Дисертації з теми "PCM memory"
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1
Grönberg, Axel. "Emerging Non-Volatile Memory and Initial Experiences with PCM Main Memory." Thesis, Uppsala universitet, Institutionen för informationsteknologi, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-407070.
Анотація:
A group of new non-volatile memory technologies with characteristics making them worthy of consideration for different parts of the memory hierarchy, including the main memory, are emerging. In this thesis I discuss the state of STT-RAM, ReRAM and PCM technologies which are three of the front runners in this group of new technologies. I also simulate the performance of PCM used as main memory using Intel’s binary instrumentation framework Pin and compare it to DRAM to explore three research questions. Firstly, in the case of horizontally integrated PCM and DRAM I test a data mapping policy where an application’s stack is mapped to DRAM and the heap is mapped to PCM. I find that in the case of my simulation this mapping have no benefits since most of the stack is continually kept in the cache which causes the DRAM to end up unutilized. Secondly, I compare the read latency between PCM and DRAM and find an average increase 48 %for PCM. Thirdly, I compare the energy costs of two write policiesfor PCM. The first being write-through of dirty bytes at byte granularity and the second being full row buffer write-back. I find that the first method has on average less than a third of the energy cost compared to the second method.T
2
Seong, Nak Hee. "A reliable, secure phase-change memory as a main memory." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50123.
Анотація:
The main objective of this research is to provide an efficient and reliable method for using multi-level cell (MLC) phase-change memory (PCM) as a main memory. As DRAM scaling approaches the physical limit, alternative memory technologies are being explored for future computing systems. Among them, PCM is the most mature with announced commercial products for NOR flash replacement. Its fast access latency and scalability have led researchers to investigate PCM as a feasible candidate for DRAM replacement. Moreover, the multi-level potential of PCM cells can enhance the scalability by increasing the number of bits stored in a cell. However, the two major challenges for adopting MLC PCM are the limited write endurance cycle and the resistance drift issue. To alleviate the negative impact of the limited write endurance cycle, this thesis first introduces a secure wear-leveling scheme called Security Refresh. In the study, this thesis argues that a PCM design not only has to consider normal wear-out under normal application behavior, most importantly, it must take the worst-case scenario into account with the presence of malicious exploits and a compromised OS to address the durability and security issues simultaneously. Security Refresh can avoid information leak by constantly migrating their physical locations inside the PCM, obfuscating the actual data placement from users and system software. In addition to the secure wear-leveling scheme, this thesis also proposes SAFER, a hardware-efficient multi-bit stuck-at-fault error recovery scheme which can function in conjunction with existing wear-leveling techniques. The limited write endurance leads to wear-out related permanent failures, and furthermore, technology scaling increases the variation in cell lifetime resulting in early failures of many cells. SAFER exploits the key attribute that a failed cell with a stuck-at value is still readable, making it possible to continue to use the failed cell to store data; thereby reducing the hardware overhead for error recovery. Another approach that this thesis proposes to address the lower write endurance is a hybrid phase-change memory architecture that can dynamically classify, detect, and isolate frequent writes from accessing the phase-change memory. This proposed architecture employs a small SRAM-based Isolation Cache with a detection mechanism based on a multi-dimensional Bloom filter and a binary classifier. The techniques are orthogonal to and can be combined with other wear-out management schemes to obtain a synergistic result. Lastly, this thesis quantitatively studies the current art for MLC PCM in dealing with the resistance drift problem and shows that the previous techniques such as scrubbing or error correction schemes are incapable of providing sufficient level of reliability. Then, this thesis proposes tri-level-cell (3LC) PCM and demonstrates that 3LC PCM can be a viable solution to achieve the soft error rate of DRAM and the performance of single-level-cell PCM.
3
SELMO, SIMONE. "Functional analysis of In-based nanowires for low power phase change memory applications." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2017. http://hdl.handle.net/10281/153247.
Анотація:
Phase change memories (PCMs), based on chalcogenide alloys (mainly Ge2Sb2Te5), are the most promising candidate for the realization of “Storage Class Memories”, which would fill the gap between ‘‘operation’’ and ‘‘storage’’ memories. PCMs are also one of the few currently available technologies for the implementation of nanoeletronic synapses in high density neuromorphic systems. The main improvements needed in order to exploit the full potential of PCMs in these innovative applications are the reduction of the programming currents and power consumption, and further cell downscaling. Thanks to their nano-sized active volume to be programmed and self-heating behavior, phase change nanowires (NWs) are expected to exhibit improved memory performances with respected to commonly used thin-film/heater-based structures.
The Ph. D. Thesis of the candidate reports the study of the phase change properties of ultra-thin In-based NWs for low power consuming PCMs, exploring the more promising features of this class of materials with respect to the commonly considered Ge-Sb-Te alloys.
In particular, the self-assembly of In-Sb-Te, In-doped Sb and In-Ge-Te NWs was successfully achieved by Metal Organic Chemical Vapour Deposition (MOCVD), coupled to vapour-liquid-solid mechanism, catalysed by catalyst nanoparticles. The parameters influencing the NW self-assembly were studied and the compositional, morphological and structural analysis of the grown structures was performed. In all cases, NWs of several μm in length and with diameters as small as 15 nm were obtained. The experimental contribution of the Ph. D. candidate to the NWs growth study was mainly related to the substrates preparation, catalyst deposition and, morphological and elemental analysis of the grown samples. Moreover, the Ph. D. candidate has performed the functional analysis of In3Sb1Te2 and In-doped Sb NW-based PCM devices. To conduct that analysis, a suitable fabrication procedure of the devices and an appropriate electrical measuring set-up have been identified. Reversible and well reproducible phase change memory switching was demonstrated for In3Sb1Te2 and In-doped Sb NW devices, showing low working parameters, such as “RESET” voltage, current and power.
The obtained results support the conclusion that In-based ultra-thin NWs are potential building blocks for the realization of ultra-scaled, high performance PCM devices.Phase change memories (PCMs), based on chalcogenide alloys (mainly Ge2Sb2Te5), are the most promising candidate for the realization of “Storage Class Memories”, which would fill the gap between ‘‘operation’’ and ‘‘storage’’ memories. PCMs are also one of the few currently available technologies for the implementation of nanoeletronic synapses in high density neuromorphic systems. The main improvements needed in order to exploit the full potential of PCMs in these innovative applications are the reduction of the programming currents and power consumption, and further cell downscaling. Thanks to their nano-sized active volume to be programmed and self-heating behavior, phase change nanowires (NWs) are expected to exhibit improved memory performances with respected to commonly used thin-film/heater-based structures. The Ph. D. Thesis of the candidate reports the study of the phase change properties of ultra-thin In-based NWs for low power consuming PCMs, exploring the more promising features of this class of materials with respect to the commonly considered Ge-Sb-Te alloys. In particular, the self-assembly of In-Sb-Te, In-doped Sb and In-Ge-Te NWs was successfully achieved by Metal Organic Chemical Vapour Deposition (MOCVD), coupled to vapour-liquid-solid mechanism, catalysed by catalyst nanoparticles. The parameters influencing the NW self-assembly were studied and the compositional, morphological and structural analysis of the grown structures was performed. In all cases, NWs of several μm in length and with diameters as small as 15 nm were obtained. The experimental contribution of the Ph. D. candidate to the NWs growth study was mainly related to the substrates preparation, catalyst deposition and, morphological and elemental analysis of the grown samples. Moreover, the Ph. D. candidate has performed the functional analysis of In3Sb1Te2 and In-doped Sb NW-based PCM devices. To conduct that analysis, a suitable fabrication procedure of the devices and an appropriate electrical measuring set-up have been identified. Reversible and well reproducible phase change memory switching was demonstrated for In3Sb1Te2 and In-doped Sb NW devices, showing low working parameters, such as “RESET” voltage, current and power. The obtained results support the conclusion that In-based ultra-thin NWs are potential building blocks for the realization of ultra-scaled, high performance PCM devices.
4
Garbin, Daniele. "Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT133/document.
Анотація:
Le cerveau humain est composé d’un grand nombre de réseaux neuraux interconnectés, dont les neurones et les synapses en sont les briques constitutives. Caractérisé par une faible consommation de puissance, de quelques Watts seulement, le cerveau humain est capable d’accomplir des tâches qui sont inaccessibles aux systèmes de calcul actuels, basés sur une architecture de type Von Neumann. La conception de systèmes neuromorphiques vise à réaliser une nouvelle génération de systèmes de calcul qui ne soit pas de type Von Neumann. L’utilisation de mémoire non-volatile innovantes en tant que synapses artificielles, pour application aux systèmes neuromorphiques, est donc étudiée dans cette thèse. Deux types de technologies de mémoires sont examinés : les mémoires à changement de phase (Phase-Change Memory, PCM) et les mémoires résistives à base d’oxyde (Oxide-based resistive Random Access Memory, OxRAM). L’utilisation des dispositifs PCM en tant que synapses de type binaire et probabiliste est étudiée pour l’extraction de motifs visuels complexes, en évaluant l’impact des conditions de programmation sur la consommation de puissance au niveau du système. Une nouvelle stratégie de programmation, qui permet de réduire l’impact du problème de la dérive de la résistance des dispositifs PCM est ensuite proposée. Il est démontré qu’en utilisant des dispositifs de tailles réduites, il est possible de diminuer la consommation énergétique du système. La variabilité des dispositifs OxRAM est ensuite évaluée expérimentalement par caractérisation électrique, en utilisant des méthodes statistiques, à la fois sur des dispositifs isolés et dans une matrice complète de mémoire. Un modèle qui permets de reproduire la variabilité depuis le niveau faiblement résistif jusqu’au niveau hautement résistif est ainsi développé. Une architecture de réseau de neurones de type convolutionnel est ensuite proposée sur la base de ces travaux éxperimentaux. La tolérance du circuit neuromorphique à la variabilité des OxRAM est enfin démontrée grâce à des tâches de reconnaissance de motifs visuels complexes, comme par exemple des caractères manuscrits ou des panneaux de signalisations routièresThe human brain is made of a large number of interconnected neural networks which are composed of neurons and synapses. With a low power consumption of only few Watts, the human brain is able to perform computational tasks that are out of reach for today’s computers, which are based on the Von Neumann architecture. Neuromorphic hardware design, taking inspiration from the human brain, aims to implement the next generation, non-Von Neumann computing systems. In this thesis, emerging non-volatile memory devices, specifically Phase-Change Memory (PCM) and Oxide-based resistive memory (OxRAM) devices, are studied as artificial synapses in neuromorphic systems. The use of PCM devices as binary probabilistic synapses is studied for complex visual pattern extraction applications, evaluating the impact of the PCM programming conditions on the system-level power consumption.A programming strategy is proposed to mitigate the impact of PCM resistance drift. It is shown that, using scaled devices, it is possible to reduce the synaptic power consumption. The OxRAM resistance variability is evaluated experimentally through electrical characterization, gathering statistics on both single memory cells and at array level. A model that allows to reproduce OxRAM variability from low to high resistance state is developed. An OxRAM-based convolutional neural network architecture is then proposed on the basis of this experimental work. By implementing the computation of convolution directly in memory, the Von Neumann bottleneck is avoided. Robustness to OxRAM variability is demonstrated with complex visual pattern recognition tasks such as handwritten characters and traffic signs recognition
5
Balasubramanian, Sanchayeni. "Improving Hard Disk Drive Write IO Performance with Phase Change Memory as a Buffer Cache." University of Cincinnati / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1511881125562903.
6
Baek, Seungcheol. "High-performance memory system architectures using data compression." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51863.
Анотація:
The Chip Multi-Processor (CMP) paradigm has cemented itself as the archetypal philosophy of future microprocessor design. Rapidly diminishing technology feature sizes have enabled the integration of ever-increasing numbers of processing cores on a single chip die. This abundance of processing power has magnified the venerable processor-memory performance gap, which is known as the ”memory wall”. To bridge this performance gap, a high-performing memory structure is needed. An attractive solution to overcoming this processor-memory performance gap is using compression in the memory hierarchy. In this thesis, to use compression techniques more efficiently, compressed cacheline size information is studied, and size-aware cache management techniques and hot-cacheline prediction for dynamic early decompression technique are proposed. Also, the proposed works in this thesis attempt to mitigate the limitations of phase change memory (PCM) such as low write performance and limited long-term endurance. One promising solution is the deployment of hybridized memory architectures that fuse dynamic random access memory (DRAM) and PCM, to combine the best attributes of each technology by using the DRAM as an off-chip cache. A dual-phase compression technique is proposed for high-performing DRAM/PCM hybrid environments and a multi-faceted wear-leveling technique is proposed for the long-term endurance of compressed PCM. This thesis also includes a new compression-based hybrid multi-level cell (MLC)/single-level cell (SLC) PCM management technique that aims to combine the performance edge of SLCs with the higher capacity of MLCs in a hybrid environment.
7
Trabelsi, Ahmed. "Modulation des niveaux de résistance dans une mémoire PCM pour des applications neuromorphiques." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT027.
Анотація:
La croissance exponentielle des données au cours des dernières années a entraîné une augmentation significative de la consommation d'énergie, créant ainsi un besoin urgent de technologies de mémoire innovantes pour surmonter les limitations des solutions conventionnelles. Cette inondation de données a entraîné une augmentation prévue de la consommation dans les centres de données, avec une multiplication par quatre des données d'ici 2025 par rapport au volume actuel. Pour relever ce défi, des technologies de mémoire émergentes telles que la RRAM (RAM résistive), la PCM (mémoire à changement de phase) et la MRAM (RAM magnéto-résistive) sont en cours de développement pour offrir une haute densité, des temps d'accès rapides et une non-volatilité, révolutionnant ainsi les solutions de stockage et de mémoire (Molas & Nowak, 2021).Une technique prometteuse pour répondre au besoin de technologies de mémoire innovantes est l'utilisation de la modulation de fréquence pour moduler la résistance dans la PCM, qui est un aspect crucial de son utilisation en informatique neuromorphique. La PCM est une technologie de mémoire non volatile basée sur la transition de phase réversible entre les phases amorphe et cristalline de certains matériaux. La capacité de modifier les niveaux de conductance rend la PCM bien adaptée aux réalisations synaptiques en informatique neuromorphique. La cristallisation progressive du matériau à changement de phase et l'augmentation subséquente de la conductance du dispositif permettent à la PCM d'être utilisée dans des applications neuromorphiques. De plus, des réseaux neuronaux basés sur la mémoire PCM ont été développés, et l'effet de dérive de la résistance dans la PCM a été quantifié, ouvrant de nouvelles voies pour le développement d'accélérateurs neuromorphiques à base de memristors PCM. De plus, la modulation de fréquence a été identifiée comme une technique prometteuse pour moduler la résistance dans la PCM. Cette approche peut être appliquée à la PCM ainsi qu'à la RRAM, et on s'attend à ce qu'elle produise des effets d'apprentissage améliorés dans des réseaux plus complexes utilisant des cellules multi-niveaux (Wang et al., 2011). L'objectif principal de cette thèse est d'explorer des méthodes innovantes pour contrôler les niveaux de résistance dans les dispositifs PCM en mettant l'accent sur leur application dans les systèmes neuromorphiques. La recherche implique une compréhension approfondie des mécanismes sous-jacents aux dispositifs PCM et une identification des paramètres susceptibles d'influencer la fiabilité de ces dispositifs. De plus, la thèse vise à proposer une nouvelle approche pour moduler efficacement les niveaux de résistance dans les dispositifs PCM, contribuant ainsi aux avancées dans ce domaineThe exponential growth of data in recent years has led to a significant increase in energy consumption, creating a pressing need for innovative memory technologies to overcome the limitations of conventional solutions. This data deluge has resulted in a forecasted consumption surge in data centers, with an expected fourfold increase in data by 2025 compared to the present volume. To address this challenge, emerging memory technologies such as RRAM (Resistive RAM), PCM (Phase-Change Memory), and MRAM (Magnetoresistive RAM) are being developed to offer high density, fast access times, and non-volatility, thereby revolutionizing storage and memory solutions (Molas & Nowak, 2021).One promising technique to address the need for innovative memory technologies is the use of frequency modulation to modulate resistance in PCM which is a crucial aspect of its use in neuromorphic computing. PCM is a non-volatile memory technology based on the reversible phase transition between amorphous and crystalline phases of certain materials. The ability to alter conductance levels makes PCM well-suited for synaptic realizations in neuromorphic computing. The progressive crystallization of the phase-change material and the subsequent increase in device conductance enable PCM to be used in neuromorphic applications. Additionally, PCM-based memristor neural networks have been developed, and the resistance drift effect in PCM has been quantified, opening up new paths for the development of PCM-based memristor neuromorphic accelerators. Furthermore, frequency modulation has been identified as a promising technique to modulate resistance in PCM. This approach can be applied to PCM as well as RRAM, and it is expected to yield improved learning effects in more complex networks using multi-level cells (Wang et al., 2011). The primary aim of this thesis is to explore innovative methods for controlling resistance levels in PCM devices with a focus on their application in neuromorphic systems. The research involves a comprehensive understanding of the mechanisms underlying PCM devices and an identification of parameters that may influence the reliability of these devices. Additionally, the thesis aims to propose a novel approach to effectively modulate resistance levels in PCM devices, contributing to advancements in this field
8
Jensen, Peter, and Christopher Thacker. "A NEW GENERATION OF RECORDING TECHNOLOGY THE SOLID STATE RECORDER." International Foundation for Telemetering, 1998. http://hdl.handle.net/10150/607372.
Анотація:
International Telemetering Conference Proceedings / October 26-29, 1998 / Town & Country Resort Hotel and Convention Center, San Diego, CaliforniaThe Test & Evaluation community is starting to migrate toward solid state recording. This paper outlines some of the important areas that are new to solid state recording as well as examining some of the issues involved in moving to a direct recording methodology. Some of the parameters used to choose a solid state memory architecture are included. A matrix to compare various methods of data recording, such as solid state and magnetic tape recording, will be discussed. These various methods will be evaluated using the following parameters: Ruggedness (Shock, Vibration, Temperature), Capacity, and Reliability (Error Correction). A short discussion of data formats with an emphasis on efficiency and usability is included.
9
Kiouseloglou, Athanasios. "Caractérisation et conception d' architectures basées sur des mémoires à changement de phase." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT128/document.
Анотація:
Les mémoires à base de semi-conducteur sont indispensables pour les dispositifs électroniques actuels. La demande croissante pour des dispositifs mémoires fortement miniaturisées a entraîné le développement de mémoires non volatiles fiables qui sont utilisées dans des systèmes informatiques pour le stockage de données et qui sont capables d'atteindre des débits de données élevés, avec des niveaux de dissipation d'énergie équivalents voire moindres que ceux des technologies mémoires actuelles.Parmi les technologies de mémoires non-volatiles émergentes, les mémoires à changement de phase (PCM) sont le candidat le plus prometteur pour remplacer la technologie de mémoire Flash conventionnelle. Les PCM offrent une grande variété de fonctions, comme une lecture et une écriture rapide, un excellent potentiel de miniaturisation, une compatibilité CMOS et des performances élevées de rétention de données à haute température et d'endurance, et peuvent donc ouvrir la voie à des applications non seulement pour les dispositifs mémoires, mais également pour les systèmes informatiques à hautes performances. Cependant, certains problèmes de fiabilité doivent encore être résolus pour que les PCM se positionnent comme un remplacement concurrentiel de la mémoire Flash.Ce travail se concentre sur l'étude de mémoires à changement de phase intégrées afin d'optimiser leurs performances et de proposer des solutions pour surmonter les principaux points critiques de la technologie, ciblant des applications à hautes températures. Afin d'améliorer la fiabilité de la technologie, la stœchiométrie du matériau à changement de phase a été conçue de façon appropriée et des dopants ont été ajoutés, optimisant ainsi la stabilité thermique. Une diminution de la vitesse de programmation est également rapportée, ainsi qu'un drift résiduel de la résistance de l'état de faiblement résistif vers des valeurs de résistance plus élevées au cours du temps.Une nouvelle technique de programmation est introduite, permettant d'améliorer la vitesse de programmation des dispositifs et, dans le même temps, de réduire avec succès le phénomène de drift en résistance. Par ailleurs, un algorithme de programmation des PCM multi-bits est présenté. Un générateur d'impulsions fournissant des impulsions avec la tension souhaitée en sortie a été conçu et testé expérimentalement, répondant aux demandes de programmation d'une grande variété de matériaux innovants et en permettant la programmation précise et l’optimisation des performances des PCMSemiconductor memory has always been an indispensable component of modern electronic systems. The increasing demand for highly scaled memory devices has led to the development of reliable non-volatile memories that are used in computing systems for permanent data storage and are capable of achieving high data rates, with the same or lower power dissipation levels as those of current advanced memory solutions.Among the emerging non-volatile memory technologies, Phase Change Memory (PCM) is the most promising candidate to replace conventional Flash memory technology. PCM offers a wide variety of features, such as fast read and write access, excellent scalability potential, baseline CMOS compatibility and exceptional high-temperature data retention and endurance performances, and can therefore pave the way for applications not only in memory devices, but also in energy demanding, high-performance computer systems. However, some reliability issues still need to be addressed in order for PCM to establish itself as a competitive Flash memory replacement.This work focuses on the study of embedded Phase Change Memory in order to optimize device performance and propose solutions to overcome the key bottlenecks of the technology, targeting high-temperature applications. In order to enhance the reliability of the technology, the stoichiometry of the phase change material was appropriately engineered and dopants were added, resulting in an optimized thermal stability of the device. A decrease in the programming speed of the memory technology was also reported, along with a residual resistivity drift of the low resistance state towards higher resistance values over time.A novel programming technique was introduced, thanks to which the programming speed of the devices was improved and, at the same time, the resistance drift phenomenon could be successfully addressed. Moreover, an algorithm for programming PCM devices to multiple bits per cell using a single-pulse procedure was also presented. A pulse generator dedicated to provide the desired voltage pulses at its output was designed and experimentally tested, fitting the programming demands of a wide variety of materials under study and enabling accurate programming targeting the performance optimization of the technology
10
Navarro, Gabriele. "Analyse de la fiabilité de mémoires à changement de phase embarquées basées sur des matériaux innovants." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01061792.
Анотація:
Les Mémoires ont de plus en plus importance à l'époque actuelle, et sont fondamentales pour la définition de tous les systèmes électroniques avec lesquels nous entrons en contact dans notre vie quotidienne. Les mémoires non-volatiles (NVM), représentées par la technologie Flash, ont pu suivre jusqu'à présent l'effort à la miniaturisation pour satisfaire la demande croissante de densité de mémoire exigée par le marché. Cependant, la réduction de la taille du dispositif de mémoire est de plus en plus difficile et la complexité technologique demandé a augmenté le coût par octet. Dans ce contexte, les technologies de mémoire innovantes deviennent non seulement une alternative, mais la seule solution possible pour fournir une densité plus élevée à moindre coût, une meilleure fonctionnalité et une faible consommation d'énergie. Les Mémoires à Changement de Phase (PCM) sont considérées comme la solution de pointe pour la future génération de mémoires non-volatiles, grâce à leur non-volatilité , scalabilité, "bit-alterability", grande vitesse de lecture et d'écriture, et cyclabilité élevée. Néanmoins, certains problèmes de fiabilité restent à surmonter afin de rendre cette technologie un remplacement valable de la technologie Flash dans toutes les applications. Plus en détail, la conservation des données à haute température, est l'une des principales exigences des applications embarquées industrielles et automobiles. Cette thèse se concentre sur l'étude des mémoires à changement de phase pour des applications embarquées, dans le but d'optimiser le dispositif de mémoire et enfin de proposer des solutions pour surmonter les principaux obstacles de cette technologie, en abordant notamment les applications automobiles. Nous avons conçu, fabriqué et testé des dispositifs PCM basés sur des structures reconnues et innovantes, en analysant leurs avantages et inconvénients, et en évaluant l'impact de la réduction de la taille. Notre analyse de fiabilité a conduit au développement d'un système de caractérisation dédié à caractériser nos cellules PCM avec des impulsions de l'ordre de la nanoseconde, et à la mise en oeuvre d'un outil de simulation basé sur un solveur thermoélectrique et sur l'approche numérique "Level Set", pour comprendre les différentes mécanismes qui ont lieu dans nos cellules pendant les opérations de programmation. Afin de répondre aux spécifications du marché des mémoires non-volatiles embarquées, nous avons conçu le matériau à changement de phase intégré dans le dispositif PCM avec deux principales approches: la variation de la stoechiométrie et l'ajout de dopants. Nous avons démontré et expliqué comment la rétention des données dans les dispositifs PCM à base de GeTe peut être améliorée avec l'augmentation de la concentration de Te, et comment les inclusions de SiO2 peuvent réduire les défauts causés par la tension de lecture à températures de fonctionnement élevées. En outre, nous avons présenté les avantages sur la réduction de la puissance de programmation du dopage de carbone dans les dispositifs à base de GST. Enfin, nous avons étudié les effets de l'enrichissement en Ge dans le GST, combiné avec le dopage N et C, intégré dans des cellules PCM à l'état de l'art. Grâce à l'introduction d'une nouvelle technique de programmation, nous avons démontré la possibilité d'augmenter la vitesse de programmation de ces dispositifs, caractérisés par des performances de rétention des données parmi les meilleurs rapportés dans la littérature, et de réduire le phénomène de la dérive de la résistance qui affecte la stabilité de l'état programmé des cellules PCM. Nous avons donc prouvé, avec ces derniers résultats, la validité de la technologie PCM pour les applications embarquées.
11
Pigot, Corentin. "Caractérisation électrique et modélisation compacte de mémoires à changement de phase." Electronic Thesis or Diss., Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0185.
Анотація:
La mémoire à changement de phase (ou PCM) est considérée actuellement comme la plus mature des technologies émergentes susceptibles de pallier les limitations de la mémoire Flash-NOR pour le futur des applications embarquées. Afin de permettre la conception de circuits à base de PCM, l’utilisation d’outils tels que la simulation SPICE est nécessaire, impliquant le besoin de modèles compacts de PCM. Ces modèles doivent être rapides, continus, et précis ; à ce jour aucun modèle de la littérature ne remplit l’ensemble de ces exigences.L’objectif de cette thèse est de proposer un nouveau modèle compact de PCM, permettant la conception de circuits à base de PCM. Le modèle que nous avons développé est entièrement continu, validé sur une large gamme de tension, courant, temps et température. Construit à partir de connaissances physiques sur le fonctionnement du dispositif, il utilise un emballement thermique dans le mécanisme de Poole-Frenkel pour modéliser le seuil de commutation de la phase amorphe. L’introduction d’une variable de fraction fondue, dépendante uniquement de la température, ainsi que d’une vitesse de cristallisation dépendante de la fraction amorphe, permet la bonne modélisation de l’ensemble des dynamiques temporelles de changement d’état. De plus, une méthodologie d’extraction optimisée de la carte modèle est proposée à la suite de la validation du modèle, reposant sur une étude de sensibilité des paramètres de la carte modèle et un ensemble simple de caractérisations électriques, autorisant l’adaptation du modèle à chaque variation des procédés de fabrication pour garantir l’utilité du modèle à toutes les étapes du développement des technologies PCMPhase-change memory (PCM) is arguably the most mature emerging nonvolatile memory, foreseen for the replacement of the mainstream NOR-Flash memory for the future embedded applications. To allow the design of new PCM-based products, SPICE simulations, thus compact models, are needed. Those models need to be fast, robust and accurate; nowadays, no published model is able to fill all these requirements.The goal of this thesis is to propose a new compact model of PCM, enabling PCM-based circuit design. The model that we have developed is entirely continuous, and is validated on a wide range of voltage, current, time and temperature. Built on physical insights of the device, a thermal runaway in the Poole-Frenkel mechanism is used to model the threshold switching of the amorphous phase. Besides, the introduction of a new variable representing the melted fraction, depending only on the internal temperature, along with a crystallization speed depending on the amorphous fraction, allow the accurate modeling of all the temporal dynamics of the phase transitions. Moreover, an optimized model card extraction flow is proposed following the model validation, relying on a sensibility analysis of the model card parameters and a simple set of electrical characterizations. It enables the adjustment of the model to any process variation, and thus ensures its accuracy for the design modeling at every step of the technology development
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Bayle, Raphaël. "Simulation des mécanismes de changement de phase dans des mémoires PCM avec la méthode multi-champ de phase." Thesis, Institut polytechnique de Paris, 2020. http://www.theses.fr/2020IPPAX035.
Анотація:
Les mémoires à changement de phases ont basées sur la variation de résistance d’un petit volume de matériau à changement de phase, l'information binaire étant codée à travers la phase amorphe ou cristalline du matériau. Le changement de phase permettant leur programmation est induit par effet Joule sous l’application d’un courant électrique. L’alliageGe2Sb2Te5 est largement utilisé pour les mémoires à changement de phase, car il cristallise rapidement et sans changement de composition. Cependant, pour obtenir la fiabilité requise pour certaines applications à haute température, notamment dans le secteur automobile, un alliage Ge-Sb-Te enrichi en Geest utilisé par la société STMicroelectronics. La cristallisation de cet alliage s’accompagne d’une ségrégation des espèces et de la formation d’une nouvelle phase cristalline. La répartition spatiale des phases et espèces est décisive pour le bon fonctionnement du point mémoire ; il est ainsi très important de pouvoir la prédire.Les modèles de champ de phase permettent,notamment aux échelles de temps et d’espace impliquées dans l’étude des mémoires à changement de phase, le suivi d’interface entre plusieurs domaines occupés par des phases différentes. Dans ce travail de thèse, un modèle multi-champ de phase permettant de simuler l’évolution de la répartition des phases et des espèces dans ce nouvel alliage a été développé.Les paramètres du modèle ont été déterminés à partir des données disponibles sur l’alliage.Deux types de simulations ont été réalisées :d’une part, celle de la cristallisation, lors d’un recuit, d’une couche mince de matériau initialement déposé amorphe ; d’autre part, celle portant sur les changements de phase qui se produisent lors de l’application de champs de température typiques des opérations d’écriture des mémoires. La comparaison entre les résultats de simulations et expériences révèle que les caractéristiques principales des microstructures observées dans les expériences sont bien mises en évidence par le modèlePhase change memories (PCM) exploit the variation of resistance of a small volume of phase change material: the binary information is coded through the amorphous or crystalline phase of the material. The phase change is induced by an electrical current, which heats the material by the Joule effect. Because of its fast and congruent crystallization, theGe2Sb2Te5 alloy is widely used for PCM. Nevertheless, to get a better reliability at high temperatures, which is required e.g. for automotive applications, STMicroelectronics uses a Ge-rich GeSbTe alloy. In this alloy, chemical segregation and appearance of a new crystalline phase occur during crystallization. The distribution of phases and alloy components are critical for the proper functioning of the memory cell; thus, predictive simulations would be extremely useful. Phase field models are used for tracking interfaces between areas occupied by different phases. In this work, a multi-phase field model allowing simulating the distribution of phases and species in Ge-rich GeSbTe has been developed. The parameters of the model have been determined using available data on this alloy. Two types of simulations have been carried out, firstly to describe crystallization during annealing of initially amorphous deposited thin layer; secondly to follow the evolution of phase distribution during memory operation using temperature fields that are typical for those operations. Comparisons between simulations and experiments show that they both exhibit the same features
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Gasquez, Julien. "Conception de véhicules de tests pour l’étude de mémoires non-volatiles émergentes embarquées." Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0419.
Анотація:
La mémoire à changement de phase (PCM) s’inscrit dans la stratégie de développement de mémoires non-volatiles embarquées sur les nœuds technologiques avancés (sub 28nm). En effet, la mémoire Flash-NOR devient de plus en plus onéreuse à intégrer dans les technologies avec des diélectriques à forte permittivité et des grilles métalliques. Cette thèse a donc pour objectif principal de réaliser des véhicules de tests afin d’étudier un point mémoire novateur PCM + OTS et de proposer des solutions afin de combler ses lacunes et ses limites suivant les applications envisagées. L’étude a pour support deux technologies différentes le HCMOS9A et le P28FDSOI. La première sert de support pour le développement d’un véhicule de validation technologique du point mémoire OTS+PCM. La deuxième est, quant à elle, utilisée pour démontrer la surface obtenu avec un dimensionnement agressif du point mémoire. Enfin, un circuit de lecture optimisé pour ce point mémoire a été réalisé permettant la compensation des courants de fuites ainsi que la régulation des tensions de polarisations de la matrice au cours de la lecturePhase change memory (PCM) is part of the strategy to develop non-volatiles memories embedded in advanced technology nodes (sub 28nm). Indeed, Flash-NOR memory is becoming more and more expensive to integrate in technologies with high permittivity dielectrics and metallic gates. The main objective of this thesis is therefore to realize tests vehicles in order to study an innovative PCM + OTS memory point and to propose solutions to fill its gaps and limitations according to the envisaged applications. The study is based on two different technologies: HCMOS9A and P28FDSOI. The first one is used as support for the development of a technological validation vehicle of the OTS+PCM memory point. The second one is used to demonstrate the surface obtained with an aggressive sizing of the memory point. Finally, an optimized readout circuit for this memory point has been realized allowing the compensation of leakage currents as well as the regulation of the bias voltages of the matrix during the reading
14
Green, Craig Elkton. "Composite thermal capacitors for transient thermal management of multicore microprocessors." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44772.
Анотація:
While 3D stacked multi-processor technology offers the potential for significant computing advantages, these architectures also face the significant challenge of small, localized hotspots with very large heat fluxes due to the placement of asymmetric cores, heterogeneous devices and performance driven layouts. In this thesis, a new thermal management solution is introduced that seeks to maximize the performance of microprocessors with dynamically managed power profiles. To mitigate the non-uniformities in chip temperature profiles resulting from the dynamic power maps, solid-liquid phase change materials (PCMs) with an embedded heat spreader network are strategically positioned near localized hotspots, resulting in a large increase in the local thermal capacitance in these problematic areas.
Theoretical analysis shows that the increase in local thermal capacitance results in an almost twenty-fold increase in the time that a thermally constrained core can operate before a power gating or core migration event is required. Coupled to the PCMs are solid state coolers (SSCs) that serve as a means for fast regeneration of the PCMs during the cool down periods associated with throttling events. Using this combined PCM/SSC approach allows for devices that operate with the desirable combination of low throttling frequency and large overall core duty cycles, thus maximizing computational throughput. The impact of the thermophysical properties of the PCM on the device operating characteristics has been investigated from first principles in order to better inform the PCM selection or design process.
Complementary to the theoretical characterization of the proposed thermal solution, a prototype device called a "Composite Thermal Capacitor (CTC)" that monolithically integrates micro heaters, PCMs and a spreader matrix into a Si test chip was fabricated and tested to validate the efficacy of the concept. A prototype CTC was shown to increase allowable device operating times by over 7X and address heat fluxes of up to ~395 W/cm2. Various methods for regenerating the CTC have been investigated, including air, liquid, and solid state cooling, and operational duty cycles of over 60% have been demonstrated.
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Suri, Manan. "Technologies émergentes de mémoire résistive pour les systèmes et application neuromorphique." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-00935190.
Анотація:
La recherche dans le domaine de l'informatique neuro-inspirée suscite beaucoup d'intérêt depuis quelques années. Avec des applications potentielles dans des domaines tels que le traitement de données à grande échelle, la robotique ou encore les systèmes autonomes intelligents pour ne citer qu'eux, des paradigmes de calcul bio-inspirés sont étudies pour la prochaine génération solutions informatiques (post-Moore, non-Von Neumann) ultra-basse consommation. Dans ce travail, nous discutons les rôles que les différentes technologies de mémoire résistive non-volatiles émergentes (RRAM), notamment (i) Phase Change Memory (PCM), (ii) Conductive-Bridge Memory (CBRAM) et de la mémoire basée sur une structure Metal-Oxide (OXRAM) peuvent jouer dans des dispositifs neuromorphiques dédies. Nous nous concentrons sur l'émulation des effets de plasticité synaptique comme la potentialisation à long terme (Long Term Potentiation, LTP), la dépression à long terme (Long Term Depression, LTD) et la théorie STDP (Spike-Timing Dependent Plasticity) avec des synapses RRAM. Nous avons développé à la fois de nouvelles architectures de faiblement énergivore, des méthodologies de programmation ainsi que des règles d'apprentissages simplifiées inspirées de la théorie STDP spécifiquement optimisées pour certaines technologies RRAM. Nous montrons l'implémentation de systèmes neuromorphiques a grande échelle et efficace énergétiquement selon deux approches différentes: (i) des synapses multi-niveaux déterministes et (ii) des synapses stochastiques binaires. Des prototypes d'applications telles que l'extraction de schéma visuel et auditif complexe sont également montres en utilisant des réseaux de neurones impulsionnels (Feed-forward Spiking Neural Network, SNN). Nous introduisons également une nouvelle méthodologie pour concevoir des neurones stochastiques très compacts qui exploitent les caractéristiques physiques intrinsèques des appareils CBRAM.
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Coué, Martin. "Caractérisation électrique et étude TEM des problèmes de fiabilité dans les mémoires à changement de phase enrichis en germanium." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT018/document.
Анотація:
Dans cette thèse, nous proposons une étude détaillée des mécanismes responsables de la perte de données dans les mémoires à changement de phase enrichies en germanium (Ge-rich PRAMs), à savoir la dérive de la résistance au cours du temps et la recristallisation de la phase amorphe. Nous commençons par une présentation du contexte dans lequel s'inscrit cette étude an donnant un aperçu rapide du marché des mémoires à semiconducteur et une comparaison des mémoires non volatiles émergentes. Les principes de fonctionnement de la technologie PRAM sont introduits, avec ses avantages, ses inconvénients, ainsi que la physique régissant le processus de cristallisation dans les matériaux à changement de phase, avant de décrire les problèmes de fiabilité qui nous intéressent.Une caractérisation électrique complète de dispositifs intégrant des alliages de GST enrichi en germanium est ensuite proposée, en commençant par la caractérisation des matériaux utilisés dans nos cellules, introduisant alors les avantages des alliages enrichis en Ge sur le GST standard. Les performances électriques des dispositifs intégrant ces matériaux sont analysées, avec une étude statistique des caractéristiques SET & RESET, de la fenêtre de programmation, de l'endurance et de la vitesse de cristallisation. Nous nous concentrons ensuite sur le thème principal de cette thèse en analysant la dérive en résistance de l'état SET de nos dispositifs Ge-rich, ainsi que les performances de rétention de l'état RESET.Dans la dernière partie, nous étudions les mécanismes physiques impliqués dans ces phénomènes en fournissant une étude détaillée de la structure des cellules, grâce à l'utilisation de la Microscopie Électronique en Transmission (MET). Les conditions et configurations expérimentales sont décrites, avant de présenter les résultats qui nous ont permis d'aller plus loin dans la compréhension de la dérive en résistance et de la recristallisation de la phase amorphe dans les dispositifs Ge-rich. Une discussion est finalement proposée, reliant les résultats des caractérisations électriques avec ceux des analyses TEM, conduisant à de nouvelles perspectives pour l'optimisation des dispositifs PRAMsIn this thesis we provide a detailed study of the mechanisms responsible for data loss in Ge-rich Ge2Sb2Te5 Phase-Change Memories, namely resistance drift over time and recrystallization of the amorphous phase. The context of this work is first presented with a rapid overview of the semiconductor memory market and a comparison of emerging non-volatile memories. The working principles of PRAM technology are introduced, together with its advantages, its drawbacks, and the physics governing the crystallization process in phase-change materials, before describing the reliability issues in which we are interested.A full electrical characterization of devices integrating germanium-enriched GST alloys is then proposed, starting with the characterization of the materials used in our PCM cells and introducing the benefits of Ge-rich GST alloys over standard GST. The electrical performances of devices integrating those materials are analyzed, with a statistical study of the SET & RESET characteristics, programming window, endurance and crystallization speed. We then focus on the main topic of this thesis by analyzing the resistance drift of the SET state of our Ge-rich devices, as well as the retention performances of the RESET state.In the last part, we investigate on the physical mechanisms involved in these phenomena by providing a detailed study of the cells' structure, thanks to Transmission Electron Microscopy (TEM). The experimental conditions and setups are described before presenting the results which allowed us to go deeper into the comprehension of the resistance drift and the recrystallization of the amorphous phase in Ge-rich devices. A discussion is finally proposed, linking the results of the electrical characterizations with the TEM analyses, leading to new perspectives for the optimization of PRAM devices
17
Zita, Francescovito. "Modello dinamico del cambiamento di fase in memorie PCM." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2019. http://amslaurea.unibo.it/17673/.
Анотація:
L’evoluzione dei dispositivi di memoria tende alla ricerca di tecnologie sempre maggiormente scalabili e che rispettino livelli prestazionali sempre più stringenti; infatti, le memorie giocano un ruolo di fondamentale importanza nello sviluppo dei circuiti elettronici. Un contributo significativo a tale evoluzione è stato dato dalla caratterizzazione di nuovi materiali con proprietà chimico-fisiche interessanti. Un esempio significativo è una classe di dispositivi chiamati PCM (Phase-Change Memory), che sfruttano un materiale in grado di assumere fase amorfa o cristallina per svolgere la funzione di memoria programmabile. In questa trattazione viene considerato un modello dinamico che descrive il cambiamento di fase in memorie PCM.
18
Pehrson, Alan L. "The Effects of Early Postnatal PCP Administration on Performance in Locomotor Activity, Reference Memory, and Working Memory Tasks in C57BL/6 Mice." VCU Scholars Compass, 2007. http://scholarscompass.vcu.edu/etd/878.
Анотація:
There is a growing consensus, based on several converging lines of evidence, which suggests schizophrenia is the product of a developmental insult occurring in the late 2 nd or early 3 rd trimester. Additionally, it has been observed that adults who abuse the noncompetitive NMDA antagonist PCP present with symptoms that mimic schizophrenia, such as hallucinations, formal thought disorder, delusions, unstable or flattened affect, social withdrawal, and impaired cognition. Thus, several labs have attempted to use early postnatal PCP administration in rodents as a drug model of schizophrenia. The current study investigated the cognitive effects of early postnatal PCP administration in C57BL/6 mice. Mouse pups received daily administrations of either 10.0 mg/kg PCP or saline on postnatal (PN) days 5-15. After weaning, pups were assessed in locomotor activity, a reference memory task in the Morris water maze, and a spatial delayed alternation task in the T-maze. Additionally, pups were subjected to a pharmacological challenge with PCP in the delayed alternation task. In males, No significant differences were detected between PCP- and saline-treated animals in locomotor activity. However, in the reference memory task, PCP-treated males had significantly longer path lengths, and displayed a non-significant trend towards increased thigmotaxia. Furthermore, males treated with PCP displayed significantly reduced accuracy in the working memory task without differences in choice latency, and were more sensitive to the acute effects of PCP than saline controls. Finally, these deficits were associated with a 29% increase in NR1 subunit expression in the hippocampus. Interestingly, PCP-treated female mice were not significantly different from saline-treated controls in locomotor activity, reference memory task performance, or delayed alternation performance, did not have a significantly different reaction to pharmacological challenge with PCP in the delayed alternation task, and did not demonstrate any changes in NR1 subunit expression. The present study provided the first evidence that early postnatal PCP administration in C57BL/6 mice can produce selective memory pairments. However, this effect was limited to the male mice, suggesting that the female mice were protected somewhat from these effects.
19
Mills, Christopher Alan. "Investigations into low band-gap, semiconducting polymers." Thesis, Bangor University, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340950.
20
Desai, Avanti N. "Effects of Perinatal Polychlorinated Biphenyl Mixtures on Estrogen Receptor Beta, Hippocampus, and Learning and Memory." Bowling Green State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1182713137.
21
Rajagopal, Lakshmi. "Neonatal Phencyclidine (PCP) induced deficits in rats: A behavioural investigation of relevance to schizophrenia." Thesis, University of Bradford, 2011. http://hdl.handle.net/10454/5404.
Анотація:
Background: The main aim of the studies in this thesis is to provide insights into the neonatal phencyclidine (PCP) induced deficits in male and female rats as a neurodevelopmental animal model of schizophrenia. Methods: Both male and female rats were treated with neonatal PCP on postnatal days (PNDs) 7,9 and 11 or vehicle, followed by weaning on PND 21-22. The rats were then tested in behavioural paradigms such as novel object recognition, spatial memory and social interaction in their adolescent and adult stages and were also tested with acute treatment of typical and atypical antipsychotic agents. Results: Neonatal PCP treatment (10 & 20 mg/kg in males and 10 mg/kg in females; once a day for 3 days on PND 7,9 and 11) caused novel object recognition and spatial memory impairment in male and female rats both in the adolescent (PND35-56) and in the adult stages (PND>56) (chapter 2) and robust deficits in social interaction behaviours in the adolescent stage. The SI deficits were observed in adulthood in female but not in male rats thereby establishing a sex-specific social behavioural deficit (chapter 3). The object memory and social interaction deficits induced by neonatal PCP treatment were reversed following acute risperidone but not haloperidol. Finally, the temporal profile of this treatment regime was investigated and the male and female animals were tested on PND 190 and PND 365. The animals did not have any challenge dose of PCP during their testing stage. The result showed that there was significant deficit in object and spatial recognition memory in both male and female animals at both time points, thereby establishing enduring deficits. Conclusion: Given the heterogeneity of the schizophrenic disorder and its complex aetiology, it is understandably difficult to find animal models that completely mimic most or all of the symptoms associated with the disorder. However, data from the studies in this thesis support the use of neonatal PCP as a valid animal model of cognitive and negative symptoms, and explores the effect of antipsychotics in understanding the model. Also, in light of the efficacy of neonatal PCP to produce robust object, spatial memory and social interaction deficits in rats, it appears that this model may be a useful tool to investigate the potential of novel therapeutic candidates that may help improve therapy and understand the illness.
22
CURRAN, CHRISTINE PERDAN. "THE ROLE OF ARYL HYDROCARBON RECEPTOR AND CYP1A2 IN PCB-INDUCED DEVELOPMENTAL NEUROTOXICITY." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1196254087.
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Stark, Love. "Outlier detection with ensembled LSTM auto-encoders on PCA transformed financial data." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-296161.
Анотація:
Financial institutions today generate a large amount of data, data that can contain interesting information to investigate to further the economic growth of said institution. There exists an interest in analyzing these points of information, especially if they are anomalous from the normal day-to-day work. However, to find these outliers is not an easy task and not possible to do manually due to the massive amounts of data being generated daily. Previous work to solve this has explored the usage of machine learning to find outliers in these financial datasets. Previous studies have shown that the pre-processing of data usually stands for a big part in information loss. This work aims to study if there is a proper balance in how the pre-processing is carried out to retain the highest amount of information while simultaneously not letting the data remain too complex for the machine learning models. The dataset used consisted of Foreign exchange transactions supplied by the host company and was pre-processed through the use of Principal Component Analysis (PCA). The main purpose of this work is to test if an ensemble of Long Short-Term Memory Recurrent Neural Networks (LSTM), configured as autoencoders, can be used to detect outliers in the data and if the ensemble is more accurate than a single LSTM autoencoder. Previous studies have shown that Ensemble autoencoders can prove more accurate than a single autoencoder, especially when SkipCells have been implemented (a configuration that skips over LSTM cells to make the model perform with more variation). A datapoint will be considered an outlier if the LSTM model has trouble properly recreating it, i.e. a pattern that is hard to classify, making it available for further investigations done manually. The results show that the ensembled LSTM model proved to be more accurate than that of a single LSTM model in regards to reconstructing the dataset, and by our definition of an outlier, more accurate in outlier detection. The results from the pre-processing experiments reveal different methods of obtaining an optimal number of components for your data. One of those is by studying retained variance and accuracy of PCA transformation compared to model performance for a certain number of components. One of the conclusions from the work is that ensembled LSTM networks can prove very powerful, but that alternatives to pre-processing should be explored such as categorical embedding instead of PCA.Finansinstitut genererar idag en stor mängd data, data som kan innehålla intressant information värd att undersöka för att främja den ekonomiska tillväxten för nämnda institution. Det finns ett intresse för att analysera dessa informationspunkter, särskilt om de är avvikande från det normala dagliga arbetet. Att upptäcka dessa avvikelser är dock inte en lätt uppgift och ej möjligt att göra manuellt på grund av de stora mängderna data som genereras dagligen. Tidigare arbete för att lösa detta har undersökt användningen av maskininlärning för att upptäcka avvikelser i finansiell data. Tidigare studier har visat på att förbehandlingen av datan vanligtvis står för en stor del i förlust av emphinformation från datan. Detta arbete syftar till att studera om det finns en korrekt balans i hur förbehandlingen utförs för att behålla den högsta mängden information samtidigt som datan inte förblir för komplex för maskininlärnings-modellerna. Det emphdataset som användes bestod av valutatransaktioner som tillhandahölls av värdföretaget och förbehandlades genom användning av Principal Component Analysis (PCA). Huvudsyftet med detta arbete är att undersöka om en ensemble av Long Short-Term Memory Recurrent Neural Networks (LSTM), konfigurerad som autoenkodare, kan användas för att upptäcka avvikelser i data och om ensemblen är mer precis i sina predikteringar än en ensam LSTM-autoenkodare. Tidigare studier har visat att en ensembel avautoenkodare kan visa sig vara mer precisa än en singel autokodare, särskilt när SkipCells har implementerats (en konfiguration som hoppar över vissa av LSTM-cellerna för att göra modellerna mer varierade). En datapunkt kommer att betraktas som en avvikelse om LSTM-modellen har problem med att återskapa den väl, dvs ett mönster som nätverket har svårt att återskapa, vilket gör datapunkten tillgänglig för vidare undersökningar. Resultaten visar att en ensemble av LSTM-modeller predikterade mer precist än en singel LSTM-modell när det gäller att återskapa datasetet, och då enligt vår definition av avvikelser, mer precis avvikelse detektering. Resultaten från förbehandlingen visar olika metoder för att uppnå ett optimalt antal komponenter för dina data genom att studera bibehållen varians och precision för PCA-transformation jämfört med modellprestanda. En av slutsatserna från arbetet är att en ensembel av LSTM-nätverk kan visa sig vara mycket kraftfulla, men att alternativ till förbehandling bör undersökas, såsom categorical embedding istället för PCA.
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Zavalloni, Francesco. "Simulazione in ambiente Matlab di calcolo in memoria basato su celle a cambiamento di fase." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021.
Анотація:
L'obiettivo dell'elaborato è quello di analizzare le prestazioni di un circuito analogico per l'In-memory Computing basato su celle di memoria a cambiamento di fase. Con questo scopo si è sviluppato un modello informatico grazie al software Matlab & Simulink. Questo modello permette di simulare il comportamento del circuito analogico sotto indagine in particolari contesti operativi, inoltre ne da una stima delle prestazioni in particolari applicazioni, come l'elaborazione delle immagini. Il modello permette di svolgere simulazioni con tempistiche molto inferiori rispetto ad un simulatore circuitale tradizionale.
25
Moura, Paula Jaqueline de. "Contribuição para o estudo da memória de reconhecimento social em ratos." Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/41/41135/tde-26092008-175018/.
Анотація:
O paradigma intruso-residente vem sendo intensamente empregado em estudos para avaliar a memória de reconhecimento social em roedores. Tipicamente, ratos adultos, denominados residentes, são expostos a dois encontros sucessivos, de 5 minutos cada, com um mesmo rato juvenil ou com ratos juvenis diferentes, denominados intrusos; o intervalo de tempo entre encontros é 30 minutos. A quantidade de comportamentos sociais do residente (no segundo encontro) em relação a um intruso familiar é substancialmente menor do que o observado no primeiro encontro, o que não ocorre quando o segundo encontro envolve um juvenil novo; esse resultado caracteriza a memoria de reconhecimento social. Se o intervalo de tempo entre os encontros é aumentado para 60 minutos, a redução da investigação social do intruso familiar por parte do residente desaparece, levando à conclusão de que a memória de reconhecimento social seria um mecanismo para retenção temporária de informações. O objetivo central do presente trabalho foi contribuir para o entendimento da memória de reconhecimento social em ratos. Foram realizados três experimentos. No primeiro experimento avaliou-se se a expressão de comportamentos sociais e também da memória de reconhecimento social estão sujeitos à modulação temporal. No segundo experimento avaliou-se em que extensão o aumento do tempo de exposição ao intruso durante o primeiro encontro resulta num aumento da duração da memoria de reconhecimento social. No terceiro experimento avaliou-se se um procedimento de rotina na maioria dos laboratorios, o transporte dos animais da sala de experimentos para o biotério, interfere na memória de reconhecimento social, quando realizado 0,5 ou 6 horas após o primeiro encontro. Os resultados mostraram que (1) a expressão de comportamentos sociais e a memória de reconhecimento social estão sujeitos à modulação temporal, sendo mais intensos quando os testes são realizados na fase inativa (Capítulo 2), de modo que este fator deve ser levado em consideração quando do planejamento de experimentos envolvendo sociabilidade, (2) o aumento da duração do primeiro encontro para 2 horas ou mais revelou uma memória de reconhecimento social que dura pelo menos 24 horas (Capítulo 3), permitindo questionar que se trate de um dispositivo de curta duração, e (3) o transporte dos animais para o biotério 0,5 horas, mas não 6 horas, depois do primeiro encontro, prejudica a memória de reconhecimento social (Capítulo 4), indicando que se deve estar atento às rotinas laboratoriais pois as mesmas podem interferir no desempenho dos animais em testes de memória. Em associação com essas relevantes observações experimentais, foram propostas estratégias de análise dos dados gerados com esse tipo de experimentação e também discussões conceituais sobre a caracterização da memória de reconhecimento social, que contribuem marcadamente para essa área de estudos.The intruder-resident paradigm has been extensively employed in studies of social recognition memory in rodents. Typically, adult rats, named residents, are exposed to two 5-min successive encounters with the same juvenile intruder or with two different juveniles; the time interval between the encounters is 30 min. The amount of social behaviors exhibited by the resident rats towards the same intruder juvenile in the second encounter is substantially smaller when compared to both that seen in the first encounter and that seen towards a different juvenile; these results characterize social recognition memory. When the time interval between encounters is increased to 60 min, that reduction of the investigation towards the familiar juvenile intruder vanishes, which is seen as evidence that social recognition memory corresponds to a short-term memory mechanism. The aim of this study was to contribute for our understanding of social recognition memory in rats. Three experiments were run. The first experiment evaluated to which extent both social behaviors and social recognition memory are influenced by temporal phase effects. The second experiment evaluated to which extent the increase in the duration of the first encounter renders social recognition memory longer. The third experiment evaluated to which extent the transportation of the resident rats from the experimental room to the animal facilities either 0.5 or 6 hours after the first encounter, interferes with social recognition memory. The results showed that (1) the expression of social behaviors and of the social recognition memory are modulated temporal phase effects, being stronger when animals are tested in their inactive phase (Chapter 2); thus, this aspect has to be considered in studies on sociability, (2) the increase of the first encounter duration for 2 hours or longer renders social recognition memory to last at least 24 hours (Chapter 3); this allows to question that social recognition memory corresponds to a short-term memory mechanism, and (3) transportation of the resident rats to the animal facilities 0.5, but not 6 hours, after the end of the first encounter disrupts social recognition memory (Chapter 4), indicating that one has to be cautious about usual laboratory routines, because they may interfere with performance of the memory tasks when executed a short time after training the animals.Associated with these relevant experimental observations, these studies allowed proposing novel strategies for data analysis and discussing conceptual issues about the characterization of social recognition memory that give a substantial contribution for this area.
26
Dvořák, Miroslav. "Disk na bázi paměti FLASH." Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2012. http://www.nusl.cz/ntk/nusl-236569.
Анотація:
The work deals with flash technology, the history of its development, current application of this technology and discusses the advantages and disadvantages of flash memories. It describes the integration of flash technology into mass storage devices and commonly used mechanisms that suppress the flash shortcomings for such application. The next part of the work focuses on analysis of commonly used buses for flash storage devices. Based on these theoretical foundations, text presents way to develop own flash based disk. The work focuses mainly on finding the most accessible platform for connecting the disk to personal computers - USB, on PCB design for storage module in Eagle CAD and implementation of necessary firmware for MCU and VHDL design for FPGA, that provide the disk functionality. At the end the work summarizes the results and outlines the way of further development.
27
Souza, Lucas Canto de. "Participação do sistema histaminérgico em estruturas límbicas sobre a memória de esquiva inibitória em camundongos." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/59/59134/tde-01022016-092907/.
Анотація:
Vários estudos utilizando modelos animais têm demonstrado que estruturas límbicas como amídala (AMD), hipocampo dorsal (HD) e córtex pré-frontal medial (CPFm) participam na consolidação da memória associada às emoções. Considerando que a síntese de novas proteínas é necessária para o processo de consolidação de memórias, e que a combinação entre o uso de inibidores de síntese proteica e diferentes intensidades de estímulo incondicionado têm gerado respostas comportamentais distintas com relação à consolidação da memória emocional, o presente trabalho se propôs a investigar a hipótese de a consolidação da memória aversiva na AMD, no HD e no CPFm, associada a síntese proteica, ocorre de maneira diferenciada nessas três estruturas, de acordo com a intensidade do estímulo aversivo, bem como se a expressão de genes envolvidos na transmissão histaminérgica seria modificada ao longo das fases da memória emocional aversiva. O objetivo do presente estudo foi avaliar o papel da síntese proteica na AMD, HD e CPFm no processo de consolidação de uma memória aversiva baseada em condicionamento aversivo moderado ou intenso; investigar a expressão de genes ligados a transmissão histaminérgica na AMD, HD e CPFm após o condicionamento aversivo intenso. Para este fim dois experimentos foram realizados: No experimento 1 a anisomicina (ANI) foi microinjetada bilateralmente na AMD ou HD ou CPFm de camundongos antes de serem submetidos a tarefa de esquiva inibitória do tipo step-down utilizando duas intensidades de estímulo incondicionado: moderada ou intensa. No experimento 2, as variações da expressão dos genes da enzima HDC (histidina descarboxilase responsável pela síntese de histamina) e dos receptores H1, H2 e H3 foram analisadas em diferentes espaços temporais através da reação de polimerase em cadeia em tempo real. Os resultados do experimento 1 demonstram que microinjeção de ANI no CPFm prejudica a consolidação da memória de esquiva inibitória com estímulo incondicionado moderado ou intenso, porém quando administrada intra-AMD e intra-HD, a ANI só prejudica a consolidação da memória de esquiva inibitória com estímulo incondicionado intenso. No experimento 2 demonstra que durante a consolidação da memória aversiva intensa há diminuição nos níveis de expressão dos genes: HDC no HD, Hrh3 na AMD, Hrh1 e Hrh3 no CPFm. Já na fase de evocação, na AMD há aumento e diminuição na expressão dos genes HDC e Hrh3, respectivamente; no HD há aumento na expressão dos genes Hrh2 e Hrh3 e no CPFm há aumento na expressão do gene HDC e diminuição nos genes Hrh1 e Hrh3. Durante a reconsolidação há diminuição na expressão dos genes HDC e Hrh3 e aumento do gene Hrh1 na AMD. No DH há aumento com relação ao gene Hrh1, e no CPFm há aumento do gene HDC e diminuição na expressão dos genes Hrh1 e Hrh3. No presente estudo conclui-se que em situações com moderado grau de aversividade, a consolidação dessa experiência não dependerá de síntese proteica na AMD e no HD, mas sim no CPFml. No entanto, em situações com elevado grau de aversividade, a síntese proteica na AMD, HD e CPFm é essencial para a consolidação de tal experiência. Além disso, os genes HDC, Hrh1, Hrh2 e Hrh3 se expressam distintamente na AMD, HD e CPFm ao longo da escala temporal da consolidação, evocação e reconsolidação da formação de memórias de medo.Several studies using animal models have shown that limbic structures like the amygdala (AMG), dorsal hippocampus (DH) and medial prefrontal cortex (mPFC) are involved in emotional memory consolidation. Whereas the synthesis of new proteins is necessary for memory consolidation process, and that opposite results related to the interaction of protein synthesis inhibitors and foot-shock intensity on memory consolidation have been reported, the present study aims to investigate the hypothesis of protein synthesis in AMG, the DH and mPFC associated with the consolidation of aversive memory occurs differently in these three structures, according to the intensity of the aversive stimulus and the expression of proteins involved in histaminergic transmission would be modified during the process of consolidation and emotional expression of aversive memory. The aim of this study was to evaluate the role of protein synthesis in AMG, DH and mPFC in consolidation of aversive memory based on moderate and intense conditioning; to investigate the expression of proteins related to histaminergic transmission in AMG, DH and mPFC after intense aversive conditioning. For this purpose two experiments were performed: in experiment 1 the anisomycin (ANI) was bilaterally microinjected into AMG or DH or mPFC of mice before being submitted the step-down inhibitory avoidance task using two unconditioned stimulus intensities: moderate or intense. In experiment 2, the variations in the gene expression of HDC enzyme (histidine decarboxylase - responsible for histamine synthesis) and the H1, H2 and H3 receptors were analyzed at different temporal spaces by real-time polymerase chain reaction (RT-PCR). The results of the first experiment demonstrate that microinjection of ANI in mPFC impairs the consolidation of inhibitory avoidance memory with moderate or intense unconditioned stimulus, however when administered intra-AMG and intra DH, ANI only impairs the consolidation of inhibitory avoidance memory under an intensive unconditioned stimulus. The experiment 2 demonstrates that during the consolidation of intense aversive memory there is a decrease of the genes expression levels: HDC in the dorsal hippocampus, Hrh3, Hrh1 in the amygdala, and Hrh3 in the medial prefrontal cortex. During retrieval the HDC and Hrh3 genes expression levels are increased and decreased, respectively in the AMG; the Hhr2 and Hrh3 genes expression levels are increased in the DH, and in the mPFC the HDC gene expression level is increased, and the Hrh1 and Hrh3 are decreased. During reconsolidation the amygdalas HDC and Hrh3 genes expression levels are decreased and the Hrh1 gene is increased. In the DH the Hrh1 gene levels are elevated and in the mPFC the HDC gene expression level is increased and the Hrh1 and Hrh3 are decreased. In the current study we conclude that under moderate aversiveness situations, the consolidation of this experience does not depend on protein synthesis in the AMG and in the DH, but in the mPFC. However, in situations with a high level of adversity, protein synthesis in this three structures are essential for the consolidation of such experience. In addition, the histaminergic genes are distinctly expressed in the AMG, DH and mPFC along the time scale of consolidation, retrieval and reconsolidation of the formation of fear memories.
28
Cook, Samantha. "The Effect of oestrogen in a series of models related to schizophrenia and Alzheimer¿s disease. A preclinical investigation into the effect of oestrogen on memory, executive function on and anxiety in response to pharmacological insult and in a model of natural forgetting." Thesis, University of Bradford, 2012. http://hdl.handle.net/10454/5508.
Анотація:
Alzheimer¿s disease is associated with aging and is characterised by a progressive cognitive decline. Its onset in women coincides with the abrupt depletion of ovarian steroids prompting the investigation of utilising oestrogen replacement therapy as restoration or a preventative measure. Gonadal steroids have also recently been implicated in other disease states, particularly schizophrenia. In addition to the cognitive decline, sufferers of Alzheimer¿s disease and schizophrenia display anxiety related behaviour which gonadal steroids have also been shown to ameliorate. In this thesis several paradigms were used to investigate the effects of oestradiol benzoate (EB) on cognition and anxiety, utilising the NMDA receptor antagonist PCP, the muscarinic receptor antagonist scopolamine and the dopamine releasing agent amphetamine to induce a cognitive deficit in rats by different pharmacological mechanisms. The thesis also investigated the effects of EB on a delay dependent cognitive deficit model of forgetfulness in natural aging. Results showed that subchronic PCP dosing failed to induce a significant deficit in the novel object recognition task. Locomotor activity tests demonstrated that the PCP treated rats were sensitised to the treatment suggesting that the PCP dosing regimen was successful. There was no significant effect of oestrogen in the reversal learning model or in the plus maze task designed to explore EB¿s effects on anxiety. However, in the latter task there was a trend towards an anxiogenic effect of EB. Results from the delay dependent model of forgetfulness in natural aging demonstrated that EB could enhance recognition memory, but not spatial memory. The results are discussed in the context of the role of gonadal steroids especially oestrogen in combating the cognitive decline seen in schizophrenia, neurodegenerative disease and natural aging.
29
Alves, Fabio Cesar. "Vivência, reflexão e combate: sobre Memórias do cárcere." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/8/8151/tde-31032014-112723/.
Анотація:
Este trabalho propõe uma interpretação da obra Memórias do cárcere (1953), de Graciliano Ramos, tendo como eixo de análise a configuração do narrador no relato. Por meio dela, o estudo busca desentranhar, do texto que propõe a confissão do sujeito à beira da cova, os materiais trabalhados pelo escritor. Desse modo, pode-se apreender a estruturação interna desse material como sedimentação de uma realidade historicamente pautada. A hipótese é a de que a reconstrução da experiência de cadeia por parte do narrador situado entre os anos 1940 e 1950 permite-lhe, a partir da fusão de vozes e temporalidades e da reflexão contundente sobre uma situação-limite, pôr em questão aspectos da sociabilidade brasileira, impasses situados no âmbito da política partidária e dilemas que caracterizam a complexa situação, na modernidade, do intelectual dependente e empenhado.This study intends to offer an interpretation of the work Memórias do cárcere (1953), by Graciliano Ramos, having as its axis of analysis the configuration of the narrator throughout the account. By means of this configuration, the study aims at extracting, from the text that offers the confession of a subject who has one foot in the grave, the materials that were addressed by the writer. In this way, its possible to apprehend the internal structuration of this material as the sedimentation of a historically determined reality. The hypothesis is that, between the 1940s and 1950s, the narrators reconstruction of his experience in jail enables him, through the fusion of voices and temporalities and by means of an incisive reflection on a limit-situation, to question aspects of the Brazilian sociability, vicissitudes pertaining to the realm of party politics and dilemmas that characterize the complex situation of the dependent and engaged intellectual in modernity.
30
Gomes, Kátia Regina Maruyama. "Padrão de expressão gênica e localização tecidual no rato de um novo membro do Cluster gênico da enzima conversora da angiotensina I: variante-4." Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/5/5131/tde-28012009-162314/.
Анотація:
O sistema renina-angiotensina (SRA) é de fundamental importância para a manutenção da homeostasia cardiovascular. A enzima conversora de angiotensina I (ECA) é um elemento crítico na cascata de ativação das diversas substâncias ativas do SRA. Evidências obtidas em nosso laboratório por análise de genômica comparativa e confirmadas através de clonagem de segmentos de cDNA sugerem que esta família de proteínas está incompleta. Nossos dados apontam para existência de duas novas isoformas da ECA, que aqui denominaremos Variante-3 (Var-3) e Variante-4 (Var-4), localizadas no mesmo locus da ECA. Neste trabalho, analisamos simultaneamente o padrão de expressão das 4 Variantes da ECA e ECA2 em 30 tecidos do rato utilizando a técnica de qRT-PCR. A Variante 4, cuja ação ainda é desconhecida e está sendo investigada em nosso laboratório, apresenta predominantemente expressão no testículo e em quantidade relativamente baixa no ventrículo esquerdo. Utilizando a técnica de hibridização in situ no testículo, verificamos que a marcação positiva da Var- 4 pode ou não ser co-localizada com a Var-2 dependendo do estágio celular em que se encontra no túbulo seminífero. Verificou-se que as espermátides redondas são as células que expressam a Var-4 nos túbulos seminíferos. Em conjunto, estes dados mostram que as Variantes 1, 2, 3 e 4 da ECA apresentam expressão tecido-específica. O padrão de expressão da Var-4, principal objeto deste trabalho, é consistente com a idéia de que esta variante gênica pode estar envolvida com o controle da espermatogênese e em processos cardíacos, até então não caracterizadosThe renin-angiotensin system (RAS) is essential to maintain the cardiovascular homeostasis. The angiotensin-converting enzyme (ACE) is a critical point in the biochemical activation of several active substances, notably angiotensin II. Evidence obtained in our laboratory using comparative genomic analysis and confirmed by cDNA cloning suggests that this protein family is incomplete and point to the existence of two new isoforms of ACE that from now on are denominated Variant-3 (Var-3) and Variant-4 (Var-4), located within the same ACE locus. In the present work we simultaneously analyzed the expression pattern of the 4 ACE gene variants in 30 different tissues of rats. The variant 4, whose mechanism of action remains unknown and it is being presently investigated in our laboratory is mainly expressed in testis and in relatively low quantity in left ventricle. Using in situ hybridization technique in testis, we verified that positive labeling of Var-4 is distinct from Var-2, suggesting that they may play distinct functions during the spermatogenesis process. Taking together, we provide direct evidence that the ACE gene locus contain, 4 variants instead of 2 and they show a specific cell tissue pattern of expression. Mostly important, the Var-4 is primarily expressed in testis and the data suggest that it may be involved with spermatogenesis control, and in cardiac processes presently unknown
31
Hummel, Václav. "Framework pro hardwarovou akceleraci 400Gb sítí." Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2017. http://www.nusl.cz/ntk/nusl-363862.
Анотація:
The NetCOPE framework has proven itself as a viable framework for rapid development of hardware accelerated wire-speed network applications using Network Functions Virtualization (NFV). To meet the current and future requirements of such applications the NetCOPE platform has to catch up with upcoming 400 Gigabit Ethernet. Otherwise, it may become deprecated in following years. Catching up with 400 Gigabit Ethernet brings many challenges bringing necessity of completely different way of thinking. Multiple network packets have to be processed each clock cycle requiring a new concept of processing. Advanced memory management is used to ensure constant memory complexity with respect to the number of DMA channels without any impact on performance. Thanks to that, even more than 256 completely independent DMA channels are feasible with current technology. A lot of effort was made to create the framework as generic as possible allowing deployment of 400 Gigabit Ethernet and beyond. Emphasis is put on communication between the framework and host computer via PCI Express technology. Multiple Ethernet ports are also considered. The proposed system is prepared to be deployed on the family of COMBO cards, used as a reference platform.
32
Preciados, Mark. "Exposure to Estrogenic Endocrine Disrupting Chemicals and Brain Health." FIU Digital Commons, 2018. https://digitalcommons.fiu.edu/etd/3741.
Анотація:
The overall objective of this dissertation was to examine exposures to the estrogenic endocrine disrupting chemicals (EEDCs), phthalates, bisphenol-A (BPA), and the metalloestrogens cadmium (Cd), arsenic (As), and manganese (Mn) in an older geriatric aged-population and examine associations with brain health. Given the evidence that EEDCs affect brain health and play a role in the development of cognitive dysfunction and neurodegenerative disease, and the constant environmental exposure through foods and everyday products has led this to becoming a great public health concern. Using a bioinformatic approach to find nuclear respiratory factor 1 (NRF1) gene targets involved in mitochondrial dysfunction, that are both estrogen and EEDC-sensitive, we found several genes involved in the gene pathways of Alzheimer’s disease (AD): APBB2, EIF2S1, ENO1, MAPT, and PAXIP1. Using the Center for Disease Control and Prevention (CDC), National Health and Nutrition Examination Survey (NHANES) 2011-2014 datasets to assess EEDC bioburden and associations with surrogate indicators of brain health, which include cognitive scores, memory questions, and taste and smell data, we found phthalate bioburden to be significantly higher in those with adverse brain health vii and significantly higher in females. In our logistic regression model when controlling for all known and suspected covariates in AD, in females, the phthalates in females ECP, MBP, MOH, MZP, and MIB in males and the phthalates COP, ECP, MBP, MC1, MEP, MHH, MOH, and MIB were significantly associated with poor cognitive test scores, poor memory, and taste and smell dysfunction. Among the metalloestrogens, Cd bioburden was higher in those with poor cognitive performance, poor memory, and taste and smell dysfunction, with the trend more significant in males. Among oral contraceptive (OC) and HRT (hormone replacement therapy) use, in our logistic regression model when controlling for all known and suspected covariates in AD, past OC and HRT use was associated with better cognitive test scores. The study provides further evidence of the complex role EEDCs play in overall brain health through other biological mechanisms and fills a gap in knowledge that demonstrates EEDCs effects on brain health in a geriatric age population.
33
Hunzeker, John T. "Differential effects of stress on the immune response to influenza A/PR8 virus infection in mice." Connect to this title online, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1080588837.
Анотація:
Thesis (Ph. D.)--Ohio State University, 2004.Title from first page of PDF file. Document formatted into pages; contains xvi, 231 p.; also includes graphics Includes bibliographical references (p. 211-231). Available online via OhioLINK's ETD Center
34
Hýbl, Matouš. "Dvoukanálový kontrolér krokových motorů." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442448.
Анотація:
Cílem této práce je vývoj dvoukanálového kontroléru krokových motorů. V rámci práce je popsán jak vývoj elektroniky, tak vývoj příslušného software. Elektronika kontrolŕu je založena na mikrokontroléru STM32F405 a driverů krokových motorů vyráběných firmou Trinamic. Pro komunikaci s nadřazenými systémy je implementován protokol CANOpen a sběrnice I\textsuperscript{2}C a USB. Elektronika byla navržena v software KiCAD and využívá čtyřvrstvého plošného spoje a moderních výrobních technologií. Co se týká software, byl vyvinut jak firmware pro mikrokontrolér, tak software pro ovládání kontroléru. Obě části software využívají programovacího jazyka Rust, který se zaměřuje na bezpečnost práce s pamětí, rychlost a zero-cost abstrakce. Sekundárním cílem této práce je ukázat, jak lze tento programovací jazyk s výhodou použít pro programování nízkoúrovňového embedded software. Firmware kontroléru implementuje nezávislé řízení pohybu obou os kontroléru a to jak v rychlostním, tak v pozičním režimu a zároveň implementuje bezpečnostní funkce pro případy selhání komunikace. Výsledný kontrolér by měl být použit v rámcí výzkumné skupiny Robotiky a Umělé Inteligence a studenty na Ústavu Automatizace FEKT VUT.
35
Liang, Kai-Min, and 梁凱閔. "Fast Booting on PCM-based Hybrid Main Memory." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/67136106489294152631.
36
Lu, Min-Zhong, and 呂敏中. "Row Buffer Management Policies in PCM Main Memory Systems." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/19824215718227175522.
Анотація:
碩士國立臺灣大學
資訊工程學研究所
100
As Moore’s Law continues to hold true, the number of concurrently running applications has been increasing, and the capacity requirement of main memory has been much aggravated. For recent years, researchers have been studying new memory technologies that are envisioned to provide more memory capacity and lower power than the conventional DRAM. Among them, phase-change memory (PCM) has been considered as the best candidate to replace DRAM as main memory due to its non-volatility, byte-addressability, and superior scalability. Nevertheless, there have still been a number of drawbacks of PCM that need to be addressed in order to enjoy the full benefit of it. For example, the write latency of PCM is much longer than that of DRAM, which often poses as a performance bottleneck for PCM-based main memory system. In this thesis, I extend one previous work that proposed the multiple narrow row buffer organization for PCM, which was reported to be effective in mitigating the relatively poor performance of PCM; I propose two row buffer management policies and two intra-bank parallelism schemes to exploit the full potential of such organization. Simulation shows that the proposed row buffer management policies bring an average of 2.27% and a maximum of 2.51% performance improvement, and that the proposed intra-bank parallelism schemes bring a maximum of additional 67.5% performance improvement for memory intensive workloads. Moreover, intra-bank parallelism schemes are observed to provide a maximum of 12% performance improvement for less memory intensive workloads.
37
Wu, Xiaojian. "Storage Systems for Non-volatile Memory Devices." Thesis, 2011. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9985.
Анотація:
This dissertation presents novel approaches to the use of non-volatile memory devices in building storage systems. There are many types of non-volatile memory devices, and they usually have better performance than regular magnetic hard disks in terms of throughput and latency. This dissertation focused on two of them, NAND flash memory and Phase Change Memory (PCM). This work consisted of two parts.
The first part was to design a high-performance hybrid storage system employing Solid State Drives that are build out of NAND flash memory and Hard Disk Drives. In this hybrid system, we proposed two different policies to improve its performance. One is to exploit the fact that the performances of Solid State Drive and Hard Disk Drive are asymmetric and the other is to exploit concurrency on multiple devices. We implemented prototypes in Linux and evaluate both policies in multiple workloads and multiple configurations. The results showed that the proposed approaches improve the performance significantly, and adapt to different configurations of the system under different workloads.
The second part was to implement a file system on a special class of memory devices, Storage Class Memory (SCM), which is both byte addressable and also nonvolatile, e.g. PCM. We claimed that both the existing regular file systems and the memory based file systems are not suitable for SCM, and proposed a new file system, called SCMFS, which is implemented on the virtual address space. In SCMFS, we utilized the existing memory management module in the operating system to do the block management. Our design keeps address space within a file contiguous to reduce the block management software. The simplicity of SCMFS not only makes it easy to implement, but also improves the performance. We implemented a prototype of SCMFS in Linux and evaluated its performance through multiple benchmarks.
38
Chang, Kuo-Lun, and 張國倫. "A Dynamic MLC/SLC Configuration for PCM in Main Memory System." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/m7y666.
Анотація:
碩士國立臺灣科技大學
電子工程系
107
In storage systems, non-volatile memory has become a popular technique in these years. The properties of non-volatile memory contain small size, low-power consumption and non-volatility. There are many types of non-volatile memory now. Phase change memory (PCM) is one of the most potential one among them. PCM is also considered as a candidate to replace DRAM in main memory. Compared to DRAM, it has the advantages of non-volatility and higher storage density. We can take advantage from the property of higher storage density by applying PCM in MLC format. However, MLC PCM has longer access time than SLC PCM. We need to have a trade-off method between capacity and speed. To make PCM a better candidate for main memory, we propose a dynamic MLC/SLC configuration for PCM in main memory system. According to the experimental results, we can show the performance and endurance improvement of the proposed method.
39
Cheng, Pi-Chieh, and 鄭比傑. "Adaptive Page Allocation and Buffer Management of DRAM-PCM Hybrid Memory Architecture." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/10109605237811085581.
Анотація:
碩士中原大學
資訊工程研究所
103
Owing to the advantages of non-volatility and low static energy consumption, Phase Change Random Access Memory (PCM or PCRAM) can become the mainstream memory device. However, it is a little bit of difficult that the PCM limited by endurance, high write-in power requirement and access latency want to replace Dynamic Random Access Memory (DRAM). Therefore, to obtain better performance, the development of memory device would tend to be built in the form of DRAM-PCM Hybrid Main Memory architecture. The configuration of the total device will be allocated by the front-end DRAM and the back-end PCM. The DRAM and the PCM are served as a flash memory and main memory, respectively. But, the hybrid device using small capacity DRAM cache will cause the higher miss rate in data access. In addition, the PCM part will increase the frequency of data access. Then, the hybrid device will show low efficiency and leakage power consumption. In this thesis, we will propose the adaptability page and buffering mechanism of DRAM-PCM Hybrid Memory architecture. While in the combing different chips, the difference of read-write feature, access latency, and access power consumption features between the hybrid chips would take into consideration and conduct Page Allocation Algorithm to adjust the capacity for the different Task to improve DRAM cache efficiency. According to the experiment results, our method can improve the efficiency of DRAM-PCM Hybrid Memory device and prolong its lifetime.
40
Garg, Vishesh. "Towards Designing PCM-Conscious Database Systems." Thesis, 2016. https://etd.iisc.ac.in/handle/2005/4889.
Анотація:
Phase Change Memory (PCM) is a recently developed non-volatile memory technology that
is expected to provide an attractive combination of the best features of conventional disks
(persistence, capacity) and of DRAM (access speed). For instance, it is about 2 to 4 times
denser than DRAM, while providing a DRAM-comparable read latency. On the other hand,
it consumes much less energy than magnetic hard disks while providing substantively smaller
write latency. Due to this suite of desirable features, PCM technology is expected to play a
prominent role in the next generation of computing systems, either augmenting or replacing
current components in the memory hierarchy. A limitation of PCM, however, is that there is
a significant difference between the read and write behaviors in terms of energy, latency and
bandwidth. A PCM write, for example, consumes 6 times more energy than a read. Further,
PCM has limited write endurance since a memory cell becomes unusable after the number of
writes to the cell exceeds a threshold determined by the underlying glass material.
Database systems, by virtue of dealing with enormous amounts of data, are expected to
be a prime beneficiary of this new technology. Accordingly, recent research has investigated
how database engines may be redesigned to suit DBMS deployments on PCM, covering areas
such as indexing techniques, logging mechanisms and query processing algorithms. Prior
database research has primarily focused on computing architectures wherein either a) PCM
completely replaces the DRAM memory ; or b) PCM and DRAM co-exist side-by-side and
are independently controlled by the software. However, a third option that is gaining favor in
the architecture community is where the PCM is augmented with a small hardware-managed
DRAM buffer. In this model, which we refer to as DRAM HARD, the address space of the
application maps to PCM, and the DRAM buffer can simply be visualized as yet another level
of the existing cache hierarchy. With most of the query processing research being preoccupied
with the first two models, this third model has remained largely ignored. Moreover, even in
this limited literature, the emphasis has been restricted to exploring execution-time strategies;
the compile-time plan selection process itself being left unaltered.
In this thesis, we propose minimalist reworkings of current implementations of database
operators, that are tuned to the DRAM HARD model, to make them PCM-conscious. We
also propose novel algorithms for compile-time query plan selection, thereby taking a holistic
approach to introducing PCM-compliance in present-day database systems. Specifically, our
contributions are two-fold, as outlined below.
First, we address the pragmatic goal of minimally altering current implementations of
database operators to make them PCM-conscious, the objective being to facilitate an easy transition
to the new technology. Specifically, we target the implementations of the \workhorse"
database operators: sort, hash join and group-by. Our customized algorithms and techniques
for each of these operators are designed to significantly reduce the number of writes while simultaneously
saving on execution times. For instance, in the case of sort operator, we perform
an in-place partitioning of input data into DRAM-sized chunks so that the subsequent sorting
of these chunks can finish inside the DRAM, consequently avoiding both intermediate writes
and their associated latency overheads.
Second, we redesign the query optimizer to suit the new environment of PCM. Each of the
new operator implementations is accompanied by simple but effective write estimators that
make these implementations suitable for incorporation in the optimizer. Current optimizers
typically choose plans using a latency-based costing mechanism assigning equal costs to both
read and write memory operations. The asymmetric read-write nature of PCM implies that
these models are no longer accurate. We therefore revise the cost models to make them cognizant
of this asymmetry by accounting for the additional latency during writes. Moreover, since the
number of writes is critical to the lifespan of a PCM device, a new metric of write cost is
introduced in the optimizer plan selection process, with its value being determined using the
above estimators.
Consequently, the query optimizer needs to select plans that simultaneously minimize query
writes and response times. We propose two solutions for handling this dual-objective optimization
problem. The first approach is a heuristic propagation algorithm that extends the widely
used dynamic programming plan propagation procedure to drastically reduce the exponential
search space of candidate plans. The algorithm uses the write costs of sub-plans at each of the
operator nodes to decide which of them can be selectively pruned from further consideration.
The second approach maps this optimization problem to the linear multiple-choice knapsack
problem, and uses its greedy solution to return the nal plan for execution. This plan is known
to be optimal within the set of non interesting-order plans in a single join order search space.
Moreover, it may contain a weighted execution of two algorithms for one of the operator nodes in
the plan tree. Therefore overall, while the greedy algorithm comes with optimality guarantees,
the heuristic approach is advantageous in terms of easier implementation.
The experimentation for our proposed techniques is conducted on Multi2sim, a state-of the-
art cycle-accurate simulator. Since it does not have native support for PCM, we made a
major extension to its existing memory module to model PCM device. Specifically, we added
separate data tracking functionality for the DRAM and PCM resident data, to implement the
commonly used read-before-write technique for PCM writes reduction. Similarly, modifications
were made to Multi2sim's timing subsystem to account for the asymmetric read-write latencies
of PCM. A new DRAM replacement policy called N-Chance, that has been shown to work well
for PCM-based hardware, was also introduced.
Our new techniques are evaluated on end-to-end TPC-H benchmark queries with regard to
the following metrics: number of writes, response times and wear distribution. The experimental
results indicate that, in comparison to their PCM-oblivious counterparts, the PCM-conscious
operators collectively reduce the number of writes by a factor of 2 to 3, while concurrently improving
the query response times by about 20% to 30%. When combined with the appropriate
plan choices, the improvements are even higher. In the case of Query 19, for instance, we obtained
a 64% savings in writes, while the response time came down to two-thirds of the original.
In essence, our algorithms provide both short-term and long-term benefits. These outcomes
augur well for database engines that wish to leverage the impending transition to PCM-based
computing.
41
Das, Chandasree. "Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications." Thesis, 2011. https://etd.iisc.ac.in/handle/2005/2378.
Анотація:
Chalcogenide glass based Phase Change Memories (PCMs) are being considered recently as promising alternatives to conventional non-volatile Random Access Memories (NVRAMs). PCMs offer high performance & low power consumption, in addition to other advantages, such as high scalability, high endurance and compatibility with complementary metal oxide semiconductors (CMOS) technologies. Basically PCM is a resistance variable non-volatile memory in which the memory bit state is defined by the resistance of the material. In this case, the initial ‘OFF’ state (logic zero) corresponds to the high resistance amorphous state and the logic 1 or ‘ON’ state corresponds to low resistance crystalline state.
The present thesis work deals with electrical, thermal, mechanical and optical characterization of certain tellurium based chalcogenide glasses in bulk and thin film form for phase change memory applications. A comparative study has been done on the electrical switching behavior of Ge-Te-Se & Ge-Te-Si amorphous thin film samples with their bulk counterparts. Further, electrical switching and thermal studies have been undertaken on bulk Ge-Te-Bi and Ge-Te-Sn series of samples. The composition dependence of switching voltages of bulk and thin film samples studied has been explained on the basis of different factors responsible for electrical switching. The thesis contains ten chapters:
Chapter 1 deals with a brief introduction on chalcogenides and their applicability in phase change memories. The glass transition phenomenon, synthesis of chalcogenide alloys, different structural models of amorphous semiconductors and electrical switching behavior are also discussed in detail in this chapter. Further, a brief description of optical and mechanical properties along with the principles of few characterization techniques used is discussed. Also, a brief overview on PCM application of chalcogenides is presented.
The second chapter provides the details of various experimental techniques used to measure electrical, thermal, optical and mechanical properties of few tellurium based chalcogenide glassy systems.
In the third chapter, the electrical switching behavior of amorphous Al23Te77 thin film devices, deposited in co-planar geometry, has been discussed. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. The switching behavior of thin film Al-Te samples is found to be similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region.
Electrical switching and thermal behavior of bulk; melt quenched Ge18Te82-xBix glasses (1 ≤ x ≤ 4) are presented in chapter 4. Ge-Te-Bi glasses have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of these samples. A linear variation in switching voltages (also known as threshold voltages) (Vt) has been found with increase in thickness. The switching voltages have been found to decrease with an increase in temperature which is due to the decrease in the activation energy for crystallization at higher temperatures. Further, Vt of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of Vt, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe and Bi2Te3 phases.
The fifth chapter deals with the electrical switching studies and optical band gap measurements on GexSe35-xTe65 (17 ≤ x ≤ 23) amorphous thin film samples. These thin film samples coated with sandwich geometry are found to switch with very low voltages as compared to bulk samples of the same chalcogenide glasses. The switching voltages and optical band gap are found to increase with the addition of Ge at the expense of Se. High structural cross linking with progressive addition of 4-fold coordinated Ge atoms could be the one of the reasons of increasing switching voltage and stronger Ge-Se bond strength could be the reason of increasing band gap for these chalcogenide glasses.
In chapter 6, electrical switching studies on amorphous Ge15Te85-xSix (1 ≤ x ≤ 6) thin film samples have been described and the results are compared with their bulk counterparts. Similar trend has been found for both bulk and film samples when the threshold field is varied with composition. Optical band gap has been measured as a function of composition for these films, which also shows a behavior similar to that of switching voltages. The increasing trend in the variation with composition of electrical switching voltages and optical band gap are due to the increase in network connectivity and rigidity as Si atoms are incorporated into the Ge-Te system.
Chapter 7 summarizes the electrical switching and glass forming ability of the Ge-Te-Sn glasses of two different composition tie-lines, namely Ge15Te85-xSnx and Ge17Te83-xSnx. Glasses belonging to both the series have been found to exhibit memory type of electrical switching behavior. The thickness dependence of threshold voltages is also found to support the memory switching behavior of the system. Further, ADSC studies are undertaken to explore the thermal behavior of these glasses which indicates that the crystallization tendency increases as Sn concentration is increased in the Ge-Te network. XRD studies done on two samples from both the series, reveal the fact that Sn atoms do not take part actively to enhance the network connectivity and rigidity. The composition dependence of crystallization temperature, metallicity factor and results of XRD studies are put together to explain the variation with composition of threshold voltages for both the series of samples.
In chapter 8, investigations on the electrical switching behavior of Ge15Te85-xSnx (1 ≤ x ≤ 5) and Ge17Te83-xSnx (1 ≤ x ≤ 4) amorphous thin films have been discussed. Both the series of samples have been found to exhibit memory type of electrical switching behavior. The composition dependence of threshold voltage shows a decreasing trend, which has been explained on the basis of the Chemically Ordered Network (CON) model, bond strength and the metallicity factor. The optical band gap variation of both the series also exhibits a similar decreasing trend with composition. The observed behavior has been understood on the basis of higher atomic radius of Sn atom than Ge atom, which makes the energy difference between bonding and anti bonding state less at band edge.
Chapter 9 deals with the nano-indentation studies on Ge15Te85-xSix (0 ≤ x ≤ 9) bulk glasses. The composition dependence of young’s modulus and hardness is studied systematically in this glassy system. The density of the samples of different compositions has also been measured, which strongly supports the variation of Young’s Modulus and hardness with composition. The composition dependence of mechanical properties of Ge-Te-Si samples has been understood on the basis of the presence of an intermediate phase and a thermally reversing window in this glassy system.
A summary of the significant results obtained in the present thesis work is presented in the last chapter along with the scope for future work.
42
Das, Chandasree. "Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications." Thesis, 2011. http://etd.iisc.ernet.in/handle/2005/2378.
Анотація:
Chalcogenide glass based Phase Change Memories (PCMs) are being considered recently as promising alternatives to conventional non-volatile Random Access Memories (NVRAMs). PCMs offer high performance & low power consumption, in addition to other advantages, such as high scalability, high endurance and compatibility with complementary metal oxide semiconductors (CMOS) technologies. Basically PCM is a resistance variable non-volatile memory in which the memory bit state is defined by the resistance of the material. In this case, the initial ‘OFF’ state (logic zero) corresponds to the high resistance amorphous state and the logic 1 or ‘ON’ state corresponds to low resistance crystalline state.
The present thesis work deals with electrical, thermal, mechanical and optical characterization of certain tellurium based chalcogenide glasses in bulk and thin film form for phase change memory applications. A comparative study has been done on the electrical switching behavior of Ge-Te-Se & Ge-Te-Si amorphous thin film samples with their bulk counterparts. Further, electrical switching and thermal studies have been undertaken on bulk Ge-Te-Bi and Ge-Te-Sn series of samples. The composition dependence of switching voltages of bulk and thin film samples studied has been explained on the basis of different factors responsible for electrical switching. The thesis contains ten chapters:
Chapter 1 deals with a brief introduction on chalcogenides and their applicability in phase change memories. The glass transition phenomenon, synthesis of chalcogenide alloys, different structural models of amorphous semiconductors and electrical switching behavior are also discussed in detail in this chapter. Further, a brief description of optical and mechanical properties along with the principles of few characterization techniques used is discussed. Also, a brief overview on PCM application of chalcogenides is presented.
The second chapter provides the details of various experimental techniques used to measure electrical, thermal, optical and mechanical properties of few tellurium based chalcogenide glassy systems.
In the third chapter, the electrical switching behavior of amorphous Al23Te77 thin film devices, deposited in co-planar geometry, has been discussed. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. The switching behavior of thin film Al-Te samples is found to be similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region.
Electrical switching and thermal behavior of bulk; melt quenched Ge18Te82-xBix glasses (1 ≤ x ≤ 4) are presented in chapter 4. Ge-Te-Bi glasses have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of these samples. A linear variation in switching voltages (also known as threshold voltages) (Vt) has been found with increase in thickness. The switching voltages have been found to decrease with an increase in temperature which is due to the decrease in the activation energy for crystallization at higher temperatures. Further, Vt of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of Vt, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe and Bi2Te3 phases.
The fifth chapter deals with the electrical switching studies and optical band gap measurements on GexSe35-xTe65 (17 ≤ x ≤ 23) amorphous thin film samples. These thin film samples coated with sandwich geometry are found to switch with very low voltages as compared to bulk samples of the same chalcogenide glasses. The switching voltages and optical band gap are found to increase with the addition of Ge at the expense of Se. High structural cross linking with progressive addition of 4-fold coordinated Ge atoms could be the one of the reasons of increasing switching voltage and stronger Ge-Se bond strength could be the reason of increasing band gap for these chalcogenide glasses.
In chapter 6, electrical switching studies on amorphous Ge15Te85-xSix (1 ≤ x ≤ 6) thin film samples have been described and the results are compared with their bulk counterparts. Similar trend has been found for both bulk and film samples when the threshold field is varied with composition. Optical band gap has been measured as a function of composition for these films, which also shows a behavior similar to that of switching voltages. The increasing trend in the variation with composition of electrical switching voltages and optical band gap are due to the increase in network connectivity and rigidity as Si atoms are incorporated into the Ge-Te system.
Chapter 7 summarizes the electrical switching and glass forming ability of the Ge-Te-Sn glasses of two different composition tie-lines, namely Ge15Te85-xSnx and Ge17Te83-xSnx. Glasses belonging to both the series have been found to exhibit memory type of electrical switching behavior. The thickness dependence of threshold voltages is also found to support the memory switching behavior of the system. Further, ADSC studies are undertaken to explore the thermal behavior of these glasses which indicates that the crystallization tendency increases as Sn concentration is increased in the Ge-Te network. XRD studies done on two samples from both the series, reveal the fact that Sn atoms do not take part actively to enhance the network connectivity and rigidity. The composition dependence of crystallization temperature, metallicity factor and results of XRD studies are put together to explain the variation with composition of threshold voltages for both the series of samples.
In chapter 8, investigations on the electrical switching behavior of Ge15Te85-xSnx (1 ≤ x ≤ 5) and Ge17Te83-xSnx (1 ≤ x ≤ 4) amorphous thin films have been discussed. Both the series of samples have been found to exhibit memory type of electrical switching behavior. The composition dependence of threshold voltage shows a decreasing trend, which has been explained on the basis of the Chemically Ordered Network (CON) model, bond strength and the metallicity factor. The optical band gap variation of both the series also exhibits a similar decreasing trend with composition. The observed behavior has been understood on the basis of higher atomic radius of Sn atom than Ge atom, which makes the energy difference between bonding and anti bonding state less at band edge.
Chapter 9 deals with the nano-indentation studies on Ge15Te85-xSix (0 ≤ x ≤ 9) bulk glasses. The composition dependence of young’s modulus and hardness is studied systematically in this glassy system. The density of the samples of different compositions has also been measured, which strongly supports the variation of Young’s Modulus and hardness with composition. The composition dependence of mechanical properties of Ge-Te-Si samples has been understood on the basis of the presence of an intermediate phase and a thermally reversing window in this glassy system.
A summary of the significant results obtained in the present thesis work is presented in the last chapter along with the scope for future work.
43
Νάκος, Κωνσταντίνος. "Διόρθωση λαθών σε συστήματα αποθήκευσης πληροφορίας τεχνολογίας PCM με χρήση κώδικα BCH". Thesis, 2013. http://hdl.handle.net/10889/6113.
Анотація:
Αντικείμενο της διπλωματικής εργασίας αποτελεί η μελέτη και ανάλυση των μεθόδων διόρθωσης λαθών με χρήση κώδικα BCH που μπορούν να εφαρμοστούν σε συστήματα αποθήκευσης πληροφορίας τεχνολογίας PCM (Phase-Change Memory). Η τεχνολογία PCM αποτελεί μία νέα τεχνολογία που υπόσχεται υψηλές χωρητικότητες, χαμηλή κατανάλωση ισχύος και μπορεί να εφαρμοστεί είτε σε συσκευές αποθήκευσης σταθερής κατάστασης (Solid State Drives) είτε σε μνήμες τυχαίας προσπέλασης (Random-Access Memories), παρέχοντας μία εναλλακτική πρόταση έναντι μνημών τεχνολογίας flash και DRAM. Ένα από τα μειονεκτήματα της τεχνολογίας PCM είναι η ανθεκτικότητα εγγραφής (write endurance), η οποία μπορεί να βελτιωθεί με τη χρήση μεθόδων διόρθωσης λαθών που θα παρατείνουν τον χρόνο ζωής της συσκευής όταν, λόγω της φυσικής φθοράς του μέσου, αρχίσουν να υπάρχουν σφάλματα στα αποθηκευμένα δεδομένα. Για την εφαρμογή της διόρθωσης λαθών μπορούν να χρησιμοποιηθούν κώδικες BCH, οι οποίοι αποτελούν μια κλάση ισχυρών κυκλικών κωδίκων διόρθωσης τυχαίων λαθών, και κατασκευάζονται με χρήση της άλγεβρας πεπερασμένων πεδίων. Οι κώδικες BCH είναι ιδανικοί για διόρθωση λαθών σε συσκευές αποθήκευσης πληροφορίας όπου η κατανομή των λαθών είναι τυχαία. Αρκετοί αλγόριθμοι έχουν προταθεί για τις λειτουργίες αποδοτικής κωδικοποίησης και αποκωδικοποίησης κωδίκων BCH. Στην παρούσα εργασία μελετήθηκαν λύσεις που μπορούν να υλοποιηθούν με παράλληλες αρχιτεκτονικές, ενώ ειδικότερα για την λειτουργία αποκωδικοποίησης έγινε χρήση ενός παράλληλου αλγορίθμου που δεν χρειάζεται αντιστροφείς πεπερασμένου πεδίου για την επίλυση των εξισώσεων των συνδρόμων, επιτυγχάνοντας υψηλές συχνότητες λειτουργίας. Για την κατανόηση των λειτουργιών κωδικοποίησης και αποκωδικοποίησης απαιτείται η προσεκτική μελέτη της άλγεβρας πεπερασμένων πεδίων και της αριθμητικής της. Οι κώδικες BCH προσφέρουν πλεονεκτήματα όπως χαμηλή πολυπλοκότητα και ύπαρξη αποδοτικών μονάδων υλοποίησης σε υλικό.
Στην παρούσα εργασία σχεδιάστηκαν ένας παράλληλος κωδικοποιητής και ένας παράλληλος αποκωδικοποιητής για τον κώδικα BCH(728,688). Τα δύο συστήματα υλοποιήθηκαν ως περιφερειακά σε ενσωματωμένο σύστημα βασισμένο σε επεξεργαστή MicroBlaze, με έμφαση σε μια καλή σχέση μεταξύ της συχνότητας λειτουργίας και των απαιτήσεων σε επιφάνεια υλικού και κατανάλωση ισχύος. Για την υλοποίηση χρησιμοποιήθηκε συσκευή FPGA σειράς Virtex-6.The objective of this thesis is the study and analysis of BCH error-correction methods that can be applied on PCM (Phase-Change Memory) storage devices. PCM is a new technology that promises high capacities, low power consumption and can be applied either on Solid State Drives or on Random Access Memories, providing an alternative to flash and DRAM memories. However, PCM suffers from limited write endurance, which can be increased using error-correction schemes that will extend the lifetime of the device when, due to medium wear-out, errors start to appear in the written data. Thus, BCH codes (powerful cyclic random multiple error-correcting codes) can be employed. BCH codes are ideal for ECC (Error-Correction Coding) in storage devices, due to their fault model which is random noise. Several algorithms have been proposed for the efficient coding and decoding BCH codes. In the present thesis parallel implementations where studied. For the decoding process in particular, a parallel algorithm was used that does not require finite field inverter units to solve the syndrome equations, achieving high operation frequencies. For the understanding of BCH coding and decoding processes, basic knowledge of the finite field algebra and arithmetic is required. BCH codes offer advantages such as low complexity and efficient hardware implementations. In the present thesis a parallel BCH(728,688) encoder and a parallel BCH(728,688) decoder were designed. The above systems were implemented as peripherals on an MicroBlaze-based embedded system, with emphasis on an optimal tradeoff between area and power consumption. A Virtex-6 FPGA device was used for the final stages of the implementation.
44
Προδρομάκης, Αντώνιος. "Μοντελοποίηση και εξομοίωση των χαρακτηριστικών γήρανσης NV μνημών". Thesis, 2015. http://hdl.handle.net/10889/8815.
Анотація:
Τις τελευταίες δεκαετίες, η ανάπτυξη των non-volatile μνημών (NVMs) κατέστησε ικανή την αντικατάσταση volatile μνημών, όπως των DRAMs και των μαγνητικών σκληρών δίσκων (HDDs), σε caching και storage εφαρμογές, αντίστοιχα. Οι δίσκοι στερεάς κατάστασης (SSDs) που βασίζονται σε NAND Flash μνήμες έχουν ήδη αναδειχθεί ως ένα χαμηλού κόστους, υψηλής απόδοσης και αξιόπιστο μέσο στα σύγχρονα συστήματα αποθήκευσης. Επιπλέον, οι ιδιότητες των υλικών αλλαγής φάσης και η πρόσφατη κλιμάκωση της Phase-Change μνήμης (PCM), την καθιστά ένα τέλειο υποψήφιο για την ανάπτυξη μνημών τυχαίας προσπέλασης αλλαγής φάσης (PCRAMs).
Η ραγδαία κλιμάκωση των NVMs, με διαδικασίες ολοκλήρωσης κάτω από 19nm, και η χρήση της multi-level cell (MLC) τεχνολογίας συνέβαλλαν στην αύξηση της πυκνότητας αποθήκευσης πληροφορίας και συνεπώς μείωσαν το κόστος αποθήκευσης δραματικά. Ωστόσο, η διάρκεια ζωής των NV μνημών δεν παρέμεινε ανεπηρέαστη. Διαφορετικές παρεμβολές και πηγές θορύβου σε συνδυασμό με την επίδραση της γήρανσης έχουν ένα μεγάλο αντίκτυπο στην αξιοπιστία και την αντοχή αυτών των τεχνολογιών μνήμης, και ως εκ τούτου, των συστημάτων αποθήκευσης στα οποία χρησιμοποιούνται (SSDs, PCRAMs). Πολλές μέθοδοι και τεχνικές, όπως η μέθοδος wear-leveling, εξειδικευμένοι κώδικες ανίχνευσης και διόρθωσης λαθών (ECC) και τεχνικές pre-coding έχουν χρησιμοποιηθεί για να αντισταθμίσουν αυτές τις επιπτώσεις, ενώ άλλες, πιο περίπλοκες μεν, αλλά και πιο αποτελεσματικές, όπως η δυναμική προσαρμογή των κατωφλίων ανάγνωσης, βρίσκονται σε πειραματικό στάδιο.
Η ανάπτυξη αυτών των τεχνικών βασίζεται στον πειραματικό χαρακτηρισμό των NV μνημών, τόσο σε επίπεδο κελιού όσο και σε επίπεδο ολοκληρωμένου κυκλώματος. Ο χαρακτηρισμός αυτός σχετίζεται με την μέτρηση του λόγου του αριθμού των bit σφαλμάτων προς τον αριθμό των συνολικών bits (BER) και το χρόνο απόκρισης (ανάγνωσης και εγγραφής) καθ' όλη τη διάρκεια ζωής της μνήμης, για διάφορες μορφές δεδομένων και σενάρια χρονισμών. Η διαδικασία αυτή, μέχρι τώρα, γίνεται με τη χρήση της πραγματικής NV μνήμης, συνήθως με ολοκληρωμένα κυκλώματα που βρίσκονται στο στάδιο της προ-παραγωγής, ενώ πιο ενδελεχής έλεγχος γίνεται στο τελικό στάδιο της παραγωγής. Αυτή η προσέγγιση έχει δύο σημαντικά μειονεκτήματα. Από τη μία πλευρά, είναι μια πολύ χρονοβόρα διαδικασία, δεδομένου ότι η γήρανση μίας NVM μπορεί να απαιτεί ένα μεγάλο αριθμό από program / erase (P/E) κύκλους που πρέπει να εκτελεστούν για κάθε πείραμα. Ο αριθμός αυτός κυμαίνεται από κάποιες δεκάδες χιλιάδες (NAND Flash) έως και κάποια εκατομμύρια κύκλους (PCM). Από την άλλη πλευρά, τα χαρακτηριστικά γήρανσης μίας NVM είναι αναλόγως εξαρτώμενα από τον αριθμό των Ρ/Ε κύκλων που εκτελούνται, καθιστώντας έτσι αδύνατη την διεξαγωγή διαφορετικών ή διαδοχικών πειραμάτων στην ίδια κατάσταση γήρανσης της μνήμης.
Σε αυτή την εργασία παρουσιάζουμε ένα μοντέλο που αντιπροσωπεύει με ακρίβεια τη διαδικασία γήρανσης NV μνημών, αντιμετωπίζοντας τες ως ένα χρονικά μεταβαλλόμενο κανάλι επικοινωνίας βασισμένο σε ένα μη συμμετρικό n-PAM μοντέλο. Με βάση τη μοντελοποίηση των χαρακτηριστικών γήρανσης, υλοποιούμε ένα σύστημα εξομοίωσης σε πραγματικό χρόνο και με μεγάλη ακρίβεια της συμπεριφοράς NV-μνημών, κάτω από ορισμένες από το χρήστη συνθήκες γήρανσης, σε τεχνολογία FPGA. Η πλατφόρμα που παρουσιάζεται στην παρούσα εργασία βασίζεται σε μια αναπροσαρμόσιμη αρχιτεκτονική υλικού και λογισμικού που επιτρέπει την ακριβή εξομοίωση των νέων και αναδυόμενων τεχνολογιών και μοντέλων των NVMs. Η πλατφόρμα που αναπτύχθηκε μπορεί να αποτελέσει ένα πολύτιμο εργαλείο για την ανάπτυξη και αξιολόγηση αλγορίθμων και τεχνικών κωδικοποίησης.Over the last few years, non-volatle memory (NVM) has shown a great potential in replacing volatile memory, like DRAM in caching applications, and magnetic HDDs in storage applications. NAND Flash-based solid state drives (SSDs) have already emerged as a low-cost, high-performance and reliable storage medium for both commercial and enterprise storage systems. Additionally, the properties of phase-change materials and the recent scaling of Phase-Change Memory (PCM) has made it a perfect candidate for developing phase-change random access memories (PCRAMs). The rapid scaling of NVMs, with process nodes below 19nm, and the use of multi-level cell (MLC) technologies has increased their storage density and reduced the storage cost per bit. However, their lifetime capacity has not remained unaffected. Different interferences and noise sources along with aging effects have now a great impact on the reliability and endurance of these memory technologies, and hence, on the storage systems where these memories are used (SSDs, PCRAMs). Numerous techniques, such as wear-leveling, specialized error correcting codes (ECC) and precoding techniques have been employed to compensate these effects, while others, more complex but also more efficient, like dynamic adaptation of read reference thresholds, are at an experimental level. The development of these techniques is based on experimental characterization of NVM cells and chips. Characterization is related with measuring bit error ratio (BER) and response time (read and write time) during the whole lifetime of a device, for various loading data patterns and timing scenarios. This process is performed using real NVM integrated chips, usually the engineering, pre-production parts, while more thorough testing at the system level is performed when production parts are available. This approach has two major drawbacks. On one hand it is a very time-consuming process, since the aging of an NVM may require a large number of program/erase (P/E) cycles to be performed for each experiment, ranging from tens of thousands (NAND Flash) to millions (PCM) program cycles. On the other hand, the aging characteristics of an NVM are proportionally dependent on the number of the performed P/E cycles, thus making it impossible to conduct different or successive experiments at the same aging state of a memory chip. In this work, we present a model that accurately represents the aging process of an NVM cell, by treating it as a time-variant communications channel, based on an asymmetric n-PAM model. We present the architecture of a flexible FPGA-based platform, designed for accurate emulations of NVM technologies, focusing mainly on MLC NAND Flash technologies. Accuracy is measured in reference to experimentally specified bit error probabilities for various aging conditions (ie. the number of P/E cycles applied to a NAND Flash chip), usually for random data patterns. The hardware platform presented in this work is based on a reconfigurable hardware-software architecture, which enables the accurate emulation of new and emerging models and technologies of NVMs. The developed platform can be a valuable tool for the evaluation of memory-related algorithms, signal processing and coding techniques.
45
Sreevidya, Varma G. "Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications." Thesis, 2014. http://etd.iisc.ac.in/handle/2005/3080.
Анотація:
The Science behind amorphous Chalcogenide materials opened up new technologies in the arena of Phase Change Memories. The Ovonic universal phase change memory is called universal because it can replace flash memory, DRAM and SRAM. These are not only basic computer memory devices but also are becoming the driving force for the ongoing revolutionary growth of cell phones and other mobile devices, which are in desperate need of memory providing higher density, faster speed and lower power consumption.
In this thesis, compositional dependence of various properties of different chalcogenide glasses are investigated, to explore the possibility of their application in Phase Change Memories. Efforts are also made to understand the effect of rigidity and extended rigidity transition on the composition dependence of properties investigated. This thesis comprises of 9 chapters; a brief summary is given below.
Chapter 1 deals with fundamental aspects of amorphous semiconductors with a particular reference to chalcogenide glasses. The advantages and applications of chalcogenide glasses are also described.
Chapter 2 outlines preparation and characterization of the glasses investigated. The sample preparation and various experimental setup used in the present thesis work like Raman Scattering, Nanoindentation, Alternating Differential Scanning Calorimetry (ADSC), Photo-thermal Deflection Spectroscopy (PDS), Electrical Switching are summarized here.
Chapter 3 deals with Micro-Raman studies in Ge15Te85-x Inx Glasses. Micro-Raman studies reveal that as-quenched Ge15Te85-xInx samples exhibit two prominent peaks, at 123 and 155 cm-1. In thermally annealed samples, the peaks at 120 cm-1 and 140 cm-1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm-1 and 141 cm-1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-ageing and are more stable.
Chapter 4 explains nanoindentation studies undertaken on Ge15Te85-xInx glasse (1 ≤ x ≤ 11). Nanoindentation studies on Ge15Te85-xInx glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge15Te85-xInx glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system.
Chapter 5 deals with crystallization kinetics of Ge15Te85-xInx glasses. The crystallization kinetics of Ge15Te85Inx glasses have been studied by non-isothermal method. The composition dependence of Tg and Tc at different heating rates, is investigated. The activation energy of crystallization is calculated using the Kissinger’s plot. It is found that the composition dependence of the glass transition temperature, Tg and the crystallization temperature, Tc, the activation energy of crystallization, Ec, and the stability factor, (ΔT= Tc-Tg) exhibit specific signatures of intermediate phase in the composition rang 3 ≤ x ≤ 7 and Chemical Threshold at x = 9.
Chapter 6 explains Alternating Differential Scanning Calorimetric and XRD studies on silver doped Ge15Te80In5 glasses. X-ray diffraction studies on quaternary Ge15Te80-xIn5Agx glasses (2 ≤ x ≤ 24) reveal the presence of Te, GeTe, Ag8GeTe6, AgTe, In2Te3 and In4Te3. Thermal studies on quaternary Ge15Te80-xIn5Agx glasses exhibit signatures of Intermediate Phase (IP) in the variation of Tg, ∆HNR and ∆Cp with Ag addition in the composition range 8 ≤ x ≤ 16. The composition x = 16 has been identified to be the Chemical Threshold (CT) based on the saturation of flexible Ag-Te bonds. Micro-Raman, molar volume, thermal diffusivity studies on Ge15Te80-xIn5Agx glasses reveal a clear evidence of intermediate phase in the composition range 8 ≤ x ≤ 16 as depicted in the ADSC studies.
Chapter 7 deals with Micro-Raman studies on as-quenched Ge15Te80-xIn5Agx glasses reveal the presence of tetrahedral structural units. Further, the Raman peak positions are found to shift with silver addition. In addition, specific signatures of the Intermediate Phase (IP) are observed in the composition dependence of Raman frequencies and corresponding intensities of different modes in the composition range, 8 ≤ x ≤ 16. In thermally annealed samples, the observed Raman peaks can be attributed to crystalline tellurium and silver lattice vibrational modes; significant increase in intensity is observed at 93 and 141cm-1 with silver addition in annealed samples, suggesting an increase in silver lattice vibrational modes. Also, the compositional dependence of density, molar volume and thermal diffusivity confirms the presence of the intermediate phase.
Chapter 8 contains the current-voltage characteristics and electrical switching behavior of Ge15Te80-xIn5Agx glasses. The glasses are found to exhibit memory type switching for 3mA current in the voltage range 70 -120 V, for a sample thickness 0.3 mm. But when the current is lowered to 1mA the samples exhibit threshold switching. The compositional studies indicate the presence of an intermediate phase in the composition range 8 ≤ x ≤ 16. SET-RESET studies have been carried out using a triangular pulse of 6 mA amplitude for SET and 21 mA amplitude for RESET for a sample thickness 0.3 mm. Raman studies on SET and RESET indicates SET state resemble annealed samples and RESET state resemble as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x =10, 12, 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are suitable for PCM devices.
Chapter 9 summarizes the significant results obtained and explains the scope of this thesis.
46
Sreevidya, Varma G. "Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications." Thesis, 2014. http://hdl.handle.net/2005/3080.
Анотація:
The Science behind amorphous Chalcogenide materials opened up new technologies in the arena of Phase Change Memories. The Ovonic universal phase change memory is called universal because it can replace flash memory, DRAM and SRAM. These are not only basic computer memory devices but also are becoming the driving force for the ongoing revolutionary growth of cell phones and other mobile devices, which are in desperate need of memory providing higher density, faster speed and lower power consumption.
In this thesis, compositional dependence of various properties of different chalcogenide glasses are investigated, to explore the possibility of their application in Phase Change Memories. Efforts are also made to understand the effect of rigidity and extended rigidity transition on the composition dependence of properties investigated. This thesis comprises of 9 chapters; a brief summary is given below.
Chapter 1 deals with fundamental aspects of amorphous semiconductors with a particular reference to chalcogenide glasses. The advantages and applications of chalcogenide glasses are also described.
Chapter 2 outlines preparation and characterization of the glasses investigated. The sample preparation and various experimental setup used in the present thesis work like Raman Scattering, Nanoindentation, Alternating Differential Scanning Calorimetry (ADSC), Photo-thermal Deflection Spectroscopy (PDS), Electrical Switching are summarized here.
Chapter 3 deals with Micro-Raman studies in Ge15Te85-x Inx Glasses. Micro-Raman studies reveal that as-quenched Ge15Te85-xInx samples exhibit two prominent peaks, at 123 and 155 cm-1. In thermally annealed samples, the peaks at 120 cm-1 and 140 cm-1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm-1 and 141 cm-1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-ageing and are more stable.
Chapter 4 explains nanoindentation studies undertaken on Ge15Te85-xInx glasse (1 ≤ x ≤ 11). Nanoindentation studies on Ge15Te85-xInx glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge15Te85-xInx glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system.
Chapter 5 deals with crystallization kinetics of Ge15Te85-xInx glasses. The crystallization kinetics of Ge15Te85Inx glasses have been studied by non-isothermal method. The composition dependence of Tg and Tc at different heating rates, is investigated. The activation energy of crystallization is calculated using the Kissinger’s plot. It is found that the composition dependence of the glass transition temperature, Tg and the crystallization temperature, Tc, the activation energy of crystallization, Ec, and the stability factor, (ΔT= Tc-Tg) exhibit specific signatures of intermediate phase in the composition rang 3 ≤ x ≤ 7 and Chemical Threshold at x = 9.
Chapter 6 explains Alternating Differential Scanning Calorimetric and XRD studies on silver doped Ge15Te80In5 glasses. X-ray diffraction studies on quaternary Ge15Te80-xIn5Agx glasses (2 ≤ x ≤ 24) reveal the presence of Te, GeTe, Ag8GeTe6, AgTe, In2Te3 and In4Te3. Thermal studies on quaternary Ge15Te80-xIn5Agx glasses exhibit signatures of Intermediate Phase (IP) in the variation of Tg, ∆HNR and ∆Cp with Ag addition in the composition range 8 ≤ x ≤ 16. The composition x = 16 has been identified to be the Chemical Threshold (CT) based on the saturation of flexible Ag-Te bonds. Micro-Raman, molar volume, thermal diffusivity studies on Ge15Te80-xIn5Agx glasses reveal a clear evidence of intermediate phase in the composition range 8 ≤ x ≤ 16 as depicted in the ADSC studies.
Chapter 7 deals with Micro-Raman studies on as-quenched Ge15Te80-xIn5Agx glasses reveal the presence of tetrahedral structural units. Further, the Raman peak positions are found to shift with silver addition. In addition, specific signatures of the Intermediate Phase (IP) are observed in the composition dependence of Raman frequencies and corresponding intensities of different modes in the composition range, 8 ≤ x ≤ 16. In thermally annealed samples, the observed Raman peaks can be attributed to crystalline tellurium and silver lattice vibrational modes; significant increase in intensity is observed at 93 and 141cm-1 with silver addition in annealed samples, suggesting an increase in silver lattice vibrational modes. Also, the compositional dependence of density, molar volume and thermal diffusivity confirms the presence of the intermediate phase.
Chapter 8 contains the current-voltage characteristics and electrical switching behavior of Ge15Te80-xIn5Agx glasses. The glasses are found to exhibit memory type switching for 3mA current in the voltage range 70 -120 V, for a sample thickness 0.3 mm. But when the current is lowered to 1mA the samples exhibit threshold switching. The compositional studies indicate the presence of an intermediate phase in the composition range 8 ≤ x ≤ 16. SET-RESET studies have been carried out using a triangular pulse of 6 mA amplitude for SET and 21 mA amplitude for RESET for a sample thickness 0.3 mm. Raman studies on SET and RESET indicates SET state resemble annealed samples and RESET state resemble as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x =10, 12, 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are suitable for PCM devices.
Chapter 9 summarizes the significant results obtained and explains the scope of this thesis.
47
Liao, Chien-Mao, and 廖建茂. "PCA Based Control Charts with Memory Effect for Process Monitoring." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/70646533593825170230.
Анотація:
碩士中原大學
化學工程學系
88
A general learning methodology based on PCA (Principal component analysis) control charts with memory effect for steady-state and dynamic process monitoring is proposed. PCA is currently a standard multivariate statistical technique. It has been applied to a lot of monitoring problems in chemical processes. However, the PCA model cannot explain the trend relationship among the measured variables with a small or a moderate shift in one or more process variables because it is built only based on the most recent observations. On the other hand, multivariate control charts, like MEWMA, MCUSUM, and SSUM etc, use additional information from the past history of the process, so the models possess the memory effect of the process behavior trend. Naturally, combining the PCA model with the above methods is a logical extension of the standard PCA model. In steady-state process monitoring, the combination method is developed and compared with the traditional PCA in terms of the mathematical definitions. In dynamic process monitoring, a technique combined with the neural network and PCA is proposed. The neural network is used to model the nonlinear dynamic system. The actual behavior of the process to be supervised is compared with that of a nominal fault-free neural network model driven by the same observations. The PCA based control charts evaluate the multivariable residuals driven from the differences between these outputs. This shows how static PCA can be applied on the dynamic system. The complementary of the proposed method not only leads to some cross-fertilization between various techniques but also results in a better model. Finally, the effectiveness of the proposed method for steady-state and dynamic process monitoring is demonstrated through the simulated Tennessee Eastman process problem and real industrial case studies - a melting process in a glaze industry and surface quality in a stainless steel slab to indicate the potential applications.
48
Wang, Xue-Fen, and 王雪芬. "Preparation of Shape Memory OBC/PCL Melt-Blends and Nanocomposites." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/jm76nq.
Анотація:
碩士國立宜蘭大學
化學工程與材料工程學系碩士班
102
Olefin block copolymer (OBC) and polycaprolactone (PCL) were melt-blended to form green shape memory blends. The shape memory behaviors of OBC/PCL blends were investigated at 60/40 proportions. Due to the lack of good compatibility between OBC and PCL, OBC-g-GMA (Glycidyl Methacrylate, GMA) and dicumyl peroxide (DCP) were added to improve the compatibility. In addition, ZnO with different aspect ratios were added to investigate their shape memory effect. The SEM technique confirmed the improved compatibility between OBC and PCL after modification. The crystallization temperatures of OBC/PCL blends with modification slightly increased, but the melting temperatures were not varied much. Viscosity of OBC/PCL-D (peroxide modified) and OBC/OBC-g-GMA/PCL-D blends was higher than that of OBC/PCL and OBC/OBC-g-GMA/PCL blends. XRD (X-Ray Diffractometer) confirmed the crystal structure of hexagonal wurtzite ZnO. TGA showed that thermal stability of OBC/PCL blends increased 35.4 oC with the addition of ZnO. From UV (UV-visible absorption spectra) measurement, ZnO-filled OBC/PCL blends exhibited high UV absorption capability. For the shape memory test, OBC/OBC-g-GMA/PCL-D blends exhibited better shape memory effect in comparison with the unmodified blends at the predeformation temperature of 65 oC. Its’ shape fixing ratio (Rf) and the shape recovery ratio (Rr) were up to 96.7 % and 95.7 %, respectively. In recovery stress, the recovery stress peak temperature basically corresponded to the predeformation temperature, suggesting a unique “memory” effect. Through the stress relaxation process for holding 10 minutes before cooling the samples, Rf of OBC/PCL blends without DCP modification was improved, up to 96.9 %. With new pre-cycle training processes at different temperatures, Rr of OBC/PCL blends with or without modification reached 100 % even after three shape memory cycles. Finally, Rf of OBC/PCL blends with the addition of ZnO was higher than OBC/PCL blends without ZnO.
49
Lai, Ting-Yin, and 賴亭茵. "Preparation of ZnO Nanorods and Shape Memory OBC/PCL/Silicone Blends." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/brs25c.
Анотація:
碩士國立宜蘭大學
化學工程與材料工程學系碩士班
103
Zinc oxide synthesized with two different sol-gol methods. Firstly, put zinc nitrate solution (Zn(NO3)2), PEG-b-PPG-b-PEG (poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol)) and NH3OH (ammonium hydroxide solution) into a 250 mL beaker, heated to 65 oC until 1/3 solution left. Vigorous stirring was maintained throughout the entire process, and then calcinating the white powder at 600 oC. Secondly, zinc nitrate aqueous solution (Zn(NO3)2) and sodium hydroxide aqueous solution (NaOH) were added into alcohol, and then ethylenediamine (EDTA) was added. After the solution stirred, put into a sonication bath at room temperature for 60 minutes. The solution was dried onder ambient conditions, then washed with water and alcohol, and dried in the air. The morphology of the ZnO was bundle of needle shape. The OBC (olefin block copolymer) was mixed with DCP (dicumyl peroxide), PCL (polycaprolactone), and silicone rubber to form OBC/PCL/silicone blends at 135 oC. The system of OBC/PCL/silicone was fixed at 60/40/20, and the ratio of the reagent A and reagent B of silicone was chosen as 20：1, as the degree of crosslinking and gel content were the most uniform and reproducible. FT-IR curves proved that after silicone added as useful. From the result of SEM (Scanning electron microscope), the etched OBC/PCL/silicone revealed the OBC/PCL domains. The result of DSC (Differential scanning calorimetry) indicated that when the degree of crosslinking increased, the degree of crystallization decreased. The results of DMA (Dynamic mechanical analysis) showed that the Tg of OBC/PCL/silicone 60/40/20 and OBC/PCL 60/40 was -59.2 oC and -49.8 oC, respectively, indicating an increased low temperature flexibility for silicone-filled system. The results of the recovery fixity (Rf) and recovery ratio (Rr) showed limited difference between OBC/PCL 60/40 and OBC/PCL/silicone 60/40/20. The results of TGA (Thermogravimetric analyzer) analysis indicated a significant increase in the thermal stability for silicone-filled system.
50
Lian, Shiang-Lin, and 連翔琳. "Supramolecular block copolymers: PCBM composite for resistor-type memory device application." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/24924311650508728230.
Анотація:
碩士國立臺灣大學
化學工程學研究所
99
Recently years, polymeric materials use to the memory device applications as an emerging area. The donor-acceptor type polymers have attracted a significant interest for memory device applications due to their tunable electronic properties through molecular design. However, the effects of the different polymer structure on the pure polymer memory characteristics and the application of functional block copolymer composites being used to disperse and control fullerene domain size through specified physical interaction on the nanomaterials composite memory characteristics have not yet been explored. In this thesis, we explore fluorene-based conjugated rod-coil block copolymer and thiophene-containing side-chain polymers with the different block ratio effect of pure copolymer and nanocomposites on resistive type memory device application. In the first part of this thesis (chapter 2), the optoelectronic, morphology and the memory device properties of diblock (with two different ratio 10/37, 10/68) and triblock (with the ratio41/40/41) poly[2,7-(9,9-dihexylfluorene)](PF)-block-poly(2-vinylpyridine)(P2VP) copolymers are reported. The pure copolymer PF10-b-P2VP37, PF10-b-P2VP68 and P2VP41-b-PF40-b-P2VP41 device exhibit SRAM, SRAM, and DRAM characteristic, respectively. The three pure polymers device exhibit high ON/OFF ratio (107) and threshold voltage about -4V. The switching effect is based on the fluorene moieties transport ability with coexisting P2VP as the charge trap sites. The electric volatile is attributed to the back transferring of shallow trap depth. For the composite system, the varied PCBM content of PCBM: PF-b-P2VP composite device exhibit volatile memory behavior, WORM, or conductor behaviors. The optical absorption and photoluminescence indicated the charge transfer between copolymer and PCBM, which lead to memory characteristics. However, the non-volatile type memory characteristic is associated with the high electron affinity of PCBM. We also compare the memory behavior with different block length and the difference between diblock and triblock copolymer. In the case of PCBM: diblock copolymer composite, by loading less content of PCBM in PF10-b-P2VP68 matrix could achieve the memory performances which need loading more PCBM content for PF10-b-P2VP37. This results is due to the longer P2VP block length of PF10-b-P2VP68, it probably attract more amount PCBM approach copolymer, thus, the distance of isolated domain size in the electrical connected channel between two electrodes is decrease. The morphology and the photoluminescence quenching relativity of these two diblock composites also agree with this result. In addition, the triblock: PCBM composite devices have significant lower threshold voltage than diblock: PCBM composite. It is due to the P2VP41-b-PF40-b-P2VP41 have higher π-π interchain stacking and stack together favorably leading the charge transfer between P2VP41-b-PF40-b-P2VP41 and PCBM is probably easier than diblock composite. This study indicate that the device electrical characteristic could be tune by varied the loading PCBM content or the design of copolymer architecture. In the second part of this thesis (chapter 3), supramolecular composite thin films of thiophene-containing side-chain polymers PT-b-P2VP: [6,6]-Phenyl-C61-Butyric Acid Methyl Ester (PCBM) were prepare for memory device. The optical absorption and photoluminescence results indicate that the formation charge transfer between PT-b-P2VP and PCBM. The memory device exhibited the WORM type characteristics with threshold voltage -4 ~ -4.6 and ON/OFF ratio 103 ~105. The switching behavior can be explained by the charge injection dominated thermal emission for OFF state and the field induced charge transport in the ON state. This study provide the novel nanomaterials memory device application through the physical interaction between functional block copolymer and fullerene controlling domain size.