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Добірка наукової літератури з теми "Pe(ald)"

Автор: Grafiati
Опубліковано: 12 жовтня 2024

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Статті в журналах з теми "Pe(ald)"

1

Onaya, Takashi, and Koji Kita. "(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors." ECS Transactions 113, no. 2 (May 17, 2024): 51–59. http://dx.doi.org/10.1149/11302.0051ecst.

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Анотація:
We fabricated 400°C-annealed TiN/HfxZr1−xO2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H2O and O2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. Thus, the MFM capacitor with the PE-ALD film showed less degradation of switching polarization during field cycling compared with the TH-ALD case, because an O-rich-IL should prevent the interface reaction and formation of additional oxygen vacancies in the PE-ALD film during field cycling. Based on these results, it is important to consider the selection of an ALD oxidant gas for the fabrication of HZO-based MFM capacitors.
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2

Haeberle, Jörg, Karsten Henkel, Hassan Gargouri, Franziska Naumann, Bernd Gruska, Michael Arens, Massimo Tallarida, and Dieter Schmeißer. "Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films." Beilstein Journal of Nanotechnology 4 (November 8, 2013): 732–42. http://dx.doi.org/10.3762/bjnano.4.83.

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We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.
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3

Van Daele, Michiel, Christophe Detavernier, and Jolien Dendooven. "Surface species during ALD of platinum observed with in situ reflection IR spectroscopy." Physical Chemistry Chemical Physics 20, no. 39 (2018): 25343–56. http://dx.doi.org/10.1039/c8cp03585g.

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Анотація:
Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the precursor and O2 gas or O2 plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.
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4

Mione, M. A., V. Vandalon, W. M. M. Kessels, and F. Roozeboom. "Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy." Journal of Vacuum Science & Technology A 40, no. 6 (December 2022): 062407. http://dx.doi.org/10.1116/6.0002158.

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Анотація:
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al2O3 using trimethylaluminum [TMA, Al(CH3)3] and Ar–O2 plasma within the temperature range of 80–200 °C. Thin-film analysis revealed low impurity contents and a decreasing growth-per-cycle (GPC) with increasing temperature. The underlying chemistry of the process was studied with a combination of gas-phase infrared spectroscopy on the exhaust plasma gas and optical emission spectroscopy (OES) on the plasma zone. Among the chemical species formed in the plasma half-cycle, CO2, H2O, CH4, and CH2O were identified. The formation of these products confirms that the removal of CH3 ligands during the plasma half-cycle occurs through two reaction pathways that have a different temperature dependences: (i) combustion reactions initiated by O2 plasma species and leading to CO2 and H2O formation and (ii) thermal ALD-like reactions initiated by the H2O molecules formed in pathway (i) and resulting in CH4 production. With increasing temperature, the dehydroxylation of OH groups cause less TMA adsorption which leads to less CO2 and H2O from the combustion reactions in the plasma step. At the same time, the higher reactivity of H2O at higher temperatures initiates more thermal ALD-like reactions, thus producing relatively more CH4. The CH4 can also undergo further gas-phase reactions leading to the formation of CH2O as was theoretically predicted. Another observation is that O3, which is naturally produced in the atmospheric-pressure O2 plasma, decomposes at higher temperatures mainly due to an increase of gas-phase collisions. In addition to the new insights into the growth mechanism of atmospheric-pressure PE-s-ALD of Al2O3, this work presents a method to study both the surface chemistry during spatial ALD to further extend our fundamental understanding of the method.
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5

Do Nascimento, Cleonilde Maria, Alex José de Melo Silva, Jéssica Paula Lucena, Juliana Ellen de Melo Gama, Cícero Jádson Da Costa, Elane Beatriz de Jesus Oliveira, Danielle Maria Nascimento Moura, Helotonio Carvalho, and Sheilla Andrade De Oliveira. "Epidemiological profile of the main prevalent liver diseases in Brazil Northeast and possible impacts associated with the COVID-19 pandemic." Cuadernos de Educación y Desarrollo 15, no. 12 (December 21, 2023): 16916–41. http://dx.doi.org/10.55905/cuadv15n12-096.

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Анотація:
Liver diseases especially hepatitis, alcoholic liver disease (ALD), and cancer are among the main causes of morbidity-mortality worldwide. Here, we analyzed data on hospital admissions, prevalence and mortality rates due to ALD, liver cancer, viral hepatitis and schistosomiasis in northeastern Brazil between 2000-2020, and investigate possible impacts caused by the COVID-19 pandemic in these data. In this period, Pernambuco (PE) and Bahia (BA) stood out for the growth in admissions for ALD: 707.2% and 177.3%, respectively; Paraiba (PB), Ceará (CE), and Alagoas (AL) showed the highest prevalence: 9.8%, 7.9%, 6.8%, respectively; and Maranhão (MA) showed the lowest: 2.1%. The highest mortality rates were RN (22.8%), SE (22.1%), and the lowest, PI (9.5%). For Neoplasms, we highlight PE, BA, and CE with increases of 659.4%, 934.6%, and 1,069.6% in admissions, respectively. Regarding mortality, the highest averages were observed for BA (31.1%), and CE (17.9%). However, in this period, admissions due to hepatitis were reduced about 70% in the country. The highest prevalence means in the period were MA (7.37%) and PE (6.38%). PE had the highest mean mortality (9.1%), followed by BA (7.1%). Hospitalizations for schistosomiasis decreased between 2000-2020, with emphasis to AL (98.4%), BA (92.3%), and PE (93.4%). The same was observed for prevalence and mortality. Analyzing admissions data from 2020 compared to the average from 2015 to 2019, a significant decrease in hospitalizations due to hepatitis, ALD, and schistosomiasis was observed. However, admissions for liver cancer increased. These data show the importance of epidemiological screening of liver diseases in Brazilian regions and highlight the need for a thorough mapping of the real impact of the COVID-19 pandemic on health data recording systems in the country.
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6

Roy, Amit K., Jolien Dendooven, Davy Deduytsche, Kilian Devloo-Casier, Kim Ragaert, Ludwig Cardon, and Christophe Detavernier. "Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene." Chemical Communications 51, no. 17 (2015): 3556–58. http://dx.doi.org/10.1039/c4cc09474c.

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7

Gebhard, M., F. Mitschker, M. Wiesing, I. Giner, B. Torun, T. de los Arcos, P. Awakowicz, G. Grundmeier, and A. Devi. "An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor." Journal of Materials Chemistry C 4, no. 5 (2016): 1057–65. http://dx.doi.org/10.1039/c5tc03385c.

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8

Karbalaei Akbari, Mohammad, Nasrin Siraj Lopa, and Serge Zhuiykov. "Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions." Coatings 13, no. 6 (June 3, 2023): 1041. http://dx.doi.org/10.3390/coatings13061041.

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Анотація:
Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O3 is an ultra-wide bandgap metal oxide semiconductor for application in electronic devices. The polymorphous Ga2O3 with its unique electronic characteristics and doping capabilities is a functional option for heterointerface engineering at metal-semiconductor 2D heterojunctions for application in nanofabrication technology. Plasma-enhanced atomic layer deposition (PE-ALD) enabled the deposition of ultra-thin nanostructures at low-growth temperatures. The present study used the PE-ALD process for the deposition of atomically thin crystalline ß-Ga2O3 films for heterointerface engineering at 2D metal-semiconductor heterojunctions. Via the control of plasma gas composition and ALD temperature, the wafer-scaled deposition of ~5.0 nm thick crystalline ß-Ga2O3 at Au/Ga2O3-TiO2 heterointerfaces was achieved. Material characterization techniques showed the effects of plasma composition and ALD temperature on the properties and structure of Ga2O3 films. The following study on the electronic characteristics of Au/Ga2O3-TiO2 2D heterojunctions confirmed the tunability of this metal/semiconductor polarized junction, which works as functional electron channel layer developed based on tunable p-n junctions at 2D metal/semiconductor interfaces.
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9

Dobbelaere, Thomas, Felix Mattelaer, Amit Kumar Roy, Philippe Vereecken, and Christophe Detavernier. "Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries." Journal of Materials Chemistry A 5, no. 1 (2017): 330–38. http://dx.doi.org/10.1039/c6ta04179e.

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10

Park, Yongju, Woonyoung Lee, Yongkook Choi, Hyunkyu Lee, and Jinseong Park. "Characteristics of Tin Oxide Thin Films Deposited by PE-ALD." Korean Journal of Materials Research 14, no. 12 (December 1, 2004): 840–45. http://dx.doi.org/10.3740/mrsk.2004.14.12.840.

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Дисертації з теми "Pe(ald)"

1

Jaffal, Moustapha. "Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.

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Анотація:
Au cours des dernières décennies, l’industrie des semi-conducteurs a connu une augmentation spectaculaire de la performance des circuits intégrés. La photolithographie, un procédé indispensable à la fabrication des circuits intégrés, requiert désormais une séquence d'étapes de plus en plus complexes, comprenant de nombreux traitements successifs tels que le Self-Aligned Double Patterning (SADP) et le Self-Aligned Quadruple Patterning (SAQP). Au-delà de leur complexité et de l’augmentation des coûts associés, les étapes de patterning engendrent des erreurs d’alignement (Edge Placement Error (EPE)) qui affectent le bon fonctionnement des dispositifs. L’objectif de la thèse est de développer un nouveau procédé de dépôt sélectif topographique (TSD) par une approche en super-cycle « Dépôt/Gravure ». Les avantages d’un dépôt TSD est de réaliser latéralement et directement des espaceurs sur les flancs latéraux des architectures 3D telles que les grilles des transistors CMOS à l’échelle du nanomètre. Cette nouvelle stratégie de fabrication permet tout d’abord d’envisager une réduction du nombre des étapes et d’équipements nécessaires à la structuration, limitant ainsi les EPE potentiellement induites par la photolithographie. Ainsi, elle offre la possibilité de réduire la consommation des surfaces horizontales des transistors 3D, qui est un des éléments critiques à prendre en compte lors de réalisation des espaceurs dans l’intégration des nœuds technologiques avancés. Une preuve de concept du dépôt TSD a fait l’objet de ma thèse grâce à une approche en super-cycle reposée sur l’alternance d’un procédé de dépôt conforme par PE(ALD) suivi par différents procédés de gravure plasma anisotrope dans un seul et même équipement, en utilisant les propriétés physiques et chimiques d’interactions des plasmas avec les matériaux
Over the past decades, the semiconductor industry has witnessed a remarkable increase in the performance of integrated circuits. Photolithography, a crucial process in the manufacturing of integrated circuits, requires an increasingly complex sequence of steps, including various successive treatments such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). Beyond their complexity and the associated cost escalation, patterning steps can result in alignment errors, known as Edge Placement Error (EPE), which can impact the proper functioning of devices such as transistors. The objective of this thesis is to develop a novel topographical selective deposition (TSD) process using a "Deposition/Etching" super-cycle approach. The advantages of this TSD process include the lateral and direct formation of spacers on the sidewalls of 3D architectures, such as CMOS transistor gates at the nanoscale. This innovative manufacturing approach paves the way for reducing the number of steps and equipment required in the fabrication process, minimizing the potential EPE introduced by photolithography. Consequently, it offers the opportunity to reduce the consumption of horizontal surfaces in 3D transistors, a critical factor in the integration of advanced technological nodes during spacer creation. This work offers a proof of concept of the TSD deposition, using a super-cycle approach that alternates between a conformal deposition process by PE(ALD) and various anisotropic plasma etching processes in the same tool. This approach leverages the physical and chemical properties of plasma interactions with materials
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2

ZHANG, XIAO-YING, and 張小英. "Characteristic Analysis of HfO2 Thin Films Deposited by PE-ALD and its Application in Solar Cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x9kgj2.

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Анотація:
博士
大葉大學
電機工程學系
105
HfO2 thin films were grown by plasma enhanced atomic layer deposited (PE-ALD) and their deposition condition is optimized. Changing different pretreatment silicon substrates and annealing temperatures improved the passivation properties of HfO2 thin films on silicon. HfO2 thin films used in high-efficiency n-type Si solar cells were also investigated. The main works are summarized as follows: 1. The condition of HfO2 thin films deposited by PE-ALD was optimized. When the silicon substrate was pretreated by O2 plasma, the HfO2 thin films have the best passivation effect on silicon comparing to N2 plasma pretreatment and non-pretreatment. A mechanism of O2 plasma pretreatment silicon substrates improving passivation properties of HfO2 thin films on silicon was also present. 2. Post annealing in N2 ambient of HfO2 thin films were carried out to investigate their passivation effect on the silicon. The results showed that rapid thermal annealing at 500 ℃ for 10 min yielded a highest lifetime of 67 μs. The surface recombination velocity (SRV) is 187 cm/s. A mechanism of post annealing improving passivation properties of HfO2 thin films on silicon was also investigated. 3. The effect of different SRV on n-type silicon solar cells was simulated by PC1D. Simulation results showed that the efficiency could reach 20.5% while the front SRV is 22 cm/s and the rear SRV is 187 cm/s.
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Тези доповідей конференцій з теми "Pe(ald)"

1

Dallaev, Rashid. "Characterization Of Aln Nanolayers Deposited On A Surface Of Hopg By Pe-Ald." In STUDENT EEICT 2021. Brno: Fakulta elektrotechniky a komunikacnich technologii VUT v Brne, 2021. http://dx.doi.org/10.13164/eeict.2021.193.

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2

Yan, Jingdong, Bosen Ma, Stephen Liou, Ce Qin, and Amit Jain. "Tunable Step Coverage of In-Situ Pe-Ald in ETCH Chamber for Sidewall Protection During 3D Nand High Aspect-Ratio Etch." In 2021 China Semiconductor Technology International Conference (CSTIC). IEEE, 2021. http://dx.doi.org/10.1109/cstic52283.2021.9461512.

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3

Zakirov, Evgeny R., Valeriy G. Kesler, and Georgiy Yu Sidorov. "Studying C–V Characteristics of MIS Structures with PE-ALD Al2O3 on HgCdTe Oxidized in Remote RF-Plasma." In 2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE). IEEE, 2023. http://dx.doi.org/10.1109/apeie59731.2023.10347577.

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4

Wu, Tian-Li, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, and Robin Roelofs. "Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs." In 2015 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2015. http://dx.doi.org/10.1109/irps.2015.7112769.

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Звіти організацій з теми "Pe(ald)"

1

Alhasan, Ahmad, Brian Moon, Doug Steele, Hyung Lee, and Abu Sufian. Chip Seal Quality Assurance Using Percent Embedment. Illinois Center for Transportation, December 2023. http://dx.doi.org/10.36501/0197-9191/23-029.

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This study investigates the use of macrotexture as an indicator of the percent embedment (PE) of aggregate in a chip seal and ultimately, as a quality assurance tool for chip seals. The study included an extensive field- and controlled-testing program from 24 chip seal sections constructed in Illinois. Surface texture measurements were acquired using a high-speed texture profiler and a stationary laser texture device. The analysis showed that stationary texture measurements were more consistent and reliable for estimating PE and characterizing chip seals in the field. Moreover, the ground truth PE values were estimated using an image analysis algorithm implemented on side-view images of cores extracted in the field. The ground truth PE values were estimated using four approaches: the average elevation method, percent embedment of each aggregate method, the peak method, and the aggregate circumference method. The analysis showed that the correlations between the different PE estimation methods are relatively weak, indicating the various methods provide different information and may relate to different characteristics. The general regression models for PE values estimated using the average elevation method and the mean profile depth (MPD) acquired using laser texture scans and the average least dimension (ALD) yielded the highest R2 value of 0.50. The model showed a consistent decreasing trend between PE and MPD estimated using laser texture scans and side-view images. Moreover, the model matched the expected behavior that PE should reach 100% as MPD reaches 0. Finally, four models were recommended correlating PE estimated using the average elevation and each aggregate methods to the MPD (mm) estimated from laser texture scans and ALD (mm) estimated from side-view images.
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