Статті в журналах з теми "Photogating"
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Shin, Jihyun, and Hocheon Yoo. "Photogating Effect-Driven Photodetectors and Their Emerging Applications." Nanomaterials 13, no. 5 (February 26, 2023): 882. http://dx.doi.org/10.3390/nano13050882.
Повний текст джерелаMarcus, Matthew S., J. M. Simmons, O. M. Castellini, R. J. Hamers, and M. A. Eriksson. "Photogating carbon nanotube transistors." Journal of Applied Physics 100, no. 8 (October 15, 2006): 084306. http://dx.doi.org/10.1063/1.2357413.
Повний текст джерелаBae, Sanghoon, and Stephen J. Fonash. "Impact of structure on photogating." Journal of Applied Physics 79, no. 5 (March 1996): 2213–20. http://dx.doi.org/10.1063/1.361185.
Повний текст джерелаFang, Hehai, and Weida Hu. "Photogating in Low Dimensional Photodetectors." Advanced Science 4, no. 12 (October 4, 2017): 1700323. http://dx.doi.org/10.1002/advs.201700323.
Повний текст джерелаQi, Zhaoyang, Tiefeng Yang, Dong Li, Honglai Li, Xiao Wang, Xuehong Zhang, Fang Li, et al. "High-responsivity two-dimensional p-PbI2/n-WS2 vertical heterostructure photodetectors enhanced by photogating effect." Materials Horizons 6, no. 7 (2019): 1474–80. http://dx.doi.org/10.1039/c9mh00335e.
Повний текст джерелаZhang, Ke, Mingzeng Peng, Aifang Yu, Youjun Fan, Junyi Zhai, and Zhong Lin Wang. "A substrate-enhanced MoS2 photodetector through a dual-photogating effect." Materials Horizons 6, no. 4 (2019): 826–33. http://dx.doi.org/10.1039/c8mh01429a.
Повний текст джерелаTing, Lei, Lü Wei-Ming, Lü Wen-Xing, Cui Bo-Yao, Hu Rui, Shi Wen-Hua, and Zeng Zhong-Ming. "Photogating effect in two-dimensional photodetectors." Acta Physica Sinica 70, no. 2 (2021): 027801. http://dx.doi.org/10.7498/aps.70.20201325.
Повний текст джерелаTing, Lei, Lü Wei-Ming, Lü Wen-Xing, Cui Bo-Yao, Hu Rui, Shi Wen-Hua, and Zeng Zhong-Ming. "Photogating effect in two-dimensional photodetectors." Acta Physica Sinica 70, no. 2 (2021): 027801. http://dx.doi.org/10.7498/aps.70.20201325.
Повний текст джерелаHan, Yuxiang, Xiao Zheng, Mengqi Fu, Dong Pan, Xing Li, Yao Guo, Jianhua Zhao, and Qing Chen. "Negative photoconductivity of InAs nanowires." Physical Chemistry Chemical Physics 18, no. 2 (2016): 818–26. http://dx.doi.org/10.1039/c5cp06139c.
Повний текст джерелаJeddi, Hossein, Mohammad Karimi, Bernd Witzigmann, Xulu Zeng, Lukas Hrachowina, Magnus T. Borgström, and Håkan Pettersson. "Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs." Nanoscale 13, no. 12 (2021): 6227–33. http://dx.doi.org/10.1039/d1nr00846c.
Повний текст джерелаMiller, Bastian, Eric Parzinger, Anna Vernickel, Alexander W. Holleitner, and Ursula Wurstbauer. "Photogating of mono- and few-layer MoS2." Applied Physics Letters 106, no. 12 (March 23, 2015): 122103. http://dx.doi.org/10.1063/1.4916517.
Повний текст джерелаHan, Peize, Eli R. Adler, Yijing Liu, Luke St Marie, Abdel El Fatimy, Scott Melis, Edward Van Keuren, and Paola Barbara. "Ambient effects on photogating in MoS2 photodetectors." Nanotechnology 30, no. 28 (April 24, 2019): 284004. http://dx.doi.org/10.1088/1361-6528/ab149e.
Повний текст джерелаJiang, Hao, Changbin Nie, Jintao Fu, Linlong Tang, Jun Shen, Feiying Sun, Jiuxun Sun, et al. "Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect." Nanophotonics 9, no. 11 (June 29, 2020): 3663–72. http://dx.doi.org/10.1515/nanoph-2020-0261.
Повний текст джерелаWang, Yifei, Vinh X. Ho, Prashant Pradhan, Michael P. Cooney, and Nguyen Q. Vinh. "Interfacial Photogating Effect for Hybrid Graphene-Based Photodetectors." ACS Applied Nano Materials 4, no. 8 (August 11, 2021): 8539–45. http://dx.doi.org/10.1021/acsanm.1c01931.
Повний текст джерелаYang, Yajie, Jinshu Li, Seunghyuk Choi, Sumin Jeon, Jeong Ho Cho, Byoung Hun Lee, and Sungjoo Lee. "High-responsivity PtSe2 photodetector enhanced by photogating effect." Applied Physics Letters 118, no. 1 (January 4, 2021): 013103. http://dx.doi.org/10.1063/5.0025884.
Повний текст джерелаTsai, Tsung-Han, Zheng-Yong Liang, Yung-Chang Lin, Cheng-Chieh Wang, Kuang-I. Lin, Kazu Suenaga, and Po-Wen Chiu. "Photogating WS2 Photodetectors Using Embedded WSe2 Charge Puddles." ACS Nano 14, no. 4 (April 9, 2020): 4559–66. http://dx.doi.org/10.1021/acsnano.0c00098.
Повний текст джерелаLee, Youngbin, Hyunmin Kim, Soo Kim, Dongmok Whang, and Jeong Ho Cho. "Photogating in the Graphene–Dye–Graphene Sandwich Heterostructure." ACS Applied Materials & Interfaces 11, no. 26 (May 28, 2019): 23474–81. http://dx.doi.org/10.1021/acsami.9b05280.
Повний текст джерелаDrain, C. M., B. Christensen, and D. Mauzerall. "Photogating of ionic currents across a lipid bilayer." Proceedings of the National Academy of Sciences 86, no. 18 (September 1, 1989): 6959–62. http://dx.doi.org/10.1073/pnas.86.18.6959.
Повний текст джерелаShimatani, Masaaki, Naoki Yamada, Shoichiro Fukushima, Satoshi Okuda, Shinpei Ogawa, Takashi Ikuta, and Kenzo Maehashi. "High-responsivity turbostratic stacked graphene photodetectors using enhanced photogating." Applied Physics Express 12, no. 12 (November 12, 2019): 122010. http://dx.doi.org/10.7567/1882-0786/ab5096.
Повний текст джерелаGarcia, C., N. R. Pradhan, D. Rhodes, L. Balicas, and S. A. McGill. "Photogating and high gain in ReS2 field-effect transistors." Journal of Applied Physics 124, no. 20 (November 28, 2018): 204306. http://dx.doi.org/10.1063/1.5050821.
Повний текст джерелаKundu, Anirban, Renu Rani, Mamta Raturi, and Kiran Shankar Hazra. "Photogating-Induced Controlled Electrical Response in 2D Black Phosphorus." ACS Applied Electronic Materials 2, no. 11 (November 14, 2020): 3562–70. http://dx.doi.org/10.1021/acsaelm.0c00592.
Повний текст джерелаG, Harikrishnan, Sesha Vempati, K. N. Prajapati, K. Bandopadhyay, Vijith Kalathingal, and J. Mitra. "Negative photoresponse in ZnO–PEDOT:PSS nanocomposites and photogating effects." Nanoscale Advances 1, no. 6 (2019): 2435–43. http://dx.doi.org/10.1039/c9na00116f.
Повний текст джерелаTang, Xingyu, Yixuan Huang, Keming Cheng, Qi Yuan, Jihua Zou, Chuang Li, Aobo Ren, Kai Shen, and Zhiming Wang. "Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect." Microelectronic Engineering 274 (April 2023): 111980. http://dx.doi.org/10.1016/j.mee.2023.111980.
Повний текст джерелаLee, Kuo-Chih, Yu-Hsien Chuang, Chen-Kai Huang, Hui Li, Guo-En Chang, Kuan-Ming Hung, and Hung Hsiang Cheng. "Photoresponse of Graphene Channel in Graphene-Oxide–Silicon Photodetectors." Photonics 10, no. 5 (May 12, 2023): 568. http://dx.doi.org/10.3390/photonics10050568.
Повний текст джерелаRubinelli, F. A. "Complementary photogating effect in microcrystalline silicon n-i-p structures." Thin Solid Films 619 (November 2016): 102–11. http://dx.doi.org/10.1016/j.tsf.2016.10.038.
Повний текст джерелаFukushima, Shoichiro, Masaaki Shimatani, Satoshi Okuda, Shinpei Ogawa, Yasushi Kanai, Takao Ono, Koichi Inoue, and Kazuhiko Matsumoto. "Photogating for small high-responsivity graphene middle-wavelength infrared photodetectors." Optical Engineering 59, no. 03 (March 18, 2020): 1. http://dx.doi.org/10.1117/1.oe.59.3.037101.
Повний текст джерелаHojun, Seong, Cho Kyoungah, Yun Junggwon, Kwak Kiyeol, Jun Jin Hyung, and Kim Sangsig. "Photogating effects of HgTe nanoparticles on a single ZnO nanowire." Solid State Sciences 12, no. 8 (August 2010): 1328–31. http://dx.doi.org/10.1016/j.solidstatesciences.2010.04.034.
Повний текст джерелаKim, Ho Jin, Khang June Lee, Junghoon Park, Gwang Hyuk Shin, Hamin Park, Kyoungsik Yu, and Sung-Yool Choi. "Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating." ACS Applied Materials & Interfaces 12, no. 34 (July 28, 2020): 38563–69. http://dx.doi.org/10.1021/acsami.0c09960.
Повний текст джерелаGuan, Xinwei, Zhenwei Wang, Mrinal K. Hota, Husam N. Alshareef, and Tom Wu. "P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating." Advanced Electronic Materials 5, no. 1 (September 27, 2018): 1800538. http://dx.doi.org/10.1002/aelm.201800538.
Повний текст джерелаLi, Xiangyang, Shuangchen Ruan, and Haiou Zhu. "SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse." Nanomaterials 12, no. 16 (August 13, 2022): 2777. http://dx.doi.org/10.3390/nano12162777.
Повний текст джерелаHuang, Hai, Jianlu Wang, Weida Hu, Lei Liao, Peng Wang, Xudong Wang, Fan Gong, et al. "Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect." Nanotechnology 27, no. 44 (September 27, 2016): 445201. http://dx.doi.org/10.1088/0957-4484/27/44/445201.
Повний текст джерелаWang, Yang, Fang Zhong, Hailu Wang, Hao Huang, Qing Li, Jiafu Ye, Meng Peng, et al. "Photogating-controlled ZnO photodetector response for visible to near-infrared light." Nanotechnology 31, no. 33 (June 8, 2020): 335204. http://dx.doi.org/10.1088/1361-6528/ab8e75.
Повний текст джерелаDi Bartolomeo, Antonio, Francesca Urban, Enver Faella, Alessandro Grillo, Aniello Pelella, Filippo Giubileo, Niall McEvoy, Farzan Gity, and Paul Kennedy Hurley. "Electrical Conduction and Photoconduction in PtSe2 Ultrathin Films." Materials Proceedings 4, no. 1 (November 10, 2020): 28. http://dx.doi.org/10.3390/iocn2020-07814.
Повний текст джерелаTang, Hongyu, Sergey G. Menabde, Tarique Anwar, Junhyung Kim, Min Seok Jang, and Giulia Tagliabue. "Photo-modulated optical and electrical properties of graphene." Nanophotonics 11, no. 5 (January 14, 2022): 917–40. http://dx.doi.org/10.1515/nanoph-2021-0582.
Повний текст джерелаHu, H. J., W. L. Zhen, S. R. Weng, Y. D. Li, R. Niu, Z. L. Yue, F. Xu, L. Pi, C. J. Zhang, and W. K. Zhu. "Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires." Applied Physics Letters 120, no. 20 (May 16, 2022): 201101. http://dx.doi.org/10.1063/5.0080334.
Повний текст джерелаJiang, Hao, Jingxuan Wei, Feiying Sun, Changbin Nie, Jintao Fu, Haofei Shi, Jiuxun Sun, Xingzhan Wei, and Cheng-Wei Qiu. "Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering." ACS Nano 16, no. 3 (February 22, 2022): 4458–66. http://dx.doi.org/10.1021/acsnano.1c10795.
Повний текст джерелаGao, Kaicong, Shuling Ran, Qin Han, Qi Yang, Hao Jiang, Jintao Fu, Chongqian Leng, et al. "High zero-bias responsivity induced by photogating effect in asymmetric device structure." Optical Materials 124 (February 2022): 112013. http://dx.doi.org/10.1016/j.optmat.2022.112013.
Повний текст джерелаSchropp, Ruud E. I., and Francisco A. Rubinelli. "Photogating effect as a defect probe in hydrogenated nanocrystalline silicon solar cells." Journal of Applied Physics 108, no. 1 (July 2010): 014509. http://dx.doi.org/10.1063/1.3437393.
Повний текст джерелаGreene, Brandon L., Gregory E. Vansuch, Bryant C. Chica, Michael W. W. Adams, and R. Brian Dyer. "Applications of Photogating and Time Resolved Spectroscopy to Mechanistic Studies of Hydrogenases." Accounts of Chemical Research 50, no. 11 (October 30, 2017): 2718–26. http://dx.doi.org/10.1021/acs.accounts.7b00356.
Повний текст джерелаLuo, Fang, Mengjian Zhu, Yuan tan, Honghui Sun, Wei Luo, Gang Peng, Zhihong Zhu, Xue-Ao Zhang, and Shiqiao Qin. "High responsivity graphene photodetectors from visible to near-infrared by photogating effect." AIP Advances 8, no. 11 (November 2018): 115106. http://dx.doi.org/10.1063/1.5054760.
Повний текст джерелаPark, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.
Повний текст джерелаAbderrahmane, Abdelkader, Pan-Gum Jung, Changlim Woo, and Pil Ju Ko. "Effect of Gate Dielectric Material on the Electrical Properties of MoSe2-Based Metal–Insulator–Semiconductor Field-Effect Transistor." Crystals 12, no. 9 (September 14, 2022): 1301. http://dx.doi.org/10.3390/cryst12091301.
Повний текст джерелаXie, An, Yuxian Jian, Zichao Cheng, Yu Gu, Zhanyang Chen, Xiufeng Song, and Zaixing Yang. "High responsivity of hybrid MoTe2/perovskite heterojunction photodetectors." Journal of Physics: Condensed Matter 34, no. 15 (February 10, 2022): 154007. http://dx.doi.org/10.1088/1361-648x/ac4f1b.
Повний текст джерелаFeng, Guangdi, Jie Jiang, Yanran Li, Dingdong Xie, Bobo Tian, and Qing Wan. "Flexible Vertical Photogating Transistor Network with an Ultrashort Channel for In‐Sensor Visual Nociceptor." Advanced Functional Materials 31, no. 36 (June 24, 2021): 2104327. http://dx.doi.org/10.1002/adfm.202104327.
Повний текст джерелаLee, Hee Sung, Kwang H. Lee, Youn-Gyoung Chang, Syed Raza Ali Raza, Seongil Im, Dong-Ho Kim, Hye-Ri Kim, and Gun-Hwan Lee. "Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode." Applied Physics Letters 98, no. 22 (May 30, 2011): 223505. http://dx.doi.org/10.1063/1.3598396.
Повний текст джерелаJoshi, Swati, Prabhat Kumar Dubey, and Brajesh Kumar Kaushik. "Photosensor Based on Split Gate TMD TFET Using Photogating Effect for Visible Light Detection." IEEE Sensors Journal 20, no. 12 (June 15, 2020): 6346–53. http://dx.doi.org/10.1109/jsen.2020.2966728.
Повний текст джерелаYamamoto, Mahito, Keiji Ueno, and Kazuhito Tsukagoshi. "Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer." Applied Physics Letters 112, no. 18 (April 30, 2018): 181902. http://dx.doi.org/10.1063/1.5030525.
Повний текст джерелаShen, Tien‐Lin, Yu‐Wei Chu, Yu‐Kuang Liao, Wen‐Ya Lee, Hao‐Chung Kuo, Tai‐Yuan Lin, and Yang‐Fang Chen. "Ultrahigh‐Performance Self‐Powered Flexible Photodetector Driven from Photogating, Piezo‐Phototronic, and Ferroelectric Effects." Advanced Optical Materials 8, no. 1 (November 26, 2019): 1901334. http://dx.doi.org/10.1002/adom.201901334.
Повний текст джерелаGe, Bangtong, Changbin Nie, and Jun Shen. "A hybrid photodetector of graphene/TiO2/inorganic PbS quantum dots for fast response." Japanese Journal of Applied Physics 61, no. 4 (March 17, 2022): 040903. http://dx.doi.org/10.35848/1347-4065/ac56fc.
Повний текст джерелаZhu, Yiyue, Wen Huang, Yifei He, Lei Yin, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. "Perovskite-Enhanced Silicon-Nanocrystal Optoelectronic Synaptic Devices for the Simulation of Biased and Correlated Random-Walk Learning." Research 2020 (September 2, 2020): 1–9. http://dx.doi.org/10.34133/2020/7538450.
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