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Статті в журналах з теми "Peak-to-Valley Current Ratio"
Oobo, Takashi, Riichiro Takemura, Michihiko Suhara, Yasuyuki Miyamoto, and Kazuhito Furuya. "High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes." Japanese Journal of Applied Physics 36, Part 1, No. 8 (August 15, 1997): 5079–80. http://dx.doi.org/10.1143/jjap.36.5079.
Повний текст джерелаHuang, C. I., M. J. Paulus, C. A. Bozada, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, and M. E. Cheney. "AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio." Applied Physics Letters 51, no. 2 (July 13, 1987): 121–23. http://dx.doi.org/10.1063/1.98588.
Повний текст джерелаJiang, Zhi, Yiqi Zhuang, Cong Li, and Ping Wang. "Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio." Journal of Electronic Materials 46, no. 2 (November 3, 2016): 1088–92. http://dx.doi.org/10.1007/s11664-016-5021-4.
Повний текст джерелаDuschl, R., O. G. Schmidt, G. Reitemann, E. Kasper, and K. Eberl. "High room temperature peak-to-valley current ratio in Si based Esaki diodes." Electronics Letters 35, no. 13 (1999): 1111. http://dx.doi.org/10.1049/el:19990728.
Повний текст джерелаZhang, Baoqing, Liuyun Yang, Ding Wang, Patrick Quach, Shanshan Sheng, Duo Li, Tao Wang, et al. "Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon." Applied Physics Letters 121, no. 19 (November 7, 2022): 192107. http://dx.doi.org/10.1063/5.0127379.
Повний текст джерелаWang, Y. H., H. C. Wei, and M. P. Houng. "Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure." Journal of Applied Physics 73, no. 11 (June 1993): 7990–92. http://dx.doi.org/10.1063/1.353913.
Повний текст джерелаReddy, V. K., A. J. Tsao, and D. P. Neikirk. "High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes." Electronics Letters 26, no. 21 (1990): 1742. http://dx.doi.org/10.1049/el:19901119.
Повний текст джерелаPotter, Robert C., Amir A. Lakhani, Dana Beyea, and Harry Hier. "Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes." Journal of Applied Physics 63, no. 12 (June 15, 1988): 5875–76. http://dx.doi.org/10.1063/1.340278.
Повний текст джерелаDuong, Ngoc Thanh, Seungho Bang, Seung Mi Lee, Dang Xuan Dang, Dong Hoon Kuem, Juchan Lee, Mun Seok Jeong, and Seong Chu Lim. "Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure." Nanoscale 10, no. 26 (2018): 12322–29. http://dx.doi.org/10.1039/c8nr01711e.
Повний текст джерелаLIANG, Dong-Shong, Kwang-Jow GAN, Cheng-Chi TAI, and Cher-Shiung TSAI. "Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio." IEICE Transactions on Electronics E92-C, no. 5 (2009): 635–38. http://dx.doi.org/10.1587/transele.e92.c.635.
Повний текст джерелаДисертації з теми "Peak-to-Valley Current Ratio"
Tsai, Hann-Huei, and 蔡瀚輝. "The Study and Fabrication of High Peak-to-Valley Current Ratio Negative Differential Resistance Microwave Devices." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/14236358384458399026.
Повний текст джерела國立成功大學
電機工程研究所
82
Microwave devices play an important role in wireless The high frequency oscillator is a significant element of devices. The tranditional Esaki tunnel diodes were widely used in applications. But the operational frequency is limited by the capacitance. Recently, the high quality heterojunctions and microstructures are possible with the advance of the growth techniques. The double barrier resonant tunneling diodes have a deal of interests in these years. Although they can operate at THz, the thermal current is large due to the lower barrier The peak-to-valley current ratio (PVCR) of the double barrier tunneling diode is therefore small then it of the tranditional diode. The resonant interband tunneling (RIT) structure combines advantages of these two devices. Hence, it can operate at high frequency with low excess current. First, we study the transmission coefficient and the current- voltage characteristics based on the k.p theory. The physics of this device are investigated. The optimum parameters of the will be obtained by considering the heavily doped effect. The GaAs/ InGaAs and InAlAs/InGaAs double quantum well RIT diodes have grown. The PVCR of GaAs/InGaAs RIT diode is about 3. For the sake the intrinsic property of the InAlAs/InGaAs material system, the of InAlAs/InGaAs is better and over 140 at room temperature. As know, this is the highest room temperature PVCR ever reported in tunneling devices. Moreover, the influence of device with the central barrier thickness has also been studied. The value is 20A. We study two kinds of delta-doping induced RIT finally. One was PIN interband tunneling diode and the other is single barrier RIT diode. The PVCRs of these two structures are 5 3, respectively. These values are comparable with the the similar diagram, such as InAs/AlSb/GaSb and InAs/ AlSb/GaSb/AlSb/InAs RIT diodes, etc.
Mahajan, Mehak. "Charge Density Wave-driven Carrier Transport in Layered Heterostructures." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5850.
Повний текст джерелаЧастини книг з теми "Peak-to-Valley Current Ratio"
Vanbésien, O., R. Bouregba, P. Mounaix, and D. Lippens. "Temperature Dependence of Peak to Valley Current Ratio in Resonant Tunneling Double Barriers." In Resonant Tunneling in Semiconductors, 107–16. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3846-2_10.
Повний текст джерелаТези доповідей конференцій з теми "Peak-to-Valley Current Ratio"
Wang, Wei, Hao Sun, Lingyun Li, and Xiaowei Sun. "InP-based resonant tunneling diode with high peak-to-valley current ratio for THz application." In 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2012). IEEE, 2012. http://dx.doi.org/10.1109/irmmw-thz.2012.6380445.
Повний текст джерелаShin, Sunhae, Min Woo Ryu, and Kyung Rok Kim. "Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure." In 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243340.
Повний текст джерелаInata, Tsuguo, Shunichi Muto, Toshio Fujii, and Satoshi Hiyamizu. "Extremely High Peak-to-Valley Current Ratio Obtained in an InAlAs/InGaAs Resonant Tunneling Barrier Structure Grown by MBE." In 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.d-9-2.
Повний текст джерелаNagase, M., T. Takahashi, and M. Shimizu. "GaN/AlN Resonant Tunneling Diode with High Peak-to-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.j-6-5.
Повний текст джерелаKanazawa, Tohru, Atsushi Morosawa, Masahiro Watanabe, and Masahiro Asada. "High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy." In 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.g-1-7.
Повний текст джерелаShinkawa, A., M. Wakiya, Y. Maeda, T. Tsukamoto, and Y. Suda. "Hole-Tunneling Si1-xGex/Si ASDQW RTD with High Resonant Current and High Peak-to-Valley Current Ratio." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-9-08.
Повний текст джерелаTonegawa, H., Y. Kumagai, S. Fukuyama, K. Hirose, and M. Watanabe. "Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.a-3-05.
Повний текст джерелаGlytsis, Elias N., Thomas K. Gaylord, and Kevin F. Brennan. "Current-voltage characteristics and space-charge effects in semiconductor electron-wave filter/emitters." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fz7.
Повний текст джерелаBurg, G. W., B. Fallahazad, K. Kim, N. Prasad, Takashi Taniguchi, Kenji Watanabe, L. F. Register, and E. Tutuc. "Double bilayer graphene-WSe2 resonant tunneling heterostructures with high interlayer current densities and peak-to-valley ratios." In 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999393.
Повний текст джерелаRamesh, Anisha, Paul R. Berger, Bastien Douhard, Wilfried Vandervorst, and Roger Loo. "200-mm CVD Grown Si/SiGe Resonant Interband Tunnel Diodes Optimized for High Peak-to-Valley Current Ratios." In 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222481.
Повний текст джерела