Статті в журналах з теми "Polymer Charge Trapping Memory"
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Prime, D., S. Paul, and P. W. Josephs-Franks. "Gold nanoparticle charge trapping and relation to organic polymer memory devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 367, no. 1905 (October 28, 2009): 4215–25. http://dx.doi.org/10.1098/rsta.2009.0141.
Повний текст джерелаCasalbore-Miceli, Giuseppe, Nadia Camaioni, Alessandro Geri, Giovanni Ridolfi, Alberto Zanelli, Maria C. Gallazzi, Michele Maggini, and Tiziana Benincori. "“Solid state charge trapping”: Examples of polymer systems showing memory effect." Journal of Electroanalytical Chemistry 603, no. 2 (May 2007): 227–34. http://dx.doi.org/10.1016/j.jelechem.2007.02.007.
Повний текст джерелаMurari, Nishit M., Ye-Jin Hwang, Felix Sunjoo Kim, and Samson A. Jenekhe. "Organic nonvolatile memory devices utilizing intrinsic charge-trapping phenomena in an n-type polymer semiconductor." Organic Electronics 31 (April 2016): 104–10. http://dx.doi.org/10.1016/j.orgel.2016.01.015.
Повний текст джерелаRajeev, V. R., та K. N. Narayanan Unni. "Polymer electret-based organic field-effect transistor memory with a solution-processable bilayer (PαMS/ cross-linked PVP) gate dielectric". European Physical Journal Applied Physics 97 (2022): 17. http://dx.doi.org/10.1051/epjap/2022210175.
Повний текст джерелаWu, Chao, Yongping Dan, Wei Wang, Xiangyang Lu, and Xinqiang Wang. "Solution processed nonvolatile polymer transistor memory with discrete distributing molecular semiconductor microdomains as the charge trapping sites." Semiconductor Science and Technology 33, no. 9 (July 30, 2018): 095003. http://dx.doi.org/10.1088/1361-6641/aad2b9.
Повний текст джерелаHe, Dongwei, Hao Zhuang, Haifeng Liu, Hongzhang Liu, Hua Li, and Jianmei Lu. "Adjustment of conformation change and charge trapping in ion-doped polymers to achieve ternary memory performance." Journal of Materials Chemistry C 1, no. 47 (2013): 7883. http://dx.doi.org/10.1039/c3tc31759e.
Повний текст джерелаBaeg, Kang-Jun, Yong-Young Noh, and Dong-Yu Kim. "Charge transfer and trapping properties in polymer gate dielectrics for non-volatile organic field-effect transistor memory applications." Solid-State Electronics 53, no. 11 (November 2009): 1165–68. http://dx.doi.org/10.1016/j.sse.2009.07.003.
Повний текст джерелаLing, Haifeng, Wen Li, Huanqun Li, Mingdong Yi, Linghai Xie, Laiyuan Wang, Yangxing Ma, Yan Bao, Fengning Guo, and Wei Huang. "Effect of thickness of polymer electret on charge trapping properties of pentacene-based nonvolatile field-effect transistor memory." Organic Electronics 43 (April 2017): 222–28. http://dx.doi.org/10.1016/j.orgel.2017.01.017.
Повний текст джерелаZhang, Bo, Qihang Gao, Boping Wang, Hong Wang, Chao Lu, Jiashu Gao, Rui Zhao, and Xiaobing Yan. "Effects of oxygen conditions during deposition on memory performance of metal/HfO2/SiO2/Si structured charge trapping memory." Materials Research Express 6, no. 8 (May 10, 2019): 086306. http://dx.doi.org/10.1088/2053-1591/ab1df0.
Повний текст джерелаWang, Wei, Sun Kak Hwang, Kang Lib Kim, Ju Han Lee, Suk Man Cho, and Cheolmin Park. "Highly Reliable Top-Gated Thin-Film Transistor Memory with Semiconducting, Tunneling, Charge-Trapping, and Blocking Layers All of Flexible Polymers." ACS Applied Materials & Interfaces 7, no. 20 (May 15, 2015): 10957–65. http://dx.doi.org/10.1021/acsami.5b02213.
Повний текст джерелаLorenzi, Paolo, Rosario Rao, Gabriella Ghidini, Fabrizio Palma, and Fernanda Irrera. "Charge Trapping Non Volatile Memory." ECS Transactions 25, no. 7 (December 17, 2019): 269–76. http://dx.doi.org/10.1149/1.3203965.
Повний текст джерелаCampbell, Alasdair J., Donal D. C. Bradley, and David G. Lidzey. "Charge trapping in polymer diodes." Optical Materials 9, no. 1-4 (January 1998): 114–19. http://dx.doi.org/10.1016/s0925-3467(97)00145-6.
Повний текст джерелаEl-Atab, Nazek, Ayse Ozcan, Sabri Alkis, Ali K. Okyay, and Ammar Nayfeh. "Silicon nanoparticle charge trapping memory cell." physica status solidi (RRL) - Rapid Research Letters 8, no. 7 (May 12, 2014): 629–33. http://dx.doi.org/10.1002/pssr.201409157.
Повний текст джерелаPing-Hung Tsai, Kuei-Shu Chang-Liao, Te-Chiang Liu, Tien-Ko Wang, Pei-Jer Tzeng, Cha-Hsin Lin, L. S. Lee, and Ming-Jinn Tsai. "Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer." IEEE Electron Device Letters 30, no. 7 (July 2009): 775–77. http://dx.doi.org/10.1109/led.2009.2022287.
Повний текст джерелаMeng, Jianling, Rong Yang, Jing Zhao, Congli He, Guole Wang, Dongxia Shi, and Guangyu Zhang. "Nanographene charge trapping memory with a large memory window." Nanotechnology 26, no. 45 (October 22, 2015): 455704. http://dx.doi.org/10.1088/0957-4484/26/45/455704.
Повний текст джерелаSpassov, Dencho, Albena Paskaleva, Elżbieta Guziewicz, Wojciech Wozniak, Todor Stanchev, Tsvetan Ivanov, Joanna Wojewoda-Budka, and Marta Janusz-Skuza. "Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers." Materials 15, no. 18 (September 9, 2022): 6285. http://dx.doi.org/10.3390/ma15186285.
Повний текст джерелаFukuda, M., T. Nakanishi, and Y. Nara. "New nonvolatile memory with charge-trapping sidewall." IEEE Electron Device Letters 24, no. 7 (July 2003): 490–92. http://dx.doi.org/10.1109/led.2003.815002.
Повний текст джерелаLiu, Jinqiu, Jianxin Lu, Bo Xu, Yidong Xia, Jiang Yin, and Zhiguo Liu. "Al2O3–Cu2O composite charge-trapping nonvolatile memory." Journal of Materials Science: Materials in Electronics 28, no. 1 (August 25, 2016): 928–33. http://dx.doi.org/10.1007/s10854-016-5609-8.
Повний текст джерелаSpassov, Dencho, and Albena Paskaleva. "Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks." Nanomaterials 13, no. 17 (August 30, 2023): 2456. http://dx.doi.org/10.3390/nano13172456.
Повний текст джерелаShen, Yuxin, Zhaohao Zhang, Qingzhu Zhang, Feng Wei, Huaxiang Yin, Qianhui Wei, and Kuo Men. "A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage." RSC Advances 10, no. 13 (2020): 7812–16. http://dx.doi.org/10.1039/d0ra00034e.
Повний текст джерелаLIU, JING, and HAI-BO ZHANG. "SELF-CONSIST CHARGING PROCESS OF POLYMER IRRADIATED BY INTERMEDIATE-ENERGY ELECTRON BEAM." Surface Review and Letters 21, no. 05 (September 29, 2014): 1450062. http://dx.doi.org/10.1142/s0218625x14500620.
Повний текст джерелаEl-Atab, Nazek, Irfan Saadat, Krishna Saraswat, and Ammar Nayfeh. "Nanoislands-Based Charge Trapping Memory: A Scalability Study." IEEE Transactions on Nanotechnology 16, no. 6 (November 2017): 1143–46. http://dx.doi.org/10.1109/tnano.2017.2764745.
Повний текст джерелаLiu, Y., T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, et al. "(Invited) Charge Trapping Type SOI-FinFET Flash Memory." ECS Transactions 61, no. 2 (March 24, 2014): 263–80. http://dx.doi.org/10.1149/06102.0263ecst.
Повний текст джерелаMalliaras, G. G., V. V. Krasnikov, H. J. Bolink, and G. Hadziioannou. "Control of charge trapping in a photorefractive polymer." Applied Physics Letters 66, no. 9 (February 27, 1995): 1038–40. http://dx.doi.org/10.1063/1.114230.
Повний текст джерелаGong, Changjie, Xin Ou, Bo Xu, Xuexin Lan, Yan Lei, Jianxin Lu, Yan Chen, et al. "Enhanced charge storage performance in AlTi4Ox/Al2O3multilayer charge trapping memory devices." Japanese Journal of Applied Physics 53, no. 8S3 (July 7, 2014): 08NG02. http://dx.doi.org/10.7567/jjap.53.08ng02.
Повний текст джерелаSpecht, M., H. Reisinger, F. Hofmann, T. Schulz, E. Landgraf, R. J. Luyken, W. Rösner, M. Grieb, and L. Risch. "Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications." Solid-State Electronics 49, no. 5 (May 2005): 716–20. http://dx.doi.org/10.1016/j.sse.2004.09.003.
Повний текст джерелаChoi, Sangmoo, Myungjun Cho, Chandan B. Samantaray, Sanghun Jeon, Chungwoo Kim, and Hyunsang Hwang. "Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2as Charge-Trapping Layer and Al2O3as Blocking Layer." Japanese Journal of Applied Physics 43, No. 7A (June 18, 2004): L882—L884. http://dx.doi.org/10.1143/jjap.43.l882.
Повний текст джерелаJin, Rui, Xiaoyan Liu, Gang Du, Jinfeng Kang, and Ruqi Han. "Effect of trapped charge accumulation on the retention of charge trapping memory." Journal of Semiconductors 31, no. 12 (December 2010): 124016. http://dx.doi.org/10.1088/1674-4926/31/12/124016.
Повний текст джерелаEl-Atab, Nazek, Ayman Rizk, Ali K. Okyay, and Ammar Nayfeh. "Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer." AIP Advances 3, no. 11 (November 2013): 112116. http://dx.doi.org/10.1063/1.4832237.
Повний текст джерелаWang Jia-Yu, Dai Yue-Hua, Zhao Yuan-Yang, Xu Jian-Bin, Yang Fei, Dai Guang-Zhen, and Yang Jin. "Research on charge trapping memory’s over erase." Acta Physica Sinica 63, no. 20 (2014): 203101. http://dx.doi.org/10.7498/aps.63.203101.
Повний текст джерелаHuang, X., and P. T. Lai. "HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications." ECS Transactions 45, no. 3 (April 27, 2012): 355–60. http://dx.doi.org/10.1149/1.3700900.
Повний текст джерелаSpecht, M., R. Kommling, F. Hofmann, V. Klandzievski, L. Dreeskornfeld, W. Weber, J. Kretz, et al. "Novel Dual Bit Tri-Gate Charge Trapping Memory Devices." IEEE Electron Device Letters 25, no. 12 (December 2004): 810–12. http://dx.doi.org/10.1109/led.2004.838621.
Повний текст джерелаHuang, X. D., Johnny K. O. Sin, and P. T. Lai. "BaTiO3 as charge-trapping layer for nonvolatile memory applications." Solid-State Electronics 79 (January 2013): 285–89. http://dx.doi.org/10.1016/j.sse.2012.09.005.
Повний текст джерелаKang, Sung Hoon, Todd Crisp, Ioannis Kymissis, and Vladimir Bulović. "Memory effect from charge trapping in layered organic structures." Applied Physics Letters 85, no. 20 (November 15, 2004): 4666–68. http://dx.doi.org/10.1063/1.1819991.
Повний текст джерелаTang, Zhenjie, Dongqiu Zhao, Rong Li, and Xinhua Zhu. "Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory." Transactions on Electrical and Electronic Materials 15, no. 1 (February 25, 2014): 16–19. http://dx.doi.org/10.4313/teem.2014.15.1.16.
Повний текст джерелаKunz, A., P. W. M. Blom, and J. J. Michels. "Charge carrier trapping controlled by polymer blend phase dynamics." Journal of Materials Chemistry C 5, no. 12 (2017): 3042–48. http://dx.doi.org/10.1039/c6tc05065d.
Повний текст джерелаWang, Jer, Chyuan Kao, Chien Wu, Chun Lin, and Chih Lin. "Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory." Nanomaterials 8, no. 10 (October 8, 2018): 799. http://dx.doi.org/10.3390/nano8100799.
Повний текст джерелаKobayashi, Kiyoteru, and Hiroshi Mino. "Hole trapping capability of silicon carbonitride charge trap layers." European Physical Journal Applied Physics 91, no. 1 (July 2020): 10101. http://dx.doi.org/10.1051/epjap/2020190297.
Повний текст джерелаShih, Wen-Chieh, Chih-Hao Cheng, Joseph Ya-min Lee, and Fu-Chien Chiu. "Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications." Advances in Materials Science and Engineering 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/548329.
Повний текст джерелаYoo, Jae-Hoon, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, and Hee-Chul Lee. "Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices." Nanomaterials 13, no. 11 (June 1, 2023): 1785. http://dx.doi.org/10.3390/nano13111785.
Повний текст джерелаKurtash, Vladislav, Sebastian Thiele, Sobin Mathew, Heiko O. Jacobs, and Joerg Pezoldt. "Designing MoS2 channel properties for analog memory in neuromorphic applications." Journal of Vacuum Science & Technology B 40, no. 3 (May 2022): 030602. http://dx.doi.org/10.1116/6.0001815.
Повний текст джерелаZhu, Hao, John E. Bonevich, Haitao Li, Curt A. Richter, Hui Yuan, Oleg Kirillov, and Qiliang Li. "Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks." Applied Physics Letters 104, no. 23 (June 9, 2014): 233504. http://dx.doi.org/10.1063/1.4883717.
Повний текст джерелаYang, Tao, Hong Wang, Bo Zhang, and Xiaobing Yan. "Enhanced memory characteristics of charge trapping memory by employing graphene oxide quantum dots." Applied Physics Letters 116, no. 10 (March 9, 2020): 103501. http://dx.doi.org/10.1063/1.5135623.
Повний текст джерелаHuang, X. D., P. T. Lai, L. Liu, and J. P. Xu. "Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications." Applied Physics Letters 98, no. 24 (June 13, 2011): 242905. http://dx.doi.org/10.1063/1.3601473.
Повний текст джерелаJi, Yongsung, Minhyeok Choe, Byungjin Cho, Sunghoon Song, Jongwon Yoon, Heung Cho Ko, and Takhee Lee. "Organic nonvolatile memory devices with charge trapping multilayer graphene film." Nanotechnology 23, no. 10 (February 24, 2012): 105202. http://dx.doi.org/10.1088/0957-4484/23/10/105202.
Повний текст джерелаHuang, X. D., P. T. Lai, and J. K. O. Sin. "Charge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications." ECS Solid State Letters 1, no. 5 (September 10, 2012): Q45—Q47. http://dx.doi.org/10.1149/2.005206ssl.
Повний текст джерелаYun-Cheng, Song, Liu Xiao-Yan, Du Gang, Kang Jin-Feng, and Han Ru-Qi. "Carriers recombination processes in charge trapping memory cell by simulation." Chinese Physics B 17, no. 7 (July 2008): 2678–82. http://dx.doi.org/10.1088/1674-1056/17/7/053.
Повний текст джерелаPadovani, A., L. Larcher, D. Heh, and G. Bersuker. "Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics." IEEE Electron Device Letters 30, no. 8 (August 2009): 882–84. http://dx.doi.org/10.1109/led.2009.2024622.
Повний текст джерелаZhu, Hao, Christina A. Hacker, Sujitra J. Pookpanratana, Curt A. Richter, Hui Yuan, Haitao Li, Oleg Kirillov, Dimitris E. Ioannou, and Qiliang Li. "Non-volatile memory with self-assembled ferrocene charge trapping layer." Applied Physics Letters 103, no. 5 (July 29, 2013): 053102. http://dx.doi.org/10.1063/1.4817009.
Повний текст джерелаMondal, Sandip, and V. Venkataraman. "All inorganic solution processed three terminal charge trapping memory device." Applied Physics Letters 114, no. 17 (April 29, 2019): 173502. http://dx.doi.org/10.1063/1.5089743.
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