Дисертації з теми "Photonic Integrated Circuits (PICs)"
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Neto, Hugo Daniel Barbosa. "Packaging of photonic integrated circuits." Master's thesis, Universidade de Aveiro, 2017. http://hdl.handle.net/10773/23552.
Повний текст джерелаWith the continuous evolution of optical communication systems, emerged a need for high-performance optoelectronic elements at lower costs. Photonic packaging plays a key role for the next-generation of optical devices. In this work a standard packaging design rules is described, covering both the electrical and optical-packaging exploring both active and passive adjusting techniques, as well as the thermal management of the photonic integrated circuit (PIC). First a process for fiber-to-chip coupling with custom made ball-lensed fibers, is performed and tested initially in a testing-chip and thereafter in a manufactured practical study-case composed by a silicon holder with an InP distributed feedback (DFB) laser. The process of manufacturing etched V-grooves for fiber alignment is approached in detail. After this, for electrical interconnects and radio frequency (RF) packaging, both wire-bonding and flip-chip technique are discussed, and a characterization of the s-parameters in a PIC with wire-bonding is presented. A technique based on ruthenium-based sensors and platinum and titanium-based sensors for thermal control of the PIC is studied and the tested using a custom made PCB designed exclusively for that purpose.
Com a constante evolução dos sistemas de comunicação óticos veio a necessidade de componentes optoelectrónicos de elevada performance a custos relativamente baixos. O encapsulamento ótico tem um papel chave nos dispositivos óticos de última geração. Neste trabalho são descritas as regras de um processo de encapsulamento padrão, que abrange tanto o encapsulamento elétrico e ótico onde são exploradas técnicas de ajustamento ativas e passivas bem como o controlo térmico do circuito ótico integrado (PIC). No início foi efetuado um processo de acoplamento da fibra ao chip com fibras de lente esférica personalizadas, numa primeira usando um chip de teste e de seguida num caso de estudo prático que consiste numa estrutura composta por um holder de silício com um laser de realimentação distribuída (DFB). É abordado em detalhe o processo de fabricação de V-grooves para o alinhamento da fibra com o chip. De seguida são apresentadas e discutidas as técnicas de wire-bonding e flip-chip para o encapsulamento elétrico e ligação dos conectores de radiofrequência (RF), é feito um estudo onde são apresentados os resultados da caraterização dos parâmetros S de um PIC com wire-bonding. Para o controlo térmico do módulo é apresentada uma técnica baseada em sensores de temperatura de ruténio e sensores de Platina e titânio testada numa PCB personalizada
Morgado, Tiago Manuel Coelho. "Photonic integrated circuits for use in NG-PON2 networks." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/18520.
Повний текст джерелаNos dias que correm com a adoção generalizada de smartphones, conteúdos de vídeo, computação em nuvem e redes sociais, o volume de tráfego não para de aumentar. Assim, existe uma procura constante para melhorar a largura de banda das redes existentes. Neste contexto surgiu a Next Generation Passive Optical Network Phase (NG-PON) 2 a qual é um novo standard que vai permitir um aumento da largura de banda que pode chegar aos 80Gbps. O conhecimento dos requisitos do standard NG-PON 2 é importante, para que se possam produzir equipamentos que possam vir a ser utilizados nestas redes. Atualmente existe uma grande evolução nas comunicações óticas. Esta evolução tecnológica levou ao aparecimento de Photonic Integrated Circuits(PICs). Os PICs permitem a integração no mesmo chip de diversos componentes óticos permitindo assim construir circuitos com maior desempenho e fiabilidade. Cada vez mais, existe um grande investimento nesta área, estão inclusivamente a aparecer softwares cujo propósito é permitir aos utilizadores criar e simular PICs, para que estes possam ser posteriormente construídos. É então importante o conhecimento das caraterísticas mais importantes dos blocos que estes softwares permitem simular. Neste trabalho serão testados alguns blocos do “VPItoolkit PDK HHI” que é um toolkit que quando adicionado no software VPItransmissionMaker™, permite simular os componentes produzidos pelo Heinrich Hertz Institute (HHI). Com estes componentes, serão ainda feitas simulações visando a sua utilização em uma rede NG-PON2. Foi também dada grande atenção ao estudo dos Multimode Interference Devices (MMI) dos quais foi feito um modelo em MATLAB. E ao mach Zehnder Modulator (MZM) do qual foi realizada uma animação a demostrar dinamicamente a propagação da Luz dentro dele. Foram ainda sugeridas duas arquiteturas possíveis para um tranceiver a ser utilizado no Optical Network Unit (ONU) em redes NG-PON 2.
Nowadays with the widespread adoption of smartphones, video content, cloud computing and social networks, the volume of traffic is constantly increasing. Therefore, it exists a constant demand to improve the bandwidth of the existing networks. In this context emerged the Next Generation Passive Optical Network Phase (NG-PON 2), which is a new standard that will allow an increase in the bandwidth up to 80 Gbps. The knowledge of the requirements of the standard NG-PON 2 is important, to allow the production of equipment that can be used in these networks. Currently there is a major evolution in optical communications. This technological evolution has led to the emergence of Photonic Integrated Circuits (PICs). By using PICs various optical components can be integrated on the same chip, allowing to build circuits with higher performance and reliability. Currently there is a large investment in this area, software whose purpose is to allow users to create and simulate PICs are starting to appear, to subsequently allow a correct manufacturing of the PICs. It is important to know the most important features of these software blocks and what do they allow to simulate. During this work some blocks from "VPItoolkit PDK HHI" will be tested. "VPItoolkit PDK HHI" is a toolkit that when added in VPItransmissionMaker ™ software allows the simulation of the components produced by the Heinrich Hertz Institute (HHI). With these components, simulations were made to test their use in a NG-PON2 network. It was also given attention to the study of the Multimode Interference Devices (MMI) from which was created a model in MATLAB. And to the Mach Zehnder Modulator (MZM) from which was made an animation to dynamically demonstrate the propagation of light inside him. It was also suggested two possible architectures for a transceiver to be used on the Optical Network Unit (ONU) in NG-PON 2 networks.
Rodrigues, Carla Iolanda Costa. "Photonic integrated circuits for NG-EPON." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/22732.
Повний текст джерелаAlong with privacy and security, the growth of demand from the consumer for higher bandwidth presents one of the most important modern challenges in telecommunications infrastructures. The researchers were encouraged to nd not only e cient but also the economically viable solutions capable of meeting the growing needs of the consumer. Optical communications are the way that can accompany this growth. The Passive Optical Network (PON) is an architecture that shares the ber bandwidth among several users. There has been a constant study under this topic for the purpose of using all the ber abilities and to nd new solutions to keep the access network simple. Photonic Integrated Circuits (PICs) are a technology that emerged to help the complexity of the hardware that exists nowadays. It is a single chip capable of integrating numerous optical components, which leads to a reduced complexity, size and power consumption. These are the important characteristics that make the PICs a powerful tool to use in several applications. This dissertation presents a monolithic PIC transceiver in the context of Next Generation of Ethernet Passive Optical Network (NG-EPON) which aims to design and implement integrated optical circuits for future access networks. The transceiver architecture is able to be used as an Optical Network Unit (ONU) with a 4 channels approach for 100 Gb/s solutions. The present work contributed for the FUTPON project supported by P2020.
Em par com a privacidade e segurança, a crescente procura do consumidor por maiores larguras de banda apresenta um dos mais importantes desafios modernos das infraestruturas de telecomunicações. Esta procura incentiva assim a investigação de novas soluções não são eficientes, mas também economicamente viáveis, capazes de satisfazer as crescentes necessidades do consumidor. As comunicações óticas apresentam ser o meio apropriado para acompanhar este crescimento. A Rede Óptica Passiva (PON) e uma arquitectura usada para distribuição de fibra ótica ate ao consumidor final. Esta tecnologia permite dividir a largura de banda de uma única fibra por diferentes clientes. Tem havido um estudo constante no âmbito deste tópico para conseguir tirar máximo partido das capacidades da fibra e de modo a encontrar novas soluções para tornar este método mais simples. Os Circuitos Oticos Integrados (PIC) sao uma tecnologia que surge para ajudar na complexidade do hardware existente hoje em dia. Consiste num único chip capaz de integrar vários componentes óticos, o que leva a uma diminuição da complexidade, tamanho e redução do consumo de energia. Estas características fazem com que seja uma tecnologia vantajosa para uso em diferentes aplicações. O desenho e a implementação da arquitectura do transrecetor em formato PIC no contexto da Next Generation of Ethernet Passive Optical Network (NG-EPON), e o principal objectivo desta dissertação onde visa o desenvolvimento circuitos óticos integrados para redes oticas de acesso futuras. Esta arquitectura devera ser utilizada como Optical Network Unit (ONU) contendo 4 canais para atingir 100 Gb/s. Este trabalho contribuiu para o projecto FUTPON suportado pelo P2020.
Franco, Eduardo Vala. "Photonic integrated circuits for next generation PONs." Master's thesis, Universidade de Aveiro, 2017. http://hdl.handle.net/10773/23473.
Повний текст джерелаWe are living in a time where communications became essential for most of our lives, whether it's in the business world, or in our own homes. The increasing need of higher bandwidth inhibits other networks other than optical ber based ones. Nowadays communications are responsible for a substantial percentage of our energetic footprint, hence Passive Optical Network(PON) are a strong contender for the next step of network implementation. These networks present a low energy consumption because between the transmitter and the receiver the signal stays in the optical domain. Although the increasing needs of bandwidth is almost across the communication world, certain services/identities need more bandwidth whether is download or upload. It's easy to understand that di erent consumers have unique needs. It's necessary to develop an architecture that serves all the costumers, in other words, there is a need for a network that provides high bitrate tra c to the users that needs it but also a network that serves the low end user that is not interested in this increase of bandwidth and therefore price in ation. There is today technologies yet to be widely implemented like NG-PON2 that were not implemented in a large scale because they dont represent a nancial return to the telecom operators simply because there is not enough user that requires the high bandwidth delivered by NG-PON2. It's necessary to nd a solution that includes not only the modern technologies but also the already implemented ones. With the objective of nding a solution for the problems mentioned before, this dissertation has the objective of designing a Photonic Integrated Circuit(PIC) that aims to be a transceiver of a Multitech Network that will be composed by the following technologies: Video-Overlay, XG-PON e NG-PON2. This dissertation presents an approach on Passive Optical Networks( PON) and the standards of the said technologies as well as a study of the components needed to assemble the transceiver using the programs ASPIC and VPI Photonics . In the end, there will be presented an architecture for the transceiver to be used in a Optical Network Unit(ONU), and the respective mask Layout.
Vivemos numa época em que as comunicações se tornaram essenciais para grande parte da nossa vida, seja no mundo empresarial, seja nas nossas habitações. A crescente necessidade de aumento de largura de banda inviabiliza outras redes que não baseadas em braotica. Actualmente as comunicações são responsáveis por uma percentagem substancial dos nossos gastos energéticos, justamente por este facto Passive Optical Networks(PON) sao as principais candidatas ao próximo passo no desenvolvimento de redes. Estas apresentam menor consumo energético, pois entre o emissor e o receptor todo o sinal permanece no domínio óptico. Apesar da necessidade de largura de banda estar a aumentar de um modo transversal no mundo das telecomunicações, certos serviços/entidades necessitam de maiores velocidades tanto em termos de download como em termos de upload. E então fácil de perceber que consumidores diferentes têm necessidades diferentes. E necessário encontrar uma arquitectura que agrade a quem necessita de maiores larguras de banda mas também a quem não necessita de um aumento significativo e que, não está disposto a pagar por este. Existem neste momento tecnologias que ainda não foram implementadas em grandes escalas, como o caso de Next Generation Passive Optical Network (NG-PON2), porque não simbolizam um retorno financeiro para as grande operadores, uma vez que o número de potenciais consumidores de tais velocidades ainda não e substancialmente grande. E necessário encontrar uma solução que não so englobe as novas tecnologias como também as já existentes. Com o objectivo de se encontrar um solução para os problemas acima referidos, este trabalho assenta na elaboração de um Circuito integrado fotonico que visa ser um transrecetor de uma arquitetura multi-tecnologia em que irão ser incorporadas tecnologias como Video-Overlay, 10 Gigabit-capable Passive Optical Network (XG-PON) e NG-PON2. Esta dissertação apresenta uma abordagem as Redes Oticas Passivas e também um estudo feito aos componentes usados no transreceptor usando os programas Aspic e VPI Photonics . Porém ser a apresentado o desenho final do transreceptor que ser a usado numa Optical Network Unit(ONU).
Ferreira, Ana Rita Rodrigues. "Photonic integrated circuits development: a universal transceiver for NG-PON2." Master's thesis, Universidade de Aveiro, 2015. http://hdl.handle.net/10773/15974.
Повний текст джерелаIn the last years there has been a clear evolution in the world of telecommunications, which goes from new services that need higher speeds and higher bandwidth, until a role of interactions between people and machines, named by Internet of Things (IoT). So, the only technology able to follow this growth is the optical communications. Currently the solution that enables to overcome the day-by-day needs, like collaborative job, audio and video communications and share of les is based on Gigabit-capable Passive Optical Network (G-PON) with the recently successor named Next Generation Passive Optical Network Phase 2 (NG-PON2). This technology is based on the multiplexing domain wavelength and due to its characteristics and performance becomes the more advantageous technology. A major focus of optical communications are Photonic Integrated Circuits (PICs). These can include various components into a single device, which simpli es the design of the optical system, reducing space and power consumption, and improves reliability. These characteristics make this type of devices useful for several applications, that justi es the investments in the development of the technology into a very high level of performance and reliability in terms of the building blocks. With the goal to develop the optical networks of future generations, this work presents the design and implementation of a PIC, which is intended to be a universal transceiver for applications for NG-PON2. The same PIC will be able to be used as an Optical Line Terminal (OLT) or an Optical Network Unit (ONU) and in both cases as transmitter and receiver. Initially a study is made of Passive Optical Network (PON) and its standards. Therefore it is done a theoretical overview that explores the materials used in the development and production of this PIC, which foundries are available, and focusing in SMART Photonics, the components used in the development of this chip. For the conceptualization of the project di erent architectures are designed and part of the laser cavity is simulated using Aspic™. Through the analysis of advantages and disadvantages of each one, it is chosen the best to be used in the implementation. Moreover, the architecture of the transceiver is simulated block by block through the VPItransmissionMaker™ and it is demonstrated its operating principle. Finally it is presented the PIC implementation.
Nos últimos anos tem existido uma evidente evolução no mundo das telecomunicações, que vai desde novos serviços que requerem maiores velocidades e maior largura de banda, a um role de interações entre pessoas e máquinas, designada por Internet of Things (IoT). Assim, a única tecnologia capaz de acompanhar este crescimento são as comunicações óticas. Atualmente a solução que permite colmatar as necessidades do dia-a-dia, tais como trabalhar colaborativamente, comunicar por áudio e vídeo, e partilhar ficheiros, é baseada no Gigabit-capable Passive Optical Network (G-PON) com a mais recente evolução designada por Next Generation Passive Optical Network Phase 2 (NG-PON2). Esta tecnologia baseia-se na multiplexagem no domínio do comprimento de onda e devido às suas características e desempenho torna-se a tecnologia mais vantajosa. Um dos principais focos das comunicações óticas são os Photonic Integrated Circuits (PICs). Estes conseguem englobar num único dispositivo vários componentes, o que simplifica o desenho do sistema ótico, reduzindo o espaço e o consumo de energia e melhora a confiabilidade. Estas caracteristicas tornam este tipo de dispositivos vantajosos para uma série de aplicações, justificando os investimentos no desenvolvimento da tecnologia para um nível muito elevado de desempenho e fiabilidade ao nível dos blocos de construção. Com o objetivo de desenvolver as redes óticas passivas de futuras gerações, este trabalho apresenta o desenho e a implementação de um PIC que visa ser um transrecetor universal para aplicações para NG-PON2. O mesmo PIC pode ser usado como Optical Line Terminal (OLT) ou como Optical Network Unit (ONU) e em ambos os casos como transmissor e recetor. Inicialmente é feito um estudo das redes óticas passivas e os seus standards. Seguidamente é feita uma abordagem teórica que explora um pouco dos materiais usados no desenvolvimento e produção de um PIC, quais as fábricas existentes, focando na SMART Photonics e os componentes usados no desenvolvimento deste chip. Com vista à concetualização do projeto, diferentes arquiteturas são desenhadas e a parte da cavidade do laser é simulada usando o Aspic™. Partindo da análise das vantagens e desvantagens de cada uma delas, é escolhida a melhor para utilizar na implementação. De seguida, a arquitetura do transrecetor é simulada bloco a bloco através do VPItransmissionMaker™ e é demonstrado o seu princípio de funcionamento. Finalmente é apresentada a implementação do PIC.
Piqueras, Ruipérez Miguel Ángel. "Photonic Vector Processing Techniques for Radiofrequency Signals." Doctoral thesis, Universitat Politècnica de València, 2016. http://hdl.handle.net/10251/63264.
Повний текст джерела[ES] El procesamiento de señales de radiofrecuencia (RF) utilizando medios fotónicos es una disciplina que apareció casi al mismo tiempo que el láser y la fibra óptica. La fotónica ofrece la capacidad de manipular señales de radiofrecuencia de banda ancha, una baja atenuación, procesados basados en una amplia variedad de fenómenos lineales y no lineales y, recientemente, el potencial para implementar subsistemas fotónicos integrados. Estas características ofrecen un gran potencial para la implementación de múltiples funcionalidades incluyendo transporte óptico, conversión de frecuencia, filtrado óptico de RF, multiplexación y demultiplexación de señales, encaminamiento y conmutación, muestreo óptico, generación de tonos, líneas de retardo, conformación de haz en agrupaciones de antenas o generación fotónica de modulaciones digitales, e incluso una combinación de varias de estas funcionalidades. Esta tesis se centra en la aplicación del procesamiento vectorial en el dominio óptico de señales de radiofrecuencia en dos campos de aplicación: la conformación óptica de haces y la modulación y demodulación vectorial fotónica de señales digitales en cuadratura. El control fotónico vectorial permite manipular la amplitud y fase de las señales de radiofrecuencia en el dominio óptico, que es el procesamiento fundamental que se requiere en diferentes aplicaciones tales como las redes de conformación de haces para agrupaciones de antenas y en la modulación en cuadratura. El trabajo descrito en esta tesis incluye diferentes técnicas para implementar una versión fotónica de las redes de conformación de haces de en agrupaciones de antenas, conocidas como redes ópticas de conformación de haces (OBFN). Se estudian dos familias de redes: arquitecturas de retardo en fibra óptica y arquitecturas integradas. Las primeras permiten el control de señales de banda ancha utilizando fibras ópticas dispersivas con técnicas de multiplexado por división de longitud de onda y funcionalidades avanzadas tales como la estimación del ángulo de llegada de la señal en la antena receptora. En la segunda, se estudian redes de conformación pasivas basadas en Matrices de Butler ópticas integradas, incluyendo una solución ultra-compacta utilizando técnicas ópticas heterodinas en silicio sobre aislante (SOI), y una alternativa homodina en sílice dopado con germanio. En esta tesis, también se han investigado técnicas de procesado vectorial fotónico para la generación de modulaciones digitales en cuadratura. Las modulaciones multinivel codifican la información digital en estados discretos de fase y amplitud de una señal eléctrica para aumentar su eficiencia espectral, como por ejemplo la modulación en cuadratura. El procesado necesario para generar y demodular este tipo de señales implica el procesamiento vectorial (control de amplitud y fase) y la conversión de frecuencia. A diferencia de la implementación electrónica o digital convencional, en esta tesis se estudian diferentes técnicas de procesado fotónico tanto para la generación de modulaciones digitales (modulación vectorial fotónica, PVM) como para su demodulación (PVdM). Esto es de particular interés en el caso de señales de banda ancha, donde la velocidad de datos requerida es del orden de gigabits por segundo, para aplicaciones como backhaul inalámbrico de redes ópticas metropolitanas (conocida como fibra hasta el aire). Las técnicas descritas se basan en explotar la dispersión cromática de la fibra óptica, la multiplexación por división de longitud de onda y la conversión en frecuencia. Además, se presenta una solución heterodina implementada monolíticamente en un circuito integrado fotónico (PIC).
[CAT] El processament de senyals de radiofreqüència (RF) utilitzant mitjans fotònics és una disciplina que va aparèixer gairebé al mateix temps que el làser i la fibra òptica. La fotònica ofereix la capacitat de manipular senyals de radiofreqüència de banda ampla, una baixa atenuació, processats basats en una àmplia varietat de fenòmens lineals i no lineals i, recentment, el potencial per implementar subsistemes fotònics integrats. Aquestes característiques ofereixen un gran potencial per a la implementació de múltiples funcionalitats incloent transport òptic, conversió de freqüència, filtrat òptic de RF, multiplexació i demultiplexació de senyals, encaminament i commutació, mostreig òptic, generació de tons, línies de retard, conformació de feix en agrupacions d'antenes i la generació fotònica de modulacions digitals, i fins i tot una combinació de diverses d'aquestes funcionalitats. Aquesta tesi es centra en l'aplicació del processament vectorial en el domini òptic de senyals de radiofreqüència en dos camps d'aplicació: la conformació òptica de feixos i la modulació i demodulació vectorial fotònica de senyals digitals en quadratura. El control fotònic vectorial permet manipular l'amplitud i la fase dels senyals de radiofreqüència en el domini òptic, que és el processament fonamental que es requereix en diferents aplicacions com ara les xarxes de conformació de feixos per agrupacions d'antenes i en modulació multinivell. El treball descrit en aquesta tesi inclou diferents tècniques per implementar una versió fotònica de les xarxes de conformació de feixos en agrupacions d'antenes, conegudes com a xarxes òptiques de conformació de feixos (OBFN), amb els objectius de proporcionar un control precís en aplicacions terrestres de senyals de banda ampla a freqüències molt altes per sobre de 40 GHz en antenes de comunicacions, optimitzant la mida i el pes quan es compara amb els homòlegs elèctrics en aplicacions espacials, i la presentació de noves funcionalitats fotòniques per agrupacions d'antenes. Per tant, s'estudien dues famílies de OBFNs: arquitectures de retard en fibra òptica i arquitectures integrades. Les primeres permeten el control de senyals de banda ampla utilitzant fibres òptiques dispersives amb tècniques de multiplexació per divisió en longitud d'ona i funcionalitats avançades com ara l'estimació de l'angle d'arribada del senyal a l'antena receptora. A la segona, s'estudien xarxes de conformació passives basades en Matrius de Butler òptiques en fotònica integrada, incloent una solució ultra-compacta utilitzant tècniques òptiques heterodinas en silici sobre aïllant (SOI), i una alternativa homodina en sílice dopat amb germani. D'altra banda, també s'ha investigat en aquesta tesi tècniques de processament vectorial fotònic per a la generació de modulacions digitals en quadratura. Les modulacions multinivell codifiquen la informació digital en estats discrets de fase i amplitud d'un senyal elèctric per augmentar la seva eficiència espectral, com ara la modulació en quadratura. El processat necessari per generar i desmodular aquest tipus de senyals implica el processament vectorial (control d'amplitud i fase) i la conversió de freqüència. A diferència de la implementació electrònica o digital convencional, en aquesta tesi s'estudien diferents tècniques de processament fotònic tant per a la generació de modulacions digitals (modulació vectorial fotònica, PVM) com per la seva demodulació (PVdM). Això és de particular interès en el cas de senyals de banda ampla, on la velocitat de dades requerida és de l'ordre de gigabits per segon, per a aplicacions com backhaul sense fils de xarxes òptiques metropolitanes (coneguda com fibra fins l'aire). Les tècniques descrites es basen en explotar la dispersió cromàtica de la fibra òptica, la multiplexació per divisió en longitud d'ona i la conversió en freqüència. A més, es prese
Piqueras Ruipérez, MÁ. (2016). Photonic Vector Processing Techniques for Radiofrequency Signals [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/63264
TESIS
Chong, Harold Meng Hoon. "Photonic crystal and photonic wire structures for photonic integrated circuits." Thesis, University of Glasgow, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407719.
Повний текст джерелаMarinins, Aleksandrs. "Polymer Components for Photonic Integrated Circuits." Doctoral thesis, KTH, Skolan för teknikvetenskap (SCI), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-219556.
Повний текст джерелаQC 20171207
Alipour, Motaallem Seyed Payam. "Reconfigurable integrated photonic circuits on silicon." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51792.
Повний текст джерелаLiu, Weilin. "Ultra-Fast Photonic Signal Processors Based on Photonic Integrated Circuits." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/36446.
Повний текст джерелаWilliams, Ryan Daniel. "Photonic integrated circuits for optical logic applications." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/42025.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references.
The optical logic unit cell is the photonic analog to transistor-transistor logic in electronic devices. Active devices such as InP-based semiconductor optical amplifiers (SOA) emitting at 1550 nm are vertically integrated with passive waveguides using the asymmetric twin waveguide technique and the SOAs are placed in a Mach-Zehnder interferometer (MZI) configuration. By sending in high-intensity pulses, the gain characteristics, phase-shifting, and refractive indices of the SOA can be altered, creating constructive or deconstructive interference at the MZI output. Boolean logic and wavelength conversion can be achieved using this technique, building blocks for optical switching and signal regeneration. The fabrication of these devices is complex and the fabrication of two generations of devices is described in this thesis, including optimization of the mask design, photolithography, etching, and backside processing techniques. Testing and characterization of the active and passive components is also reported, confirming gain and emission at 1550 nm for the SOAs, as well as verifying evanescent coupling between the active and passive waveguides. In addition to the vertical integration of photonic waveguides, Esaki tunnel junctions are investigated for vertical electronic integration. Quantum dot formation and growth via molecular beam epitaxy is investigated for emission at the technologically important wavelength of 1310 nm. The effect of indium incorporation on tunnel junctions is investigated. The tunnel junctions are used to epitaxially link multiple quantum dot active regions in series and lasers are designed, fabricated, and tested.
by Ryan Daniel Williams.
Ph.D.
Sun, Xiaolan. "Quantum Well Intermixing For Photonic Integrated Circuits." Diss., The University of Arizona, 2007. http://hdl.handle.net/10150/194900.
Повний текст джерелаMöller, Anton. "Piezoelectric tuning of integrated photonic delay circuits." Thesis, KTH, Tillämpad fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-260415.
Повний текст джерелаCantarella, Giuseppe. "Design, microfabrication and characterisation of Photonic Integrated Circuits." Thesis, University of Strathclyde, 2017. http://digitool.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=28500.
Повний текст джерелаDainese, Matteo. "Plasma assisted technology for Si-based photonic integrated circuits." Doctoral thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-148.
Повний текст джерелаCho, Seong-Ho 1966. "Laser micromachining of active and passive photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/30086.
Повний текст джерелаIncludes bibliographical references (leaves 149-158).
This thesis describes the development of advanced laser resonators and applications of laser-induced micromachining for photonic circuit fabrication. Two major advantages of laser-induced micromachining are direct patterning and writing on large areas of substrates at high speed following the exposure of laser light, without using complicated photomask steps. For passive photonic devices fabrication, a novel femtosecond laser with unprecedented low repetition rates of 4 MHz is demonstrated to generate high intensity pulses, as high as 1.25 MW with 100 nJ pulse energies and 80 fs pulse durations directly from this laser resonator, without using any active devices or amplifiers. These high intensity pulses are applied to transparent glass materials to demonstrate micromachining of waveguides, gratings, couplers, and three dimensional waveguides and their beam couplings. Active and passive semiconductor devices can be monolithically integrated by employing high energy laser pulses to locally disorder quantum well regions. The 45 nm bandgap shifts at 1.55 ptm with a standard Q-switched Nd:YAG laser at 535 nm are realized. Finally, unidirectional semiconductor ring lasers for high-density integration are developed as a potential application to photonic integrated circuits. Hybrid semiconductor S-crossover and retro-reflected ring lasers, as prototypes for unidirectional operation, are built and result in up to 21.5 dB and 24.5 dB of counter-mode suppression ratio, respectively, which is in good agreement with theoretical predictions.
by Seong-Ho Cho.
Ph.D.
Prabhu, Mihika. "Towards optimal capacity-achieving transceivers with photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/115725.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 63-65).
Optical communication systems have many advantages over communication systems that operate in the radio-frequency range, including decreased size, weight, and power consumption and increased bandwidth. As a result, optical communication systems are emerging as the ideal choice in many resource-constrained links such as those deployed on spacecraft. This thesis presents progress on development of a programmable nanophotonic processor (PNP) for implementing a high-fidelity reconfigurable optical transceiver at the telecommunications wavelength. By encoding information in multiple spatial modes and detecting jointly over the modes using a unitary transform prior to detection, one can in principle attain Holevo-limited channel capacity in the low mean photon number regime. Since the PNP offers dynamic reprogrammability, one can also, in principle, correct for wavefront distortion in the channel. We present a setup, calibration protocols, and preliminary results towards a turbulence-resistant integrated BPSK transmitter and joint detection receiver channel that achieves superadditive channel capacity in the low mean photon number regime.
by Mihika Prabhu.
S.M.
Joshi, Siddharth. "Quantum dash based photonic integrated circuits for optical telecommunications." Thesis, Evry, Institut national des télécommunications, 2014. http://www.theses.fr/2014TELE0031/document.
Повний текст джерелаThis PhD dissertation presents a study on the properties of the novel quantum dash nanostructures and their properties for application in optical telecommunications. Over the last decade, scientific community has gained considerable interest over these nanostructures and several demonstrations have been made on their interesting optical and electronic properties, notably owing to their strong quantum confinement. This dissertation focuses on conception, fabrication and system demonstration of integrated optical transmitters based on quantum dash material. A first part of this work analyses the properties of qdashes theoretically and experimentally for their use as an active material in directly modulated lasers. The dynamic properties of this material are then evaluated leading to an optical transmission distances in range of 0-100km under direct modulation. The transmission is particularly studied with a passive optical filter to enhance the dynamic extinction ratio, the use of such passive filters is studied in detail. An innovative and fully integrated optical transmitter is finally demonstrated by integrating a ring-resonator filter to a distributed feedback laser. The second part of this work focuses on mode locked lasers based on this material and in particular the methods of integration of such devices on InP are explored. Thus an innovative Bragg mirror design is developed leading to a mode locked laser integrated with a semiconductor optical amplifier
Liu, Qiankun. "SiGe photonic integrated circuits for mid-infrared sensing applications." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS166/document.
Повний текст джерелаMid-infrared (mid-IR) spectroscopy is a nearly universal way to identify chemical and biological substances, as most of the molecules have their vibrational and rotational resonances in the mid-IR wavelength range. Commercially available mid-IR systems are based on bulky and expensive equipment, while lots of efforts are now devoted to the reduction of their size down to chip-scale dimensions. The use of silicon photonics for the demonstration of mid-IR photonic circuits will benefit from reliable and high-volume fabrication to offer high performance, low cost, compact, lightweight and power consumption photonic circuits, which is particularly interesting for mid-IR spectroscopic sensing systems that need to be portable and low cost. Among the different materials available in silicon photonics, Germanium (Ge) and Silicon-Germanium (SiGe) alloys with a high Ge concentration are particularly interesting because of the wide transparency window of Ge up to 15 µm. In this context, the objective of this thesis is to investigate a new Ge-rich graded SiGe platform for mid-IR photonic circuits. Such new plateform was expected to benefit from a wide transparency wavelength range and a high versatility in terms of optical engineering (effective index, dispersion, …). During this thesis, different waveguides platforms based on different graded profiles have been investigated. First it has been shown that waveguides with low optical losses of less than 3 dB/cm can be obtained in a wide wavelength range, from 5.5 to 8.5 µm. A proof of concept of sensing based on the absorption of the evanescent component of the optical mode has then been demonstrated. Finally, elementary building blocs have been investigated. The first Bragg mirror-based Fabry Perot cavities and racetrack resonators have been demonstrated around 8 µm wavelength. A broadband dual-polarization MIR integrated spatial heterodyne Fourier-Transform spectrometer has also been obtained. All these results rely on material and device design, clean-room fabrication and experimental characterization. This work was done in the Framework of EU project INsPIRE in collaboration with Pr. Giovanni Isella from Politecnico Di Milano
Korn, Dietmar [Verfasser]. "Silicon-Organic Hybrid Platform for Photonic Integrated Circuits / Dietmar Korn." Karlsruhe : KIT Scientific Publishing, 2015. http://www.ksp.kit.edu.
Повний текст джерелаGreenspan, Jonathan. "Selective area epitaxy for indium phosphide based photonic integrated circuits." Thesis, McGill University, 2002. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=82883.
Повний текст джерелаWe report on a selective area epitaxy (SAE) process suitable for the fabrication of a PIC. The process includes a quantitative model, which for the first time, is capable of predicting the growth rate and composition of thin films selectively deposited by metalorganic chemical vapour deposition in areas close to the dielectric mask as well as areas several microns away. The accuracy of the model is demonstrated by comparing simulation results with experimental measurements of the thickness and composition profiles obtained by surface profilometry and energy dispersed X-ray respectively.
The process is applied to the fabrication of an elecroabsorption modulator and optical mode converter, monolithically integrated on an InP substrate. As part of the fabrication, quantitative modeling of the converter waveguide core deposition is employed to achieve a thickness profile previously designed by beam propagation calculations. Modeling is also used to predict the composition and strain shifts introduced by selective deposition, enabling the composition to be designed such that the maximum strain is minimized. Device measurements demonstrate that SAE is successfully used for the fabrication of a PIC with characteristics superior to those found in conventional devices.
Cemlyn, Benjamin R. "Dynamics of tunable lasers in small-scale photonic integrated circuits." Thesis, University of Essex, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605150.
Повний текст джерелаYang, Zhen. "Photonic integrated circuits for high speed sub-terahertz wireless communications." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708677.
Повний текст джерелаHolzwarth, Charles W. III (Charles Willett). "Material selection and nanofabrication techniques for electronic photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/53248.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 149-154).
Electronic-photonic integrated circuits have the potential to circumvent many of the performance bottlenecks of electronics. To achieve the full benefits of integrating photonics with electronics it is generally believed that wavelength-division multiplexing is needed; requiring an integrated optical device capable of multiplexing/demultiplexing operations. One such device is a bank of microring-resonator filters with precisely spaced resonant frequencies. In this work, a fabrication strategy based on scanning-electron-beam lithography (SEBL) is presented for precisely controlling the resonant frequency of microring-resonator filters. Using this strategy it is possible to achieve dimensional control, on the tens-of- picometer scale, as required for microring-resonator filter banks. To correct for resonant-frequency errors present after fabrication, two forms of postfabrication tuning, one dynamic and one static, are demonstrated. It is also shown that hydrogen silsesquioxane (HSQ) can be converted into a high-quality overcladding for photonic devices by optimizing the annealing process. Finally, a postfabrication technique of localized substrate removal is presented, enabling the integration of photonics with CMOS electronics. Second-order microring-resonator filter banks were fabricated using SiNx and Si as the high -index core materials. By controlling the electron-beam-exposure dose it is possible to change the average microring-waveguide width to a precision better than 75 pm, despite the 6 nm SEBL address grid. Using postfabrication tuning the remaining resonant-frequency errors can be reduced to less than 1 GHz.
(cont.) By annealing HSQ in a an 02 atmosphere using rapid thermal processing, it is possible to create thick overcladding layers that have essentially the same optical properties as SiO2 with the excellent gap-filling and planarization properties of HSQ. Using XeF2 to locally etch an underlying Si substrate, waveguides with a propagation loss of -10 dB/cm were fabricated out of polysilicon deposited on 50 nm of SiO2.
by Charles W. Holzwarth, Ill.
Ph.D.
Mekis, Attila 1972. "Theoretical design of photonic crystal devices for integrated optical circuits." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/9125.
Повний текст джерелаIncludes bibliographical references (p. 139-143).
In this thesis we investigate novel photonic crystal devices that can be used as building blocks of all-optical circuits. We contrast the behavior of light in photonic crystal systems and in their traditional counterparts. We exhibit that bends in photonic crystals are able to transmit light with over 90% efficiency for large bandwidths and with 100% efficiency for specific frequencies. In contrast to traditional waveguides, bound states in photonic crystal waveguides can also exist in constrictions and above the cutoff frequency. We discuss how to lower reflections encountered when photonic crystal waveguides are terminated, both in an experimental setup as well as in numerical simulations. We show that light can be very efficiently coupled into and out of photonic crystal waveguides using tapered dielectric waveguides. In time-domain simulations of photonic crystal waveguides, spurious reflections from cell edges can be eliminated by terminating the waveguide with a Bragg reflector waveguide. We demonstrate novel lasing action in two-dimensional photonic crystal slabs with gain media, where lasing occurs at saddle points in the band structure, in contrast to one-dimensional photonic crystals. We also design a photonic crystal slab with organic gain media that has a TE-like pseudogap. We demonstrate that such a slab can support a high-Q defect mode, enabling low threshold lasing, and we discuss how the quality factor depends on the design parameters. We also propose to use two dimensional photonic crystal slabs as directionally efficient free-space couplers. We draft methods to calculate the coupling constant both numerically and analytically, using a finite-difference time-domain method and the volume current method with a Green's function approach, respectively.
by Attila Mekis.
Ph.D.
Schillinger, Matthias. "Maximally localized photonic Wannier functions for the highly efficient description of integrated Photonic Crystal circuits." [S.l. : s.n.], 2006. http://digbib.ubka.uni-karlsruhe.de/volltexte/1000007183.
Повний текст джерелаLin, Chunchen. "Semiconductor-based nanophotonic and terahertz devices for integrated circuits applications." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 7.48 Mb., 180 p, 2006. http://wwwlib.umi.com/dissertations/fullcit/3221130.
Повний текст джерелаKoch, Thomas L., Michael Liehr, Douglas Coolbaugh, John E. Bowers, Rod Alferness, Michael Watts, and Lionel Kimerling. "The American Institute for Manufacturing Integrated Photonics: advancing the ecosystem." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621540.
Повний текст джерелаSamadian, Parya. "Photonic Integrated Circuits Challenges & Solutions: Homogenization, Polarization Management and Coupling." Thesis, Université d'Ottawa / University of Ottawa, 2015. http://hdl.handle.net/10393/33352.
Повний текст джерелаCegielski, Piotr [Verfasser]. "Development of Integrated Perovskite Lasers for Dielectric Photonic Circuits / Piotr Cegielski." München : Verlag Dr. Hut, 2019. http://d-nb.info/1198542934/34.
Повний текст джерелаBishop, Zofia Katarzyna. "III-V semiconductor nano-photonic devices for integrated quantum optical circuits." Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/22613/.
Повний текст джерелаZhu, Di S. M. Massachusetts Institute of Technology. "Superconducting nanowire single-photon detectors on aluminum nitride photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/108974.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 85-91).
With recent advances in integrated single-photon sources and quantum memories, onchip integration of high-performance single-photon detectors becomes increasingly important. The superconducting nanowire single-photon detector (SNSPD) is the leading single-photon counting technology for quantum information processing. Among various waveguide materials, aluminum nitride (AlN) is a promising candidate because of its exceptionally wide bandgap, and intrinsic piezoelectric and electro-optic properties. In this Master's thesis, we developed a complete fabrication process for making high-performance niobium nitride SNSPDs on AlN, and demonstrated their integration with AlN photonic waveguides. The detectors fabricated on this new substrate material have demonstrated saturated detection efficiency from visible to near-IR, sub-60-ps timing jitter, and ~6 ns reset time. This work will contribute towards building a fully integrated quantum photonic processor.
by Di Zhu.
S.M.
Goldstein, Jordan (Jordan A. ). "Large-scale integration of graphene optoelectronic devices in photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/106019.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 55-59).
Graphene is a 2D material recognized for its extremely high mobility and novel optoelectronic properties. In this thesis, we argue in favor of integrating graphene as an active optoelectronic material alongside optical waveguides on the back-end of CMOS ICs for photonic links in access network and computing applications. We describe a simple fabrication process which can accommodate both graphene modulators and photodetectors on almost any waveguide platform. We use this process to fabricate such devices on silicon waveguides and provide preliminary measurements. Finally, we discuss further research opportunities to improve graphene modulators and detectors to the point of being a competitive technology.
by Jordan Goldstein.
M. Eng.
Gan, Fuwan. "High-speed silicon electro-optic modulator for electronic photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/40498.
Повний текст джерелаIncludes bibliographical references (p. 173-184).
The development of future electronic-photonic integrated circuits (EPIC) based on silicon technology critically depends on the availability of CMOS-compatible high-speed modulators that enable the interaction of electronic and optical signals. This thesis investigates electrically driven Mach-Zehnder modulators based on high-index contrast silicon waveguide technology and electronic carrier injection. Modulators based on four different structures are investigated: the forward-biased PiN diode with and without lifetime reduction, the reverse-biased PIN/PN diode and a metal-oxide-semiconductor (MOS) structure. These devices are compared with each other in terms of achievable performance. A modulator based on the forward-biased PIN diode with lifetime reduction is designed to reach 34GHz bandwidth and a low figure of merit V -. L = 0.6V - cm using a carrier lifetime reduction and a graded doping profile. A bandwidth of 1-2GHz has been demonstrated so far which is considerably smaller than the design bandwidth due to high series resistance. Modulators based on the forward-biased PIN structure without lifetime reduction have a low figure of merit, very low voltage and extremely low power consumption in the low frequency regime.
(cont.) The measurements demonstrate a RF power consumption of 100mW for 25% modulation depth and a figure of merit of V, - L = 0.28V - cm at frequencies up to 10GHz. A pre-compensation technique, using a high pass filter which consists of a parallel resistor and capacitor, extends the modulator bandwidth from 100MHz to 5GHz experimentally. Further it is shown that, modulators based on the reverse-biased structure can in principle reach very high speed, up to 40-80GHz in design but it's difficult to reduce V, - L values close to or even below 1V - cm and the necessary drive voltage is higher than the voltage provided by the CMOS technology. For the measured bandwidth of the fabricated devices so far only 1-2GHz has been demonstrated. This discrepancy is caused by the RC delay due to the experimental setup and high contact resistance. Finally, the performance of the modulator based on the metal-on-semiconductor (MOS) structure is analyzed. Furthermore, an electrically driven Mach-Zehnder waveguide modulator based on a high-index contrast silicon split-ridge waveguide (SRW) technology and electronic carrier injection is proposed.
(cont.) The excellent optical and carrier confinement possible in high-index contrast waveguide devices, together with the forward biased operation and the good thermal heat sinking due to the silicon slab close to the waveguide, enables high speed modulation with small signal modulation bandwidths beyond 20GHz, a V, times length figure of merit of V, - L = 0.5Vcm and an insertion loss of about 5.3 dB. Finally, all-optical switches based on optical carrier-injection in high index contrast Si/Si02 split-ridge-waveguide (SRW) couplers are proposed. The waveguide devices are suitable for the construction of low-loss optical switch matrices as well as fast optical switching. These devices exhibit robustness against fabrication tolerances, improved heat sinking, good carrier confinement and high uniformity in transmission over the entire C-band of optical communications in contrast to comparable devices based on buried or ridge waveguides. A reasonably low electrical switching power of 1-10mW is predicted for switching frequencies in the 1MHz-1GHz range. Faster switching speed can be achieved by carrier lifetime reduction.
by Fuwan Gan.
Ph.D.
Aghajani, Armen. "Waveguide lasers in ytterbium doped tantalum pentoxide for integrated photonic circuits." Thesis, University of Southampton, 2015. https://eprints.soton.ac.uk/388523/.
Повний текст джерелаLiu, Jifeng Ph D. Massachusetts Institute of Technology. "GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38582.
Повний текст джерелаIncludes bibliographical references (p. 185-188).
The silicon electronic-photonic integrated circuit (EPIC) has emerged as a promising technology to break through the interconnect bottlenecks in telecommunications and on-chip interconnects. High performance photonic modulators and photodetectors compatible with Si complimentary metal oxide semiconductor (CMOS) devices are indispensable to achieve this goal. A photonic modulator generates optical "1" and "0" signals by switching the light on and off, while a photodetector converts the optical signals to electrical ones so that they can be processed by a CMOS circuit. Due to its compatibility with Si CMOS processing and adequate optoelectric properties, epitaxial GeSi material has been considered as a promising candidate to achieve this goal. This thesis investigates epitaxial GeSi photodetectors and electro-absorption (EA) modulators integrated with high index contrast Si(core)/Si02(cladding) waveguides to form an EPIC circuit on a Si platform with CMOS compatibility. Tensile strain is introduced into the GeSi material to enhance its optoelectronic properties. The effect of tensile strain on the band structure of Ge is systematically studied, and the deformation potential constants of Ge are derived from the experimental results with relatively high accuracy.
(cont.) Methods to engineer the tensile strain in Ge are demonstrated. Tensile strain in small, selectively grown Ge mesas and stripes with at least one dimension <<10 jim is also investigated. The results are instructive to design selectively grown GeSi EA modulators and photodetectors integrated with Si/SiO2 waveguides. Free-space coupled Ge photodetectors on Si are fabricated with significantly improved performance in the L band (1561-1620nm) of telecommunications as a result of strain engineering. We have demonstrated a selectively grown Ge photodetector on a Si platform with a bandwidth of 8.5 GHz and a high responsivity over a broad wavelength range of 650-1605 nm. Full responsivity was achieved at 0 bias and full bandwidth was obtained at 1 V reverse bias, compatible with the requirement of Si ultra-large scale integrated circuits (ULSI). The GeSi EA modulator is based on Franz-Keldysh (FK) effect, where the electric field shifts the direct band edge of the GeSi material and significantly enhances its absorption coefficient in the weakly absorbing regime. Therefore, by modulating the electric field in the GeSi material, we can modulate the intensity of the light of a certain range of wavelength that passes through the GeSi material. A strain-enhanced FK effect in tensile strained epitaxial Ge material is demonstrated.
(cont.) A waveguide-integrated GeSi EA modulator with 4.8 dB insertion loss, 9.8 dB extinction ratio and a bandwidth >50 GHz has been designed with the material composition and device structure optimized for operations around 1550 nm. The same material and device structure can be also used for waveguide-integrated photodetectors with a responsivity of 1.1 A/W at 1550 nm and a bandwidth >35 GHz. A method to monolithically integrate GeSi modulators, photodetectors and Si/SiO2 waveguides is proposed and the expected performance is evaluated. Waveguide-integrated GeSi photodetectors and EA modulators are fabricated on a standard 180 nm CMOS production line based on the design. We demonstrate a waveguide-integrated GeSi photodetector with a responsivity of 1.0 A/W at 1518 nm and a bandwidth >4.5 GHz, as well as a GeSi EA modulator with an extinction ratio of -0.3 dB. While the device performance of the EA modulator is far from ideal due to fabrication issues, the preliminary results demonstrate the feasibility of the electronic-photonic integration on a Si platform with GeSi modulator and detector devices. The problems in this first device processing are identified, and solutions are proposed and partially tested. The device performance could be greatly enhanced with improved processing technique.
by Jifeng Liu.
Ph.D.
Rodriguez, Sarah J. (Sarah Janelle) 1979. "Towards photonic integrated circuits : design and fabrication of passive InP waveguide bends." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/18055.
Повний текст джерелаIncludes bibliographical references (leaf 69).
Waveguide bends, in the (In,Ga)(As,P) material system, have been simulated, fabricated and tested. A process is developed for waveguides of 1 [micro]m through 7[micro]m widths. Waveguides containing S-bends of varying bending radii as well as resonator bends were examined. Inconsistent measurement results were obtained. Improved measurement methods have been suggested.
by Sarah J. Rodriguez.
S.M.
Seneviratne, Dilan Anuradha. "Materials and devices for optical switching and modulation of photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/39539.
Повний текст джерелаIncludes bibliographical references (p. 123-129).
The drive towards photonic integrated circuits (PIC) necessitates the development of new devices and materials capable of achieving miniaturization and integration on a CMOS compatible platform. Optical switching: fast modulation and add-drop switches, key components in a PIC, were investigated. A MEMS-based approach was utilized to control switching in planar ring resonator waveguide structures. A switch extinction ratio of 15 dB, switch speed of 60 is and 1 mW operating power were demonstrated. A metal-insulator transition material, V02, was identified as a material with potential for enhancing the switch speed with speeds in excess of gigahertz rates with minimal device footprint. Fundamental material transport properties and nonstoichiometry in VO2 were characterized. Nonstoichiometry as high as 5% was measured. A Frenkel defect model was used to describe the behavior in V02 in which vanadium interstitials were attributed to be the dominant ionic defect in the reducing regime. Frozen-in vanadium interstitials, acting as shallow donors lying 20 meV below the conduction band in the semiconducting phase, enhance the low temperature conductivity and free carrier concentration.
(cont.) VO2 was shown to exhibit an activated mobility in its semiconducting and "metallic" phases with room temperature mobility estimated to be 5x10-2 cm2/Vs. Electrical switch contrasts of as high as -5000 and optical extinction ratios of approximately 16 dB were demonstrated. Free carrier absorption due to shallow donor vanadium interstitials was identified as a dominant absorption mechanism at near-IR wavelengths. Control of the degree of nonstoichiometry was shown to influence the near-IR absorption effects. To address the need for an integrated fast switch for data encoding, a thin film electro-optic (E-O) modulator, based on barium titanate (BaTiO3) or barium titanate-strontium titanate (SrTiO3) superlattices, was developed. Mach-Zhender E-O modulators were designed, fabricated with CMOS compatible processing steps and tested. Effective electro-optic values as high as 73pmN/V, 2.5 times better performance compared to commercial bulk LiNbO3 technology was demonstrated, with device area less than 30,000 [mu]2.
by Dilan Anuradha Seneviratne.
Ph.D.
Wang, Jianwei. "Generating, manipulating, distributing and analysing light's quantum states using integrated photonic circuits." Thesis, University of Bristol, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.702227.
Повний текст джерелаLloret, Soler Juan Antonio. "Slow Light Effects in Photonic Integrated Circuits with Application to Microwave Photonics." Doctoral thesis, Universitat Politècnica de València, 2012. http://hdl.handle.net/10251/16472.
Повний текст джерелаLloret Soler, JA. (2012). Slow Light Effects in Photonic Integrated Circuits with Application to Microwave Photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/16472
Palancia
Saha, Susmita. "Design and optimization of multi-port beam splitters on integrated photonic circuits." Thesis, Linköpings universitet, Informationskodning, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-177762.
Повний текст джерелаRath, Patrik [Verfasser], and M. [Akademischer Betreuer] Wegener. "Integrated optomechanics and single-photon detection in diamond photonic integrated circuits / Patrik Rath ; Betreuer: M. Wegener." Karlsruhe : KIT-Bibliothek, 2016. http://d-nb.info/1123146136/34.
Повний текст джерелаZhu, Rui. "Integrated nano-optomechanics in photonic crystal." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS258/document.
Повний текст джерелаHigh purity reference oscillators are currently used in a wide variety of frequency control and timing applications including radar, GPS, space... Current trends in such fields call for miniaturized architectures with direct signal generation in the frequency range of interest, around few GHz. Recently, novel optomechanically-enhanced architectures have emerged with this purpose. Such optomechanically-driven oscillators not only generate microwave signals directly in the GHz frequency range with possibly low phase noise but also are amenable to a high degree of integration on single chip settings. This PhD work falls within this scope. The optomechanically-driven oscillator under study consists of suspended photonic crystal cavities coupled to integrated silicon-on-insulator waveguides in a three-dimensional architecture. These cavities harbor highly-confined optical modes around 1,55 µm and mechanical modes in the GHz and most importantly, feature a high phonon-photon spatial overlap, all resulting in an enhanced optomechanical coupling. This enhanced optomechanical coupling strength is here probed optically on photonic crystal structures with optimized design. These cavities are hosted in III-V semiconductor materials whose piezoelectricity enable us to integrate additional tools for probing and controlling mechanical vibrations via capacitive, piezoelectric or acoustic driving. This full control over the mechanical modes and optomechanical interaction, paves the way towards the implementation of integrated injection locking circuits of feedback loops for reducing the phase noise of the oscillator
Greedy, Stephen. "Advances in the Spectral Index method for the analysis of photonic integrated circuits." Thesis, University of Nottingham, 2002. http://eprints.nottingham.ac.uk/14043/.
Повний текст джерелаSánchez, Fandiño Javier Antonio. "Integrated Optical Filters for Microwave Photonic Applications." Doctoral thesis, Universitat Politècnica de València, 2016. http://hdl.handle.net/10251/67690.
Повний текст джерела[ES] La fotónica de microondas (MWP) es un campo de investigación que estudia el uso de tecnologías ópticas para generar, distribuir, procesar y analizar señales de RF. A pesar de su gran potencial para resolver algunos de los problemas a los que se enfrentan las industrias electrónica y de microondas, estos sistemas son voluminosos, caros y consumen mucha potencia. La fotónica de microondas integrada (IMWP) es un área emergente que promete solucionar todos estos inconvenientes a través de la utilización de circuitos ópticos integrados (PIC). En esta tesis, hemos pretendido avanzar un poco más en el acercamiento entre estas dos disciplinas. En concreto, nos hemos centrado en el diseño y caracterización experimental de PICs con filtros reconfigurables basados en interferómetros Mach-Zehnder cargados con anillos (RAMZI), y demostrado su potencial uso en diferentes aplicaciones de IMWP. Los filtros RAMZI están hecho básicamente de un MZI simétrico cargado con anillos, los cuales a su vez se acoplan a las ramas del interferómetro a través de distintos acopladores ópticos. Las contribuciones de este trabajo se pueden dividir en dos partes. En la primera, hemos demostrado acopladores y reflectores ópticos integrados con coeficientes de acoplo y reflexión variables. Éstos explotan las propiedades de los acopladores por interferencia multimodal (MMI), y su robustez les hace muy atractivos para la implementación de filtros RAMZI y de tipo reflectivo. Además, hemos analizado el impacto que las tolerancias de fabricación tienen en el rendimiento de un híbrido óptico de 90º basado en un MMI 4x4, el cual es un elemento fundamental en los sistemas de comunicaciones ópticas coherentes. En la segunda parte, hemos demostrado el uso de filtros RAMZI en tres aplicaciones distintas de IMWP. En concreto, hemos utilizado dichos filtros para implementar sistemas de medida de frecuencia instantánea (IFM), detección directa de señales moduladas en frecuencia para enlaces fotónicos, así como en filtros coherentes y sintonizables de MWP. También hemos desarrollado un análisis teórico de las limitaciones y problemas que existen en los sistemas IFM. A pesar de que todos los experimentos realizados han consistido en prototipos para una prueba de concepto, esperamos que futuros avances tecnológicos permitan que la fotónica de microondas se convierta algún día en una realidad comercial.
[CAT] La fotònica de microones (MWP) és un camp d'investigació que estudia l'ús de tecnologies òptiques per a generar, distribuir, processar y analitzar senyals de radiofreqüència. A pesar del seu gran potencial per a resoldre alguns dels problemes als que s'enfronten les indústries electrònica i de microones, estos sistemes son voluminosos, cars i consumixen molta potència. La fotònica de microones integrada (IMWP) és un àrea emergent que promet solucionar tots estos inconvenients a través de la utilització de circuits òptics integrats (PIC). En esta tesi, hem pretés avançar un poc més en l'acostament entre estes dos disciplines. En concret, ens hem centrat en el disseny i caracterització experimental de PICs amb filtres reconfigurables basats en interferòmetres Mach-Zehnder carregats amb anells (RAMZI), i demostrat el seu potencial en diferents aplicacions d' IMWP. Els filtres RAMZI estan fets bàsicament d'un MZI simètric carregat amb anells, els quals, al seu torn, s'acoblen a les branques del interferòmetre a través de distints acobladors òptics. Les contribucions d'este treball es poden dividir en dos parts. En la primera, hem demostrat acobladors i reflectors òptics integrats amb coeficients de transmissió i reflexió variables. Estos exploten les propietats dels acobladors per interferència multimodal (MMI), i la seua robustesa els fa molt atractius per a la implementació de filtres RAMZI i de tipo reflectiu. A més a més, hem analitzat l'impacte que les toleràncies de fabricació tenen en el rendiment d'un híbrid òptic de 90 graus basat en un MMI 4x4, el qual és un element fonamental en els sistemes de comunicacions òptiques coherents. En la segona part, hem demostrat l'ús de filtres RAMZI en tres aplicacions diferents de IMWP. En concret, hem utilitzat estos filtres per a implementar sistemes de mesura de freqüència instantània (IFM), detecció directa de senyals modulades en freqüència per a enllaços fotònics, així com en filtres coherents i sintonitzables de MWP. També hem desenvolupat una anàlisi teòrica de les limitacions i problemes que existixen en els sistemes IFM. A pesar de que tots els experiments realitzats han consistit en prototips per a una prova de concepte, esperem que futurs avanços tecnològics permeten que la fotònica de microones es convertisca algun dia en una realitat comercial.
Sánchez Fandiño, JA. (2016). Integrated Optical Filters for Microwave Photonic Applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/67690
TESIS
Pérez, López Daniel. "Integrated Microwave Photonic Processors using Waveguide Mesh Cores." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/91232.
Повний текст джерелаLos dispositivos integrados de fotónica de microondas ofrecen soluciones optimizadas para los sistemas de información y comunicación. Generalmente, están compuestos por diferentes arquitecturas en las que subsistemas ópticos y electrónicos se integran para optimizar las prestaciones, el consumo, el tamaño y el coste del dispositivo final. Hasta ahora, los circuitos/chips de propósito específico se han diseñado para proporcionar una funcionalidad concreta, requiriendo así un número considerable de iteraciones entre las etapas de diseño, fabricación y medida, que origina tiempos de desarrollo largos y costes demasiado elevados. Una alternativa, inspirada por las FPGA (del inglés Field Programmable Gate Array), es el procesador fotónico programable. Este dispositivo combina la integración de subsistemas de microondas, ópticos y electrónicos para realizar, mediante la programación de los mismos y sus interconexiones, diferentes funcionalidades. En este trabajo, proponemos por primera vez el concepto del procesador de propósito general, así como su arquitectura. Además, con el fin de diseñar, optimizar y evaluar las prestaciones básicas del dispositivo, hemos desarrollado un modelo analítico extremo a extremo basado en las componentes del campo electromagnético. El modelo desarrollado proporciona como resultado la ganancia, el ruido y el rango dinámico global para distintas configuraciones de modulación y detección, en función de los subsistemas y su configuración. El elemento principal del procesador es su núcleo óptico reconfigurable. Éste requiere un alto grado de flexibilidad y versatilidad para reconfigurar las interconexiones entre los distintos subsistemas y para sintetizar los circuitos para el procesado óptico. Para este subsistema, proponemos el diseño de guías de onda reconfigurables para la creación de mallados bidimensionales. En el marco de esta tesis, hemos propuesto dos nuevos nodos de interconexión óptica para mallas reconfigurables, con el objetivo de obtener un mayor grado de versatilidad. Una vez escogida la malla hexagonal para el núcleo del procesador, hemos analizado la configuración de un gran número de circuitos fotónicos integrados y de funcionalidades de fotónica de microondas. El trabajo se ha completado con la demonstración de la primera malla reconfigurable integrada en un chip de silicio, demostrando además la síntesis de 30 de las 100 funcionalidades que potencialmente se pueden obtener con la malla diseñada compuesta de 7 celdas hexagonales. Este hecho supone un record frente a los sistemas de propósito específico. El sistema puede aplicarse en diferentes campos como las comunicaciones, los sensores químicos y biomédicos, el procesado de señales, la gestión y procesamiento de redes y los sistemas de información cuánticos. El conjunto del trabajo realizado representa un paso importante en la evolución de este paradigma, y sienta las bases para una nueva era de dispositivos fotónicos de propósito general.
Els dispositius integrats de Fotònica de Microones oferixen solucions optimitzades per als sistemes d'informació i comunicació. Generalment, estan compostos per diferents arquitectures en què subsistemes òptics i electrònics s'integren per a optimitzar les prestacions, el consum, la grandària i el cost del dispositiu final. Fins ara, els circuits/xips de propòsit específic s'han dissenyat per a proporcionar una funcionalitat concreta, requerint així un nombre considerable d'iteracions entre les etapes de disseny, fabricació i mesura, que origina temps de desenrotllament llargs i costos massa elevats. Una alternativa, inspirada per les FPGA (de l'anglés Field Programmable Gate Array), és el processador fotònic programable. Este dispositiu combina la integració de subsistemes de microones, òptics i electrònics per a realitzar, per mitjà de la programació dels mateixos i les seues interconnexions, diferents funcionalitats. En este treball proposem per primera vegada el concepte del processador de propòsit general, així com la seua arquitectura. A més, a fi de dissenyar, optimitzar i avaluar les prestacions bàsiques del dispositiu, hem desenrotllat un model analític extrem a extrem basat en els components del camp electromagnètic. El model desenrotllat proporciona com resultat el guany, el soroll i el rang dinàmic global per a distintes configuracions de modulació i detecció, en funció dels subsistemes i la seua configuració. L'element principal del processador és el seu nucli òptic reconfigurable. Este requerix un alt grau de flexibilitat i versatilitat per a reconfigurar les interconnexions entre els distints subsistemes i per a sintetitzar els circuits per al processat òptic. Per a este subsistema, proposem el disseny de guies d'onda reconfigurables per a la creació de mallats bidimensionals. En el marc d'esta tesi, hem proposat dos nous nodes d'interconnexió òptica per a malles reconfigurables, amb l'objectiu d'obtindre un major grau de versatilitat. Una vegada triada la malla hexagonal per al nucli del processador, hem analitzat la configuració d'un gran nombre de circuits fotónicos integrats i de funcionalitats de fotónica de microones. El treball s'ha completat amb la demostració de la primera malla reconfigurable integrada en un xip de silici, demostrant a més la síntesi de 30 de les 100 funcionalitats que potencialment es poden obtindre amb la malla dissenyada composta de 7 cèl·lules hexagonals. Este fet suposa un rècord enfront dels sistemes de propòsit específic. El sistema pot aplicarse en diferents camps com les comunicacions, els sensors químics i biomèdics, el processat de senyals, la gestió i processament de xarxes i els sistemes d'informació quàntics. El conjunt del treball realitzat representa un pas important en l'evolució d'este paradigma, i assenta les bases per a una nova era de dispositius fotónicos de propòsit general.
Pérez López, D. (2017). Integrated Microwave Photonic Processors using Waveguide Mesh Cores [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/91232
TESIS
Feng, Ning-Ning Huang Wei-Ping. "Modeling, simulation and design techniques for high-density complex photonic integrated devices and circuits." *McMaster only, 2005.
Знайти повний текст джерелаMouradian, Sara L. (Sara Lambert). "A scalable quantum computation platform : solid state quantum memories coupled to photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/118096.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 93-107).
Quantum computation and communication systems exploit quantum mechanical effects to surpass their classical counterparts in certain applications. However, while proof-of-principle experimental demonstrations have been performed, these are limited to a handful of nodes with limited - and often immutable - connectivity. Here we demonstrate an integrated platform for solid state quantum information processing. Pre-characterized solid state quantum nodes (nitrogen vacancy centers in diamond nanophotonic structures) are placed into a photonic integrated circuit which allows for low-loss and phase-stable collection, routing, and detection of photons as well as on-chip state manipulation and classical control. Moreover, the fabrication of high-quality photonic resonators in diamond allows for the increased emission and collection rates of photons coherent with the spin state. These two advances promise an on-chip entanglement rate much larger than the decoherence rate, allowing the creation and maintenance of cluster states for quantum computation.
by Sara Lambert Mouradian.
Ph. D.
Duan, Jianan. "Dynamic and nonlinear properties of quantum dot lasers for photonic integrated circuits on silicon." Electronic Thesis or Diss., Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLT050.
Повний текст джерелаSilicon photonics have been introduced to overcome low efficiency and high energy consumption of telecom links using twisted pairs or coaxial cables. This technology provides novel functionality and high performance for applications in high speed communication systems, short reach optical interconnects, and the deployment of optical links from chipto-chip, board-to-board or rack-to-rack (datacom). Silicon is known as a very efficient semiconductor material for waveguiding light in particular owing to the strong index contrast with silica. However, the indirect bandgap of silicon makes light emission from silicon inefficient, and other techniques such as wafer- or flipchip bonding must be investigated if light emission is to be realized. The drawbacks of such heterogeneous integration concentrate on the high cost and the limited scalability. Lasers heterogeneously integrated on silicon are also more sensitive to optical reflections originating from the transition between passive/active interfaces. The best way to overcome these drawbacks is to move on to direct epitaxial growth of IIIV materials on silicon for photonics integration. In this context, quantum dot lasers using semiconductor atoms as a gain medium are ideal because they enable smaller devices, amplification with large thermal stability and high tolerance to epitaxial defects. Ultra-low noise optical transmitters are required not only for the coherent systems but also for future chipscale atomic clocks and radar related applications because of the sensitivity to the frequency noise and intensity noise can strongly affect the bit error rates. To this end, the first part of the thesis reports an intrinsic spectral linewidth as low as 80 kHz and a relative intensity noise less than - 150 dB/Hz in InAs/InP quantum dot lasers. In particular, it is shown that a small vertical coupling is more suitable for low intensity noise operation due to the suppression of the carrier noise in the excited state. The second part of the thesis investigates the dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon. As mentioned above, lasers heterogeneously integrated on silicon are more sensitive to parasitic reflections. When combined with external optical feedback, the laser stability can be dramatically affected. As no on-chip optical isolators integrated with lasers and having sufficient isolation ratio exist, the development of feedback insensitive transmitters remains a major objective. This thesis presents an error-free transmission of an epitaxial quantum dot laser on silicon externally modulated at 10 Gb/s and subjected to 100% optical feedback. Such remarkable feedback insensitivity directly results from the near-zero linewidth enhancement factor, the large damping factor, the strong contrast between the ground state and excited states and a shorter carrier lifetime. These results pave the way for future high-performance photonics integrated circuits on silicon operating without optical isolators
Duprez, Hélène. "From design to characterization of III-V on silicon lasers for photonic integrated circuits." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEC005/document.
Повний текст джерелаThis 3 years work covers the design, the process and the characterization of III-V on silicon lasers at 1.31 µm for datacommunication applications. In particular, the design part includes the optimization of the coupling between III V and Si using adiabatic tapers as well as the laser cavity, which is formed within the Si. Three types of lasers were studied, all of them based on cavities which consist of gratings: distributed feedback (DFB) lasers, distributed Bragg reflector (DBR) lasers and finally sampled-grating DBR (SGDBR) lasers. Regarding the DFB lasers, two solutions have been chosen: the grating is either etched on top or on the edges of the Si waveguide to form so called vertically or laterally coupled DFB lasers. The latter type, quite uncommon among hybrid III V on Si technologies, simplifies the process fabrication and broadens the designs possibilities.Not only the lasers demonstrated show high output powers (~20 mW in the waveguides) but also very good spectral purities (with a side mode suppression ratio higher than 50 dB), especially for the DFB ones. The SGDBR devices turn out to be continuously tunable over a wavelength range higher than 27 nm with a good spectral purity as well and an output power higher than 7 mW in the waveguide with great opportunities of improvement