Добірка наукової літератури з теми "Pt/CdTe/Pt"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Pt/CdTe/Pt".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Pt/CdTe/Pt"
Khatei, Jayakrishna, and K. S. R. Koteswara Rao. "Pt/CdTe/Pt asymmetric nano-Schottky diodes from colloidal quantum dots." AIP Advances 1, no. 4 (December 2011): 042166. http://dx.doi.org/10.1063/1.3669408.
Повний текст джерелаLing, Jun, Xulei Zhang, Ting Mao, Lei Li, Shilin Wang, Meng Cao, Jijun Zhang, et al. "Electrodeposition of CdTe Thin Films for Solar Energy Water Splitting." Materials 13, no. 7 (March 27, 2020): 1536. http://dx.doi.org/10.3390/ma13071536.
Повний текст джерелаTurturici, A. A., L. Abbene, J. Franc, R. Grill, V. Dědič, and F. Principato. "Time-dependent electric field in Al/CdTe/Pt detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 795 (September 2015): 58–64. http://dx.doi.org/10.1016/j.nima.2015.05.057.
Повний текст джерелаRen, Lu-Lu, Hao Dong, Ting-Ting Han, Yun Chen, and Shou-Nian Ding. "Enhanced anodic electrochemiluminescence of CdTe quantum dots based on electrocatalytic oxidation of a co-reactant by dendrimer-encapsulated Pt nanoparticles and its application for sandwiched immunoassays." Analyst 142, no. 20 (2017): 3934–41. http://dx.doi.org/10.1039/c7an01231d.
Повний текст джерелаAbbene, L., G. Gerardi, A. A. Turturici, S. Del Sordo, and F. Principato. "Experimental results from Al/p-CdTe/Pt X-ray detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 730 (December 2013): 135–40. http://dx.doi.org/10.1016/j.nima.2013.03.016.
Повний текст джерелаPrincipato, F., A. A. Turturici, M. Gallo, and L. Abbene. "Polarization phenomena in Al/p-CdTe/Pt X-ray detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 730 (December 2013): 141–45. http://dx.doi.org/10.1016/j.nima.2013.05.157.
Повний текст джерелаCordes, H., and R. Schmid-Fetzer. "The role of interfacial reactions in Pt/CdTe contact formation." Semiconductor Science and Technology 9, no. 11 (November 2, 1994): 2085–96. http://dx.doi.org/10.1088/0268-1242/9/11/009.
Повний текст джерелаTurturici, A. A., J. Franc, R. Grill, V. Dědič, L. Abbene, and F. Principato. "Electric field manipulation in Al/CdTe/Pt detectors under optical perturbations." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 858 (June 2017): 36–43. http://dx.doi.org/10.1016/j.nima.2017.03.041.
Повний текст джерелаSousa, José Hugo de Aguiar, Paulo Herbert França Maia Junior, Álvaro Neuton de Araújo Silva, Francisco Marcone Lima, Francisco Wendel Cipriano de Oliveira, Rafael Aragão Magalhães, Francisco Nivaldo Aguiar Freire, and Emerson Mariano da Silva. "Caracterização da eletrodeposição de filmes finos de CdTe sobre Pt em meio ácido." Matéria (Rio de Janeiro) 20, no. 4 (December 2015): 866–81. http://dx.doi.org/10.1590/s1517-707620150004.0093.
Повний текст джерелаSeino, Tomoyuki, Takafumi Ishitsu, Yuichiro Ueno, and Keiji Kobashi. "Biparametric correction methods using two shapers for In/CdTe/Pt radiation detector." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 629, no. 1 (February 2011): 170–74. http://dx.doi.org/10.1016/j.nima.2010.11.033.
Повний текст джерелаДисертації з теми "Pt/CdTe/Pt"
MagalhÃes, Rafael AragÃo. "EletrodeposiÃÃo de Filmes Finos de CdTe sobre Pt para AplicaÃÃes em Sistemas Fotovoltaicos." Universidade Federal do CearÃ, 2012. http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=7923.
Повний текст джерелаConselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico
Neste trabalho à apresentada a investigaÃÃo do processo de deposiÃÃo voltamÃtrica do telureto de cÃdmio sobre substrato de platina em meio Ãcido sulfÃrico a temperatura ambiente (24ÂC). Para este efeito, recorreu-se a tÃcnica de voltametria de varredura linear de potencial, a fim de estabelecer os valores de potencial de deposiÃÃo. Os potenciais de deposiÃÃo variaram entre -167 e -444mV. Os dados extraÃdos dos ensaios sugerem que etapas quÃmicas e eletroquÃmicas estÃo envolvidas no processo. A formaÃÃo de pico catÃdico com a subseqÃente formaÃÃo de patamar de corrente aponta a existÃncia de controle misto na deposiÃÃo do CdTe; enquanto o pico anÃdico indica que a dissoluÃÃo do material à completa. O filme depositado apresenta cor cinza escura e a tonalidade varia com o potencial de deposiÃÃo. Os filmes foram caracterizados por microscopia eletrÃnica de varredura (MEV) e difraÃÃo de raios-X (DRX). Foi verificado que os filmes depositados nos diferentes potenciais apresentam aspectos morfolÃgicos semelhantes, em forma de grÃos, uniformes e compactos. O tamanho dos cristalitos à influenciado pelo potencial de deposiÃÃo. Os difratogramas dos filmes depositados mostraram picos de difraÃÃo associados aos planos (200), (220), (311), (421) e (422).
This work presents the investigation on the voltammetrc deposition of cadmium telluride (CdTe) onto platinum substrate from sulfuric acid-based electrolyte, at room temperature (24 ÂC). For this purpose, the linear sweep voltammetry technique was used in order to establish the values of deposition potential (-167 up to -444mV). The data extracted from the voltammetric essays suggest that different chemical and electrochemical steps are involved. The formation of cathodic peak with subsequent formation of the current plateau indicates the existence of mixed control of the CdTe deposition, while the anodic peak points out that the anodic dissolution of the material is complete. The deposited film presents dark gray color and its tonality depends on the potential. The films were characterized by scanning electron microscopy (SEM) and X-rays diffraction (XRD) techniques. It was found that the films deposited at different potentials have similar morphology, as like grains, are uniform and compact. The crystallite size is influenced by the potential. The XRD patterns of deposited films show peaks associated with the (200), (220), (311), (421) and (422) planes.
TURTURICI, Accursio Antonio. "Fenomeni di polarizzazione in rivelatori Al/CdTe/Pt per spettroscopia X e gamma." Doctoral thesis, Università degli Studi di Palermo, 2014. http://hdl.handle.net/10447/90865.
Повний текст джерелаOver the years the use of semiconductor detectors has had a strategic importance in X and gamma (1 keV – 2 MeV) spectroscopy, with excellent results both in medical and astrophysics applications. The medical imaging (mammography, computed tomography), environmental monitoring (CMB) from the focal plane detectors for X telescopes and astrophysical systems, X-ray fluorescence in the Cultural Heritage represent some important applications. The semiconductor detectors have been widely used due to their interesting properties especially when compared with the conventional detection systems (gas and scintillators); a better signal-noise ratio and therefore a better energy resolution, thanks to the small average energy of ionization. Moreover, thanks to their high density compared to gas detectors provide improved detection efficiency with the possibility of achieving compact and portable systems. The materials traditionally used for the realization of detectors for X and gamma spectroscopy are silicon (Si) and germanium (Ge). Despite the good transport properties of charge carriers and the excellent level of purity, the low atomic number (Si: Z = 14; Ge Z = 32) limits the detection efficiency in the range of high energy (hard X-rays and gamma), while the narrow band gap (Si ~ 1.1 eV, Ge: ~ 0.7 eV) does not allow to operate in ambient temperature conditions. Over the past two decades, have been proposed and studied new detectors based on compound semiconductors (GaAs, Hgl2, CdTe, CdZnTe, TlBr) with band gap and atomic number greater than the Si and Ge, which are able to ensure good performance even at room temperature. The cadmium telluride (CdTe) represents one of the most promising materials, characterized by a high atomic number (ZCd = 48; ZTe = 52; Eg 1.44 eV) and a large band gap (~ 1.44 eV). Despite the interesting physical properties, the main disadvantages of these detectors are related to the phenomena of trapping of charge carriers due to defects and impurities present in the crystals. CdTe detectors are usually realized with ohmic contacts (Pt, Au) on both electrodes (anode and cathode), due to the low leakage currents (< 10 nA). In order to be able to increase the electric field, with consequent improvements of the collection efficiency, without excessive increases of the leakage current, the CdTe detectors are also made with anode blocking contacts (e.g. In, Al) and ohmic on the cathode (Pt, Au). The main critical aspect of such a configuration is the inability to create anode pixel structures, which are useful for improving the spectroscopic properties. For this reason, have been proposed and studied new CdTe detectors with aluminium contacts. However, the main drawback of these detectors is the temporal instability (polarization), which entails a degradation of spectroscopic performance over time, namely, a deterioration of the energy resolution, the variation of the calibration in energy and the reduction in the detection efficiency. This phenomenon, which is due to the over time reduction of the active zone of the detector, occurs more rapidly at high temperatures and low bias voltages and is due to the ionization of deep acceptor centers (detrapping) present in the semiconductor. In this work are presented new prototypes of CdTe detectors with blocking contact, made with anode aluminium (Al), with planar and pixel structures. The purpose of this work is to study experimentally the electrical and spectroscopic properties of these detectors, focusing on the mechanisms of charge transport and the phenomenon of polarization. The present work is part a research project, carried out by a research group of the Department of Physics and Chemistry, University of Palermo, which aims to develop advanced portable detection systems, able to do imaging and high-resolution spectroscopy, in a wide energy range (1 – 150 keV), and to operate also under high fluences (> 106 fotoni/mm2/sec), that can be used for medical (mammography, tomography) and industrial (inspections and controls quality) applications. The first chapter presents the basic physical properties of the CdTe material, the specific mechanisms that regulate the metal-semiconductor contact, the phenomena of polarization and finally the main applications of CdTe detectors. The second chapter presents the results of the electrical characterization of planar CdTe detectors, focusing on the charge transport mechanisms and the polarization phenomenon. The third chapter summarizes the results of the spectroscopic characterization of the investigated detectors in the 22 – 122 keV range, focusing on the effects of the polarization and the correlation between electrical and spectroscopic phenomena. The fourth chapter presents the results of electro-optical characterization. These experiments were carried out at the Institute of Physics of the Charles University in Prague, during a period spent living abroad, under the guidance of the Director of the Institute, the Prof. Jan Franc. Finally, in the fifth chapter the results of the electrical characterization of a pixel CdTe detector are presented.
Magalhães, Rafael Aragão. "Eletrodeposição de filmes finos de CdTe sobre substrato de Pt para uso em sistemas fotovoltaicos." reponame:Repositório Institucional da UFC, 2012. http://www.repositorio.ufc.br/handle/riufc/3804.
Повний текст джерелаSubmitted by Marlene Sousa (mmarlene@ufc.br) on 2012-09-13T18:27:56Z No. of bitstreams: 1 2012_dis_ramagalhaes.pdf: 3833484 bytes, checksum: 6220126ec2c30ba4d281c49de4ec6207 (MD5)
Approved for entry into archive by Marlene Sousa(mmarlene@ufc.br) on 2012-09-25T14:37:38Z (GMT) No. of bitstreams: 1 2012_dis_ramagalhaes.pdf: 3833484 bytes, checksum: 6220126ec2c30ba4d281c49de4ec6207 (MD5)
Made available in DSpace on 2012-09-25T14:37:38Z (GMT). No. of bitstreams: 1 2012_dis_ramagalhaes.pdf: 3833484 bytes, checksum: 6220126ec2c30ba4d281c49de4ec6207 (MD5) Previous issue date: 2012
This work presents the investigation on the voltammetrc deposition of cadmium telluride (CdTe) onto platinum substrate from sulfuric acid-based electrolyte, at room temperature (24 °C). For this purpose, the linear sweep voltammetry technique was used in order to establish the values of deposition potential (-167 up to -444mV). The data extracted from the voltammetric essays suggest that different chemical and electrochemical steps are involved. The formation of cathodic peak with subsequent formation of the current plateau indicates the existence of mixed control of the CdTe deposition, while the anodic peak points out that the anodic dissolution of the material is complete. The deposited film presents dark gray color and its tonality depends on the potential. The films were characterized by scanning electron microscopy (SEM) and X-rays diffraction (XRD) techniques. It was found that the films deposited at different potentials have similar morphology, as like grains, are uniform and compact. The crystallite size is influenced by the potential. The XRD patterns of deposited films show peaks associated with the (200), (220), (311), (421) and (422) planes.
Neste trabalho é apresentada a investigação do processo de deposição voltamétrica do telureto de cádmio sobre substrato de platina em meio ácido sulfúrico a temperatura ambiente (24ºC). Para este efeito, recorreu-se a técnica de voltametria de varredura linear de potencial, a fim de estabelecer os valores de potencial de deposição. Os potenciais de deposição variaram entre -167 e -444mV. Os dados extraídos dos ensaios sugerem que etapas químicas e eletroquímicas estão envolvidas no processo. A formação de pico catódico com a subseqüente formação de patamar de corrente aponta a existência de controle misto na deposição do CdTe; enquanto o pico anódico indica que a dissolução do material é completa. O filme depositado apresenta cor cinza escura e a tonalidade varia com o potencial de deposição. Os filmes foram caracterizados por microscopia eletrônica de varredura (MEV) e difração de raios-X (DRX). Foi verificado que os filmes depositados nos diferentes potenciais apresentam aspectos morfológicos semelhantes, em forma de grãos, uniformes e compactos. O tamanho dos cristalitos é influenciado pelo potencial de deposição. Os difratogramas dos filmes depositados mostraram picos de difração associados aos planos (200), (220), (311), (421) e (422).
Тези доповідей конференцій з теми "Pt/CdTe/Pt"
Ishikawa, Shin-nosuke, Hiroyuki Aono, Shin Watanabe, Shin'ichiro Takeda, Kazuhiro Nakazawa, and Tadayuki Takahashi. "Performance measurements of Al/CdTe/Pt pixel diode detectors." In Optical Engineering + Applications, edited by Ralph B. James, Arnold Burger, and Larry A. Franks. SPIE, 2007. http://dx.doi.org/10.1117/12.735188.
Повний текст джерелаSeino, T., I. Takahashi, T. Ishitsu, K. Yokoi, and K. Kobashi. "Suppressing the polarization effect in high temperature conditions for an In/CdTe/Pt detector." In 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC). IEEE, 2012. http://dx.doi.org/10.1109/nssmic.2012.6551962.
Повний текст джерелаYamazato, Masaaki, Tetsuya Yamauchi, Ryoichi Ohno, and Akira Higa. "Effect of sulfur treatment on the γ-ray detection quality of Al/CdTe/Pt Schottky diode." In 2008 IEEE Nuclear Science Symposium and Medical Imaging conference (2008 NSS/MIC). IEEE, 2008. http://dx.doi.org/10.1109/nssmic.2008.4775160.
Повний текст джерела