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Готові списки джерел за темами / Pt/CdTe/Pt / Статті в журналах

Статті в журналах з теми "Pt/CdTe/Pt"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Khatei, Jayakrishna, and K. S. R. Koteswara Rao. "Pt/CdTe/Pt asymmetric nano-Schottky diodes from colloidal quantum dots." AIP Advances 1, no. 4 (December 2011): 042166. http://dx.doi.org/10.1063/1.3669408.

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2

Ling, Jun, Xulei Zhang, Ting Mao, Lei Li, Shilin Wang, Meng Cao, Jijun Zhang, et al. "Electrodeposition of CdTe Thin Films for Solar Energy Water Splitting." Materials 13, no. 7 (March 27, 2020): 1536. http://dx.doi.org/10.3390/ma13071536.

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CdTe thin films have been prepared by electrochemical deposition. The morphological, structural, and optical properties of CdTe thin films deposited with different deposition time were investigated, and the influence of film thickness on the photoelectric characteristics of CdTe thin films was studied. At the deposition time of 1.5 h, CdTe thin films had good optical properties and the photocurrent reached 20 μAcm−2. Furthermore, the Pt/CdS/CdTe/FTO structure was prepared to improve its PEC stability and the photocurrent of 240 μAcm−2 had been achieved.

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3

Turturici, A. A., L. Abbene, J. Franc, R. Grill, V. Dědič, and F. Principato. "Time-dependent electric field in Al/CdTe/Pt detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 795 (September 2015): 58–64. http://dx.doi.org/10.1016/j.nima.2015.05.057.

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4

Ren, Lu-Lu, Hao Dong, Ting-Ting Han, Yun Chen, and Shou-Nian Ding. "Enhanced anodic electrochemiluminescence of CdTe quantum dots based on electrocatalytic oxidation of a co-reactant by dendrimer-encapsulated Pt nanoparticles and its application for sandwiched immunoassays." Analyst 142, no. 20 (2017): 3934–41. http://dx.doi.org/10.1039/c7an01231d.

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5

Abbene, L., G. Gerardi, A. A. Turturici, S. Del Sordo, and F. Principato. "Experimental results from Al/p-CdTe/Pt X-ray detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 730 (December 2013): 135–40. http://dx.doi.org/10.1016/j.nima.2013.03.016.

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6

Principato, F., A. A. Turturici, M. Gallo, and L. Abbene. "Polarization phenomena in Al/p-CdTe/Pt X-ray detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 730 (December 2013): 141–45. http://dx.doi.org/10.1016/j.nima.2013.05.157.

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7

Cordes, H., and R. Schmid-Fetzer. "The role of interfacial reactions in Pt/CdTe contact formation." Semiconductor Science and Technology 9, no. 11 (November 2, 1994): 2085–96. http://dx.doi.org/10.1088/0268-1242/9/11/009.

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8

Turturici, A. A., J. Franc, R. Grill, V. Dědič, L. Abbene, and F. Principato. "Electric field manipulation in Al/CdTe/Pt detectors under optical perturbations." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 858 (June 2017): 36–43. http://dx.doi.org/10.1016/j.nima.2017.03.041.

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9

Sousa, José Hugo de Aguiar, Paulo Herbert França Maia Junior, Álvaro Neuton de Araújo Silva, Francisco Marcone Lima, Francisco Wendel Cipriano de Oliveira, Rafael Aragão Magalhães, Francisco Nivaldo Aguiar Freire, and Emerson Mariano da Silva. "Caracterização da eletrodeposição de filmes finos de CdTe sobre Pt em meio ácido." Matéria (Rio de Janeiro) 20, no. 4 (December 2015): 866–81. http://dx.doi.org/10.1590/s1517-707620150004.0093.

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RESUMO A eletrodeposição tem sido empregada para a obtenção de materiais semicondutores; todavia, ainda não estão bem esclarecidos os mecanismos envolvidos neste processo. Neste sentido, este trabalho apresenta a investigação deste processo, evidenciando a caracterização do CdTe eletrodepositado sobre substrato platina em solução ácida. A deposição ocorre a partir de 0,0 V, em relação ao eletrodo Ag/AgCl,KClsat, com etapas de controle ativado e de difusão. Os filmes finos de CdTe foram eletrodepositados sobre o substrato de platina a temperatura ambiente (~24°C) a partir de uma solução ácida. A influência do potencial aplicado foi investigada utilizando técnicas de caracterização de superfície, como a difração de raios X e Microscopia eletrônica de varredura. A caracterização elétrica foi realizada por medidas de capacitância (Mott-Schottky). Os filmes finos de CdTe apresentaram pico de maior intensidade no plano (220), demostrando ter um crescimento preferencial para esse plano. Os filmes apresentam uma morfologia granular influenciado pelo potencial de deposição e uma condutividade característica de um semicondutor tipo n.

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10

Seino, Tomoyuki, Takafumi Ishitsu, Yuichiro Ueno, and Keiji Kobashi. "Biparametric correction methods using two shapers for In/CdTe/Pt radiation detector." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 629, no. 1 (February 2011): 170–74. http://dx.doi.org/10.1016/j.nima.2010.11.033.

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11

Raulo, A., M. Sowinska, G. Hennard, L. Campajola, D. Marano, G. Paternoster, and E. Perillo. "Pt-CdTe Detectors Spectroscopic Performances and RBS and XRF Interface Composition Analysis." IEEE Transactions on Nuclear Science 59, no. 4 (August 2012): 1491–96. http://dx.doi.org/10.1109/tns.2012.2200263.

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12

Principato, F., G. Gerardi, A. A. Turturici, and L. Abbene. "Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors." Journal of Applied Physics 112, no. 9 (November 2012): 094506. http://dx.doi.org/10.1063/1.4764325.

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13

Vasylchenko, Igor, Roman Grill, Marián Betušiak, Eduard Belas, Petr Praus, Pavel Moravec, and Pavel Höschl. "In and Al Schottky Contacts Comparison on P-Type Chlorine-Doped CdTe." Sensors 21, no. 8 (April 15, 2021): 2783. http://dx.doi.org/10.3390/s21082783.

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The performance of the CdTe radiation detectors heavily relies on the method of contact preparation. A convenient research method addressing this problem is the laser-induced transient current technique. In this paper, we compare the performance of two CdTe crystals which underwent different metallization processes. We showed that appropriately designed Au/Al contacts induce much less bulk polarization than commercial Pt/In electrodes under the same working conditions and can thus provide a convenient alternative to the industry standard. The comparison was based on the monitoring of the time-dependent sensor polarization measuring transient currents excited by above-bandgap laser illumination complemented by the Am 241 gamma spectroscopy. The theoretical analysis of current waveforms and radiation spectra enabled us to determine the charge carrier mobility, mobility-lifetime products of electrons and holes, and temporal and bias dependence of the space charge formation.

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14

Distefano, P., M. Maraschi, D. Macera, B. Garavelli, M. Sammartini, G. Bertuccio, and G. Ghiringhelli. "Bias polarization characterization of Al/CdTe/Pt Schottky X-ray detector for industrial applications." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1019 (December 2021): 165902. http://dx.doi.org/10.1016/j.nima.2021.165902.

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15

Wahi, A. K., K. Miyano, G. P. Carey, T. T. Chiang, I. Lindau, and W. E. Spicer. "Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (May 1990): 1926–33. http://dx.doi.org/10.1116/1.576784.

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16

Sklyarchuk, V., Z. Zakharuk, S. Solodin, A. Rarenko, O. Sklyarchuk, P. Fochuk, A. Bolotnikov, and R. B. James. "Effect of the Electric Field Strength on the Energy Resolution of Cr/CdTe/Pt Detectors." IEEE Transactions on Nuclear Science 67, no. 11 (November 2020): 2439–44. http://dx.doi.org/10.1109/tns.2020.3026259.

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17

Sedlačková, Katarína, Bohumír Zaťko, Márius Pavlovič, Andrea Šagátová, and Vladimír Nečas. "Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors." International Journal of Modern Physics: Conference Series 50 (January 2020): 2060017. http://dx.doi.org/10.1142/s2010194520600174.

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High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.

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18

Yamazato, Masaaki, Akira Higa, Yasumasa Fukuhara, Hiroyuki Toyama, Satoru Yamanoha, Ikumi Owan, Ryoichi Ohno та Minoru Toguchi. "Improvement in γ-ray Detection Quality of Al/CdTe/Pt Schottky-Type Radiation Detector by Sulfur Treatment". Japanese Journal of Applied Physics 45, No. 47 (24 листопада 2006): L1263—L1265. http://dx.doi.org/10.1143/jjap.45.l1263.

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19

Roumié, M., M. Hageali, K. Zahraman, B. Nsouli, and G. Younes. "Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 219-220 (June 2004): 871–74. http://dx.doi.org/10.1016/j.nimb.2004.01.179.

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20

Assem, E. E., A. Ashour, E. R. Shaaban, and A. Qasem. "Implications changing of the CdS window layer thickness on photovoltaic characteristics of n-CdS/i-AgSe/p-CdTe solar cells." Chalcogenide Letters 19, no. 11 (November 21, 2022): 825–39. http://dx.doi.org/10.15251/cl.2022.1911.825.

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Rietveld refinement techniques have been used to investigate the structural characteristics of CdS window layers at various thicknesses in the current study. The structural parameters were improved as the thickness of the CdS-layer was raised, according to XRD patterns. This, in turn, was owing to the increase in the crystal's size for the studied thin layers. For the Ni/n-CdS/i-AgSe/p-CdTe/Pt heterojunction that was successfully fabricated employing an AgSe buffer layer deposited directly on the p-CdTe absorber layer and then the CdS window layer deposited on these mentioned layers, the photovoltaic properties were determined under the dark and illuminated conditions. In dark conditions, from the forward and reverse (current-voltage) data, the essential behavior related to the fabricated devices has been determined. In addition, the heterojunction resistance, the shunt resistance, the series resistance and the rectification rate were all determined. As well, in the illumination case, the open-circuit voltage, the short-circuit current, the fill factor, the power conversion efficiency, (PCE), the photoresponsivity, the quantum efficiency, the dependence of generated photocurrent on the light intensity, the dependence of generated photocurrent on wavelength (λ) for the studied solar cells have been computed and discussed.

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21

Odkhuu, Dorj, Mao-sheng Miao, F. Aqariden, Christoph Grein, and Nicholas Kioussis. "Atomic and electronic structure of CdTe/metal (Cu, Al, Pt) interfaces and their influence to the Schottky barrier." Journal of Applied Physics 120, no. 18 (November 14, 2016): 185703. http://dx.doi.org/10.1063/1.4966931.

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22

Sun, K. "Cs-corrected STEM Study of Structure and Chemistry of Au/Ni/GaAs, Au/Cu/CdTe and Pt/YSZ Interfaces." Microscopy and Microanalysis 16, S2 (July 2010): 1456–57. http://dx.doi.org/10.1017/s1431927610060228.

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23

Liu, Fang, Yan Zhang, Chengchao Chu, Juanjuan Lu, Jinghua Yu, and Xianrang Song. "Au–Pt nanoparticle-based electrochemiluminescence immunoassay of a cancer biomarker using ZnO nanospheres coated with CdTe quantum dots as labels." Monatshefte für Chemie - Chemical Monthly 145, no. 1 (May 8, 2013): 121–27. http://dx.doi.org/10.1007/s00706-013-0993-8.

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24

Sebak, M. A., S. Ghalab, Atef El-Taher, and E. R. Shaaban. "Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications." Chalcogenide Letters 19, no. 6 (June 2022): 389–408. http://dx.doi.org/10.15251/cl.2022.196.389.

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"The structural and optical properties of CdS window layer at different thicknesses in the range of (100-300 nm) deposited on pre-cleaned glass substrates (CdS/glasses) via the thermal evaporation process are studied in the current work. The structural analysis is done using Rietveld refinement and atomic pressure microscope techniques. The films of CdS/glass showcase a wurtzite behavior. XRD and AFM tests are confirmed that the structural parameters improve as the thickness of the CdS-layer increases. The optical constants (the refractive index n, the extinction coefficient, k and the bandgap energy values are estimated from spectroscopic ellipsometry (SE) via the construction of an optical model. The refractive index of the CdS/glass films increases with the increase of CdS-layer thickness. This, in turn, is due to the rise of the size of the crystal in the thin layers. It is also found that as the thickness of the CdS-layer rises, so does the overall behavior of the extinction coefficient. Additionally, the bandgap energy of the direct transition decreases from 2.45 eV (d=100 nm) to 2.25 eV (d=300 nm). The dark and illumination I-V photovoltaic characteristics of fabricated devices are explored by depositing a p-CdTe thin layer (500 nm) over varying thicknesses of CdS thin films (100- 300 nm) prepared on glass substrates (2 mm) and thus, the Ni/n-CdS/i-AgSe/p-CdTe/Pt heterojunction has been successfully fabricated with an AgSe buffer layer deposited directly on the p-CdTe absorber laryer. The n-CdS window layer is deposited on i-AgSe buffer layer. In dark conditions, based on the dependence of the forward and reverse current-voltage, the essential behavior related to the fabricated diode has been determined. As well, in the illumination case, the open-circuit voltage, the short-circuit current, the fill factor, the power conversion efficiency, (PCE), photoresponsivity, quantum efficiency, dependence of generated photocurrent on the light intensity, dependence of the generated photocurrent on wavelength (λ)for the studied solar cell are computed and discussed."

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25

Marchelek, M., E. Grabowska, T. Klimczuk, W. Lisowski, and A. Zaleska-Medynska. "Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light." Applied Surface Science 393 (January 2017): 262–75. http://dx.doi.org/10.1016/j.apsusc.2016.10.009.

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26

Lyons, LE, and TL Young. "On the Flat-Band Potential and the Frequency Dispersion of Capacitance and Its Removal in an Normal-Cadmium Telluride in Alkaline Selenide, Polyselenide Photoelectrochemical Cell." Australian Journal of Chemistry 39, no. 2 (1986): 347. http://dx.doi.org/10.1071/ch9860347.

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When seepage of the electrolyte between the semiconductor crystal and its insulation was prevented, the equivalent series capacitance CS of an n-CdTe|Se2-, Sen2-,OH-|Pt cell was almost independent of frequency (<2% increase of CS per decade decrease of frequency) in the range 104-2 Hz. Attributing CS wholly to the space-charge capacitance resulted in a linear Mott- Schottky plot and this yielded a flat-band potential of -2.0�0.1 V v . s.c.e . and a built-in potential of 1.08�0.06 V. This was consistent with the observed current-voltage curves in both dark and light. Two conditions under which frequency dispersion was observed were (a) electrolyte seepage and (b) surface damage. The insulating techniques which allowed seepage were similar to those of other workers. The effects of these imperfections on the Mott- Schottky plot are considered. Attempts to extract useful information from frequency dispersion data showed that it is difficult or impossible to obtain a unambiguous equivalent circuit solely on the basis of goodness-of-fit of calculated to observed impedances. The ambiguity can be removed only when sufficient information beyond impedance-frequency data is available. For electrodes with seepage, a model due to Tomkiewicz led to the correct value of the built-in potential.

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27

Lyons, LE, GC Morris, NA Raftery, and TL Young. "Photoelectrochemical Cells With Single-Crystal Cadmium Telluride and Alkaline Telluride, Ditelluride Redox Couple." Australian Journal of Chemistry 40, no. 4 (1987): 655. http://dx.doi.org/10.1071/ch9870655.

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In the photoelectrochemical cell Ga -In /n- CdTe (single crystal) 0.1 M Te2- , Te22-, OH- /Pt the efficiency of energy conversion of solar radiation (AM2 spectral distribution, 58 mW cm-2 was increased from the previously reported 5% to 9.0%, by etching the polished crystal surface, by making [Te2-] as large as practicable by using KOH as the supporting electrolyte, and by optimizing [Te22- At reduced irradiances the energy conversion efficiency was higher. At AM2, an efficiency of 14% is predicted to be attainable. Etching with chromic acid (Na2Cr2O7 in 3M HNO3) increased the open-circuit voltage in 0.1 M partly oxidized Na2Te, 5 M KOH, to 0.74 V from 0.48 V as observed on the polished but unetched crystal, and increased the short-circuit photocurrent density Jsc from 4 mA cm-2 to 13 mA cm-2 (AM2 spectral distribution, 58 mW cm-2. Etching reduced the surface defect concentration as recorded by two-beam photocurrent spectroscopy. For redox potentials Eredox more negative than - 1.12 V v . s.c.e . the crystal potential at open circuit Ec,oc was independent of the value of Eradox which was varied by changing [Te22-]; a change in Eredox therefore produced a quantitatively similar change in the open-circuit photovoltage Uoc (both at 1 mWcm-2 of 633 nm radiation and at AM2 solar radiation) and so Fermi-level pinning did not occur. Uoc was proportional to In Jsc . The very negative value of - 1.86 V v . s.c.e . observed for Ec,oc was attributed to adsorbed anionic charge, estimated as c.1013 elementary charges cm-2, which gave rise to a potential drop of 1.5 V across the Helmholtz layer.

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28

Almohammedi, A., and E. R. Shaaban. "Spectroscopic ellipsometry and photovoltaic characteristics for n-CdS/p-Cu2ZnSnS4 heterojunction by annealing for solar cells." Chalcogenide Letters 19, no. 10 (October 25, 2022): 701–14. http://dx.doi.org/10.15251/cl.2022.1910.701.

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Owing to its direct bandgap in the range to be used as an absorbent material and due to its high absorption rate, kesterite Cu2ZnSnS4 (CZTS) is a p-type prospective absorber material (with thickness 500 nm) for solar cell applications. Kesterite Cu2ZnSnS4 (CZTS) thin films were prepared using the thermal evaporation technique. The (CZTS) thin films were annealed at different annealing temperatures chosen according to TGA analysis in the range of (400o C, 450o C, 475o C, and 500o C). The influence of annealing temperatures on the structural, morphology and optical properties of the CZTS films was investigated. The XRD patterns and Raman spectra have revealed the formation of CZTS thin with a high-quality crystal structure. The optical constants refractive index n, and extinction coefficient, k consequently band gap are estimated from SE via construction an optical model. The refractive index n of the CZTS /glass films received from SE model increases with the annealing temperature that is credited to the rise of the size of the crystal. It was also found that when the annealing temperature of the CZTS layer increases, the general behavior of the extinction coefficient k of the CZTS /glass film increases. In addition, it is found that the direct optical transition with energy band gap is compact from 1.75 eV at RT to 1.49 eV at maximum crystallization 500 o C. The Ni/n-CdSe/p-CdTe/Pt heterojunction has been successfully assembled. The dark and illumination (currentvoltage) behavior of fabricated heterojunctions had been suggested at distinctive different annealing of CZTS layer, as well as for voltages ranging from -2 to 2 volts.

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29

da Costa, Karolayne, Uéslen Rocha, Tasso Sales, and Josué Santos. "Bioconjugation Between CdTe Quantum Dots and a Cationic Protein: An Analytical Method to Determine Protamine in Drug and Urine Samples." Journal of the Brazilian Chemical Society, 2021. http://dx.doi.org/10.21577/0103-5053.20210016.

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CdTe quantum dots (QD-CdTe) functionalized with mercaptosuccinic acid (MSA) were synthesized in an aqueous medium, varying synthesis time from 0.5 to 4 h. The nanoprobe were characterized by a direct relationship between synthesis time and QD size (2.61-3.04 nm). The QD-CdTe-MSA interacted with protamine (PT), a cationic protein, forming a bioconjugate, thus quenching the photoluminescence intensity and generating an on-off system. The nanoprobe produced at a synthesis time of 1 h (QD-CdTe1) presented PT’s best sensitivity in a succinate buffer (pH = 5). Under the optimized conditions, the proposed method presented a linear range of 0.05-0.5 mg L-1 (10-100 nM), limit of detection (LOD) 0.01 mg L-1 (2 nM), and relative standard deviation (RSD) ≤ 2.01% (n = 10). The interaction of the nanoprobe and PT led to aggregation due to a bioconjugate formation. The systems’ hydrodynamic radius varied from 4.31 nm (QD‑CdTe1) to 30.50 nm for the bioconjugate (QD-CdTe1-PT). The method was sensitive to variation in ionic strength and based on thermodynamic parameters; it was demonstrated that the interaction mechanism occurred preferentially through electrostatic forces. Finally, the method proved to be fast, sensitive, and viable for quantifying PT in drugs and synthetic urine samples with recoveries above 95%.

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30

Iwase, Y., R. Ohno, and M. Ohmori. "Current-voltage characteristics of high resistivity CdTe." MRS Proceedings 302 (1993). http://dx.doi.org/10.1557/proc-302-225.

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Анотація:

Current-voltage characteristics of high resistivity CdTe, with consideration to Schottky barrier height at the contact and defect levels in the band gap were investigated by experimental and numerical simulation methods. From the electron injection investigation, the density of electron traps corresponded to the doped Cl concentration in the crystal. Numerical simulation of current-voltage characteristics was made based on Schockley Read Hall (SRH) statistics. In the low bias region, calculated characteristics were in fairly close agreement with the experimental results for Pt/CdTe/Pt diode. The electric field was not uniform along the biased direction and an almost neutral region was present in the vicinity of anode contact even when the bias was applied.

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31

Benazzi, Elisabetta, Vito Cristino, Rita Boaretto, Stefano Caramori, and Mirco Natali. "Photoelectrochemical hydrogen evolution using CdTexS1−x quantum dots as sensitizers on NiO photocathodes." Dalton Transactions, 2021. http://dx.doi.org/10.1039/d0dt03567j.

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Selvam, Sathish Panneer, Le Minh Tu Phan, and Sungbo Cho. "SARS CoV2 N Gene-Targeted Anodic Stripping Voltammetry Sensor Using a Novel CoS-NGQD/Pt@Pd Platform and Au-DNA-CdTe QD Probe." SSRN Electronic Journal, 2022. http://dx.doi.org/10.2139/ssrn.4139899.

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Selvam, Sathish Panneer, Le Minh Tu Phan, and Sungbo Cho. "SARS CoV2 N Gene-Targeted Anodic Stripping Voltammetry Sensor Using a Novel CoS-NGQD/Pt@Pd Platform and Au-DNA-CdTe QD Probe." SSRN Electronic Journal, 2022. http://dx.doi.org/10.2139/ssrn.4166593.

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Selvam, Sathish Panneer, Le Minh Tu Phan, and Sungbo Cho. "SARS‐CoV‐2 N Gene‐Targeted Anodic Stripping Voltammetry Sensor Using a Novel CoS‐NGQD/Pt@Pd Platform and Au‐DNA‐CdTe QD Probe." Advanced Materials Technologies, January 31, 2023, 2201344. http://dx.doi.org/10.1002/admt.202201344.

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"РТ-симметрия терагерцовой фотопроводимости в структурах на основе Hg1-xCdxTe с инверсным спектром". Тезисы докладов Российской конференции и школы молодых ученых по актуальным проблемам полупроводниковой фотоэлектроники «ФОТОНИКА-2019», 24 травня 2019, 79. http://dx.doi.org/10.34077/rcsp2019-79.

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Анотація:

Исследования топологических изоляторов являются одной из «горячих» тем современной физики конденсированного состояния. В трехмерных топологических изоляторах (ТИ) сильное спинорбитальное взаимодействие приводит к инверсии энергетических уровней, соответствующих зоне проводимости и валентной зоне в объеме полупроводника. Как следствие, на поверхности 3D ТИ с необходимостью появляются двумерные топологические электронные состояния. Эти состояния характеризуются дираковским спектром с нулевой эффективной массой. Кроме того, направление спина электрона оказывается фиксированным перпендикулярно к его квазиимпульсу в плоскости поверхности, что препятствует рассеянию электронов назад, по крайней мере, в теории. Два упомянутых выше обстоятельства делают очень привлекательной идею использования электронного транспорта по топологическим поверхностным электронным состояниям в электронных устройствах. Полупроводниковые твердые растворы Hg1-xCdxTe представляют собой необычный случай реализации топологической фазы. Во-первых, спин-орбитальное взаимодействие уменьшается с увеличением содержания CdTe x в сплаве. Поэтому энергетический спектр электронов инвертирован и соответствует топологическому состоянию при х < 0.16, а при х > 0.16 спектр является прямым, и формируется тривиальная фаза. Следовательно, можно осуществить переход между топологической и тривиальной фазами при изменении состава сплава. Кроме того, современные методы эпитаксиального роста позволяют синтезировать пленки Hg1-xCdxTe с низкой свободной концентрацией носителей ~ 1014 см-3 . В работе представлены экспериментальные результаты по исследованию фотопроводимости, возбуждаемой импульсами терагерцового лазера, в эпитаксиальных пленках Hg1-xCdxTe в непосредственной близости от точки инверсии зон. В отсутствие магнитного поля наблюдалась положительная и отрицательная фотопроводимость в образцах с инвертированным и прямым энергетическим спектром, соответственно [1,2]. Показано, что в пленках на основе Hg1-xCdxTe с инверсной структурой зон сигнал фотопроводимости оказывается асимметричным по магнитному полю. Данную ситуацию можно рассматривать как нарушение Т-симметрии. Эффект является необычным для материалов, в которых отсутствует встроенный магнитный момент. Кроме того, фотопроводимость оказывается несимметричной для двух зеркально расположенных пар потенциальных контактов, что можно трактовать как нарушение Р-симметрии. В то же время фотоотклик не изменяется при одновременной инверсии магнитного поля и замене пары потенциальных контактов на зеркально расположенную, демонстрируя PT-инвариантность. Важно подчеркнуть, что вышеуказанные эффекты нарушения симметрии наблюдаются только в неравновесной ситуации. Равновесные характеристики, такие как магнитосопротивление, симметричны по магнитному полю и не отличаются для зеркальных пар потенциальных контактов. В работе обсуждаются возможные механизмы, приводящие к появлению PT-симметричной терагерцовой фотопроводимости.

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