Статті в журналах з теми "Peak-to-Valley Current Ratio"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Peak-to-Valley Current Ratio".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Oobo, Takashi, Riichiro Takemura, Michihiko Suhara, Yasuyuki Miyamoto, and Kazuhito Furuya. "High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes." Japanese Journal of Applied Physics 36, Part 1, No. 8 (August 15, 1997): 5079–80. http://dx.doi.org/10.1143/jjap.36.5079.
Повний текст джерелаHuang, C. I., M. J. Paulus, C. A. Bozada, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, and M. E. Cheney. "AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio." Applied Physics Letters 51, no. 2 (July 13, 1987): 121–23. http://dx.doi.org/10.1063/1.98588.
Повний текст джерелаJiang, Zhi, Yiqi Zhuang, Cong Li, and Ping Wang. "Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio." Journal of Electronic Materials 46, no. 2 (November 3, 2016): 1088–92. http://dx.doi.org/10.1007/s11664-016-5021-4.
Повний текст джерелаDuschl, R., O. G. Schmidt, G. Reitemann, E. Kasper, and K. Eberl. "High room temperature peak-to-valley current ratio in Si based Esaki diodes." Electronics Letters 35, no. 13 (1999): 1111. http://dx.doi.org/10.1049/el:19990728.
Повний текст джерелаZhang, Baoqing, Liuyun Yang, Ding Wang, Patrick Quach, Shanshan Sheng, Duo Li, Tao Wang, et al. "Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon." Applied Physics Letters 121, no. 19 (November 7, 2022): 192107. http://dx.doi.org/10.1063/5.0127379.
Повний текст джерелаWang, Y. H., H. C. Wei, and M. P. Houng. "Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure." Journal of Applied Physics 73, no. 11 (June 1993): 7990–92. http://dx.doi.org/10.1063/1.353913.
Повний текст джерелаReddy, V. K., A. J. Tsao, and D. P. Neikirk. "High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes." Electronics Letters 26, no. 21 (1990): 1742. http://dx.doi.org/10.1049/el:19901119.
Повний текст джерелаPotter, Robert C., Amir A. Lakhani, Dana Beyea, and Harry Hier. "Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes." Journal of Applied Physics 63, no. 12 (June 15, 1988): 5875–76. http://dx.doi.org/10.1063/1.340278.
Повний текст джерелаDuong, Ngoc Thanh, Seungho Bang, Seung Mi Lee, Dang Xuan Dang, Dong Hoon Kuem, Juchan Lee, Mun Seok Jeong, and Seong Chu Lim. "Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure." Nanoscale 10, no. 26 (2018): 12322–29. http://dx.doi.org/10.1039/c8nr01711e.
Повний текст джерелаLIANG, Dong-Shong, Kwang-Jow GAN, Cheng-Chi TAI, and Cher-Shiung TSAI. "Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio." IEICE Transactions on Electronics E92-C, no. 5 (2009): 635–38. http://dx.doi.org/10.1587/transele.e92.c.635.
Повний текст джерелаLee, Sejoon, Youngmin Lee, Emil B. Song, and Toshiro Hiramoto. "Modulation of peak-to-valley current ratio of Coulomb blockade oscillations in Si single hole transistors." Applied Physics Letters 103, no. 10 (September 2, 2013): 103502. http://dx.doi.org/10.1063/1.4819442.
Повний текст джерелаOehme, Michael, Marko Sarlija, Daniel Hahnel, Mathias Kaschel, Jens Werner, E. Kasper, and J. Schulze. "Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)." IEEE Transactions on Electron Devices 57, no. 11 (November 2010): 2857–63. http://dx.doi.org/10.1109/ted.2010.2068395.
Повний текст джерелаAggarwal, R. J., and C. G. Fonstad. "High peak-to-valley current ratio In0.22Ga0.78As/AlAs RTDs on GaAs using relaxed InxGa1-xAs buffers." Electronics Letters 31, no. 1 (January 5, 1995): 75–77. http://dx.doi.org/10.1049/el:19950002.
Повний текст джерелаWang, Wei, Hao Sun, Teng Teng, and Xiaowei Sun. "High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter." Journal of Semiconductors 33, no. 12 (December 2012): 124002. http://dx.doi.org/10.1088/1674-4926/33/12/124002.
Повний текст джерелаKannan, V., K. R. Rajesh, M. R. Kim, Y. S. Chae, and J. K. Rhee. "Large current peak-to-valley ratio observed in CdSe quantum dot/MEH-PPV based nanocomposite heterostructure." Applied Physics A 102, no. 3 (January 4, 2011): 611–14. http://dx.doi.org/10.1007/s00339-010-6162-6.
Повний текст джерелаIpsita, Sushree, P. K. Mahapatra, and P. Panchadhyayee. "Optimum device parameters to attain the highest peak to valley current ratio (PVCR) in resonant tunneling diodes (RTD)." Physica B: Condensed Matter 611 (June 2021): 412788. http://dx.doi.org/10.1016/j.physb.2020.412788.
Повний текст джерелаShin, Sunhae, In Man Kang, and Kyung Rok Kim. "Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics." JSTS:Journal of Semiconductor Technology and Science 13, no. 6 (December 31, 2013): 546–50. http://dx.doi.org/10.5573/jsts.2013.13.6.546.
Повний текст джерелаDay, D. J., Rui Q. Yang, Jian Lu, and J. M. Xu. "Experimental demonstration of resonant interband tunnel diode with room temperature peak‐to‐valley current ratio over 100." Journal of Applied Physics 73, no. 3 (February 1993): 1542–44. http://dx.doi.org/10.1063/1.353231.
Повний текст джерелаSöderström, Jan, and Thorwald G. Andersson. "resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height." Superlattices and Microstructures 5, no. 1 (January 1989): 109–13. http://dx.doi.org/10.1016/0749-6036(89)90077-3.
Повний текст джерелаTsujino, S., N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grützmacher, Y. Azuma, and K. Nakajima. "SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio." Applied Physics Letters 91, no. 3 (July 16, 2007): 032104. http://dx.doi.org/10.1063/1.2756363.
Повний текст джерелаFang, Y. K., K. H. Chen, K. S. Wu, C. R. Liu, and J. D. Hwang. "An amorphous silicon/silicon‐carbide double barrier structure with 2.66 peak to valley current ratio negative resistance." Journal of Applied Physics 72, no. 3 (August 1992): 1178–79. http://dx.doi.org/10.1063/1.351798.
Повний текст джерелаHsu, Che-Wei, Quang Ho Luc, hua Lun Ko, Ping Huang, Jing Yuan Wu, Nhan Ai Tran, and Edward Yi Chang. "Superior Peak to Valley Current Ratio of the InAs/Gasb Core-Shell Nanowires for Tunnel Diode Application." ECS Meeting Abstracts MA2020-02, no. 51 (November 23, 2020): 3835. http://dx.doi.org/10.1149/ma2020-02513835mtgabs.
Повний текст джерелаAfzal, Amir Muhammad, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Thamer Alomayri, Ghulam Dastgeer, Yasir Javed, Naveed Akhter Shad, et al. "High performance and gate-controlled GeSe/HfS2 negative differential resistance device." RSC Advances 12, no. 3 (2022): 1278–86. http://dx.doi.org/10.1039/d1ra07276e.
Повний текст джерелаSaraiva-Souza, Aldilene, Manuel Smeu, José Gadelha da Silva Filho, Eduardo Costa Girão, and Hong Guo. "Tuning the electronic and quantum transport properties of nitrogenated holey graphene nanoribbons." Journal of Materials Chemistry C 5, no. 45 (2017): 11856–66. http://dx.doi.org/10.1039/c7tc03424e.
Повний текст джерелаShao, Zhi-An, Wolfgang Porod, and Craig S. Lent. "2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices." VLSI Design 6, no. 1-4 (January 1, 1998): 131–35. http://dx.doi.org/10.1155/1998/97564.
Повний текст джерелаYan-Kuin Su, Jia-Rong Chang, Yan-Ten Lu, Chuing-Liang Lin, Kuo-Ming Wu, and Zheng-Xian Wu. "Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature." IEEE Electron Device Letters 21, no. 4 (April 2000): 146–48. http://dx.doi.org/10.1109/55.830963.
Повний текст джерелаSun, Yiming, Wei Gao, Xueping Li, Congxin Xia, Hongyu Chen, Li Zhang, Dongxiang Luo, Weijun Fan, Nengjie Huo, and Jingbo Li. "Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions." Journal of Materials Chemistry C 9, no. 32 (2021): 10372–80. http://dx.doi.org/10.1039/d1tc02497c.
Повний текст джерелаRamesh, Anisha, Paul R. Berger, and Roger Loo. "High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition." Applied Physics Letters 100, no. 9 (February 27, 2012): 092104. http://dx.doi.org/10.1063/1.3684834.
Повний текст джерелаSoderstrom, J. R., D. H. Chow, and T. C. McGill. "InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devices." IEEE Electron Device Letters 11, no. 1 (January 1990): 27–29. http://dx.doi.org/10.1109/55.46920.
Повний текст джерелаChen, D. Y., Y. Sun, Y. J. He, L. Xu, and J. Xu. "Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature." Journal of Applied Physics 115, no. 4 (January 28, 2014): 043703. http://dx.doi.org/10.1063/1.4861737.
Повний текст джерелаSugaya, Takeyoshi, Kee-Youn Jang, Cheol-Koo Hahn, Mutsuo Ogura, Kazuhiro Komori, Akito Shinoda, and Kenji Yonei. "Enhanced peak-to-valley current ratio in InGaAs∕InAlAs trench-type quantum-wire negative differential resistance field-effect transistors." Journal of Applied Physics 97, no. 3 (February 2005): 034507. http://dx.doi.org/10.1063/1.1851595.
Повний текст джерелаInata, Tsuguo, Shunichi Muto, Yoshiaki Nakata, Shigehiko Sasa, Toshio Fujii, and Satoshi Hiyamizu. "A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature." Japanese Journal of Applied Physics 26, Part 2, No. 8 (August 20, 1987): L1332—L1334. http://dx.doi.org/10.1143/jjap.26.l1332.
Повний текст джерелаJiun-Tsuen Lai and J. Y. Lee. "Ultrahigh and controllable drain current peak-to-valley ratio in negative resistance field-effect transistors with a strained InGaAs channel." IEEE Electron Device Letters 15, no. 9 (September 1994): 333–35. http://dx.doi.org/10.1109/55.311125.
Повний текст джерелаTsai, H. H., Y. K. Su, H. H. Lin, R. L. Wang, and T. L. Lee. "P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature." IEEE Electron Device Letters 15, no. 9 (September 1994): 357–59. http://dx.doi.org/10.1109/55.311133.
Повний текст джерелаYang, Chih-Chin, Kuang-Chih Huang, and Yan-Kuin Su. "High Peak-to-Valley Current Ratio GaAs/InGaAs/InAs Double Stepped Quantum Well Resonant Interband Tunneling Diodes at Room Temperature." Japanese Journal of Applied Physics 35, Part 2, No. 5A (May 1, 1996): L535—L537. http://dx.doi.org/10.1143/jjap.35.l535.
Повний текст джерелаNiu, Ping Juan, Hai Rong Hu, Hong Wei Liu, Wen Xin Wang, and Xun Zhong Shang. "Study on Opto-Electronic Integration of Resonant Tunnelling Diodes." Solid State Phenomena 121-123 (March 2007): 533–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.533.
Повний текст джерелаShahhoseini, Ali, Samane Ghorbanalipour, and Rahim Faez. "Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified I-V Characteristic." Applied Mechanics and Materials 110-116 (October 2011): 5464–70. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.5464.
Повний текст джерелаYarn, K. F. "Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD." Active and Passive Electronic Components 25, no. 3 (2002): 245–48. http://dx.doi.org/10.1080/08827510213497.
Повний текст джерелаYang, Rui Q., Jian Lu, J. M. Xu, and D. J. Day. "Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1013–16. http://dx.doi.org/10.1139/p92-162.
Повний текст джерелаShin, Sunhae, and Kyung Rok Kim. "Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications." Japanese Journal of Applied Physics 54, no. 6S1 (April 30, 2015): 06FG07. http://dx.doi.org/10.7567/jjap.54.06fg07.
Повний текст джерелаQiang Li, Yu Han, Xing Lu, and Kei May Lau. "GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4." IEEE Electron Device Letters 37, no. 1 (January 2016): 24–27. http://dx.doi.org/10.1109/led.2015.2499603.
Повний текст джерелаZhang, HePeng, JunShuai Xue, ZhiPeng Sun, LanXing Li, JiaJia Yao, Fang Liu, XueYan Yang, et al. "1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate." Applied Physics Letters 119, no. 15 (October 11, 2021): 153506. http://dx.doi.org/10.1063/5.0064790.
Повний текст джерелаChang-Luen Wu, Wei-Chou Hsu, Hir-Ming Shieh, and Ming-Shang Tsai. "A novel /spl delta/-doped GaAs/lnGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability." IEEE Electron Device Letters 16, no. 3 (March 1995): 112–14. http://dx.doi.org/10.1109/55.363241.
Повний текст джерелаMehdi, Imran, and George Haddad. "Lattice matched and pseudomorphic In0.53Ga0.47As/InxAl1−xAs resonant tunneling diodes with high current peak‐to‐valley ratio for millimeter‐wave power generation." Journal of Applied Physics 67, no. 5 (March 1990): 2643–46. http://dx.doi.org/10.1063/1.345472.
Повний текст джерелаFang, Y. K., K. H. Chen, C. R. Liu, J. D. Hwang, K. S. Wu, and W. R. Liou. "Observation of very high peak-to-valley current ratio (≥9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer." IEEE Journal of Quantum Electronics 30, no. 10 (1994): 2293–96. http://dx.doi.org/10.1109/3.328596.
Повний текст джерелаYang, Maolong, Yao Lu, Qiancui Zhang, Zhao Han, Yichi Zhang, Maliang Liu, Ningning Zhang, Huiyong Hu, and Liming Wang. "Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction." Applied Physics Letters 121, no. 4 (July 25, 2022): 043501. http://dx.doi.org/10.1063/5.0097390.
Повний текст джерелаMa, C. L. F., M. J. Deen, and R. H. S. Hardy. "Excess currents as a result of trap-assisted tunneling in double barrier resonant tunneling diodes." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1005–12. http://dx.doi.org/10.1139/p92-161.
Повний текст джерелаLaruelle, F., and G. Faini. "Thermally desactivated resonant current in high peak to valley current ratio (69:1) GaAs/GaAlAs resonant tunneling structures: A spectroscopic view of the emitter density of state." Solid-State Electronics 37, no. 4-6 (April 1994): 987–90. http://dx.doi.org/10.1016/0038-1101(94)90342-5.
Повний текст джерелаSyzranov, V. S., O. A. Klimenko, A. S. Ermolov, I. P. Kazakov, S. S. Shmelev, V. I. Egorkin, and V. N. Murzin. "Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature." Bulletin of the Lebedev Physics Institute 40, no. 8 (August 2013): 240–43. http://dx.doi.org/10.3103/s106833561308006x.
Повний текст джерелаYang, Zhang, Zeng Yi-Ping, Ma Long, Wang Bao-Qiang, Zhu Zhan-Ping, Wang Liang-Chen, and Yang Fu-Hua. "Nanoelectronic devices—resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature." Chinese Physics 15, no. 6 (May 31, 2006): 1335–38. http://dx.doi.org/10.1088/1009-1963/15/6/034.
Повний текст джерела