Статті в журналах з теми "Optoelectronic characteristics"
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Xie, De-Hua, Fei-Fei Wang, Hao Lü, Min-Yong Du, and Wen-Jie Xu. "Optoelectronic characteristics of CuO nanorods." Chinese Physics B 22, no. 5 (May 2013): 058103. http://dx.doi.org/10.1088/1674-1056/22/5/058103.
Повний текст джерелаSakata, H., Y. Nagao, and Y. Matsushima. "Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch (S-TOPS)." Journal of Optics A: Pure and Applied Optics 1, no. 4 (January 1, 1999): 435–37. http://dx.doi.org/10.1088/1464-4258/1/4/302.
Повний текст джерелаLi, Q. H., T. Gao, and T. H. Wang. "Optoelectronic characteristics of single CdS nanobelts." Applied Physics Letters 86, no. 19 (May 9, 2005): 193109. http://dx.doi.org/10.1063/1.1923186.
Повний текст джерелаWang, Feifei, Chong Wang, Jiannong Chen, and Yongjiang Yu. "Optoelectronic characteristics of single ZnAlO nanotetrapod." Materials Letters 66, no. 1 (January 2012): 270–72. http://dx.doi.org/10.1016/j.matlet.2011.08.070.
Повний текст джерелаWu, Jing, Yunshan Zhao, Minglei Sun, Minrui Zheng, Gang Zhang, Xinke Liu, and Dongzhi Chi. "Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering." Nanophotonics 9, no. 8 (February 21, 2020): 2467–74. http://dx.doi.org/10.1515/nanoph-2019-0542.
Повний текст джерелаGUO, DER-FENG, JUNG-HUI TSAI, TZU-YEN WENG, CHIH-HUNG YENG, PO-HSIEN LAI, SSU-YI FU, CHING-WEN HUNG, and WEN-CHAU LIU. "INVESTIGATION ON HETEROSTRUCTURAL OPTOELECTRONIC SWITCHES." Surface Review and Letters 15, no. 01n02 (February 2008): 139–44. http://dx.doi.org/10.1142/s0218625x08011123.
Повний текст джерелаLyashenko, V., V. Zozulia, O. Yula, V. Mazur, and V. Strelbitskyi. "GROUND of COMPOSITION AND TAKTIKO-TEKHNICHNIKH DESCRIPTIONS of PERSPECTIVE MOBILE OPTICAL-ELECTRONIC COMPLEX of TRAJECTORY MEASURINGS." Наукові праці Державного науково-дослідного інституту випробувань і сертифікації озброєння та військової техніки, no. 4 (August 19, 2020): 63–74. http://dx.doi.org/10.37701/dndivsovt.4.2020.08.
Повний текст джерелаKondrotas, Rokas, Remigijus Juškėnas, Arūnas Krotkus, Vidas Pakštas, Artūras Suchodolskis, Algirdas Mekys, Marius Franckevičius, et al. "Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3." Open Research Europe 2 (December 13, 2022): 138. http://dx.doi.org/10.12688/openreseurope.15168.1.
Повний текст джерелаKumar, Amit, Roberto Baccoli, Antonella Fais, Alberto Cincotti, Luca Pilia, and Gianluca Gatto. "Substitution Effects on the Optoelectronic Properties of Coumarin Derivatives." Applied Sciences 10, no. 1 (December 23, 2019): 144. http://dx.doi.org/10.3390/app10010144.
Повний текст джерелаKremenetskaya, Y. A., S. E. Markov, and Yu V. Melnyk. "Structural optimization of optoelectronic components in millimeter-wave radio-transmitting modules." Semiconductor Physics, Quantum Electronics and Optoelectronics 23, no. 04 (November 19, 2020): 424–30. http://dx.doi.org/10.15407/spqeo23.04.424.
Повний текст джерелаZieleźnicki, Jan, Adam Grzybowski, and Janusz Błaszczyk. "Comparison Of Selected Characteristics Of Brushless DC Motors For Optoelectronic Sensors Positioning." Research Works of Air Force Institute of Technology 36, no. 1 (August 1, 2015): 159–70. http://dx.doi.org/10.1515/afit-2015-0022.
Повний текст джерелаMarkina, O. M., and M. O. Tykhan. "Research of illuminating parameters halogen-filled and LED lamp for optoelectronic measuring system." Archives of Materials Science and Engineering 1, no. 94 (November 1, 2018): 18–26. http://dx.doi.org/10.5604/01.3001.0012.7804.
Повний текст джерелаWang, Lin, Wenyan Wang, Quan Wang, Xiaochun Chi, Zhihui Kang, Qiang Zhou, Lingyun Pan, Hanzhuang Zhang, and Yinghui Wang. "Study on photoelectric characteristics of monolayer WS2 films." RSC Advances 9, no. 64 (2019): 37195–200. http://dx.doi.org/10.1039/c9ra07924f.
Повний текст джерелаRhee, Seunghyun, Kunsik An, and Kyung-Tae Kang. "Recent Advances and Challenges in Halide Perovskite Crystals in Optoelectronic Devices from Solar Cells to Other Applications." Crystals 11, no. 1 (December 31, 2020): 39. http://dx.doi.org/10.3390/cryst11010039.
Повний текст джерелаKim, Kyung-Hwan, Ki-Hyun Keem, Jeong-Min Kang, Chang-Joon Yoon, Dong-Young Jeong, Byung-Don Min, Kyoung-Ah Cho, Hyun-Suk Kim, and Sang-Sig Kim. "Synthesis and Optoelectronic Characteristics of Single-crystalline Si Nanowires." Transactions on Electrical and Electronic Materials 6, no. 5 (October 1, 2005): 198–201. http://dx.doi.org/10.4313/teem.2005.6.5.198.
Повний текст джерелаLuo, Lin-bao, Feng-xia Liang, and Jian-sheng Jie. "Sn-catalyzed synthesis of SnO2nanowires and their optoelectronic characteristics." Nanotechnology 22, no. 48 (November 4, 2011): 485701. http://dx.doi.org/10.1088/0957-4484/22/48/485701.
Повний текст джерелаMathews, Nripan, Binni Varghese, Cheng Sun, Velmurugan Thavasi, Björn P. Andreasson, Chornghaur H. Sow, Seeram Ramakrishna, and Subodh G. Mhaisalkar. "Oxide nanowire networks and their electronic and optoelectronic characteristics." Nanoscale 2, no. 10 (2010): 1984. http://dx.doi.org/10.1039/c0nr00285b.
Повний текст джерелаHamaguchi, H., M. Makiuchi, and O. Wada. "High-speed response characteristics of GaAs optoelectronic integrated receivers." Electronics Letters 22, no. 9 (1986): 501. http://dx.doi.org/10.1049/el:19860340.
Повний текст джерелаEladl, Sh M. "Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices." Semiconductor physics, quantum electronics and optoelectronics 12, no. 3 (May 15, 2009): 260–63. http://dx.doi.org/10.15407/spqeo12.03.260.
Повний текст джерелаNdabakuranye, Jean Pierre, Hyeonju Lee, Idrissa Kayijuka, Sungkeun Baang, and Jaehoon Park. "Optoelectronic Characteristics of rr-P3HT:PC61BM-based Organic Solar Cells." Sensors and Materials 32, no. 7 (July 20, 2020): 2399. http://dx.doi.org/10.18494/sam.2020.2807.
Повний текст джерелаShen, Yuan-Chu, Chun-Yi Tung, Chiung-Yi Huang, Yu-Chang Lin, Yan-Gu Lin, and Ray-Hua Horng. "Study on Optoelectronic Characteristics of ZnGa2O4 Thin-Film Phototransistors." ACS Applied Electronic Materials 1, no. 5 (May 3, 2019): 783–88. http://dx.doi.org/10.1021/acsaelm.9b00128.
Повний текст джерелаYin, Xiaodong, Kanglei Liu, Yi Ren, Roger A. Lalancette, Yueh-Lin Loo, and Frieder Jäkle. "Pyridalthiadiazole acceptor-functionalized triarylboranes with multi-responsive optoelectronic characteristics." Chemical Science 8, no. 8 (2017): 5497–505. http://dx.doi.org/10.1039/c6sc03097a.
Повний текст джерелаBorders, Bryan, Morteza Adinehnia, Bhaskar Chilukuri, Michael Ruf, K. W. Hipps, and Ursula Mazur. "Tuning the optoelectronic characteristics of ionic organic crystalline assemblies." Journal of Materials Chemistry C 6, no. 15 (2018): 4041–56. http://dx.doi.org/10.1039/c8tc00416a.
Повний текст джерелаRostami, A., H. Rasooli Saghai, H. Baghban, N. Sadoogi, and Y. Seyfinejad. "Capping-Barrier Layer Effect on Quantum Dot Optoelectronic Characteristics." Chinese Physics Letters 27, no. 10 (October 2010): 104208. http://dx.doi.org/10.1088/0256-307x/27/10/104208.
Повний текст джерелаPorada, Z., and E. Schabowska-Osiowska. "Dynamic Characteristics of a Thin Film Optoelectronic Memory System." Active and Passive Electronic Components 19, no. 2 (1996): 111–17. http://dx.doi.org/10.1155/1996/68903.
Повний текст джерелаMatsui, Yu-ichi, and Yoshio Miyoshi. "Difference-of-Gaussian-Like Characteristics for Optoelectronic Visual Sensor." IEEE Sensors Journal 7, no. 10 (October 2007): 1447–52. http://dx.doi.org/10.1109/jsen.2007.905040.
Повний текст джерелаAl-Shawabkeh, Ali F. "Optoelectronic investigation and spectroscopic characteristics of polyamide-66 polymer." e-Polymers 22, no. 1 (January 1, 2022): 858–69. http://dx.doi.org/10.1515/epoly-2022-0078.
Повний текст джерелаLi, Yi Bing, Zhi Wei Zhang, and Jun Guo. "PLM Oriented Quality Information Model and Management System for Optoelectronic Product." Advanced Materials Research 889-890 (February 2014): 1467–70. http://dx.doi.org/10.4028/www.scientific.net/amr.889-890.1467.
Повний текст джерелаMatbabayev, M. "The Optoelectronic Sensor Relative Humidity." Bulletin of Science and Practice 6, no. 10 (October 15, 2020): 244–52. http://dx.doi.org/10.33619/2414-2948/59/24.
Повний текст джерелаUddin, Noor, Qing Yang, Guangqing Du, Feng Chen, Huijing Li, and Xun Hou. "Active tuning of hybrid plasmonics in graphene-covered metallic nanotrench-=SUP=-*-=/SUP=-." Письма в журнал технической физики 46, no. 11 (2020): 14. http://dx.doi.org/10.21883/pjtf.2020.11.49491.18121.
Повний текст джерелаKhasanov, Zimfir, Vasikh Yasoveev, Oleg Khasanov, and Alexandr Vishnevskiy. "Estimation of Dynamic Errors in Laser Optoelectronic Dimension Gauges for Geometric Measurement of Details." MATEC Web of Conferences 155 (2018): 01042. http://dx.doi.org/10.1051/matecconf/201815501042.
Повний текст джерелаOlimov, Lutfiddin Omanovich. "DETERMINATION OF EFFICIENT OPTICAL SOURCES OF AIR PROPAGATION FOR FISHERIES BIOPHYSICAL DEVICES." European International Journal of Multidisciplinary Research and Management Studies 02, no. 10 (October 1, 2022): 01–08. http://dx.doi.org/10.55640/eijmrms-02-10-01.
Повний текст джерелаLiu, Lei, WeiWei Jiang, and Bi He. "Analysis and Experimental Research on Dynamic Characteristics of Horizontal Shaft System of Photoelectric Equipment." Journal of Physics: Conference Series 2396, no. 1 (December 1, 2022): 012008. http://dx.doi.org/10.1088/1742-6596/2396/1/012008.
Повний текст джерелаBragina, Liudmyla, Dmitry Petrov, Nazar Kovalenko, and Sergiy Philonenko. "Study of the Performance Characteristics of Erbium-Containing Laser Glasses." Key Engineering Materials 788 (November 2018): 114–19. http://dx.doi.org/10.4028/www.scientific.net/kem.788.114.
Повний текст джерелаSimić, Biljana, Dejan Nikolić, Koviljka Stanković, Ljubinko Timotijević, and Srboljub Stanković. "Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/582819.
Повний текст джерелаKozłowski, Grzeegorz. "COMPETENCE OF LABORATORY FOR TESTING OPTOELECTRONIC SYSTEMS IN MILITARY INSTITUTE OF ARMAMENT TECHNOLOGY." PROBLEMY TECHNIKI UZBROJENIA 157, no. 2 (November 10, 2021): 37–58. http://dx.doi.org/10.5604/01.3001.0015.5046.
Повний текст джерелаSvishcho, Vitaliy S. "Methodology for Estimating the Probability of Obtaining Data About an Object Using Optoelectronic Systems of Unmanned Aerial Vehicles." Journal of Siberian Federal University. Engineering & Technologies 14, no. 7 (November 2021): 803–11. http://dx.doi.org/10.17516/1999-494x-0357.
Повний текст джерелаYang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, and Lou Zhi-Dong. "Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors." Acta Physica Sinica 58, no. 5 (2009): 3427. http://dx.doi.org/10.7498/aps.58.3427.
Повний текст джерелаKomarala, Eswaravara Prasadarao, Karthikeyan Mariyappan, Suyoun Park, and Sung Ha Park. "DNA foams constructed by freeze drying and their optoelectronic characteristics." Colloids and Surfaces B: Biointerfaces 217 (September 2022): 112648. http://dx.doi.org/10.1016/j.colsurfb.2022.112648.
Повний текст джерелаIlanchezhiyan, P., C. Siva, A. Madhan Kumar, Fu Xiao, G. Mohan Kumar, and T. W. Kang. "Optoelectronic characteristics of chemically processed ultra-thin InyZn1−yO nanostructures." CrystEngComm 18, no. 18 (2016): 3204–10. http://dx.doi.org/10.1039/c6ce00558f.
Повний текст джерелаHamaguchi, H., M. Makiuchi, T. Kumai, and O. Wada. "GaAs optoelectronic integrated receiver with high-output fast-response characteristics." IEEE Electron Device Letters 8, no. 1 (January 1987): 39–41. http://dx.doi.org/10.1109/edl.1987.26543.
Повний текст джерелаZheng, Lü, Chen Zhi-Ming, and Pu Hong-Bin. "SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics." Chinese Physics 14, no. 6 (May 3, 2005): 1255–58. http://dx.doi.org/10.1088/1009-1963/14/6/035.
Повний текст джерелаAl-Sagheer, Fakhreia, Ali Bumajdad, Metwally Madkour, and Basma Ghazal. "Optoelectronic Characteristics of ZnS Quantum Dots: Simulation and Experimental Investigations." Science of Advanced Materials 7, no. 11 (November 1, 2015): 2352–60. http://dx.doi.org/10.1166/sam.2015.2385.
Повний текст джерелаKamimura, H., C. J. Dalmaschio, S. C. Carrocine, A. D. Rodrigues, R. C. Gouveia, E. R. Leite, and A. J. Chiquito. "Optoelectronic characteristics of single InP nanowire grown from solid source." Materials Research Express 2, no. 4 (April 14, 2015): 045012. http://dx.doi.org/10.1088/2053-1591/2/4/045012.
Повний текст джерелаAzadeh, M., R. B. Darling, and W. R. Babbitt. "Characteristics of optoelectronic feedback for smart pixels with smart illumination." IEEE Journal of Selected Topics in Quantum Electronics 5, no. 2 (1999): 172–77. http://dx.doi.org/10.1109/2944.778277.
Повний текст джерелаSurabhi, R., A. Batra, K. Bhat, A. Chilvery, S. Uba, B. Bohara, and A. Alomari. "Growth and characteristics of perovskite CH3NH3PbBr3 crystal for optoelectronic applications." Ferroelectrics 533, no. 1 (September 10, 2018): 72–81. http://dx.doi.org/10.1080/00150193.2018.1470842.
Повний текст джерелаDostanko, A. P., and A. V. Tishkevich. "Correction of the calibrating characteristics of optoelectronic temperature measurement systems." Measurement Techniques 33, no. 9 (September 1990): 923–26. http://dx.doi.org/10.1007/bf00976570.
Повний текст джерелаZanatta, A. R., C. T. M. Ribeiro, and U. Jahn. "Optoelectronic and structural characteristics of Er-doped amorphous AlN films." Journal of Applied Physics 98, no. 9 (November 2005): 093514. http://dx.doi.org/10.1063/1.2127120.
Повний текст джерелаHuang, Yidong, Kaiyu Cui, Fang Liu, Xue Feng, and Wei Zhang. "Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures." Frontiers of Optoelectronics 9, no. 2 (March 29, 2016): 151–59. http://dx.doi.org/10.1007/s12200-016-0615-2.
Повний текст джерелаPorada, Z., and E. Schabowska-Osiowska. "Dynamic Characteristics of a Thin Film Optoelectronic Voltage-Current Convertor." Active and Passive Electronic Components 16, no. 1 (1993): 29–34. http://dx.doi.org/10.1155/1993/79097.
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