoon Yang. "High-Performance Q-Band MMIC Phase Shifters Using InGaAs PIN Diodes." Journal of electromagnetic engineering and science 9, no. 3 (September 30, 2009): 159–63. http://dx.doi.org/10.5515/jkiees.2009.9.3.159.

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Yu, M., R. H. Walden, A. E. Schmitz, and M. Lui. "Ka/Q-band doubly balanced MMIC mixers with low LO power." IEEE Microwave and Guided Wave Letters 10, no. 10 (2000): 424–26. http://dx.doi.org/10.1109/75.877233.

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Ryu, Keun-Kwan, and Sung-Chan Kim. "A Design of MMIC Mixer for I/Q Demodulator of Non-contact Near Field Microwave Probing System." Journal of the Korean Institute of Information and Communication Engineering 16, no. 5 (May 31, 2012): 1023–28. http://dx.doi.org/10.6109/jkiice.2012.16.5.1023.

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Resca, Davide, Rafael Cignani, Corrado Florian, Andrea Biondi, and Francesco Scappaviva. "A Q/Ku-K band MMIC double-balanced subharmonic diode ring mixer for satellite communications in GaAs pHEMT technology." International Journal of Microwave and Wireless Technologies 7, no. 2 (May 14, 2014): 107–13. http://dx.doi.org/10.1017/s1759078714000695.

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A MMIC double-balanced subharmonic diode ring mixer was designed for broadband satellite communications exploiting a GaAs pHEMT process. The circuit implements the frequency conversion from Q (43.5–50 GHz) to Ku-K band (17–21.5 GHz). Besides the RF, LO, and IF baluns, the MMIC integrates a buffer amplifier for the local oscillator signal, which is designed between X and Ku bands (11–16.5 GHz), due to the subharmonic operation. The mixer measured conversion loss is between 8 and 12 dB along the bandwidth, with an LO power of 9 dBm. The input p1 dB and IP3 are 2 and 15 dBm, respectively. The balanced structure ensures an LO and 2 × LO leakages at the IF port lower than −25 and −35 dBm, respectively. Other spurious remain below −67 dBc. The chip dimensions are 2.4 × 2.4 mm2.

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Lam, W., M. Matloubian, A. Kurdoghlian, L. Larson, A. Igawa, C. Chou, L. Jelloian, A. Brown, M. Thompson, and C. Ngo. "High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications." IEEE Microwave and Guided Wave Letters 3, no. 11 (November 1993): 420–22. http://dx.doi.org/10.1109/75.248519.

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Dan, An, Rhee Eung-Ho, Rhee Jin-Koo, and Kim Sam-Dong. "Design and fabrication of a wideband MMIC Low-Noise Amplifier using Q-matching." Journal of the Korean Physical Society 37, no. 6 (December 1, 2000): 837. http://dx.doi.org/10.3938/jkps.37.837.

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Youngwoo Kwon, Kyungjin Kim, E. A. Sovero, and D. S. Deakin. "Watt-level Ka- and Q-band MMIC power amplifiers operating at low voltages." IEEE Transactions on Microwave Theory and Techniques 48, no. 6 (June 2000): 891–97. http://dx.doi.org/10.1109/22.846714.

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Xu, Zhengbin, Jie Xu, Yinjie Cui, Jian Guo, and Cheng Qian. "A low-cost W-band SPDT switch with Q-MMIC concept using quartz substrate." Journal of Electromagnetic Waves and Applications 32, no. 4 (October 28, 2017): 428–38. http://dx.doi.org/10.1080/09205071.2017.1394915.

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Kim, M., J. G. Yang, and K. Yang. "Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes." Electronics Letters 46, no. 3 (2010): 219. http://dx.doi.org/10.1049/el.2010.2007.

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Більше джерел

Дисертації з теми "Q-MMIC"

Leno, Antoine. "Contribution à l’amélioration des performances en rendement et en stabilité d’impulsion à impulsion des amplificateurs de puissance, conçus à base de transistors en Nitrure de Gallium, pour les applications RADAR en Bande S." Electronic Thesis or Diss., Limoges, 2023. http://www.theses.fr/2023LIMO0022.

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Ces travaux de thèse s’intègrent dans le cadre des études et des recherches pour améliorer les performances conjointes de puissance, de gain, de rendement et stabilité d’impulsion à impulsion des amplificateurs de puissance à base de transistor en technologie GaN pour la mise en œuvre de RADAR à antennes actives en bande S qui constituent actuellement un enjeu primordial au niveau académique comme au niveau industriel. La conception de ces amplificateurs de puissance pour la détection précise et fiable de cibles représente un défi majeur pour les entreprises du domaine, lorsqu’il est associé à des rendements énergétiques ambitieux avec un objectif supérieur à 65%. Une méthode de conception d’amplificateur de puissance en technologie Q-MMIC en boîtier plastique DFN fondé sur l’utilisation des transistors compacts GH15 EU a été développée et utilisée pour concevoir un amplificateur de puissance fonctionnant en bande S [2.9 - 3.3] GHz. L’amplificateur de puissance réalisé a été caractérisé en termes de rendement en puissance ajoutée, de puissance délivrée, de gain et de stabilité d’impulsion à impulsion en présence de signaux radar. L’amplificateur de puissance compact montre des performances très intéressantes comparées à celles obtenue dans la littérature. En effet, à une puissance moyenne disponible du générateur égale à 26dBm, dans la bande [2.8 - 3.3] GHz, la PAE est comprise entre 59% et 66%, la puissance délivrée varie entre 45W et 52W sur la bande considérée et elle est associée à un gain supérieur à 20dB et une stabilité d’impulsion à impulsion calculée égale à -52dB par la méthode RMS. Les résultats de caractérisations de l’amplificateur de puissance à très haut rendement/ haute puissance à base de transistors compact GH15 EU ont démontré l’intérêt de son utilisation dans les nouvelles générations des systèmes radar en termes de performances RF, de stabilité P2P, d’intégration et de coût
This thesis work is part of the studies and research to improve the joint performance of power, gain, efficiency and pulse-to-pulse stability of transistor-based power amplifiers in GaN technology for the implementation of RADAR with active antennas in S-band, which is currently a major issue at the academic and industrial levels. The design of these power amplifiers for accurate and reliable detection of targets represents a major challenge for companies in the field, when associated with ambitious energy yields with an objective greater than 65%. A design method for a power amplifier in Q-MMIC technology in a DFN plastic package based on the use of GH15 EU compact transistors has been developed and used to design a power amplifier operating in the S-band [2.9 - 3.3] GHz. The realized power amplifier has been characterized in terms of added power efficiency, delivered power, gain and pulse-to-pulse stability in the presence of radar signals. The compact power amplifier shows very interesting performances compared to those obtained in the literature. Indeed, at an average available power of the generator equal to 26dBm, in the band [2.8 - 3.3] GHz, the PAE is between 59% and 66%, the delivered power varies between 45W and 52W on the considered band and it is associated with a gain higher than 20dB and a pulse-to-pulse stability calculated equal to - 52dB by the RMS method The results of the characterization of the GH15 EU compact transistor based high efficiency/high power power amplifier have demonstrated the interest of its use in the new generation of radar systems in terms of RF performance, P2P stability, integration and cost

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Seyfollahi, Alireza. "Monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) design for radio astronomy applications." Thesis, 2018. https://dspace.library.uvic.ca//handle/1828/9278.

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The presentation highlights research on theory, design, EM modeling, fabrication, packaging, and measurement of GaAs Monolithic Microwave Integrated Circuits (MMICs). The goal of this work is to design MMIC LNAs with low noise figure, high gain, and wide bandwidth. The work aims to develop GaAs MMIC LNAs for the application of RF front-end receivers in radio telescopes. GaAs MMIC technology offers modern radio astronomy attractive solutions based on its advantage in terms of high operational frequency, low noise, excellent repeatability and high integration density. Theoretical investigations are performed, presenting the formulation and graphical methods, and focusing on a systematic method to design a low noise amplifier for the best noise, gain and input/output return loss. Additionally, an EM simulation method is utilized and successfully applied to MMIC designs. The effect of packaging including the wire bond and chassis is critical as the frequency increases. Therefore, it is modeled by full-wave analysis where the measured results verify the reliability of these models. The designed MMICs are validated by measurements of several prototypes, including three C/X band and one Q band MMIC LNAs. Moreover, comparison to similar industrial chips demonstrates the superiority of the proposed structures regarding bandwidth, noise and gain flatness, and making them suitable for use in radio astronomy receivers.
Graduate
2020-05-01

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Chuang, Kuen-Juong, and 莊坤榮. "Design and fabrication of high Q inductor for MMICs." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/72687641157508710543.

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碩士
國立交通大學
電信工程研究所
84
Planar microwave inductors are fabricated on a dielectric membrane to reduce the parasitic capacitance to ground. The fabricated inductors were characterized by using HP8510B network analyzer. The resonant frequency of both 113 nH and 130 nH membrane inductor have been pushed from 0.95 and 0.80 GHz to 1.80 and 1.65 GHz, and the Q value have been increased from 4.8 and 5 to 9 and 12, respectively. An equivalent model has been established to characterizes membrane inductors successfully by good S-parameters curve fittings with measurements and the optimization routine used in this work are TOUCHSTONE (R) and LIBRA(R) software. Besides, the techniques of the formations of low tensile stress membranes and multilayer metal interconnections were well developed to achieved the structure of membrane inductors.

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Тези доповідей конференцій з теми "Q-MMIC"

Teran Collantes, J. Vicente, Luisa de la Fuente, Beatriz Aja, and Eduardo Artal. "Cryogenic broadband Q-band MMIC low-noise amplifier." In 2016 11th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2016. http://dx.doi.org/10.1109/eumic.2016.7777494.

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Lynch, J., F. A. Traut, K. Benson, and R. Tshudy. "An mHEMT Q-Band Integrated LNA and Vector Modulator MMIC." In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2010. http://dx.doi.org/10.1109/csics.2010.5619652.

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Iverson, Eric W., and Milton Feng. "A 0.05-26 GHz Direct Conversion I/Q Modulator MMIC." In 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2014. http://dx.doi.org/10.1109/csics.2014.6978527.

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Badiere, D. N., C. W. T. Nicholls, and J. S. Wight. "High Q MMIC spiral inductor study using production silicon process." In Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]. IEEE, 2000. http://dx.doi.org/10.1109/antem.2000.7851646.

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Katzin, P., B. Bedard, and Y. Ayasli. "Narrow-band MMIC filters with automatic tuning and Q-factor control." In IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers. IEEE, 1993. http://dx.doi.org/10.1109/mcs.1993.247458.

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Yukawa, Hidenori, Masatake Hangai, Hiroyuki Mizutani, Koji Yamanaka, Motomi Abe, Akira Inoue, and Moriyasu Miyazaki. "Q-band gaas MMIC modules for active phased array antenna systems." In 2009 European Microwave Conference (EuMC). IEEE, 2009. http://dx.doi.org/10.23919/eumc.2009.5296099.

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Ng, C. Y., M. Chongcheawchamnan, and I. D. Robertson. "Miniature Ka-Band I/Q Vector Modulator using 3D-MMIC Technology." In 33rd European Microwave Conference, 2003. IEEE, 2003. http://dx.doi.org/10.1109/euma.2003.341084.

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Ng, C. Y., M. Chon, and I. D. Robertson. "Miniature Ka-band I/Q vector modulator using 3D-MMIC technology." In 33rd European Microwave Conference Proceedings. IEEE, 2003. http://dx.doi.org/10.1109/eumc.2003.177607.

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Feuerschutz, Philip, Christian Friesicke, Rudiger Quay, and Arne F. Jacob. "A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT." In 2016 11th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2016. http://dx.doi.org/10.1109/eumic.2016.7777551.

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Ayad, Mohammed, Kimon Vivien, Hugo Debergé, Zineb Ouarch, and Philippe Auxemery. "A High Efficiency Q-band MMIC GaN Power Amplifier for Space Applications." In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023. IEEE, 2023. http://dx.doi.org/10.1109/ims37964.2023.10188129.

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