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Статті в журналах з теми "Photogating"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Shin, Jihyun, and Hocheon Yoo. "Photogating Effect-Driven Photodetectors and Their Emerging Applications." Nanomaterials 13, no. 5 (February 26, 2023): 882. http://dx.doi.org/10.3390/nano13050882.

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Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.

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2

Marcus, Matthew S., J. M. Simmons, O. M. Castellini, R. J. Hamers, and M. A. Eriksson. "Photogating carbon nanotube transistors." Journal of Applied Physics 100, no. 8 (October 15, 2006): 084306. http://dx.doi.org/10.1063/1.2357413.

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3

Bae, Sanghoon, and Stephen J. Fonash. "Impact of structure on photogating." Journal of Applied Physics 79, no. 5 (March 1996): 2213–20. http://dx.doi.org/10.1063/1.361185.

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4

Fang, Hehai, and Weida Hu. "Photogating in Low Dimensional Photodetectors." Advanced Science 4, no. 12 (October 4, 2017): 1700323. http://dx.doi.org/10.1002/advs.201700323.

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5

Qi, Zhaoyang, Tiefeng Yang, Dong Li, Honglai Li, Xiao Wang, Xuehong Zhang, Fang Li, et al. "High-responsivity two-dimensional p-PbI2/n-WS2 vertical heterostructure photodetectors enhanced by photogating effect." Materials Horizons 6, no. 7 (2019): 1474–80. http://dx.doi.org/10.1039/c9mh00335e.

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6

Zhang, Ke, Mingzeng Peng, Aifang Yu, Youjun Fan, Junyi Zhai, and Zhong Lin Wang. "A substrate-enhanced MoS2 photodetector through a dual-photogating effect." Materials Horizons 6, no. 4 (2019): 826–33. http://dx.doi.org/10.1039/c8mh01429a.

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7

Ting, Lei, Lü Wei-Ming, Lü Wen-Xing, Cui Bo-Yao, Hu Rui, Shi Wen-Hua, and Zeng Zhong-Ming. "Photogating effect in two-dimensional photodetectors." Acta Physica Sinica 70, no. 2 (2021): 027801. http://dx.doi.org/10.7498/aps.70.20201325.

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8

Ting, Lei, Lü Wei-Ming, Lü Wen-Xing, Cui Bo-Yao, Hu Rui, Shi Wen-Hua, and Zeng Zhong-Ming. "Photogating effect in two-dimensional photodetectors." Acta Physica Sinica 70, no. 2 (2021): 027801. http://dx.doi.org/10.7498/aps.70.20201325.

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9

Han, Yuxiang, Xiao Zheng, Mengqi Fu, Dong Pan, Xing Li, Yao Guo, Jianhua Zhao, and Qing Chen. "Negative photoconductivity of InAs nanowires." Physical Chemistry Chemical Physics 18, no. 2 (2016): 818–26. http://dx.doi.org/10.1039/c5cp06139c.

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10

Jeddi, Hossein, Mohammad Karimi, Bernd Witzigmann, Xulu Zeng, Lukas Hrachowina, Magnus T. Borgström, and Håkan Pettersson. "Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs." Nanoscale 13, no. 12 (2021): 6227–33. http://dx.doi.org/10.1039/d1nr00846c.

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Анотація:

We report on experimental results and advanced self-consistent simulations revealing a non-linear optical response, resulting from a trap-induced photogating mechanism, observed in InP nanowire array photoconductors with embedded InAsP quantum discs.

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11

Miller, Bastian, Eric Parzinger, Anna Vernickel, Alexander W. Holleitner, and Ursula Wurstbauer. "Photogating of mono- and few-layer MoS2." Applied Physics Letters 106, no. 12 (March 23, 2015): 122103. http://dx.doi.org/10.1063/1.4916517.

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12

Han, Peize, Eli R. Adler, Yijing Liu, Luke St Marie, Abdel El Fatimy, Scott Melis, Edward Van Keuren, and Paola Barbara. "Ambient effects on photogating in MoS2 photodetectors." Nanotechnology 30, no. 28 (April 24, 2019): 284004. http://dx.doi.org/10.1088/1361-6528/ab149e.

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13

Jiang, Hao, Changbin Nie, Jintao Fu, Linlong Tang, Jun Shen, Feiying Sun, Jiuxun Sun, et al. "Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect." Nanophotonics 9, no. 11 (June 29, 2020): 3663–72. http://dx.doi.org/10.1515/nanoph-2020-0261.

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Анотація:

AbstractThe hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of 90 µs were obtained. The specific detectivity D* was measured to be 1.46 ⨯ 1013 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

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14

Wang, Yifei, Vinh X. Ho, Prashant Pradhan, Michael P. Cooney, and Nguyen Q. Vinh. "Interfacial Photogating Effect for Hybrid Graphene-Based Photodetectors." ACS Applied Nano Materials 4, no. 8 (August 11, 2021): 8539–45. http://dx.doi.org/10.1021/acsanm.1c01931.

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15

Yang, Yajie, Jinshu Li, Seunghyuk Choi, Sumin Jeon, Jeong Ho Cho, Byoung Hun Lee, and Sungjoo Lee. "High-responsivity PtSe2 photodetector enhanced by photogating effect." Applied Physics Letters 118, no. 1 (January 4, 2021): 013103. http://dx.doi.org/10.1063/5.0025884.

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16

Tsai, Tsung-Han, Zheng-Yong Liang, Yung-Chang Lin, Cheng-Chieh Wang, Kuang-I. Lin, Kazu Suenaga, and Po-Wen Chiu. "Photogating WS2 Photodetectors Using Embedded WSe2 Charge Puddles." ACS Nano 14, no. 4 (April 9, 2020): 4559–66. http://dx.doi.org/10.1021/acsnano.0c00098.

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17

Lee, Youngbin, Hyunmin Kim, Soo Kim, Dongmok Whang, and Jeong Ho Cho. "Photogating in the Graphene–Dye–Graphene Sandwich Heterostructure." ACS Applied Materials & Interfaces 11, no. 26 (May 28, 2019): 23474–81. http://dx.doi.org/10.1021/acsami.9b05280.

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18

Drain, C. M., B. Christensen, and D. Mauzerall. "Photogating of ionic currents across a lipid bilayer." Proceedings of the National Academy of Sciences 86, no. 18 (September 1, 1989): 6959–62. http://dx.doi.org/10.1073/pnas.86.18.6959.

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19

Shimatani, Masaaki, Naoki Yamada, Shoichiro Fukushima, Satoshi Okuda, Shinpei Ogawa, Takashi Ikuta, and Kenzo Maehashi. "High-responsivity turbostratic stacked graphene photodetectors using enhanced photogating." Applied Physics Express 12, no. 12 (November 12, 2019): 122010. http://dx.doi.org/10.7567/1882-0786/ab5096.

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20

Garcia, C., N. R. Pradhan, D. Rhodes, L. Balicas, and S. A. McGill. "Photogating and high gain in ReS2 field-effect transistors." Journal of Applied Physics 124, no. 20 (November 28, 2018): 204306. http://dx.doi.org/10.1063/1.5050821.

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21

Kundu, Anirban, Renu Rani, Mamta Raturi, and Kiran Shankar Hazra. "Photogating-Induced Controlled Electrical Response in 2D Black Phosphorus." ACS Applied Electronic Materials 2, no. 11 (November 14, 2020): 3562–70. http://dx.doi.org/10.1021/acsaelm.0c00592.

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22

G, Harikrishnan, Sesha Vempati, K. N. Prajapati, K. Bandopadhyay, Vijith Kalathingal, and J. Mitra. "Negative photoresponse in ZnO–PEDOT:PSS nanocomposites and photogating effects." Nanoscale Advances 1, no. 6 (2019): 2435–43. http://dx.doi.org/10.1039/c9na00116f.

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Анотація:

Reversible negative photoresponse or increase in resistance in nanocomposites of ZnO nanoparticles in a p-type polymer (PEDOT:PSS), under UV-Vis illumination is reported, contrary to that of planar heterojunction of the constituents.

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23

Tang, Xingyu, Yixuan Huang, Keming Cheng, Qi Yuan, Jihua Zou, Chuang Li, Aobo Ren, Kai Shen, and Zhiming Wang. "Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect." Microelectronic Engineering 274 (April 2023): 111980. http://dx.doi.org/10.1016/j.mee.2023.111980.

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24

Lee, Kuo-Chih, Yu-Hsien Chuang, Chen-Kai Huang, Hui Li, Guo-En Chang, Kuan-Ming Hung, and Hung Hsiang Cheng. "Photoresponse of Graphene Channel in Graphene-Oxide–Silicon Photodetectors." Photonics 10, no. 5 (May 12, 2023): 568. http://dx.doi.org/10.3390/photonics10050568.

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Graphene-on-silicon photodetectors exhibit broadband detection capabilities with high responsivities, surpassing those of their counterpart semiconductors fabricated purely using graphene or Si. In these studies, graphene channels were considered electrically neutral, and signal amplification was typically attributed to the photogating effect. By contrast, herein, we show graphene channels to exhibit p-type characteristics using a structure wherein a thin oxide layer insulated the graphene from Si. The p-type carrier concentration is higher (six-times) than the photoaging-induced carrier concentration and dominates the photocurrent. Additionally, we demonstrate photocurrent tunability in the channel. By operating this device under a back-gated bias, photocurrent tuning is realized with not only amplification but also attenuation. Gate amplification produces a current equal to the photogating current at a low bias (0.2 V), and it is approximately two orders of magnitude larger at a bias of 2 V, indicating the operation effectiveness. Meanwhile, photocurrent attenuation enables adjustments in the detector output for compatibility with read-out circuits. A quantification model of gate-dependent currents is further established based on the simulation model used for metal–oxide–semiconductor devices. Thus, this study addresses fundamental issues concerning graphene channels and highlights the potential of such devices as gate-tunable photodetectors in high-performance optoelectronics.

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25

Rubinelli, F. A. "Complementary photogating effect in microcrystalline silicon n-i-p structures." Thin Solid Films 619 (November 2016): 102–11. http://dx.doi.org/10.1016/j.tsf.2016.10.038.

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26

Fukushima, Shoichiro, Masaaki Shimatani, Satoshi Okuda, Shinpei Ogawa, Yasushi Kanai, Takao Ono, Koichi Inoue, and Kazuhiko Matsumoto. "Photogating for small high-responsivity graphene middle-wavelength infrared photodetectors." Optical Engineering 59, no. 03 (March 18, 2020): 1. http://dx.doi.org/10.1117/1.oe.59.3.037101.

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27

Hojun, Seong, Cho Kyoungah, Yun Junggwon, Kwak Kiyeol, Jun Jin Hyung, and Kim Sangsig. "Photogating effects of HgTe nanoparticles on a single ZnO nanowire." Solid State Sciences 12, no. 8 (August 2010): 1328–31. http://dx.doi.org/10.1016/j.solidstatesciences.2010.04.034.

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28

Kim, Ho Jin, Khang June Lee, Junghoon Park, Gwang Hyuk Shin, Hamin Park, Kyoungsik Yu, and Sung-Yool Choi. "Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating." ACS Applied Materials & Interfaces 12, no. 34 (July 28, 2020): 38563–69. http://dx.doi.org/10.1021/acsami.0c09960.

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29

Guan, Xinwei, Zhenwei Wang, Mrinal K. Hota, Husam N. Alshareef, and Tom Wu. "P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating." Advanced Electronic Materials 5, no. 1 (September 27, 2018): 1800538. http://dx.doi.org/10.1002/aelm.201800538.

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30

Li, Xiangyang, Shuangchen Ruan, and Haiou Zhu. "SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse." Nanomaterials 12, no. 16 (August 13, 2022): 2777. http://dx.doi.org/10.3390/nano12162777.

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Анотація:

High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW−1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.

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31

Huang, Hai, Jianlu Wang, Weida Hu, Lei Liao, Peng Wang, Xudong Wang, Fan Gong, et al. "Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect." Nanotechnology 27, no. 44 (September 27, 2016): 445201. http://dx.doi.org/10.1088/0957-4484/27/44/445201.

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32

Wang, Yang, Fang Zhong, Hailu Wang, Hao Huang, Qing Li, Jiafu Ye, Meng Peng, et al. "Photogating-controlled ZnO photodetector response for visible to near-infrared light." Nanotechnology 31, no. 33 (June 8, 2020): 335204. http://dx.doi.org/10.1088/1361-6528/ab8e75.

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33

Di Bartolomeo, Antonio, Francesca Urban, Enver Faella, Alessandro Grillo, Aniello Pelella, Filippo Giubileo, Niall McEvoy, Farzan Gity, and Paul Kennedy Hurley. "Electrical Conduction and Photoconduction in PtSe2 Ultrathin Films." Materials Proceedings 4, no. 1 (November 10, 2020): 28. http://dx.doi.org/10.3390/iocn2020-07814.

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We report the characterization of back-gated field-effect transistors fabricated using platinum diselenide () ultrathin films as a channel. We perform a detailed study of the electrical conduction as well as of the photoconductivity. From the gate modulation of the channel current, we obtain the signature of p-type semiconducting conduction with carrier mobility of about 30 cm2 V−1 s−1. More interestingly, devices exposed to light, either in air and in vacuum, exhibit negative photoconductivity, which we explain by a photogating effect due to charge trapping in the gate dielectric and light-induced desorption of adsorbates.

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34

Tang, Hongyu, Sergey G. Menabde, Tarique Anwar, Junhyung Kim, Min Seok Jang, and Giulia Tagliabue. "Photo-modulated optical and electrical properties of graphene." Nanophotonics 11, no. 5 (January 14, 2022): 917–40. http://dx.doi.org/10.1515/nanoph-2021-0582.

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Abstract Photo-modulation is a promising strategy for contactless and ultrafast control of optical and electrical properties of photoactive materials. Graphene is an attractive candidate material for photo-modulation due to its extraordinary physical properties and its relevance to a wide range of devices, from photodetectors to energy converters. In this review, we survey different strategies for photo-modulation of electrical and optical properties of graphene, including photogating, generation of hot carriers, and thermo-optical effects. We briefly discuss the role of nanophotonic strategies to maximize these effects and highlight promising fields for application of these techniques.

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35

Hu, H. J., W. L. Zhen, S. R. Weng, Y. D. Li, R. Niu, Z. L. Yue, F. Xu, L. Pi, C. J. Zhang, and W. K. Zhu. "Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires." Applied Physics Letters 120, no. 20 (May 16, 2022): 201101. http://dx.doi.org/10.1063/5.0080334.

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Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional research. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here, we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 [Formula: see text] 104 A W−1), specific detectivity (2.5 [Formula: see text] 1014 Jones), and external quantum efficiency (1.8 [Formula: see text] 107%) when Vds = 3 V, [Formula: see text] = 515 nm, and P = 0.01 mW cm−2. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.

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36

Jiang, Hao, Jingxuan Wei, Feiying Sun, Changbin Nie, Jintao Fu, Haofei Shi, Jiuxun Sun, Xingzhan Wei, and Cheng-Wei Qiu. "Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering." ACS Nano 16, no. 3 (February 22, 2022): 4458–66. http://dx.doi.org/10.1021/acsnano.1c10795.

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37

Gao, Kaicong, Shuling Ran, Qin Han, Qi Yang, Hao Jiang, Jintao Fu, Chongqian Leng, et al. "High zero-bias responsivity induced by photogating effect in asymmetric device structure." Optical Materials 124 (February 2022): 112013. http://dx.doi.org/10.1016/j.optmat.2022.112013.

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38

Schropp, Ruud E. I., and Francisco A. Rubinelli. "Photogating effect as a defect probe in hydrogenated nanocrystalline silicon solar cells." Journal of Applied Physics 108, no. 1 (July 2010): 014509. http://dx.doi.org/10.1063/1.3437393.

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39

Greene, Brandon L., Gregory E. Vansuch, Bryant C. Chica, Michael W. W. Adams, and R. Brian Dyer. "Applications of Photogating and Time Resolved Spectroscopy to Mechanistic Studies of Hydrogenases." Accounts of Chemical Research 50, no. 11 (October 30, 2017): 2718–26. http://dx.doi.org/10.1021/acs.accounts.7b00356.

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40

Luo, Fang, Mengjian Zhu, Yuan tan, Honghui Sun, Wei Luo, Gang Peng, Zhihong Zhu, Xue-Ao Zhang, and Shiqiao Qin. "High responsivity graphene photodetectors from visible to near-infrared by photogating effect." AIP Advances 8, no. 11 (November 2018): 115106. http://dx.doi.org/10.1063/1.5054760.

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41

Park, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.

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Анотація:

The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488–1550 nm).

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42

Abderrahmane, Abdelkader, Pan-Gum Jung, Changlim Woo, and Pil Ju Ko. "Effect of Gate Dielectric Material on the Electrical Properties of MoSe2-Based Metal–Insulator–Semiconductor Field-Effect Transistor." Crystals 12, no. 9 (September 14, 2022): 1301. http://dx.doi.org/10.3390/cryst12091301.

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Анотація:

In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphological and electrical characterizations in which the devices showed good electronic performance, such as high mobility and high Ion/Ioff ratios exceeding 104. The subthreshold swing (ss) was somewhat high in all devices owing to the dimensions of our devices. In addition, the transfer curves showed good controllability as a function of gate voltage. The photogating effect was weakened in MoSe2/SiN/Si, indicating that SiN is a good alternative to silicon oxide as a gate dielectric material.

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43

Xie, An, Yuxian Jian, Zichao Cheng, Yu Gu, Zhanyang Chen, Xiufeng Song, and Zaixing Yang. "High responsivity of hybrid MoTe₂/perovskite heterojunction photodetectors." Journal of Physics: Condensed Matter 34, no. 15 (February 10, 2022): 154007. http://dx.doi.org/10.1088/1361-648x/ac4f1b.

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Abstract Two-dimensional (2D) van der Waals heterojunction offers alternative facile platforms for many optoelectronic devices due to no-dangling bonds and steep interface carrier gradient. Here, we demonstrate a 2D heterojunction device, which combines the benefits of high carrier mobility of 2D MoTe2 and strong light absorption of perovskite, to achieve excellent responsivity. This device architecture is constructed based on the charge carriers separation and transfer with the high-gain photogating effect at the interface of the heterojunction. The device exhibits high responsivity of 334.6 A W−1, impressive detectivity of 6.2 × 1010 Jones. All the results provide the insight into the benefits of interfacial carriers transfer for designing hybrid perovskite-2D materials based optoelectronic devices.

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44

Feng, Guangdi, Jie Jiang, Yanran Li, Dingdong Xie, Bobo Tian, and Qing Wan. "Flexible Vertical Photogating Transistor Network with an Ultrashort Channel for In‐Sensor Visual Nociceptor." Advanced Functional Materials 31, no. 36 (June 24, 2021): 2104327. http://dx.doi.org/10.1002/adfm.202104327.

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45

Lee, Hee Sung, Kwang H. Lee, Youn-Gyoung Chang, Syed Raza Ali Raza, Seongil Im, Dong-Ho Kim, Hye-Ri Kim, and Gun-Hwan Lee. "Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode." Applied Physics Letters 98, no. 22 (May 30, 2011): 223505. http://dx.doi.org/10.1063/1.3598396.

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46

Joshi, Swati, Prabhat Kumar Dubey, and Brajesh Kumar Kaushik. "Photosensor Based on Split Gate TMD TFET Using Photogating Effect for Visible Light Detection." IEEE Sensors Journal 20, no. 12 (June 15, 2020): 6346–53. http://dx.doi.org/10.1109/jsen.2020.2966728.

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47

Yamamoto, Mahito, Keiji Ueno, and Kazuhito Tsukagoshi. "Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer." Applied Physics Letters 112, no. 18 (April 30, 2018): 181902. http://dx.doi.org/10.1063/1.5030525.

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48

Shen, Tien‐Lin, Yu‐Wei Chu, Yu‐Kuang Liao, Wen‐Ya Lee, Hao‐Chung Kuo, Tai‐Yuan Lin, and Yang‐Fang Chen. "Ultrahigh‐Performance Self‐Powered Flexible Photodetector Driven from Photogating, Piezo‐Phototronic, and Ferroelectric Effects." Advanced Optical Materials 8, no. 1 (November 26, 2019): 1901334. http://dx.doi.org/10.1002/adom.201901334.

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49

Ge, Bangtong, Changbin Nie, and Jun Shen. "A hybrid photodetector of graphene/TiO₂/inorganic PbS quantum dots for fast response." Japanese Journal of Applied Physics 61, no. 4 (March 17, 2022): 040903. http://dx.doi.org/10.35848/1347-4065/ac56fc.

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Abstract Hybrid graphene/quantum dots photodetectors have been obtained up to 109 A W−1 ultrahigh responsivity, but the major challenge of these architectures is the slow photoresponse speed, especially the delay time of these configurations is mostly on the second time scale. Herein, we propose a hybrid photodetector of graphene/TiO2 films/inorganic PbS quantum dots, which bridge the gap between high sensitivity and fast response time at visible band detection. Under 635 nm light illumination, the device shows a high responsivity of 1.2 × 104 A W−1, a fast decay time of 35 ms, and a specific detectivity of 1.5 × 1012 Jones at 1 V bias. The high responsivity is ascribed to the photogating effect, and the major findings hold great promise for application in optoelectronics.

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50

Zhu, Yiyue, Wen Huang, Yifei He, Lei Yin, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. "Perovskite-Enhanced Silicon-Nanocrystal Optoelectronic Synaptic Devices for the Simulation of Biased and Correlated Random-Walk Learning." Research 2020 (September 2, 2020): 1–9. http://dx.doi.org/10.34133/2020/7538450.

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Silicon- (Si-) based optoelectronic synaptic devices mimicking biological synaptic functionalities may be critical to the development of large-scale integrated optoelectronic artificial neural networks. As a type of important Si materials, Si nanocrystals (NCs) have been successfully employed to fabricate optoelectronic synaptic devices. In this work, organometal halide perovskite with excellent optical asborption is employed to improve the performance of optically stimulated Si-NC-based optoelectronic synaptic devices. The improvement is evidenced by the increased optical sensitivity and decreased electrical energy consumption of the devices. It is found that the current simulation of biological synaptic plasticity is essentially enabled by photogating, which is based on the heterojuction between Si NCs and organometal halide perovskite. By using the synaptic plasticity, we have simulated the well-known biased and correlated random-walk (BCRW) learning.

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