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Автор: Grafiati

Опубліковано: 14 березня 2023

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1

Weidemann, Stefan, Maximilian Kockert, Dirk Wallacher, Manfred Ramsteiner, Anna Mogilatenko, Klaus Rademann, and Saskia F. Fischer. "Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms." Journal of Nanomaterials 2015 (2015): 1–11. http://dx.doi.org/10.1155/2015/672305.

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Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi bulk=520 cm−1 →λSi nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

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2

Qu, Yongquan, Hailong Zhou, and Xiangfeng Duan. "Porous silicon nanowires." Nanoscale 3, no. 10 (2011): 4060. http://dx.doi.org/10.1039/c1nr10668f.

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3

BALAKRISHNAN, S., V. KRIPESH, and SER CHOONG CHONG. "FABRICATION OF SELF-ORGANIZED METAL NANOWIRE ARRAY USING POROUS ALUMINA TEMPLATE FOR OFF-CHIP INTERCONNECTS." International Journal of Nanoscience 05, no. 04n05 (August 2006): 453–58. http://dx.doi.org/10.1142/s0219581x06004620.

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Porous anodic alumina formation on silicon substrate is an example of a nanostructured porous array that is well-suited as a template for growing metallic nanowires. Commercial silicon wafer deposited with aluminum is used as substrate. Prior to anodization, the aluminum film is cleaned with mixture of acids solution to remove its native oxide growth. Anodization of aluminum film on silicon wafer is performed in oxalic acid solution to generate uniform and self-organized nanoporous alumina film. The pores are in the range of 60 nm diameter and pore density is about 9 × 109/ cm 2. The nanoporous alumina template is filled with nickel nanowires by wet electrodeposition process. After nanowire is grown on silicon wafer, the alumina template is etched and the as grown nickel nanowire forest is patterned using laser pruning method. The crystallinity pattern of the as grown nickel naowire forest is characterized using X-ray diffraction technique.

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4

Gentsar, P. O., A. V. Stronski, L. A. Karachevtseva, and V. F. Onyshchenko. "Optical Properties of Monocrystalline Silicon Nanowires." Physics and Chemistry of Solid State 22, no. 3 (August 31, 2021): 453–59. http://dx.doi.org/10.15330/pcss.22.3.453-459.

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The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.

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5

Vlad, Alexandru, Arava Leela Mohana Reddy, Anakha Ajayan, Neelam Singh, Jean-François Gohy, Sorin Melinte, and Pulickel M. Ajayan. "Roll up nanowire battery from silicon chips." Proceedings of the National Academy of Sciences 109, no. 38 (September 4, 2012): 15168–73. http://dx.doi.org/10.1073/pnas.1208638109.

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Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltrate-peel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li+ gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electrically interconnected copper nanoshells are conformally deposited around the silicon nanowires to stabilize the electrodes over extended cycles and provide efficient current collection. Using the above developed process we demonstrate an operational full cell 3.4 V lithium-polymer silicon nanowire (LIPOSIL) battery which is mechanically flexible and scalable to large dimensions.

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6

Kim, P. SG, Y. H. Tang, T. K. Sham, and S. T. Lee. "Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation." Canadian Journal of Chemistry 85, no. 10 (October 1, 2007): 695–701. http://dx.doi.org/10.1139/v07-054.

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We report a Si K-edge X-ray absorption fine structures (XAFS) study of silicon monoxide (SiO), the starting material for silicon nanowire preparation, its silicon nanowires, and the residue after the preparation of the starting material. The silicon nanowires were condensed onto three different substrates, (i) the wall of the furnace quartz tube, (ii) a porous silicon substrate, and (iii) a Si(100) silicon wafer. It was found that the Si K-edge XAFS of SiO exhibits identifiable spectral features characteristic of Si in 0 and 4 oxidation states as well as in intermediate oxidation states, while the SiO residue primarily shows features of Si(0) and Si(4). The XAFS suggest that SiO is not exactly a simple mixture of Si and SiO2. The silicon nanowires produced by the process exhibit morphology and luminescence property variations that depend on the nature of the substrate. X-ray excited optical luminescence (XEOL) at the O K-edge suggests an efficient energy transfer to the optical decay channel. The results and their implications are discussed.Key words: silicon nanowires, thermal evaporation, silicon monoxide, X-ray absorption fine structures, X-ray excited optical luminescence.

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7

Qu, Yongquan, Xing Zhong, Yujing Li, Lei Liao, Yu Huang, and Xiangfeng Duan. "Photocatalytic properties of porous silicon nanowires." Journal of Materials Chemistry 20, no. 18 (2010): 3590. http://dx.doi.org/10.1039/c0jm00493f.

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8

Lee, SeungYeon, Daniel Wratkowski, and Jeong-Hyun Cho. "Patterning Anodic Porous Alumina with Resist Developers for Patterned Nanowire Formation." MRS Proceedings 1785 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.566.

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ABSTRACTFormation of patterned metal and semiconductor (e.g. silicon) nanowires is achieved using anodic aluminum oxide (AAO) templates with porous structures of different heights resulting from an initial step difference made by etching the aluminum (Al) thin film with a photoresist developer prior to the anodization process. This approach allows for the growth of vertically aligned nanowire arrays on a metal substrate, instead of an oriented semiconductor substrate, using an electroplating or a chemical vapor deposition (CVD) process. The vertically aligned metal and semiconductor nanowires defined on a metal substrate could be applied to the realization of vertical 3D transistors, field emission devices, or nano-micro sensors for biological applications.

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9

Zhuang, Yanli, Tiesong Lin, Peng He, Panpan Lin, Limin Dong, Ziwei Liu, Leiming Wang, Shuo Tian, and Xinxin Jin. "The Formation Process and Strengthening Mechanism of SiC Nanowires in a Carbon-Coated Porous BN/Si3N4 Ceramic Joint." Materials 15, no. 4 (February 9, 2022): 1289. http://dx.doi.org/10.3390/ma15041289.

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Porous BN/Si3N4 ceramics carbon-coated by carbon coating were joined with SiCo38 (wt. %) filler. The formation process and strengthening mechanism of silicon carbide nanowires to the joint were analyzed in detail. The outcome manifests that there is no distinct phase change in the porous BN/Si3N4 ceramic without carbon-coated joint. The highest joint strength was obtained at 1320 °C (~38 MPa). However, a larger number of silicon carbide nanowires were generated in the carbon-coated joints. The highest joint strength of the carbon-coated joint was ~89 MPa at 1340 °C. Specifically, silicon carbide nanowires were formed by the reaction of the carbon coated on the porous BN/Si3N4 ceramic with the SiCo38 filler via the Vapor-Liquid-Solid (VLS) method and established a bridge in the joint. It grows on the β-SiC (111) crystal plane and the interplanar spacing is 0.254 nm. It has a bamboo-like shape with a resemblance to alloy balls on the ends, and its surface is coated with SiO2. The improved carbon-coated porous BN/Si3N4 joint strength is possibly ascribed to the bridging of nanowires in the joint.

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10

Kononina A. V., Balakshin Yu. V., Gonchar K.A., Bozhev I.V., Shemukhin A.A., and Chernysh V.S. "Amorphization of silicon nanowires upon irradiation with argon ions." Technical Physics Letters 48, no. 1 (2022): 53. http://dx.doi.org/10.21883/tpl.2022.01.52470.18989.

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The irradiation of silicon nanowires with Ar+ ions with the energy of 250 keV and fluences of 1013 to 1016 cm-2 was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films. Keywords: silicon nanowires, Raman spectroscopy, defect formation.

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11

Yoo, Jung-Keun, Jongsoon Kim, Hojun Lee, Jaesuk Choi, Min-Jae Choi, Dong Min Sim, Yeon Sik Jung, and Kisuk Kang. "Porous silicon nanowires for lithium rechargeable batteries." Nanotechnology 24, no. 42 (September 25, 2013): 424008. http://dx.doi.org/10.1088/0957-4484/24/42/424008.

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12

Jung, Daeyoon, Soo Gyeong Cho, Taeho Moon, and Honglae Sohn. "Fabrication and characterization of porous silicon nanowires." Electronic Materials Letters 12, no. 1 (January 2016): 17–23. http://dx.doi.org/10.1007/s13391-015-5409-y.

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13

Cao, Anping, Meixia Shan, Laura Paltrinieri, Wiel H. Evers, Liangyong Chu, Lukasz Poltorak, Johan H. Klootwijk, et al. "Enhanced vapour sensing using silicon nanowire devices coated with Pt nanoparticle functionalized porous organic frameworks." Nanoscale 10, no. 15 (2018): 6884–91. http://dx.doi.org/10.1039/c7nr07745a.

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14

Tit, Nacir, Zain H. Yamani, Giovanni Pizzi, and Michele Virgilio. "Comparison of confinement characters between porous silicon and silicon nanowires." Physics Letters A 375, no. 24 (June 2011): 2422–29. http://dx.doi.org/10.1016/j.physleta.2011.04.025.

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15

Rezvani, S. Javad, Nicola Pinto, Roberto Gunnella, Alessandro D’Elia, Augusto Marcelli, and Andrea Di Cicco. "Engineering Porous Silicon Nanowires with Tuneable Electronic Properties." Condensed Matter 5, no. 4 (September 28, 2020): 57. http://dx.doi.org/10.3390/condmat5040057.

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Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs.

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16

Wang, Zi, and Zhongyu Hou. "Room-temperature fabrication of a three-dimensional porous silicon framework inspired by a polymer foaming process." Chemical Communications 53, no. 63 (2017): 8858–61. http://dx.doi.org/10.1039/c7cc04309k.

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17

Kim, Jungkil, and Suk-Ho Choi. "Fabrication and Optical Characterization of Porous Silicon Nanowires." Journal of The Korean Society of Manufacturing Technology Engineers 21, no. 6 (December 15, 2012): 855–59. http://dx.doi.org/10.7735/ksmte.2012.21.6.855.

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18

Qu, Yongquan, Lei Liao, Yujing Li, Hua Zhang, Yu Huang, and Xiangfeng Duan. "Electrically Conductive and Optically Active Porous Silicon Nanowires." Nano Letters 9, no. 12 (December 9, 2009): 4539–43. http://dx.doi.org/10.1021/nl903030h.

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19

Chiappini, Ciro, Xuewu Liu, Jean Raymond Fakhoury, and Mauro Ferrari. "Biodegradable Porous Silicon Barcode Nanowires with Defined Geometry." Advanced Functional Materials 20, no. 14 (June 18, 2010): 2231–39. http://dx.doi.org/10.1002/adfm.201000360.

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20

Liao, Jiecui, Zhengcao Li, Guojing Wang, Chienhua Chen, Shasha Lv, and Mingyang Li. "ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature." Physical Chemistry Chemical Physics 18, no. 6 (2016): 4835–41. http://dx.doi.org/10.1039/c5cp07036h.

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21

Maher, Shaheer, Abel Santos, Tushar Kumeria, Gagandeep Kaur, Martin Lambert, Peter Forward, Andreas Evdokiou, and Dusan Losic. "Multifunctional microspherical magnetic and pH responsive carriers for combination anticancer therapy engineered by droplet-based microfluidics." Journal of Materials Chemistry B 5, no. 22 (2017): 4097–109. http://dx.doi.org/10.1039/c7tb00588a.

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Drug loaded luminescent porous silicon diatoms and magnetic bacterial nanowires were encapsulated within pH sensitive polymer forming biodegradable microcapsules using droplet-based microfluidics for targeting colorectal cancer.

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22

Yu, Qianqian, Haiping He, Lu Gan, and Zhizhen Ye. "The defect nature of photoluminescence from a porous silicon nanowire array." RSC Advances 5, no. 98 (2015): 80526–29. http://dx.doi.org/10.1039/c5ra13820e.

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23

Tang, Haiping, Chao Liu, and Haiping He. "Surface plasmon enhanced photoluminescence from porous silicon nanowires decorated with gold nanoparticles." RSC Advances 6, no. 64 (2016): 59395–99. http://dx.doi.org/10.1039/c6ra06019f.

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24

Parinova, Elena V., Sergey S. Antipov, Vladimir Sivakov, Iuliia S. Kakuliia, Sergey Yu Trebunskikh, Evgeny A. Belikov, and Sergey Yu Turishchev. "Dps protein localization studies in nanostructured silicon matrix by scanning electron microscopy." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 23, no. 4 (December 6, 2021): 644–48. http://dx.doi.org/10.17308/kcmf.2021.23/3741.

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The present work is related to the microscopic studies of the morphology of the planar and inner part of silicon nanowires arrays before and after immobilization with a natural nanomaterial, Dps protein of bacterial origin. Silicon nanowires were formed by metal-assisted wet chemical etching. To obtain the recombinant protein, Escherichia coli cells were used as excretion strain and purification were carried out using chromatography. The combination of silicon nanowires with protein molecules was carried out by layering at laboratory conditions followed by drying under air. The resulting hybrid material was studied by high-resolution scanning electron microscopy. Studies of the developed surface of the nanowires array were carried out before and after combining with the bioculture. The initial arrays of silicon wireshave a sharp boundaries in the planar part and in the depth of the array, transition layers are not observed. The diameter of the silicon nanowires is about 100 nm, the height is over a micrometer, while the distances between the nanowires are several hundred of nanometers. The pores formed in this way are available for filling with protein during the immobilization of protein.The effectiveness of using the scanning electron microscopy to study the surface morphology of the hybrid material “silicon wires – bacterial protein Dps” has been demonstrated. It is shown that the pores with an extremely developed surface can be combined with a bio-material by deposition deep into cavities. The protein molecules can easily penetrate through whole porous wires matrix array. The obtained results demonstrate the possibility of efficient immobilization of nanoscaled Dps protein molecules into an accessible and controllably developed surface of silicon nanowires.

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25

Gan, Lu, Haiping He, Qianqian Yu, and Zhizhen Ye. "Tuning the fluorescence intensity and stability of porous silicon nanowires via mild thermal oxidation." RSC Advances 7, no. 55 (2017): 34579–83. http://dx.doi.org/10.1039/c7ra05012g.

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26

KIM*, Jungkil. "Raman Scattering Property of Silicon Nanowires with Porous Surface." New Physics: Sae Mulli 71, no. 10 (October 29, 2021): 838–41. http://dx.doi.org/10.3938/npsm.71.838.

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27

Parinova, E. V., S. S. Antipov, V. Sivakov, E. A. Belikov, I. S. Kakuliia, S. Yu Trebunskikh, and S. Yu Turishchev. "Localization of Dps protein in porous silicon nanowires matrix." Results in Physics 35 (April 2022): 105348. http://dx.doi.org/10.1016/j.rinp.2022.105348.

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28

Chang, Chia-Chieh, and Chen-Shiung Chang. "Growth of ZnO Nanowires without Catalyst on Porous Silicon." Japanese Journal of Applied Physics 43, no. 12 (December 9, 2004): 8360–64. http://dx.doi.org/10.1143/jjap.43.8360.

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29

Peng, Kui-Qing, Xin Wang, and Shuit-Tong Lee. "Gas sensing properties of single crystalline porous silicon nanowires." Applied Physics Letters 95, no. 24 (December 14, 2009): 243112. http://dx.doi.org/10.1063/1.3275794.

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30

Kim, Do Hoon, Woong Lee, and Jae-Min Myoung. "Flexible multi-wavelength photodetector based on porous silicon nanowires." Nanoscale 10, no. 37 (2018): 17705–11. http://dx.doi.org/10.1039/c8nr05096a.

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31

Rumpf, K., P. Granitzer, and H. Krenn. "Beyond spin-magnetism of magnetic nanowires in porous silicon." Journal of Physics: Condensed Matter 20, no. 45 (October 23, 2008): 454221. http://dx.doi.org/10.1088/0953-8984/20/45/454221.

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32

Zhao, Yunshan, Lina Yang, Lingyu Kong, Mui Hoon Nai, Dan Liu, Jing Wu, Yi Liu, et al. "Ultralow Thermal Conductivity of Single-Crystalline Porous Silicon Nanowires." Advanced Functional Materials 27, no. 40 (August 25, 2017): 1702824. http://dx.doi.org/10.1002/adfm.201702824.

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33

Brus, Louis. "Luminescence of Silicon Materials: Chains, Sheets, Nanocrystals, Nanowires, Microcrystals, and Porous Silicon." Journal of Physical Chemistry 98, no. 14 (April 1994): 3575–81. http://dx.doi.org/10.1021/j100065a007.

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34

Sahoo, Mihir Kumar, and Paresh Kale. "Transfer of vertically aligned silicon nanowires array using sacrificial porous silicon layer." Thin Solid Films 698 (March 2020): 137866. http://dx.doi.org/10.1016/j.tsf.2020.137866.

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35

Кононина, А. В., Ю. В. Балакшин, К. А. Гончар, И. В. Божьев, А. А. Шемухин та В. С. Черныш. "Аморфизация кремниевых нанонитей при облучении ионами аргона". Письма в журнал технической физики 48, № 2 (2022): 11. http://dx.doi.org/10.21883/pjtf.2022.02.51912.18989.

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The irradiation of silicon nanowires with Ar+ ions with an energy of 250 keV and fluences from 1013 cm^-2 to 10^16 cm^-2 was carried out. The dependence of the destruction of the structure under the action of ion irradiation on the fluence is investigated by the Raman spectroscopy. It is shown that the amorphization of porous silicon occurs at higher dpa values than in thin silicon thin films.

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36

Zhanabaev, Z. Zh, T. Yu Grevtseva, K. A. Gonchar, G. K. Mussabek, D. Yermukhamed, A. A. Serikbayev, R. B. Assilbayeva, A. Zh Turmukhambetov, and V. Yu Timoshenko. "Nonlinear analysis of the degree of order and chaos of morphology of porous silicon nanostructures." Information Technology and Nanotechnology, no. 2391 (2019): 187–97. http://dx.doi.org/10.18287/1613-0073-2019-2391-187-197.

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This work has been done to identify quantitative criteria the degree of order and chaos morphology of porous layers consisting of silicon nanowire arrays. In order to fulfill the work, a method of using metal-assisted chemical etching has been utilized to produce nanowires. There has been done a work of digital processing of porous film images which were extracted by scanning electron microscope. Informational-entropic and Fourier analysis have been applied to quantitatively describe the degree of order and chaos in nanostructure distribution in the layers. Self-similarity of the layer morphology has been quantitatively described via its fractal dimensions by correlation method. The applied approach for image processing allows us to distinguish the morphological features of as-called "black" (more ordered) and "white" (less ordered) silicon layers, which are characterized by minimal and maximal optical reflection, respectively. From all of the methods of digital techniques that we have used the method for determining the conditional information of a chaotic set was proved to be the most informative.

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37

Mu, Yining, Tuo Zhang, Tianqi Chen, Fanqi Tang, Jikai Yang, Chunyang Liu, Zhangxiaoxiong Chen, et al. "Manufacturing and Characterization on aThree-Dimensional Random Resonator of Porous Silicon/TiO2 Nanowires for Continuous Light Pumping Lasing of Perovskite Quantum Dots." Nano 15, no. 02 (February 2020): 2050016. http://dx.doi.org/10.1142/s1793292020500162.

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In recent years, all inorganic bismuth lead-halide perovskite nanocrystals [CsPbX3 (X[Formula: see text][Formula: see text][Formula: see text]Cl, Br, I)] have received extensive attention due to their high performance in fluorescence quantum yield, narrow emission spectrum, and adjustable emission range. However, the disadvantages of high cost and poor stability have greatly limited the development prospects of the material. Here, in order to develop a perovskite quantum dot lasing cavity with high chemical stability, high quality factor and low fabrication cost, we have successfully fabricated a 3D random cavity device based on porous silicon/TiO2 nanowires. A TiO2 nanowire is grown on the porous silicon to form a 3D resonant cavity, and a perovskite quantum dot is spin-coated on the surface of the 3D resonant cavity to form a novel 3D complex film. The novel structure enhances the chemical stability and lasing quality factor of the resonant cavity while the fluorescence generated by the large quantum dots in the spatial interference structure constitutes the feedback loop, which will provide favorable support for the development of information optics.

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38

Liu, Lin. "Regulation of the morphology and photoluminescence of silicon nanowires by light irradiation." J. Mater. Chem. C 2, no. 45 (2014): 9631–36. http://dx.doi.org/10.1039/c4tc01431f.

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39

Wang, Shanshan, Shujia Huang, and Jijie Zhao. "Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays." Sensors 22, no. 7 (March 23, 2022): 2454. http://dx.doi.org/10.3390/s22072454.

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The optical properties of silicon nanowire arrays (SiNWs) are closely related to surface morphology due to quantum effects and quantum confinement effects of the existing semiconductor nanocrystal. In order to explore the influence of the diameters and distribution density of nanowires on the light absorption in the visible to near infrared band, we report the highly efficient method of multiple replication of versatile homogeneous Au films from porous anodic aluminum oxide (AAO) membranes by ion sputtering as etching catalysts; the monocrystalline silicon is etched along the growth templates in a fixed proportion chemical solution to form homogeneous ordered arrays of different morphology and distributions on the surface. In this system, we demonstrate that the synthesized nanostructure arrays can be tuned to exhibit different optical characteristics in the test wavelength range by adjusting the structural parameters of AAO membranes.

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40

Li, Junsheng, Qiuping Yu, Duan Li, Liang Zeng, and Shitao Gao. "Formation of hierarchical Si3N4 foams by protein-based gelcasting and chemical vapor infiltration." Journal of Advanced Ceramics 10, no. 1 (January 18, 2021): 187–93. http://dx.doi.org/10.1007/s40145-020-0431-4.

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AbstractSilicon nitride foams with a hierarchical porous structure was formed by the combination of protein-based gelcasting, chemical vapor infiltration, and in-situ growth of silicon nitride nanowires. The porosity of the foams can be controlled at 76.3–83.8 vol% with an open porosity of 70.2– 82.8 vol%. The pore size distribution was presented in three levels: < 2 μm (voids among grains and cross overlapping of silicon nitride nanowires (SNNWs)), 10–50 μm (cell windows), and >100 μm (cells). The resulted compressive strength of the porous bodies at room temperature can achieve up to 18.0±1.0 MPa (porosity = 76.3 vol%) while the corresponding retention rate at 800 ℃ was 58.3%. Gas permeability value was measured to be 5.16 (cm3·cm)/(cm2·s·kPa). The good strength, high permeability together with the pore structure in multiple scales enabled the foam materials for microparticle infiltration applications.

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41

Dawood, M. K., S. Tripathy, S. B. Dolmanan, T. H. Ng, T. Hao, and J. Lam. "Needles and Haystacks: Influence of Catalytic Metal Nanoparticles on Structural and Vibrational Properties and Morphology of Silicon Nanowires Synthesized by Metal-Assisted Chemical Etching." MRS Proceedings 1551 (2013): 101–10. http://dx.doi.org/10.1557/opl.2013.942.

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ABSTRACTMetal-assisted chemical etching (MACE) of silicon (Si) is a simple and low-cost process to fabricate Si nanostructures with varying aspect ratio and properties. In this work, we report on the structural and vibrational properties of Si nanostructures synthesized with varying metal catalyst. The morphology of the synthesized nanowires was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The optical and vibrational properties of the Si nanostructures were studied by photoluminescence and Raman spectroscopy using three different excitation sources (UV, visible and near-infrared) and are correlated to their microstructures. We propose that the excessive injection of holes into Si at the metal-Si interface and its diffusion to the nanowire surfaces facilitate the etching of Si on these surfaces, leading to a mesoporous network of Si nanocrystallites. When etched with catalytic Au nanoparticles, “hay-stacked” mesoporous Si nanowires were obtained. The straighter nanowires etched with Ag nanoparticles, consisted of a single crystalline core with a thin porous layer that decreased in thickness towards the base of the nanowire. This difference is due to the higher catalytic activity of Au compared to Ag for H2O2 decomposition. The SERRS observed during UV and visible Raman with Ag-etched Si nanowires and near-infrared Raman with Au-etched Si nanowires is due to the presence of the sunken metal nanoparticles. In addition, we explored the influence of varying H2O2 and HF concentration as well as the influence of increased etching temperature on the resultant nanostructured Si morphology. Such Si nanostructures may be useful for a wide range of applications such as photovoltaic and biological and chemical sensing.

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42

Buriak, Jillian M. "High surface area silicon materials: fundamentals and new technology." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 364, no. 1838 (November 29, 2005): 217–25. http://dx.doi.org/10.1098/rsta.2005.1681.

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Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

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43

Zabotnov, Stanislav V., Anastasiia V. Skobelkina, Ekaterina A. Sergeeva, Daria A. Kurakina, Aleksandr V. Khilov, Fedor V. Kashaev, Tatyana P. Kaminskaya, et al. "Nanoparticles Produced via Laser Ablation of Porous Silicon and Silicon Nanowires for Optical Bioimaging." Sensors 20, no. 17 (August 28, 2020): 4874. http://dx.doi.org/10.3390/s20174874.

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Modern trends in optical bioimaging require novel nanoproducts combining high image contrast with efficient treatment capabilities. Silicon nanoparticles are a wide class of nanoobjects with tunable optical properties, which has potential as contrasting agents for fluorescence imaging and optical coherence tomography. In this paper we report on developing a novel technique for fabricating silicon nanoparticles by means of picosecond laser ablation of porous silicon films and silicon nanowire arrays in water and ethanol. Structural and optical properties of these particles were studied using scanning electron and atomic force microscopy, Raman scattering, spectrophotometry, fluorescence, and optical coherence tomography measurements. The essential features of the fabricated silicon nanoparticles are sizes smaller than 100 nm and crystalline phase presence. Effective fluorescence and light scattering of the laser-ablated silicon nanoparticles in the visible and near infrared ranges opens new prospects of their employment as contrasting agents in biophotonics, which was confirmed by pilot experiments on optical imaging.

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44

Karbassian, F., B. Kheyraddini Mousavi, S. Rajabali, R. Talei, S. Mohajerzadeh, and E. Asl-Soleimani. "Formation of Luminescent Silicon Nanowires and Porous Silicon by Metal-Assisted Electroless Etching." Journal of Electronic Materials 43, no. 4 (February 12, 2014): 1271–79. http://dx.doi.org/10.1007/s11664-014-3051-3.

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45

Rezvani, S. J., Y. Mijiti, and A. Di Cicco. "Porous silicon nanowires phase transformations at high temperatures and pressures." Applied Physics Letters 119, no. 5 (August 2, 2021): 053101. http://dx.doi.org/10.1063/5.0057706.

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46

Brahiti, N., T. Hadjersi, and H. Menari. "Photocatalytic Degradation of Methylene Blue by Modified Porous Silicon Nanowires." Journal of New Technology and Materials 4, no. 1 (2014): 19–22. http://dx.doi.org/10.12816/0010291.

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47

Qin, Yuxiang, Yi Liu, and Yongyao Wang. "Aligned Array of Porous Silicon Nanowires for Gas-Sensing Application." ECS Journal of Solid State Science and Technology 5, no. 7 (2016): P380—P383. http://dx.doi.org/10.1149/2.0051607jss.

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48

Gan, Lu, Luwei Sun, Haiping He, and Zhizhen Ye. "Tuning the photoluminescence of porous silicon nanowires by morphology control." Journal of Materials Chemistry C 2, no. 15 (2014): 2668. http://dx.doi.org/10.1039/c3tc32354d.

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49

Zhong, Xing, Yongquan Qu, Yung-Chen Lin, Lei Liao, and Xiangfeng Duan. "Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires." ACS Applied Materials & Interfaces 3, no. 2 (January 18, 2011): 261–70. http://dx.doi.org/10.1021/am1009056.

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50

Bernardin, T., L. Dupré, L. Burnier, P. Gentile, D. Peyrade, M. Zelsmann, and D. Buttard. "Organized porous alumina membranes for high density silicon nanowires growth." Microelectronic Engineering 88, no. 9 (September 2011): 2844–47. http://dx.doi.org/10.1016/j.mee.2011.05.005.

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