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Статті в журналах з теми "Photoluminescence Excitation Spectroscopy"
Olsthoorn, S. M., F. A. J. M. Driessen, A. P. A. M. Eijkelenboom, and L. J. Giling. "Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As." Journal of Applied Physics 73, no. 11 (June 1993): 7798–803. http://dx.doi.org/10.1063/1.353953.
Повний текст джерелаWhite, M. E., K. P. O'Donnell, R. W. Martin, S. Pereira, C. J. Deatcher, and I. M. Watson. "Photoluminescence excitation spectroscopy of InGaN epilayers." Materials Science and Engineering: B 93, no. 1-3 (May 2002): 147–49. http://dx.doi.org/10.1016/s0921-5107(02)00025-9.
Повний текст джерелаSinha, S., S. Banerjee, and B. M. Arora. "Photoluminescence-excitation spectroscopy of porous silicon." Physical Review B 49, no. 8 (February 15, 1994): 5706–9. http://dx.doi.org/10.1103/physrevb.49.5706.
Повний текст джерелаSteele, A. G., and Edward C. Lightowlers. "Photoluminescence Excitation Spectroscopy of Donors in Ge." Materials Science Forum 65-66 (January 1991): 217–22. http://dx.doi.org/10.4028/www.scientific.net/msf.65-66.217.
Повний текст джерелаHorner, G. S., A. Mascarenhas, S. Froyen, R. G. Alonso, K. Bertness, and J. M. Olson. "Photoluminescence-excitation-spectroscopy studies in spontaneously orderedGaInP2." Physical Review B 47, no. 7 (February 15, 1993): 4041–43. http://dx.doi.org/10.1103/physrevb.47.4041.
Повний текст джерелаRoura, P., G. Guillot, T. Benyattou, and W. Ulrici. "Photoluminescence excitation spectroscopy of Ti3+in GaP." Semiconductor Science and Technology 6, no. 1 (January 1, 1991): 36–40. http://dx.doi.org/10.1088/0268-1242/6/1/007.
Повний текст джерелаRistein, J., B. Hooper, S. Gu, and P. C. Taylor. "Excitation spectroscopy of photoluminescence in a-Si:H." Solar Cells 27, no. 1-4 (October 1989): 403–9. http://dx.doi.org/10.1016/0379-6787(89)90049-5.
Повний текст джерелаSiebentritt, Susanne, Niklas Papathanasiou, and Martha Lux-Steiner. "Photoluminescence excitation spectroscopy of highly compensated CuGaSe2." physica status solidi (b) 242, no. 13 (November 2005): 2627–32. http://dx.doi.org/10.1002/pssb.200541130.
Повний текст джерелаGupta, Santosh K., Hisham Abdou, Carlo U. Segre, and Yuanbing Mao. "Excitation-Dependent Photoluminescence of BaZrO3:Eu3+ Crystals." Nanomaterials 12, no. 17 (August 31, 2022): 3028. http://dx.doi.org/10.3390/nano12173028.
Повний текст джерелаReuter, E. E., R. Zhang, T. F. Kuech, and S. G. Bishop. "Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 363–68. http://dx.doi.org/10.1557/s1092578300002738.
Повний текст джерелаДисертації з теми "Photoluminescence Excitation Spectroscopy"
Legrand, Marie. "Advanced imaging of transient and spectral luminescence for optoelectronic characterization of photovoltaic materials." Electronic Thesis or Diss., Sorbonne université, 2023. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2023SORUS066.pdf.
Повний текст джерелаPhotoluminescence characterization of photovoltaic absorbers provides the charge transport phenomena and the optoelectronic properties on which their performance relies. However, their obtention is based on physical models and may require uncontrolled assumptions and unknown parameters. This thesis explores how acquiring spectrally resolved maps of photoluminescence in pulsed excitation can contribute to material characterization while limiting the necessary prior knowledge and controlling underlying hypotheses and models. On the one hand, we developed imaging systems describing the emitted intensity in four dimensions: 2D spatial, temporal and spectral. On the other hand, we performed excitation wavelength variation studies and investigated their relationship with light absorption. Maps of intensity can be acquired by pixelated detectors or non-imaging detectors, as in Single-pixel imaging. This approach employs spatial light modulation to reconstruct images and is particularly relevant to obtain multidimensional images. It is thus of interest for photoluminescence as each dimension brings information, as demonstrated by the setups already in use. A hyperspectral imager, providing the spectrum in each pixel, allows the characterization of material properties and the charge carriers generated. Complementarily, time-resolved imaging gives an insight into the transport mechanisms. We review and propose different techniques to obtain 4D data corresponding to the temporal evolution of the spectrum in each pixel of an image I_PL (x,y,energy,time). It provides the correlation between temporal and spectral dimensions, which was not available in the lab previously. Three measurement approaches were developed based on the principle of single-pixel imaging. They correspond to different sampling schemes in the 4D space, focusing on temporal and spectral dimensions that are reached with high resolutions. Their implementation was challenging as photoluminescence corresponds to low light conditions, and the higher the resolutions, the lower the sensitivity. Each dimension of light involved must be accurately reconstructed while entangled in the acquisition process. Particularly, the impact of diffraction and interferences due to the spatial light modulator has been investigated. This instrumental work allowed, first of all, combined time and spectrally resolved imaging (2x3D) of perovskite. It allowed monitoring of light-induced mechanisms that modify the photoluminescence spectrum and dynamics. Secondly, it has led to the characterization in 4D of the emission of a gallium arsenide wafer. The joint evolution of the signal in temporal, spatial, and spectral dimensions is observed due to band-filling and diffusion. At last, a workflow based on pixel clustering algorithms is proposed. A spatial map is obtained by single-pixel imaging, from which areas of interest are determined before the decay is obtained with high temporal and spectral resolutions. It allows an original sampling of photoluminescence with a high signal-to-noise ratio enabling its application to various samples and injection conditions. These last two approaches are unique to the best of our knowledge and provide photoluminescence variation in the combined spatial, temporal, and spectral domains. In addition, we have set up a methodology to perform excitation wavelength studies on the hyperspectral imager. It was demonstrated on an inhomogeneous perovskite sample from which the local relative absorptivity is obtained on a wide spectral range by combined analysis of the emission and excitation spectra. Reflectivity measurements completing this study provide optical and topological information allowing us to refine the interpretation of photoluminescence maps
Jaló, Daniel Jorge Pires. "Structural and optical characterization of Mg doped GaAs nanowires and the impact of the functionalization with Au nanoparticles." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/17415.
Повний текст джерелаGaAs, nanowires, nanotechnology, semiconductors, spectroscopy, photoluminescence, photoluminescence excitation, cathodoluminescence, Raman, nanoparticles, nanorods, functionalization, image charge effect.
O presente trabalho teve como objetivos principais: i) estudar o efeito da dopagem com Mg nas propriedades óticas e estruturais de nanofios de GaAs crescidos em substratos de Si(111); ii) avaliar as modificações nas propriedades óticas dos nanofios em resultado da funcionalização com nano varetas metálicas de ouro. No estudo foram utilizadas várias técnicas de caracterização: a microscopia eletrónica de varrimento, espetroscopia de Raman, fotoluminescência, excitação da fotoluminescência e catodoluminescência. Independentemente da concentração do dopante, os resultados experimentais da espetroscopia de Raman confirmaram a coexistência das fases de blenda de zinco (BZ) e de wurtzite (WZ) ao longo do eixo de crescimento dos nanofios. Espectroscopia de fotoluminescência revelou emissões abaixo da energia de hiato do GaAs na fase BZ. A natureza indireta das emissões, característica de um alinhamento tipo II das bandas eletrónicas da BZ e WZ, foi confirmada pela dependência da energia do máximo de emissão com a raiz cúbica da potência de excitação (P1/3). Os resultados experimentais da dependência da intensidade de PL com a potência revelaram que as emissões principais observadas são compatíveis com os modelos de recombinação de portadores free-to-bound ou a pares dador-aceitador na amostra menos dopada, e recombinações de excitões ligados a impurezas na amostra mais dopada. Os resultados de catodoluminescência, à temperatura ambiente, confirmaram a existência de diferentes emissões ao longo do eixo de crescimento dos fios, confirmando o politipismo estrutural. As emissões observadas em catodoluminescência concordam com as principais componentes identificadas em fotoluminescência. No estudo da fotoluminescência com a temperatura foram identificados diferentes canais de desexcitação não radiativa, cujos elevados valores de energias de ativação são consistentes com nanofios contendo segmentos muito finos de BZ. A funcionalização dos fios com nanovaretas metálicas de Au conduziu a um pequeno desvio para o azul na localização energética do máximo de emissão, mostrando que é possivel modificar as propriedades óticas dos nanofios de GaAs.
Posavec, Tony. "An Investigation into the Fluorescence of Polymers." University of Akron / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=akron1499353221343727.
Повний текст джерелаChastaingt, Bruno. "Spectroscopie d'hétérostructures ultra-minces appliquée à l'étude de l'interface GaAa/AlAs." Nice, 1993. http://www.theses.fr/1993NICE4694.
Повний текст джерелаSteveler, Émilie. "Etude des mécanismes de photoluminescence dans les nitrures et oxydes de silicium dopés aux terres rares (Er, Nd)." Thesis, Université de Lorraine, 2012. http://www.theses.fr/2012LORR0109/document.
Повний текст джерелаThis thesis is devoted to the study of radiative transitions in rare-earth (Er, Nd) doped silicon oxide and silicon nitride thin films. The optical characterization of thin films prepared by thermal evaporation is based on photoluminescence spectroscopy. In this work, we investigate indirect excitation processes of Er3+ and Nd3+ ions in silicon based materials. In silicon nitride and silicon oxinitride, an energy transfer leading to the indirect excitation of Er3+ ions is demonstrated. For amorphous samples, the sensitization of Er3+ ions is attributed to localized electronic states in the matrix bandgap. For samples annealed at high temperature, silicon nanocrystals play a major role in the indirect excitation of erbium. In silicon oxide thin films, we evidences that both direct and indirect excitation processes of Nd3+ ions occur. For amorphous samples, indirect excitation occurs thanks to localized electronic states in the matrix bandgap. For samples annealed at temperatures above 1000 °C, silicon nanocrystals are sensitizers of Nd3+ ions. Results suggest that indirect excitation thank to localized states in the matrix bandgap could be more efficient than indirect excitation thanks to silicon nanocrystals
Hsieh, Meng-hsueh, and 謝孟學. "Photoluminescence excitation spectroscopy on InGaN/GaN multiple quantum wells grown on silicon substrates." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/54874u.
Повний текст джерела國立中山大學
材料科學研究所
95
We study the optical properties of InGaN/GaN multiple quantum wells grown on silicon (111) substrate with different buffer layers. Because of the lattice mismatch and mismatch in thermal expansion coefficient, there exists stresses in the nitride sample grown on silicon substrates, which influence the growth properties and optical properties. A set of buffer layers was proposed in order to reduce the stress in our samples. The influence on optical properties is investigated in our work. In Raman spectra, we observed the characteristic phonon mode of GaN. According to the variation of E2 mode, the stress can be estimated. From our results, growing buffer layers can effectively reduce the stress in the sample. From temperature dependent and power dependent photoluminescence(PL) measurement, we found that appropriate buffer layers bring about less stress and better efficiency of luminescence. There are absorption of GaN and some vibrational behaviors in PLE spectra. According to the stokes shift calculated from temperature dependence PL and PLE spectra, we infer that the mechanism of recombination is not only carrier localization. The recombination is involved with the interaction of carriers and longitudinal optical phonons, and the stokes shift is independence on temperature.
Lu, Shi Shiang, and 呂世香. "The Electronic Structure of Semiconductor Microstructures: Its Calculation and Characterization by Photoluminescence Excitation Spectroscopy." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/44030362059539142714.
Повний текст джерелаKao, Chia-wei, and 高嘉維. "Surface photovoltage spectroscopy, photoluminescence, and photoluminescence excitation characterization of InAs/GaAs quantum dots structures with InxGa1-xAs over grown layer." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/4tw396.
Повний текст джерела國立臺灣科技大學
電子工程系
94
Surface photovoltage spectroscopy (SPS), photoluminescence (PL) and photoluminescence excitation (PLE) techniques have been used to characterize the self-assembled InAs/GaAs quantum dots (QDs) structures with and without InGaAs overgrown layers grown by solid source molecular beam epitaxy (SSMBE). Signals from barrier, wetting layer (WL), overgrown layer, ground state and excited states of the QDs have been observed and identified. The effects of the InGaAs overgrowth layer have been studied in detail. The information on the decomposition of the InGaAs layer has been obtained from the electronic transition properties of the quantum well (QW) formed by the InAs WL and the InGaAs layer. The effects of the InGaAs overgrowth layer have been studied in detail. The observed reduction in the energy splitting in the energy splitting of the heave- and light-hole in the wetting layer indicate a partial strain relaxation due to the InGaAs overgrown layer. The red shifts of the ground state and excited states transition energies of QDs have been attributed to the altered strain distribution and increase of QD size. The optical properties of the InAs QDs, WL, QW, and GaAs were studied with the fitting parameters using Varshni’s equation. The SPS has been shown to be a complementary technique to PL and PLE, and can be used for nondestructive characterization of self-assembled QDs structures.
Das, Sarthak. "Tailoring excitonic complexes in layered materials." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5747.
Повний текст джерелаWilson, Mark. "Investigations into the Optical Properties of Individual, Air-Suspended, Single-Walled Carbon Nanotubes." Thesis, 2008. http://hdl.handle.net/1974/1485.
Повний текст джерелаThesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2008-09-26 16:23:40.81
Частини книг з теми "Photoluminescence Excitation Spectroscopy"
HAEGEL, NANCY M., and LEI WANG. "PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF POROUS SILICON." In Porous Silicon, 219–33. WORLD SCIENTIFIC, 1994. http://dx.doi.org/10.1142/9789812812995_0011.
Повний текст джерелаW. Kenney III, John, Joshua Jacobsen, Amanda Renfro, Isaac Muñoz, and Ruth Christian. "Time-Dependent Photoluminescence and Photoluminescence Excitation in Exciton Systems and Related Phenomena." In Quantum Field Theory [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.106888.
Повний текст джерелаHenderson, B., and G. F. Imbusch. "Experimental techniques." In Optical Spectroscopy of Inorganic Solids, 258–314. Oxford University PressOxford, 2006. http://dx.doi.org/10.1093/oso/9780199298624.003.0006.
Повний текст джерелаТези доповідей конференцій з теми "Photoluminescence Excitation Spectroscopy"
Brackmann, Stefan, Srumika Konde, Katharina Gejer, Marina Gerhard, and Martin Koch. "The right excitation wavelength for microplastics detection via photoluminescence." In Applied Industrial Spectroscopy. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/ais.2023.am2a.5.
Повний текст джерелаDeLong, M. C., R. A. Hogg, D. J. Mowbray, M. Hopkinson, M. S. Skolnick, P. C. Taylor, J. M. Olson, Sarah R. Kurtz, and A. E. Kibbler. "Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P." In Photovoltaic advanced research and development project. AIP, 1992. http://dx.doi.org/10.1063/1.42885.
Повний текст джерелаKeitel, Robert C., Felipe V. Antolinez, Stefan Meyer, Raphael Brechbühler, Maria del Henar Rojo Sanz, and David J. Norris. "Photoluminescence Excitation Spectroscopy on Individual Quantum Emitters." In Internet Conference for Quantum Dots. València: Fundació Scito, 2020. http://dx.doi.org/10.29363/nanoge.icqd.2020.046.
Повний текст джерелаRakovich, Yury, Laura Walsh, Louise Bradley, John F. Donegan, Dmitri Talapin, Andrey Rogach, and Alexander Eychmueller. "Size-selective photoluminescence excitation spectroscopy in CdTe quantum dots." In OPTO Ireland, edited by Thomas J. Glynn. SPIE, 2003. http://dx.doi.org/10.1117/12.463693.
Повний текст джерелаMoore, James E., Xufeng Wang, Elizabeth K. Grubbs, Jennifer Drayton, Steve Johnston, Dean Levi, Mark S. Lundstrom, and Peter Bermel. "Photoluminescence excitation spectroscopy characterization of cadmium telluride solar cells." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7750030.
Повний текст джерелаJackson, M. K., M. B. Johnson, D. H. Chow, J. Soderstrom, T. C. McGill, and C. W. Nieh. "Electron Tunneling Time Measured by Photoluminescence Excitation Correlation Spectroscopy." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.trt124.
Повний текст джерелаJagrati, Akshay Kumar, Shalendra Kumar, Ravi Kumar, and Ankush Vij. "Photoluminescence emission and excitation spectroscopy of Bi doped SrS nanophosphors." In NATIONAL CONFERENCE ON RECENT ADVANCES IN EXPERIMENTAL AND THEORETICAL PHYSICS (RAETP-2018). Author(s), 2018. http://dx.doi.org/10.1063/1.5051277.
Повний текст джерелаFischer, Moritz, Ali Sajid, Alexander Hötger, Kristian S. Thygesen, Sanshui Xiao, Martijn Wubs, Alexander Holleitner, and Nicolas Stenger. "Low-temperature spectroscopy of single-photon emitters in irradiation-engineered hexagonal boron nitride." In Conference on Lasers and Electro-Optics/Pacific Rim. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleopr.2022.ctua7a_03.
Повний текст джерелаChoksy, D. J., E. A. Szwed, L. V. Butov, K. W. Baldwin, and L. N. Pfeiffer. "Fermi edge singularity in photoluminescence excitation spectra of neutral ultracold electron-hole system." In CLEO: Fundamental Science. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_fs.2023.fw3n.8.
Повний текст джерелаBONDARENKO, V., N. KAZUCHITS, M. BALUCANI, and A. FERRARI. "PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF ERBIUM INCORPORATED WITH IRON IN OXIDIZED POROUS SILICON." In Physics, Chemistry and Application of Nanostructures - Reviews and Short Notes to Nanomeeting 2003. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812796738_0061.
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