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1
Arif, M. S., S. M. Ayob, and Z. Salam. "Asymmetrical Nine-Level Inverter Topology with Reduce Power Semicondutor Devices." TELKOMNIKA (Telecommunication Computing Electronics and Control) 16, no. 1 (February 1, 2018): 38. http://dx.doi.org/10.12928/telkomnika.v16i1.8520.
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Zhang Dongyun, 张冬云, 谢印开 Xie Yinkai, 李丛洋 Li Congyang, 曹玄扬 Cao Xuanyang, and 徐仰立 Xu Yangli. "Simulation and Optimization of High Power Semicondutor Laser Microchannel Heat Sink." Chinese Journal of Lasers 44, no. 2 (2017): 0202008. http://dx.doi.org/10.3788/cjl201744.0202008.
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Chiu, Yu Sheng, Quang Ho Luc, Yueh Chin Lin, Jui Chien Huang, Chang Fu Dee, Burhanuddin Yeop Majlis, and Edward Yi Chang. "Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications." Japanese Journal of Applied Physics 56, no. 9 (August 24, 2017): 094101. http://dx.doi.org/10.7567/jjap.56.094101.
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Zhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry." E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.
Повний текст джерелаАнотація:
With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical characteristics, recent marketing, production and limitations, the advantages and disadvantages of each semiconductor is analyzed and the suggestion of how to avoid the disadvantage through application is proposed. At last, the future development is predicted. According to the analysis result of this paper, silicon poses more merits. Silicon is not only cheaper but also performs better making it a preference of GaAs, and GaN in the domain of IC. The second generation semiconductor, GaAs, is widely used in the circuits and photoelectric integration. Furthermore, the third semiconductor material GaN is a promising material for power switching and communication and has the great possibility to play a crucial role in market.
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TREW, R. J., and M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Повний текст джерелаАнотація:
Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.
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Ribeiro, Vander Alkmin dos Santos, Valesca Donizete de Oliveira, Rero Marques Rubinger, Adhimar Flávio Oliveira, and Claudiney Sales Pereira Mendonça. "Síntese, caracterização magnética e elétrica da ferrita de aluminato de cobre." Research, Society and Development 10, no. 8 (July 13, 2021): e31210817314. http://dx.doi.org/10.33448/rsd-v10i8.17314.
Повний текст джерелаАнотація:
Atualmente, as ferritas têm sido tema de muitas pesquisas devido as suas vantagens e propriedades que podem ser facilmente manipuladas, sendo assim de grande interesse tecnológico e científico. Para tanto, a distribuição dos cátions e interações magnéticas destacam um papel importante nestes materiais e, portanto, têm sua importância científica. As relações entre a composição química, estrutura cristalina, comportamento magnético e elétrico foram investigadas em ferritas de aluminato de cobre. As ferritas CuAlXFe2-XO4, onde x = 0,0; 0,5; 1,0 e 1,5 foram obtidas pelo método convencional de cerâmicas, reação estado-sólido entre os óxidos de ferro, alumínio e cobre. A mistura de óxidos foram pré-sinterizadas por 24 horas a 800°C e depois sinterizadas a 1100°C durante 8h. As propriedades magnéticas foram medidas por um magnetômetro de amostra vibrante e determinadas a partir do gráfico de histerese, observando-se que possui um comportamento de um material magnético moderado devido ao perfil da curva de magnetização e valores de coercividade (~223kA/m). A condutividade elétrica das pastilhas foi obtida a partir de características de tensão pela corrente em função da temperatura. A dependência da condutividade elétrica com a temperatura das ferritas de aluminato de cobre com diferentes composições apresentou um comportamento semicondutor e com o aumento da resistividade do material com o aumento do teor de alumínio ocorre devido à sua propriedade condutora. Também se observou que a magnetização de saturação diminui com o aumento da concentração de alumínio, apresentando comportamento de um material paramagnético e mole.
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Valentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.
Повний текст джерелаАнотація:
Power semiconductor switches such as Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) continue to be a leading cause of failure in power electronics systems. With the continued expansion of the power electronics market, reliable switching devices are of utmost importance in maintaining reliable operation of high power electronic systems. An overview of the failure mechanisms of power semiconductor switches identified by two failure analyses at CALCE is presented. The specific applications of power semiconducting switches have a wide range and include semiconductors found in converters for AC/DC power supplies and home appliance motor control board. All observed failures were from devices which experienced a short circuit between the collector and emitter terminals. The causes of the failures are hypothesized to be a combination of manufacturing defects and poor thermal management.
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Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
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Štěpánek, Jan, Luboš Streit, and Tomáš Komrska. "Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications." TRANSACTIONS ON ELECTRICAL ENGINEERING 7, no. 1 (March 30, 2020): 10–13. http://dx.doi.org/10.14311/tee.2018.1.010.
Повний текст джерелаАнотація:
The paper deals with the comparison of power semiconductors based on Si and SiC in application of power converters for power systems. These are single-phase voltage-source bridge inverters with nominal power of 150 kVA. Power converters are designed to operate under both active power and reactive power. Mechanical design of the converters is ready for interchange the power semiconductor modules and assess the operation with both, Si and SiC technology.
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Chi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze, and Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation." Materials 15, no. 3 (February 2, 2022): 1164. http://dx.doi.org/10.3390/ma15031164.
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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.
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Kim, Kyunghun, Hocheon Yoo, and Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications." Polymers 14, no. 14 (July 21, 2022): 2960. http://dx.doi.org/10.3390/polym14142960.
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The life expectancy of humans has been significantly elevated due to advancements in medical knowledge and skills over the past few decades. Although a lot of knowledge and skills are disseminated to the general public, electronic devices that quantitatively diagnose one’s own body condition still require specialized semiconductor devices which are huge and not portable. In this regard, semiconductor materials that are lightweight and have low power consumption and high performance should be developed with low cost for mass production. Organic semiconductors are one of the promising materials in biomedical applications due to their functionalities, solution-processability and excellent mechanical properties in terms of flexibility. In this review, we discuss organic semiconductor materials that are widely utilized in biomedical devices. Some advantageous and unique properties of organic semiconductors compared to inorganic semiconductors are reviewed. By critically assessing the fabrication process and device structures in organic-based biomedical devices, the potential merits and future aspects of the organic biomedical devices are pinpointed compared to inorganic devices.
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Silva, Paula Vanessa da, Maria Cleide Azevedo Braz, André Hayato Saguchi, Diego Portes Vieira Leite, and Ângela Toshie Araki Yamamoto. "Uso do tanino como fotossensibilizador na terapia fotodinâmica contra Enterococcus faecalis." Research, Society and Development 10, no. 11 (September 4, 2021): e370101119440. http://dx.doi.org/10.33448/rsd-v10i11.19440.
Повний текст джерелаАнотація:
O objetivo deste estudo foi avaliar a redução microbiana após a terapia fotodinâmica como coadjuvante ao preparo químico-cirúrgico (PQC) utilizando o tanino hidrolisável como fotossensibilizador, em canais radiculares de 60 dentes bovinos contaminados com Enterococcus faecalis. Dividiu-se os dentes em seis grupos: grupo NAOCl, onde utilizou-se apenas o NaOCl a 2,5%; grupo PDT/AM, utilizou-se a PDT com azul de metileno como fotossensibilizador; grupo Tan, apenas tanino foi utilizado; grupo PDT/Tan, utilizou-se PDT com tanino como fotossensibilizador; grupo NaOCl/PDT/Tan, NaOCl 2,5% foi associado a PDT com tanino; e no grupo NaOCl/PDT/AM, onde associou-se ao NaOCl 2,5% o PDT com azul de metileno. Para a PDT usou-se 3ml do fotossensibilizador na concentração de 0,005% por 5min (tempo de pré-irradiação). Para a irradiação foi utilizado um laser semicondutor portátil (Laser DUO®, GaAlAs, InGaAlP), comprimento de onda de 660 nm, potência de 100 mW, totalizando 1,8 J de energia e tempo de irradiação de 180s. Foram realizadas três coletas microbiológicas, denominadas inicial (antes do PQC), intermediária (após o PQC) e final (7 dias após o PQC). Após as coletas, fez-se o plaqueamento para a contagem das UFC’s. Os resultados foram expressos através das medidas estatísticas: média, desvio padrão, mediana, quartis e valores mínimo e máximo. Foi utilizado o teste F (ANOVA), as comparações múltiplas de Tamanho e o teste de Kruswal-Wallis. A verificação da hipótese de normalidade foi realizada através do teste de Shapiro-Wilk. O nível de significância estabelecido foi de 0,05. Concluiu-se que terapia fotodinâmica, utilizando o tanino hidrolisável como fotossensibilizador mostrou-se eficaz como coadjuvante no preparo químico-cirúrgico na redução microbiana.
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Setera, Brett, and Aristos Christou. "Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics." Electronics 11, no. 1 (December 22, 2021): 10. http://dx.doi.org/10.3390/electronics11010010.
Повний текст джерелаАнотація:
The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis and when the material is subjected to extreme environmental stress. Wide bandgap semiconductor devices are reviewed from the point of view of the role of defects and their impact on performance. It is shown that the reduction of defects represents a fundamental breakthrough that will enable wide bandgap (WBG) semiconductors to reach full potential. The main emphasis of the present review is to understand defect dynamics in WBG semiconductor bulk and at interfaces during the material synthesis and when subjected to extreme environments. High-brightness X-rays from synchrotron sources and advanced electron microscopy techniques are used for atomic-level material probing to understand and optimize the genesis and movement of crystal defects during material synthesis and extreme environmental stress. Strongly linked multi-scale modeling provides a deeper understanding of defect formation and defect dynamics in extreme environments.
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Lin, Chih-Hsuan, and Kuei-Ann Wen. "Power Pad Based on Structure Stacking for Ultralow-Power Three-Axis Capacitive Sensing Applications." Journal of Nanoelectronics and Optoelectronics 16, no. 4 (April 1, 2021): 630–41. http://dx.doi.org/10.1166/jno.2021.2982.
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Ultralow-power sensing systems are a trend in handheld devices. The leakage-current-induced power consumption of traditional power pads has not been able to satisfy the specifications of three-axis ultralow-power sensing systems at high temperatures. In this paper, we present a transient detector and delay cell based on resistor and capacitor charge and discharge, two layers of structure stacking based on a metal–oxide–semiconductor, and gate-driven/substrate-driven/gate and substrate-driven methods to guide away the electrostatic current when electrostatic discharge events occur without influencing the three-axis ultralow-power sensing system. Then, we propose a stacking structure based on a metal–oxide–semiconductor to decrease leakage-current-induced power consumption, which is proportional to temperature. Moreover, we analyze whether the gate-driven/substrate-driven/gate method or substrate-driven method is most cost effective as well as the mechanism of substrate noise suppression of the two layers of structure stacking. The power pad based on the gate-driven metal–oxide–semiconductor with three structural stacks, power pad based on the gate-driven metal–oxide–semiconductor with structural stacking, power pad based on the substrate-driven metal–oxide–semiconductor with structural stacking, and the power pad based on both the gate-driven and substrate-driven metal–oxide–semiconductors with structural stacking have an electrostatic discharge standard with both positive and negative modes higher than 8/8, 8/8, 5/- kV, and 5.5/- kV for the human body model and an electrostatic discharge standard with both positive and negative modes higher than 1000/1000, 600/550, 500/- V, 300/- V for the machine model. The leakage-current-induced power consumption of the power pad based on the gate-driven metal–oxide–semiconductor with structure stacking, the power pad based on the substrate-driven metal–oxide–semiconductor with structure stacking, the power pad based on both the gate-driven, and the substrate-driven metal–oxide–semiconductor with structure stacking are approximately 3.5 pW/16.45 nW, 20 pW/- nW, and 2.89 pW/16.89 nW at 25/125 °C when the voltage of the input pin was 1.0 V.
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Jensen, Tim, and David L. Saums. "Metallic TIM Testing and Selection for Harsh Environment Applications for GaN RF Semiconductors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000079–86. http://dx.doi.org/10.4071/2016-hitec-79.
Повний текст джерелаАнотація:
Summary An important determinant of device reliability is operating temperature control. Maintaining a semiconductor device at or below the maximum rated junction temperature (Tj) is accomplished through careful thermal management design and selection of well-performing thermal interface materials (TIM) that minimize efficiency losses in packaging and between the semiconductor device package and a heat sink or liquid cold plate. Thermal management design is increasingly important in harsh operating environments, especially where higher operating temperatures are specified. Minimizing thermal resistances through each semiconductor package material stack and at the external case or package surface of the device are important aspects of maintaining operating temperatures within specified maximum values. In addition, certain semiconductor devices require an electrical path from the semiconductor case to an external component. Maximizing electrical performance of gallium nitride (GaN) RF semiconductors is critical to system performance, as a primary example. The on-going transition within RF and microwave systems from silicon to GaN devices has increased the need for thermal interface materials which offer both improved thermal performance and electrical conductivity. Additionally, GaN semiconductor die are typically smaller in footprint and, even with equivalent power dissipation values, therefore may operate with higher heat flux values that require greater attention to proper thermal solution design. To address such needs, recently-developed forms of metallic TIM preforms are available for integrated circuits, power semiconductors, and RF devices. Understanding how these materials may be tested and selected for specific application requirements is the subject of this discussion.
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Lu, Yuzheng, Youquan Mi, Junjiao Li, Fenghua Qi, Senlin Yan, and Wenjing Dong. "Recent Progress in Semiconductor-Ionic Conductor Nanomaterial as a Membrane for Low-Temperature Solid Oxide Fuel Cells." Nanomaterials 11, no. 9 (September 3, 2021): 2290. http://dx.doi.org/10.3390/nano11092290.
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Reducing the operating temperature of Solid Oxide Fuel Cells (SOFCs) to 300–600 °C is a great challenge for the development of SOFC. Among the extensive research and development (R&D) efforts that have been done on lowering the operating temperature of SOFCs, nanomaterials have played a critical role in improving ion transportation in electrolytes and facilitating electrochemical catalyzation of the electrodes. This work reviews recent progress in lowering the temperature of SOFCs by using semiconductor-ionic conductor nanomaterial, which is typically a composition of semiconductor and ionic conductor, as a membrane. The historical development, as well as the working mechanism of semiconductor-ionic membrane fuel cell (SIMFC), is discussed. Besides, the development in the application of nanostructured pure ionic conductors, semiconductors, and nanocomposites of semiconductors and ionic conductors as the membrane is highlighted. The method of using nano-structured semiconductor-ionic conductors as a membrane has been proved to successfully exhibit a significant enhancement in the ionic conductivity and power density of SOFCs at low temperatures and provides a new way to develop low-temperature SOFCs.
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Ostapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov, and Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures." Inventions 7, no. 4 (October 18, 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
Повний текст джерелаАнотація:
Systems with high-temperature superconductors (HTSC) impose new requirements on power conversions, since the main part of the losses in such systems is induced in the semiconductors of the converters. Within the framework of this study, the possibility of improving the static and dynamic characteristics of power semiconductor diodes using cryogenic cooling was confirmed; in some cases, a loss reduction of up to 30% was achieved.
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Nakayama, Yasuo, Ryohei Tsuruta, and Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques." Materials 15, no. 20 (October 13, 2022): 7119. http://dx.doi.org/10.3390/ma15207119.
Повний текст джерелаАнотація:
Epitaxial growth, often termed “epitaxy”, is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.
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Li, Zhigang, Xiangke Cui, Xiaowei Wang, Zongpeng Wang, Minghu Fang, Shangshen Feng, Yanping Liu, et al. "Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays." Applied Physics Reviews 9, no. 2 (June 2022): 021412. http://dx.doi.org/10.1063/5.0087808.
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Solid-state electrical conducting materials can be roughly categorized as superconductors, conductors, and semiconductors, depending on their conducting carriers, resistance, and band structures. This research reports the discovery of super-semiconductors, whose resistivity is 3–10 orders of magnitude lower than conventional semiconductors at room temperature. In addition, there is a transition from a metal state to a super-semiconducting state at near room temperatures, which is accompanied by an increase in hole carrier density and the mobility increase in electrons. For the first time, a hole-dominated carrier metal is observed in nanostructured bimetallic arrays near room temperature, and no other special conditions are required. Such a behavior is due to the generation of hot electrons and holes induced by metal plasmon resonance in the infrared range in the nanostructured bimetallic arrays. Our research empowers metals with semiconductor features and paves the way to realize ultra-low-power metal-based semiconductor devices.
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Schneider, Germar, Thi Quynh Nguyen, Matthias Taubert, Julien Bounouar, Catherine Le-Guet, Andreas Leibold, Helene Richter, and Markus Pfeffer. "Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics." Solid State Phenomena 255 (September 2016): 381–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.381.
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This paper gives an overview about all activities performed within a common project between industrial and academic partners to define clean room concepts for the first worldwide high volume semiconductor front end facility IFD for 300 mm power semiconductors. The investigation within this study is the base for the 300 mm container strategy resulting in new innovative manufacturing and automation concepts.
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Funaki, Tsuyoshi, Kazuya Kodama, Hitoshi Umezawa, and Shinichi Shikata. "Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode." Materials Science Forum 679-680 (March 2011): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.820.
Повний текст джерелаАнотація:
Wide band gap semiconductors have been attracted as the material for fabricating power switching devices to obtain lower power conversion loss in high voltage circuit, and to operate harsh environment of high temperature. This paper focuses on diamond as the wide band gap semiconductor material and elucidates the dynamic characteristics in switching operation. To this end, Schottky barrier diode (SBD) is fabricated with p type diamond semiconductor and static I-V characteristics is evaluated. Then, the switching operation of diamond SBD is demonstrated, and forward current dependency of the recovery phenomena is characterized. The diamond SBDs show superior fast switching capability with low reverse recovery current, which is inherent in uni-polar switching device.
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Lee, Gi-Young, Min-Shin Cho, and Rae-Young Kim. "Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors." Electronics 10, no. 14 (July 18, 2021): 1722. http://dx.doi.org/10.3390/electronics10141722.
Повний текст джерелаАнотація:
With the development of wide-bandgap (WBG) power semiconductor technology, such as silicon carbide (SiC) and gallium nitride (GaN), the technology of power converters with high efficiency and high-power density is rapidly developing. However, due to the high rate-of-rise of voltage (dv/dt) and of current (di/dt), compared to conventional Si-based power semiconductor devices, the reliability of the device is greatly affected by the parasitic inductance component in the switching loop. In this paper, we propose a power loop analysis method based on lumped parameter modeling of a power circuit board with a wide conduction area for WBG power semiconductors. The proposed analysis technique is modeled based on lumped parameters, so that power loops with various current paths can be analyzed; thus, the analysis is intuitive, easy to apply and realizes dynamic power loop analysis. Through the proposed analysis technique, it is possible to derive the effective parasitic inductance component for the main points in the power circuit board. The effectiveness of the lumped parameter model is verified through PSpice and Ansys Q3D simulation results.
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ZHANG Shuhong, 张树宏, 云恩学 YUN Peter, 杨涛 YANG Tao, 郝强 HAO Qiang та 王鑫 WANG Xin. "用于原子钟的半导体激光器功率稳定研究". ACTA PHOTONICA SINICA 50, № 9 (2021): 0914002. http://dx.doi.org/10.3788/gzxb20215009.0914002.
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Peng Zhang, Peng Zhang, Teli Dai Teli Dai, Yu Wu Yu Wu, Yanhai Ni Yanhai Ni, Yong Zhou Yong Zhou, Li Qin Li Qin, Yiping Liang Yiping Liang, and Siqiang Fan Siqiang Fan. "Substrate-removed semiconductor disk laser with 0.6 W output power." Chinese Optics Letters 10, s1 (2012): S11401–311403. http://dx.doi.org/10.3788/col201210.s11401.
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Rachmady, Willy, James Blackwell, Gilbert Dewey, Mantu Hudait, Marko Radosavljevic, Robert Turkot Jr., and Robert Chau. "Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications." Solid State Phenomena 145-146 (January 2009): 165–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.165.
Повний текст джерелаАнотація:
III-V compound semiconductors have been recognized among the potential options for continuing transistor power-performance scaling owing to their ultra high charge carrier mobility. In order to realize their potential in high performance and lower-power digital logic applications, there must be strong gate control and a high Ion-Ioff ratio, achieved by integrating a stable, ultra thin high-K dielectric between the semiconductor and the gate [1, 2]. Unlike Si, which has long benefited from its very stable native oxide, III-V materials suffer from their poor native oxides that cause charge traps and Fermi level pinning at the semiconductor-oxide interface. Attempts to deposit high-K directly on III-V often produce MIS structures with fast surface state and CV instability [3].
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D., Nirmal. "HIGH PERFORMANCE FLEXIBLE NANOPARTICLES BASED ORGANIC ELECTRONICS." December 2019 2019, no. 02 (December 24, 2019): 99–106. http://dx.doi.org/10.36548/jei.2019.2.005.
Повний текст джерелаАнотація:
The attributes of the organic materials have made them more prominent in a wide range of applications engaged for large or small purpose such as the solar cells or the displays in the mobile devices. The solar cells developed using the organic semiconductors are more advantageous due to their flexibility and their easy installation. Despite the versatile nature of the and easy implementation the organic semiconductors still suffers from low efficiency in term of cost, performance and size. The proposed method incorporates the nanomaterials in the organic solar cell to improvise efficiency (performance) and to minimize the cost as well as the size of the solar cells. The proposed method replaces the semiconductor that is organic by incorporating the organic semiconductors with the nanoparticle additives to have a perfect blending in solution to improve the crystallizations of the semiconductor, and the uniformity thus improvising the power conversion efficiency in the solar cells and minimizing the size and the cost . The result acquired through evaluation proves the performance improvements to 19% form 3.5% in the solar cells.
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VOGLER, THOMAS, and DIERK SCHRÖDER. "PHYSICAL MODELING OF POWER SEMICONDUCTORS FOR THE CAE-DESIGN OF POWER ELECTRONIC CIRCUITS." Journal of Circuits, Systems and Computers 05, no. 03 (September 1995): 411–28. http://dx.doi.org/10.1142/s0218126695000254.
Повний текст джерелаАнотація:
CAE-tools can help to develop any traditional or novel power conversion topology more efficiently, by providing both the possibilities of investigation without the risk of destruction and of access to each signal in the circuit. However, a prerequisite are trustworthy simulation results both qualitatively for operation observation and quantitatively for power dissipation examination as well as for SOA control. This implies that precise power semiconductor models have to be used. In the variety of different possible modeling strategies there is only the strictly physical way which offers topology independent accurate results. In this paper a new class of physical high performance and high accuracy circuit models for today's relevant power semiconductors (Power-Diode, GTO, IGBT, Power-MOSFET) is presented. A modular concept, handling typical features of power devices like ν-zones, MOSFET controlling units or diffusion zones as basic structures, is used which allows a considerable flexibility to model future devices time efficiently. The core of this modular concept, constituted by a module of the ν-zone, employs a universal and powerful solution technique of the ambipolar diffusion equation. This technique is the only possibility for circuit models to consider physically semiconductor technology measures for improving device characteristics, such as particle irradiation for lifetime reduction, step doping of substrate or epitaxial layers as well as double diffused layers.
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Zhou, Dao, Yingzhou Peng, Francesco Iannuzzo, Michael Hartmann, and Frede Blaabjerg. "Thermal Mapping of Power Semiconductors in H-Bridge Circuit." Applied Sciences 10, no. 12 (June 24, 2020): 4340. http://dx.doi.org/10.3390/app10124340.
Повний текст джерелаАнотація:
In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.
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Gyan, Michael, Joseph Parbby, and Francis E. Botchey. "Enhanced Third Generation Semiconductor Material-Based Solar Cell Efficiency by Piezo-Phototronic Effect." 1, no. 1 (March 17, 2022): 70–76. http://dx.doi.org/10.26565/2312-4334-2022-1-10.
Повний текст джерелаАнотація:
By applying the outward uniform strain on the non-centrosymmetric piezoelectric semiconductor, the polarization charges on the material surface are induced. Polarization charges are often generated within the crystals provided that the applied strain is non-uniform. The strain applied has an effect on electronic transport and can be utilized to modulate the properties of the material. The effect of multiway coupling between piezoelectricity, semiconductor transport properties, and photoexcitation results in piezo-phototronic effects. Recent studies have shown the piezoelectric and semiconductor properties of third-generation semiconductors have been used in photodetectors, LEDs, and nanogenerators. The third-generation piezoelectric semiconductor can be used in high-performance photovoltaic cells. A third-generation piezo-phototronic solar cell material is theoretically explored in this manuscript on the basis of a GaN metal-semiconductor interaction. This study aims to determine the effects of piezoelectric polarization on the electrical performance characteristics of this solar cell material. Performance parameters such as Power Conversion Efficiency, Fill Factors, I-V Characteristics, Open Circuit Voltage, and Maximum Output Power have been evaluated. The piezophototronic effect can enhance the open-circuit current voltage by 5.5 percent with an externally applied strain by 0.9 percent. The study will open a new window for the next generation of high-performance piezo-phototronic effects.
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Morgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins, and Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.
Повний текст джерелаАнотація:
The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.
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Чэн, Чаншань, and Антон Александрович Голянин. "Designing a Cooler With Natural Cold for A 100 kW Semiconductor Power Converter." Bulletin of Science and Practice, no. 8 (August 15, 2022): 317–24. http://dx.doi.org/10.33619/2414-2948/81/34.
Повний текст джерелаАнотація:
Предметом исследования является конструкция охладителя с естественной холодопроизводительностью для полупроводникового силового преобразователя мощностью 100 кВт. Целью данной работы является разработка охладителя с возможностью естественного охлаждения для полупроводникового силового преобразователя мощностью 100 кВт и оценка его практических свойств. В ходе исследования и испытаний охладителя полупроводникового силового преобразователя мощностью 100 кВт были определены параметры, которые стали основой для математического моделирования. В обобщаются ключевые вопросы и текущее состояние исследований в области силовых полупроводниковых модулей, включая вопросы теплового проектирования модулей и теплового моделирования. Степень реализации полная. В процессе разработки опытного устройства достигнуто снижение потерь энергозатрат и снижение взрывопожароопасности промышленного производства, что в свою очередь позволит повысить эффективность изобретения и снизить себестоимость его производства. Повышение эффективности - снижение потерь электропотребления, снижение взрывопожароопасности промышленных производств из-за перегрева силовых полупроводников. The subject of the study is the design of a cooler with natural cooling capacity for a 100 kW semiconductor power converter. The purpose of this thesis is to design a cooler with natural cooling capability for a 100 kW semiconductor power converter and to evaluate its practical effects. We summarize the demand for power semiconductor devices for new applications in power electronics in recent years. During the study and testing of the cooler for the 100 kW semiconductor power converter, the parameters that became the basis for mathematical modeling were determined. In this paper, we summarize the key issues and the current state of research on power semiconductor modules, including module thermal design and thermal modeling issues. The degree of realization is complete. In the process of developing the experimental device, reduction of energy consumption losses and reduction of explosion and fire hazards in industrial production facilities was achieved, which in turn will increase the efficiency of the invention and reduce its production costs. Development of efficiency - reduction of power consumption losses, reduction of explosion and fire hazards in industrial production facilities due to overheating of power semiconductors.
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Yang, Allen Jian, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu та ін. "Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors". Nature Electronics 5, № 4 (квітень 2022): 233–40. http://dx.doi.org/10.1038/s41928-022-00753-7.
Повний текст джерелаАнотація:
AbstractTwo-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 108 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec−1. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.
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Marchat, Clément, James P. Connolly, Jean-Paul Kleider, José Alvarez, Lejo J. Koduvelikulathu, and Jean Baptiste Puel. "KPFM surface photovoltage measurement and numerical simulation." EPJ Photovoltaics 10 (2019): 3. http://dx.doi.org/10.1051/epjpv/2019002.
Повний текст джерелаАнотація:
A method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices is presented. It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact potential difference (VCPD) in the dark and under illumination, and hence the surface photovoltage (SPV). It is shown that the model phenomenologically explains the observed KPFM measurements. It reproduces the magnitude of SPV characterization as a function of incident light power in terms of a defect density assuming Gaussian defect distribution in the semiconductor bandgap. This allows an estimation of defect densities in surface layers of semiconductors and therefore increased exploitation of KPFM data.
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Boettcher, Lars, Lars Boettcher, S. Karaszkiewicz, D. Manessis, and A. Ostmann. "Embedded Power Modules – A new approach using Power Core and High Power PCB." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (January 1, 2015): 000906–37. http://dx.doi.org/10.4071/2015dpc-tp42.
Повний текст джерелаАнотація:
Power electronics packaging applications has strong demands regarding reliability and cost. The fields of developments reach from low power converter modules, over single or multichip MOSFET or IGBT packages, up to high power applications, like needed e.g. for solar inverters and automotive applications. This paper will give an overview about these applications and a description of each ones demand. The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductance. Additionally bond wires result in a high stray inductance which limits the switching frequency. The embedding of chips using Printed Circuit Board (PCB) technology offers a solution for many of the problems in power packaging. This paper will show today's available power packages and power modules, realized in industrial production as well as in European research projects. All technologies which are used are based on PCB materials and processes. Chips are mounted to Cu foils, lead frames, high power PCBs or even ceramic substrates, embedded by vacuum lamination of laminate sheets and electrically connected by laser drilling and Cu plating. A new approach for embedded power modules will be presented in detail. In this project, different application fields are covered, ranging from 50 W over 500 W to 50kW power modules for different applications like single chip packages, over power control units for pedelec (Pedal Electric Cycle), to inverter modules for automotive applications. This approach will focus on a power core base structure for the embedded semiconductor, which is then connected to a high power PCB. The connection to the embedded die is realized by direct copper connection only. The technology principle will be described in detail. Frist manufactured demonstrators will be presented. The presented new approach for the realization of a power core structure offers new possibilities for the module manufacturing, avoiding soldering or Ag sintering of the power semiconductors and the handling of thick copper substrates during the embedding process.
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Han Jinliang, 韩金樑, 张俊 Zhang Jun, 单肖楠 Shan Xiaonan, 秦莉 Qin Li та 王立军 Wang Lijun. "基于半导体激光合束技术的高功率加热光源". Acta Optica Sinica 41, № 22 (2021): 2214001. http://dx.doi.org/10.3788/aos202141.2214001.
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Kim, In Yea, Gi hwan Lim, Chae Yoon Kim, Min-Jeong Lee, Jaehun Kim, Dong Hyun Kim, and Jae-Hong Lim. "Fabrication and Characterization of Conductive FeCo@Au Nanowire Alloys for Semiconductor Connector." ECS Meeting Abstracts MA2022-02, no. 17 (October 9, 2022): 856. http://dx.doi.org/10.1149/ma2022-0217856mtgabs.
Повний текст джерелаАнотація:
A semiconductor test socket is one of the essential components for final electrical and performance testing of semiconductors. Due to the miniaturization of semiconductors, fine pinching of test sockets is required, so research on connectors for semiconductor inspection capable of fine processing is being actively conducted. The connector for semiconductor inspection consists of a powder coated with conductive powder on a magnetic material and rubber, and an electrical signal is transmitted through the conductive powder. A finer pitch rubber test socket shall maintain the electrical characteristics (resistance) at the same level, even though a smaller conductive path is formed as the gap between conductive paths narrows to respond to the increase in demand for fine pitch products. Therefore, in this study, a technique for forming a conductive pathway between conductive powders to maintain the electrical properties of a semiconductor socket for fine pitch is introduced. In order to effectively improve a thin conductive path, a conductive nanowire was prepared to form a conductive pathway between conductive powders. Fig. 1 shows the schematic diagram for the fabrication of FeCo nanowires. FeCo nanowires were synthesized through electroplating using AAO (Anodic Aluminum Oxide) as a template, and Au as a conductive material was coated on the surface of FeCo wires through an electrochemical method to synthesize FeCo@Au. To uniformly coat Au on the surface of the FeCo wire during the coating process, sonication, vortex, and stay three methods were compared, as shown in Fig. 2. As a result of confirming the surface shape by SEM, the most uniform method was confirmed by the vortex method. In addition, the magnetic properties of FeCo@Au synthesized with a smooth surface were analyzed through VMS (Vibrating Sample Magnetometer). As a result, it can be confirmed that alignment through magnetism is possible. From these results, it was confirmed that the method of increasing the electrical conductivity by adding a wire to reduce resistance of semiconductor connector. Figure 1
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Samedov, Victor V. "Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry." EPJ Web of Conferences 170 (2018): 01014. http://dx.doi.org/10.1051/epjconf/201817001014.
Повний текст джерелаАнотація:
Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.
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Chen, Cheng, Meixiao Wang, Jinxiong Wu, Huixia Fu, Haifeng Yang, Zhen Tian, Teng Tu, et al. "Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se." Science Advances 4, no. 9 (September 2018): eaat8355. http://dx.doi.org/10.1126/sciadv.aat8355.
Повний текст джерелаАнотація:
Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.
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Hagmann, Mark J., Dmitry A. Yarotski, and Marwan S. Mousa. "Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope." Microscopy and Microanalysis 23, no. 2 (December 20, 2016): 443–48. http://dx.doi.org/10.1017/s1431927616012563.
Повний текст джерелаАнотація:
AbstractQuasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.
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Fesenko, Artem, Oleksandr Matiushkin, Oleksandr Husev, Dmitri Vinnikov, Ryszard Strzelecki, and Piotr Kołodziejek. "Design and Experimental Validation of a Single-Stage PV String Inverter with Optimal Number of Interleaved Buck-Boost Cells." Energies 14, no. 9 (April 25, 2021): 2448. http://dx.doi.org/10.3390/en14092448.
Повний текст джерелаАнотація:
Increasing converter power density is a problem of topical interest. This paper discusses an interleaved approach of the efficiency increase in the buck-boost stage of an inverter with unfolding circuit in terms of losses in semiconductors, output voltage ripples and power density. Main trends in the power converter development are reviewed. A losses model was designed and used for the proposed solution to find an optimal number of interleaved cells. It describes static and dynamic losses in semiconductor switches for buck and boost mode. The presented calculation results demonstrate the efficiency of the interleaved approach for photovoltaic system. 1 kW power converter prototype was designed with two parallel dc-dc cells for experimental verification of obtained theoretical results. The experimental results confirm theoretical statements.
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Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon, and Jing Li. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (July 1, 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.
Повний текст джерелаАнотація:
The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes observed over the years in silicon semiconductor technologies. These industry changes include: the move from aluminum to copper interconnect metallurgy, increases in wafer size, decreases in pad pitch, and the use of Low-K dielectrics. In contrast, the direct transfer of these WLP technologies to compound semiconductor devices, like GaAs, SiC, InP, GaN, and sapphire; has been limited due to a number of technical compatibility issues, several perceived compatibility issues, and some business concerns From a technical standpoint, many compound semiconductor devices contain fragile air bridges, gold bond pads, topographical cavities and trenches, and have a number of unique bulk material properties which are sensitive to the mechanical and chemical processes associated with the standard WLP operations used for silicon wafers. In addition, most of the newer contract manufacturing companies and foundries have implemented mostly 200 and 300 mm wafer capabilities into their facilities. This limits the number of places that one can outsource the processing of 100 and 150 mm compound semiconductor wafers. Companies that are processing large numbers of silicon based semiconductor wafers at their facilities are reluctant to process many of these compound semiconductors because there is a perceived risk of cross contamination between the different wafer materials. Companies are not willing to risk their current business of processing silicon wafers by introducing these new materials into existing process flows. From a business perspective, many companies are reluctant to take the liability risks associated with some of the very high-value compound semiconductors. In addition, the volumes for many of the compound semiconductor devices are very small compared with silicon based devices, thus making it hard to justify interruption in the silicon wafer flows to accommodate these lower volume products. In spite of these issues and perceptions, the markets for compound semiconductors are expanding. Several high profile examples include the increasing number of frequency and power management devices going into cell phones, light emitting diodes, and solar cells The strategy for the work described in this paper is to protect all structures and surfaces with either a spin-on resist or a laminated film during each step in the process flow. These layers will protect the wafer from mechanical and chemical damage, and at the same time protect the fab from contamination by the compound semiconductor.
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Siva Subramanian, S., R. Saravanakumar, Bibhu Prasad Ganthia, S. Kaliappan, Surafel Mustefa Beyan, Maitri Mallick, Monalisa Mohanty, and G. Pavithra. "A Comprehensive Examination of Bandgap Semiconductor Switches." Advances in Materials Science and Engineering 2021 (September 25, 2021): 1–8. http://dx.doi.org/10.1155/2021/3188506.
Повний текст джерелаАнотація:
Improvements in the material characteristics of bandgap semiconductors allow the use of high-temperature, high-voltage, and fast switch rates in power devices. Another good reason for creating new Si power converter devices is that previous models perform poorly. The implementation of novel power electronic converters means high energy efficiency but a more logical use of electricity. At this moment, titanium dioxide and gallium nitride are the most prospective semiconductor materials because of their great features, established technology, and enough supply of raw components. This study is focused on providing an in-depth look at recent developments in manufacturing Si-C- and high-powered electronic components and showcasing the whole scope of the newly developing product generation.
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Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (September 30, 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.
Повний текст джерелаАнотація:
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and gallium nitride, are likely candidates to replace silicon in the near future for high power applications as silicon is fast approaching its performance limits. Wide-bandgap power semiconductor devices enable breakthrough circuit performance and energy efficiency gains in a wide range of potential applications. The U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E) has invested in WBG semiconductors over the past ten years targeting the barriers to widespread adoption of WBGs in power electronics including material and device development. Under ARPA-E projects, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of WBGs. This includes super-junction devices and light triggered photoconductive devices for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Advanced WBG device ideas are additionally being explored including 3D device structures, WBG integrated circuits, and neutron detectors The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
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Garkavenko, A. S., V. A. Mokritsky, O. V. Maslov, and A. V. Sokolov. "Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background." Science & Technique 19, no. 4 (August 5, 2020): 311–19. http://dx.doi.org/10.21122/2227-1031-2020-19-4-311-319.
Повний текст джерелаАнотація:
. Catastrophic degradation takes place in case of reaching critical values of laser radiation density power in semiconductor lasers with electronically pumped energy made from single crystals of some compounds. It has been accompanied by mechanical destruction of the surface at resonator ends, an irreversible decrease in radiation power and an increase in generation threshold. Moreover, during the catastrophic degradation of semiconductor lasers under the action of intrinsic radiation, significant changes in the crystal structure occur within the single crystal: dislocation density reaches a value more 1012–1015 cm–2. It has been shown that initial density of dislocations and critical power density of the intrinsic radiation are inversely proportional. Thus, the degradation process of semiconductor lasers is directly related to generation and multiplication of dislocations during laser operation. Mechanical destruction of a crystal lattice occurs at critical values of laser radiation power and dislocation density. To clarify the proposed mechanism for the degradation of semiconductor lasers, it is necessary to take into account an effect of dislocations on optical properties of semiconductors. Typically, this effect is considered as follows: dislocations cause an appearance of a local deformation field and, in addition, form space-charge regions that surround a dislocation core in the form of a charged tube. The paper proposes a model of the phenomenon under study: large stresses arise in the dislocation core, leading to a displacement of individual atoms and deformation of the crystal lattice. Lattice deformation in the dislocation core leads to a local change in the width of a forbidden band. This change value is about 10–2 eV for a screw dislocation and 10–1 eV for a boundary dislocation. The mechanism of this change is that aforementioned deformation leads to a multiple rupture of electronic bonds and an increase in the electron concentration in the dislocation core to approximately value 1018 cm–3. The developed analytical model of the degradation mechanism allows to perform selection of a semiconductor and estimation of a laser operating mode under conditions of increased radiation power.
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Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Повний текст джерелаАнотація:
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors are likely candidates to replace silicon-based semiconductors in the near future seeing as Silicon is fast approaching its performance limits for high power requirements. Wide-bandgap power semiconductor devices offer breakthrough circuit performance enabling low losses, high switching frequencies, and high temperature operation which will allow for enormous energy efficiency gains in a wide range of potential applications. In the past ten years, the U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E), which was established to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, has invested in WBG semiconductors including material and device-centric programs along with application specific programs targeting the barriers to widespread adoption in power electronics. Under these ARPA-E programs, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of the devices including the development of WBG super-junction devices. Light triggered photoconductive WBG devices are also being investigated for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Other WBG device ideas are also being explored under ARPA-E programs including WBG integrated circuits and neutron detectors. The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
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Henning, Stephan W., Luke Jenkins, Sidni Hale, Christopher G. Wilson, John Tennant, Justin Moses, Mike Palmer, and Robert N. Dean. "Manual Assembly of 400um Bumped-Die GaN Power Semiconductor Devices." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000514–23. http://dx.doi.org/10.4071/isom-2012-poster_hale.
Повний текст джерелаАнотація:
Until recently, power semiconductors were usually produced as TO, power-PAK, and D-PAK style packaging, due to die size, thermal dissipation requirements, and the vertical flow of current through the devices. The introduction of GaN to power semiconductors has allowed manufactures to produce devices with approximately 9% the footprint of similar rated D-PAK Si MOSFETs. In addition, GaN semiconductors have much better theoretical limits of specific on-resistance to breakdown voltage, when compared to Si and SiC. As of now, GaN devices offer very good performance at much less the cost of SiC, very small footprints, no reverse recovery losses of a body diode, very low RDS(ON), and very fast turn-on and turn-off times due to QGS in single-digit nC range. GaN semiconductors are expected to make vast improvements over the next decade. Unfortunately, this decrease in package size has made design prototyping significantly more challenging. Traditional manual solder iron assembly is not sufficient for these devices. Difficulties include board design, device handling, alignment, solder reflow, flux residue removal, and post-assembly inspection. The EPC 2014 and 2015 devices both have a 4mm pitch and are 1.85mm2 and 6.70mm2, respectively. In many situations, the decreased pitch and small overall size of these devices mandate the use of automated assembly equipment, such as a pick & place, to ensure quality and repeatability of assembly. However, this may not be feasible for initial prototyping, due to cost and time constraints. Here we will present a technique for manual assembly of these chip scale devices, applied specifically to the EPC 2014 and 2015. This should decrease the cost and turn time for prototype assembly when utilizing these types of chip scale packaged power semiconductor devices.
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Chromy, Stephan, Kai Rathjen, Sebastian Fahlbusch, Klaus F. Hoffmann, and Stefan Dickmann. "Influence of an Electrically Non-Conducting Heat Sink for Power Semiconductors on Radiated Interferences." Advances in Radio Science 16 (September 4, 2018): 117–22. http://dx.doi.org/10.5194/ars-16-117-2018.
Повний текст джерелаАнотація:
Abstract. Power semiconductors are used in a growing number of applications. Furthermore, faster switching transients and therefore higher switching frequencies can be realised. This leads to higher radiated interferences at higher frequencies. In power electronic applications, often a cooling concept for the semiconductors is required to comply with the allowed temperature range. Typically, heat sinks are made of aluminium and their conductive behaviour can cause EMC problems. Via capacitive coupling, voltage transients are transferred from the power semiconductor to the heat sink, so that the heat sink behaves as an antenna and radiated interferences occur. Furthermore, a common mode current will appear if the heat sink is grounded. In this paper, a promising approach to reduce radiated interferences from the heat sink and solve the common mode issue by using an electrically isolating ceramic heat sink is presented. The influence of an aluminium nitride ceramic heat sink on cooling performance and EMC behaviour has been investigated. For this purpose, two geometrical identically heat sinks made from aluminium and aluminium nitride have been compared regarding thermal performance and radiated interferences characterised by S-parameters.
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BRATANOVSKII, Sergei, Yerdos AMANKULOV, and Ilya MEDVEDEV. "MULTI-POINTED FIELD-EMISSION CATHODE AS A GENERATOR OF HIGHFREQUENCY OSCILLATIONS." Periódico Tchê Química 17, no. 36 (December 20, 2020): 542–53. http://dx.doi.org/10.52571/ptq.v17.n36.2020.557_periodico36_pgs_542_553.pdf.
Повний текст джерелаАнотація:
Semiconductor field-emission cathodes have gained considerable popularity in modern radio electronics and electronic optics due to the high-power generation of the electron beam in the external electric field at temperatures close to the room ones. However, their wide application is restricted by the high dependence of the electron emission current on the value of the applied field and geometrical parameters of the cathode. This study aimed to examine the effect of resonance processes on amplifying the field emission of the multi-pointed semiconductor cathode. Modeling the behavior of resonant tunneling of electrons from semiconductors to vacuum was simulated by solving the one-dimensional Schrodinger’s equation, and the amplification due to resonant processes was estimated. The modeling results showed that as the electric field increases, the resonance conditions shift towards low energy levels. With the increase in the width of the barrier for the electron inside the solid body, the resonance conditions shift towards higher energies. It has been established that in onedimensional semiconductors with electrons of low conductivity width, the resonant energy coincides with the Fermi level. These cathode properties are optimal for amplifying the emission current and reducing failures of vacuum electronic devices based on semiconductive field cathodes. The proposed technique can be used to study the regularities of emission amplification due to resonant processes in multipoint semiconductor cathodes with multilayered structure and with metal tips.
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Roccaforte, Fabrizio, Giuseppe Greco, Patrick Fiorenza, and Ferdinando Iucolano. "An Overview of Normally-Off GaN-Based High Electron Mobility Transistors." Materials 12, no. 10 (May 15, 2019): 1599. http://dx.doi.org/10.3390/ma12101599.
Повний текст джерелаАнотація:
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.
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Plesca, Adrian. "Thermal Analysis of Power Semiconductor Device in Steady-State Conditions." Energies 13, no. 1 (December 24, 2019): 103. http://dx.doi.org/10.3390/en13010103.
Повний текст джерелаАнотація:
Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results.