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Добірка наукової літератури з теми "Polycrystalline Oxides - Grain Boundaries"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Polycrystalline Oxides - Grain Boundaries"

1

Carter, C. Barry, and Lisa A. Tietz. "Interfaces in high-Tc superconducting oxides." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 178–79. http://dx.doi.org/10.1017/s0424820100152860.

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Анотація:
Interfaces in high-Tc superconducting oxides are influential during both the processing of bulk materials and the growth of thin epitactically aligned layers. In the first case, the formation of the superconducting phase involves the movement of phase boundaries during the solid-state reaction, while in the second, the phase boundary is formed as the superconducting material grows on the single-crystal substrate. Having formed the superconducting material, the superconducting phase will, in general, contain a large number of grain boundaries varying from the simple twin boundaries which can be produced during the cubic-to-tetragonal transformation, to low-angle grain boundaries, special high-angle grain boundaries, other high-angle grain boundaries and phase boundaries due to incomplete or on-going solid-state reactions. During the course of this presentation, recent results on these topics will be reviewed, paying particular attention to the more widely studied material, YBa2Cu3O6+x.The importance of grain boundaries in high-Tc superconducting oxides has been firmly established by the systematic analysis of Dimos et al who have shown that the misorientation of the grains in layers of YBa2Cu3O6+x which had been grown on polycrystalline SrTiO3 substrate varies with the relative misorientation between the grains.
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2

Yoshida, Hidehiro, Koji Morita, Byung Nam Kim, Keijiro Hiraga, Takahisa Yamamoto, Yuichi Ikuhara, and Taketo Sakuma. "High Temperature Plastic Flow and Ductility in Polycrystalline Oxide Ceramics: Doping Effect and Related Phenomena." Advances in Science and Technology 45 (October 2006): 1620–25. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1620.

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High temperature creep and superplastic flow in high-purity oxide ceramics such as alumina and tetragonal zirconia polycrystals is very sensitive to a small amount of doping by various oxides. High-resolution transmission electron microscopy and an energy-dispersive X-ray spectroscopy analysis revealed that grain boundaries in high-purity oxide ceramics are free from amorphous phase, and that the doped cations tend to segregate along the grain boundaries. Since the high temperature plastic flow in oxide ceramics takes place mainly by grain boundary matter transport by atomic diffusion, the grain boundary nano-structure control must be a useful way to develop new high-performance functional ceramics in the near future.
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3

Nguyen, Viet Huong, Ulrich Gottlieb, Anthony Valla, Delfina Muñoz, Daniel Bellet, and David Muñoz-Rojas. "Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films." Materials Horizons 5, no. 4 (2018): 715–26. http://dx.doi.org/10.1039/c8mh00402a.

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4

OSHIO, T., Y. SAKAI, and S. EHARA. "STM STUDY OF POLYCRYSTALLINE COPPER." Modern Physics Letters B 04, no. 22 (December 1990): 1411–14. http://dx.doi.org/10.1142/s021798499000177x.

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Grain boundaries and their electric potential were studied in connection with the electric conduction in polycrystalline copper using a scanning tunneling microscope (STM). It was found that the grain boundaries consist mainly of cuprous oxide ( Cu 2 O ) and electric potential barriers are formed at most grain boundaries.
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5

Moriyama, Takumi, Sohta Hida, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, and Kentaro Kinoshita. "Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film." MRS Advances 2, no. 4 (2017): 229–34. http://dx.doi.org/10.1557/adv.2017.7.

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ABSTRACTPractical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in polycrystalline metal oxide films. Based on experimental and theoretical results of NiO based ReRAM, we have proposed a grain surface tiling model, in which grain surfaces (i.e. grain boundaries) are composed by insulating and conductive micro surface structures. This paper reports the adequacy of our model to the NiO based ReRAM and universality of surface electronic properties in metal oxides of NiO, CoO and MgO. Experimental results of RS operating modes suggest that the resistance changes in the grain boundaries, supporting our model. First-principles calculation results suggest that our model can be adopted to other metal oxide materials and the RS from a low resistance to a high resistance can be caused at 1000 K, which agrees with previous experimental reports.
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6

Welsh, Shery L., Monica Kapoor, Olivia D. Underwood, Richard L. Martens, Gregory B. Thompson, and Jeffrey L. Evans. "Influence of Grain Boundary Character and Annealing Time on Segregation in Commercially Pure Nickel." Journal of Materials 2016 (February 16, 2016): 1–15. http://dx.doi.org/10.1155/2016/4597271.

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Commercially pure nickel (Ni) was thermomechanically processed to promote an increase in Σ3 special grain boundaries. Engineering the character and chemistry of Σ3 grain boundaries in polycrystalline materials can help in improving physical, chemical, and mechanical properties leading to improved performance. Type-specific grain boundaries (special and random) were characterized using electron backscatter diffraction and the segregation behavior of elements such as Si, Al, C, O, P, Cr, Mg, Mn, B, and Fe, at the atomic level, was studied as a function of grain boundary character using atom probe tomography. These results showed that the random grain boundaries were enriched with impurities to include metal oxides, while Σ3 special grain boundaries showed little to no impurities at the grain boundaries. In addition, the influence of annealing time on the concentration of segregants on random grain boundaries was analyzed and showed clear evidence of increased concentration of segregants as annealing time was increased.
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7

Vahidi, Hasti, Komal Syed, Huiming Guo, Xin Wang, Jenna Laurice Wardini, Jenny Martinez, and William John Bowman. "A Review of Grain Boundary and Heterointerface Characterization in Polycrystalline Oxides by (Scanning) Transmission Electron Microscopy." Crystals 11, no. 8 (July 28, 2021): 878. http://dx.doi.org/10.3390/cryst11080878.

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Interfaces such as grain boundaries (GBs) and heterointerfaces (HIs) are known to play a crucial role in structure-property relationships of polycrystalline materials. While several methods have been used to characterize such interfaces, advanced transmission electron microscopy (TEM) and scanning TEM (STEM) techniques have proven to be uniquely powerful tools, enabling quantification of atomic structure, electronic structure, chemistry, order/disorder, and point defect distributions below the atomic scale. This review focuses on recent progress in characterization of polycrystalline oxide interfaces using S/TEM techniques including imaging, analytical spectroscopies such as energy dispersive X-ray spectroscopy (EDXS) and electron energy-loss spectroscopy (EELS) and scanning diffraction methods such as precession electron nano diffraction (PEND) and 4D-STEM. First, a brief introduction to interfaces, GBs, HIs, and relevant techniques is given. Then, experimental studies which directly correlate GB/HI S/TEM characterization with measured properties of polycrystalline oxides are presented to both strengthen our understanding of these interfaces, and to demonstrate the instrumental capabilities available in the S/TEM. Finally, existing challenges and future development opportunities are discussed. In summary, this article is prepared as a guide for scientists and engineers interested in learning about, and/or using advanced S/TEM techniques to characterize interfaces in polycrystalline materials, particularly ceramic oxides.
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8

Cho, Yong S., David T. Hoelzer, Vernon L. Burdick, and Vasantha R. W. Amarakoon. "Grain boundaries and growth kinetics of polycrystalline ferrimagnetic oxides with chemical additives." Journal of Applied Physics 85, no. 8 (April 15, 1999): 5220–22. http://dx.doi.org/10.1063/1.369949.

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9

Zaborac, J. A., J. P. Buban, H. O. Moltaji, S. Stemmer та N. D. Browning. "Cation Coordination At Σ Grain Boundaries in TiO2 and SrTiO3, and its Effect on the Local Electronic Properties". Microscopy and Microanalysis 5, S2 (серпень 1999): 792–93. http://dx.doi.org/10.1017/s1431927600017281.

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Grain boundaries have long been known to have a dominant effect on the electronic properties of polycrystalline materials. In the case of electroceramic oxides, the thermodynamics of defect formation (vacancies or interstitials, cations or anions) are usually invoked to predict the presence of a space charge potential at the grain boundaries. The relative energetics for the formation of each type of defect determines the size and sign of this potential barrier and thus, the effect that boundaries have on the overall electronic properties of the materials. However, a limitation to this continuum thermodynamics approach is that it does not consider the effect of the grain boundary structure.To investigate whether the grain boundary atomic structure can have an effect on the energetics of defect formation and hence the electronic properties, here we examine the structure of Σ5 boundaries in two systems, SrTiO3 (perovskite) and TiO2(rutile).
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Prabhumirashi, Pradyumna L., Kevin D. Johnson, and Vinayak P. Dravid. "Predictive Structure-Property Correlations for SrtiO3 Grain Boundaries." Microscopy and Microanalysis 7, S2 (August 2001): 292–93. http://dx.doi.org/10.1017/s1431927600027537.

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In polycrystalline materials the trapping of charge at interfaces has a decisive influence on the electrical transport properties through the formation of electrostatic potential barriers. This can either be an intrinsic phenomenon or can be related to impurity segregation leading to complex defect centers. This plays a key role in technologically important systems, especially those having electrically active interfaces, e.g.,p-n junctions in semiconductors and grain boundaries in electroceramics.Electroceramic oxides such as ZnO and SrTiO3 are common systems that exhibit the tendency of current control by internal potential barriers. While bulk measurements, either electrical (e.g. P-E, C-V, I-V), or optical (e.g. Raman) have contributed significantly to the understanding of charged interfaces, there are a very few direct observations of electrical activity at a nanometer level. For instance, it has been recognized that space charge and dopant segregation at the grain boundary are inter-related.
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Дисертації з теми "Polycrystalline Oxides - Grain Boundaries"

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Bhatt, Jayesh S., and Marc-Olivier Coppens. "Diffusion at tilt grain boundaries in polycrystalline porous materials." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-198033.

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2

Bhatt, Jayesh S., and Marc-Olivier Coppens. "Diffusion at tilt grain boundaries in polycrystalline porous materials." Diffusion fundamentals 24 (2015) 6, S. 1, 2015. https://ul.qucosa.de/id/qucosa%3A14520.

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3

Ayres, J. R. A. "Electrically active defects associated with dislocations and grain boundaries in silicon." Thesis, University of Sussex, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307235.

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4

Ritherdon, Justin. "Surface segregation and its influence on the oxidation of polycrystalline nickel." Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318238.

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5

Sarrazit, Franck. "Structure of grain boundaries in hexagonal materials." Thesis, University of Liverpool, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367291.

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6

Chen, Hon-Wen James. "Crystal orientation of polycrystalline diamond tip array /." [St. Lucia, Qld.], 2004. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17687.pdf.

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7

Zhao, Jingyi Zhao. "Relating Grain Boundaries to the Mechanical Properties of Polycrystalline Material: Gradient Nanocrystalline Material and Electro-Plasticity." University of Akron / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=akron153296020243128.

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8

Gonzalez, David. "A contribution on modelling deformation and residual stress in 3D polycrystals." Thesis, University of Manchester, 2013. https://www.research.manchester.ac.uk/portal/en/theses/a-contribution-on-modelling-deformation-and-residual-stress-in-3d-polycrystals(dad0c6be-0494-46e6-8dc8-d3a968212401).html.

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Polycrystalline materials are widely used for industrial applications. These materials are highly anisotropic with different responses under different loading conditions. This dissertation uses a crystal plasticity scheme in the finite element framework (CPFEM) to study deformation mechanisms in alumina, aluminium and stainless steel – all polycrystalline. Four research cases in this dissertation have been presented in the form of manuscripts for publication. When possible, modelling predictions have been compared against various experimental techniques such as Diffraction Contrast Tomography (DCT), Neutron Diffraction (ND) and Electron Back Scatter Diffraction (EBSD). After an introduction (Chapter 1) and a literature review (Chapter 2) on plastic deformation and modelling techniques, the methodology and results are presented and discussed (Chapters 3 and 4). Measurements of elastic strains for individual grain families (ND) and local rotations (DCT and EBSD) are compared against corresponding predictions by the model following different loading modes. Each study reveals different degrees of agreement between predictions and measurements. The individual conclusions to each study are presented in Chapter 4. Some overall conclusions and suggestions for further work are presented in Chapter 5.
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9

Nicoletti, Sergio. "Elaboration et caractérisation de jonctions Josephson YBaCuO sur joints de grains artificiels." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10091.

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Cette these presente une etude de realisation et de caracterisation de jonctions josephson fabriquees a partir de joints de grains artificiels induits dans le film d'ybco. Deux procedes differents ont ete etudies: la fabrication du joint de grains par bi-epitaxie et le depot d'une couche supraconductrice sur substrat bi-cristallin. Le but du travail a ete de developper un procede de fabrication reproductible et d'etudier les proprietes des dispositifs obtenus. Les couches minces ont ete fabriquees par ablation laser pulse. Les dispositifs ont ete obtenus en gravant des lignes de differentes largeurs traversant le joint. Pour les echantillons realises par bi-epitaxie nous avons obtenus a travers un empilement de couches tampons adapte, le joint de grains dans l'ybco sur substrat de saphir ainsi que sur srtio3. Les mesures electriques ont mis en evidence que, pour ce type de joint, le courant josephson est trop faible et que la distribution de courant dans la jonction est inhomogene. Les limitations principales de cette technique sont liees aux contraintes imposes par l'angle de desorientation et par les defauts de fabrication. Pour les jonctions fabriquees sur bi-cristaux, les mesures en champ magnetique ont montre qu'un controle soigne de l'etat de la surface est necessaire pour avoir une barriere homogene. Ce resultat permet le controle de la jonction en regime flux flow. Les resultats preliminaires obtenus sur les transistors a flux de vortex josephson ont mis en evidence que ce type de dispositifs peut etre comme element amplificateur dans un circuit electronique supraconducteur
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10

Berenov, Andrey Valdimirovich. "Cation deficiency in lanthanum manganites." Thesis, Imperial College London, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322303.

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Книги з теми "Polycrystalline Oxides - Grain Boundaries"

1

Möller, Hans J. Polycrystalline Semiconductors: Grain Boundaries and Interfaces. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989.

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2

International Conference on Grain Growth in Polycrystalline Materials (2nd 1995 Kitakyushu, Japan). Grain growth in polycrystalline materials II: Proceedings of the 2nd International Conference on Grain Growth in Polycrystalline Materials, held in Kitakyushu, Japan, 17-20 May, 1995. Edited by Yoshinaga Hideo 1931-, Watanabe T, and Takahashi N. Zürich, Switzerland: Transtec Publications, 1996.

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3

International Conference on Grain Growth in Polycrystalline Materials (1st 1991 Rome, Italy). Grain growth in polycrystalline materials: Proceedings of the 1st International Conference on Grain Growth in Polycrystalline Materials, held in Rome, Italy, 18-21 June 19[91]. Zürich, Switzerland: Trans Tech Publications, 1992.

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4

Novikov, V. I͡U. Grain growth and control of microstructure and texture in polycrystalline materials. Boca Raton: CRC Press, 1997.

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5

1946-, Möller H. J., Strunk H. P. 1940-, and Werner J. H. 1952-, eds. Polycrystalline semiconductors: Grain boundaries and interfaces : proceedings of the international symposium, Malente, Fed. Rep. of Germany, August 29-September, 2, 1988. Berlin: Springer-Verlag, 1989.

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6

United States. National Aeronautics and Space Administration., ed. Sulfur impurities and the microstructure of alumina scales. [Washington, DC]: National Aeronautics and Space Administration, 1997.

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7

Polycrystalline semiconductors: grain boundaries and interfaces. Berlin a.o.: Springer-Verlag, 1989.

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8

Möller, Hans J., Horst P. Strunk, and Juergen Werner. Polycrystalline Semiconductors: Grain Boundaries and Interfaces. Springer, 2014.

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9

Moller, H. J., and H. P. Strunk. Polycrystalline Semiconductors: Grain Boundaries and Interfaces (Springer Proceedings in Physics). Springer, 1989.

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10

(Editor), H. Yoshinaga, T. Watanabe (Editor), and N. Takahashi (Editor), eds. Grain Growth in Polycrystalline Materials II: Icgg-II (Materials Science Forum , Vol 204-206). Trans Tech Publications, 1996.

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Частини книг з теми "Polycrystalline Oxides - Grain Boundaries"

1

Hollricher, O., M. Kolbe, H. Gottschalk, and H. Alexander. "EBIC Investigations of Grain Boundaries n Polycrystalline Silicon." In Springer Proceedings in Physics, 89–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_13.

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2

Häßler, Ch, G. Pensl, and M. Schulz. "Hydrogen-Passivation of Grain Boundaries in Polycrystalline Silicon." In Springer Proceedings in Physics, 259–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_37.

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3

Kalya, Shubhakar, Sean Joseph O'Shea, and Kin Leong Pey. "Characterization of Grain Boundaries in Polycrystalline HfO2 Dielectrics." In Conductive Atomic Force Microscopy, 119–31. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527699773.ch5.

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4

Browning, N. D., R. F. Klie, and Y. Lei. "Vacancy Segregation at Grain Boundaries in Ceramic Oxides." In Mixed Ionic Electronic Conducting Perovskites for Advanced Energy Systems, 15–25. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2349-1_2.

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5

Raza, B., and D. B. Holt. "EBIC Contrast of Grain Boundaries in Polycrystalline Silicon Solar Cells." In Springer Proceedings in Physics, 72–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_10.

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Kazmerski, L. L. "Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors." In Springer Proceedings in Physics, 96–107. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_13.

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7

Zheng, Lei, Q. Deng, and Ting Dong Xu. "The Evaluation of Elastic Modulus at Grain Boundaries for Polycrystalline Materials." In Materials Science Forum, 3847–50. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.3847.

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8

Škipina, B., T. Čajkovski, M. Davidović, D. Čajkovski, V. Likar-Smiljanić, and U. B. Mioč. "Conductivity of Grains and Grain Boundaries in Polycrystalline Heteropoly Acid Salts." In Materials Science Forum, 101–6. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-971-7.101.

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Abelard, P., and J. F. Baumard. "The Electrical Properties of Grain and Grain Boundaries in Y-Doped Fluorite Type Oxides." In Zirconia’88, 1–12. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-1139-0_1.

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10

Lin, Feng Xiang, Andrew Godfrey, and Qing Liu. "Grain Orientation Dependence of Extended Planar Dislocation Boundaries in Cold-Rolled Polycrystalline Aluminium." In Key Engineering Materials, 711–14. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-456-1.711.

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Тези доповідей конференцій з теми "Polycrystalline Oxides - Grain Boundaries"

1

Igarashi, Takahiro, Yoshiteru Aoyagi, and Yoshiyuki Kaji. "Multiphysics Modeling and Simulation for Stress Corrosion Cracking Considering Oxygen Atom Diffusion Along Grain Boundary." In 18th International Conference on Nuclear Engineering. ASMEDC, 2010. http://dx.doi.org/10.1115/icone18-29337.

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Анотація:
Aged degradations of structural materials of boiling water reactors by stress corrosion cracking (SCC) have been frequently reported. SCC is the results of the synergistic interaction of mechanical stress and corrosive environment, and the investigation of this phenomenon has been an important issue. Although many kinds of studies for SCC have been carried out, we have not clarified the fundamental mechanisms of SCC initiation and propagation yet. In the recent experimental studies, nano-scale observation around crack tips using transmission electron microscopy have shown three characteristics of SCC of nuclear structural materials as follows; the size of crack tip is nanometer order, the opening crack is filled with the oxides, and oxygen atoms exist in the grain boundary beyond the crack tips. The second and third ones show that the corrosive environment is mainly influenced on the SCC propagation behavior. Furthermore, electron back scatter diffraction pattern analyses have shown that about 10–20% of plastic strain exists around the crack tips and crack sides. The existence of oxygen atoms along grain boundaries and plastic strains around grain boundaries could be related to the crack propagation mechanism of SCC. In this study, in order to observe the influence of oxygen atoms on the SCC propagation behavior, the two-dimensional SCC propagation model considering diffusion of oxygen atoms along grain boundaries is developed. In this model, the stress distribution of polycrystalline system is obtained by the crystal plasticity theory, and the concentration of oxygen atoms depending on stress localization around cracks is calculated using the diffusion equation of oxygen atoms considering the stress gradient. The density distribution of oxygen atoms is adopted for the threshold of the crack propagation. Relation between the threshold of crack propagation as a viewpoint of density of oxygen atoms along grain boundaries and the geometry of SCC is discussed in this paper.
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2

Jiang, C. S., H. R. Moutinho, F. Liu, M. J. Romero, and M. M. Al-Jassim. "Carrier depletion and grain misorientations on individual grain boundaries of polycrystalline Si thin films." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411640.

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3

Murata, Naokazu, Ken Suzuki, and Hideo Miura. "Quantitative Evaluation of the Crystallinity of Grain Boundaries in Polycrystalline Materials." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87426.

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The effect of the crystllinity of electroplated copper thin films on their mechanical and electrical reliability was investigated experimentally. The crystallinity of grains and grain boundaries was evaluated by IQ (Image Quality) value of EBSD (Electron Back-Scattering Diffraction) analysis. Mechanical properties of thin electroplated films were measured by tensile test. The crystallinity of the thin film was improved by annealing. Therefore, yield stress decrease and fracture strain increase with increase of annealing temperature. Thin film interconnections for measurement of electrical properties were prepared based on damascene process. The crystallinity of the interconnection without annealing was low. The crystallinity of interconnection was improved by annealing at 400°C for 30minutes. Though the EM (Electro-Migration) resistance of the annealed film was improved drastically, SM (Stress-induced Migration) was activated even though interconnection was kept at room temperature without any application of electrical current after annealing. This is because high residual stress was caused by shrinkage of electroplated copper due to change of crystallinity. Thus the control of the crystallinity of the electroplated film was very important to improve the reliability of the interconnection.
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4

Kumari, Khushboo, and Sushobhan Avasthi. "Grain boundaries in Thin-Film Polycrystalline GaAs Solar Cells: A Simulation Study." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366277.

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5

Suchikova, Yana, Andriy Lazarenko, Ihor Bohdanov, Abay Usseinov, Zhakyp Karipbaev, and Anatoli I. Popov. "The Mechanism of the Formation of Grain Boundaries Nanopores in Polycrystalline Materials." In 2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET). IEEE, 2022. http://dx.doi.org/10.1109/tcset55632.2022.9766882.

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6

Suzuki, Ken, Yiqing Fan, and Yifan Luo. "Crystallinity Dependence of Grain and Grain Boundary Strength of a Bicrystal Structure of Copper." In ASME 2020 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/imece2020-23757.

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Abstract Electroplated copper thin films often contain porous grain boundaries and the volume ratio of porous grain boundaries in the copper thin films is much larger than that in bulk copper. Thus, the lifetime of the interconnection components fabricated by electroplating is strongly dominated by the strength of grain boundaries because final fracture caused by the acceleration of atomic diffusion during electromigration (EM) occurs at grain boundaries in polycrystalline interconnections. It is important, therefore, to quantitatively evaluate the grain boundary strength of electroplated copper films for estimating the lifetime of the interconnection in order to assure the product reliability. In this study, relationship between the strength and crystallinity of electroplated copper thin films was investigated experimentally and theoretically. In order to investigate the relationship between the strength and grain boundary quality, molecular dynamics (MD) simulations were applied to analyze the deformation behavior of a bicrystal sample and its strength. The variation of the strength and deformation property were attributed to the higher defect density around grain boundaries.
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7

Cizelj, L., and I. Simonovski. "Multiscale Assessment of Random Polycrystalline Aggregates With Short Cracks." In 14th International Conference on Nuclear Engineering. ASMEDC, 2006. http://dx.doi.org/10.1115/icone14-89623.

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The complete understanding of the incubation and growth of microstructurally short cracks is still somewhat beyond the present state-of-the-art explanations. A good example is the intergranular stress corrosion cracking of Inconel 600 in high-temperature water. An effort was therefore made by the authors to construct a computational model of the crack growth kinetics at the grain-size scale. The main idea is to divide continuum (e.g., polycrystalline aggregate) into a set of sub-continua (grains). Random grain structure is modelled using Voronoi-Dirichlet tessellation. Each grain is assumed to be a monocrystal with random orientation of the crystal lattice. Elastic behaviour of grains is assumed to be anisotropic. Crystal plasticity is used to describe (small to moderate) plastic deformation of monocrystal grains. Explicit geometrical modelling of grain boundaries and triple points allows for the development of the incompatible strains along the grain boundaries and at triple points. Finite element method (ABAQUS) is used to obtain numerical solutions of strain and stress fields. The analysis is currently limited to two-dimensional models. Numerical examples illustrate analysis of about one grain boundary long transgranular cracks. In particular, the dependence of crack tip displacements on the random orientation of neighbouring grains is studied. The limited number of calculations performed indicates that the incompatibility strains, which develop along the boundaries of randomly oriented grains, significantly influence the local stress fields and therefore also the crack tip displacements. First attempts are also made to quantify the preferential growth directions of cracks crossing the discontinuities (e.g., grain boundary).
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8

Zhang, Qing-Guang, Bing-Yang Cao, Xing Zhang, Koji Takahashi, Motoo Fujii, and Ling-Yun Zhu. "Matthienssen’s Rule in Polycrystalline Metallic Nanofilms." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21092.

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Matthiessen’s rule has been applied to analyze the simultaneously measured electrical and thermal conductivities of polycrystalline platinum nanofilms. The results show that the greatly reduced conductivities are mainly attributed to the grain boundary scatterings. By taking into account the background scattering and the grain boundary scattering, Mathienssen’s rule slightly underestimates the thermal conductivity, but obviously overestimates the electrical conductivity. By introducing an additional parameter characterizing electron scattering on the grain boundary in Matthiessen’s rule, the agreement between the theoretical predictions and the observed results are greatly improved. Further studies show that when the mean grain size is much smaller than the corresponding mean free path, the electrons’ behavior inside the grains becomes affected by the grain boundaries and the underlying assumption of independent scattering processes for Mathiessen’s rule will become invalid.
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9

Baba, Masakazu, Kosuke O. Hara, Kentaro Watanabe, Weijie Du, Daichi Tsukahara, Kaoru Toko, Karolin Jiptner, Takashi Sekiguchi, Noritaka Usami, and Takashi Suemasu. "Grain boundaries characterization of semiconducting BaSi2 thin films on a polycrystalline Si substrate." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925584.

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10

Messé, O., and C. Rae. "Dislocations Nucleation and Interaction with Grain Boundaries in a Polycrystalline Nickel Base Superalloy." In Superalloys 2016. The Minerals, Metals & Materials Society, 2016. http://dx.doi.org/10.7449/superalloys/2016/superalloys_2016_831_840.

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Звіти організацій з теми "Polycrystalline Oxides - Grain Boundaries"

1

Chiang, Yet-Ming. Grain boundaries in complex oxides. Office of Scientific and Technical Information (OSTI), May 1993. http://dx.doi.org/10.2172/6856279.

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2

Chiang, Yet-Ming. Grain boundaries in complex oxides. Technical progress report. Office of Scientific and Technical Information (OSTI), May 1993. http://dx.doi.org/10.2172/10150061.

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