Статті в журналах з теми "Optoelectronic transistors"
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Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)." Materials 14, no. 13 (July 5, 2021): 3756. http://dx.doi.org/10.3390/ma14133756.
Повний текст джерелаSoref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.
Повний текст джерелаPan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication." MRS Advances 5, no. 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.
Повний текст джерелаHuseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (December 5, 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.
Повний текст джерелаZhang, Junyao, Yang Lu, Shilei Dai, Ruizhi Wang, Dandan Hao, Shiqi Zhang, Lize Xiong, and Jia Huang. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems." Research 2021 (February 22, 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.
Повний текст джерелаGao, Haikuo, Jinyu Liu, Zhengsheng Qin, Tianyu Wang, Can Gao, Huanli Dong, and Wenping Hu. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors." Nanoscale 12, no. 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.
Повний текст джерелаVyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (April 1, 2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.
Повний текст джерелаWu, Jieyun, Qing Li, Wen Wang, and Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups." Mini-Reviews in Organic Chemistry 16, no. 3 (January 25, 2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.
Повний текст джерелаUrey, Z., D. Wake, D. J. Newson, and I. D. Henning. "Comparison of InGaAs transistors as optoelectronic mixers." Electronics Letters 29, no. 20 (1993): 1796. http://dx.doi.org/10.1049/el:19931195.
Повний текст джерелаHong, Tu, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou, and Ya-Qiong Xu. "Polarized photocurrent response in black phosphorus field-effect transistors." Nanoscale 6, no. 15 (2014): 8978–83. http://dx.doi.org/10.1039/c4nr02164a.
Повний текст джерелаCheng, Jinbing, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan, and Paul K. Chu. "MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness." Energies 15, no. 17 (August 25, 2022): 6169. http://dx.doi.org/10.3390/en15176169.
Повний текст джерелаNie, Yiling, Pengshan Xie, Xu Chen, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Yunchao Xu, et al. "Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors." Journal of Semiconductors 43, no. 11 (November 1, 2022): 112201. http://dx.doi.org/10.1088/1674-4926/43/11/112201.
Повний текст джерелаThompson, Avery. "Applying ferroelectric materials in transistors for electronic and optoelectronic applications." Scilight 2023, no. 8 (February 24, 2023): 081106. http://dx.doi.org/10.1063/10.0017443.
Повний текст джерелаYuvaraja, Saravanan, Ali Nawaz, Qian Liu, Deepak Dubal, Sandeep G. Surya, Khaled N. Salama, and Prashant Sonar. "Organic field-effect transistor-based flexible sensors." Chemical Society Reviews 49, no. 11 (2020): 3423–60. http://dx.doi.org/10.1039/c9cs00811j.
Повний текст джерелаDai, Z. R., Sangbeom Kang, W. Alan Doolittle, Z. L. Wang, and April S. Brown. "Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy." Microscopy and Microanalysis 6, S2 (August 2000): 1106–7. http://dx.doi.org/10.1017/s1431927600038022.
Повний текст джерелаJiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, and Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics." Applied Physics Reviews 10, no. 1 (March 2023): 011310. http://dx.doi.org/10.1063/5.0090120.
Повний текст джерелаChen, Yusheng, Yifan Yao, Nicholas Turetta, and Paolo Samorì. "Vertical organic transistors with short channels for multifunctional optoelectronic devices." Journal of Materials Chemistry C 10, no. 7 (2022): 2494–506. http://dx.doi.org/10.1039/d1tc05055a.
Повний текст джерелаLEE, YOUNGBIN, and JONG-HYUN AHN. "GRAPHENE-BASED TRANSPARENT CONDUCTIVE FILMS." Nano 08, no. 03 (May 30, 2013): 1330001. http://dx.doi.org/10.1142/s1793292013300016.
Повний текст джерелаWang, Gongming, Dehui Li, Hung-Chieh Cheng, Yongjia Li, Chih-Yen Chen, Anxiang Yin, Zipeng Zhao, et al. "Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics." Science Advances 1, no. 9 (October 2015): e1500613. http://dx.doi.org/10.1126/sciadv.1500613.
Повний текст джерелаXie, Ling-Hai, Su-Hui Yang, Jin-Yi Lin, Ming-Dong Yi, and Wei Huang. "Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 2000 (October 13, 2013): 20120337. http://dx.doi.org/10.1098/rsta.2012.0337.
Повний текст джерелаWang, Lin, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen, and Kah-Wee Ang. "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics." Nanoscale 10, no. 29 (2018): 14359–67. http://dx.doi.org/10.1039/c8nr03207f.
Повний текст джерелаDong, Mi-Mi, Guang-Ping Zhang, Zong-Liang Li, Ming-Lang Wang, Chuan-Kui Wang, and Xiao-Xiao Fu. "Anisotropic interfacial properties of monolayer C2N field effect transistors." Physical Chemistry Chemical Physics 22, no. 48 (2020): 28074–85. http://dx.doi.org/10.1039/d0cp04450d.
Повний текст джерелаMoram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.
Повний текст джерелаZhou, Wenhan, Shengli Zhang, Shiying Guo, Hengze Qu, Bo Cai, Xiang Chen, and Haibo Zeng. "High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study." Nanoscale 12, no. 36 (2020): 18931–37. http://dx.doi.org/10.1039/d0nr04129g.
Повний текст джерелаQian, Fangsheng, Xiaobo Bu, Junjie Wang, Ziyu Lv, Su-Ting Han, and Ye Zhou. "Evolutionary 2D organic crystals for optoelectronic transistors and neuromorphic computing." Neuromorphic Computing and Engineering 2, no. 1 (February 7, 2022): 012001. http://dx.doi.org/10.1088/2634-4386/ac4a84.
Повний текст джерелаLee, Seunghyun, Jin-Seo Noh, Jeongmin Kim, MinGin Kim, So Young Jang, Jeunghee Park, and Wooyoung Lee. "The Optoelectronic Properties of PbS Nanowire Field-Effect Transistors." IEEE Transactions on Nanotechnology 12, no. 6 (November 2013): 1135–38. http://dx.doi.org/10.1109/tnano.2013.2280911.
Повний текст джерелаYu, Hyeonggeun, Zhipeng Dong, Jing Guo, Doyoung Kim, and Franky So. "Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications." ACS Applied Materials & Interfaces 8, no. 16 (April 15, 2016): 10430–35. http://dx.doi.org/10.1021/acsami.6b00182.
Повний текст джерелаPan, James N. "Optoelectronic CMOS Transistors: Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs." MRS Advances 4, no. 48 (2019): 2585–91. http://dx.doi.org/10.1557/adv.2019.211.
Повний текст джерелаUrbanos, Fernando J., A. Black, Ramón Bernardo-Gavito, A. L. Vázquez de Parga, Rodolfo Miranda, and D. Granados. "Electrical and geometrical tuning of MoS2 field effect transistors via direct nanopatterning." Nanoscale 11, no. 23 (2019): 11152–58. http://dx.doi.org/10.1039/c9nr02464f.
Повний текст джерелаZhu, Zhongcheng, Imran Murtaza, Hong Meng, and Wei Huang. "Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions." RSC Advances 7, no. 28 (2017): 17387–97. http://dx.doi.org/10.1039/c6ra27674a.
Повний текст джерелаSun, Yilin, Yingtao Ding, Dan Xie, Jianlong Xu, Mengxing Sun, Pengfei Yang, and Yanfeng Zhang. "Optogenetics‐Inspired Neuromorphic Optoelectronic Synaptic Transistors with Optically Modulated Plasticity." Advanced Optical Materials 9, no. 12 (March 27, 2021): 2002232. http://dx.doi.org/10.1002/adom.202002232.
Повний текст джерелаLee, Changmin, and Jaewon Jang. "Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors." JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY 29, no. 5 (September 30, 2020): 328–31. http://dx.doi.org/10.46670/jsst.2020.29.5.328.
Повний текст джерелаYang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, and Lou Zhi-Dong. "Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors." Acta Physica Sinica 58, no. 5 (2009): 3427. http://dx.doi.org/10.7498/aps.58.3427.
Повний текст джерелаHong, Jintao, Mengchen Wang, Jie Jiang, Peng Zheng, Hui Zheng, Liang Zheng, Dexuan Huo, Zhangting Wu, Zhenhua Ni, and Yang Zhang. "Optoelectronic performance of multilayer WSe2 transistors enhanced by defect engineering." Applied Physics Express 13, no. 6 (May 13, 2020): 061004. http://dx.doi.org/10.35848/1882-0786/ab8f13.
Повний текст джерелаYang, Shengxue, Sefaattin Tongay, Yan Li, Qu Yue, Jian-Bai Xia, Shun-Shen Li, Jingbo Li, and Su-Huai Wei. "Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors." Nanoscale 6, no. 13 (2014): 7226. http://dx.doi.org/10.1039/c4nr01741b.
Повний текст джерелаBrückner, V., and F. Kerstan. "Fast Response Time Measurements in Transistors Using Picosecond Optoelectronic Switches." physica status solidi (a) 91, no. 2 (October 16, 1985): K179—K183. http://dx.doi.org/10.1002/pssa.2210910266.
Повний текст джерелаHuo, Nengjie, Jun Kang, Zhongming Wei, Shu-Shen Li, Jingbo Li, and Su-Huai Wei. "Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors." Advanced Functional Materials 24, no. 44 (September 5, 2014): 7025–31. http://dx.doi.org/10.1002/adfm.201401504.
Повний текст джерелаDuan, Hongxiao, Kashif Javaid, Lingyan Liang, Lu Huang, Jiahuan Yu, Hongliang Zhang, Junhua Gao, Fei Zhuge, Ting-Chang Chang, and Hongtao Cao. "Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors." physica status solidi (RRL) – Rapid Research Letters 14, no. 4 (April 2020): 1900630. http://dx.doi.org/10.1002/pssr.201900630.
Повний текст джерелаFaella, Enver, Kimberly Intonti, Loredana Viscardi, Filippo Giubileo, Arun Kumar, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, and Antonio Di Bartolomeo. "Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light." Nanomaterials 12, no. 11 (May 31, 2022): 1886. http://dx.doi.org/10.3390/nano12111886.
Повний текст джерелаZhu, Chen, Wen Huang, Wei Li, Xuegong Yu, and Xing’ao Li. "Light-Emitting Artificial Synapses for Neuromorphic Computing." Research 2022 (September 24, 2022): 1–6. http://dx.doi.org/10.34133/2022/9786023.
Повний текст джерелаOh, Hongseok. "Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices." Ceramist 25, no. 4 (December 31, 2022): 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.
Повний текст джерелаMALIK, A., and M. ACEVES. "IMPROVED TWO-TERMINAL SILICON FUNCTIONAL OPTICAL SENSOR." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 722–25. http://dx.doi.org/10.1142/s0217984901002385.
Повний текст джерелаSingh, Arun Kumar, Shaista Andleeb, Jai Singh, and Jonghwa Eom. "Tailoring the electrical properties of multilayer MoS2 transistors using ultraviolet light irradiation." RSC Advances 5, no. 94 (2015): 77014–18. http://dx.doi.org/10.1039/c5ra14509k.
Повний текст джерелаJang, Jiung, Yeonsu Kang, Danyoung Cha, Junyoung Bae, and Sungsik Lee. "Thin-Film Optical Devices Based on Transparent Conducting Oxides: Physical Mechanisms and Applications." Crystals 9, no. 4 (April 3, 2019): 192. http://dx.doi.org/10.3390/cryst9040192.
Повний текст джерелаComí, Marc, Dhananjaya Patra, Rui Yang, Zhihui Chen, Alexandra Harbuzaru, Yiming Wubulikasimu, Sarbajit Banerjee, Rocío Ponce Ortiz, Yao Liu, and Mohammed Al-Hashimi. "Alkoxy functionalized benzothiadiazole based donor–acceptor conjugated copolymers for organic field-effect transistors." Journal of Materials Chemistry C 9, no. 15 (2021): 5113–23. http://dx.doi.org/10.1039/d1tc00079a.
Повний текст джерелаLiu, Hao, and Junhong Yang. "Research on Photoelectric Detection Performance Based on Pb Se Quantum Dots." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012047. http://dx.doi.org/10.1088/1742-6596/2290/1/012047.
Повний текст джерелаPeimyoo, N., M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou, et al. "Laser-writable high-k dielectric for van der Waals nanoelectronics." Science Advances 5, no. 1 (January 2019): eaau0906. http://dx.doi.org/10.1126/sciadv.aau0906.
Повний текст джерелаGou, He, Guorui Wang, Yanhong Tong, Qingxin Tang, and Yichun Liu. "Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors." Organic Electronics 30 (March 2016): 158–64. http://dx.doi.org/10.1016/j.orgel.2015.12.019.
Повний текст джерелаWang, Q. H., and J. G. Swanson. "Optoelectronic modulation spectroscopy applied to the characterization of field effect transistors." Journal of Applied Physics 74, no. 11 (December 1993): 7011–13. http://dx.doi.org/10.1063/1.355059.
Повний текст джерелаYip, Sen Po, Wei Wang, and Johnny C. Ho. "(Invited, Digital Presentation) Ternary III-Sb Nanowires: Synthesis and Their Electronic and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.
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