Добірка наукової літератури з теми "P-type GaAs"
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Статті в журналах з теми "P-type GaAs"
Fuyuki, Takuma, Shota Kashiyama, Kunishige Oe, and Masahiro Yoshimoto. "Interface States in p-Type GaAs/GaAs1-xBixHeterostructure." Japanese Journal of Applied Physics 51, no. 11S (November 1, 2012): 11PC02. http://dx.doi.org/10.7567/jjap.51.11pc02.
Повний текст джерелаStichtenoth, D., K. Wegener, C. Gutsche, I. Regolin, F. J. Tegude, W. Prost, M. Seibt, and C. Ronning. "P-type doping of GaAs nanowires." Applied Physics Letters 92, no. 16 (April 21, 2008): 163107. http://dx.doi.org/10.1063/1.2912129.
Повний текст джерелаXie, Zhijian, and S. A. Lyon. "Ballistic transport in p-type GaAs." Applied Physics Letters 75, no. 14 (October 4, 1999): 2085–87. http://dx.doi.org/10.1063/1.124924.
Повний текст джерелаNathan, M. I., W. P. Dumke, K. Wrenner, S. Tiwari, S. L. Wright, and K. A. Jenkins. "Electron mobility in p‐type GaAs." Applied Physics Letters 52, no. 8 (February 22, 1988): 654–56. http://dx.doi.org/10.1063/1.99395.
Повний текст джерелаMoutonnet, D. "Photochemical pattern on p-type GaAs." Materials Letters 6, no. 1-2 (November 1987): 34–36. http://dx.doi.org/10.1016/0167-577x(87)90097-8.
Повний текст джерелаDong, Boqun, Andrei Afanasev, Rolland Johnson, and Mona Zaghloul. "Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves." Sensors 20, no. 8 (April 24, 2020): 2419. http://dx.doi.org/10.3390/s20082419.
Повний текст джерелаBagraev, Nikolai T. "Metastable Surface Defects in p-Type GaAs." Materials Science Forum 143-147 (October 1993): 543–48. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.543.
Повний текст джерелаIto, Hiroshi, and Tadao Ishibashi. "Surface Recombination Velocity in p-Type GaAs." Japanese Journal of Applied Physics 33, Part 1, No.1A (January 15, 1994): 88–89. http://dx.doi.org/10.1143/jjap.33.88.
Повний текст джерелаLodha, Saurabh, and David B. Janes. "Metal/molecule/p-type GaAs heterostructure devices." Journal of Applied Physics 100, no. 2 (July 15, 2006): 024503. http://dx.doi.org/10.1063/1.2210569.
Повний текст джерелаKidalov, V. V. "Optical properties of p-type porous GaAs." Semiconductor physics, quantum electronics and optoelectronics 8, no. 4 (December 15, 2005): 118–20. http://dx.doi.org/10.15407/spqeo8.04.118.
Повний текст джерелаДисертації з теми "P-type GaAs"
Klochan, Oleh V. Physics Faculty of Science UNSW. "Ballistic transport in one-dimensional p-type GaAs devices." Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/35186.
Повний текст джерелаGrbić, Boris. "Hole transport and spin-orbit coupling in p-type GaAs nanostructures." kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29710.
Повний текст джерелаClarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices." Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.
Повний текст джерелаSaha, Uttam Kumar. "Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs." Ohio University / OhioLINK, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230.
Повний текст джерелаLiu, Gordon Gang. "Electrochemical behaviour of gallium arsenide." Thesis, University of British Columbia, 1991. http://hdl.handle.net/2429/30080.
Повний текст джерелаApplied Science, Faculty of
Materials Engineering, Department of
Graduate
Rahbi, Rania. "Etude de la diffusion de l'hydrogène et des interactions hydrogène accepteur dans gaas de type p." Paris 7, 1991. http://www.theses.fr/1991PA077075.
Повний текст джерелаJOURDAN, NICOLAS. "Etude des dopants de type p pour l'epitaxie par jets moleculaires de transistors bipolaires a heterostructure gaas/gaa1as." Paris 7, 1991. http://www.theses.fr/1991PA077047.
Повний текст джерелаBenarfa, Houria. "Proprietes de photoluminescence de gaas : contribution a l'etude de gaas heteroepitaxie sur (ca,sr)f2 par la technique des jets moleculaires." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0019.
Повний текст джерелаPant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.
Повний текст джерелаMadhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.
Повний текст джерелаЧастини книг з теми "P-type GaAs"
Heuring, W., E. Bangert, G. Landwehr, G. Weimann, and W. Schlapp. "p-Type GaAs-(GaAI)As Heterostructures in Tilted Magnetic Fields: Theory and Experiments." In High Magnetic Fields in Semiconductor Physics II, 190–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_30.
Повний текст джерелаLandwehr, G. "Transport Properties of p-Type GaAs-(GaAl)As Heterojunctions in High Magnetic Fields." In Springer Series in Solid-State Sciences, 295–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_44.
Повний текст джерелаPerraud, S., C. David, and Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces." In Solid State Phenomena, 835–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.835.
Повний текст джерелаOssau, W., T. L. Kuhn, E. Bangert, and G. Weimann. "The H-Band Luminescence of p-Type GaAs-(GaAl)As Heterostructures in High Magnetic Fields." In High Magnetic Fields in Semiconductor Physics II, 268–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_41.
Повний текст джерелаReményi, G., G. Landwehr, W. Heuring, G. Weimann, and W. Schlapp. "Fractional Quantum Hall Effect of p-Type GaAs-(GaAl)As Heterostructures in the Millikelvin Range." In Springer Series in Solid-State Sciences, 166–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_25.
Повний текст джерелаIwasa, Y., N. Miura, S. Takeyama, and T. Ando. "Hole Cyclotron Resonance in p-Type GaAs-AlGaAs Superlattices in High Magnetic Fields." In Springer Series in Solid-State Sciences, 274–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_40.
Повний текст джерелаLohner, A., M. Woerner, T. Elsaesser, and W. Kaiser. "Hot Hole Capture by Shallow Acceptors in p-Type GaAs Studied by Picosecond Infrared Spectroscopy." In Ultrafast Phenomena VIII, 416–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84910-7_131.
Повний текст джерелаOno, M., N. Nishioka, M. Morifuji, and C. Hamaguchi. "Temperature Dependence of Resonant Tunneling Characteristics in a p-type GaAs/AlAs Double-Barrier Structure." In Springer Proceedings in Physics, 835–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_396.
Повний текст джерелаSzmulowicz, Frank, Gail J. Brown, William C. Mitchel, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, and C. H. Lin. "Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices." In Intersubband Transitions in Quantum Wells: Physics and Devices, 76–83. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_11.
Повний текст джерелаMal, Indranil, Asish Hazra, D. P. Samajdar, and T. D. Das. "Investigation of Electronic and Optical Properties of GaSbBi/GaAs Type-II Quantum Wells Using 14-Band k · p Hamiltonian." In Springer Proceedings in Physics, 1013–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_155.
Повний текст джерелаТези доповідей конференцій з теми "P-type GaAs"
Barnes, Peter A., Joongseo Park, and John B. Crofton. "Nonalloyed contacts to p-type GaAs." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by R. Aaron Falk. SPIE, 1993. http://dx.doi.org/10.1117/12.146540.
Повний текст джерелаSzmulowicz, Frank, and Gail J. Brown. "Whither P-type GaAs/AlGaAs QWIP?" In Symposium on Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467659.
Повний текст джерелаCifuentes, N., H. Limborco, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira, M. I. N. da Silva, J. C. Gonzalez, Daniel B. Roa, Emilson R. Viana, and A. Abelenda. "Electronic transport in p-type doped GaAs nanowires." In 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2016. http://dx.doi.org/10.1109/sbmicro.2016.7731333.
Повний текст джерелаXu, Zhiwei, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella, and H. Alan Schwettman. "Second harmonic generation in p-type GaAs quantum wells." In OE/LASE '94, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1994. http://dx.doi.org/10.1117/12.175709.
Повний текст джерелаMajid, A. "Deep levels in Ruthenium doped p-type MOCVD GaAs." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994034.
Повний текст джерелаMissaoui, A., L. Beji, and A. Bouazizi. "Optical Study of Porous p-type GaAs by Spectroscopic Ellipsometry." In 2nd International Conference on Transparent Optical Networks "Mediterranean Winter" 2008. ICTON-MW'08. IEEE, 2008. http://dx.doi.org/10.1109/ictonmw.2008.4773114.
Повний текст джерелаBoland, Jessica L., A. Casadei, G. Tutuncouglu, F. Matteini, C. Davies, F. Gaveen, F. Amaduzzi, et al. "Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping." In 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2016. http://dx.doi.org/10.1109/irmmw-thz.2016.7758574.
Повний текст джерелаCho, Taehee, Hyungsuk Kim, Songcheol Hong, and Youngse Kwon. "Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pd-5-6.
Повний текст джерелаBOGDANOV, E. V., A. A. ILIEVSKY, N. YA. MININA, A. M. SAVIN, O. P. HANSEN, C. B. SORENSEN, and W. KRAAK. "NEGATIVE AND PERSISTENT POSITIVE PHOTOCONDUCTIVITY IN P-TYPE Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As." In Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0019.
Повний текст джерелаGrbić, B., R. Leturcq, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck. "Hole transport in p-type GaAs quantum dots and point contacts." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730121.
Повний текст джерелаЗвіти організацій з теми "P-type GaAs"
McCormick, Larry D. Scanning Tunneling Microscopy Etching of Micrometer Level Features on P-Type GaAs. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada209216.
Повний текст джерелаTracy, Lisa A., John L. Reno, and Terry W. Hargett. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1221866.
Повний текст джерелаChu, Jerome T., and Sheng S. Li. Investigation of Normal Incidence High Performance P-Type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, June 1997. http://dx.doi.org/10.21236/ada325634.
Повний текст джерелаDutra, Lauren M., James Nonnemaker, Nathaniel Taylor, Ashley Feld, Brian Bradfield, John Holloway, Edward (Chip) Hill, and Annice Kim. Visual Attention to Tobacco-Related Stimuli in a 3D Virtual Store. RTI Press, May 2020. http://dx.doi.org/10.3768/rtipress.2020.rr.0036.2005.
Повний текст джерелаAwschalom, M., and R. K. T. Haken. Dependence of charge collection distributions and dose on the gas type filling the ionization chamber for a p(66)Be(49) clinical neutron beam. Office of Scientific and Technical Information (OSTI), January 1985. http://dx.doi.org/10.2172/5345986.
Повний текст джерелаAwschalom, Miguel, and R. Ten Haken. Dependence of Charge Collection Distributions and Dose of the Gas Type Filling the Ionization Chamber for a p(66)-Be(49) Clinical Neutron Beam. Office of Scientific and Technical Information (OSTI), January 1985. http://dx.doi.org/10.2172/1156255.
Повний текст джерела