Статті в журналах з теми "Plasma Chemistry - SiH4"
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Orlicki, Dariusz, Vladimir Hlavacek, and Hendrik J. Viljoen. "Modeling of a–Si:H deposition in a dc glow discharge reactor." Journal of Materials Research 7, no. 8 (August 1992): 2160–81. http://dx.doi.org/10.1557/jmr.1992.2160.
Повний текст джерелаSchram, Daniel C. "Plasma processing and chemistry." Pure and Applied Chemistry 74, no. 3 (January 1, 2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.
Повний текст джерелаNakayama, Yoshikazu, Kazuo Wakimura, Seiki Takahashi, Hideki Kita, and Takao Kawamura. "Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4." Journal of Non-Crystalline Solids 77-78 (December 1985): 797–800. http://dx.doi.org/10.1016/0022-3093(85)90780-x.
Повний текст джерелаPark, Hwanyeol, and Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma." Coatings 11, no. 9 (August 29, 2021): 1041. http://dx.doi.org/10.3390/coatings11091041.
Повний текст джерелаKim, Ho Jun. "Importance of Dielectric Elements for Attaining Process Uniformity in Capacitively Coupled Plasma Deposition Reactors." Coatings 12, no. 4 (March 28, 2022): 457. http://dx.doi.org/10.3390/coatings12040457.
Повний текст джерелаMilne, S. B., Y. Q. Fu, J. K. Luo, A. J. Flewitt, S. Pisana, A. Fasoli, and W. I. Milne. "Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 5 (May 1, 2008): 2693–98. http://dx.doi.org/10.1166/jnn.2008.629.
Повний текст джерелаYuuki, Akimasa, Takaaki Kawahara, Yasuji Matsui, and Kunihide Tachibana. "A Study of Film Precursors in SiH4 Plasma-Enhanced CVD." KAGAKU KOGAKU RONBUNSHU 17, no. 4 (1991): 758–67. http://dx.doi.org/10.1252/kakoronbunshu.17.758.
Повний текст джерелаJo, Sanghyun, Suik Kang, Kyungjun Lee, and Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas." Coatings 12, no. 9 (September 15, 2022): 1342. http://dx.doi.org/10.3390/coatings12091342.
Повний текст джерелаKim, Dong-Joo, and Kyo-Seon Kim. "Effect of pulse modulation on particle growth during SiH4 plasma process." Korean Journal of Chemical Engineering 25, no. 4 (July 2008): 939–46. http://dx.doi.org/10.1007/s11814-008-0153-8.
Повний текст джерелаThang, Doan Ha, Hiroshi Muta, and Yoshinobu Kawai. "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H2 mixtures." Thin Solid Films 516, no. 13 (May 2008): 4452–55. http://dx.doi.org/10.1016/j.tsf.2007.10.099.
Повний текст джерелаNishimiya, Tatsuyuki, Tsukasa Yamane, Sachiko Nakao, Yoshiaki Takeuchi, Yasuhiro Yamauchi, Hiromu Takatsuka, Hiroshi Muta, Kiichiro Uchino, and Yoshinobu Kawai. "Characteristics of SiH4/H2 VHF plasma produced by short gap discharge." Surface and Coatings Technology 205 (July 2011): S411—S414. http://dx.doi.org/10.1016/j.surfcoat.2011.02.043.
Повний текст джерелаPark, N. M., S. H. Kim, G. Y. Sung, and S. J. Park. "Growth and Size Control of Amorphous Silicon Quantum Dots Using SiH4/N2 Plasma." Chemical Vapor Deposition 8, no. 6 (December 3, 2002): 254–56. http://dx.doi.org/10.1002/1521-3862(20021203)8:6<254::aid-cvde254>3.0.co;2-s.
Повний текст джерелаNaskar, S., S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass. "Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study." Journal of Materials Research 23, no. 5 (May 2008): 1433–42. http://dx.doi.org/10.1557/jmr.2008.0176.
Повний текст джерелаKim, Kyung-Soo, and D.-Hyun Jung. "The permeability characteristics of non-porous membrane by C7H5F3/SiH4, plasma polymeric membrane." Korean Journal of Chemical Engineering 17, no. 2 (March 2000): 149–55. http://dx.doi.org/10.1007/bf02707136.
Повний текст джерелаHajjar, J. ‐J J., and Rafael Reif. "Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures." Journal of The Electrochemical Society 137, no. 9 (September 1, 1990): 2888–96. http://dx.doi.org/10.1149/1.2087094.
Повний текст джерелаLEE, Su Jin, and Byungwhan KIM. "Deposition of silicon nitride film at room temperature using a SiH4–NH3–N2 plasma." Journal of the Ceramic Society of Japan 118, no. 1384 (2010): 1188–91. http://dx.doi.org/10.2109/jcersj2.118.1188.
Повний текст джерелаKumar, Sushil, Jhuma Gope, Aravind Kumar, A. Parashar, C. M. S. Rauthan, and P. N. Dixit. "High Pressure Growth of Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 8 (August 1, 2008): 4211–17. http://dx.doi.org/10.1166/jnn.2008.an20.
Повний текст джерелаBoogaarts, M. G. H., P. J. Böcker, W. M. M. Kessels, D. C. Schram, and M. C. M. van de Sanden. "Cavity ring down detection of SiH3 on the broadband à 2A1′ ← X̃ 2A1 transition in a remote Ar–H2–SiH4 plasma." Chemical Physics Letters 326, no. 5-6 (August 2000): 400–406. http://dx.doi.org/10.1016/s0009-2614(00)00795-8.
Повний текст джерелаSmith, Donald L., Andrew S. Alimonda, Chau‐Chen Chen, Steven E. Ready, and Barbara Wacker. "Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma." Journal of The Electrochemical Society 137, no. 2 (February 1, 1990): 614–23. http://dx.doi.org/10.1149/1.2086517.
Повний текст джерелаLoboda, M. J., and J. A. Seifferly. "Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H films." Journal of Materials Research 11, no. 2 (February 1996): 391–98. http://dx.doi.org/10.1557/jmr.1996.0048.
Повний текст джерелаYamauchi, Yasuhiro, Yoshiaki Takeuchi, Hiromu Takatsuka, Yuichi Kai, Hiroshi Muta, and Yoshinobu Kawai. "Large area SiH4/H2 VHF plasma produced at high pressure using multi-rod electrode." Surface and Coatings Technology 202, no. 22-23 (August 2008): 5668–71. http://dx.doi.org/10.1016/j.surfcoat.2008.06.041.
Повний текст джерелаAmbrosio, R. "Silicon–germanium films prepared from SiH4 and GeF4 by low frequency plasma deposition." Journal of Non-Crystalline Solids 329, no. 1-3 (November 1, 2003): 134–39. http://dx.doi.org/10.1016/j.jnoncrysol.2003.08.027.
Повний текст джерелаMorozov, O. V., and I. I. Amirov. "SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma." Russian Microelectronics 29, no. 3 (May 2000): 153–58. http://dx.doi.org/10.1007/bf02773255.
Повний текст джерелаItagaki, N., K. Sasaki, and Y. Kawai. "Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves." Thin Solid Films 506-507 (May 2006): 479–84. http://dx.doi.org/10.1016/j.tsf.2005.08.087.
Повний текст джерелаKim, Byungwhan, and Sang Hee Kwon. "Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma." Surface and Coatings Technology 202, no. 22-23 (August 2008): 5539–42. http://dx.doi.org/10.1016/j.surfcoat.2008.06.030.
Повний текст джерелаNagai, Takehiko, Arno H. M. Smets, and Michio Kondo. "Time-resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4–H2 VHF plasma." Journal of Non-Crystalline Solids 354, no. 19-25 (May 2008): 2096–99. http://dx.doi.org/10.1016/j.jnoncrysol.2007.09.009.
Повний текст джерелаZhou, Nan-Sheng, Shizuo Fujita, and Akio Sasaki. "Structural and electrical properties of plasma-deposited silicon nitride from SiH4-N2 gas mixture." Journal of Electronic Materials 14, no. 1 (January 1985): 55–72. http://dx.doi.org/10.1007/bf02657920.
Повний текст джерелаJia, Haijun, Jhantu K. Saha, Naoyuki Ohse, and Hajime Shirai. "High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma." Thin Solid Films 515, no. 17 (June 2007): 6713–20. http://dx.doi.org/10.1016/j.tsf.2007.01.055.
Повний текст джерелаKim, Jae-Hong, Chai-O. Chung, Dongsun Sheen, Yong-Sun Sohn, Hyun-Chul Sohn, Jin-Woong Kim, and Sung-Wook Park. "Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry." Journal of Applied Physics 96, no. 3 (August 2004): 1435–42. http://dx.doi.org/10.1063/1.1767979.
Повний текст джерелаKim, Byungwhan, Minji Kwon, and Yong Ho Seo. "Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma." Metals and Materials International 16, no. 4 (August 2010): 621–25. http://dx.doi.org/10.1007/s12540-010-0815-z.
Повний текст джерелаSaha, Jhantu K., Haijun Jia, Naoyuki Ohse, and Hajime Shirai. "High rate growth highly crystallized microcrystalline silicon films using SiH4/H2 high-density microwave plasma." Thin Solid Films 515, no. 9 (March 2007): 4098–104. http://dx.doi.org/10.1016/j.tsf.2006.02.062.
Повний текст джерелаCourtney, Clay H., Bradley C. Smith, and H. Henry Lamb. "Remote Plasma‐Enhanced Chemical Vapor Deposition of SiO2 Using Ar/ N 2 O and SiH4." Journal of The Electrochemical Society 145, no. 11 (November 1, 1998): 3957–62. http://dx.doi.org/10.1149/1.1838898.
Повний текст джерелаWinkler, R., M. Capitelli, C. Gorse, and J. Wilhelm. "Electron kinetics in a collision-dominated SiH4 rf plasma including self-consistent rf field strength calculation." Plasma Chemistry and Plasma Processing 10, no. 3 (September 1990): 419–42. http://dx.doi.org/10.1007/bf01447201.
Повний текст джерелаMoiseev, T., D. Chrastina, and G. Isella. "Plasma Composition by Mass Spectrometry in a Ar-SiH4-H2 LEPECVD Process During nc-Si Deposition." Plasma Chemistry and Plasma Processing 31, no. 1 (January 5, 2011): 157–74. http://dx.doi.org/10.1007/s11090-010-9277-9.
Повний текст джерелаSedov, V. S., A. K. Martyanov, A. A. Khomich, S. S. Savin, V. V. Voronov, R. A. Khmelnitskiy, A. P. Bolshakov та V. G. Ralchenko. "Co-deposition of diamond and β-SiC by microwave plasma CVD in H2-CH4-SiH4 gas mixtures". Diamond and Related Materials 98 (жовтень 2019): 107520. http://dx.doi.org/10.1016/j.diamond.2019.107520.
Повний текст джерелаJonas, Stanisława, Jadwiga Konefał-Góral, Anna Małek, Stanisława Kluska, and Zbigniew Grzesik. "Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method." High Temperature Materials and Processes 33, no. 5 (September 29, 2014): 391–98. http://dx.doi.org/10.1515/htmp-2013-0059.
Повний текст джерелаRemy, J., G. Dingemans, W. W. Stoffels, and G. M. W. Kroesen. "IN SITU IR OPTICAL MEASUREMENTS OF GAS PROPERTIES IN A CAPACITIVELY COUPLED RF Ar/SiH4 PLASMA." High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) 9, no. 1 (2005): 159–71. http://dx.doi.org/10.1615/hightempmatproc.v9.i1.130.
Повний текст джерелаLee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park, and Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition." Journal of The Electrochemical Society 145, no. 8 (August 1, 1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.
Повний текст джерелаZou, Xiangping, Xiaosu Yi, and Zhenkui Fang. "Preparation and characteristics of thin film with wear-resistant behavior on HDPE surface polymerized by C2H2-H2-SiH4 plasma." Journal of Applied Polymer Science 70, no. 8 (November 21, 1998): 1561–66. http://dx.doi.org/10.1002/(sici)1097-4628(19981121)70:8<1561::aid-app13>3.0.co;2-5.
Повний текст джерелаKessels, W. M. M., F. J. H. van Assche, P. J. van den Oever, and M. C. M. van de Sanden. "The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma." Journal of Non-Crystalline Solids 338-340 (June 2004): 37–41. http://dx.doi.org/10.1016/j.jnoncrysol.2004.02.017.
Повний текст джерелаBertran, E., J. M. López-Villegas, J. L. Andújar, J. Campmany, A. Canillas, and J. R. Morante. "Optical and electrical properties of a-SixNy:H films prepared by rf plasma using N2+SiH4 gas mixtures." Journal of Non-Crystalline Solids 137-138 (January 1991): 895–98. http://dx.doi.org/10.1016/s0022-3093(05)80264-9.
Повний текст джерелаJeong, Chaehwan, Seongjae Boo, Minsung Jeon, and Koichi Kamisako. "Characterization of Intrinsic a-Si:H Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition for Solar Cell Applications." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4169–73. http://dx.doi.org/10.1166/jnn.2007.064.
Повний текст джерелаKim, Ho Jun, and Jung Hwan Yoon. "Computational Fluid Dynamics Analysis of Particle Deposition Induced by a Showerhead Electrode in a Capacitively Coupled Plasma Reactor." Coatings 11, no. 8 (August 23, 2021): 1004. http://dx.doi.org/10.3390/coatings11081004.
Повний текст джерелаGatilova, L., S. Bouchoule, S. Guilet, and G. Patriarche. "High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 2 (March 2011): 020601. http://dx.doi.org/10.1116/1.3546024.
Повний текст джерелаLee, Sung-Eun, and Young-Chun Park. "Low-temperature deposition of SiNx, SiOxNy, and SiOx films from plasma discharge of SiH4 for polycarbonate glazing applications." Thin Solid Films 636 (August 2017): 34–39. http://dx.doi.org/10.1016/j.tsf.2017.04.022.
Повний текст джерелаKim, Byungwhan, Sanghee Kwon, Hyung-Su Woo, Jeong Kim, and Sang Chul Jung. "Radio Frequency Source Power-Induced Ion Energy Impact on SiN Films Deposited Using a Room Temperature SiH4–N2 Plasma." Journal of Nanoscience and Nanotechnology 11, no. 2 (February 1, 2011): 1314–18. http://dx.doi.org/10.1166/jnn.2011.3405.
Повний текст джерелаMorgan, W. L. "A critical evaluation of low-energy electron impact cross sections for plasma processing modeling. II: Cl4, SiH4, and CH4." Plasma Chemistry and Plasma Processing 12, no. 4 (December 1992): 477–93. http://dx.doi.org/10.1007/bf01447255.
Повний текст джерелаKim, D. J., J. Y. Hwang, T. J. Kim, N. E. Lee, and Y. D. Kim. "Effect of N2O/SiH4 flow ratio on properties of SiOx thin films deposited by low-temperature remote plasma-enhanced chemical deposition." Surface and Coatings Technology 201, no. 9-11 (February 2007): 5354–57. http://dx.doi.org/10.1016/j.surfcoat.2006.07.035.
Повний текст джерелаKosku, Nihan, and Seiichi Miyazaki. "Insights into the high-rate growth of highly crystallized silicon films from inductively coupled plasma of H2-diluted SiH4." Thin Solid Films 511-512 (July 2006): 265–70. http://dx.doi.org/10.1016/j.tsf.2005.12.105.
Повний текст джерелаDas, Debajyoti, Debnath Raha, and Koyel Bhattacharya. "Evolution of nc-Si Network and the Control of Its Growth by He/H2 Plasma Assistance in SiH4 at PECVD." Journal of Nanoscience and Nanotechnology 9, no. 9 (September 1, 2009): 5614–21. http://dx.doi.org/10.1166/jnn.2009.1151.
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