Увійти

Готові списки джерел за темами / Oscillators, Electric; Oscillators, Microwave / Статті в журналах

Статті в журналах з теми "Oscillators, Electric; Oscillators, Microwave"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Oscillators, Electric; Oscillators, Microwave.

Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Oscillators, Electric; Oscillators, Microwave".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Krasnov, Vladimir M. "A distributed active patch antenna model of a Josephson oscillator." Beilstein Journal of Nanotechnology 14 (January 26, 2023): 151–64. http://dx.doi.org/10.3762/bjnano.14.16.

Повний текст джерела

Анотація:

Optimization of Josephson oscillators requires a quantitative understanding of their microwave properties. A Josephson junction has a geometry similar to a microstrip patch antenna. However, it is biased by a dc current distributed over the whole area of the junction. The oscillating electric field is generated internally via the ac-Josephson effect. In this work, I present a distributed, active patch antenna model of a Josephson oscillator. It takes into account the internal Josephson electrodynamics and allows for the determination of the effective input resistance, which couples the Josephson current to cavity modes in the transmission line formed by the junction. The model provides full characterization of Josephson oscillators and explains the origin of the low radiative power efficiency. Finally, I discuss the design of an optimized Josephson patch oscillator capable of reaching high efficiency and radiation power for emission into free space.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Saleh, Khaldoun, Pierre-Henri Merrer, Amel Ali-Slimane, Olivier Llopis, and Gilles Cibiel. "Study of the noise processes in microwave oscillators based on passive optical resonators." International Journal of Microwave and Wireless Technologies 5, no. 3 (April 23, 2013): 371–80. http://dx.doi.org/10.1017/s1759078713000354.

Повний текст джерела

Анотація:

Two types of optoelectronic oscillators delivering high spectral purity microwave signals are presented in this paper. These oscillators use the Pound–Drever–Hall laser stabilization technique to lock the laser carrier onto two different types of passive optical resonators featuring high-quality factors: a fiber ring resonator (FRR) and a whispering gallery mode monocrystalline disk-shaped micro-resonator. The different noise processes occurring inside these oscillators are discussed. Particular attention is given to the conversion of the laser's amplitude and frequency noise into RF phase noise via the laser stabilization loop and the resonator, and via the photodetector nonlinearity as well. A modeling approach using CAD software is also proposed to qualitatively evaluate laser noise conversion through the optical resonator. Moreover, different contributions of nonlinear optical scattering noise are discussed, mainly in the case of the FRR-based oscillator. When controlling these nonlinear optical effects in the case of the FRR, low-phase noise operation of the oscillator has been achieved, with a −40 dBc/Hz noise level at 10 Hz offset frequency from a 10.2 GHz RF carrier.

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Javalagi, S., V. Reddy, K. Gullapalli, and D. Neikirk. "High efficiency microwave diode oscillators." Electronics Letters 28, no. 18 (1992): 1699. http://dx.doi.org/10.1049/el:19921080.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Sancho, S., F. Ramirez, and A. Suarez. "General stabilization techniques for microwave oscillators." IEEE Microwave and Wireless Components Letters 15, no. 12 (December 2005): 868–70. http://dx.doi.org/10.1109/lmwc.2005.859991.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

El Ftouh, Hanae, El Bakkali Moustapha, Amar Touhami Naima, and Zakriti Alia. "Ultra low phase noise and high output power monolithic microwave integrated circuit oscillator for 5G applications." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 3 (June 1, 2022): 2689. http://dx.doi.org/10.11591/ijece.v12i3.pp2689-2698.

Повний текст джерела

Анотація:

novel structure of low phase noise and high output power monolithic microwave integrated circuit (MMIC) oscillator is presented in order to use it in 5G applications. The oscillator is based on the ED02AH process which allows us to design a microwave oscillator keeping a minimum size which is impossible to have it using other technologies since microwave oscillators are sensitive components above 20 GHz. The oscillator is studied, designed, and optimized on a GaAs substrate from the OMMIC foundry using the advanced design system (ADS) simulator in order to obtain a miniaturized oscillator (1.1×1.3 mm<sup>2</sup>) generating two signals of different frequencies f<sub>o1</sub>=26 GHz and f<sub>o2</sub>=30 GHz. The objective is to design an oscillator with high output power and low phase noise while respecting its specifications. The optimization of the proposed microwave oscillator shows satisfying results. Indeed, at 26 GHz and 30 GHz, the output powers are respectively 13.33 dBm and 14.89 dBm. The oscillator produces a sinusoidal signal of 1.5 V and 1.75 V amplitude respectively at 26 GHz and 30 GHz. The oscillator phase noise at f<sub>o1</sub> and f<sub>o2</sub> resonance frequencies using the liquid crystal (LC) resonator shows respectively -109 dBc/Hz and -110 dBc/Hz at 10 MHz offset.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

da C. Brito, L., P. H. P. de Carvalho, and L. A. Bermúdez. "Multi-objective evolutionary optimisation of microwave oscillators." Electronics Letters 40, no. 11 (2004): 677. http://dx.doi.org/10.1049/el:20040423.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Noskov, V. Ya, and K. A. Ignatkov. "DYNAMIC AUTODYNE AND MODULATION CHARACTERISTICS OF MICROWAVE OSCILLATORS." Telecommunications and Radio Engineering 72, no. 10 (2013): 919–34. http://dx.doi.org/10.1615/telecomradeng.v72.i10.70.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

TIONG, K. K., S. P. KUO, and S. C. KUO. "Optimization of the design of cusptron microwave oscillators." International Journal of Electronics 65, no. 3 (September 1988): 397–408. http://dx.doi.org/10.1080/00207218808945240.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Giordano, V., P. Y. Bourgeois, Y. Gruson, N. Boubekeur, R. Boudot, E. Rubiola, N. Bazin, and Y. Kersalé. "New advances in ultra–stable microwave oscillators." European Physical Journal Applied Physics 32, no. 2 (October 26, 2005): 133–41. http://dx.doi.org/10.1051/epjap:2005078.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Sancho, Sergio, Almudena Suarez, Franco Ramirez, and Mabel Ponton. "Analysis of the Transient Dynamics of Microwave Oscillators." IEEE Transactions on Microwave Theory and Techniques 67, no. 9 (September 2019): 3562–74. http://dx.doi.org/10.1109/tmtt.2019.2931009.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Siweris, H. J., and B. Schiek. "Analysis of Noise Upconversion in Microwave FET Oscillators." IEEE Transactions on Microwave Theory and Techniques 33, no. 3 (March 1985): 233–42. http://dx.doi.org/10.1109/tmtt.1985.1132986.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Noskov, V. Ya, K. A. Ignatkov, and K. D. Shaidurov. "Autodyne Effect in Microwave Oscillators with Injection Locking." Journal of Communications Technology and Electronics 65, no. 6 (June 2020): 651–58. http://dx.doi.org/10.1134/s1064226920050113.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Humood, Khalid A., Omar A. Imran, and Adnan M. Taha. "Design and simulation of high frequency colpitts oscillator based on BJT amplifier." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 1 (February 1, 2020): 160. http://dx.doi.org/10.11591/ijece.v10i1.pp160-170.

Повний текст джерела

Анотація:

Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with <strong>LC</strong> tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Magri, Vanessa P. R., Odylio D. Aguiar, Claudia B. M. P. Leme, Marbey M. Mosso, S. R. Furtado, Juliana B. Carvalho, and Jorge A. M. Souza. "Single loop phase noise measurement of microwave oscillators." Microwave and Optical Technology Letters 56, no. 10 (July 22, 2014): 2304–10. http://dx.doi.org/10.1002/mop.28577.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Chizh, A. L., and K. B. Mikitchuk. "Noise conversion in delay-line optoelectronic microwave oscillators." Quantum Electronics 51, no. 3 (March 1, 2021): 260–64. http://dx.doi.org/10.1070/qel17454.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Manko, A. A. "Measurement of the Frequency Switching Time of Microwave Oscillators." Telecommunications and Radio Engineering 60, no. 7-9 (2003): 150–54. http://dx.doi.org/10.1615/telecomradeng.v60.i789.190.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Boudot, R., N. Bazin, S. Grop, Y. Kersalé, and V. Giordano. "Simple architecture low phase noise microwave cryogenic sapphire oscillators." Electronics Letters 43, no. 3 (2007): 168. http://dx.doi.org/10.1049/el:20073219.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

MEDIAVILLA, A., A. TAZÓN, and J. L. GARCIA. "An improved transient characterization of three terminal microwave oscillators." International Journal of Electronics 63, no. 4 (October 1987): 533–40. http://dx.doi.org/10.1080/00207218708547340.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Michael, M., and D. K. Paul. "Microwave oscillators using ring resonators operating at higher modes." Electronics Letters 34, no. 20 (1998): 1952. http://dx.doi.org/10.1049/el:19981345.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Es-saqy, Abdelhafid, Maryam Abata, Mahmoud Mehdi, Mohammed Fattah, Said Mazer, Moulhime El Bekkali, and Catherine Algani. "A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 2 (April 1, 2021): 1036. http://dx.doi.org/10.11591/ijece.v11i2.pp1036-1042.

Повний текст джерела

Анотація:

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Ivanov, E. N., and M. E. Tobar. "Low phase-noise microwave oscillators with interferometric signal processing." IEEE Transactions on Microwave Theory and Techniques 54, no. 8 (August 2006): 3284–94. http://dx.doi.org/10.1109/tmtt.2006.879172.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Banai, A., and F. Farzaneh. "Locked and unlocked behaviour of mutually coupled microwave oscillators." IEE Proceedings - Microwaves, Antennas and Propagation 147, no. 1 (2000): 13. http://dx.doi.org/10.1049/ip-map:20000032.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Ivanov, E. N., and M. E. Tobar. "Low phase-noise sapphire crystal microwave oscillators: current status." IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 56, no. 2 (February 2009): 263–69. http://dx.doi.org/10.1109/tuffc.2009.1035.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Yongnan Xuan and C. M. Snowden. "A Generalized Approach to the Design of Microwave Oscillators." IEEE Transactions on Microwave Theory and Techniques 35, no. 12 (December 1987): 1340–47. http://dx.doi.org/10.1109/tmtt.1987.1133858.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Fukumoto, Katsumi, and Masamitsu Nakajima. "Coupling coefficients and injection–locking characteristics of microwave oscillators." Electronics and Communications in Japan (Part I: Communications) 70, no. 12 (1987): 75–83. http://dx.doi.org/10.1002/ecja.4410701208.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Shrestha, Bhanu, and Nam Young Kim. "Spurline resonators design and its implementation to microwave oscillators." Microwave and Optical Technology Letters 54, no. 1 (November 22, 2011): 171–76. http://dx.doi.org/10.1002/mop.26461.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Chembo, Yanne Kouomou, Laurent Larger, and Pere Colet. "Nonlinear Dynamics and Spectral Stability of Optoelectronic Microwave Oscillators." IEEE Journal of Quantum Electronics 44, no. 9 (September 2008): 858–66. http://dx.doi.org/10.1109/jqe.2008.925121.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Downing, B. J. "Varactor diode for tuning high-power solid-state microwave oscillators." Electronics Letters 21, no. 24 (1985): 1152. http://dx.doi.org/10.1049/el:19850815.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Everard, J. K. A., and C. D. Broomfield. "Transposed flicker noise suppression in microwave oscillators using feedforward amplifiers." Electronics Letters 36, no. 20 (2000): 1710. http://dx.doi.org/10.1049/el:20001201.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Jit, S., and B. B. Pal. "New optoelectronic integrated device for optically controlled microwave oscillators." IEE Proceedings - Optoelectronics 151, no. 3 (June 1, 2004): 177–82. http://dx.doi.org/10.1049/ip-opt:20040390.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

VAHDATI, Hamid, and Abdolali ABDIPOUR. "Nonlinear Stability Analysis of Microwave Oscillators Using Circuit Envelope Technique." IEICE Transactions on Electronics E92-C, no. 2 (2009): 275–77. http://dx.doi.org/10.1587/transele.e92.c.275.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Nick, M., A. Banai, and F. Farzaneh. "Phase-noise measurement using two inter-injection-locked microwave oscillators." IEEE Transactions on Microwave Theory and Techniques 54, no. 7 (July 2006): 2993–3000. http://dx.doi.org/10.1109/tmtt.2006.877423.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Kraemer, M., D. Dragomirescu, and R. Plana. "A Nonlinear Order-Reducing Behavioral Modeling Approach for Microwave Oscillators." IEEE Transactions on Microwave Theory and Techniques 57, no. 4 (April 2009): 991–1006. http://dx.doi.org/10.1109/tmtt.2009.2014483.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Dixon, J., E. Bradley, and Z. B. Popovic. "Nonlinear time-domain analysis of injection-locked microwave MESFET oscillators." IEEE Transactions on Microwave Theory and Techniques 45, no. 7 (July 1997): 1050–57. http://dx.doi.org/10.1109/22.598440.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Fukui, Kiyoshi, Shigeji Nogi, and Ming Wang. "Parallel-running of two ladder-type microwave multiple-device oscillators." Electronics and Communications in Japan (Part I: Communications) 69, no. 5 (1986): 107–16. http://dx.doi.org/10.1002/ecja.4410690514.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Alekseev, Egor, and Dimitris Pavlidis. "Large-signal microwave performance of GaN-based NDR diode oscillators." Solid-State Electronics 44, no. 6 (June 2000): 941–47. http://dx.doi.org/10.1016/s0038-1101(00)00011-3.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

AVRAMOV, IVAN D. "HIGH-PERFORMANCE SURFACE TRANSVERSE WAVE RESONATORS IN THE LOWER GHz FREQUENCY RANGE." International Journal of High Speed Electronics and Systems 10, no. 03 (September 2000): 735–92. http://dx.doi.org/10.1142/s0129156400000635.

Повний текст джерела

Анотація:

Since the first successful surface transverse wave (STW) resonator was demonstrated by Bagwell and Bray in 1987, STW resonant devices on temperature stable cut orientations of piezoelectric quartz have enjoyed a spectacular development. The tremendous interest in these devices is based on the fact that, compared to the widely used surface acoustic waves (SAW), the STW acoustic mode features some unique properties which makes it very attractive for low-noise microwave oscillator applications in the 1.0 to 3.0 GHz frequency range in which SAW based or dielectric resonator oscillators (DRO) fail to provide satisfactory performance. These STW properties include: high propagation velocity, material Q-values exceeding three times those of SAW and bulk acoustic waves (BAW) on quartz, low propagation loss, unprecedented 1/f device phase noise, extremely high power handling ability, as well as low aging and low vibration sensitivity. This paper reviews the fundamentals of STW propagation in resonant geometries on rotated Y-cuts of quartz and highlights important design aspects necessary for achieving desired STW resonator performance. Different designs of high- and low-Q, low-loss resonant devices and coupled resonator filters (CRF) in the 1.0 to 2.5 GHz range are characterized and discussed. Design details and data on state-of-the-art STW based fixed frequency and voltage controlled oscillators (VCO) with low phase noise and high power efficiency are presented. Finally, several applications of STW devices in GHz range data transmitters, receivers and sensors are described and discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Ongareau, Eric, Fadhel M. Ghannouchi, and Renato G. Bosisio. "Harmonic device line simulation of negative resistance microwave mesfet oscillators." Microwave and Optical Technology Letters 3, no. 9 (September 1990): 317–24. http://dx.doi.org/10.1002/mop.4650030907.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Ng, Hoi-Yee, Kim-Fung Tsang, and Chung-Ming Yuen. "Phase-noise measurement of free-running microwave voltage-controlled oscillators." Microwave and Optical Technology Letters 45, no. 3 (2005): 216–17. http://dx.doi.org/10.1002/mop.20773.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Gopal, R., B. Subash, V. K. Chandrasekar, and M. Lakshmanan. "Phase Locking of Spin Transfer Nano-Oscillators Using Common Microwave Sources." IEEE Transactions on Magnetics 55, no. 8 (August 2019): 1–9. http://dx.doi.org/10.1109/tmag.2019.2908954.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Hoeye, S. V., F. Ramirez, and A. Suarez. "Nonlinear optimization tools for the design of high-efficiency microwave oscillators." IEEE Microwave and Wireless Components Letters 14, no. 5 (May 2004): 189–91. http://dx.doi.org/10.1109/lmwc.2004.827869.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Llopis, Olivier, Jean-Marc Dienot, Jacques Verdier, Robert Plana, Michel Gayral, and Jacques Graffeuil. "Analytic investigation of frequency sensitivity in microwave oscillators: Application to the computation of phase noise in a dielectric resonator oscillator." Annales Des Télécommunications 51, no. 3-4 (March 1996): 121–29. http://dx.doi.org/10.1007/bf02995502.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Hu, Huimin, Guoliang Yu, Yiting Li, Yang Qiu, Haibin Zhu, Mingmin Zhu, and Haomiao Zhou. "Design of a Radial Vortex-Based Spin-Torque Nano-Oscillator in a Strain-Mediated Multiferroic Nanostructure for BFSK/BASK Applications." Micromachines 13, no. 7 (June 30, 2022): 1056. http://dx.doi.org/10.3390/mi13071056.

Повний текст джерела

Анотація:

Radial vortex-based spin torque nano-oscillators (RV-STNOs) have attracted extensive attention as potential nano microwave signal generators due to their advantages over other topological states, such as their higher oscillation, higher microwave power, and lower power consumption. However, the current driving the oscillation frequency of the STNOs must be limited in a small range of adjustment, which means less data transmission channels. In this paper, a new RV-STNO system is proposed with a multiferroic nanostructure, which consists of an ultrathin magnetic multilayer and a piezoelectric layer. Phase diagrams of oscillation frequency and amplitude with respect to piezostrain and current are obtained through micromagnetic simulation. The results show that the threshold current density of −4000-ppm compressive strain-assisted RV-STNOs is reduced from 2 × 109 A/m2 to 2 × 108 A/m2, showing one order of magnitude lower than that of conventional current-driven nano-oscillators. Meanwhile, the range of oscillation frequency adjustment is significantly enhanced, and there is an increased amplitude at the low oscillation point. Moreover, a promising digital binary frequency-shift key (BFSK) and binary amplitude-shift key (BASK) modulation technique is proposed under the combined action of current pulse and piezostrain pulse. They can transmit bit signals and show good modulation characteristics with a minimal transient state. These results provide a reference for developing the next generation of spintronic nano-oscillators with a wide frequency range and low power consumption, showing potential for future wireless communication applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Suarez, A., and F. Ramirez. "Analysis of stabilization circuits for phase-noise reduction in microwave oscillators." IEEE Transactions on Microwave Theory and Techniques 53, no. 9 (September 2005): 2743–51. http://dx.doi.org/10.1109/tmtt.2005.854182.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Yakimov, A. V., A. V. Klyuev, and M. A. Krevskii. "The Nature of Introduced Phase 1/f Noise in Microwave Oscillators." Journal of Communications Technology and Electronics 65, no. 1 (January 2020): 84–89. http://dx.doi.org/10.1134/s1064226920010076.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Hamidkhani, Mehdi, Rasool Sadeghi, and Mohamadreza Karimi. "Dual-Band High Q-Factor Complementary Split-Ring Resonators Using Substrate Integrated Waveguide Method and Their Applications." Journal of Electrical and Computer Engineering 2019 (September 9, 2019): 1–11. http://dx.doi.org/10.1155/2019/6287970.

Повний текст джерела

Анотація:

In modern microwave telecommunication systems, especially in low phase noise oscillators, there is a need for resonators with low insertion losses and high Q-factor. More specifically, it is of high interest to design resonators with high group delay. In this paper, three novel dual-band complementary split-ring resonators (CSRRs) featuring high group delay etched on the waveguide surface by using substrate integrated waveguides are investigated and proposed. They are designed for a frequency range of 4.5–5.5 GHz. Group delay rates for the first, second, and third resonators were approximated as much as 23 ns, 293 ns, and 90 ns, respectively. We also proposed a new practical method to develop a wide tuning range SIW CSRR cavity resonator with a small tuning voltage in the second resonator, which leads to about 19% and 1% of tuning frequency band in the first and second bands, respectively. Finally, some of their applications in the design of filter, diplexer, and low phase noise oscillator will be investigated.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Zobel, Justin W., Michele Giunta, Andrew J. Goers, Robert L. Schmid, Jason Reeves, Ronald Holzwarth, Eric J. Adles, and Michael L. Dennis. "Comparison of Optical Frequency Comb and Sapphire Loaded Cavity Microwave Oscillators." IEEE Photonics Technology Letters 31, no. 16 (August 15, 2019): 1323–26. http://dx.doi.org/10.1109/lpt.2019.2926190.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Hajian, H., A. Banai, and F. Farzaneh. "Statistical definition of locking bandwidth in an array of synchronised microwave oscillators." IET Microwaves, Antennas & Propagation 2, no. 1 (February 1, 2008): 74–81. http://dx.doi.org/10.1049/iet-map:20070056.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Lee, M. Q. "Kurokawa's noise spectra of microwave oscillators in terms of closed-loop gain." IET Microwaves, Antennas & Propagation 4, no. 6 (2010): 704. http://dx.doi.org/10.1049/iet-map.2009.0091.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Tseng, C. H., Y. W. Huang, and C. L. Chang. "Microwave low phase noise oscillators using T-shaped stepped-impedance-resonator filters." IET Microwaves, Antennas & Propagation 6, no. 12 (2012): 1374. http://dx.doi.org/10.1049/iet-map.2012.0090.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!