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Статті в журналах з теми "Porous Silicon Nanowires"
Weidemann, Stefan, Maximilian Kockert, Dirk Wallacher, Manfred Ramsteiner, Anna Mogilatenko, Klaus Rademann, and Saskia F. Fischer. "Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms." Journal of Nanomaterials 2015 (2015): 1–11. http://dx.doi.org/10.1155/2015/672305.
Повний текст джерелаQu, Yongquan, Hailong Zhou, and Xiangfeng Duan. "Porous silicon nanowires." Nanoscale 3, no. 10 (2011): 4060. http://dx.doi.org/10.1039/c1nr10668f.
Повний текст джерелаBALAKRISHNAN, S., V. KRIPESH, and SER CHOONG CHONG. "FABRICATION OF SELF-ORGANIZED METAL NANOWIRE ARRAY USING POROUS ALUMINA TEMPLATE FOR OFF-CHIP INTERCONNECTS." International Journal of Nanoscience 05, no. 04n05 (August 2006): 453–58. http://dx.doi.org/10.1142/s0219581x06004620.
Повний текст джерелаGentsar, P. O., A. V. Stronski, L. A. Karachevtseva, and V. F. Onyshchenko. "Optical Properties of Monocrystalline Silicon Nanowires." Physics and Chemistry of Solid State 22, no. 3 (August 31, 2021): 453–59. http://dx.doi.org/10.15330/pcss.22.3.453-459.
Повний текст джерелаVlad, Alexandru, Arava Leela Mohana Reddy, Anakha Ajayan, Neelam Singh, Jean-François Gohy, Sorin Melinte, and Pulickel M. Ajayan. "Roll up nanowire battery from silicon chips." Proceedings of the National Academy of Sciences 109, no. 38 (September 4, 2012): 15168–73. http://dx.doi.org/10.1073/pnas.1208638109.
Повний текст джерелаKim, P. SG, Y. H. Tang, T. K. Sham, and S. T. Lee. "Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation." Canadian Journal of Chemistry 85, no. 10 (October 1, 2007): 695–701. http://dx.doi.org/10.1139/v07-054.
Повний текст джерелаQu, Yongquan, Xing Zhong, Yujing Li, Lei Liao, Yu Huang, and Xiangfeng Duan. "Photocatalytic properties of porous silicon nanowires." Journal of Materials Chemistry 20, no. 18 (2010): 3590. http://dx.doi.org/10.1039/c0jm00493f.
Повний текст джерелаLee, SeungYeon, Daniel Wratkowski, and Jeong-Hyun Cho. "Patterning Anodic Porous Alumina with Resist Developers for Patterned Nanowire Formation." MRS Proceedings 1785 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.566.
Повний текст джерелаZhuang, Yanli, Tiesong Lin, Peng He, Panpan Lin, Limin Dong, Ziwei Liu, Leiming Wang, Shuo Tian, and Xinxin Jin. "The Formation Process and Strengthening Mechanism of SiC Nanowires in a Carbon-Coated Porous BN/Si3N4 Ceramic Joint." Materials 15, no. 4 (February 9, 2022): 1289. http://dx.doi.org/10.3390/ma15041289.
Повний текст джерелаKononina A. V., Balakshin Yu. V., Gonchar K.A., Bozhev I.V., Shemukhin A.A., and Chernysh V.S. "Amorphization of silicon nanowires upon irradiation with argon ions." Technical Physics Letters 48, no. 1 (2022): 53. http://dx.doi.org/10.21883/tpl.2022.01.52470.18989.
Повний текст джерелаДисертації з теми "Porous Silicon Nanowires"
Manoharan, Gowtham. "Confined growth of carbon nanotubes and silicon nanowires in lateral porous alumina templates." Phd thesis, Ecole Polytechnique X, 2009. http://pastel.archives-ouvertes.fr/pastel-00005283.
Повний текст джерелаMing, Tingsen [Verfasser], Benjamin [Gutachter] Dietzek, and Sanjay [Gutachter] Mathur. "Porous silicon nanowires for hydrogen generation : mechanism and photocatalytic studies / Tingsen Ming ; Gutachter: Benjamin Dietzek, Sanjay Mathur." Jena : Friedrich-Schiller-Universität Jena, 2020. http://d-nb.info/1207320161/34.
Повний текст джерелаLefeuvre, Emmanuel. "Organized growth of semiconducting one-dimensional nanostructures in vertical porus templates for the fabrication of field effect transistors." Palaiseau, Ecole polytechnique, 2012. https://pastel.archives-ouvertes.fr/pastel-01063869.
Повний текст джерелаChiappini, Dottore Ciro. "Porous silicon nanoneedles for intracellular delivery of small interfering RNA." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-2671.
Повний текст джерелаtext
Cheng, Ching-Sheng, and 鄭景升. "The characteristics of ZnO nanowires grown on porous silicon by Vapor-Liquid-Soild method." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/19513360703475641949.
Повний текст джерела國立交通大學
光電工程所
91
We have successfully fabricated the ZnO nanowires under the optimum conditions on porous silicon (PS) substrates by vapor-liquid-solid method using chemical vapor transport and condensation system (CVTC). All the nanowires grown on PS showed a better uniformity in dimension and a high orientation in direction (002) than on silicon substrate from SEM images. From selected area electron diffraction(SAED) pattern and low temperature photoluminescence (LT-PL) measurement, ZnO nanowires showed a single crystalline structure and to have a good optical quality. At low temperature photoluminescence (LT-PL), the free and donor-bound exciton lines dominate the spectra, while with increasing temperature emission from free exciton grow rapidly and finally become the dominant line.
Yeh, Yu-Chun, and 葉禹君. "The characteristics of ZnO nanowires grown on porous silicon by Vapor-Liquid-Soild method." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/45347x.
Повний текст джерела國立清華大學
應用科學系所
105
In this study, the porous silicon were prepared by metal-assisted chemical etching method, and the effect of different gold coating time and etching time on the distribution of porous pores was discussed. Since gold is a catalyst for metal-assisted chemical etching, the area with gold coating will preferentially etched. In this way, the best distribution of the topography was chose for 35 seconds as the best parameter for etching. As well as the chemical vapor deposition method to grow zinc oxide nanostructures in porous silicon, therefore, the growth of zinc oxide depends on the location of porous silicon holes distribution. The etching time 3 and 5 minutes, the holes morphology is uniform. The etching time is chose here for 3 and 5 of minutes as the optimum parameter for growing zinc oxide. when the zinc oxide's growth time was 30 minutes of etching time of 3 minutes the distribution of zinc oxide nanowires the most uniform distribution, and zinc oxide nanowires average length of about 10um.The X-ray measurement showed that the zinc oxide nanowires were grown for 30 minutes in the pores having 3 minutes etching time grow in the crystal plane direction of (100), (101),(103),(110) and (002), and the crystal phase is ZnO(002) highly-preferred orientation. In the photoluminescence spectrum (PL), the zinc oxide nanowires emit light at the near-energy band gap, which is the essential luminescence of zinc oxide, and there is no light in the visible region, which means that there is no defect of zinc oxide. The Porous silicon with a etching time of 3 minutes and growth time of zinc oxide is 30 minutes had a field emission result. The available applied field size is 30 V / um, the turn-on field is 24 V / um, the maximum current density is 9x10-6 mA/cm2, and the field emission enhancement factor β is 884. In addition, the experiment can be found 99% of the zinc powder grow out of zinc oxide mostly were nanometer flower structures, , and zinc powder of 99.999% the nanowire structures were the distribution uniform. Therefore, that the purity of zinc powder will affect the morphology of zinc oxide nanostructures. Key words: zinc oxide, nanowires, porous silicon, metal-assisted chemical etching, chemical vapor deposition, field characteristics.
Частини книг з теми "Porous Silicon Nanowires"
Ge, Mingyuan. "Porous Silicon Nanowires." In Handbook of Porous Silicon, 1–12. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-04508-5_113-1.
Повний текст джерелаGe, Mingyuan. "Porous Silicon Nanowires." In Handbook of Porous Silicon, 203–14. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_113.
Повний текст джерелаRezvani, Seyed Javad, Yimin Mijiti, Federico Galdenzi, Luca Boarino, Roberto Gunnella, Augusto Marcelli, Nicola Pinto, and Andrea Di Cicco. "Structural Properties of Porous Silicon Nanowires: A Combined Characterization by Advanced Spectroscopic Techniques." In Synchrotron Radiation Science and Applications, 191–201. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-72005-6_15.
Повний текст джерелаChen, Fei, Feiyu Li, Kaiyu Wang, Qiang Shen, and Lianmeng Zhang. "Preparation of Zirconium Phosphate Bonded Silicon Nitride Porous Ceramics Reinforced by In-Situ Reacted Silicon Nitride Nanowires." In Ceramic Transactions Series, 15–24. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118889770.ch2.
Повний текст джерела"Porous Silicon Nanowires." In Silicon and Silicide Nanowires, 407–30. Jenny Stanford Publishing, 2016. http://dx.doi.org/10.1201/b15967-11.
Повний текст джерелаYao, Baodian, and Ning Wang. "Structure characterization of mesostructured Silica nanowires formed in Porous Alumina membranes." In Recent Progress in Mesostructured Materials - Proceedings of the 5th International Mesostructured Materials Symposium (IMMS2006), Shanghai, P.R. China, August 5-7, 2006, 105–8. Elsevier, 2007. http://dx.doi.org/10.1016/s0167-2991(07)80276-x.
Повний текст джерелаТези доповідей конференцій з теми "Porous Silicon Nanowires"
Antidormi, Aleandro, Diego Chiabrando, Maria Grazia Graziano, Luca Boarino, and Gianluca Piccinini. "Methodology modeling of MaE-fabricated Porous Silicon Nanowires." In 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). IEEE, 2014. http://dx.doi.org/10.1109/prime.2014.6872732.
Повний текст джерелаAbdulgafour, H. I., Z. Hassan, F. K. Yam, M. J. Jawad, Abdul Manaf Hashim, and Vijay K. Arora. "Growth of ZnO Nanowires Without Catalyst on Porous Silicon." In ENABLING SCIENCE AND NANOTECHNOLOGY: 2010 International Conference On Enabling Science And Nanotechnology Escinano2010. AIP, 2011. http://dx.doi.org/10.1063/1.3586945.
Повний текст джерелаAbdulgafour, H. I., Z. Hassan, F. K. Yam, M. J. Jawad, and N. K. Ali. "Growth of ZnO nanowires without catalyst on porous silicon." In 2010 International Conference on Enabling Science and Nanotechnology (ESciNano). IEEE, 2010. http://dx.doi.org/10.1109/escinano.2010.5700994.
Повний текст джерелаNajar, Adel, Ahmad Ali Al-Jabr, Ahmed Ben Slimane, M. A. Alsunaidi, Tien Khee Ng, Boon S. Ooi, Rachid Sougrat, and Dalaver H. Anjum. "Effective antireflection properties of porous silicon nanowires for photovoltaic applications." In 2013 18th International Conference on Digital Signal Processing (DSP). IEEE, 2013. http://dx.doi.org/10.1109/siecpc.2013.6550769.
Повний текст джерелаHsu, W. I., S. J. Wang, W. C. Tsai, W. C. Hsu, F. S. Tsai, and H. Y. Huang. "Enhanced Visible Light and Electron Field Emission of Porous Silicon Nanowires." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.p-13-4.
Повний текст джерелаGouda, Abdelaziz M., Nageh K. Allam, and Mohamed A. Swillam. "Facile omnidirectional black silicon based on porous and nonporous silicon nanowires for energy applications." In 2016 Photonics North (PN). IEEE, 2016. http://dx.doi.org/10.1109/pn.2016.7537973.
Повний текст джерелаAksenov, V. P., and G. N. Mikhailova. "Photophysical ablation of porous silicon as manifestation of mezoscopic force fluctuation in nanowires." In Rome and Frascati, Italy, edited by Ivan A. Shcherbakov, Anna Giardini, Vitali I. Konov, and Vladimir I. Pustovoy. SPIE, 2005. http://dx.doi.org/10.1117/12.633673.
Повний текст джерелаKim, K. H., E. Lefeuvre, A. Gohier, M. Chatelet, D. Pribat, B. S. Kim, and C. S. Cojocaru. "The organization of carbon nanotube and silicon nanowires using lateral-type porous anodic alumina." In SPIE NanoScience + Engineering, edited by Didier Pribat, Young-Hee Lee, and Manijeh Razeghi. SPIE, 2010. http://dx.doi.org/10.1117/12.863114.
Повний текст джерелаMa, Shuangyun, Ming Hu, Mingda Li, Jiran Liang, and Changqing Li. "Synthesis of tungsten oxide nanowires/porous silicon composite and its sensing properties for NO2." In 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2013. http://dx.doi.org/10.1109/nano.2013.6720924.
Повний текст джерелаXia, Yiqiu, and Si-Yang Zheng. "A mcirofluidic device of biodegradable porous silicon nanowires for size based capturing and releasing viruses." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7180956.
Повний текст джерела