Дисертації з теми "Pyroelectric InfraRed"
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STAHL, HARLOW PHILIP. "INFRARED PHASE-SHIFTING INTERFEROMETRY USING A PYROELECTRIC VIDICON (TESTING, FABRICATION)." Diss., The University of Arizona, 1985. http://hdl.handle.net/10150/187965.
Повний текст джерелаBenjamin, Kenneth D. "Non-amplified pyroelectric PVDF sensors on ceramic and PCB substrates." Thesis, Edinburgh Napier University, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341569.
Повний текст джерелаWeller, Harald. "CMOS monolithic pyroelectric infrared focal plane arrays using PVDF thin films." Thesis, Edinburgh Napier University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323080.
Повний текст джерелаRizq, Raed Nicholas. "The design and analysis of a micromachined pyroelectric detector for infrared radiation /." Diss., ON-CAMPUS Access For University of Minnesota, Twin Cities Click on "Connect to Digital Dissertations", 1997. http://www.lib.umn.edu/articles/proquest.phtml.
Повний текст джерелаOliviere, Pierre Anthony Rees. "FT-infrared and pyroelectric studies on calix[8]arene Langmuir-Blodgett films." Thesis, Sheffield Hallam University, 2001. http://shura.shu.ac.uk/20141/.
Повний текст джерелаAl-Naimi, Ibrahim. "Advanced multimodal approach for non-tagged indoor human identification and tracking using smart floor and pyroelectric infrared sensors." Thesis, De Montfort University, 2011. http://hdl.handle.net/2086/5182.
Повний текст джерелаBazkir, Ozcan. "Realization Of Detector Based Spectral Responsivity Scale From Ultraviolet To Near Infrared Regions Of Electromagnetic Spectrum." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/2/12605148/index.pdf.
Повний текст джерелаs, reflectance and internal quantum efficiency the scale between 350- 850 nm ranges was realized with an uncertainty of 0.05 %. Finally, the spectral responsivity scale in ultraviolet (UV) and near-infrared (NIR) regions was realized using Electrically Calibrated Pyroelectric Radiometer (ECPR). Optically characterizing the spatial non-uniformity of pyroelectric detector and its surface reflectance, the spectral responsivity scale was established with uncertainties ±
0.5-1.0 % between 250 nm and 350 nm and ±
0.5-1.5 % between 850 and 2500 nm.
El, Fatnani Fatima Zahra. "Récupération d’énergie issue des variations temporelles de la température par effet pyroélectrique." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI088/document.
Повний текст джерелаThis experimental thesis focuses on the energy harvesting for micro-generators and au- tonomy of electronic devices with low consumption. This work proposes the possibilities of har- vesting thermal energy by pyroelectric effect. The thermal energy to be converted is thermal fluc- tuations. We proposed two main techniques to generate electricity by pyroelectric ceramic. The first one focuses on the harvesting of infrared radiation associated with the SSHI technique. Ori- ginally, the SSHI technique was developed in the case of the piezoelectric energy harvesting, but we applied it in the case of pyroelectricity and which allowed us to maximize the harvested power by a factor of 2. The second proposed technique concerns the harvesting of thermal fluctuations resulting from convective movements originating inside a fluid in the Rayleigh-Bernard configu- ration. We have carried out several studies to increase the convective transfer in order to improve the pyroelectricresponse and maximize the harvested power. In the case of natural convection, the choice of a suitable fluid and the optimization of the control parameters of the Rayleigh-Bernard configuration are essential steps in order to achieve better heat transfer by convection. In the case of forced convection, it has been studied the advantage of dispersing copper nanoparticles in a pure fluid to increase the convective transfer. With this nanofluid, the pyroelectric response was maximized by a factor of 10
Bauer, Philippe. "Caractérisation et modélisation de senseurs infrarouges pyroélectriques monolithiques utilisés en détection d'obstacles." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0140.
Повний текст джерелаLin, Ui-Yen, and 林裕源. "Pyroelectric Film Infrared Sensor." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/88702375460564134805.
Повний текст джерела國立臺灣大學
機械工程學研究所
92
For working up a infrared sensor, I did a research on pyroelectric film sensor. The zinc oxide is fabrication on the silicon nitride. The back-etching was done by KOH wet etch. Zinc oxide is fabrication by RF Sputter. After trying different prescription and processing parameters, I fond out the good performance of sputter, film thickness, anneal, and area. This paper studies pyroelectricity, sensor design, and signal detection. And have a new technology at the electrode. Found out the field electrode sensor have good performance. The human infrared ray and near-infrared ray could be sensed by the zinc oxide pyroelectric sensor. It could be reaped manufactured and fit our goal.
HUANG, HONG-YAN, and 黃宏彥. "Analysis of pyroelectric infrared image device." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/81900488884104131099.
Повний текст джерелаLung, Ting-hua, and 龍定華. "Pyroelectric infrared sensor of the optical system simulation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/69652379331786222183.
Повний текст джерела國立中央大學
光電科學研究所碩士在職專班
100
The main purpose of this paper is the study of the pyroelectric infrared sensor of the optical system simulation, which is using TracePro optical simulation software, to focus electrical type infrared sensors,optical components for the design and analysis, and to optimize the sensing range of products design goals. The first chapter is to introduce the history and circumstances of the infrared,the second chapter is an introduction to infrared theory and pyroelectric infrared sensor. Chapter III of the Taguchi method and simulation software, TracePro to do experimental analysis will establish the best combination of design parameters, the Taguchi method in the parameter design, the use of plastic lens material, lens size, lens focal length, Fresnel lens fringe spacing, lens aimed at the location and lens thickness of six control factors and the five standards of parameter design, and focus to improve the human infrared sensor window irradiance.Orthogonal array of Taguchi method L25 (56) set the parameters to use tracepro optical simulation software to simulate, and has made 25 sets of simulation results, and then simulation results using orthogonal array calculated using the orthogonal array design and variance analysis to find out why the major effector molecules in the process, as well as interactions between each factor on the response to the value of optimization, can effectively reduce the number of simulations, the original six factors, five standards to be done to the 15 625 simulated simplified to 25, so that the design in a short period of time to get better design parameters.Without the original design of the Taguchi method to optimize the sensor optical system, by TracePro simulation of the status of the radiation intensity (Irradiance) 14.613 W/m2; Taguchi method, to predict the status of best design parameters illumination of the radiation to 52.797 W/m2 irradiance be improved significantly.
Tsai, Yun-Lin, and 蔡昀霖. "Real-Time Motion Detection System with Pyroelectric Infrared Sensors." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/bsu66g.
Повний текст джерела國立中興大學
通訊工程研究所
104
Pyroelectric infrared (PIR) sensors are low-cost, low-power sensors, which are widely used in energy saving systems and alarm systems. With the development of IoT applications, PIR sensors are ideal for monitoring the movements of a target. In this thesis, two PIR sensors are applied to build a movement detection system with real-time information transmission to a mobile phone via Bluetooth technology. This thesis aims to improve the accuracy of movement detection by comparing the effects of different experimental settings (e.g., by altering the distance, tuning the angle between two PIR sensors, and adjusting the detection range of Fresnel lens). Accordingly, we analyze the experimental results and propose several feasible ways to further improve the system reliability.
YuBinChen and 陳玉彬. "Design and Fabrication of Pyroelectric Film Infrared Ray Sensor." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/07982760985434963697.
Повний текст джерела國立臺灣大學
機械工程學研究所
88
For waking up a wireless mouse in sleeping mode, I did a research on pyroelectric film sensor. This paper studies pyroelectricity, sensor design, and MEMS fabrication process. After manufacturing the pyroelectric film sensor, I successfully did experience on IR source (Heat Oven) even on human and got perfect response. The pyroelectric film is composed of PZT and fabricated in MOD. After trying different prescription and processing parameters, I fond out the PZT film which Zr/Ti=53/47, Pb exceeding 10% and annealed at 700 ℃ having good performance. The film thickness could be more than 1 mm. Under 0~100 ℃, the film pyroelectric coefficient is 1.52×10-8 (C/cm2 K). The PZT film is suitable not only for pyroelectric sensor material, but also for mechanical sensor and actuator. I observed and recorded the reason of film destruction and brought up a practicable method to improve the fabrication process. The human infrared ray could be sensed by t he PZT pyroelectric sensor in the range of 10 ~ 20 mm, operating frequency 0.1 ~ 2.0 Hz. It could be reaped manufactured and fit our goal.
Lai, Han Chung, and 來漢中. "The Analysis and Design of Pyroelectric Infrared Readout Circuit." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/43475072762952219761.
Повний текст джерелаchu, kai-peng, and 朱凱鵬. "The Characterization and Fabrication of Pyroelectric Infrared image Sensor." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/25581533502000938825.
Повний текст джерела國立臺灣海洋大學
電機工程學系
92
Abstract In this paper, the integrated Pyroelectric Infrared image Sensors have been made using a Ca-Modified Lead Titanate (Pb0.7Ca0.3TiO3, PCT) thin films by RF sputtering method on silicon substrate. In addition, the etching technology is used to increase the sensitivity of the device. According as the technology, we can fabricate PIR image array to study the distribution of thermal image. The deposited PCT thin film is the perovskite structure and the PCT thin film at annealed 650℃for 15 minutes can obtain the better performance. From the hysteresis loop, its remanent polarization (Pr) is 25.3 mC/cm2 and the coercive electric field is 52.65 KV/cm. Its pyroelectric coefficient is 4.13×10-4 C/m2K at 300℃. For the PIR performance measurement, the voltage response of the single PIR sensor is 468.98 VW-1 and the specific detectivity is 8.28×106 cmW-1 at 0.3 Hz. In addition, we use these results to fabricate 2-D 8x8 element PIR image sensors. The sensor has been used for thermal image test in this experiment.
Fang, Jian-Shuen, and 方建舜. "Pyroelectric Infrared Biometric Systems for Real-Time Human Identification." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/13781066981337490131.
Повний текст джерела國立交通大學
光電工程系所
95
In this study, we proposed novel designs for computational systems that use biometrics and non-conventional imaging approaches to capture thermal motion features of humans to achieve real-time path-dependent and path-independent gait for human identification. Feature representation is key to biometric recognition system. From a thermal perspective, each person represents a distributed infrared source, the distribution function of which is determined by shape and IR emissivity of the skin at every point. When humans walk, the motion of various parts of the body, including the torso, arms, and legs, produces a characteristic signature. Combined with idiosyncrasies of carriage, heat will uniquely impact a surrounding sensor field, even while the subject follows a prescribed path. The pyroelectric infrared (PIR) sensor is a high performance IR radiation detector and its low cost and low power consumption make it attractive for a wide range of applications. When the temperature changes, electric charge will built up on the sensing element by virtue of pyroelectricity. The resulting charge translated into a current that a current-to-voltage transductance amplifier converted to a voltage signal. By measuring the sensor response generated by a person walking within the field of view of a PIR sensor module, we can model this response data to a code vector that uniquely identifies the person. We have developed two PIR feature-generating sensor systems. One system is analog, the other digital, and both are derived from the signals generated by humans crossing the detection areas. We successfully demonstrate that by selecting suitable sensor configurations and feature extraction/training algorithms, the sensor systems are capable of performing human identification.
Shih, Chiao-Hui, and 施巧蕙. "A Study of Integrate Amplifier and Pyroelectric Infrared Sensor." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/66137439604101126751.
Повний текст джерела國立臺灣海洋大學
電機工程學系
98
In this experiment, radio frequency magnetron sputter deposition is used to deposit pyroelectric Lead Calcium Titanate Pb0.7Ca0.3TiO3 (PCT) thin film on silicon substrate and to prepare integrated pyroelectric thin film infrared sensor device. Meanwhile, TSMC 0.35um 2P4M 3.3V process is used to design band-gap and amplifier, then pyroelectric infrared sensor device and CIC designed chip is bonded together to perform the measurement. In lead calcium titanate thin film aspect, from the results of SEM, AFM and XRD diffraction, it can be seen that better characteristic can be obtained in lead calcium titanate thin film when the annealing temperature is at 650℃ for 15 minutes. In the electrical characteristic measurement of the device, remanent polarization is 5.59μC/cm2, cocercive electric field is 37.5kV/cm2. At 110℃, the pyroelectric coefficient is 1.4310-5 C/m2K . In device characteristic aspect, for single sensor at 1 Hz chopper frequency, the maximal voltage response is 217.67V/W, and the maximal specific detectivity of the device is 2.53 106 (cmHz1/2W-1). Maximal normalized detectivity at measurement frequency of 1 Hz, which is about 1.02 105 (cmHz1/2W-1). In the circuit design aspect, when work voltage is at 3.3V, power consumption 9.4 mW, gain is at 77.131 dB, phase is 60.75∘, power supply rejection ratio (PSRR) is 126 dB, common mode rejection ratio (CMRR) is 103 dB. Through the above results,pyroelectric infrared sensor device and CIC designed amplifier is bonded and measured. The maximal voltage response is 6905.52V/W at 1Hz and the maximal normalized detectivity is 1 107 (cmHz1/2W-1) at measurement frequency of 1 Hz.
Tang, Chin-Shin, and 湯欽昕. "An Integrated Infrared Sensor Using the Pyroelectric PZT Thin Film." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/27516763186043250896.
Повний текст джерела國立海洋大學
電機工程學系
85
The Lead-Zirconate-Titanate (Pb(Zr52Ti48)O3, PZT) thin films, 0.5um, have been deposited on Pt/Si substrate at room temperature by RF planar magnetron sputtering technique. The annealing temperature of the PZT thin film are 650(degree)C to 750(degree)C and perovskite structure is obtained. By the X- ray diffraction(XRD) analysis, the FWHM of (110) plane is 0.23(degree) and (110) orientation a is 0.12. The values of the remanent polarization Pr and thecoercive field Ec of the PZT thin film are 100nCcm^(-2) and 0.6KVcm^(-1) ,respectively, at 60Hz. The measured pyroelectric coefficient in 0.5um thin films is 3.12*10^(-4)C/m^(2)K at 50(degree)C. Their dielectric constant and theloss tangent are about 494 and 0.072, respectively, at 1KHz. The surface structure of PZT thin film was examined by scanning electron microscopy(SEM) and the grain size in the rang of 0.08-0.14um. In this paper the integrated pyroelectric infrared sensors have been made by combining a PZT thin film with an Si JFET. A JFET is used to read out the pyroelectrically generated signal. The relevant sensor parameters voltage sensitivity and specific detectivity are measured within a modulation frequencyrange from 0.2Hz to 10 Hz. With the 500um thick silicon substrate, the voltage sensitivity is RV = 191V/W, the maximum specific detectivity is D* = 2*10^(7) cmHz^(1/2)/W, at a modulation frequency of 1Hz.
Kao, Ming-Cheng, and 高銘政. "The Study of Pyroelectric Infrared Detectors Prepared by a Sol-Gel Technology." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/38329087155398484320.
Повний текст джерела國立中山大學
電機工程學系研究所
92
In this thesis, the lithium tantalite [LiTaO3, abbreviated to LT] thin films were deposited on Pt/Ti/SiO2/Si substrates by spin coating with sol-gel processing and rapid thermal processing. 1,3 propanediol was used as solvent to minimize the number of cycles of spin coating and drying processes to obtain the desired thickness of thin film. By changing the heating rate (600~3000℃/min) and the heating temperature (500~800℃), the effects of various processing parameters on the thin films growth are studied. In addition, the thermal isolation of detecting elements was achieved by the anisotropic wet etching of back silicon substrate. In order to reduce the thermal mass and thermal time constant of detector, the sensing element was built-up on a thin membrane. By changing the membrane thickness (20~350 μm), the effects of various membrane thickness on the response of pyroelectric IR detector devices are studied also. Experimental results reveal that the heating rate will influence strongly on grain size, dielectricity, ferroelectricity and pyroelectricity of LT thin films. With the increase of heating rate, the grain size of LT thin film decreases slightly, and the c-axis orientation is enhanced. The relative dielectric constant (εr ) of LT thin film increases from 28 up to 45.6, the dielectric loss (tan��) decreases from 0.009 to 0.003, the coercive field (Ec) decreases from 122 kV/cm to 60 kV/cm, the remnant polarization (Pr) increases from 7.45 �媴/cm2 to 12.12 �媴/cm2, and the pyroelectric coefficient (��) increases from 2.5�e10-8 C/cm2K up to 4.25�e10-8 C/cm2K, respectively, as the heating rate increases from 600 up to 3000℃/min. In addition, the results also show that the LT thin film possesses the largest figures of merit Fv (3.8×10-10 Ccm/J) and Fm (3.49×10-8 Ccm/J) at the heating temperature of 700℃ and heating rate of 1800℃/min. The voltage responsivity (Rv) measured at 20 Hz increases from 2747 to 4227 V/W and the specific detecivity (D*) measured at 300 Hz increases from 9.7×107 to 1.2×108 cmHz1/2/W with an increase of heating rate from 600 to 1800℃/min. However, the voltage responsivity and the specific detecivity decrease with heating rate in excess of 1800℃/min. The results show that LT1800 pyroelectric thin film detector exists both the maximums of voltage responsivity and specific detecivity. In the study of detector with backside etching, as the thickness of membrane increased from 20 μm to 350 μm, the voltage responsivity (Rv) decreased from 8398 down to 4300 V/W, and the specific detecivity (D*) also decreased from 2.7×108 to 1.2×108 cmHz1/2/W. Experimental results revealed that the thermal isolated detectors with membrane thickness of 20 μm exhibited the excellent sensitivity.
Cheng, Shu-Chun, and 鄭書峻. "Using Pyroelectric Infrared Sensor in Wireless Sensor Networks for Indoor Location System." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/2m2w3j.
Повний текст джерела國立臺北科技大學
電腦與通訊研究所
101
Currently, there is a great interest in developing applications of indoor automation control by wireless sensor networks. Pyroelectric infrared (PIR) sensor can detect the movement of human. A PIR-based wireless sensor network is able to detect human occupancy of a certain location without carrying any communication device. Therefore, the system can provide human location for indoor automation control applications. However, PIR sensor has different sensing range in every direction. Also, it is easily interfered by environmental factors, resulting in inaccurate positioning. In this paper, we first study the characteristics of PIR sensors. Then, we find a suitable sensing model to solve irregular sensing problem. We then propose the sensor deployment method and location detection algorithm based on sensing model for indoor environment, respectively to achieve accurate movement positioning. We use the matrix sensor deployment method for indoor environment. The deployment method is very simple and straightforward. We find a suitable distance of two neighbor sensors to achieve the expected detection and discrimination capability by applying sensing model. The algorithm for the location identification of human is based on the score-based ranking algorithm, which uses the collected human presence information of PIR sensors and the sensing model for calculating sensing area probability. Then, we find out the score of the sensing area with the improved weighting method. The sensing area with the highest score is the most likely current target location. The experimental results have shown that our location system can detect and locate the moving target with reasonable accuracy and precision in indoor environment. In our testbed, our location system has a location precision of 93.6% within location accuracy of 1.7 m under 1-coverage sensor deployment. Our location system has a location precision of 99.1% within location accuracy of 1.7 m under 2-coverage sensor deployment.
Chen, Chien Chung, and 陳建仲. "Human-Robot Localization Using Wireless Pyroelectric Infrared and Multi-Sensor Fusion Approaches." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/44405908094515873962.
Повний текст джерела國立中正大學
電機工程研究所
100
An indoor localization and monitoring system for robots and people is an important issue in robotics research. Although several monitoring systems are currently under development by previous investigators, but these remain significant difficulties. For instance, the Pyroelectric Infrared (PIR) system provides less accurate information of human location and is restricted when there are multiple targets. Furthermore, the Radio Frequency (RF) localization system is constrained by its limited accuracy. In this study, we propose an indoor localization and monitoring system based on a wireless and pyroelectric infrared (WPIR) sensory fusion system. We develop a sensor network based localization method called the WPIR inference algorithm. This algorithm determines the fused position from both the PIR localization system and radio frequency signal localization system which utilize the received signal strength (RSS) propagation model. We have developed and experimentally demonstrated a WPIR sensory fusion system which can be successfully applied in localizing multiple targets. With an accurate localization mechanism for the indoor environment, the provision of appropriate services for people can be realized. Mobile sensor node deployment and power management are important issues in the wireless sensor network system. This study designs a mobile sensor node platform to achieve highly accurate localization mechanism by using ultrasonic (US), dead reckoning (DR), and radio frequency (RF) information which is processed through the particle filter algorithm. Mobile sensor node with accurate localization ability is of great interest to basic researches and applications, such as sensor deployment, coverage management, dynamic power management and etc. In this study we propose an efficient mobile sensor node deployment method, grid deployment, where the map is divided into multiple individual grids and the weight of each grid is determined by environmental factors such as pre-deployed nodes, boundaries, and obstacles. The grid with minimum values is the goal of the mobile node. We also design an asynchronous power management strategy in our sensor node to reduce power consumption of sensor network. Several factors such as probability of event generation, battery status, coverage issues, and communication situations have also been taken into consideration. In network communication, we propose an asynchronous awakening scheme so that each node is free to switch on or off its components according to observed event statistics, and make a trade-off between communication and power consumption. The deepest sleep state period is determined by the residual power. By combining these methods, the power consumption of the sensor node can be reduced.
Jeng, Wei-Chung, and 鄭維中. "The characterization and fabrication of pyroelectric infrared sensor with JFET differential amplifier integration circuit." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/92401354188309334649.
Повний текст джерела國立海洋大學
電機工程學系
88
In this paper the integrated pyroelectric infrared sensors have been made using a Lead-Zirconate-Titanate (Pb(Zr0.52Ti0.48)O3,PZT) thin film on component differential JFET. The performance of the sensor use NiCr upper electrode and plus Ge filter window will be discussed. According to the XRD measurement results, the PZT thin film is the perovskite structure, and its FWHM of (110) plane is 0.526o and (110) orientation α is 0.103. In the electric measurements, the dielectric constant is 857 and loss tangent is 1.3 at the frequency of 1KHz. From the hysteresis loop, its remanent polarization (Pr) is 15.3 C/cm2 and the coercive electric field is 100.5 KV/cm. In the optical measurement, the average transparence of NiCr upper electrode is 93% under the condition that the evaporated electrode is annealed at 600℃ for 60 seconds. In addition, the characteristic of the sample add Ge filter window, it shows that the Ge windows can filter-off the radiation that its wavelength below 750 nm The voltage response of the PIR sensor with differential JFET is 955.12 VW-1 and the specific detectivity is 1.71×107 cmHz1/2W-1 at 0.8 Hz. In addition, the voltage response of the transparent NiCr upper electrode plus Ge filter windows is 874.72 VW-1, and the specific detectivity is 1.27×107 cmHz1/2W-1 0.8 Hz.
KE, CHIH-YUN, and 柯直昀. "A Study Of (Pb,Ca)TiO3 Pyroelectric Thin Film Infrared Array Thermal Image System." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/33979718148011800644.
Повний текст джерела國立臺灣海洋大學
電機工程學系
94
The experiment deposits the Pb0.3Ca0.7TiO3, PCT film which is burnt electronic neutrality to the silicon base plate based on the Radio-Frequency Sputtering System, at the same time, produces burnt electronic film infrared image sense modules. And produces burnt electronic film infrared image sense modules based on two different structures and compares the measure result of relative speciality. Use etch technology to improve the response speciality of the modules, and produce burnt electronic infrared array sensor depending on this technology, then measure and analyze the heated image of the module. At the aspect of PCT, according to the experiments of the burnt electronic coefficient, maximize sense ratio and XRD diffract, it is known that speciality is better when PCT film is perovskite structure and the anneal temperature is 650℃ and time is 15 minutes. At the aspect of speciality measure, the staggered electrode structure resist polarize mete is 2.67 C/m2 and the coercive electric field is 3.75×106 V/m2. its one-to-one electrode structure resist polarize mete is 5.34 C/m2 and the coercive electric field is 1.5×106 V/m2. Burnt coefficient at the temperature of 200℃ each is 9.26×10-4 C/m2K and 18.99×10-4 C/m2K. Because of the difference of structures, the burnt coefficient of staggered electrode structure is higher, and at the same scope of sense area, the expansion of staggered electrode module number will be better. At the aspect of module speciality, the single sensor can obtain maximized sense module voltage sensitivity at the frequency of 6.4 Hz, the one-to-one electrode structure is 383 V/W and the staggered electrode structure is 622 V/W. Each maximized specific detectivity is 1.278 105 cmHz1/2W-1 and 2.149 105 cmHz1/2W-1. According to the above results, we produced the module of burnt electronic infrared image sense which is two dimensions 16 × 16, at the same time, we discussed, compared and analyzed the merits and faults of array heated images sense which are generated by two sensors of different structures.
王鴻志. "The Characterization, Fabrication and Application of Pyroelectric Infrared Sensor with NMOSFET Differential Amplifier Intergration Circuit." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/55248382982097248184.
Повний текст джерела國立海洋大學
電機工程學系
89
In this paper the integrated pyroelectric infrared sensors have been made using a Lead-Titanate (PbTiO3) thin film on differential NMOSFET. In addition, the TMAH V-groove etch technology is used to increase the sensitivity of the device. The performance of the sensor use SiO2 for protected layer will be discussed too. In electric measurements, the remnant polarization (Pr) and the coercive electric field of the PbTiO3 is 8.96 C/cm2 and 150.3 KV/cm respectively. Its pyroelectric coefficient is 1.21×10-7 C/m2K at 200℃. For the PIR performance measurement, the pyroelectric infrared sensor with differential NMOSFET had the better voltage response and specific detectivity is 936.26 VW-1 and 1.44×107 cmHz1/2W-1 at 0.8 Hz respectively. And the voltage response and specific detectivity of the sensor with annealing SiO2 protected layer is 930.72V/W and 1.15×107 cmHz1/2W-1 respectively. To compare the specific detectivity, the two kinds of modified type is 2.14 times and 1.72 times than the PIR sensor with pure NMOSFET respectively. In addition, we use these results to fabrication 1-D 9 element pure PIR sensor. The voltage response is 128 VW-1 and the specific detectivity is 2.67 ×107 cmHz1/2W-1 at 0.8 Hz. From result it can be use to IR scanner.
Lin, Cing-Wen, and 林清文. "A Study of Application of Pyroelectric Infrared Sensor to Energy Saving of Air Conditioning System." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/90362735088945733357.
Повний текст джерела國立勤益科技大學
冷凍空調系
102
As the global climate change and environmental awareness rise, various energy-saving products and energy-saving control techniques come out accordingly, such as electromechanical control system integration, air conditioning energy-saving control system and lighting energy-saving control system, which are common energy-saving control modes. This study uses the characteristic of detecting human body of Pyroelectric Infra-Red (PIR) Motion Detector to sense the persons' activities in environmental space to control the start and stop of air conditioning system and lighting system, so as to save energy. It was found in the research process that the pyroelectric infrared sensor was very sensitive to human detection, but it was very likely to be influenced by many factors, such as ambient temperature, wind speed, solar irradiation, heater and so on, resulting in misoperation. To reduce the influence of these interference factors, the hardware line processing of design analog quantity sampling, filter line and amplification gain in electronic circuit must be strengthened, and the basic relevance between persons' activities and sampling sensitivity shall be discussed by data analysis for optimum control, so as to prevent misoperation. After multiple corrections in the circuit design and logical processing method of software, the high sensitivity and a low false alarm rate are achieved. It is also controlled with the start and stop of the air coolers and lighting equipment. In the office air-conditioning start and stop control experiments, the energy consumption saving of the two vertical air coolers is approximately 13% and 8% respectively; and that of the ceiling-and-recessed air cooler in the mains room is approximately 37%. In the mains-room lighting equipment start and stop control experiment, the energy consumption saving of lighting equipment is approximately 29.6%, having achieved the goal of this study.
Wen, Shih-Ta, and 溫世達. "A Study of Thermal Insulated Structure for (Pb,Ca)TiO3 Pyroelectric Thin Film Infrared Image Sensors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/81850755890949390645.
Повний текст джерела國立臺灣海洋大學
電機工程學系
95
Abstract In this experiment, the pyroelectric Pb0.7Ca0.3TiO3, (PCT) film is deposited on the silicon substrate through the Radio-Frequency Magnetron Sputtering System and the integrated pyroelectric film infrared image detector is manufactured. For contrast of corresponding characteristics, two types of integrated pyroelectric film infrared image detectors with different thermal insulation structures are fabricated. Moreover, the measurement and analyses of thermal image is made with the finished pyroelectric infrared array detector. As regards the nano-level porous silica film, the porosity and the thermal conductivity coefficient of the porous film are 76% and 24.76(mW/m-K) respectively according to measurement and calculation. For the PCT film, the film, through the SEM, AFM and XRD experiments, shows ideal features after a 15-minute annealing process at a temperature of 650℃. For measurement of the electric characteristics of the device, the remanent polarization quantity and the coercive field are 1.86μC/cm2 and 32.5kV/cm respectively for the non-insulated structure, 5.59μC/cm2 and 37.5kV/cm for the suspended-etching structure, and 22.5μC/cm2 and 47.5kV/cm for the aerogel insulation structure. The pyroelectric coefficient for those three structures is 9.32□10-4 C/m2K, 14.31□10-4 C/m2Kand 15.96□10-4 C/m2K at a temperature of 110℃. Thus, it can be clearly seen that the electric characteristics of the devices with thermal insulation structures are substantially improved. For characteristics of the device, the voltage response of a single detector is maximal at the chopping frequency of 0.5Hz: 500V/W for the non-insulated structure, 660.79V/W for the suspended-etching structure, and 672.65V/W for the aerogel insulation structure. The maximal specific defectivity for those three different structures is 6.02 105 (cmHz1/2W-1), 25.14 105 (cmHz1/2W-1), and 30.58 105 (cmHz1/2W-1). In this study, the two-dimensional 32×32 pyroelectric infrared image detectors that meet the above-mentioned results are fabricated, and the thermal image detecting results by several arrays that are composed of these detectors with different thermal insulation structures are contrasted & analyzed. Key words: infrared thermal image detector, PCT, remanent polarization quantity, coercive field, pyroelectric coefficient, voltage response, and specific detectivity.
Liou, Jean-Chung, and 劉健群. "The Study Of Integrated Pyroelectric Infrared Sensor Using PZT Thin Film and MOSFETs on Silicon Diaphragm." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/50400694139792134746.
Повний текст джерела國立海洋大學
電機工程學系
87
Abstract In this paper the integrated pyroelectric infrared sensors have been made by using a Lead-Zirconate-Titanate (Pb(Zr0.52Ti0.48)O3,PZT) thin film and metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon diaphragm . The performance of the sensor is analyzed in different temperature and filter window measurement. According to the experimental results, the PZT deposition rate is 0.25m/hr at the temperature is 350C , and annealing temperature 650C 15 minutes . A PZT thin film with the perovskite structure is used to fabricate the PIR sensor . From the XRD measurement , the fabricated PZT thin film is a perovskite structure . In the electric measurements, the dielectric constant is 698 and loss tangent is 0.6 at the frequency of 1KHz. From the hysteresis loop, its remanent polarization(Pr) is 17.5C/cm2, and its saturation polarization is 35C/cm2. The coercive electric field is 55.7KV/cm. The performance of the depletion type MOSFET PIR sensor at low temperature(423K) and with the germanium filter is that its voltage response is 1840VW-1 and its specific detectivity is 2.475×108 cmHz1/2W-1 at 20 Hz . The higher black body temperature, the detectivity of the PIR sensor is reduced. On the other side, its detectivity is enhanced with Si or Ge filter. When the enhancement MOSFET PIR sensor is measured at low temperature(423K) and with the germanium filter, its maximum voltage response is 2590VW-1 and its specific detectivity is 2.55 ×108 cmHz1/2W-1 at 20 Hz . The higher black body temperature, the detectivity of the PIR sensor is reduced. On the other side, its detectivity is enhanced with Si or Ge filter also .
Wu, Chang-Lin, and 吳昌陵. "A Study of High-sensitivity (Pb,Ca)TiO3 Pyroelectric Thin Film Infrared Thermal Array Image Sensor." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/89526074781932787196.
Повний текст джерела國立臺灣海洋大學
電機工程學系
96
In this experiment, the pyroelectric Pb0.7Ca0.3TiO3, (PCT) film is deposited on the silicon substrate through the Radio-Frequency Magnetron Sputtering System and the integrated pyroelectric thin film infrared image detectors with three different MOSFET structures are fabricated and the measurement results of relevant characteristics are compared. At last, the measurement and analyses of thermal image is made with the finished pyroelectric MOSFET infrared array detector. From the measurement of I-V characteristic curve for three different detectors, it is found that, the separate gms of Pt/PCT/Si, Pt/PCT/ SiO /Si and Pt/PCT/Pt/Ti/SiO /Si are 0.433mA/V, 0.291mA/V and 0.158 mA/V. As regards the PCT film, it shows ideal features after a 15-minute annealing process at a temperature of 650℃ according to the experiments of SEM、AFM and XRD diffraction. For measurement of the electric characteristics of the device, the remanent polarization quantity and the coercive field are 18.147μC/cm2 and 50kV/cm2respectively for PCT thin film. The maximal pyroelectric coefficient arrives at 1.23�e10-4 C/m2K at a temperature of 200℃. For characteristics of the devices, it shows a maximal voltage response value at the response frequency of 5Hz, 1718.02 (V/W) for Pt/PCT/Si, 1030.94 (V/W) for Pt/PCT/SiO /Si and 865.52 (V/W) for Pt/PCT/Pt/Ti/SiO /Si. The maximal normalized detectivity for those three different devices is 7.33 105 (cmHz1/2W-1)、6.19 105 (cmHz1/2W-1) and 6.61 105 (cmHz1/2W-1) with the measured frequency of maximal specific detectivity at 40Hz, 40Hz and 15Hz respectively. From the above results, we have fabricated two-dimensional 8 × 8 pyroelectric infrared image detector.
Lai, Yung-Cheng, and 賴勇成. "The Fabrication and Characterization of (Pb,Ca)TiO3 Pyroelectric Thin Film Infrared Array Thermal Image Sensors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/93644520143635615156.
Повний текст джерела國立臺灣海洋大學
電機工程學系
93
Abstract This research used the radio-frequency sputtering methods to deposit lead titanate thin film with different calcium contents on Pt/Ti/SiO2/Si substrates to form Pb1-xCaxTiO3(PCT)(X=0,0.25,0.3,0.4,0.5) thin film. The PCT thin film were added with different calcium contents and underwent annealing with temperature changes to probe the influence of the process parameters on the thin film. Further investigations include the property analysis of PIR thermal image sensor etched as V-groove structure and research on the thermal image. From the PCT thin film material analysis, we found out that it has better perovskite structure when annealed at 650�aC for 15 minutes. For the analysis of PCT thin film electrical properties, the relative permittivity and pyroelectric coefficient of PCT thin film all shows a tendency to increase when the calcium contents are increased. The coercive field and remnant polarization decrease as the calcium contents increase. When the pyroelecytric materials of the PIR sensor is PCT(30), it has maximum voltage response at 678.9(VW-1) and maximum specific detectivity at 0.299 107cmHz1/2W-1. This findings were successfully applied in producing 8X8 array PIR thermal image sensors.
吳煥堂. "The Characterization and Fabrication of Pyroelectric Infrared Sensor and Thermal Image Array with CMOS scan circuits." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/92572513933090106468.
Повний текст джерела國立海洋大學
電機工程學系
91
In this paper the integrated pyroelectric infrared sensors have been made using a Lead-Titanate (PbTiO3, PT) thin film and Ca-Modified Lead Titanate (PbCaTiO3, PCT) thin films by RF sputtering method on Silicon. In addition, the back etching technology is used to increase the sensitivity of the device. According as the technology, we can fabricate PIR array to study the distribution of thermal image. According to the XRD measurement results, the PT thin film is the perovskite structure. From the hysteresis loop, its remanent polarization (Pr) is 20.8 mC/cm2 and the coercive electric field is 79.365 KV/cm. Its pyroelectric coefficient is 5.112×10-4 C/m2K at 300℃. For the PIR performance measurement, the voltage response of the single PIR sensor is 600 VW-1 and the specific detectivity is 0.078×107 cmW-1 at 0.3 Hz. From the PbCaTiO3, according to the pyroelectric coefficient, specific detectivity and XRD measurement results, the PCT thin film is the perovskite structure and the PCT thin film at annealed 650℃for 15 minutes can obtain the better performance. From the hysteresis loop, its remanent polarization (Pr) is 23.37 mC/cm2 and the coercive electric field is 72.25 KV/cm. Its pyroelectric coefficient is 4.035×10-4 C/m2K at 300℃. For the PIR performance measurement, the voltage response of the single PIR sensor is 489.5 VW-1 and the specific detectivity is 0.0522×107 cmW-1 at 0.3 Hz. In addition, we use these results to fabricate 2-D 4x4 element PIR sensor. The sensor has been used for thermal image, test in this experiment.
An, Feng-Yuan, and 安豐沅. "The Characterization and Fabrication of Integrated PZT Thin Film Pyroelectric Infrared Sensor with Different Thickness Substrate." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/59800087826382111887.
Повний текст джерела國立海洋大學
電機工程學系
86
Lead-Zirconate-Titanate(Pb(Zr0.52Ti0.48)O3,PZT) thin film is deposited on the junction effect field transistor(JFET) with the radio frequency magnetron planer sputtering system to fabricated and analyzed. pyroelectric integrated sensors in different fabrication conditions and measurement its performance. According to the experimental results, the deposition rate is 0.35mm per hour. From the XRD pattern we know that, the structure of thin film is perovskite structure. The value of full width of half maximum(FWHM) is 0.225 and the (110) preferred orientation a is 0.15. In the electric measurements, the dielectric constant is 414 and loss tangent is 0.15 at the frequency of 1KHz. From the hysteresis loop, the remanent polarization(Pr) is 14mC/cm2, and saturation polarization is 35mC/cm2. The coercive electric field is 42.8KV/cm. In the fabrication of PIR sensor, the thickness of PZT thin film is 1.4mm and the thickness of silicon diaphragm is about 200mm. The voltage response of fabricated PIR sensor is 1200VW-1 and its specific detectivity is 1.4×108 cmHz1/2W-1. When the thickness of PZT is 1.4mm and thickness of silicon thickness maintain the same, its maximum voltage response is 520V W-1 and its specific detectivity is 4.3 ×107 cmHz1/2W-1.
Lee, Jian-Hsing, and 李建興. "The Characterization and Fabrication of Pyroelectric Infrared Sensor with CMOS Amplifier and Application of Thermal Image Array." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/32152764326512065272.
Повний текст джерела國立海洋大學
電機工程學系
90
In this paper the integrated pyroelectric infrared sensors have been made using a Lead-Titanate (PbTiO3, PT) thin film by RF sputtering method on differential CMOS amplifier. In addition, the back etching technology is used to increase the sensitivity of the device. According as the technology, we can fabricate PIR array to study the distribution of thermal image. According to the XRD measurement results, the PT thin film is the perovskite structure. From the hysteresis loop, its remanent polarization (Pr) is 20.8 C/cm2 and the coercive electric field is 79.365 KV/cm. Its pyroelectric coefficient is 5.112×10-4 C/m2K at 300℃. For the PIR performance measurement, the voltage response of the single PIR sensor is 600 VW-1 and the specific detectivity is 0.078×107 cmW-1 at 0.3 Hz. The voltage response of the CMOS PIR sensor is 1178.31 VW-1 and the specific detectivity is 1414.21 cmW-1 at 0.3 Hz. In addition, we use these results to fabricate 2-D 4x4 element PIR sensor. The sensor has been used for thermal image, test in this experiment.
Hsieh, Chin-Teng, and 謝金騰. "A Study of Thermal Imaging System with 128x128 Pixels Pyroelectric Film Infrared Array Sensors and Microcontroller Unit." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/4w25j8.
Повний текст джерела國立臺灣海洋大學
電機工程學系
103
This study uses the photolithography and etching process, along with the sputtering system, to manufacture the MEMS of metal-oxide semi-structured array infrared sensor element. The process of devices include the deposition oxide layer process, source and drain diffusion window etching process, phosphorus diffusion process, gate diffusion barrier etching process, buffer layer process, pyroelectric layer process, source and drain diffusion barrier etching process, drain and gate electrode process, interleaved electrode insulating layer, and source electrode process. Pyroelectric layer is deposited using the RF magnetron sputtering method and then annealed at 650°C for 15 minutes.The pyroelectric coefficient of annealed pyroelectric layer is 1.3x10-3C/m2K and the dielectric coefficient of annealed pyroelectric layer is 330. The study uses a halogen bulb as the source to measure pixel properties of 128x128 array.The maximum responsivity is reached at 1Hz, and the specific detectivity is 1.13x105cmHz1/2W-1. In terms of image scanning system measurement, lens are used to focus the halogen light, and Arduino mega 2560 microcontroller is also used during the process. Circuit is measured by interleaved measurement method with MCP23018 providing the drain voltage and 74HC4067 analyzing analog signals. The data is then converted into digital signals through 8bits ADC of Atmega2560. The data is linked to a computer through VISA(RS-232). The scan time for one row is 0.3s. Results are delivered by Labview SCADA program in the form of intensity scale. Keywords: pyroelectric effect, surface modification, interleaved electrodes, specific detectivity, microcontroller measurement system.
Lee, Rong Bin, and 李榮斌. "Low temperature preparation of calcium-modified lead titanate thin films for pyroelectric infrared radiation sensor by laser annealing." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/47290311196563199642.
Повний текст джерела國立臺灣科技大學
材料科技研究所
92
Abstracts The techniques of X-ray diffraction, scanning electron microscopy, ferroelectric properties examining, dielectric testing and pyroelectric measuring have been applied to the analysis of thin film Pb1-xCa x TiO3 (PCT) with various Pb/Ca ratio deposited at low temperature and a sequentially post furnace annealing treatment by Sol-Gel process onto Pt/Ti(Si) substrate. In this study, presence detector using thin film Au/PCT/Pt(Si) capacitor as well as IR detector design and detector characteristics by analysis of the figure of merits characterizing pyroelectric coefficient sensitivity, microstructures and electrical properties of thin film PCT are discussed. It is found that the degraded electrical properties and deteriorating interface condition of PCT thin films is intimately correlate with its ferroelectric, pyroelectric and dielectric properties due to high temperature and long soak time material preparation process. With this point of view, a novel cw-CO2 laser annealing technique with short laser irradiation time (down to 15 sec) was developed to fabricate ferroelectric PCT thin films. The experimental results showed that increasing Pr (rememant polarization), pyroelectric coefficients and dielectric constants of PCT7030 thin films were obtained by using the laser annealing technique substituting conventional furnace annealing treatment. The pyroelectric coefficient increases from 35.1 nC/cm2.K to 45.271 nC/cm2.K and reaches a 22.5% deviation and Pr increases from 10.99 μC/cm2 to 18.22 μC/cm2 by using a laser annealing treatment, respectively. In addition, the preferred (100) orientation of the PCT7030 thin film increased and fine and dense grain were obtained with increasing laser irradiation time. With a laser annealing time of 15 sec, the degree of preferred (100) orientation of PCT thin film reaches 91% indicating enhancement of the ferroelectric properties and dielectric constants improved pyroelectric properties of PCT using laser annealing technique. A flexible pyroelectric composite with 0-3 connectivity, made from PCT Sol-Gel solution, was doped with small amount of low dielectric Al2O3 powder with a view on obtaining 0-3 PCT-Al2O3 composite with higher sensitivity and low dielectric constants to meet the requirement of a pyroelectric sensing device. The enhanced 2∼3 times of figure of merits was obtained with the PCT Sol-Gel solution at addition 28.6, 37.5 and 44.4 mole% amount of Al2O3 powder. At this composition, the lowering dielectric constants of PCT-Al2O3 composite was achieved to agree the requirement of pyroelectric sensing device, and no second phase in the PCT matrix was observed due to the relatively high Al2O3 addition. In summary, an alternative CO2 laser annealing technique was well developed with advantages of short annealing time, selective annealing area, low interface defects density to fabricate PCT thin films in the microelectronic deice application with well crystallinity and good quality electrical properties.
Wei, Wei-Chia, and 魏嘉韋. "A study of High Sensitivity 128×128 Pixels Infrared Detectors Based On (Pb,Ca)TiO3 Pyroelectric Thin Films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/a27d52.
Повний текст джерела國立臺灣海洋大學
電機工程學系
101
In this paper, MEMS process technology is used to prepare integrated 128×128 pixels infrared detector. The detector architecture associates pyroelectric thin film and metal oxide semiconductor field effect transistor. Meanwhile, at the oxide layer of gate, double layer Sol-gel composite thin film is used to reduce thermal conductivity and increase the thin film planarity, finally, the sensitivity of the infrared detector is improved. In the selection of the infrared detector material, in order to achieve the parameter and characteristic of good pyroelectric thin film, target material proportion of Pb0.7Ca0.3TiO3 is adopted, meanwhile, RF magnetron sputtering system is used to deposit pyroelectric thin film on double layer Sol-gel thin film, the depositing parameters are: room temperature, sputtering power of 3.7 W/cm2, pressure of 10 mtorr, and finally, the deposited thin film is annealed to obtain complete thin film. In the detectors characteristic aspect, this research has measured I-V characteristic curve and obtain gm value of the device to be 259 mS/mm, in the pyroelectric characteristic aspect, at temperature of 122.6 ℃, the measured result shows highest pyroelectric coefficient of 15.4610-4 C/m2K. For Pb0.7Ca0.3TiO3 thin film, the remanent polarization is 55 μC/cm2, and the coercive electric field is 12.5 kV/cm. In the device response measurement aspect, this experiment has used black body as signal source to measure infrared sensor device, hence, when the response frequency is 1Hz, the maximal voltage response is 1.32x105 V/W, specific detectivity is 5.93x106 cmHz1/2W-1.
Liao, Wei-Shun, and 廖偉舜. "A Study of High-sensitivity Thermal Insulated(Pb﹐Ca)TiO3 Pyroelectric Thin Film Infrared 64×64 Array Sensors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/80541718186548873404.
Повний текст джерелаLo, Hao-Yu, and 羅皓佑. "A Study of 64×64 Pixels Thermal Insulated Structure for (Pb,Ca)TiO3 Pyroelectric Thin Film Infrared Image Sensors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/50691113625312903679.
Повний текст джерела國立臺灣海洋大學
電機工程學系
96
Abstract In this experiment, pyroelectric Pb0.7Ca0.3TiO3, (PCT) film is deposited on silicon substrate through the Radio-Frequency Magnetron Sputtering System and the integrated pyroelectric film infrared image detector is manufactured. For contrast of corresponding characteristics, two types of integrated pyroelectric film infrared image detectors with different thermal insulation structures are fabricated. Moreover, the measurement and simulated analyses of the thermal image is made with the finished pyroelectric infrared array detector. Regarding the nanoporous silica film, without surfactants aerogel, the porosity and the thermal conductivity coefficient of the porous film are 76% and 24.76(mW/m-K); compared with the addition of surfactants aerogel, the porosity and the thermal conductivity coefficient of the porous film are 81% and 19.87(mW/m-K) respectively, according to measurement and calculation. For the PCT film, the film, from the SEM, AFM and XRD experiments, shows ideal features after a 15-minute annealing process at a temperature of 650℃. For measurement of the electric characteristics of the device, the remanent polarization quantity and the coercive field are 21.5μC/cm2 and 100kV/cm respectively without the surfactants aerogel structure; 25μC/cm2 and 112.5kV/cm when compared with the addition of surfactants aerogel structure. Along with the addition of surfactants of aerogel, all of the remanent polarization quantity and the coercive field trends have obviously risen. Regarding the pyroelectric coefficient, it can be clearly seen that the pyroelectric coefficient with thermal insulation structures are substantially improved. In view of the measurement of the device characteristics, a comparison between the PCT thin film that has been added in with surfactant and the one without any added surfactant has been done, the sensor presents larger voltage response within the frequency range of 2Hz to 7Hz and shows smaller noise voltage and noise equivalent power in the frequency range of 3Hz to 11Hz; it also manifests bigger detection rate and naturalized detection rate within the frequency range of 0.2Hz to 8Hz. On the whole, it could acquire better infrared characteristics for the aerogel with added surfactant. As a result of the above mentioned, we finished the two-dimensional 64*64 pyroelectric infrared detectors. At the same time, we compared them with the addition of surfactants of aerogel thermal insulation structure detectors that formed with the heat detectors and analyzed the advantages and disadvantages. Key words: Infrared Thermal Image Detector, PCT, Residual Polarization Quantity, Coercive Field, Pyroelectric Coefficient, Voltage Response, Specific Detectivity, Surfactant, Nanoporosity
劉汶錦. "A Study of Thermal Imaging System with Scanning Circuit and 128x128 (Pb,Ca)TiO3 Pyroelectric Thin Film Infrared Array Sensor." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/83972517467462641074.
Повний текст джерела國立臺灣海洋大學
電機工程學系
101
In this paper, MEM process technology is used to prepare pyroelectric PbCaTiO3 128×128 pixel infrared sensor device, and pyroelectric thin film and metal oxide semiconductor field effect transistor are associated. Moreover, home-made readout circuit is used and the interlaced electrode layout way is improved in the design, finally, 128×128 pixel infrared thermal image scanning sensor system is set up and integrated. In this paper, pyroelectric material characteristic is associated with MOSFET device characteristic, and ferroelectric ceramic material Pb0.7Ca0.3TiO3 target material with pyroelectric characteristic is adopted to achieve good pyroelectric thin film parameter and characteristic. Moreover, RF magnetron sputter system is used to deposit pyroelectric thin film on the insulated thin film of gate electrode of FET, then through annealing treatment, the needed pyroelectric thin film can be obtained. In the pyroelectric thin film device characteristic part, the remanent polarization of Pb0.7Ca0.3TiO3 thin film is 20 μC/cm2, and coercive electric field is 15 kV/cm; from the measured I-V curve, the transconducatance gm obtained is 0.28 mA/V. In this paper, black body furnace is used as signal source to measure infrared sensor device, when the frequency reached is 1Hz, it will have the largest voltage response of 1.37x105 V/W, and device response time is 58.8ms, and normalized detectivity is 5.96x106 cmHz1/2W-1. In the image scanning system measurement aspect, lens is used to focus the halogen optical source onto 2.2cm 2.2cm 128x128 pixel sensor device, together with readout circuit, light illuminated signal is converted into digital signal to be transferred to be read by program in computer end. In the circuit preparation part, OrCAD and Allegro software is used in the design to prepare the circuit board. In the circuit readout design, in order to reach the goal of circuit miniaturization, serial port I/O is adopted to expand IC, and in the readout circuit MCU, the expansion IC of MX7300AAX is controlled through I2C way. Readout command will send the sensor signal to IC, then voltage level reading method will be used to read it, then the data will be sent to the computer end through UART, eventually, Labview program will be used to display the image to finish the infrared dynamic image measurement.
Rego, Barcena Salvador. "A Passive Mid-infrared Sensor to Measure Real-time Particle Emissivity and Gas Temperature in Coal-fired Boilers and Steelmaking Furnaces." Thesis, 2008. http://hdl.handle.net/1807/11251.
Повний текст джерела