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1

Sun, Feiying, Changbin Nie, Xingzhan Wei, Hu Mao, Yupeng Zhang, and Guo Ping Wang. "All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures." Nanophotonics 10, no. 16 (October 15, 2021): 3957–65. http://dx.doi.org/10.1515/nanoph-2021-0279.

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Анотація:
Abstract Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.
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2

Messner, Andreas, Felix Eltes, Ping Ma, Stefan Abel, Benedikt Baeuerle, Arne Josten, Wolfgang Heni, Daniele Caimi, Jean Fompeyrine, and Juerg Leuthold. "Plasmonic Ferroelectric Modulators." Journal of Lightwave Technology 37, no. 2 (January 15, 2019): 281–90. http://dx.doi.org/10.1109/jlt.2018.2881332.

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3

Yan, Siqi, Xiaolong Zhu, Jianji Dong, Yunhong Ding, and Sanshui Xiao. "2D materials integrated with metallic nanostructures: fundamentals and optoelectronic applications." Nanophotonics 9, no. 7 (April 17, 2020): 1877–900. http://dx.doi.org/10.1515/nanoph-2020-0074.

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Анотація:
AbstractDue to their novel electronic and optical properties, atomically thin layered two-dimensional (2D) materials are becoming promising to realize novel functional optoelectronic devices including photodetectors, modulators, and lasers. However, light–matter interactions in 2D materials are often weak because of the atomic-scale thickness, thus limiting the performances of these devices. Metallic nanostructures supporting surface plasmon polaritons show strong ability to concentrate light within subwavelength region, opening thereby new avenues for strengthening the light–matter interactions and miniaturizing the devices. This review starts to present how to use metallic nanostructures to enhance light–matter interactions in 2D materials, mainly focusing on photoluminescence, Raman scattering, and nonlinearities of 2D materials. In addition, an overview of ultraconfined acoustic-like plasmons in hybrid graphene–metal structures is given, discussing the nonlocal response and quantum mechanical features of the graphene plasmons and metals. Then, the review summarizes the latest development of 2D material–based optoelectronic devices integrated with plasmonic nanostructures. Both off-chip and on-chip devices including modulators and photodetectors are discussed. The potentials of hybrid 2D materials plasmonic optoelectronic devices are finally summarized, giving the future research directions for applications in optical interconnects and optical communications.
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4

Zou, Qiushun, Wenjie Liu, Yang Shen, and Chongjun Jin. "Flexible plasmonic modulators induced by the thermomechanical effect." Nanoscale 11, no. 24 (2019): 11437–44. http://dx.doi.org/10.1039/c9nr04068d.

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Анотація:
In a reconfigurable flexible plasmonic modulator, the gap between the gold nanowires is widen by local expansion of PDMS substrate caused by current-induced local Joule heat, leading to a strength change of plasmon resonance.
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5

Yan, Xiaofei, Qi Lin, Lingling Wang, and Guidong Liu. "Active absorption modulation by employing strong coupling between magnetic plasmons and borophene surface plasmons in the telecommunication band." Journal of Applied Physics 132, no. 6 (August 14, 2022): 063101. http://dx.doi.org/10.1063/5.0100211.

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Анотація:
The tunable and highly confined plasmon in 2D materials paves the way for designing 2D materials capable of manipulating light on a subwavelength scale, making them suitable for the design of optical modulators in ultracompact sizes. Herein, a continuously adjustable modulator in the telecommunication band is theoretically presented by the strong coupling between the magnetic plasmons (MPs) and borophene surface plasmons (BSPs). A remarkable Rabi splitting is observed and the coupling process is theoretically investigated by the model of two coupled oscillators. Results show that the splitting energy is determined by the coupling strength, which can be modulated by adjusting the distance between the borophene monolayer and silver grating. Moreover, by manipulating the electron density of the borophene to drive both two modes coupled or decoupled, the absorption can be continuously adjustable almost from 0 to 1 at 1544 nm, and the maximum modulation depth can be up to 94.8%. This work may provide a method to enhance light–matter interactions by the coupled multi-modes and design borophene-based plasmonic modulator.
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6

Ding, Y., X. Guan, X. Zhu, H. Hu, S. I. Bozhevolnyi, L. K. Oxenløwe, K. J. Jin, N. A. Mortensen, and S. Xiao. "Efficient electro-optic modulation in low-loss graphene-plasmonic slot waveguides." Nanoscale 9, no. 40 (2017): 15576–81. http://dx.doi.org/10.1039/c7nr05994a.

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Анотація:
Surface plasmon polaritons enable light concentration within subwavelength regions, and here we demonstrate efficient and compact graphene-plasmonic modulators fully integrated in the silicon-on-insulator platform.
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7

Babicheva, Viktoriia E., Alexandra Boltasseva, and Andrei V. Lavrinenko. "Transparent conducting oxides for electro-optical plasmonic modulators." Nanophotonics 4, no. 1 (June 16, 2015): 165–85. http://dx.doi.org/10.1515/nanoph-2015-0004.

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Анотація:
Abstract:The ongoing quest for ultra-compact optical devices has reached a bottleneck due to the diffraction limit in conventional photonics. New approaches that provide subwavelength optical elements, and therefore lead to miniaturization of the entire photonic circuit, are urgently required. Plasmonics, which combines nanoscale light confinement and optical-speed processing of signals, has the potential to enable the next generation of hybrid information-processing devices, which are superior to the current photonic dielectric components in terms of speed and compactness. New plasmonic materials (other than metals), or optical materials with metal-like behavior, have recently attracted a lot of attention due to the promise they hold to enable low-loss, tunable, CMOScompatible devices for photonic technologies. In this review, we provide a systematic overview of various compact optical modulator designs that utilize a class of the most promising new materials as the active layer or core— namely, transparent conducting oxides. Such modulators can be made low-loss, compact, and exhibit high tunability while offering low cost and compatibility with existing semiconductor technologies. A detailed analysis of different configurations and their working characteristics, such as their extinction ratio, compactness, bandwidth, and losses, is performed identifying the most promising designs.
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8

Ooi, Kelvin J. A., Ping Bai, Hong Son Chu, and Lay Kee Ang. "Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator." Nanophotonics 2, no. 1 (February 1, 2013): 13–19. http://dx.doi.org/10.1515/nanoph-2012-0028.

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Анотація:
AbstractSubwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO2-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the “on” state and high-loss VO2 layer during the “off” state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10 dB with an active size of only 200×50×220 nm3 (or ~λ3/1700), requiring a drive-voltage of ~4.6 V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology.
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9

Huang, Jinwen, and Zhengyong Song. "Terahertz graphene modulator based on hybrid plasmonic waveguide." Physica Scripta 96, no. 12 (November 19, 2021): 125525. http://dx.doi.org/10.1088/1402-4896/ac387d.

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Анотація:
Abstract As a key component of on-chip interconnection, optical modulator with large modulation depth and tiny footprint has always been studied. Profiting by high carrier mobility and flexible adjustability of graphene, numerous graphene modulators at optical communication band are proposed to overcome inherent flaws of traditional semiconductor waveguide modulators. Here, a terahertz waveguide modulator combing noble metal and graphene is presented. When Fermi level changes from 0 eV to 1 eV, intensity distribution of electric field becomes dispersed. Interaction area of graphene and wave increases, which results in larger propagation loss. On the premise of the existence of the allowed mode, the size of metal and the thickness of dielectric should be small. Besides, modulation capability of this device can also be improved by multilayer graphene with relaxation time of 0.1 ps. After optimizing structure parameters, the designed graphene waveguide modulator obtains modulation depth of 6.1 dB μm−1 at the frequency of 5 THz, and keeps effective mode area below 10−5. With the increase of frequency, modulation depth decreases. Modulation depth of 1.5 dB μm−1 is achieved at 10 THz, but the corresponding effective mode area remains in an ideal range. Because the allowed mode is confined in a tiny room, cross-sectional area of device is less than 4 μm2.
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10

Sweatlock, Luke A., and Kenneth Diest. "Vanadium dioxide based plasmonic modulators." Optics Express 20, no. 8 (March 30, 2012): 8700. http://dx.doi.org/10.1364/oe.20.008700.

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11

Melikyan, A., L. Alloatti, A. Muslija, D. Hillerkuss, P. C. Schindler, J. Li, R. Palmer, et al. "High-speed plasmonic phase modulators." Nature Photonics 8, no. 3 (February 16, 2014): 229–33. http://dx.doi.org/10.1038/nphoton.2014.9.

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12

Dennis, B. S., M. I. Haftel, D. A. Czaplewski, D. Lopez, G. Blumberg, and V. A. Aksyuk. "Compact nanomechanical plasmonic phase modulators." Nature Photonics 9, no. 4 (March 30, 2015): 267–73. http://dx.doi.org/10.1038/nphoton.2015.40.

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13

Li, Yuyu, Khwanchai Tantiwanichapan, Anna K. Swan, and Roberto Paiella. "Graphene plasmonic devices for terahertz optoelectronics." Nanophotonics 9, no. 7 (May 14, 2020): 1901–20. http://dx.doi.org/10.1515/nanoph-2020-0211.

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Анотація:
AbstractPlasmonic excitations, consisting of collective oscillations of the electron gas in a conductive film or nanostructure coupled to electromagnetic fields, play a prominent role in photonics and optoelectronics. While traditional plasmonic systems are based on noble metals, recent work has established graphene as a uniquely suited materials platform for plasmonic science and applications due to several distinctive properties. Graphene plasmonic oscillations exhibit particularly strong sub-wavelength confinement, can be tuned dynamically through the application of a gate voltage, and span a portion of the infrared spectrum (including mid-infrared and terahertz (THz) wavelengths) that is not directly accessible with noble metals. These properties have been studied in extensive theoretical and experimental work over the past decade, and more recently various device applications are also beginning to be explored. This review article is focused on graphene plasmonic nanostructures designed to address a key outstanding challenge of modern-day optoelectronics – the limited availability of practical, high-performance THz devices. Graphene plasmons can be used as a means to enhance light–matter interactions at THz wavelengths in a highly tunable fashion, particularly through the integration of graphene resonant structures with additional nanophotonic elements. This capability is ideally suited to the development of THz optical modulators (where absorption is switched on and off by tuning the plasmonic resonance) and photodetectors (relying on plasmon-enhanced intraband absorption or rectification of charge-density waves), and promising devices based on these principles have already been reported. Novel radiation mechanisms, including light emission from electrically excited graphene plasmons, are also being explored for the development of compact narrowband THz sources.
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14

Ye, Longfang, Kouxiang Yuan, Chunhui Zhu, Yao Zhang, Yong Zhang, and Kunzhong Lai. "Broadband high-efficiency near-infrared graphene phase modulators enabled by metal–nanoribbon integrated hybrid plasmonic waveguides." Nanophotonics 11, no. 3 (December 21, 2021): 613–23. http://dx.doi.org/10.1515/nanoph-2021-0709.

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Анотація:
Abstract The phase modulator is a key component in optical communications for its phase modulation functions. In this paper, we numerically demonstrate a variety of ultra-compact high-efficiency graphene phase modulators (GPMs) based on metal–nanoribbon integrated hybrid plasmonic waveguides in the near-infrared region. Benefiting from the good in-plane mode polarization matching and strong hybrid surface plasmon polariton and graphene interaction, the 20 μm-length GPM can achieve excellent phase modulation performance with a good phase and amplitude decoupling effect, a low insertion loss around 0.3 dB/μm, a high modulation efficiency with V π L π of 118.67 V μm at 1.55 μm, which is 1–3 orders improvement compared to the state-of-the-art graphene modulators. Furthermore, it has a wide modulation bandwidth of 67.96 GHz, a low energy consumption of 157.49 fJ/bit, and a wide operating wavelength ranging from 1.3 to 1.8 μm. By reducing the overlap width of the graphene–Al2O3–graphene capacitor, the modulation bandwidth and energy consumption of the modulator can be further improved to 370.36 GHz and 30.22 fJ/bit, respectively. These compact and energy-efficient GPMs may hold a key to various high-speed telecommunications, interconnects, and other graphene-based integrated photonics applications.
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15

Ching, Suetying, Chakming Chan, Jack Ng, and Kokwai Cheah. "Ag-Yb Alloy-Novel Tunable Plasmonic Material." Photonics 8, no. 7 (July 20, 2021): 288. http://dx.doi.org/10.3390/photonics8070288.

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Metals are commonly used in plasmonic devices because of their strong plasmonic property. However, such properties are not easily tuned. For applications such as spatial light modulators and beam steering, tunable plasmonic properties are essential, and neither metals nor other plasmonic materials possess truly tunable plasmonic properties. In this work, we show that the silver alloy silver–ytterbium (Ag-Yb) possesses tunable plasmonic properties; its plasmonic response strength can be adjusted as a function of Yb concentration. Such tunability can be explained in terms of the influence of Yb on bound charge and interaction of its dielectric with the dielectric of Ag. The change in transition characteristics progressively weakens Ag’s plasmonic properties. With a spectral ellipsometric measurement, it was shown that the Ag-Yb alloy thin film retains the properties of Ag with high transmission efficiency. The weakened surface plasmon coupling strength without dramatic change in the coupling wavelengths implies that the tunability of the Ag-Yb alloy is related to its volume ratio. The principle mechanism of the plasmonic change is theoretically explained using a model. This work points to a potential new type of tunable plasmonic material.
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16

Emboras, Alexandros, Claudia Hoessbacher, Christian Haffner, Wolfgang Heni, Ueli Koch, Ping Ma, Yuriy Fedoryshyn, Jens Niegemann, Christian Hafner, and Jurg Leuthold. "Electrically Controlled Plasmonic Switches and Modulators." IEEE Journal of Selected Topics in Quantum Electronics 21, no. 4 (July 2015): 276–83. http://dx.doi.org/10.1109/jstqe.2014.2382293.

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17

Gosciniak, Jacek. "Ultra-compact nonvolatile plasmonic phase change modulators and switches with dual electrical–optical functionality." AIP Advances 12, no. 3 (March 1, 2022): 035321. http://dx.doi.org/10.1063/5.0082094.

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Анотація:
Programmable photonic integrated circuits (PICs) are the foundation of on-chip optical technologies, with the optical modulators being one of the main building blocks of such programmable PICs. However, most of the available modulators suffer from high power consumption, low response time, and large footprint. Additionally, they show a large resistance modulation; thus, they require high switching voltage. In consequence, they operate much above CMOS-compatible voltages of 1.2 V and with high insertion losses. Furthermore, the state and information they carry are lost once the power is turned off—so, they are volatile. Thus, realizing modulators and phase shifters that overcome all those problems still remains a challenge. To overcome some of those limitations, the nonvolatile phase change materials implemented in the plasmonic structures are proposed that can offer many advantages as result of high electric field interaction with nonvolatile materials. Consequently, novel plasmonic nonvolatile switches proposed here can operate by phase modulation, absorption modulation, or both and under zero-static power. For the first time, the nonvolatile phase modulator is proposed that requires only 230 nm long active waveguide to attain full π phase delay with an insertion loss below even 0.12 dB. Simultaneously, under the requirements, it can operate as an amplitude modulator with an extinction ratio exceeding 2.2 dB/ μm while the insertion losses are kept below 0.185 dB/ μm. Furthermore, the heating mechanism can be based on the external heaters, internal heaters, electrical (memory) switching, or optical switching mechanism, which provide a lot of flexibility in terms of a design and requirements.
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18

Švanda, Jan, Yevgeniya Kalachyova, David Mareš, Jakub Siegel, Petr Slepička, Zdeňka Kolská, Petr Macháč, Štefan Michna, Václav Švorčík, and Oleksiy Lyutakov. "Smart Modulators Based on Electric Field-Triggering of Surface Plasmon–Polariton for Active Plasmonics." Nanomaterials 12, no. 19 (September 27, 2022): 3366. http://dx.doi.org/10.3390/nano12193366.

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Анотація:
Design and properties of a plasmonic modulator in situ tunable by electric field are presented. Our design comprises the creation of periodic surface pattern on the surface of an elastic polymer supported by a piezo–substrate by excimer laser irradiation and subsequent selective coverage by silver by tilted angle vacuum evaporation. The structure creation was confirmed by AFM and FIB-SEM techniques. An external electric field is used for fine control of the polymer pattern amplitude, which tends to decrease with increasing voltage. As a result, surface plasmon–polariton excitation is quenched, leading to the less pronounced structure of plasmon response. This quenching was checked using UV–Vis spectroscopy and SERS measurements, and confirmed by numerical simulation. All methods prove the proposed functionality of the structures enabling the creation smart plasmonic materials for a very broad range of advanced optical applications.
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19

Ren, Yi, Jingjing Zhang, Xinxin Gao, Xin Zheng, Xinyu Liu, and Tie Jun Cui. "Active spoof plasmonics: from design to applications." Journal of Physics: Condensed Matter 34, no. 5 (November 11, 2021): 053002. http://dx.doi.org/10.1088/1361-648x/ac31f7.

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Abstract Spoof plasmonic metamaterials enable the transmission of electromagnetic energies with strong field confinement, opening new pathways to the miniaturization of devices for modern communications. The design of active, reconfigurable, and nonlinear devices for the efficient generation and guidance, dynamic modulation, and accurate detection of spoof surface plasmonic signals has become one of the major research directions in the field of spoof plasmonic metamaterials. In this article, we review recent progress in the studies on spoof surface plasmons with a special focus on the active spoof surface plasmonic devices and systems. Different design schemes are introduced, and the related applications including reconfigurable filters, high-resolution sensors for chemical and biological sensing, graphene-based attenuators, programmable and multi-functional devices, nonlinear devices, splitters, leaky-wave antennas and multi-scheme digital modulators are discussed. The presence of active SSPPs based on different design schemes makes it possible to dynamically control electromagnetic waves in real time. The promising future of active spoof plasmonic metamaterials in the communication systems is also speculated.
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20

Olivieri, Anthony, Chengkun Chen, Sa’ad Hassan, Ewa Lisicka-Skrzek, R. Niall Tait, and Pierre Berini. "Plasmonic Nanostructured Metal–Oxide–Semiconductor Reflection Modulators." Nano Letters 15, no. 4 (March 5, 2015): 2304–11. http://dx.doi.org/10.1021/nl504389f.

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21

Tanyi, Gregory Beti, Miao Sun, Christina Lim, and Ranjith Rajasekharan Unnithan. "Design of an On-Chip Plasmonic Modulator Based on Hybrid Orthogonal Junctions Using Vanadium Dioxide." Nanomaterials 11, no. 10 (September 26, 2021): 2507. http://dx.doi.org/10.3390/nano11102507.

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Анотація:
We present the design of a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on a silicon-on-insulator. The modulator has an ultra-compact footprint of 1.8 μm × 1 μm with a 100 nm × 100 nm modulating section based on the hybrid orthogonal geometry. The modulator takes advantage of the large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89 dB/μm. The simulated device has potential applications in the development of next generation high frequency photonic modulators for optical communications which require nanometer scale footprints, large modulation depth and small insertion losses.
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22

Su, Mingyang, Bo Yang, Junmin Liu, Huapeng Ye, Xinxing Zhou, Jiangnan Xiao, Ying Li, Shuqing Chen, and Dianyuan Fan. "Broadband graphene-on-silicon modulator with orthogonal hybrid plasmonic waveguides." Nanophotonics 9, no. 6 (May 18, 2020): 1529–38. http://dx.doi.org/10.1515/nanoph-2020-0165.

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Анотація:
AbstractGraphene, a two-dimensional nanomaterial, possess unique photoelectric properties that have potential application in designing optoelectronic devices. The tunable optical absorption is one of the most exciting properties that can be used to improve the performance of silicon modulators. However, the weak light–matter interaction caused by the size mismatch between the optical mode fields and graphene makes the graphene-on-silicon modulator (GOSM) has large footprint and high energy consumption, limiting the enhancement of modulation efficiency. Here, we propose a broadband GOSM with orthogonal hybrid plasmonic waveguides (HPWs) at near-infrared wavelengths. The orthogonal HPWs are designed to compress the interaction region of optical fields and enhance the light-graphene interaction. The results show that the GOSM has a modulation depth of 26.20 dB/μm, a footprint of 0.33 μm2, a 3 dB modulation bandwidth of 462.77 GHz, and energy consumption of 2.82 fJ/bit at 1.55 μm. Even working at a broad wavelength band ranging from 1.3 to 2 μm, the GOSM also has a modulation depth of over 8.58 dB/μm and energy consumption of below 4.97 fJ/bit. It is anticipated that with the excellent modulation performance, this GOSM may have great potential in broadband integrated modulators, on-chip optical communications and interconnects, etc.
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23

Cai, Ming, Shulong Wang, Zhihong Liu, Yindi Wang, Tao Han, and Hongxia Liu. "Graphene Electro-Optical Switch Modulator by Adjusting Propagation Length Based on Hybrid Plasmonic Waveguide in Infrared Band." Sensors 20, no. 10 (May 18, 2020): 2864. http://dx.doi.org/10.3390/s20102864.

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Анотація:
A modulator is the core of many optoelectronic applications such as communication and sensing. However, a traditional modulator can hardly reach high modulation depth. In order to achieve the higher modulation depth, a graphene electro-optical switch modulator is proposed by adjusting propagation length in the near infrared band. The switch modulator is designed based on a hybrid plasmonic waveguide structure, which is comprised of an SiO2 substrate, graphene–Si–graphene heterostructure, Ag nanowire and SiO2 cladding. The propagation length of the hybrid plasmonic waveguide varies from 0.14 μm to 20.43 μm by the voltage tunability of graphene in 1550 nm incident light. A modulator with a length of 3 μm is designed based on the hybrid waveguide and it achieves about 100% modulation depth. The lower energy loss (~1.71 fJ/bit) and larger 3 dB bandwidth (~83.91 GHz) are attractive for its application in a photoelectric integration field. In addition, the excellent robustness (error of modulation effects lower than 8.84%) is practical in the fabrication process. Most importantly, by using the method of adjusting propagation length, other types of graphene modulators can also achieve about 100% modulation depth.
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24

Wang, Yan, Tongtong Liu, Jiangyi Liu, Chuanbo Li, Zhuo Chen, and Shuhui Bo. "Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators." Journal of Semiconductors 43, no. 10 (October 1, 2022): 101301. http://dx.doi.org/10.1088/1674-4926/43/10/101301.

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Анотація:
Abstract High performance electro-optic modulator, as the key device of integrated ultra-wideband optical systems, have become the focus of research. Meanwhile, the organic-based hybrid electro-optic modulators, which make full use of the advantages of organic electro-optic (OEO) materials (e.g. high electro-optic coefficient, fast response speed, high bandwidth, easy processing/integration and low cost) have attracted considerable attention. In this paper, we introduce a series of high-performance OEO materials that exhibit good properties in electro-optic activity and thermal stability. In addition, the recent progress of organic-based hybrid electro-optic devices is reviewed, including photonic crystal-organic hybrid (PCOH), silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) modulators. A high-performance integrated optical platform based on OEO materials is a promising solution for growing high speeds and low power consumption in compact sizes.
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25

Baeuerle, Benedikt, Wolfgang Heni, Claudia Hoessbacher, Yuriy Fedoryshyn, Arne Josten, Christian Haffner, Tatsuhiko Watanabe, et al. "Reduced Equalization Needs of 100 GHz Bandwidth Plasmonic Modulators." Journal of Lightwave Technology 37, no. 9 (May 1, 2019): 2050–57. http://dx.doi.org/10.1109/jlt.2019.2897480.

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26

Cai, Wenshan, Justin S. White, and Mark L. Brongersma. "Compact, High-Speed and Power-Efficient Electrooptic Plasmonic Modulators." Nano Letters 9, no. 12 (December 9, 2009): 4403–11. http://dx.doi.org/10.1021/nl902701b.

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27

Jin Tae Kim. "Silicon Optical Modulators Based on Tunable Plasmonic Directional Couplers." IEEE Journal of Selected Topics in Quantum Electronics 21, no. 4 (July 2015): 184–91. http://dx.doi.org/10.1109/jstqe.2014.2346623.

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28

Gosciniak, Jacek, and Dawn T. H. Tan. "Graphene-based waveguide integrated dielectric-loaded plasmonic electro-absorption modulators." Nanotechnology 24, no. 18 (April 10, 2013): 185202. http://dx.doi.org/10.1088/0957-4484/24/18/185202.

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29

Zografopoulos, Dimitrios C., Mohamed Swillam, and Romeo Beccherelli. "Hybrid Plasmonic Modulators and Filters Based on Electromagnetically Induced Transparency." IEEE Photonics Technology Letters 28, no. 7 (April 1, 2016): 818–21. http://dx.doi.org/10.1109/lpt.2016.2514362.

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30

Fouad, Nourhan H., Aya O. Zaki, Dimitrios C. Zografopoulos, Romeo Beccherelli, and Mohamed A. Swillam. "Low power hybrid plasmonic microring-on-disks electro-optical modulators." Journal of Nanophotonics 11, no. 1 (March 9, 2017): 016014. http://dx.doi.org/10.1117/1.jnp.11.016014.

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31

Lao, Jieer, Jin Tao, Qi Jie Wang, and Xu Guang Huang. "Tunable graphene-based plasmonic waveguides: nano modulators and nano attenuators." Laser & Photonics Reviews 8, no. 4 (March 26, 2014): 569–74. http://dx.doi.org/10.1002/lpor.201300199.

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32

Yin, Anxiang, Qiyuan He, Zhaoyang Lin, Liang Luo, Yuan Liu, Sen Yang, Hao Wu, Mengning Ding, Yu Huang, and Xiangfeng Duan. "Plasmonic/Nonlinear Optical Material Core/Shell Nanorods as Nanoscale Plasmon Modulators and Optical Voltage Sensors." Angewandte Chemie 128, no. 2 (November 24, 2015): 593–97. http://dx.doi.org/10.1002/ange.201508586.

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33

Yin, Anxiang, Qiyuan He, Zhaoyang Lin, Liang Luo, Yuan Liu, Sen Yang, Hao Wu, Mengning Ding, Yu Huang, and Xiangfeng Duan. "Plasmonic/Nonlinear Optical Material Core/Shell Nanorods as Nanoscale Plasmon Modulators and Optical Voltage Sensors." Angewandte Chemie International Edition 55, no. 2 (November 24, 2015): 583–87. http://dx.doi.org/10.1002/anie.201508586.

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34

Liang, Yubo, Guangqing Wang, Yan Cheng, Duo Cao, Dejun Yang, Xiaoyong He, Fangting Lin, and Feng Liu. "Investigation of 3D Dirac semimetal supported terahertz dielectric-loaded plasmonic waveguides." Communications in Theoretical Physics 74, no. 12 (November 21, 2022): 125702. http://dx.doi.org/10.1088/1572-9494/ac7cda.

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Анотація:
Abstract The tunable propagation properties of 3D Dirac semimetal (DSM)-supported dielectric-loaded surface plasmons structures have been investigated in the THz regime, including the influences of the Fermi level of 3D DSM layer, the fiber shape and operation frequencies. The results indicate that the shape of dielectric fiber affects the hybrid mode significantly, on the condition that if a x (the semi-minor axis length of the dielectric semi-ellipse) is relatively small, the fiber shows good mode confinement and low loss simultaneously, and the figure of merit reaches more than 200. The propagation property can be manipulated in a wide range by changing the Fermi level of 3D DSM, e.g. if the Fermi level varies in the range of 0.05 eV–0.15 eV, the propagation length changes in the range of 9.073 × 103–2.715 × 104 μm, and the corresponding modulation depth is 66.5%. These results are very helpful to understand the tunable mechanisms of the 3D DSM plasmonic devices, such as switchers, modulators, and sensors.
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35

Sorger, Volker J., Norberto D. Lanzillotti-Kimura, Ren-Min Ma, and Xiang Zhang. "Ultra-compact silicon nanophotonic modulator with broadband response." Nanophotonics 1, no. 1 (July 1, 2012): 17–22. http://dx.doi.org/10.1515/nanoph-2012-0009.

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Анотація:
AbstractElectro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.
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36

Atwater, Harry A., Stefan Maier, Albert Polman, Jennifer A. Dionne, and Luke Sweatlock. "The New “p–n Junction”: Plasmonics Enables Photonic Access to the Nanoworld." MRS Bulletin 30, no. 5 (May 2005): 385–89. http://dx.doi.org/10.1557/mrs2005.277.

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Анотація:
AbstractSince the development of the light microscope in the 16th century, optical device size and performance have been limited by diffraction. Optoelectronic devices of today are much bigger than the smallest electronic devices for this reason. Achieving control of light—material interactions for photonic device applications at the nanoscale requires structures that guide electromagnetic energy with subwavelength-scale mode confinement. By converting the optical mode into nonradiating surface plasmons, electromagnetic energy can be guided in structures with lateral dimensions of less than 10% of the free-space wavelength. A variety of methods—including electron-beam lithography and self-assembly—have been used to construct both particle and planar plasmon waveguides. Recent experimental studies have confirmed the strongly coupled collective plasmonic modes of metallic nanostructures. In plasmon waveguides consisting of closely spaced silver rods, electromagnetic energy transport over distances of 0.5 m has been observed. Moreover, numerical simulations suggest the possibility of multi-centimeter plasmon propagation in thin metallic stripes. Thus, there appears to be no fundamental scaling limit to the size and density of photonic devices, and ongoing work is aimed at identifying important device performance criteria in the subwavelength size regime. Ultimately, it may be possible to design an entire class of subwavelength-scale optoelectronic components (waveguides, sources, detectors, modulators) that could form the building blocks of an optical device technology—a technology scalable to molecular dimensions, with potential imaging, spectroscopy, and interconnection applications in computing, communications, and chemical/biological detection.
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37

Haffner, Christian, Wolfgang Heni, Yuriy Fedoryshyn, Arne Josten, Benedikt Baeuerle, Claudia Hoessbacher, Yannick Salamin, et al. "Plasmonic Organic Hybrid Modulators—Scaling Highest Speed Photonics to the Microscale." Proceedings of the IEEE 104, no. 12 (December 2016): 2362–79. http://dx.doi.org/10.1109/jproc.2016.2547990.

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38

Babicheva, Viktoriia E., Nathaniel Kinsey, Gururaj V. Naik, Marcello Ferrera, Andrei V. Lavrinenko, Vladimir M. Shalaev, and Alexandra Boltasseva. "Towards CMOS-compatible nanophotonics: Ultra-compact modulators using alternative plasmonic materials." Optics Express 21, no. 22 (November 4, 2013): 27326. http://dx.doi.org/10.1364/oe.21.027326.

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39

Sun, Xiaomeng, Linjie Zhou, Xinwan Li, Jingya Xie, and Jianping Chen. "Electrically tunable silicon plasmonic phase modulators with nano-scale optical confinement." Frontiers of Optoelectronics in China 4, no. 4 (December 2011): 359–63. http://dx.doi.org/10.1007/s12200-011-0176-3.

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40

Sun, Miao, William Shieh, and Ranjith R. Unnithan. "Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator." IEEE Photonics Journal 9, no. 3 (June 2017): 1–10. http://dx.doi.org/10.1109/jphot.2017.2690448.

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41

Shi, Kaifeng, and Zhaolin Lu. "Optical modulators and beam steering based on electrically tunable plasmonic material." Journal of Nanophotonics 9, no. 1 (January 20, 2015): 093793. http://dx.doi.org/10.1117/1.jnp.9.093793.

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42

Riedel, Christoph A., Kai Sun, Otto L. Muskens, and CH de Groot. "Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces." Optics Express 25, no. 9 (April 21, 2017): 10031. http://dx.doi.org/10.1364/oe.25.010031.

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43

Yin, Anxiang, Qiyuan He, Zhaoyang Lin, Liang Luo, Yuan Liu, Sen Yang, Hao Wu, Mengning Ding, Yu Huang, and Xiangfeng Duan. "Berichtigung: Plasmonic/Nonlinear Optical Material Core/Shell Nanorods as Nanoscale Plasmon Modulators and Optical Voltage Sensors." Angewandte Chemie 129, no. 13 (March 14, 2017): 3464. http://dx.doi.org/10.1002/ange.201700978.

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44

Yin, Anxiang, Qiyuan He, Zhaoyang Lin, Liang Luo, Yuan Liu, Sen Yang, Hao Wu, Mengning Ding, Yu Huang, and Xiangfeng Duan. "Corrigendum: Plasmonic/Nonlinear Optical Material Core/Shell Nanorods as Nanoscale Plasmon Modulators and Optical Voltage Sensors." Angewandte Chemie International Edition 56, no. 13 (March 15, 2017): 3414. http://dx.doi.org/10.1002/anie.201700978.

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45

Ma, Zhizhen, Zhuoran Li, Ke Liu, Chenran Ye, and Volker J. Sorger. "Indium-Tin-Oxide for High-performance Electro-optic Modulation." Nanophotonics 4, no. 1 (June 30, 2015): 198–213. http://dx.doi.org/10.1515/nanoph-2015-0006.

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Анотація:
Abstract:Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffractionlimited devices.
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46

Xu, Heng, Zhaojian Zhang, Shangwu Wang, Yun Liu, Jingjing Zhang, Dingbo Chen, Jianming Ouyang, and Junbo Yang. "Tunable Graphene-Based Plasmon-Induced Transparency Based on Edge Mode in the Mid-Infrared Region." Nanomaterials 9, no. 3 (March 17, 2019): 448. http://dx.doi.org/10.3390/nano9030448.

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A monolayer-graphene-based concentric-double-rings (CDR) structure is reported to achieve broadband plasmon-induced transparency (PIT) on the strength of edge mode in the mid-infrared regime. The theoretical analysis and simulation results reveal that the structure designed here has two plasmonic resonance peaks at 39.1 and 55.4 THz, and a transparency window with high transmission amplitude at the frequency of 44.1 THz. Based on the edge mode coupling between neighbor graphene ribbons, PIT phenomenon is produced through the interference between different (bright and dark) modes. The frequency and bandwidth of the transparency window and slow light time could be effectively adjusted and controlled via changing geometrical parameters of graphene or applying different gate voltages. Additionally, this structure is insensitive to the polarization and incident angle. This work has potential application on the optical switches and slow light modulators.
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47

Zhu, Shiyang, G. Q. Lo, and D. L. Kwong. "Theoretical investigation of silicon MOS-type plasmonic slot waveguide based MZI modulators." Optics Express 18, no. 26 (December 17, 2010): 27802. http://dx.doi.org/10.1364/oe.18.027802.

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48

Vasić, Borislav, and Radoš Gajić. "Broadband and subwavelength terahertz modulators using tunable plasmonic crystals with semiconductor rods." Journal of Physics D: Applied Physics 45, no. 9 (February 17, 2012): 095101. http://dx.doi.org/10.1088/0022-3727/45/9/095101.

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49

Thomas, R., Z. Ikonic, and R. W. Kelsall. "Plasmonic Modulators for Near-Infrared Photonics on a Silicon-on-Insulator Platform." IEEE Journal of Selected Topics in Quantum Electronics 19, no. 3 (May 2013): 4601708. http://dx.doi.org/10.1109/jstqe.2012.2237386.

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50

Haffner, Christian, Wolfgang Heni, Delwin L. Elder, Yuriy Fedoryshyn, Nikola Đorđević, Daniel Chelladurai, Ueli Koch, et al. "Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators." Optical Materials Express 7, no. 7 (June 2, 2017): 2168. http://dx.doi.org/10.1364/ome.7.002168.

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