Добірка наукової літератури з теми "Photoconductivity - Nanostructures"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Photoconductivity - Nanostructures".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Photoconductivity - Nanostructures"
Ruda, H., and A. Shik. "Ballistic photoconductivity in nanostructures." Applied Physics Letters 78, no. 18 (April 30, 2001): 2778–80. http://dx.doi.org/10.1063/1.1368372.
Повний текст джерелаChen, Cheng-Ying, Ming-Wei Chen, Jr-Jian Ke, Chin-An Lin, José R. D. Retamal, and Jr-Hau He. "Surface effects on optical and electrical properties of ZnO nanostructures." Pure and Applied Chemistry 82, no. 11 (August 6, 2010): 2055–73. http://dx.doi.org/10.1351/pac-con-09-12-05.
Повний текст джерелаMishra, Sheo K., U. K. Tripathi, Saurabh Dixit, K. C. Dubey, and R. K. Shukla. "ZnO Nano-microstructures and their Photo Conducting Properties Synthesized by Sol-Gel Method." SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 10, no. 02 (December 25, 2018): 95–98. http://dx.doi.org/10.18090/samriddhi.v10i02.3.
Повний текст джерелаSusha, N., K. Nandakumar, and Swapna S. Nair. "Enhanced photoconductivity in CdS/betanin composite nanostructures." RSC Advances 8, no. 21 (2018): 11330–37. http://dx.doi.org/10.1039/c7ra13116j.
Повний текст джерелаBayan, Sayan, Sheo K. Mishra, Purushottam Chakraborty, Dambarudhar Mohanta, Ravi Shankar, and Rajneesh K. Srivastava. "Enhanced vacuum-photoconductivity of chemically synthesized ZnO nanostructures." Philosophical Magazine 94, no. 9 (January 27, 2014): 914–24. http://dx.doi.org/10.1080/14786435.2013.869367.
Повний текст джерелаGubin M.Yu., Dzedolik I. V., Prokhorova T. V., Pereskokov V. S., and Leksin A. Yu. "Switching effects in plasmon circuits based on thin metal films and nanostructures with increased photoconductivity." Optics and Spectroscopy 132, no. 3 (2022): 406. http://dx.doi.org/10.21883/eos.2022.03.53564.2700-21.
Повний текст джерелаHuang, Y. H., R. S. Chen, J. R. Zhang, and Y. S. Huang. "Electronic transport in NbSe2two-dimensional nanostructures: semiconducting characteristics and photoconductivity." Nanoscale 7, no. 45 (2015): 18964–70. http://dx.doi.org/10.1039/c5nr05430c.
Повний текст джерелаYin, Z. G., X. W. Zhang, Z. Fu, X. L. Yang, J. L. Wu, G. S. Wu, L. Gong, and Paul K. Chu. "Persistent photoconductivity in ZnO nanostructures induced by surface oxygen vacancy." physica status solidi (RRL) - Rapid Research Letters 6, no. 3 (January 19, 2012): 117–19. http://dx.doi.org/10.1002/pssr.201105551.
Повний текст джерелаChitara, Basant, Amit K. Shringi, Biswadev Roy, Marvin H. Wu, and Fei Yan. "Facile synthesis and morphology-induced photoconductivity modulation of Bi2O2S nanostructures." Materials Letters 346 (September 2023): 134545. http://dx.doi.org/10.1016/j.matlet.2023.134545.
Повний текст джерелаSprincean, Veaceslav, Liviu Leontie, Iuliana Caraman, Oleg Lupan, Rainer Adeling, Silviu Gurlui, Aurelian Carlescu, Corneliu Doroftei та Mihail Caraman. "Preparation, Chemical Composition, and Optical Properties of (β–Ga2O3 Composite Thin Films)/(GaSxSe1−x Lamellar Solid Solutions) Nanostructures". Nanomaterials 13, № 14 (11 липня 2023): 2052. http://dx.doi.org/10.3390/nano13142052.
Повний текст джерелаДисертації з теми "Photoconductivity - Nanostructures"
Green, Travis Christopher. "Photo-induced charge carrier dynamics and self-organization in semiconductor and metallic nanocrystals : in between the bulk and individual molecules." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/30480.
Повний текст джерелаRezgui, Béchir. "Etude des propriétés optiques, électriques et structurales de nanoparticules de silicium insérées dans une matrice diélectrique et étude de leur intégration pour des cellules photovoltaïques à haut rendement." Lyon, INSA, 2010. http://theses.insa-lyon.fr/publication/2010ISAL0090/these.pdf.
Повний текст джерелаSilicon nanoparticles (Si-Np) embedded in dielectric matrix have received attention as promising materials for optoelectronic applications. More specifically, bandgap engineering of new materials based on Si-Np has been proposed for possible application in an "all-silicon" tandem solar cell within the field of "third generation" photovoltaics. Such an application would require nanoparticles to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these nanostructures. This thesis investigates the structural, optical and electrical properties of Si-Np grown in-situ or via solid phase crystallisation in different host matrices. A study of the relevant plasma enhanced chemical vapor deposition (PECVD) parameters for the formation of Si-Np in amorphous silicon nitride was carried out and the optimization of each deposition parameters, for obtaining best material quality, is presented. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, transmission electron microscopy and X-ray reflectivity were employed to gather structural information about the Si-Np-SiNx structures. A case study on the effect of annealing temperature on the size and density of Si-Np is demonstrated. Size dependent photoluminescence and absorption is presented for SiO2/SiOx/SiO2 multilayer structures embedded with Si-Np. A similar multilayers based on silicon nitride material, grown by PECVD, are also investigated. Photogenerated current of these structures, extracted from the photocurrent measurements is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. In addition, the effect of boron doping of gas-phase silicon nanoparticles on the light emission and structural properties is studied. These observations may be important for future photovoltaic applications
Golub, A. S., N. D. Lenenko, E. P. Krinichnaya, O. P. Ivanova, I. V. Klimenko, and T. S. Zhuravleva. "Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35055.
Повний текст джерелаYang, Hung-Wei, and 楊紘瑋. "The study of InSe nanostructure photoconductivity characterization." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/28x84z.
Повний текст джерела國立臺灣科技大學
應用科技研究所
105
Photoconduction and electronic transport properties in the direct-bandgap layer semiconductor of hexagonal indium selenide(InSe)grown by chemical vapor transport (CVT)have been investigated. The InSe layer nanostructure devices were fabricated using focused-ion beam (FIB) deposition and platinum (Pt) as the contact metal. By using different excitation wavelength, the InSe nanosheets show a higher photoresponse to the ultraviolet light illumination.The photocurrent increases nonlinearly with an increase at light intensity.Notably, under the same wavelength excitation , the InSe nanosheet photodetectors show the optimal responsivity and detectivity compared to most of the layer semiconductor nanostructures. The normalized gain, which defines the inherent photocurrent collection efficiency , of the In Senanosheets is over two orders of magnitude higher than those of the otherlayer materials. The environment-dependent photoconductivity measurement indicates that the InSe nanomaterials follow the oxygen-sensitive photoconduction mechanism. The physical origins resulting in the superior photoconductivity and detector performance in the InSe nanosheets were also discussed.
Книги з теми "Photoconductivity - Nanostructures"
Song, Jin-Joo. Ultrafast phenomena in semiconductors and nanostructure materials XIV: 24-27 January 2010, San Francisco, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2010.
Знайти повний текст джерелаThon, Tsen Kong, and Society of Photo-optical Instrumentation Engineers., eds. Ultrafast phenomena in semiconductors and nanostructure materials XI and Semiconductor photodetectors IV: 22-24 January, 2007, San Jose, California, USA. Bellingham, Wash: SPIE, 2007.
Знайти повний текст джерелаТези доповідей конференцій з теми "Photoconductivity - Nanostructures"
Jensen, Soren A., Ronald Ulbricht, Akimitsu Narita, Xinliang Feng, Klaus Mullen, Dmitry Turchinovich, Tobias Hertel, and Mischa Bonn. "Terahertz photoconductivity of graphene nanostructures." In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013). IEEE, 2013. http://dx.doi.org/10.1109/irmmw-thz.2013.6665852.
Повний текст джерелаALESHKIN, V. Ya, A. V. BIRYUKOV, S. V. GAPONOV, Z. F. KRASIL'NIK, and V. L. MIRONOV. "SCANNING TUNNELING MICROSCOPE INVESTIGATION OF LOCAL PHOTOCONDUCTIVITY IN SEMICONDUCTOR NANOSTRUCTURES." In Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0026.
Повний текст джерелаFujiwara, A. "Temperature Dependence of Photoconductivity of Single-Wall Carbon Nanotubes." In MOLECULAR NANOSTRUCTURES: XVII International Winterschool Euroconference on Electronic Properties of Novel Materials. AIP, 2003. http://dx.doi.org/10.1063/1.1628008.
Повний текст джерелаTeichert, Christian. "Advanced AFM Techniques to Study Photoconductivity of Inorganic and Organic Semiconductor Nanostructures." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.fallmeeting.2018.155.
Повний текст джерелаTeichert, Christian. "Advanced AFM Techniques to Study Photoconductivity of Inorganic and Organic Semiconductor Nanostructures." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.nfm.2018.155.
Повний текст джерелаFujiwara, A. "Photoconductivity and Local Transport Properties of Single-Wall Carbon Nanotubes." In STRUCTURAL AND ELECTRONIC PROPERTIES OF MOLECULAR NANOSTRUCTURES: XVI International Winterschool on Electronic Properties of Novel Materials. AIP, 2002. http://dx.doi.org/10.1063/1.1514115.
Повний текст джерелаKan’no, K. "Photoconductivity Associated with Thermal Dissociation of Frenkel Excitons in Pristine C60 Crystals." In ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2005. http://dx.doi.org/10.1063/1.2103818.
Повний текст джерелаKobeleva, Svetlana, Ivan Schemerov, Artem Sharapov, and Sergey Yurchuk. "CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1555.silicon-2020/55-58.
Повний текст джерелаConte, L., U. Coscia, D. K. Basa, G. Ambrosone, and V. Rigato. "Spectral photoconductivity of nanostructured silicon carbon films spectral photoconductivity of SiC thin films." In 2014 Fotonica AEIT Italian Conference on Photonics Technologies (Fotonica AEIT). IEEE, 2014. http://dx.doi.org/10.1109/fotonica.2014.6843892.
Повний текст джерелаGarcia-Macedo, Jorge, Alfredo Franco, Guadalupe Valverde, and Jeffrey I. Zink. "Photoconductivity on nanostructured sol-gel thin films with silver nanoparticles." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Zakya H. Kafafi and Paul A. Lane. SPIE, 2004. http://dx.doi.org/10.1117/12.559688.
Повний текст джерела