Увійти

Готові списки джерел за темами / OPTOELECTRONIC DEVICE APPLICATIONS / Статті в журналах

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: OPTOELECTRONIC DEVICE APPLICATIONS.

Статті в журналах з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

Автор: Grafiati

Опубліковано: 11 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "OPTOELECTRONIC DEVICE APPLICATIONS".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, and Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (January 30, 2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

Повний текст джерела

Анотація:

Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Gao, Q., H. J. Joyce, S. Paiman, J. H. Kang, H. H. Tan, Y. Kim, L. M. Smith, et al. "Nanowires for optoelectronic device applications." physica status solidi (c) 6, no. 12 (December 2009): 2678–82. http://dx.doi.org/10.1002/pssc.200982528.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Heutz, Sandrine, Paul Sullivan, Brett M. Sanderson, Stephan M. Schultes, and Tim S. Jones. "Molecular Thin Films for Optoelectronic Applications." Solid State Phenomena 121-123 (March 2007): 373–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.373.

Повний текст джерела

Анотація:

Organic molecular beam deposition (OMBD) is used for co-evaporation of copper phthalocyanine (CuPc) and C60 to form mixed films. Although pure single layers are crystalline, mixing leads to amorphous films in most cases, although phase segregation occurs for high concentrations of C60. An underlying CuPc single layer suppresses the segregation and leads to a homogeneous CuPc/C60 mixed film for all layer compositions. These effects are exploited in photovoltaic (PV) devices, where new architectures to improve device performance are investigated. Mixing the CuPc and C60 improves device performance, with the maximum efficiency (ηp = 1.17%) reached for devices containing 75% CuPc in the mixed layer, surrounded by pure layers at the electrode interfaces.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Li, Ziwei, Boyi Xu, Delang Liang, and Anlian Pan. "Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials." Research 2020 (August 29, 2020): 1–35. http://dx.doi.org/10.34133/2020/5464258.

Повний текст джерела

Анотація:

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Jeon, Jaeho, Yajie Yang, Haeju Choi, Jin-Hong Park, Byoung Hun Lee, and Sungjoo Lee. "MXenes for future nanophotonic device applications." Nanophotonics 9, no. 7 (May 13, 2020): 1831–53. http://dx.doi.org/10.1515/nanoph-2020-0060.

Повний текст джерела

Анотація:

AbstractTwo-dimensional (2D) layers of transition metal carbides, nitrides, or carbonitrides, collectively referred to as MXenes, are considered as the new family of 2D materials for the development of functional building blocks for optoelectronic and photonic device applications. Their advantages are based on their unique and tunable electronic and optical properties, which depend on the modulation of transition metal elements or surface functional groups. In this paper, we have presented a comprehensive review of MXenes to suggest an insightful perspective on future nanophotonic and optoelectronic device applications based on advanced synthesis processes and theoretically predicted or experimentally verified material properties. Recently developed optoelectronic and photonic devices, such as photodetectors, solar cells, fiber lasers, and light-emitting diodes are summarized in this review. Wide-spectrum photodetection with high photoresponsivity, high-yield solar cells, and effective saturable absorption were achieved by exploiting different MXenes. Further, the great potential of MXenes as an electrode material is predicted with a controllable work function in a wide range (1.6–8 eV) and high conductivity (~104 S/cm), and their potential as active channel material by generating a tunable energy bandgap is likewise shown. MXene can provide new functional building blocks for future generation nanophotonic device applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Xu, Wangqiong, Ying Lu, Weibin Lei, Fengrui Sui, Ruru Ma, Ruijuan Qi, and Rong Huang. "FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector." Micromachines 13, no. 1 (December 22, 2021): 11. http://dx.doi.org/10.3390/mi13010011.

Повний текст джерела

Анотація:

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Jamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.

Повний текст джерела

Анотація:

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Vazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin, and Kostantin Subkhankulov. "OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES." Electrical and data processing facilities and systems 18, no. 3-4 (2022): 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.

Повний текст джерела

Анотація:

Relevance Currently, optoelectronic devices based on diffraction gratings from standing elastic waves are widely used. This is due to the fact that such devices are small in size, allow realtime measurements and have high accuracy, speed and reliability. A review of foreign patents and scientific and technical literature shows that in Japan, the USA, Germany and other countries, intensive work has been carried out in recent years to create optoelectronic devices as part of information-measuring systems based on the use of diffraction gratings from standing elastic waves. Such work is also carried out in Russia. Today, optoelectronic devices are widely used in various fields of industry, medicine, ecology, etc. Aim of research It is necessary to investigate the prospects of research on the development of optoelectronic devices based on diffraction gratings from standing elastic waves. It is necessary to consider the physics of processes in the field of acousto-optic interactions. It is important to give the main characteristics and possible applications of optoelectronic devices based on diffraction gratings from standing elastic waves. Research objects Light and sound waves interacting with each other when they pass through the same medium, diffraction grating, optoelectronic device. Research methods Mathematical methods of calculation and analysis. Results The need for research in the field of optoelectronic devices based on diffraction gratings from standing elastic waves is formulated. It is shown that when passing through the same medium, light and sound waves interact with each other. Light is scattered on a sound wave, as on a diffraction grating. Recommendations for the design of optoelectronic devices based on diffraction gratings from standing elastic waves are proposed. Possible areas of application of optoelectronic devices based on diffraction gratings from standing elastic waves are considered. Keywords: acousto-optics, waves, modulator, diffraction grating, optoelectronic device

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Heydari Gharahcheshmeh, Meysam, and Karen K. Gleason. "Recent Progress in Conjugated Conducting and Semiconducting Polymers for Energy Devices." Energies 15, no. 10 (May 17, 2022): 3661. http://dx.doi.org/10.3390/en15103661.

Повний текст джерела

Анотація:

Advanced conductors (such as conducting and semiconducting polymers) are vital building blocks for modern technologies and biocompatible devices as faster computing and smaller device sizes are demanded. Conjugated conducting and semiconducting polymers (including poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), polythiophene (PTh), and polypyrrole (PPy)) provide the mechanical flexibility required for the next generation of energy and electronic devices. Electrical conductivity, ionic conductivity, and optoelectronic characteristics of advanced conductors are governed by their texture and constituent nanostructures. Thus, precise textural and nanostructural engineering of advanced conjugated conducting and semiconducting polymers provide an outstanding pathway to facilitate their adoption in various technological applications, including but not limited to energy storage and harvesting devices, flexible optoelectronics, bio-functional materials, and wearable electronics. This review article focuses on the basic interconnection among the nanostructure and the characteristics of conjugated conducting and semiconducting polymers. In addition, the application of conjugated conducting and semiconducting polymers in flexible energy devices and the resulting state-of-the-art device performance will be covered.

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Xu, Heng Rui, and Ping Liu. "Patterning Method for Nanowire Transparent Conductive Films." Materials Science Forum 1036 (June 29, 2021): 66–76. http://dx.doi.org/10.4028/www.scientific.net/msf.1036.66.

Повний текст джерела

Анотація:

With the development of flexible optoelectronic devices, transparent conductive films (TCFs) based on nanowires provide wide concern. The low preparation cost and high-efficiency assembly characteristics make them occupy a very important position in scientific research and industrial application. In practical applications, TCFs in optoelectronic devices often do not need to cover the whole device, but only need to be prepared in part areas. At this time, patterned TCFs need to be prepared. In this paper, four kinds of patterning methods of TCFs are introduced, and the advantages and disadvantages of each method are analyzed.

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Shi, Zhe, He Zhang, Karim Khan, Rui Cao, Ye Zhang, Chunyang Ma, Ayesha Khan Tareen, Yuanfei Jiang, Mingxing Jin, and Han Zhang. "Two-dimensional materials toward Terahertz optoelectronic device applications." Journal of Photochemistry and Photobiology C: Photochemistry Reviews 51 (June 2022): 100473. http://dx.doi.org/10.1016/j.jphotochemrev.2021.100473.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Babić, Dubravko I., John E. Bowers, Evelyn L. Hu, Long Yang, and Kent Carey. "Wafer Fusion for Surface-Normal Optoelectronic Device Applications." International Journal of High Speed Electronics and Systems 08, no. 02 (June 1997): 357–76. http://dx.doi.org/10.1142/s0129156497000135.

Повний текст джерела

Анотація:

This paper discusses the issues connected with the application of fusion bonding technology for surface-normal optoelectronic devices (III-V semiconductors). The InP/GaAs fusion bonding technology employed in the development of long-wavelength vertical-cavity lasers is described.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Joyce, Hannah J., Qiang Gao, H. Hoe Tan, C. Jagadish, Yong Kim, Jin Zou, Leigh M. Smith, et al. "III–V semiconductor nanowires for optoelectronic device applications." Progress in Quantum Electronics 35, no. 2-3 (March 2011): 23–75. http://dx.doi.org/10.1016/j.pquantelec.2011.03.002.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Deschler, M., M. Cüppers, A. Brauers, M. Heyen, and P. Balk. "Halogen VPE of AlGaAs for optoelectronic device applications." Journal of Crystal Growth 82, no. 4 (April 1987): 628–38. http://dx.doi.org/10.1016/s0022-0248(87)80007-6.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Xie, Chao, Yi Wang, Zhi-Xiang Zhang, Di Wang, and Lin-Bao Luo. "Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications." Nano Today 19 (April 2018): 41–83. http://dx.doi.org/10.1016/j.nantod.2018.02.009.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

16

André, Pascal, Peter Reece, Jens W. Tomm, Jean-Charles Ribierre, and Iwan Moreels. "Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications." physica status solidi (c) 11, no. 2 (February 2014): 193–94. http://dx.doi.org/10.1002/pssc.201470040.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Chakraborty, R., U. Das, D. Mohanta, and A. Choudhury. "Fabrication of ZnO nanorods for optoelectronic device applications." Indian Journal of Physics 83, no. 4 (April 2009): 553–58. http://dx.doi.org/10.1007/s12648-009-0019-x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

DUTTA, M., M. A. STROSCIO, and K. W. KIM. "RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 281–312. http://dx.doi.org/10.1142/s0129156498000130.

Повний текст джерела

Анотація:

As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Zhu, Yongdan, Meng Zhao, Yuan Zhang, Teng Zhang, and Hai Zhou. "Resistive switching and photovoltaic response characteristics for the BaTiO₃/Nb:SrTiO₃ heterostructure." Applied Physics Letters 120, no. 10 (March 7, 2022): 103504. http://dx.doi.org/10.1063/5.0083465.

Повний текст джерела

Анотація:

Recently, perovskite compounds with ABX3 structures have been attracting increasing attention because of their excellent properties and their potential for applications in fields such as optoelectronics and memory devices. In this Letter, we introduce a BaTiO3/Nb:SrTiO3 (BTO/NSTO) heterostructure that displays both resistive switching and photovoltaic response characteristics. As a dual-function device, our heterostructure device not only exhibits bipolar resistive switching behavior with a switching ratio of up to 103 without any forming process but also shows a tunable photovoltage effect with an open-circuit voltage ( Voc) of approximately 0.38 V. In addition, a high-resistance state and a low-resistance state of the device can be modulated by light illumination. This photo-modulation mechanism is revealed and shows that resistive switching can be attributed to migration of photogenerated carriers and charge trapping/detrapping caused by ferroelectric polarization reversal, which changes depletion layer characteristics at the BTO/NSTO interface. This work may help to provide an understanding of multifunctional characteristics of the BTO/NSTO heterostructure and will pave the way toward practical applications of this heterostructure in memory and optoelectronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Yarn, Kao Feng, Ming Ju Yang, and Wen Chung Chang. "GaAs/InGaAs Optoelectronic Switch for Triple-Logic Applications." Advanced Materials Research 459 (January 2012): 40–43. http://dx.doi.org/10.4028/www.scientific.net/amr.459.40.

Повний текст джерела

Анотація:

A new GaAs/InGaAs triangular barrier optoelectronic switch combined with tri-state characteristic is fabricated and demonstrated. Two GaAs/InGaAs barriers are employed to provide potential barriers for electron thermionic emission and hole confinement, respectively. Applying a sufficient DC voltage to this device, a double S-shaped negative differential resistance (NDR) phenomenon with nearly equal switching voltage difference is appeared at room temperature. This unique NDR property can be introduced to triple stable regions into the device circuit design. Based on a proper circuit design with suitable load line, the studied device has potential for triple-logic applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Doswell, Faniya C., Harold O. Lee, Jonathan J. Montes, and Sam-Shajing Sun. "The Effects of Annealing on Doped P3HT Thin Films for Potential Electronic Applications." MRS Advances 4, no. 31-32 (2019): 1787–92. http://dx.doi.org/10.1557/adv.2019.281.

Повний текст джерела

Анотація:

ABSTRACTPolymeric conjugated materials are convenient for developing future soft-material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent features. Similar to their inorganic counterparts, the addition of certain minority molecules, or dopants, to polymeric conjugated materials can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites. This allows for tunability of a variety of electronic and optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for a polymer matrix to self-assemble into a lower energy state, which leads to an increase in crystallinity and higher charge mobility. Previous research does not explicitly define how dopants can affect this process. This study involves an evaluation of the effects of annealing with doped P3HT films to demonstrate changes in optoelectronic and electronic properties.

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Zhong, Chunxiao, Yong Yan, Qian Peng, Zheng Zhang, Tao Wang, Xin Chen, Jiacheng Wang, Ying Wei, Tonglin Yang, and Linghai Xie. "Structure–Property Relationship of Macrocycles in Organic Photoelectric Devices: A Comprehensive Review." Nanomaterials 13, no. 11 (May 27, 2023): 1750. http://dx.doi.org/10.3390/nano13111750.

Повний текст джерела

Анотація:

Macrocycles have attracted significant attention from academia due to their various applications in organic field-effect transistors, organic light-emitting diodes, organic photovoltaics, and dye-sensitized solar cells. Despite the existence of reports on the application of macrocycles in organic optoelectronic devices, these reports are mainly limited to analyzing the structure–property relationship of a particular type of macrocyclic structure, and a systematic discussion on the structure–property is still lacking. Herein, we conducted a comprehensive analysis of a series of macrocycle structures to identify the key factors that affect the structure–property relationship between macrocycles and their optoelectronic device properties, including energy level structure, structural stability, film-forming property, skeleton rigidity, inherent pore structure, spatial hindrance, exclusion of perturbing end-effects, macrocycle size-dependent effects, and fullerene-like charge transport characteristics. These macrocycles exhibit thin-film and single-crystal hole mobility up to 10 and 26.8 cm2 V−1 s−1, respectively, as well as a unique macrocyclization-induced emission enhancement property. A clear understanding of the structure–property relationship between macrocycles and optoelectronic device performance, as well as the creation of novel macrocycle structures such as organic nanogridarenes, may pave the way for high-performance organic optoelectronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Montes, Jonathan J., Harold O. Lee, Faniya C. Doswell, and Sam-Shajing Sun. "Relationship Between Thermoelectric Properties and Morphology of Doped P3HT Thin Films for Potential Thermoelectric Applications." MRS Advances 4, no. 30 (2019): 1727–32. http://dx.doi.org/10.1557/adv.2019.324.

Повний текст джерела

Анотація:

ABSTRACTPolymeric conjugated materials are very promising for developing future soft material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent advantages such as flexibility, low-cost, ease of processability, and decreased harmful waste. Like their inorganic counterparts, the addition of certain dopants can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites allowing modification for a variety of electronic/optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for polymer matrices to self-assemble into a lower energy state which typically leads to increased crystallinity and higher charge mobility. In this work, we plan to evaluate the effects of annealing on doped P3HT films to understand its effects on optoelectronic and electronic properties focusing solely on crystallinity and charge carriers. Further understanding of the connection between annealing and doping in polymeric conjugated materials and thermoelectric properties will allow for an increase net output from multi-function materials and devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Haghizadeh, Anahita, and Haeyeon Yang. "Quantum wires by direct laser fabrication." MRS Advances 1, no. 28 (2016): 2065–69. http://dx.doi.org/10.1557/adv.2016.392.

Повний текст джерела

Анотація:

ABSTRACTFor optoelectronic device applications, quantum wires can be used as active media due to their unique physical properties. However, conventional approaches such as the self-assembly via the Stranski-Krastanov (S-K) growth technique have a limited success in their applications toward optoelectronic devices including photovoltaics and solar cells. A novel fabrication mechanism for quality quantum wires has been discovered. The laser fabricated nanowires semiconductor surfaces can have width and height as small as 30 and 5 nm, respectively while the density is one per 200 nm.

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Yue, Chenxi, Shuye Jiang, Hao Zhu, Lin Chen, Qingqing Sun, and David Zhang. "Device Applications of Synthetic Topological Insulator Nanostructures." Electronics 7, no. 10 (October 1, 2018): 225. http://dx.doi.org/10.3390/electronics7100225.

Повний текст джерела

Анотація:

This review briefly describes the development of synthetic topological insulator materials in the application of advanced electronic devices. As a new class of quantum matter, topological insulators with insulating bulk and conducting surface states have attracted attention in more and more research fields other than condensed matter physics due to their intrinsic physical properties, which provides an excellent basis for novel nanoelectronic, optoelectronic, and spintronic device applications. In comparison to the mechanically exfoliated samples, the newly emerging topological insulator nanostructures prepared with various synthetical approaches are more intriguing because the conduction contribution of the surface states can be significantly enhanced due to the larger surface-to-volume ratio, better manifesting the unique properties of the gapless surface states. So far, these synthetic topological insulator nanostructures have been implemented in different electrically accessible device platforms via electrical, magnetic and optical characterizations for material investigations and device applications, which will be introduced in this review.

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Ruiz-Carretero, Amparo, Nelson Ricardo Ávila Rovelo, Swann Militzer, and Philippe J. Mésini. "Hydrogen-bonded diketopyrrolopyrrole derivatives for energy-related applications." Journal of Materials Chemistry A 7, no. 41 (2019): 23451–75. http://dx.doi.org/10.1039/c9ta05236d.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Mehtab-Ur-Rehman and Wang Qun. "The organic-inorganic solar cells device structure with different transport layers and compounds: The Guidelines for researchers." World Journal of Advanced Research and Reviews 17, no. 1 (January 30, 2023): 846–55. http://dx.doi.org/10.30574/wjarr.2023.17.1.0101.

Повний текст джерела

Анотація:

In current investigations the optoelectronic properties of perovskite structure-based (PSB) compounds are collected. The power conversion efficiency (PCE) dependency on device design and different transport layers are given in detail. The number of PSB compounds is taken into account as emerging materials for optoelectronic and spintronics applications. The electronic properties suggest that these PSB compounds have many properties starts from insulator to conductors and semiconductors. Furthermore, the best compounds for optoelectronic applications are suggested, which are organic-inorganic PSB (AMPbX3 (A=CH3NH3, X=Cl, Br, I) compounds, best for optoelectronic applications especially for solar cells.

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Fathololoumi, Saeed, Hieu P. T. Nguyen, and Zetian Mi. "In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications." Nanoscience &Nanotechnology-Asia 1, no. 2 (December 1, 2011): 123–39. http://dx.doi.org/10.2174/2210681211101020123.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Fathololoumi, Saeed, Hieu P. T. Nguyen, and Zetian Mi. "In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications." Nanoscience & Nanotechnology-Asiae 1, no. 2 (December 1, 2011): 123–39. http://dx.doi.org/10.2174/2210682011101020123.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Kuchibhotla, Ravi, Joe C. Campbell, John C. Bean, Larry Peticolas, and Robert Hull. "Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications." Applied Physics Letters 62, no. 18 (May 3, 1993): 2215–17. http://dx.doi.org/10.1063/1.109420.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Koshida, Nobuyoshi. "Optoelectronic functions and device applications of quantum-sized nanosilicon." Review of Laser Engineering 34, Supplement (2006): 191–92. http://dx.doi.org/10.2184/lsj.34.191.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Qin, Zhengsheng, Can Gao, Wallace W. H. Wong, Moritz K. Riede, Tianyu Wang, Huanli Dong, Yonggang Zhen, and Wenping Hu. "Molecular doped organic semiconductor crystals for optoelectronic device applications." Journal of Materials Chemistry C 8, no. 43 (2020): 14996–5008. http://dx.doi.org/10.1039/d0tc02746d.

Повний текст джерела

Анотація:

In this review, we give a timely summary of the current progress of molecular doped organic semiconductor single crystals in terms of material selection, crystal growth, resulting properties and device applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

33

GAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH, et al. "III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.

Повний текст джерела

Анотація:

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si ) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB , can also be engineered by carefully controlling the V/III ratio and catalyst size.

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Sharma, Arvind. "Theoretical Investigation of BGaAs/GaAs for Optoelectronic Device Applications." Journal of Electronic Materials 49, no. 11 (August 14, 2020): 6263–69. http://dx.doi.org/10.1007/s11664-020-08389-z.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Singh, Jai, Monishka Rita Narayan, and David Ompong. "Diffusion of excitons in materials for optoelectronic device applications." Journal of Physics: Conference Series 619 (June 17, 2015): 012030. http://dx.doi.org/10.1088/1742-6596/619/1/012030.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Lee, Sang-Won, Min-Chang Jeong, Jae-Min Myoung, Gee-Sung Chae, and In-Jae Chung. "Magnetic alignment of ZnO nanowires for optoelectronic device applications." Applied Physics Letters 90, no. 13 (March 26, 2007): 133115. http://dx.doi.org/10.1063/1.2717575.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Raj, Rishabh, Veeramuthu Vignesh, Yong-Ho Ra, Rajkumar Nirmala, Cheul-Ro Lee, and Rangaswamy Navamathavan. "Growth of hierarchical GaN nanowires for optoelectronic device applications." Journal of Photonics for Energy 7, no. 1 (January 11, 2017): 016001. http://dx.doi.org/10.1117/1.jpe.7.016001.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Nishal, Vandna, Devender Singh, Raman Kumar Saini, Shri Bhagwan, Vijeta Tanwar, Sonika, Ritu Srivastava, and Pratap Singh Kadyan. "Optoelectronic characterization of zinc complexes for display device applications." Journal of Materials Science: Materials in Electronics 26, no. 9 (June 9, 2015): 6762–68. http://dx.doi.org/10.1007/s10854-015-3286-7.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Van Le, Quyet, Thang Phan Nguyen, Minjoon Park, Woonbae Sohn, Ho Won Jang, and Soo Young Kim. "Bottom-Up Synthesis of MeSxNanodots for Optoelectronic Device Applications." Advanced Optical Materials 4, no. 11 (July 29, 2016): 1796–804. http://dx.doi.org/10.1002/adom.201600333.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Shin, Gunchul. "Studies of Parylene/Silicone-Coated Soft Bio-Implantable Optoelectronic Device." Coatings 10, no. 4 (April 19, 2020): 404. http://dx.doi.org/10.3390/coatings10040404.

Повний текст джерела

Анотація:

Optogenetics is a new neuroscience technology, consisting of biological technology that activates a nerve by light and engineering technology that transmits light to the nerve. In order to transmit light to the target nerve, fiber optics or light-emitting devices have been inserted into the living body, while the motions or emotions of freely moving animals can be controlled using a wirelessly operated optoelectronic device. However, in order to keep optoelectronic devices small in size and operational for a long time in vivo, the need for a thin but robust protective layer has emerged. In this paper, we developed a protective layer, consisting of Parylene and silicone that can protect soft optoelectronic devices inside saline solution for a long time. A chemical vapor deposited Parylene C film between the polydimethylsiloxane layers showed promising optical, mechanical, and water-barrier properties. We expect that these protective layers can be used as an encapsulation film on bio-implantable devices, including wireless optogenetic applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Chen, Meng, Ziyu Lv, Fangsheng Qian, Yan Wang, Xuechao Xing, Kui Zhou, Junjie Wang, Shenming Huang, Su-Ting Han, and Ye Zhou. "Phototunable memories and reconfigurable logic applications based on natural melanin." Journal of Materials Chemistry C 9, no. 10 (2021): 3569–77. http://dx.doi.org/10.1039/d1tc00052g.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Kawanishi, Tetsuya. "Precise Optical Modulation and Its Application to Optoelectronic Device Measurement." Photonics 8, no. 5 (May 11, 2021): 160. http://dx.doi.org/10.3390/photonics8050160.

Повний текст джерела

Анотація:

Optoelectronic devices which play important roles in high-speed optical fiber networks can offer effective measurement methods for optoelectronic devices including optical modulators and photodetectors. Precise optical signal modulation is required for measurement applications. This paper focuses on high-speed and precise optical modulation devices and their application to device measurement. Optical modulators using electro-optic effect offers precise control of lightwaves for wideband signals. As examples, this paper describes frequency response measurement of photodetectors using high-precision amplitude modulation and wavelength domain measurement of optical filters using fast optical frequency sweep. Precise and high-speed modulation can be achieved by active trimming which compensates device structure imbalance due to fabrication error, where preciseness can be described by on-off extinction ratio. A Mach-Zehnder modulator with sub Mach-Zehnder interferometors can offer high extinction-ratio optical intensity modulation, which can be used for precise optoelectronic frequency response measurement. Precise modulation would be also useful for multi-level modulation schemes. To investigate impact of finite extinction ratio on optical modulation, duobinary modulation with small signal operation was demonstrated. For optical frequency domain analysis, single sideband modulation, which shifts optical frequency, can be used for generation of stimulus signals. Rapid measurement of optical filters was performed by using an optical sweeper consisting of an integrated Mach-Zehnder modulator for optical frequency control and an arbitrary waveform generator for generation of a source frequency chirp signal.

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Hossain, Mohammad Kamal. "ZnO Nanoparticles to Nanowires and Nanobundles." Nano Hybrids 3 (January 2013): 115–24. http://dx.doi.org/10.4028/www.scientific.net/nh.3.115.

Повний текст джерела

Анотація:

Nanosized Zinc oxide (ZnO) possesses unique electrical, optoelectronics and photochemical characteristics and thus it is a potential candidate for different applications in next generation of optoelectronic device. In this work, a novel sol-gel route for the synthesis of ZnO nanoparticles and its transformation into wires and bundles has been reported. The process is adopted from a simple and hand-on route that also shows the power of green chemistry in nanomaterials synthesis. ZnO nanoparticles (~30 nm in diameter) were synthesized from bottom-up approach followed by a further process to obtain nanometric wires and bundles under controlled conditions. The nanowires and bundles are speculated to initiate from anisotropic agglomeration of nanometric particles and agglomeration of these nanometric wires into bundles respectively. Control of these agglomeration processes is a key challenge for application of nanowires and bundles into useful devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Wang, Hao, Chaobo Dong, Yaliang Gui, Jiachi Ye, Salem Altaleb, Martin Thomaschewski, Behrouz Movahhed Nouri, Chandraman Patil, Hamed Dalir, and Volker J. Sorger. "Self-Powered Sb2Te3/MoS2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared." Nanomaterials 13, no. 13 (June 29, 2023): 1973. http://dx.doi.org/10.3390/nano13131973.

Повний текст джерела

Анотація:

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W−1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction’s band structure. This subsequently shifts the detector’s optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Liang, Feng-Xia, Yang Gao, Chao Xie, Xiao-Wei Tong, Zhong-Jun Li, and Lin-Bao Luo. "Recent advances in the fabrication of graphene–ZnO heterojunctions for optoelectronic device applications." Journal of Materials Chemistry C 6, no. 15 (2018): 3815–33. http://dx.doi.org/10.1039/c8tc00172c.

Повний текст джерела

Анотація:

Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest.

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Cao, Rui, Sidi Fan, Peng Yin, Chunyang Ma, Yonghong Zeng, Huide Wang, Karim Khan, et al. "Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends." Nanomaterials 12, no. 13 (July 1, 2022): 2260. http://dx.doi.org/10.3390/nano12132260.

Повний текст джерела

Анотація:

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Kershaw, Stephen V., Lihong Jing, Xiaodan Huang, Mingyuan Gao, and Andrey L. Rogach. "Materials aspects of semiconductor nanocrystals for optoelectronic applications." Materials Horizons 4, no. 2 (2017): 155–205. http://dx.doi.org/10.1039/c6mh00469e.

Повний текст джерела

Анотація:

Semiconductor nanocrystal quantum dots have already emerged as a flat panel display technology but, driven by continuing improvements to the materials and device structures, they are ever closer to reaching commercial viability as infrared photodetectors, efficient LEDs, solar cells and photocatalysts.

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Zhu, Hongliang, Li Fan, Kaili Wang, Hao Liu, Jiawei Zhang, and Shancheng Yan. "Progress in the Synthesis and Application of Tellurium Nanomaterials." Nanomaterials 13, no. 14 (July 12, 2023): 2057. http://dx.doi.org/10.3390/nano13142057.

Повний текст джерела

Анотація:

In recent decades, low-dimensional nanodevices have shown great potential to extend Moore’s Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure, tellurium nanomaterials show great application prospects in next-generation electronics and optoelectronic devices. For tellurium-based nanomaterials, scanning electron microscopy and transmission electron microscopy are the main characterization methods for their morphology. In this paper, the controllable synthesis methods of different tellurium nanostructures are reviewed, and the latest progress in the application of tellurium nanostructures is summarized. The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. Finally, the future challenges, opportunities, and development directions of tellurium nanomaterials are prospected.

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Son, Myungwoo, Jaewon Jang, Dong Chul Kim, Seunghyup Lee, Hyo-Soon Shin, Moon-Ho Ham, and Sang-Soo Chee. "Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts." Molecules 26, no. 15 (July 21, 2021): 4394. http://dx.doi.org/10.3390/molecules26154394.

Повний текст джерела

Анотація:

Two-dimensional (2D) molybdenum disulfide (MoS2) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS2 films has not yet been established, although contact property is directly associated to the device performance. Herein, we introduce graphene-interlayered Ti contacts (graphene/Ti) into large-area MoS2 device arrays using a wet-transfer method. We achieve MoS2 devices with superior electrical and photoelectrical properties using graphene/Ti contacts, with a field-effect mobility of 18.3 cm2/V∙s, on/off current ratio of 3 × 107, responsivity of 850 A/W, and detectivity of 2 × 1012 Jones. This outstanding performance is attributable to a reduction in the Schottky barrier height of the resultant devices, which arises from the decreased work function of graphene induced by the charge transfer from Ti. Our research offers a direction toward large-scale electronic and optoelectronic applications based on 2D materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Wang, Yen Po, Hsin Chieh Li, Yan Chi Huang, and Chih Shan Tan. "Synthesis and Applications of Halide Perovskite Nanocrystals in Optoelectronics." Inorganics 11, no. 1 (January 11, 2023): 39. http://dx.doi.org/10.3390/inorganics11010039.

Повний текст джерела

Анотація:

The perovskites used for optoelectronic devices have been more attractive during recent years due to their wide variety of advantages, such as their low cost, high photoluminescence quantum yield (PLQY), high carrier mobility, flexible bandgap tunability, and high light absorption ability. However, optoelectronic applications for traditional inorganic and organic materials present dilemmas due to their hardly tunable bandgap and instability. On the other hand, there are some more important benefits for perovskite nanocrystals, such as a size-dependent bandgap and the availability of anion exchange at room temperature. Therefore, perovskite NC-based applications are currently favored, offering a research direction beyond perovskite, and much research has focused on the stability issue and device performance. Thus, the synthesis and applications of perovskite NCs need to be thoroughly discussed for the future development of solar cells, light-emitting diodes, photodetectors, and laser research.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!