Готові списки джерел за темами / Polycrystalline Oxides

Добірка наукової літератури з теми "Polycrystalline Oxides"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Polycrystalline Oxides"

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Mukhin, N. V., K. G. Elanskaia, V. M. Pukhova, S. A. Tarasov, K. A. Vorotilov, M. V. Rudenko, and A. V. Ermachikhin. "Formation Mechanisms for Hetero-Phase Ferroelectric Films of Lead Zirconate Titanate." Journal of the Russian Universities. Radioelectronics, no. 2 (June 5, 2018): 26–36. http://dx.doi.org/10.32603/1993-8985-2018-21-2-26-36.

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An experimental and theoretical study of the formation processes of "impurity" phase inclusions in ferroelectric oxides is carried out via example of polycrystalline lead zirconate-titanate (PZT) films. A feature of these compositions is relatively high volatility of lead oxides, which can lead to deficiency of these components in the composition of the ferroelectric film formed during high-temperature crystallization. To avoid lead losses, some excess is added to the solution in the process of synthesis. Experimental samples of PZT films are obtained using sol-gel method with different contents of lead oxide, the crystallization of the ferroelectric phase of the films is carried out in air at 600 °C. In the films, the inclusions of lead oxide impurity phase are found, and the size distribution of these inclusions are obtained. Model concepts are presented and a system of equations is proposed describing the dispersed inclusions formation kinetics of new phases of different stoichiometric composition at the interfaces in polycrystalline films of multicomponent ferroelectric oxides due to bulk diffusion and grain-boundary segregation. Comparison of the experimental data with the theoretical model gives qualitative agreement. The approach generality makes it possible to extend the model to other systems of multicomponent ferroelectric polycrystalline materials.
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2

Pezzotti, Giuseppe. "Internal friction of polycrystalline ceramic oxides." Physical Review B 60, no. 6 (August 1, 1999): 4018–29. http://dx.doi.org/10.1103/physrevb.60.4018.

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3

Vahidi, Hasti, Komal Syed, Huiming Guo, Xin Wang, Jenna Laurice Wardini, Jenny Martinez, and William John Bowman. "A Review of Grain Boundary and Heterointerface Characterization in Polycrystalline Oxides by (Scanning) Transmission Electron Microscopy." Crystals 11, no. 8 (July 28, 2021): 878. http://dx.doi.org/10.3390/cryst11080878.

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Interfaces such as grain boundaries (GBs) and heterointerfaces (HIs) are known to play a crucial role in structure-property relationships of polycrystalline materials. While several methods have been used to characterize such interfaces, advanced transmission electron microscopy (TEM) and scanning TEM (STEM) techniques have proven to be uniquely powerful tools, enabling quantification of atomic structure, electronic structure, chemistry, order/disorder, and point defect distributions below the atomic scale. This review focuses on recent progress in characterization of polycrystalline oxide interfaces using S/TEM techniques including imaging, analytical spectroscopies such as energy dispersive X-ray spectroscopy (EDXS) and electron energy-loss spectroscopy (EELS) and scanning diffraction methods such as precession electron nano diffraction (PEND) and 4D-STEM. First, a brief introduction to interfaces, GBs, HIs, and relevant techniques is given. Then, experimental studies which directly correlate GB/HI S/TEM characterization with measured properties of polycrystalline oxides are presented to both strengthen our understanding of these interfaces, and to demonstrate the instrumental capabilities available in the S/TEM. Finally, existing challenges and future development opportunities are discussed. In summary, this article is prepared as a guide for scientists and engineers interested in learning about, and/or using advanced S/TEM techniques to characterize interfaces in polycrystalline materials, particularly ceramic oxides.
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4

Shang, H. M., Ying Wang, and Guo Zhong Cao. "Growth of Oxide Nanorod, Nanotube and Nanocable Arrays through Template-Based Sol Electrophoretic Deposition." Key Engineering Materials 336-338 (April 2007): 2122–27. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.2122.

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This paper introduces a process for the growth of oxide nanorod, nanotube, and nanocable arrays that combines sol preparation and template-based electrophoretic deposition. Examples are shown that the sol electrophoretic deposition is an effective method for the formation of polycrystalline and single crystal oxide nanorod arrays, nanotube arrays and conformal coating of thin films of oxides on metal nanorods to produce metal-oxide core-shell nanocable arrays.
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5

Afonin, N. N., and V. A. Logacheva. "Modeling of the reaction interdiffusion in the polycrystalline systems with limited component solubility." Industrial laboratory. Diagnostics of materials 85, no. 9 (September 28, 2019): 35–41. http://dx.doi.org/10.26896/1028-6861-2019-85-9-35-41.

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Анотація:
that may be accompanied by the processes of mutual diffusion and phase formation. Controlled technological process of forming coatings with the given properties entails the necessity of forecasting the evolution of the phase composition. This in turn requires the development of algorithms and quantitative models of the processes. Reactive mutual diffusion in polycrystalline metal (oxide film systems with limited component solubility) has not been simulated before. The simulation allows selecting the annealing conditions (time and temperature) necessary for the inclusion and uniform distribution of metal in the oxide lattice. A quantitative model of the interaction in a multi-layer system metal — polycrystalline oxide of the other metal under conditions of limited solubility is developed. The model is based on the concepts of mutual diffusion of the components and the bulk reactions of the formation of complex oxides. The developed model was applied to the analysis of the process of modifying thin films of titanium oxide with transition metals. The model allowed us to perform a numerical analysis of the experimental concentrations of the component distributions in polycrystalline Co - Ti02 and Fe - Ti02 thin-film systems. The individual diffusion coefficients of the studied metals and titanium under conditions of vacuum annealing were determined. The model provides a good description of the basic systematic features of the process: the appearance of titanium in the metal film and deep penetration of Fe and Co into the film of titanium oxide. It also explains the fact that complex oxides are formed not by layer-by-layer growth at the metal-oxide interface, but throughout the entire thickness of Ti02 film. The results of analysis of the processes of interracial interaction in layered systems accompanied by the reaction mutual diffusion can be used to predict the evolution of the phase composition, as well as to control the technological processes of obtaining materials with the desired properties.
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Tsoga, A., D. Sotiropoulou, and P. Nikolopoulos. "Grain Boundary Grooving in Polycrystalline Oxides and Surface Diffusion Coefficient in Polycrystalline Alumina." Materials Science Forum 207-209 (February 1996): 565–68. http://dx.doi.org/10.4028/www.scientific.net/msf.207-209.565.

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Hilson, Gabrielle, Keith R. Hallam, and Peter E. J. Flewitt. "The Measurement of Stresses within Oxides Produced on Austenitic and Ferritic Steels Using Raman Spectroscopy." Materials Science Forum 524-525 (September 2006): 957–62. http://dx.doi.org/10.4028/www.scientific.net/msf.524-525.957.

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Raman spectroscopy has been used by various workers to provide a measure of the stresses within the oxides grown on metal substrates at high temperatures. In this paper, we consider thermally grown oxides produced on a Type 316 austenitic stainless steel and an iron 3% silicon ferritic steel. The oxides were grown in air at temperatures of 950oC and 650oC respectively over a range of times. These oxides have been characterised by producing cross-sections using focused ion beam milling. The variation of the Raman spectra wave number (He, Ne laser; λ = 633nm) for the oxides produced on the polycrystalline austenitic stainless steel and the ferritic steel were measured as a function of oxide thickness. This shift in wave number was a function of stress. For a fixed oxide thickness on the stainless steel substrate the specimen has been subject to a bending force. A back face strain gauge fixed to the metal substrate provided a measure of the applied strain. The peak wave number varied with applied strain. The results are discussed with respect to the potential to characterise the stresses produced in thermally grown oxides and as a tool to monitor applied stress.
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8

Lee, J. C., and C. Hu. "Polarity asymmetry of oxides grown on polycrystalline silicon." IEEE Transactions on Electron Devices 35, no. 7 (July 1988): 1063–70. http://dx.doi.org/10.1109/16.3365.

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Pobol, Igor, Inessa Gontcharova, and Jaroslaw Rajczyk. "Nanostructured Metallic Coatings for Protection of Materials against Mould Attack." Advanced Materials Research 1020 (October 2014): 55–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1020.55.

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To prevent materials from mould damage nanostructured metallic coatings were used. Silver, copper and titanium coatings were deposited on different materials. Deposition of metal from plasma flow, generated by vacuum-arc discharge, forms coating with highly dispersed polycrystalline structure. Average size of metal grains in copper or titanium coatings is ~10-15 nm, in silver coatings it reaches ~ 20-25 nm. Both paper and plastic materials with nanostructured metallic coatings showed high fungitoxicity unlike the same metal plates. The reason of that phenomenon may be that during oxygen chemisorption oxides of metals occur. Metals and their oxides formed coating with a highly polycrystalline structure and their fungi toxicity can vary.
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Nguyen, Viet Huong, Ulrich Gottlieb, Anthony Valla, Delfina Muñoz, Daniel Bellet, and David Muñoz-Rojas. "Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films." Materials Horizons 5, no. 4 (2018): 715–26. http://dx.doi.org/10.1039/c8mh00402a.

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Дисертації з теми "Polycrystalline Oxides"

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Song, Dengyuan Centre for Photovoltaic Engineering UNSW. "Zinc oxide TCOs (Transparent Conductive Oxides) and polycrystalline silicon thin-films for photovoltaic applications." Awarded by:University of New South Wales. Centre for Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/29371.

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Transparent conductive oxides (TCOs) and polycrystalline silicon (poly-Si) thin-films are very promising for application in photovoltaics. It is extremely challenging to develop cheap TCOs and poly-Si films to make photovoltaic devices. The aim of this thesis is to study sputtered aluminum-doped ZnO TCO and poly-Si films by solid-phase crystallization (SPC) for application in low-cost photovoltaics. The investigated aspects have been (i) to develop and characterize sputtered aluminum-doped ZnO (ZnO:Al) films that can be used as a TCO material on crystalline silicon solar cells, (ii) to explore the potential of the developed ZnO:Al films for application in ZnO:Al/c-Si heterojunction solar cells, (iii) to make and characterize poly-Si thin-films on different kinds of glass substrates by SPC using electron-beam evaporated amorphous silicon (a-Si) [referred to as EVA poly-Si material (SPC of evaporated a-Si)], and (iv) to fabricate EVA poly-Si thin-film solar cells on glass and improve the energy conversion efficiency of these cells by post-crystallization treatments. The ZnO:Al work in this thesis is focused on the correlation between film characteristics and deposition parameters, such as rf sputter power (Prf), working gas pressure (Pw), and substrate temperature (Tsub), to get a clear picture of film properties in the optimized conditions for application in photovoltaic devices. Especially the laterally non-uniform film properties resulting from the laterally inhomogeneous erosion of the target material are investigated in detail. The influence of Prf, Pw and Tsub on the structural, electrical, optical and surface morphology properties of ZnO:Al films is discussed. It is found that the lateral variations of the parameters of ZnO:Al films prepared by rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. ZnO:Al/c-Si heterojunction solar cells are fabricated and characterized to demonstrate the feasibility of the fabricated ZnO:Al films for application in heterojunction solar cells. In this application, expensive indium-tin oxide (ITO) is usually used. Under the standard AM1.5G spectrum (100 mW/cm2, 25 ??C), the best fabricated cell shows an open-circuit voltage of 411 mV, a short-circuit current density of 30.0 mA/cm2, a fill factor of 66.7 %, and a conversion efficiency of 8.2 %. This is believed to be the highest stable efficiency ever reported for this type of cell. By means of dark forward current density-voltage-temperature (J-V-T) measurements, it is shown that the dominant current transport mechanism in the ZnO:Al/c-Si solar cells, in the intermediate forward bias voltage region, is trap-assisted multistep tunneling. EVA poly-Si thin-films are prepared on four types of glass substrates (planar and textured glass, both either bare or SiN-coated) based on evaporated Si, which is a cheaper Si deposition method than the existing technologies. The textured glass is realized by the UNSW-developed AIT process (AIT = aluminium-induced texture). The investigation is concentrated on finding optimized process parameters and evaluating film crystallization quality. It is found that EVA poly-Si films have a grain size in the range 0.8-1.5 ??m, and a preferential (111) orientation. UV reflectance and Raman spectroscopy measurements reveal a high crystalline material quality, both at the air-side surface and in the bulk. EVA cells are fabricated in both substrate and superstrate configuration. Special attention is paid to improving the Voc of the solar cells. For this purpose, after the SPC process, the samples receive the two post-crystallization treatments: (i) a rapid thermal anneal (RTA), and (ii) a plasma hydrogenation. It is found that two post-crystallization treatments more than double the 1-Sun Voc of the substrate-type cells. It is demonstrated that RTA improves the structural material quality of the cells. Furthermore, a hydrogenation step is shown to significantly improve the electronic material quality of the cells. Based on the RTA???d and hydrogenated EVA poly-Si material, the first mesa-type EVA cells are fabricated in substrate configuration, by using sputtered Al-doped ZnO as the transparent front contact. The investigation is focused on addressing the correlation between the type of the substrate and cell performance. Optical, electrical and photovoltaic properties of the devices are characterized. It is found that the performance of EVA cells depends on the glass substrate topography. For cells on textured glass, the AIT texture is shown to have a beneficial effect on the optical absorption of EVA films. It is demonstrated that a SiN barrier layer on the AIT-textured glass improves significantly both the crystalline quality of the poly-Si films and the energy conversion efficiency of the resulting solar cells. For cells on planar glass, a SiN film between the planar glass and the poly-Si film has no obvious effect on the cell properties. The investigations in this thesis clearly show that EVA poly-Si films are very promising for poly-Si thin-film solar cells on glass.
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Veitch, Charles D. "The preparation of polycrystalline mixed-metal oxide phases from metal-organic precursors." Thesis, Glasgow Caledonian University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335019.

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Tran, Duc Khanh. "Experimental and numerical study of crack bridging in polycrystalline ceramics at room and elevated temperatures /." Thesis, Connect to this title online; UW restricted, 1999. http://hdl.handle.net/1773/7042.

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Соловйова, Олександра Омелянівна, Александра Емельяновна Соловьева, and Oleksandra Omelianivna Soloviova. "Simulation of the Mechanism of Defect Structure Formation in Polycrystalline Indium Oxide Under Ion Irradiation." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35411.

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The structural changes in polycrystalline indium oxide were studied before and after irradiation of samples, Xe+ ions with energy 140 and 300 keV, X-ray methods. Discovery, that irradiation leads to a change in the chemical composition of the oxide, accompanied by phase transformations. The main structure of the cubic oxide after irradiation contain macro and micro stresses, which depend on the energy irradiation. The increase in the relative integral intensity of radiation reflected from the planes of the cell on depth was observed. The maximum value observed at a depth of 1.5 m from the plane (510). The analyses of reflected the radiation found that the flux of photons remains constant - the atomic nuclei of oxide not change, increases the frequency, decreases the wavelength depend from the energy irradiation. In some directions in reflecting from the planes, the atoms are formed with different electron density, that connect whit presence of defects, which leads to appear of the forced oscillation, which increases the relative integral intensity of the reflected radiation. These processes are damped with increasing depth of the sample. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35411
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Freeman, Craig John. "Use of sol chemistry and fine grained precursors in the production of controlled microstructural polycrystalline continuous oxide fibres." Thesis, University of Wolverhampton, 2005. http://hdl.handle.net/2436/111546.

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6

Al-Ahmadi, Ahmad Aziz. "Fabrication and characterization of ZnO film by spray pyrolysis and ZnO polycrystalline sintered pellets doped with rear earth ions." Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1175017625.

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Saint, Martin Almeida Renato [Verfasser], Kurosch [Akademischer Betreuer] Rezwan, Kurosch [Gutachter] Rezwan, and Dietmar [Gutachter] Koch. "Long-term behavior of polycrystalline oxide fibers at elevated temperatures / Renato Saint Martin Almeida ; Gutachter: Kurosch Rezwan, Dietmar Koch ; Betreuer: Kurosch Rezwan." Bremen : Staats- und Universitätsbibliothek Bremen, 2017. http://d-nb.info/1149219955/34.

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Soloviova, A. E. "Modeling of the Mechanism of Influence of the Defect Structure in a Polycrystalline Scandi-um Oxide on the Properties of the Thermal and Electrical Effects in Vacuum." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35390.

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In the process of studying the mechanisms of influence of structural defects on properties in scandium oxide, the thermal and electrical effects in the temperature range 25 – 1800 C in a vacuum, in the struc-ture was of detected a gradual phase transition of the ordered cubic type C in a disordered type C1 in the temperature range of 400 – 1000 C. Phase transformation is accompanied by the difference of the conduc-tivity type of the charge carriers. Anion conductivity of charges in the structure of scandium oxide exist there is to 400 С, with the energy of conductivity charges 2.46 eV. In scandium oxide in the interval tem-peratures 400 – 1000 C in case there is a mixture of two types of conductivity anion and electronic. In the interval of temperatures 1600 – 1800 C in case there is a change of the chemical composition of the oxide on the content of oxygen. With the help of the mathematical model of calculation of the elements of the structure of the change in the size of the radii of oxygen and anionic vacancies, which coincides with the change of parameters of elementary cells in the transition of the structure of C in C1. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35390
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9

Lee, Hung-Chang, and 李宏昌. "Characterization of Titanium Oxide as Gate Oxides on Polycrystalline Silicon and Amorphous Silicon Thin Film Transistors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/njp27n.

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博士
國立中山大學
電機工程學系研究所
96
The purpose of this study is using titanium dioxide (TiO2) as gate oxide on thin film transistor (TFT) and discussed with their physical, chemical and electrical properties. Amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) are used as substrates. The metal-organic chemical vapor deposition (MOCVD) and the liquid phase deposition (LPD) are used as the TiO2 growth methods. About the LPD growth method, ammonium hexafluoro-titanate ((NH4)2TiF6) and hexafluorotitanic acid (H2TiF6) are used as Ti sources. We are interested in two parts: (1) the growth mechanisms, physics properties, chemical properties and electrical properties of MOS structure; (2) the fabrication processes and electrical properties of devices. In the first part, we discuss the thin films characteristics on a-Si and poly-Si substrates. For the MOCVD growth method, the MOCVD-TiO2 film tends to form the poly structure. Poly structure has a higher dielectric constant, however, higher traps and dangling bonds also exist at the grain boundaries. Thus, poly structure of TiO2 film has a higher leakage current. For the LPD growth method, the film tends to form the amorphous structure. Amorphous structure has lower leakage current but also has lower dielectric constant. The film that grown from the (NH)2TiF6 source is called LPD-TiO2 film. The film that grown from the (NH)2TiF6 source is called LPD-TixSi(1-x)Oy film. Both films are incorporated with OH and F ions during the growth, the OH and F ions can be outgassed during the low temperature annealing process. In addition, appropriate F ions in the film can passivate the traps and dangling bonds. The low temperature treatments in N2 or O2 ambient and post-metallization annealing (PMA) are adopted to improve the film characteristics. On the other hand, the substrate is not a prefect structure (not a single structure). Thus the film may be influenced by substrate during the annealing treatment. In the second part, the electrical properties of TFT devices were discussed under the coplanar structure. There are several differences of the operation principle in TFT and MOSFET. A-Si and poly-Si are the un-doped substrates with many traps in the bulk. The channel should be occurred through the full depletion mode. The full depletion region is the substrate that under the gate electrode. Thus, the key point is kept the suitable thickness. Too thick, the channel can not appear. Too thin, the substrate may be over-etched. For ion implantation, due to the thinner active layer, the ion implantation energy should be lowed. In addition, the activation temperature and activation time should be adjusted suitable. We have fabricated the TFT devices with the MOCVD-TiO2 as gate oxide on poly-Si substrate. From the I-V characteristics, the Kink effect can be observed. However, the Ion/Ioff ratio is still low. We must further study how to increase the Ion/Ioff ratio.
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CHEN, JUN-YUAN, and 陳俊元. "Study of the characteristics of the thermal oxides grown on singlecrystalline and polycrystalline silicon." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/24852166599262742834.

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Книги з теми "Polycrystalline Oxides"

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Center, NASA Glenn Research, ed. High temperature mechanical behavior of polycrystalline alumina from mixed nanometer and micrometer powders. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2001.

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2

Munro, R. G. Elastic moduli data for polycrystalline oxide ceramics. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 2002.

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3

C, Goldsby Jon, and United States. National Aeronautics and Space Administration., eds. Tensile creep behavior of polycrystalline alumina fibers. [Washington, DC]: National Aeronautics and Space Administration, 1993.

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4

C, Goldsby J., and United States. National Aeronautics and Space Administration., eds. Tensile creep behavior of polycrystalline alumina fibers. [Washington, DC]: National Aeronautics and Space Administration, 1993.

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Частини книг з теми "Polycrystalline Oxides"

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Gordon, Ronald S. "Diffusional Creep Phenomena in Polycrystalline Oxides." In Point Defects in Minerals, 132–40. Washington, D. C.: American Geophysical Union, 2013. http://dx.doi.org/10.1029/gm031p0132.

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Nedkov, I. "Magnetic Behaviour of Polycrystalline Magnetite Thin Films with Nano-Sized Crystallites." In Nano-Crystalline and Thin Film Magnetic Oxides, 43–58. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4493-3_3.

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Zhang, Yue Bin, and Sean Li. "Ferromagnetic Homogeneous Polycrystalline Zn1-xCoxO Oxides." In Advances in Science and Technology, 2520–27. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-01-x.2520.

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4

Yue, Xinyan, Rong Tu, Takashi Goto, and Hongqiang Ru. "Effect of Alkaline Earth Oxides on Dielectric Properties of Polycrystalline BaTi2 O5 ), Prepared by ARC Melting." In Ceramic Transactions Series, 485–91. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470640845.ch70.

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Zhang, Yue Bin, Thirumany Sritharan, and Sean Li. "Isolated and Grouped Co Spins in Polycrystalline Zn1-xCoxO Oxides." In Advances in Science and Technology, 27–30. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-08-7.27.

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Jayaraman, N., and Partha Rangaswamy. "Oxide Scale Stresses in Polycrystalline Cu/Cu2O System." In Advances in X-Ray Analysis, 421–32. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5377-9_46.

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Barbier, Françoise, Jean Bernardini, Fernand Moya, and Michel Déchamps. "Grain Boundary Diffusion Artefacts in Polycrystalline Nickel Oxide Grown by High Temperature Oxidation." In Ceramic Microstructures ’86, 549–54. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1933-7_56.

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Yoshida, Hidehiro, Koji Morita, Byung Nam Kim, Keijiro Hiraga, Takahisa Yamamoto, Yuichi Ikuhara, and Taketo Sakuma. "High Temperature Plastic Flow and Ductility in Polycrystalline Oxide Ceramics: Doping Effect and Related Phenomena." In Advances in Science and Technology, 1620–25. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-01-x.1620.

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9

Salaün, A.-C., H. Lhermite, B. Fortin, and O. Bonnaud. "A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions." In Simulation of Semiconductor Devices and Processes, 428–31. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_103.

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10

RHODES, W. H. "Phase Chemistry in the Development of Transparent Polycrystalline Oxides." In Phase Diagrams in Advanced Ceramics, 1–41. Elsevier, 1995. http://dx.doi.org/10.1016/b978-012341834-0/50002-7.

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Тези доповідей конференцій з теми "Polycrystalline Oxides"

1

Klein, Andreas, Christoph Körber, André Wachau, Robert Schafranek, Yvonne Gassenbauer, Frank Säuberlich, and Gutlapalli Venkata Rao. "Surface Properties of Polycrystalline Transparent Conducting Oxides." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1109-b01-06.

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2

Duncan, Donald D., Charles H. Lange, and David J. Fischer. "Imaging performance of crystalline and polycrystalline oxides." In San Dieg - DL Tentative, edited by Paul Klocek. SPIE, 1990. http://dx.doi.org/10.1117/12.22482.

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3

Pierron, O. N., and C. L. Muhlstein. "Fatigue of polycrystalline silicon films with thin surface oxides." In MOEMS-MEMS 2006 Micro and Nanofabrication, edited by Danelle M. Tanner and Rajeshuni Ramesham. SPIE, 2006. http://dx.doi.org/10.1117/12.646468.

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4

EM. VAMVAKAS, V., D. N. KOUVATSOS, and D. DAVAZOGLOU. "POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS HAVING GATE OXIDES DEPOSITED USING TEOS." In Papers Presented at MMN 2000. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810861_0023.

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5

Avadhani, S. S., S. K. Viswanathan, and B. S. V. Gopalam. "Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films." In Madras - DL tentative. SPIE, 1992. http://dx.doi.org/10.1117/12.57034.

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6

Avadhani, S. S., S. K. Viswanathan, and B. S. V. Gopalam. "Growth and XPS depth profiling of thermal oxides on polycrystalline GaAs thin films." In Madras - DL tentative. SPIE, 1992. http://dx.doi.org/10.1117/12.56996.

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7

Munshi, Amit H., Adam H. Danielson, Anna Kindvall, Kurt Barth, and Walajabad Sampath. "Investigation of Sputtered Oxides and p+ Back-contact for Polycrystalline CdTe and CdSeTe Photovoltaics." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548203.

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8

Vasyliev, A. V., and I. A. Melnichuk. "Influence of surface potential pattern formed by destruction of weak links on the remagnetization of polycrystalline HTSC oxides." In 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2012. http://dx.doi.org/10.1109/omee.2012.6464871.

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9

Souche, D., S. Fisson, V. Nguyen Van, G. Vuye, Y. Wang-Leprince, F. Abelès, and J. Rivory. "Relationship between mixed TiO2-SiO2 films and TiO2/SiO2 interfaces. A combination of spectroscopic ellipsometry and photoemission spectroscopy." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.tua.6.

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Анотація:
TiO2-SiO2 mixed oxides are very interesting materials from many points of view: these materials might be of interest as supports for industrial catalysts [1]; they can provide intermediate refractive indices between SiO2 (1.46) and TiO2 (2.4) for optical coatings and are useful in graded-index thin film structures [2]; the addition of SiO2 into TiO2 changes the film structure from polycrystalline to amorphous and decreases optical scatter [3]. In this work, we will emphasize their interest for the characterization of interfaces in TiO2/SiO2 multilayer stacks.
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10

Fonte, Matthew, and Anil Saigal. "Crystallographic Texture of Nitinol and its Effects on Macrophage." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-37109.

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Анотація:
The use of Nitinol for medical purposes was first reported in the late 1960’s. Today Nitinol is commonly used for the manufacture of stents, which are primarily used in peripheral and coronary bypass graft interventions. The application of NiTi in orthopedics is an exciting prospect but one that has yet to be realized. Nitinol’s unique mechanical behavior is derived from the coordinated atomic movements manifesting in phase transformations from cubic austenite to monoclinic martensite. These phase transformations are solid-to-solid phase transformations that occur without diffusion or plasticity, potentially making them reversible. They involve changes in the crystalline structure that can be induced by changes in either temperature or stress. In addition to phase transformations, Nitinol’s mechanical strength is strongly dependent on the alloy composition and the method in which the material is processed, i.e. rolled, drawn, extruded, or forged. The mechanical work, combined with the intermediate heat treatment steps, contribute to modify microstructure, transformation temperatures and mechanical properties. These manufacturing processing steps lead to texturing (crystallographic alignment) of the material. Alignment of the atomic planes from texture in the polycrystalline material have a marked influence on the mechanical response by either limiting or promoting phase transformations and shape recovery strains. Nitinol is an established biomaterial, whose biocompatibility is heavily grounded on the inertness of titanium based oxides that usually dominate the surface exterior. Surfaces that vary significantly in their chemistry, topography and corrosion resistance have different degrees of biocompatibility. As such, a better understanding of the biological response of NiTi’s surfaces with different crystallographic textures in needed. In the present research, a macrophage study is performed whereby 6 plates that are highly textured NiTi with different surface finishes are incubated with cells for approximately 3 days and then tumor necrosis factor (TNF), a pro-inflammatory cytokine production and cellular proliferation are assessed.
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Звіти організацій з теми "Polycrystalline Oxides"

1

Munro, R. G. Elastic moduli data for polycrystalline oxide ceramics. Gaithersburg, MD: National Institute of Standards and Technology, 2002. http://dx.doi.org/10.6028/nist.ir.6853.

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2

Budai, J. D. Advanced Photon Source Activity Report 2002 at Argonne National Laboratory, Argonne, IL, December 2003 - contribution title:"Microdiffraction Study of Epitaxial Growth and Lattice Tilts in Oxide Films on Polycrystalline Metal Substrates". Office of Scientific and Technical Information (OSTI), March 2004. http://dx.doi.org/10.2172/885661.

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