Статті в журналах з теми "Polarization switching barrier"
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Zhang, Yuanhao, Jibo Xu, Yahui Yu, Weijie Zheng, Zhiyu Xu, Lingzhi Lu, Ziyu Wang, Chaojing Lu, and Zheng Wen. "Changeable electroresistance in Pt/Pb(Zr,Ti)O3/(La,Sr)MnO3 tunnel junctions and memristive properties for synaptic plasticity emulation." Applied Physics Letters 120, no. 20 (May 16, 2022): 203501. http://dx.doi.org/10.1063/5.0093112.
Повний текст джерелаYANG, JUN, KAI-MING JIANG, WEN YUAN WU, and YAN CHUN GONG. "MAGNETIC SWITCHING EFFECT IN SPIN FIELD-EFFECT TRANSISTORS." International Journal of Modern Physics B 24, no. 23 (September 20, 2010): 4501–7. http://dx.doi.org/10.1142/s0217979210056190.
Повний текст джерелаDING, HANG-CHEN, SI-QI SHI, WEI-HUA TANG, and CHUN-GANG DUAN. "FERROELECTRIC SWITCHING PATH IN MONODOMAIN RHOMBOHEDRAL BiFeO3 CRYSTAL: A FIRST-PRINCIPLES STUDY." Journal of Advanced Dielectrics 01, no. 02 (April 2011): 179–84. http://dx.doi.org/10.1142/s2010135x11000264.
Повний текст джерелаSun, Yu, Zi-Lin Yuan, Qian-Ze Li, Cai-Xin Zhang, Ke-Qiu Chen, and Li-Ming Tang. "Electrically controlled valley polarization in 2D buckled honeycomb structures." Modern Physics Letters B 35, no. 25 (August 3, 2021): 2150390. http://dx.doi.org/10.1142/s0217984921503905.
Повний текст джерелаZhu, Yong Dan, Cheng Hu, and An You Zuo. "Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure." Advanced Materials Research 1061-1062 (December 2014): 333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.1061-1062.333.
Повний текст джерелаZhang, Qingtian, Zijing Lin, and K. S. Chan. "Spin polarization switching in monolayer graphene through a Rashba multi-barrier structure." Applied Physics Letters 102, no. 14 (April 8, 2013): 142407. http://dx.doi.org/10.1063/1.4801843.
Повний текст джерелаWei, Wei, Guoqing Zhao, XuePeng Zhan, Weiqiang Zhang, Pengpeng Sang, Qianwen Wang, Lu Tai, et al. "Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2." Journal of Applied Physics 131, no. 15 (April 21, 2022): 154101. http://dx.doi.org/10.1063/5.0084660.
Повний текст джерелаHamouda, Wassim, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder, Tevfik Onur Mentes, Andrea Locatelli, and Nick Barrett. "Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy." Applied Physics Letters 120, no. 20 (May 16, 2022): 202902. http://dx.doi.org/10.1063/5.0093125.
Повний текст джерелаChen, Rong, Zilian Qi, Yingfei Xiong, Yicheng Li, Xiaodong Zhang, and Kun Cao. "Interface-mediated ferroelectricity in PMN-PT/PZT flexible bilayer via pulsed laser deposition." Journal of Vacuum Science & Technology A 41, no. 3 (May 2023): 032702. http://dx.doi.org/10.1116/6.0002386.
Повний текст джерелаChen, Feng, Robert Schafranek, André Wachau, Sergey Zhukov, Julia Glaum, Torsten Granzow, Heinz von Seggern, and Andreas Klein. "Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes." Journal of Applied Physics 108, no. 10 (November 15, 2010): 104106. http://dx.doi.org/10.1063/1.3512969.
Повний текст джерелаLiehr, Maximilian, Jubin Hazra, Karsten Beckmann, Vineetha Mukundan, Ioannis Alexandrou, Timothy Yeow, Joseph Race, et al. "Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform." Journal of Vacuum Science & Technology B 41, no. 1 (January 2023): 012805. http://dx.doi.org/10.1116/6.0002097.
Повний текст джерелаLiang, Shiheng, Zhongwei Yu, Xavier Devaux, Anthony Ferri, Weichuan Huang, Huaiwen Yang, Rachel Desfeux, et al. "Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric “Ailing-Channel” in Organic Barrier." ACS Applied Materials & Interfaces 10, no. 36 (August 20, 2018): 30614–22. http://dx.doi.org/10.1021/acsami.8b11437.
Повний текст джерелаAbramov, Alexander, Boris Slautin, Victoria Pryakhina, Vladimir Shur, Andrei Kholkin, and Denis Alikin. "Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite." Sensors 23, no. 1 (January 3, 2023): 526. http://dx.doi.org/10.3390/s23010526.
Повний текст джерелаLiu, Zhijie, Xinyu Wang, Xingyue Ma, Yurong Yang, and Di Wu. "Doping effects on the ferroelectric properties of wurtzite nitrides." Applied Physics Letters 122, no. 12 (March 20, 2023): 122901. http://dx.doi.org/10.1063/5.0145818.
Повний текст джерелаPirro, Michele, Xuanyi Zhao, Bernard Herrera, Pietro Simeoni, and Matteo Rinaldi. "Effect of Substrate-RF on Sub-200 nm Al0.7Sc0.3N Thin Films." Micromachines 13, no. 6 (May 31, 2022): 877. http://dx.doi.org/10.3390/mi13060877.
Повний текст джерелаMüller, Moritz L., Maximilian T. Becker, Nives Strkalj, and Judith L. MacManus-Driscoll. "Schottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films." Applied Physics Letters 121, no. 9 (August 29, 2022): 093501. http://dx.doi.org/10.1063/5.0095762.
Повний текст джерелаKIM, HONG KOO, and NASIR ABDUL BASIT. "FERROELECTRIC NONVOLATILE MEMORY FIELD-EFFECT TRANSISTORS BASED ON A NOVEL BUFFER LAYER STRUCTURE." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 39–46. http://dx.doi.org/10.1142/s0129156400000076.
Повний текст джерелаMokhtarnejad, Mahshid, Morteza Asgari, and Arash Sabatyan. "Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells." International Journal of Optics 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/7280613.
Повний текст джерелаYoo, Jaewook, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo, and Hagyoul Bae. "Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications." Electronics 12, no. 10 (May 19, 2023): 2297. http://dx.doi.org/10.3390/electronics12102297.
Повний текст джерелаSong, Rui, Bi-Li Wang, Kai Feng, Li Wang, and Dan-Dan Liang. "Structural, magnetic and ferroelectric properties of VOBr<sub>2 </sub>monolayer: A first-principles study." Acta Physica Sinica 71, no. 3 (2022): 037101. http://dx.doi.org/10.7498/aps.71.20211516.
Повний текст джерелаShields, Joe, Carlota Ruiz de Galarreta, Jacopo Bertolotti, and C. David Wright. "Enhanced Performance and Diffusion Robustness of Phase-Change Metasurfaces via a Hybrid Dielectric/Plasmonic Approach." Nanomaterials 11, no. 2 (February 18, 2021): 525. http://dx.doi.org/10.3390/nano11020525.
Повний текст джерелаLong, Xiao, Huan Tan, Florencio Sánchez, Ignasi Fina, and Josep Fontcuberta. "Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO3 ferroelectric tunnel junction." Journal of Applied Physics 132, no. 21 (December 7, 2022): 214103. http://dx.doi.org/10.1063/5.0125040.
Повний текст джерелаDiao, Zhitao, Dmytro Apalkov, Mahendra Pakala, Yunfei Ding, Alex Panchula, and Yiming Huai. "Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers." Applied Physics Letters 87, no. 23 (December 5, 2005): 232502. http://dx.doi.org/10.1063/1.2139849.
Повний текст джерелаKhan, Aaliyah C., Autumn S. Cook, Joshua A. Leginze, and Joseph W. Bennett. "Developing new antiferroelectric and ferroelectric oxides and chalcogenides within the A2BX3 family." Journal of Materials Research 37, no. 1 (October 28, 2021): 346–59. http://dx.doi.org/10.1557/s43578-021-00410-3.
Повний текст джерелаRen, Yangyang, Yaxin Gao, Tingting Zhong, Menghao Wu та Jun-Ming Liu. "Proton transfer in layered hydrogen-bonded system γ-MOOH (M = Al, Sc): Robust bi-mode ferroelectricity and 1D superionic conductivity". Applied Physics Letters 122, № 4 (23 січня 2023): 042901. http://dx.doi.org/10.1063/5.0136846.
Повний текст джерелаStoleriu, Laurentiu, Cristina Ciomaga, Fabio Fochi, Pilar Ochoa, José Fernández, Carmen Galassi, Vincenzo Buscaglia, Paolo Nanni, and Liliana Mitoseriu. "Mechanically clamped PZT ceramics investigated by First-Order Reversal Curves diagram." Processing and Application of Ceramics 4, no. 3 (2010): 209–14. http://dx.doi.org/10.2298/pac1003209s.
Повний текст джерелаYu, Qisheng, Jiawei Huang, Changming Ke, Zhuang Qian, Liyang Ma, and Shi Liu. "Semiconducting nonperovskite ferroelectric oxynitride designed ab initio." Applied Physics Letters 122, no. 14 (April 3, 2023): 142902. http://dx.doi.org/10.1063/5.0141987.
Повний текст джерелаYe, Fan, Xin-Gui Tang, Jia-Ying Chen, Wen-Min Zhong, Li Zhang, Yan-Ping Jiang, and Qiu-Xiang Liu. "Neurosynaptic-like behavior of Ce-doped BaTiO3 ferroelectric thin film diodes for visual recognition applications." Applied Physics Letters 121, no. 17 (October 24, 2022): 171901. http://dx.doi.org/10.1063/5.0120159.
Повний текст джерелаAbbasi, Pedram, David P. Fenning, and Tod A. Pascal. "Electrocatalytic Hydrogen Evolution on Ferroelectric Perovskite Heterostructures." ECS Meeting Abstracts MA2022-01, no. 38 (July 7, 2022): 1691. http://dx.doi.org/10.1149/ma2022-01381691mtgabs.
Повний текст джерелаHofstetter, Daniel, Cynthia Aku-Leh, Hans Beck, and David P. Bour. "AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers." Crystals 11, no. 11 (November 22, 2021): 1431. http://dx.doi.org/10.3390/cryst11111431.
Повний текст джерелаXue, Fei, Xin He, Yinchang Ma, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang. "Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions." Nature Communications 12, no. 1 (December 2021). http://dx.doi.org/10.1038/s41467-021-27617-6.
Повний текст джерелаWang, Hao-Chen, Zhi-Hao Wang, Xuan-Yan Chen, Su-Huai Wei, Wenguang Zhu, and Xie Zhang. "Competition between stepwise polarization switching and chirality coupling in ferroelectric GeS nanotubes." Chinese Physics Letters, March 13, 2023. http://dx.doi.org/10.1088/0256-307x/40/4/047701.
Повний текст джерелаWei, Yingfen, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maroutian, Guillaume Agnus, Philippe Lecoeur, and Beatriz Noheda. "Magneto-ionic control of spin polarization in multiferroic tunnel junctions." npj Quantum Materials 4, no. 1 (December 2019). http://dx.doi.org/10.1038/s41535-019-0201-0.
Повний текст джерелаBernacki, Stephen E. "Polarization Dependent Conductivity in Thin Film Pzt Capacitors." MRS Proceedings 243 (1991). http://dx.doi.org/10.1557/proc-243-135.
Повний текст джерелаLee, Kyoungjun, Kunwoo Park, Hyun-Jae Lee, Myeong Seop Song, Kyu Cheol Lee, Jin Namkung, Jun Hee Lee, Jungwon Park, and Seung Chul Chae. "Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency." Scientific Reports 11, no. 1 (March 18, 2021). http://dx.doi.org/10.1038/s41598-021-85773-7.
Повний текст джерелаHuang, Biaohong, Xuefeng Zhao, Xiaoqi Li, Lingli Li, Zhongshuai Xie, Di Wang, Dingshuai Feng, et al. "Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching." ACS Nano, June 26, 2023. http://dx.doi.org/10.1021/acsnano.3c01548.
Повний текст джерелаXia, Feng, and Q. M. Zhang. "Influence of Metal Electrodes on the Ferroelectric Responses of Poly(vinylidene fluoride-trifluoroethylene) Copolymer Thin Films." MRS Proceedings 734 (2002). http://dx.doi.org/10.1557/proc-734-b9.20.
Повний текст джерелаZhu Mao-Cong, Shao Ya-Jie, Zhou Jing, Chen Wen, Wang Zhi-Qing, and Tian Jing. "Niobium-doped lead zirconate titanate ferroelectric films improve the resistive properties of CuInS<sub>2</sub> QDs." Acta Physica Sinica, 2022, 0. http://dx.doi.org/10.7498/aps.71.20220911.
Повний текст джерелаWolf, R. M., J. F. M. Cillessen, J. B. Giesbers, E. Pastoor, G. Miiller, K. O. Grosse-Holz, and P. W. M. Blom. "Oxidic Field Effect Structures with Memory." MRS Proceedings 401 (1995). http://dx.doi.org/10.1557/proc-401-163.
Повний текст джерелаPark, Jaehong, In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi. "Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics." Scientific Reports 9, no. 1 (October 17, 2019). http://dx.doi.org/10.1038/s41598-019-50293-y.
Повний текст джерелаLi, Yue, Xing-peng Liu, Tang-you Sun, Fa-bi Zhang, Tao Fu, Pei-hua Wang-yang, Hai-ou Li, and Yong-he Chen. "Impact of Al x Ga1-x N barrier thickness and Al composition on the electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs." Chinese Physics B, June 22, 2022. http://dx.doi.org/10.1088/1674-1056/ac7b1a.
Повний текст джерелаMehling, V., Ch Tsakmakis, and D. Gross. "Fully Coupled 3-D Modelling of Ferroelectric Polycrystalline Material Behavior." MRS Proceedings 881 (2005). http://dx.doi.org/10.1557/proc-881-cc4.9.
Повний текст джерелаLi, Dong, Pengyu Liu, Ruiman He, Yihang Bai, Chang Liu, Bing Wang, and Guanwei Jia. "Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer." Applied Physics Letters 123, no. 5 (July 31, 2023). http://dx.doi.org/10.1063/5.0155960.
Повний текст джерелаLee, Kwang B., S. Tirumala, Y. Song, Sang O. Ryu, and Seshu B. Desu. "Simple Electrode-Barrier Structure Using Ir for Integration of PZT-Based High-Density Nonvolatile Memories." MRS Proceedings 541 (1998). http://dx.doi.org/10.1557/proc-541-197.
Повний текст джерелаGuo, Fei, Yaping Liu, Rui Liu, Siyuan Guo, Haojie Xu, Yang Li, Bo Yang, and Shifeng Zhao. "The evolution between ferroelectric photovoltaic effect and resistance switching behavior engineered by the polarization field and barrier characteristics." Optics Express, June 22, 2023. http://dx.doi.org/10.1364/oe.493183.
Повний текст джерелаRyu, Hojoon, Haonan Wu, Fubo Rao, and Wenjuan Zhu. "Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing." Scientific Reports 9, no. 1 (December 2019). http://dx.doi.org/10.1038/s41598-019-56816-x.
Повний текст джерелаHu, Yuzhong, Kaushik Parida, Hao Zhang, Xin Wang, Yongxin Li, Xinran Zhou, Samuel Alexander Morris, et al. "Bond engineering of molecular ferroelectrics renders soft and high-performance piezoelectric energy harvesting materials." Nature Communications 13, no. 1 (September 24, 2022). http://dx.doi.org/10.1038/s41467-022-33325-6.
Повний текст джерелаYan, Shuo, Xueli Hu, Xiaomei Lu, Junting Zhang, Xiaofan Shen, and Fengzhen Huang. "Self-organization of ferroelectric domains induced by water and reinforced via ultrasonic vibration." Communications Materials 4, no. 1 (May 26, 2023). http://dx.doi.org/10.1038/s43246-023-00371-6.
Повний текст джерелаRehman, Majeed Ur, та Zhenhua Qiao. "MX family: An efficient platform for topological spintronics based on Rashba and Zeeman-like spin splittings". Journal of Physics: Condensed Matter, 24 жовтня 2022. http://dx.doi.org/10.1088/1361-648x/ac9d15.
Повний текст джерелаLi, Yun-Qin, Xin-Yu Wang, Shi-Yu Zhu, Dai-Song Tang, Qi-Wen He, and Xiao-Chun Wang. "Enhanced vertical polarization and ultra-low polarization switching barriers of two-dimensional SnS/SnSSe ferroelectric heterostructures." Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc02721f.
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