Готові списки джерел за темами / Printed Oxide TFTs

Добірка наукової літератури з теми "Printed Oxide TFTs"

Автор: Grafiati

Опубліковано: 6 вересня 2023

Оновлено: 7 вересня 2023

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Статті в журналах з теми "Printed Oxide TFTs"

Chen, Siting, Yuzhi Li, Yilong Lin, Penghui He, Teng Long, Caihao Deng, Zhuo Chen, et al. "Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance." Coatings 10, no. 4 (April 24, 2020): 425. http://dx.doi.org/10.3390/coatings10040425.

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Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

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Li, Yuzhi, and Shengdong Zhang. "Fully Inkjet-Printed Short-Channel Metal-Oxide Thin-Film Transistors Based on Semitransparent ITO/Au Source/Drain Electrodes." Coatings 10, no. 10 (September 30, 2020): 942. http://dx.doi.org/10.3390/coatings10100942.

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In this work, short-channel semitransparent indium-tin-oxide (ITO)/Au electrode pairs were fabricated via inkjet printing and lift-off technology. The printed hydrophobic coffee stripes not only define the channel length of ITO/Au electrode pairs, but also help the realization of uniform short-channel In0.95Ga0.05Ox thin-film transistors (TFTs). The patterned semitransparent ITO/Au films, with the assistance of inkjet printing, exhibit an excellent conductivity compared to that of printed ITO films, and the short-channel In0.95Ga0.05Ox TFTs based on the semitransparent ITO/Au source/drain electrodes exhibit a maximum mobility of 2.9 cm2 V−1 s−1. This work proposes a method to prepare patterned high-conductive electrodes for TFTs with the assistance of inkjet printing.

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Scheideler, William J., and Vivek Subramanian. "How to print high-mobility metal oxide transistors—Recent advances in ink design, processing, and device engineering." Applied Physics Letters 121, no. 22 (November 28, 2022): 220502. http://dx.doi.org/10.1063/5.0125055.

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High-throughput printing-based fabrication has emerged as a key enabler of flexible electronics given its unique capability for low-cost integration of circuits based on printed thin film transistors (TFTs). Research in printing inorganic metal oxides has revealed the potential for fabricating oxide TFTs with an unmatched combination of high electron mobility and optical transparency. Here, we highlight recent developments in ink chemistry, printing physics, and material design for high-mobility metal oxide transistors. We consider ongoing challenges for this field that include lowering process temperatures, achieving high speed and high resolution printing, and balancing device performance with the need for high mechanical flexibility. Finally, we provide a roadmap for overcoming these challenges with emerging synthetic strategies for fabricating 2D oxides and complementary TFT circuits for flexible electronics.

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Choi, Seungbeom, Kyung-Tae Kim, Sung Park, and Yong-Hoon Kim. "High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric." Materials 12, no. 6 (March 13, 2019): 852. http://dx.doi.org/10.3390/ma12060852.

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In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

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Choi, Woon-Seop. "Preparation of Li-Doped Indium-Zinc Oxide Thin-Film Transistor at Relatively Low Temperature Using Inkjet Printing Technology." Korean Journal of Metals and Materials 59, no. 5 (May 5, 2021): 314–20. http://dx.doi.org/10.3365/kjmm.2021.59.5.314.

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Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs). Among potential applications, metal oxide TFTs, which have good properties and moderate processing methods, could be prepared using inkjet printing in the display industry. One effective method of improving their electrical properties is via doping. Lithium doping an oxide TFT is a very delicate process, and difficult to get good results. In this study, lithium was added to indium-zinc oxide (IZO) for inkjet printing to make oxide TFTs. Electrical properties, transfer and output curves, were achieved using inkjet printing even at the relatively low annealing temperature of 200 oC. After optimizing the inkjet process parameters, a 0.01 M Li-doped IZO TFT at 400 oC showed a mobility of 9.08 ± 0.7 cm2/V s, a sub-threshold slope of 0.62 V/dec, a threshold voltage of 2.66 V, and an on-to-off current ratio of 2.83 × 108. Improved bias stability and hysteresis behavior of the inkjet-printed IZO TFT were also achieved by lithium doping.

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Lee, S. H., Y. J. Kwack, J. S. Lee, and W. S. Choi. "Inkjet-Printed Oxide TFTs with Solution-Processed Dual Semiconductors." ECS Transactions 75, no. 10 (September 23, 2016): 127–31. http://dx.doi.org/10.1149/07510.0127ecst.

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Ye, Heqing, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam, and Se Hyun Kim. "Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing." Nanomaterials 10, no. 7 (July 3, 2020): 1304. http://dx.doi.org/10.3390/nano10071304.

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Анотація:

The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.

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Chang, Yeoungjin, Ravindra Naik Bukke, Jinbaek Bae, and Jin Jang. "Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor." Nanomaterials 13, no. 17 (August 25, 2023): 2410. http://dx.doi.org/10.3390/nano13172410.

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Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μFE), lower IOFF, and excellent stability under bias stress. TFTs have widespread applications, such as printed electronics, flexible displays, smart cards, image sensors, virtual reality (VR) and augmented reality (AR), and the Internet of Things (IoT) devices. In this study, we approach using a low-temperature solution-processed hafnium zirconium oxide (HfZrOx) gate insulator (GI) to improve the performance of lanthanum zinc oxide (LaZnO) TFTs. For the optimization of HfZrO GI, HfZrO films were annealed at 200, 250, and 300 °C. The optimized HfZrO-250 °C GI-based LaZnO TFT shows the μFE of 19.06 cm2V−1s−1, threshold voltage (VTH) of 1.98 V, hysteresis voltage (VH) of 0 V, subthreshold swing (SS) of 256 mV/dec, and ION/IOFF of ~108. The flexible LaZnO TFT with HfZrO-250 °C GI exhibits negligible ΔVTH of 0.25 V under positive-bias-temperature stress (PBTS). The flexible hysteresis-free LaZnO TFTs with HfZrO-250 °C can be widely used for flexible electronics. These enhancements were attributed to the smooth surface morphology and reduced defect density achieved with the HfZrO gate insulator. Therefore, the HfZrO/LaZnO approach holds great promise for next-generation MOS TFTs for flexible electronics.

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Lee, Yong Gu, and Woon-Seop Choi. "Electrohydrodynamic Jet-Printed Zinc–Tin Oxide TFTs and Their Bias Stability." ACS Applied Materials & Interfaces 6, no. 14 (July 15, 2014): 11167–72. http://dx.doi.org/10.1021/am5009826.

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Chandra, Aditi, Mao Takashima, and Arvind Kamath. "Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils." MRS Advances 2, no. 23 (2017): 1259–65. http://dx.doi.org/10.1557/adv.2017.227.

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ABSTRACTPolysilicon complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) are fabricated on large area, flexible stainless steel foils using novel ink depositions within a hybrid printed/conventional process flow. A self-aligned top gate TFT structure is realized with an additive materials approach to substitute the use of high capital cost ion implantation and lithography processes. Polyhydrosilane-based silicon ink is coated and laser crystallized to form the polysilicon channel. Semiconductor grade P-type and N-type unique dopant ink formulations are screen printed and combined with thermal drive in and activation to form self-aligned doped source and drain regions. A high refractory top gate material is chosen for its process compatibility with printed dopants, chemical resistance, and work function. Steel foil substrates are fully encapsulated to allow for high temperature processing. The resultant materials set and process flow enables TFT electrical characteristics with NMOS and PMOS mobilities exceeding 120 cm2/Vs and 60 cm2/Vs, respectively. On/Off ratios are >107. Reproducibility, uniformity, and reliability data in a production environmental is shown to demonstrate high volume, high throughput manufacturability. The device characteristics and scheme enable NFC (13.56MHz) capable circuits for use in flexible NFC and display-based smart labels and packaging.

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Більше джерел

Дисертації з теми "Printed Oxide TFTs"

Nehru, Devabharathi. "Inkjet-Printed Co-continuous Mesoporous Oxides for Surface Dominated Functional Devices." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5856.

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Over the last few decades, printed and flexible electronics have emerged as a major area of research, which may cater multiple domains of application requirements for the forthcoming industrial revolution. The solution processed/printed devices can be ideally suited for cost-effective, volume production of sensors and other electronic components that can be connected through Internet of Things (IoT). In this regard, a large variety of sensors may find their application in essential parameter monitoring at industrial premises, wearables, smart textiles, smart appliances, smart packaging, etc., On the other hand, the ability to print the backplane electronics may truly revolutionize the pharmaceutical, diagnostics, and display industries. Next, among available and printable semiconductor technologies (such as polymer, oxides, carbon nanostructures, and various 2D semiconductors) inexpensive, non-toxic, easy-to-print, environmentally stable, abundant, and high mobility metal oxides are believed to have an overall edge in technology commercialization and therefore have been chosen as the printable semiconductor material in the present study. On the other hand, it may be noted that the electronic devices that come under the purview of printed electronics are predominantly surface-dominated devices. Therefore, in this thesis, a soft templating technique has been developed to provide co-continuous, mesoporous structures; the method has earlier been known for fabrication of films using processes, such as dip coating, here, it has now been modified to suit commercial inkjet printing process. A large variety of n- and p-type, undoped and doped, oxide semiconductors (In2O3, SnO2, CuO, Sn: In2O3 (ITO)) have been fabricated with different polymer templating agents to realize printed, large-area, homogeneous, co-continuous, mesoporous structures with large surface-to-volume ratio and pore size varying between 15-50 nm for different semiconducting oxide systems and curing temperatures. The printed mesoporous oxides are then utilized to fabricate fully-printed and extremely high performance (in terms of sensitivity, selectivity, and stability) volatile organic species (e.g. ethanol) sensors or gas (e.g. chlorine, NO2, etc.) sensors. At the same time, identical material systems have been used to fabricate high power printed transistors and fully printed complementary metal-oxide semiconductor (CMOS) electronics on different substrates

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Pereira, Rita de Vasconcelos. "Printing of eco-friendly solution based zinc-tin oxide for device applications." Master's thesis, 2019. http://hdl.handle.net/10362/88071.

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The research of amorphous metal oxide semiconductors for printed electronics applications, such as transparent and flexible devices, has been increasing to allow the low-cost production, good performance and large area upscaling of these materials. The most commonly used solution-based semiconductors rely on toxic solvents and are indium-based. To avoid this critical raw material ZTO is the preferred alternative. Nevertheless, replacing the toxic solvent and the chloride-based tin precursor wich also contributes to the toxicity of the solution remains a challenge. This work focuses on the development of eco-friendly ZTO precursor solutions to produce electronic devices at low temperature and optimization of flexographic printing of these ZTO inks. ZTO/SiO2 TFTs were successfully produced at 300 °C with non-toxic solvent, presenting a mobility of 2.98 ± 0.05 cm2/V.s and flexoprinted Ag/ZTO/ITO Schottky diodes were successfully produced at low temperature (150 °C + DUV) with a current on/off ratio of 1000. These devices show equivalent performance to the current state-of-the-art of ZTO devices produced with toxic solvents. Finally, TFTs and Schottky diodes using non-toxic solvent and chloride-free ZTO precursors were successfully demonstrated for the first time. This work clearly shows that it is possible to produce 100 % eco-friendly inks for high performance devices at low temperature suitable for large area printing.

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Santos, Ângelo Emanuel Neves dos. "Design and simulation of a smart bottle with fill-level sensing based on oxide TFT technology." Master's thesis, 2016. http://hdl.handle.net/10362/19593.

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Packaging is an important element responsible for brand growth and one of the main rea-sons for producers to gain competitive advantages through technological innovation. In this re-gard, the aim of this work is to design a fully autonomous electronic system for a smart bottle packaging, being integrated in a European project named ROLL-OUT. The desired application for the smart bottle is to act as a fill-level sensor system in order to determine the liquid content level that exists inside an opaque bottle, so the consumer can exactly know the remaining quantity of the product inside. An in-house amorphous indium–gallium–zinc oxide thin-film transistor (a-IGZO TFT) model, previously developed, was used for circuit designing purposes. This model was based in an artificial neural network (ANN) equivalent circuit approach. Taking into account that only n-type oxide TFTs were used, plenty of electronic building-blocks have been designed: clock generator, non-overlapping phase generator, a capacitance-to-voltage converter and a comparator. As it was demonstrated by electrical simulations, it has been achieved good functionality for each block, having a final system with a power dissipation of 2.3 mW (VDD=10 V) not considering the clock generator. Four printed circuit boards (PCBs) have been also designed in order to help in the testing phase. Mask layouts were already designed and are currently in fabrication, foreseeing a suc-cessful circuit fabrication, and a major step towards the design and integration of complex trans-ducer systems using oxide TFTs technology.

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Тези доповідей конференцій з теми "Printed Oxide TFTs"

Han, Y., Y. Wang, H. T. Dai, S. G. Wang, J. L. Zhao, and X. W. Sun. "Influence of the metallic electrodes on the contact resistance of the ink-jet printed In-Ga-Zn oxide TFTs." In SPIE OPTO, edited by Ferechteh Hosseini Teherani, David C. Look, and David J. Rogers. SPIE, 2013. http://dx.doi.org/10.1117/12.2002885.

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Wang, Y., T. P. Chen, X. W. Sun, J. I. Wong, H. Y. Yang, and J. L. Zhao. "Ink-jet printed In-Ga-Zn oxide nonvolatile TFT memory utilizing silicon nanocrystals embedded in SiO2 gate dielectric." In 2013 IEEE International Nanoelectronics Conference (INEC). IEEE, 2013. http://dx.doi.org/10.1109/inec.2013.6466004.

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