Дисертації з теми "Photodiode avalanche"
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Ong, Daniel Swee Guan. "The type-II/InA1As avalanche photodiode and optimisation of avalanche photodiodes in receiver systems." Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554392.
Повний текст джерелаVirot, Léopold. "Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse." Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112414/document.
Повний текст джерелаTo address the issue related to the limitations of metallic interconnects especially in terms of bitrate, Si photonics has become the technology of choice. One of the basic components of photonic circuits is the photodetector: It allows to convert an optical signal into an electrical signal. Photodetectors based on Ge on Si have shown their potential and offer the best alternative to III-V photodetectors, for integration into Si photonic circuits. In this context, the Ge on Si photodiodes have been studied. The optimization of pin photodiodes enabled the achievement of state of the art results. A new approach using a double lateral Si/Ge/Si heterojunction was proposed to increase the responsivity but also to provide a better integration solution, especially with Si modulators. To further increase the sensitivity of the receivers, the use of avalanche photodiodes, is however necessary. SACM (Separate Absorption Charge Multiplication) structure, combining Si low multiplication noise and Ge absorption at telecom wavelengths was first studied. Models have been developed to optimize the devices, and the photodiodes have been fabricated and characterized. The results obtained on the surface illuminated photodiodes (Gain-bandwidth product of 560GHz only -11V) are very encouraging for waveguide integration. On the other hand, Ge on Si pin photodiodes have been studied in avalanche. The small width of the intrinsic region contributed to the multiplication noise reduction thanks to "dead space" effect, and operation at 10Gbps for a gain of 20 and an optical power of -26dBm at only-7V, without using amplifier (TIA), have been demonstrated. These developments open the way to fast, low power consumption and high sensitivity receivers
Fyath, Raad Sami. "Advanced avalanche photodiode receivers in optical communications." Thesis, Bangor University, 1990. https://research.bangor.ac.uk/portal/en/theses/advanced-avalanche-photodiode-receivers-in-optical-communications(7774537f-4772-4a52-b216-d04db73b3781).html.
Повний текст джерелаAbautret, Johan. "Conception, fabrication et caractérisation de photodiodes à avalanche InSb." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20232.
Повний текст джерелаThis thesis realized at the IES, with the collaboration of SOFRADIR and the CEA-LETI, had for objective the potential evaluation of the InSb material for the realization of midwave infrared (MWIR) avalanche photodiodes (APD). Studying the design (TCAD modeling), the MESA technological fabrication (wet etching, dry etching, passivation) and analyzing the electrical characterizations of devices fabricated, this work has investigated all the scientific elements necessary for the development of this photodetector technology. The MBE (Molecular Beam Epitaxy) grow InSb photodiodes have shown monopixel dark current density from 10 to 30nA/cm² at -50mV and 77K. These performances are at the state of the art for InSb epi-diodes and highlight the excellent crystal quality of the epitaxial layers. The first InSb APDs were grown and characterized. With a pure electron injection, we have observed an exponential increase of the gain, signature of a single carrier multiplication exclusively initiated by the electrons. A gain value of 3 was measured at -4V. This asymmetrical aspect of the impact ionization process would indicate the possibility to obtain a gain without excess noise. This is fundamental for the intended imaging applications. At this stage, InSb APD performances are limited by a too high residual doping level, resulting in a strong band to band tunneling current. Nevertheless, this work provides all the milestones needed for the InSb APD development where the key point is undoubtedly the getting of low residual doping level in the multiplication layer
Strasburg, Jana Dee. "Characterization of avalanche photodiode arrays for temporally resolved photon counting /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9710.
Повний текст джерелаGouy, Jean-Philippe. "Etude comparative de la photodiode PIN, de la photodiode à avalanche et du photoconducteur sur matériaux III-V." Lille 1, 1989. http://www.theses.fr/1989LIL10058.
Повний текст джерелаHaralson, Joe Nathan II. "Design, analysis, and macroscopic modeling of high speed photodetectors emphasizing the joint opening effect avalanche photodiode and the lateral P-I-N photodiode." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14940.
Повний текст джерелаYoo, Dongwon. "Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16220.
Повний текст джерелаMages, Phillip. "III-V to Si wafer fusion for the fused Si/InGaAs avalanche photodiode /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3090440.
Повний текст джерелаEgner, Joanna C., Michael Groza, Arnold Burger, Keivan G. Stassun, Vladimir Buliga, Liviu Matei, Julia G. Bodnarik, Ashley C. Stowe, and Thomas H. Prettyman. "Integration of a (6)LilnSe(2) thermal neutron detector into a CubeSat instrument." SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 2016. http://hdl.handle.net/10150/624360.
Повний текст джерелаZhang, Yun. "Fabrication and characterization of GaN visible-blind ultraviolet avalanche photodiodes." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29604.
Повний текст джерелаCommittee Chair: Shen, Shyh-Chiang; Committee Member: Doolittle, William A.; Committee Member: Dupuis, Russell Dean. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Scarberry, Thomas T. "Improved velocity data in circular jets using an avalanche photodiode-based 2-component point Doppler velocimeter." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=2187.
Повний текст джерелаTitle from document title page. Document formatted into pages; contains viii, 80 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 47-51).
Zhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.
Повний текст джерелаKayaian, Jean. "Conception et développement d'un luminomètre portable ultrasensible pour la détection de la bioluminescence." Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20218.
Повний текст джерелаThe development of a portable and efficient device, while reducing costs, meets the growing market for biological detection by the method of biochimiluminescence. This diagnostic tool of hygiene and quality in real time in situ allows for better security, risk management, traceability and risk monitoring.This tool will find application in the areas food, medical, pharmaceutical, cosmetic, environmental (water, air and surfaces), the tertiary or communities. Interests are industrial, environmental and economic, and reflect the desire to offer an innovative and competitive device in a booming market.Indeed, the detection of contaminants has become a priority in the management of microbiological hazards. Most current diagnostic methods are slow, costly, complex and limited in their implementation and their results.The diagnosis is essential in all industries, it is imperative to provide alternative solutions for the detection and quantification of pathogens or other toxic by the conception of new analytical tools in situ in real time with speed and high sensitivity. This requires a detailed study of biochimiluminescence (BCL) phenomena and the search for various optoelectronic components capable of detecting low power emitted light.The projet for the conception of a field-luminometer based on avalanche photodiodes, or PIN, or photomultiplier responds to the needs of detecting and measuring the light power radiated by reactions biochimiluminescence specific or not. The development of a portable measuring device for in situ quantification of biomass or molecules trace is necessary for the operation of the reactants.Indeed, existing devices provide information in RLU (Relative Light Units, arbitrary units implying a comparison to a known standard) and do not give a direct quantified information on the concentration of the desired item in the test sample. So, they do not optimize biochimiluminescence field. The objective of this work is to develop an alternative more efficient than current detection systems and is less expensive
Faure, Benoit. "MODELISATION ET OPTIMISATION DES PHOTODIODES A AVALANCHE ET HETEROJONCTION InP/InGaAs." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0003.
Повний текст джерелаNICHETTI, CAMILLA. "Development of avalanche photodiodes with engineered band gap based upon III-V semiconductors." Doctoral thesis, Università degli Studi di Trieste, 2021. http://hdl.handle.net/11368/2982139.
Повний текст джерелаPellion, Denis. "Modélisation, fabrication et évaluation des photodiodes à avalanche polarisées en mode Geiger pour la détection du photon unique dans les applications Astrophysiques." Phd thesis, Université Paul Sabatier - Toulouse III, 2008. http://tel.archives-ouvertes.fr/tel-00358847.
Повний текст джерелаDans l'état de l'art le meilleur détecteur de lumière est aujourd'hui le Photomultiplicateur (PMT), grâce à ses caractéristiques de sensibilité et de vitesse. Mais il présente quelques inconvénients : faible efficacité quantique, coût, poids etc. Nous présentons dans cette thèse une nouvelle technologie alternative : les compteurs de photons sur semi-conducteur, constitués de photodiodes polarisées en mode Geiger.
Ce mode de fonctionnement permet d'obtenir un effet de multiplication au moins identique à celui des PMT. Un modèle physique et électrique a été développé pour reproduire le comportement de ce détecteur.
Nous présentons ensuite dans ce travail de thèse un procédé technologique original permettant la réalisation de ces dispositifs dans la centrale de technologie du LAAS-CNRS, avec la simulation de chaque opération du processus.
Nous avons mis au point une fiche pour la caractérisation électrique des dispositifs, du mode statique au mode dynamique, et vérifié la conformité aux simulations SILVACO, et au modèle initial. Les résultats obtenus sont déjà excellents, compte tenu qu'il s'agit d'une première étape de prototypage, et comparables avec les résultats publiés dans la littérature.
Ces composants sur silicium peuvent intervenir dans toutes les applications où il y a un photomultiplicateur, et le remplacer. Les applications sont donc très vastes et la croissance du marché très rapide. Nous présentons une première expérience d'astrophysique installée au Pic du Midi qui a détecté des flashs Tcherenkov de rayons cosmiques avec cette nouvelle technologie à semi-conducteur.
Reboli, Anne. "Utilisation de nouveaux détecteurs et de nouvelles molécules scintillantes associées pour la mesure des émetteurs alpha par scintallation liquide alpha." Paris 11, 2005. http://www.theses.fr/2005PA112236.
Повний текст джерелаALPHA EMITTERS ANALYSIS USING LIQUID SCINTILLATION SPECTROSCOPY IS OFTEN USED WHEN SENSITIVITY AND FAST SAMPLES PREPARATION ARE THE IMPORTANT POINTS. A MORE EXTENSIVE USE OF THIS TECHNIQUE IS UNTIL NOW LIMITED BY ITS POOR RESOLUTION COMPARED TO ALPHA PARTICLE SPECTROSCOPY WITH SEMICONDUCTOR DETECTORS. TO IMPROVE THE RESOLUTION AND THUS PROMOTE THIS METHOD FOR THE MEASUREMENT OF ACTINIDES IN ENVIRONMENT, WE HAVE TESTED SILICON AVALANCHE PHOTODIODES (APD) AS NEW DETECTORS FOR SCINTILLATION PHOTONS. THE SET-UP CONSISTS OF A LARGE AREA AVALANCHE PHOTODIODE (16 mm DIAMETER) COUPLED TO A THIN VIAL CONTAINING ALPHA-EMITTERS WITHIN A LIQUID SCINTILLATION COCKTAIL. AFTER OPTIMIZATION OF SEVERAL PARAMETERS LIKE BIAS VOLTAGE, TEMPERATURE, COUNTING GEOMETRY AND COMPOSITION OF THE SCINTILLATING COCKTAIL, ENERGY RESOLUTIONS HAVE BEEN FOUND TO BE BETTER THAN THOSE OBTAINED WITH STANDARD PHOTOMULTIPLIER TUBES (PMT): 5% (200 keV FWHM) FOR THORIUM 232 AND 4. 2% (240 keV FWHM) FOR PLUTONIUM 236. OUR RESULTS SHOW THAT THE IMPROVEMENT IS DUE TO LESS FLUCTUATION ASSOCIATED WITH LIGHT COLLECTION SINCE THE SPATIAL RESPONSE OF APDS IS MORE UNIFORM THAN THAT OF PMTS. THE EXPECTED GAIN ON QUANTUM EFFICIENCY (80% FOR APDS INSTEAD OF 25% FOR PMTS) IS NULLIFIED BY A CORRESPONDING INCREASE ON ELECTRONIC NOISE AND EXCESS NOISE FACTOR. SIGNIFICANT BETTER RESULTS ARE FORESEEN BY USING GREEN SCINTILLATORS (450-550 nm WAVELENGTHS REGION) WITH LARGER STOKES-SHIFT AND BLUE-ENHANCED APDS WHICH REACHE THEIR MAXIMUM QUANTUM EFFICIENCY IN THIS REGION
Ghose, Abhijit. "Pulsed measurement based nonlinear characterization of avalanche photodiode for the time error correction of 3D pulsed laser radar." Kassel Kassel Univ. Press, 2005. http://deposit.ddb.de/cgi-bin/dokserv?id=2709432&prov=M&dok_var=1&dok_ext=htm.
Повний текст джерелаKirkby, David Robert. "A picosecond optoelectronic cross correlator using a gain modulated avalanche photodiode for measuring the impulse response of tissue." Thesis, University College London (University of London), 1999. http://discovery.ucl.ac.uk/1456753/.
Повний текст джерелаAristin, Pascale. "Fabrication et caractérisation de photodiodes à avalanche à puits quantiques multiples GaAs." Toulouse, INSA, 1992. http://www.theses.fr/1992ISAT0029.
Повний текст джерелаMoutaye, Emmanuel. "Intégration de mélangeurs optoélectroniques en technologie CMOS pour la télémétrie laser embarquée haute résolution." Thesis, Toulouse, INPT, 2010. http://www.theses.fr/2010INPT0134/document.
Повний текст джерелаDistance measurement and object detection has become essential in many fields such as automotive and robotics, medical applications, industrial processes and farming systems, surveillance and security, etc.. In order to improve the performance of laser ranging devices in terms of noise and crosstalk, an optoelectronic heterodyne technique of mixing should be used. Moreover, the aspect of embedded system requires a reduction in the size and power consumption for the same performance. The integration of optoelectronic mixers in CMOS technology will provide an optimal solution to this approach through its many advantages (integrated instrumentation circuit on the same chip, well-known models, reasonable cost, high performance, ...). Thus this thesis will focus on the study of optoelectronic mixers in CMOS technology for high resolution, embedded laser range finding systems. The first chapter of this thesis discusses the various technique of distance measurement by laser ranging and justifies the choice of phase shift technique and the gain in performance related to heterodyning. The second chapter describes the electrical and optoelectronic mixers and the properties needed to develop them. Some photodetectors are presented given the opportunity to use optoelectronic mixers and a potential integration with CMOS technology. The main constraints to the integration of CMOS photosensors used in optoelectronic mixers are set out in Part III. The work of design and optimization of structures and phases of simulations and testing are detailed. Finally, to experimentally confirm the earlier studies, the final chapter presents the design of a measuring head for a multichannel photoreceptor CMOS for a high resolution laser range finder
Ramirez, Julian David Rodriguez. "Desempenho de dispositivos fotodetectores com multiplicação de elétrons por avalanche." Universidade de São Paulo, 2010. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-29112016-134743/.
Повний текст джерелаThis work presents the results obtained in the development of a system specified to perform tests in the characterization of photo-detectors devices such as avalanche photodiodes. The test system is prepared to contribute to the characterization of the photo-detection in charge-coupled devices with electron multiplication (EMCCD). The objective of this study is to evaluate the performance of photo-detectors devices to characterize the most significant parameters in the optic transduction in order to collaborate in the project of an embedded electronic system for controlling and reading the information contained with the EMCCD. The technology of the electron multiplication in CCD devices and avalanche diodes has important applications in monitoring the environment of low light, astronomy and other scientific imaging applications including the low level of bioluminescence for the identification of drugs and applications of genetic engineering. For purposes of assessing the performance of the photo-detector it was necessary to develop an infrastructure to have proper control of the operating temperature of the EMCCD. Options were named with a montage of Peltier cell cooling and a choice of cryogenically cooled with liquid nitrogen. The results are useful in the detection of ultra weak light signals while minimizing detector noise during the acquisition of images from instrument comprising an optical tunable filter, that will be integrated into SOAR 4 meters telescope, installed in Chile, for observations improved with adaptive optics.
Ghose, Abhijit [Verfasser]. "Pulsed measurement based nonlinear characterization of avalanche photodiode for the time error correction of 3D pulsed laser radar / Abhijit Ghose." Kassel : Kassel Univ. Press, 2005. http://d-nb.info/982014481/34.
Повний текст джерелаVilella, Figueras Eva. "Feasibility of Geiger-mode avalanche photodiodes in CMOS standard technologies for tracker detectors." Doctoral thesis, Universitat de Barcelona, 2013. http://hdl.handle.net/10803/131100.
Повний текст джерелаAquesta tesi presenta el desenvolupament d’un detector de píxels de GAPDs (Geiger-mode Avalanche PhotoDiodes) dedicat principalment a rastrejar partícules en futurs col•lisionadors lineals. Els GAPDs ofereixen unes qualitats extraordinàries per satisfer els requisits extremadament exigents d’ILC (International Linear Collider) i CLIC (Compact LInear Collider), els dos projectes per la propera generació de col•lisionadors que s’han proposat fins a dia d’avui. Entre aquestes qualitats es troben una sensibilitat extremadament elevada, un guany virtualment infinit i una resposta molt ràpida, a part de ser compatibles amb les tecnologies CMOS estàndard. En concret, els detectors de GAPDs fan possible la conversió directa d’un esdeveniment generat per una sola partícula en un senyal CMOS digital amb un temps inferior al nanosegon. Com a resultat d’aquest fet, els GAPDs poden ser llegits després de cada bunch crossing (la col•lisió de les partícules), una qualitat única que cap dels seus competidors pot oferir en el moment actual. Malgrat tots aquests avantatges, els detectors de GAPDs pateixen dos grans problemes. D’una banda, existeixen fenòmens de soroll inherents al sensor, els quals indueixen polsos de soroll que no poden ser distingits dels esdeveniments reals generats per partícules i que a més empitjoren l’ocupació del detector a nivells inacceptables. D’altra banda, el fill-factor (és a dir, l’àrea sensible respecte l’àrea total) és molt baix i redueix l’eficiència detectora. En aquesta tesi s’han investigat solucions als dos problemes comentats i que a més compleixen amb les especificacions altament severes dels futurs col•lisionadors lineals. El detector de píxels de GAPDs, el qual ha estat monolíticament integrat en un procés HV-CMOS estàndard de 0.35 μm, incorpora circuits de lectura en mode voltatge que permeten operar el sensor en l’anomenat mode time-gated per tal de reduir el soroll detectat. L’eficiència de la tècnica proposada queda demostrada amb la gran varietat d’experiments que s’han dut a terme. Els resultats del beam-test dut a terme al CERN indiquen la capacitat del detector de píxels de GAPDs per detectar partícules altament energètiques. A banda d’això, també s’han estudiat els beneficis d’integrar un detector de píxels de GAPDs en un procés 3D per tal d’incrementar el fill-factor. L’anàlisi realitzat conclou que es poden assolir fill-factors superiors al 90%.
Lee, Hong-Wei. "Solid-State Impact-Ionization Multiplier." BYU ScholarsArchive, 2006. https://scholarsarchive.byu.edu/etd/1080.
Повний текст джерелаRhéaume, Vincent-Philippe. "Circuits d'instrumentation intégrés pour caractérisation de diodes monophotoniques à avalanche en technologie CMOS haute tension 0,8 μm". Mémoire, Université de Sherbrooke, 2015. http://hdl.handle.net/11143/8141.
Повний текст джерелаDumas, Arnaud. "Apport des photodiodes à avalanche HgCdTe pour la télédétection du CO2 atmosphérique par lidar DIAL à 2 micromètres." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX105/document.
Повний текст джерелаThe Short Wavelength Infrared (SWIR) region (1.5-2 μm) is well adapted for diffe- rential absorption lidar technique (DIAL) for several reasons : (i) it covers absorption bands with suitable intensity for the main greenhouse gases (CO2, CH4, H2O, etc.) (ii) the extinction due to particles is low (iii) it belongs to the eye safe domain. However, one main drawback has long been the lack of efficient photodetectors for such frequencies. A major enhancement occurred in the early 2000s when it was understood that HgCdTe avalanche photodiodes (APD) present close to unity excess noise factor on top of high gain and very low dark current. These features make this technology an almost ideal amplifier, especially useful for ultra low flux applications such as lidar.In this thesis, we analyze the performances of a custom large diameter (200μm) monopixel HgCdTe-APD based detector (designed at CEA-LETI) in the framework of atmospheric CO2 measurements with the DIAL technique. The laser emitter, a custom solid-state Ho :YLF laser developed at the Laboratoire de Météorologie Dynamique, is tunable in the 2050-2054nm range and produces 10 mJ pulses at a repetition rate of 2kHz. This emitter is associated to a detection chain adapted to the HgCdTe APD based detector to provide the first atmospheric DIAL measurements using the HgCdTe APD technology.Experiments confirmed the outstanding sensitivity of the detector (75 noise photons per characteristic time given a 20MHz bandwidth) and highlight the huge potential of this technology for any application relying on low light flux detection in SWIR. With the system previously mentioned, we reach an precision of 10-20 % on CO2 mixing ratio for a time-space resolution of 100 m and 4 s for measurements in the atmospheric boundary layer. Regarding the detector impulse response, we have shown evidence of a negative influence of reverse bias on the long term settling time of the APD. This phenomenon limits the dynamic range of useful signals and contraints the DIAL system. Thanks to numerical simulation taking into account this behaviour, we derive numerically expected biases on DIAL measurements
Panglosse, Aymeric. "Modélisation pour la simulation et la prédiction des performances des photodiodes à avalanche en mode Geiger pour Lidars spatiaux." Thesis, Toulouse, ISAE, 2019. http://www.theses.fr/2019ESAE0046.
Повний текст джерелаThis work focuses on modelling for simulation and prediction purposes ofCMOS SPADs performance parameters used in spaceborne Lidars. The innovative side ofthis work lies in a new methodology based on physical models for semiconductor devices,measurements performed on the targeted CMOS process and commercial simulation tools topredict CMOS SPADs performances. This method allows to get as close as possible to theprocess reality and to improve predictions. A set of SPAD has been designed and fabricated,and is used for measurements and model validation. SPAD design has been done with respectto CNES and Airbus Defence Space Lidar specification, in order to produce devices that willimprove our knowledge in terms of understanding of the involved physical mechanisms, SPADsdesign and test method, for a possible integration within their future spaceborne Lidars
Vanel, Jean-Charles. "Étude et caractérisation de photodiodes à avalanche en silicium pour le calorimètre électromagnétique de l'expérience CMS." Grenoble 1, 1997. http://www.theses.fr/1997GRE10236.
Повний текст джерелаADAMO, Gabriele. "THE SILICON PHOTOMULTIPLIER:AN IN-DEPTH ANALYSIS IN THE CONTINUOUS WAVE REGIME." Doctoral thesis, Università degli Studi di Palermo, 2014. http://hdl.handle.net/10447/90861.
Повний текст джерелаThe Silicon Photomultiplier (SiPM) is a novel solid state photon counting detector consisting of a parallel array of avalanche photodiodes biased beyond their breakdown voltage. It has known a fast development in the last few years as a possible alternative to vacuum photomultiplier tubes (PMTs) and conventional avalanche photodiodes (APDs). Indeed, current research in photodetectors is directed toward an increasing miniaturization of the pixel size, thus both improving the spatial resolution and reducing the device dimensions. SiPMs show high photon detection efficiency in the visible and near infrared range, low power consumption, high gain, ruggedness, compact size, excellent single-photon response, fast rise time and reduced sensitivity with temperature, voltage fluctuations, and magnetic fields. Furthermore, solid-state technology owns the typical advantages of the planar integration process, therefore, they can be manufactured at low costs and with high reproducibility. SiPMs performances in photon counting regime have been deeply investigated in literature, using picosecond pulsed lasers. In this regime, they can be used in applications like positron emission tomography, magnetic resonance imaging, nuclear physics instrumentation, high energy physics. An optical characterization performed via continuous wave (CW) sources has seldom been reported even though this kind of excitation seems to be very useful in several fields such as low power measurements, near-infrared spectroscopy and immunoassay tests. In this Thesis, I perform an electrical and optical analysis of two novel classes of SiPMs in the CW regime. After a brief introduction about the SiPM operating principle, parameters and properties (Chapter 1), I describe my responsivity measurements made with an incident optical power down to tenths of picowatts, monitoring the temperature of the device packages, and on a spectrum ranging from ultraviolet to near infrared (Chapter 2). These measurements allowed to define an innovative criterion to establish the conditions necessary for the device to be usable in CW regime. Chapter 3 continues with an investigation of the SiPM signal-to-noise ratio. Measurements employed a 10 Hz equivalent noise bandwidth, around a tunable reference frequency in the range 1 - 100 kHz, and were performed varying the applied bias and the temperature of the SiPM package. These results were compared with similar measurements performed on a PMT. Once the SiPM is characterized, Chapter 4 reports an innovative application: an optical characterization of a class of photonic crystals infiltrated with a new ethanol responsive hydrogel employing the SiPM as a reference photodetector. This activity shows innovative developments for the ethanol sensing to be applied into inexpensive and minimally invasive breathalyzers. Finally, Appendix A shows an electro-optical characterization of a novel class of Silicon Carbide (SiC) vertical Schottky UV detectors. I performed responsivity measurements as a function of the wavelength and the applied bias, varying the temperature of the SiC package, in the 200 - 400 nm range. The results of this work show a new approach to investigate the SiPM capabilities, the CW regime, demonstrating its outstanding performances and innovative applications. This Thesis was made in collaboration with the "Advanced Sensors Development Group" of STMicroelectronics and partially supported by the Project HIGH PROFILE (HIGH-throughput PROduction of FunctIonaL 3D imagEs of the brain), which is funded by the European Community under the ARTEMIS Joint Undertaking scheme.
Nolet, Frédéric. "Conception d'un circuit d'étouffement de photodiodes avalanches monophotoniques pour une intégration matricielle dans un module de comptage monophotonique." Mémoire, Université de Sherbrooke, 2016. http://hdl.handle.net/11143/8827.
Повний текст джерелаDerelle, Sophie. "Eléments d'orientation des photodiodes à avalanches pour l'infrarouge : application à la filière HgCdTe." Paris 11, 2009. http://www.theses.fr/2009PA112335.
Повний текст джерелаThe current development of infrared focal plane arrays results in the integration of new optical and electronic functionalities to meet the needs for emergent applications like hyperspectral and active imaging. These evolutions are accompanied by a reduction of the incident photon number per pixel what raises the question of the preservation of photonic signal integrity. A possible response to that issue is the use of detector with gain and low associated noise. The phenomenon of electronic amplification without excess noise has been demonstrated for the frrst time in 2001 in mid¬wavelength infrared HgCdTe avalanche photodiodes (APDs). This work, made at Onera in collaboration with CEA/LETI, aims at providing elements of guiding for this new detector technology. To reach this goal, 1 realized experimental test benches in order to measure electro-optical performance (gain M, excess noise factor F, dark current) of several devices and 1 developed a Monte Carlo simulation tool in order to better understand the mechanism of impact ionization in the HgCdTe alloy and particularly the effect of various physical and technological parameters on M and F. This work makes it possible to demonstrate an amplification without excess noise in the French technology for long wavelength infrared APDs. These detectors nevertheless suffer from a high tunnelling current which limits their use. Monte Carlo simulations show that the gain and the excess noise factor are little modified by variations of the multiplication region thickness which leads us to carry out new long wavelength infrared devices, with thicker multiplication region, in order to reduce tunnelling current
HOW, KEE CHUN LIP SUN. "La passivation des composes epitaxies sur inp par depot photolytique direct de nitrure de silicium : application a la photodiode a avalanche a multipuits quantiques." Paris 11, 1997. http://www.theses.fr/1997PA112080.
Повний текст джерелаBergeron, Mélanie. "Évaluation des performances du scanner LabPET." Mémoire, Université de Sherbrooke, 2009. http://savoirs.usherbrooke.ca/handle/11143/4008.
Повний текст джерелаBérard, Philippe. "Réalisation d'un nouveau prototype combiné TEP/TDM pour l'imagerie moléculaire de petits animaux." Thèse, Université de Sherbrooke, 2010. http://savoirs.usherbrooke.ca/handle/11143/4289.
Повний текст джерелаJürgensen, Nadia. "Étalonnage automatique des détecteurs pour scanner LabPET II." Mémoire, Université de Sherbrooke, 2017. http://hdl.handle.net/11143/11104.
Повний текст джерелаCohen-Jonathan, Cécile. "Photodiodes à avalanche à multi puits quantiques AllnAs/AlGaInAs, à éclairage latéral pour les télécommunications à 20 Gbit/s." Grenoble 1, 1998. http://www.theses.fr/1998GRE10089.
Повний текст джерелаButera, Silvia. "InAs avalanche photodiodes." Thesis, Heriot-Watt University, 2015. http://hdl.handle.net/10399/3043.
Повний текст джерелаCadorette, Jules. "Étude des paramètres de contrôle d'un système de détection basé sur des détecteurs à photodiode à avalanche : application à la tomographie par émission de positrons à haute résolution spatiale." Mémoire, Université de Sherbrooke, 1994. http://hdl.handle.net/11143/12057.
Повний текст джерелаXie, Shiyu. "Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes." Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/2267/.
Повний текст джерелаKřivák, Petr. "Optické bezkabelové spoje s velkým dosahem." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-233453.
Повний текст джерелаSiblini, Issam. "Étude et réalisation d'un corrélateur de "paires de photons successifs" : application à la mesure du temps de corrélation d'une lumière à l'aide d'une photodiode à avalanche et mise en évidence du temps mort." Bordeaux 1, 1994. http://www.theses.fr/1994BOR10645.
Повний текст джерелаMaurais, Luc. "Conception d’un procédé de microfabrication pour l’assemblage 3D puce-à-puce de circuits intégrés hétérogènes à des fins de prototypage." Mémoire, Université de Sherbrooke, 2018. http://hdl.handle.net/11143/11911.
Повний текст джерелаTan, Lionel Juen Jin. "Telecommunication wavelength InP based avalanche photodiodes." Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489074.
Повний текст джерелаHambleton, Paul Jeffrey. "Performance modelling of thin avalanche photodiodes." Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289682.
Повний текст джерелаTapan, Ilhan. "Avalanche photodiodes as proportional photon detectors." Thesis, University of Bristol, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389143.
Повний текст джерелаAuckloo, Sheik Mamode Akeel. "Analog frontend circuits for avalanche photodiodes." Thesis, University of Sheffield, 2016. http://etheses.whiterose.ac.uk/17129/.
Повний текст джерелаDinh, Xuan Quyen. "Contribution à l'étude et la réalisation de systèmes de transmissions optiques sécurisées." Phd thesis, École normale supérieure de Cachan - ENS Cachan, 2007. http://tel.archives-ouvertes.fr/tel-00204765.
Повний текст джерелаTirino, Louis. "Transport Properties of Wide Band Gap Semiconductors." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.
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