Статті в журналах з теми "PECVD silicon carbide and silicon nitride"
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ILIESCU, Ciprian. "A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS." Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, no. 1-2 (2021): 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.
Повний текст джерелаCho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.
Повний текст джерелаAbdelal, Aysegul, and Peter Mascher. "(Invited) Comparison of Compositional, Optical and Mechanical Properties of Sicn Thin Films Prepared By Ecr-PECVD with Different Hydrocarbon Precursors." ECS Meeting Abstracts MA2022-02, no. 18 (October 9, 2022): 874. http://dx.doi.org/10.1149/ma2022-0218874mtgabs.
Повний текст джерелаFang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis, and Alexey Vert. "Thin Film Multichip Packaging for High Temperature Digital Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.
Повний текст джерелаGalvão, Nierlly, Marciel Guerino, Tiago Campos, Korneli Grigorov, Mariana Fraga, Bruno Rodrigues, Rodrigo Pessoa, Julien Camus, Mohammed Djouadi, and Homero Maciel. "The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering." Micromachines 10, no. 3 (March 22, 2019): 202. http://dx.doi.org/10.3390/mi10030202.
Повний текст джерелаKnowles, Kevin M., and Servet Turan. "Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites." Journal of the European Ceramic Society 22, no. 9-10 (September 2002): 1587–600. http://dx.doi.org/10.1016/s0955-2219(01)00481-2.
Повний текст джерелаBiasini, V., S. Guicciardi, and A. Bellosi. "Silicon nitride-silicon carbide composite materials." International Journal of Refractory Metals and Hard Materials 11, no. 4 (January 1992): 213–21. http://dx.doi.org/10.1016/0263-4368(92)90048-7.
Повний текст джерелаKodama, Hironori, Hiroshi Sakamoto, and Tadahiko Miyoshi. "Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 72, no. 4 (April 1989): 551–58. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06174.x.
Повний текст джерелаPruiti, Natale G., Charalambos Klitis, Christopher Gough, Stuart May, and Marc Sorel. "Thermo-optic coefficient of PECVD silicon-rich silicon nitride." Optics Letters 45, no. 22 (November 12, 2020): 6242. http://dx.doi.org/10.1364/ol.403357.
Повний текст джерелаGreim, J., A. Lipp, and K. Bettles. "Silicon Nitride and Silicon Carbide Turbocharger Rotors." Materials Science Forum 34-36 (January 1991): 623–27. http://dx.doi.org/10.4028/www.scientific.net/msf.34-36.623.
Повний текст джерелаBaril, D., S. P. Tremblay, and M. Fiset. "Silicon carbide platelet-reinforced silicon nitride composites." Journal of Materials Science 28, no. 20 (October 1993): 5486–94. http://dx.doi.org/10.1007/bf00367819.
Повний текст джерелаLiu, Bangwu, Sihua Zhong, Jinhu Liu, Yang Xia, and Chaobo Li. "Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/971093.
Повний текст джерелаHuran, J., B. Zaťko, I. Hotový, J. Pezoldt, A. P. Kobzev, and N. I. Balalykin. "PECVD silicon carbide deposited at different temperature." Czechoslovak Journal of Physics 56, S2 (October 2006): B1207—B1211. http://dx.doi.org/10.1007/s10582-006-0351-8.
Повний текст джерелаJusto, João F., and Cesar R. S. da Silva. "Modelling Amorphous Materials: Silicon Nitride and Silicon Carbide." Defect and Diffusion Forum 206-207 (July 2002): 19–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.206-207.19.
Повний текст джерелаTakakura, Eiju, and Susumu Horibe. "Indentation Fatigue of Silicon Carbide and Silicon Nitride." Journal of the Japan Institute of Metals 54, no. 5 (1990): 611–16. http://dx.doi.org/10.2320/jinstmet1952.54.5_611.
Повний текст джерелаTakakura, Eiju, and Susumu Horibe. "Indentation Fatigue of Silicon Carbide and Silicon Nitride." Materials Transactions, JIM 32, no. 5 (1991): 495–500. http://dx.doi.org/10.2320/matertrans1989.32.495.
Повний текст джерелаMunro, R. G., and S. J. Dapkunas. "Corrosion characteristics of silicon carbide and silicon nitride." Journal of Research of the National Institute of Standards and Technology 98, no. 5 (September 1993): 607. http://dx.doi.org/10.6028/jres.098.040.
Повний текст джерелаLiang, Xin, Changlian Chen, Shicong Zhou, Man Xu, Jiayou Ji, Zhiliang Huang, Gangqiang Ding, and Hongliang Zhang. "Silicon Carbide Films Prepared by Silicon Nitride Evaporation." IOP Conference Series: Materials Science and Engineering 678 (November 27, 2019): 012162. http://dx.doi.org/10.1088/1757-899x/678/1/012162.
Повний текст джерелаAgrafiotis, Christos C., Jerzy Lis, Jan A. Puszynski, and Vladimir Hlavacek. "Combustion Synthesis of Silicon Nitride-Silicon Carbide Composites." Journal of the American Ceramic Society 73, no. 11 (November 1990): 3514–17. http://dx.doi.org/10.1111/j.1151-2916.1990.tb06488.x.
Повний текст джерелаKargin, Yu F., S. N. Ivicheva, A. S. Lysenkov, N. A. Alad’ev, S. V. Kutsev, and L. I. Shvorneva. "Preparation of silicon carbide whiskers from silicon nitride." Inorganic Materials 45, no. 7 (June 28, 2009): 758–66. http://dx.doi.org/10.1134/s0020168509070103.
Повний текст джерелаWang, E. Y., X. Pan, J. P. Mansfield, T. Kennedy, and S. Hampshire. "TEM Studies of Silicon Nitride-Silicon Carbide Nanocomposites." Microscopy and Microanalysis 3, S2 (August 1997): 411–12. http://dx.doi.org/10.1017/s1431927600008941.
Повний текст джерелаEdwards, D. P., Barry C. Muddle, and R. H. J. Hannink. "Microstructural Characterisation of Silicon Nitride-Bonded Silicon Carbide." Key Engineering Materials 89-91 (August 1993): 417–22. http://dx.doi.org/10.4028/www.scientific.net/kem.89-91.417.
Повний текст джерелаKennedy, T., Stuart Hampshire, Marc Poorteman, and F. Cambier. "Fabrication of Silicon Nitride-Silicon Carbide Nanocomposite Ceramics." Key Engineering Materials 99-100 (March 1995): 257–64. http://dx.doi.org/10.4028/www.scientific.net/kem.99-100.257.
Повний текст джерелаReddy, N. Kishan. "Electrical behaviour of silicon nitride-silicon carbide composites." Journal of Materials Science Letters 9, no. 12 (December 1990): 1393–94. http://dx.doi.org/10.1007/bf00721593.
Повний текст джерелаScheeper, P. R., J. A. Voorthuyzen, and P. Bergveld. "PECVD silicon nitride diaphragms for condenser microphones." Sensors and Actuators B: Chemical 4, no. 1-2 (May 1991): 79–84. http://dx.doi.org/10.1016/0925-4005(91)80180-r.
Повний текст джерелаYong Zhong Hu, G. R. Yang, T. Paul Chow, and Ronald J. Gutmann. "Chemical-mechanical polishing of PECVD silicon nitride." Thin Solid Films 290-291 (December 1996): 453–55. http://dx.doi.org/10.1016/s0040-6090(96)09032-3.
Повний текст джерелаLiu, Ze Wen, Tian Ruo Zhang, Li Tian Liu, and Zhi Jian Li. "Realization of Silicon Nitride Template for Nanoimprint: A First Result." Solid State Phenomena 121-123 (March 2007): 669–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.669.
Повний текст джерелаJones, Mark Ian, Ron Etzion, Jim Metson, You Zhou, Hideki Hyuga, Yuichi Yoshizawa, and Kiyoshi Hirao. "Reaction Bonded Silicon Nitride - Silicon Carbide and SiAlON - Silicon Carbide Refractories for Aluminium Smelting." Key Engineering Materials 403 (December 2008): 235–38. http://dx.doi.org/10.4028/www.scientific.net/kem.403.235.
Повний текст джерелаZaytsev, S. V., E. A. Doroganov, V. A. Doroganov, E. I. Evtushenko, and O. К. Sysa. "Silicon and silicon carbide-based artificial ceramic binders for nitride bonded silicon carbide refractories." NOVYE OGNEUPORY (NEW REFRACTORIES), no. 9 (October 27, 2019): 25–30. http://dx.doi.org/10.17073/1683-4518-2019-9-25-30.
Повний текст джерелаSun, Wenyue, Zhiliang Huang, Changlian Chen, and Song Chen. "Preparation of Silicon Carbide Film by Composite Sintering of Silicon Nitride and Silicon Carbide." Journal of Physics: Conference Series 2390, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2390/1/012001.
Повний текст джерелаKishore, R., S. N. Singh, and B. K. Das. "PECVD grown silicon nitride AR coatings on polycrystalline silicon solar cells." Solar Energy Materials and Solar Cells 26, no. 1-2 (March 1992): 27–35. http://dx.doi.org/10.1016/0927-0248(92)90123-7.
Повний текст джерелаSong, Yumin, Jun-Kyo Jeong, Seung-Dong Yang, Deok-Min Park, Yun-mi Kang, and Ga-Won Lee. "Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model." Materials Express 11, no. 9 (September 1, 2021): 1615–18. http://dx.doi.org/10.1166/mex.2021.2067.
Повний текст джерелаMeziani, Samir, Abderrahmane Moussi, Linda Mahiou, and Ratiba Outemzabet. "Compositional analysis of silicon oxide/silicon nitride thin films." Materials Science-Poland 34, no. 2 (June 1, 2016): 315–21. http://dx.doi.org/10.1515/msp-2016-0057.
Повний текст джерелаIliescu, Ciprian, Bangtao Chen, Daniel P. Poenar, and Yong Yeow Lee. "PECVD amorphous silicon carbide membranes for cell culturing." Sensors and Actuators B: Chemical 129, no. 1 (January 2008): 404–11. http://dx.doi.org/10.1016/j.snb.2007.08.043.
Повний текст джерелаMitomo, Mamoru, and Günter Petzow. "Recent Progress in Silicon Nitride and Silicon Carbide Ceramics." MRS Bulletin 20, no. 2 (February 1995): 19–22. http://dx.doi.org/10.1557/s0883769400049162.
Повний текст джерелаWOO, Sang Kook, In Sub HAN, Gyeong-Geun RI, Sung-Chul PARK, Kurn CHO, and Byung-Koog JANG. "Hot-Corrosion Behavior of Silicon Nitride-Bonded Silicon Carbide." Journal of the Ceramic Society of Japan 109, no. 1265 (2001): 23–28. http://dx.doi.org/10.2109/jcersj.109.23.
Повний текст джерелаSATO, Tadao, Toshiharu SUGIURA, and Kazuyoshi SHIMAKAGE. "Microwave Joining of Ceramics, Silicon Nitride and Silicon Carbide." Journal of the Ceramic Society of Japan 101, no. 1172 (1993): 422–27. http://dx.doi.org/10.2109/jcersj.101.422.
Повний текст джерелаBaldacim, Sandro Aparecido, Claudinei dos Santos, Olivério Moreira Macedo Silva, and Cosme Roberto Moreira Silva. "Silicon Carbide Whiskers Interference on Silicon Nitride Based Composite." Materials Science Forum 591-593 (August 2008): 543–47. http://dx.doi.org/10.4028/www.scientific.net/msf.591-593.543.
Повний текст джерелаNarushima, T., T. Goto, T. Hirai, and Y. Iguchi. "High-Temperature Oxidation of Silicon Carbide and Silicon Nitride." Materials Transactions, JIM 38, no. 10 (1997): 821–35. http://dx.doi.org/10.2320/matertrans1989.38.821.
Повний текст джерелаReddy, Navuri Kishan, and Joydeb Mukerji. "Silicon Nitride-Silicon Carbide Refractories Produced by Reaction Bonding." Journal of the American Ceramic Society 74, no. 5 (May 1991): 1139–41. http://dx.doi.org/10.1111/j.1151-2916.1991.tb04356.x.
Повний текст джерелаKishan Reddy, N., and J. Mukerji. "Preparation and characterization of silicon nitride-silicon carbide composites." Bulletin of Materials Science 13, no. 3 (June 1990): 173–78. http://dx.doi.org/10.1007/bf02744943.
Повний текст джерелаTanaka, Hidehiko, Peter Greil, and Günter Petzow. "Sintering and strength of silicon nitride-silicon carbide composites." International Journal of High Technology Ceramics 1, no. 2 (January 1985): 107–18. http://dx.doi.org/10.1016/0267-3762(85)90002-5.
Повний текст джерелаWeinmann, M., A. Zern, and F. Aldinger. "Stoichiometric Silicon Nitride/Silicon Carbide Composites from Polymeric Precursors." Advanced Materials 13, no. 22 (November 2001): 1704–8. http://dx.doi.org/10.1002/1521-4095(200111)13:22<1704::aid-adma1704>3.0.co;2-8.
Повний текст джерелаTuran, Servet, and Kevin M. Knowles. "Interphase boundaries between hexagonal boron nitride and beta silicon nitride in silicon nitride-silicon carbide particulate composites." Journal of the European Ceramic Society 17, no. 15-16 (January 1997): 1849–54. http://dx.doi.org/10.1016/s0955-2219(97)00070-8.
Повний текст джерелаVeltri, Richard D., and Francis S. Galasso. "Chemical-Vapor-Infiltrated Silicon Nitride, Boron Nitride, and Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 73, no. 7 (July 1990): 2137–40. http://dx.doi.org/10.1111/j.1151-2916.1990.tb05288.x.
Повний текст джерелаGatabi, Iman Rezanezhad, Derek W. Johnson, Jung Hwan Woo, Jonathan W. Anderson, Mary R. Coan, Edwin L. Piner, and Harlan Rusty Harris. "PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures." IEEE Transactions on Electron Devices 60, no. 3 (March 2013): 1082–87. http://dx.doi.org/10.1109/ted.2013.2242075.
Повний текст джерелаGhosh, S., P. K. Dutta, and D. N. Bose. "Neural network modeling of PECVD silicon nitride films." Materials Science in Semiconductor Processing 2, no. 1 (April 1999): 1–11. http://dx.doi.org/10.1016/s1369-8001(98)00023-7.
Повний текст джерелаKim, Byungwhan, Dong Won Kim, and Seung Soo Han. "Refraction properties of PECVD of silicon nitride film." Vacuum 72, no. 4 (January 2004): 385–92. http://dx.doi.org/10.1016/j.vacuum.2003.08.012.
Повний текст джерелаReynes, Brigitte, and Jean Claude Bruyère. "High-density silicon nitride thin film in PECVD." Sensors and Actuators A: Physical 32, no. 1-3 (April 1992): 303–6. http://dx.doi.org/10.1016/0924-4247(92)80003-l.
Повний текст джерелаKhaliq, M. A., Q. A. Shams, W. D. Brown, and H. A. Naseem. "Physical properties of memory quality PECVD silicon nitride." Journal of Electronic Materials 17, no. 5 (September 1988): 355–59. http://dx.doi.org/10.1007/bf02652118.
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